CN107546094A - Monitor the plasma processing apparatus and method of plasma process processing procedure - Google Patents
Monitor the plasma processing apparatus and method of plasma process processing procedure Download PDFInfo
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Abstract
The invention discloses a kind of plasma processing apparatus and method for monitoring manufacturing process, one monitoring device of plasm reaction cavity and monitoring Substrate treatment processing procedure including a processing substrate, the monitoring device includes an incident light source, launches pulse incident light for the substrate surface into the reaction chamber；One spectrometer, for gathering the optical signal in the reaction chamber；One data processing equipment, for receive the spectrometer collection to optical signal and cycle and the pulse incident light cycle identical modulated signal are provided, the modulated signal has positive and negative both direction, and the modulated signal is cancelled out each other after being superimposed with the product of the background light signal in each cycle；The pulse-echo optical signal and the product of the modulated signal are not zero；The terminal of the plasma process processing procedure is calculated using the pulse-echo optical signal of acquisition for the data processing equipment.
Description
Technical field
The present invention relates to plasma process processing technology field, more particularly to a kind of plasma processing processing procedure to be carried out
The technical field of monitoring.
Background technology
Plasma treatment technique is widely used in semiconductor fabrication process.Semiconductor chip is being deposited or carved
, it is necessary to close supervision be carried out to manufacturing process, to ensure that depositing operation or etching technics result are well controlled during erosion.
A kind of currently used etching technics control method is optical emission spectroscopy (OES).Atom or molecule quilt in plasma
Electron excitation is to the light that after excitation state, can launch specific wavelength during another energy state is returned to.Not homoatomic or
The wavelength for the light wave that person's molecule is excited is different, and the change of the light intensity of light wave reflects atom or molecule in plasma
Change in concentration.OES is will can to reflect plasma etching change in process, form closely related material with plasma chemistry
The characteristic spectral line (OES characteristic spectral lines) of plasma extract, by the change for detecting its characteristic spectral line signal intensity in real time
Change, to provide the information of the response situation in plasma etch process, the limitation of this method is that film can only be monitored
State after the completion of etching, only finished when a kind of destination layer being etched etches, plasma etching to next layer of destination layer
When, the characteristic spectral line of corresponding plasma just has significant change, therefore this method is only used for the terminal prison of etching technics
Survey.
With being continuously increased for the device integration density in integrated circuit and complexity, to the strict of semiconductor processes
Control is just particularly important.For the polysilicon gate etching technique of sub- profound and subtle rice, because the thickness of grid oxide layer has become
Must be very thin, how accurately to control plasma etch process is the technical challenge that people face.Partly lead at present
The industrial used High Density Plasma Etching System of body, such as inductively coupled plasma (ICP) source, capacitiveiy coupled plasma
Body (CCP) source, and electron spin resonance plasma (ECR) source etc..Its caused plasma has higher etching
Speed, if technology controlling and process is unreasonable, the overetch of appearance is easy to cause the damage of lower layer of material, in turn results in device
The failure of part.Therefore must be to the parameter of some in etching process, such as the chemical gas, etch period, etch rate of etching
And the parameter such as etching selection ratio is strictly controlled.In addition, the trickle change of etching machine state, such as gas stream in reaction cavity
Amount, temperature, the reflux state of gas or the difference between chip between batches, can all have influence on the control to etching parameters
System.The situation of change of various parameters in etching process must be thus monitored, to ensure the uniformity etched in etching process.And do
It is exactly etching process is monitored in real time and to design to realize to relate to end-point method (IEP).
Interferometric endpoint method (IEP) be an incident optical signal to surface of semiconductor chip, incident optical signal is through semiconductor chip
The information of substrate membrane thickness change is carried after transmitting, by being measured to the wavelength of optical signal after reflection, and according to survey
Amount result carries out analysis calculating, it can be deduced that actual etch rate, realizes the etching process of monitoring substrate membrane in real time.But
During to spectrum monitoring, specific wavelength that atom or molecule in plasma can be launched after electron excitation to excitation state
Optical signal exist always, and intensity is larger, and the light signal strength that even plasma is sent sometimes can exceed incident optical signal
Intensity, the reading to the incident optical signal after reflection is disturbed so that measurement incident optical signal becomes difficult.
The content of the invention
In order to solve the above-mentioned technical problem, the invention discloses it is a kind of monitor manufacturing process plasma processing apparatus,
The monitoring device of reaction chamber and monitoring Substrate treatment processing procedure including a processing substrate, the monitoring device include：
One incident light source, launch pulse incident light for the substrate surface into the reaction chamber；
One spectrometer, for gathering the optical signal in the reaction chamber, the optical signal exists including the pulse incident light
The background light signal that the pulse-echo optical signal and processing thereof plasma of substrate surface are sent；
One data processing equipment, for receive the spectrometer collection to optical signal and the cycle be provided enter with the pulse
Photoperiod identical modulated signal is penetrated, the modulated signal has positive and negative both direction, and the modulated signal in each cycle
Cancelled out each other after being superimposed with the product of the background light signal；
The pulse-echo optical signal and the product of the modulated signal are not zero；
The plasma process processing procedure is calculated using the pulse-echo optical signal of acquisition in the data processing equipment
Terminal.
Preferably, modulated signal direction in a cycle is positive signal integration area and direction is negative signal
Integral area is identical.
Preferably, the pulse-echo optical signal and the product of the modulated signal are more than 0.
Preferably, the modulated signal is sinusoidal signal or cosine signal.
Preferably, in each cycle, the pulse-echo optical signal and the sinusoidal signal or the crest phase of cosine signal
It is corresponding.
Preferably, in each cycle, the pulse-echo optical signal and the sinusoidal signal or the trough phase of cosine signal
It is corresponding.
Preferably, the modulated signal is low and high level pulse-period signal, and the high level is more than zero, the low level
Less than zero, the region area corresponding with low level of region area corresponding to high level is equal in magnitude in one cycle.
Preferably, the amplitude of the modulated signal is more than or equal to the light intensity numerical value of the pulse-echo optical signal.
Preferably, the incident light that the incident light source is sent is full spectrum.
Preferably, the incident light source is flash lamp.
Preferably, the spectrometer sends pulse triggering signal to the incident light source, to control the incident light source to send out
Penetrate the cycle of pulse incident light.
Further, the invention also discloses a kind of method for monitoring plasma-treating technology, methods described is in first-class
Carried out in gas ions processing unit, methods described comprises the following steps：
Place the substrates in the reaction chamber of the plasma processing apparatus, plasma process is carried out to the substrate
Processing；
Launch a pulse incident light to the substrate, the pulse incident light reflects in substrate surface；
The optical signal is simultaneously transported to a data processing by the optical signal that is sent described in a spectrometer collection in reaction chamber
Device, the optical signal include plasma reasons for its use light in the pulse-echo optical signal and reaction chamber of substrate surface reflection
Signal；
The data processing equipment provides one and the pulse incident light cycle identical modulated signal, and the modulation is believed
Number and spectrometer collection optical signal carry out multiplying；
The modulated signal be arranged to have positive negative direction and with the product of the background light signal within each cycle phase
Mutually offset；
The position of the modulated signal and the pulse-echo optical signal is set so that the product of the two is not zero；
Utilize the terminal meter for eliminating the pulse-echo optical signal information after background light signal and carrying out plasma-treating technology
Calculate.
Preferably, the data processing equipment adjusts the modulated signal and the position of the pulse-echo optical signal, makes
Obtain the product of the two and be more than zero.
Preferably, the modulated signal that the data processing equipment provides is sinusoidal signal or cosine signal.
Preferably, the data processing equipment controls the pulse incident optical signal and the sinusoidal modulation signal or cosine
The crest or trough of modulated signal are corresponding.
Preferably, the amplitude of the modulated signal is more than or equal to the intensity of the pulse-echo optical signal.
Preferably, the incident optical signal is full spectral signal.
Preferably, the modulated signal is low and high level pulse-period signal, and the high level is more than zero, the low level
Less than zero, the region area corresponding with low level of region area corresponding to high level is equal in magnitude in one cycle.
Preferably, the spectrometer sends a pulse triggering signal to the incident light source, controls the incident light source
Pulse period.
Preferably, the data processing equipment is a computer system.
The advantage of the invention is that：The background light signal and pulse-echo optical signal arrived to spectrometer collection applies a modulation
Signal, the cycle of the modulated signal and the cycle phase of the pulse-echo optical signal are same, and the modulated signal is in a week
Direction is that positive signal integration area with direction is that negative signal integration area is identical in phase.Because background light signal is relatively steady
It is fixed, change in a cycle it is almost nil, therefore when being overlapped to the product of background light signal and modulated signal, due to the back of the body
Scape optical signal is identical with the product size of modulated signal, and in the opposite direction, therefore, the numerical value after superposition is zero, so as to eliminate the back of the body
The interference of scape optical signal, data processing equipment 114 control the product of pulse-echo light and modulated signal to be not zero, due to a tune
Only there is the very of short duration time in signal period internal reflection optical signal processed, also will not be right even if being overlapped in a cycle
Reflected light signal impacts, particularly, when setting the amplitude of modulated signal to be more than the light intensity of reflected light signal, the modulation
Signal can also amplify the light intensity of reflected light signal so that data processing equipment can be more accurately using reflected light signal to carving
Erosion terminal is calculated.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting embodiment, other spies of the invention
Sign, objects and advantages will become more apparent upon：
Fig. 1 shows a kind of plasma processing apparatus structural representation for setting interferometric endpoint monitoring device；
Fig. 2 shows reflected light signal, background light signal and modulated signal schematic diagram；
Fig. 3 shows the reflected light signal, background light signal and modulated signal schematic diagram of another embodiment；
Fig. 4 shows the modulated signal with multiplication factor and reflected light signal, background light signal schematic diagram；
Fig. 5 shows another plasma processing apparatus structural representation for setting interferometric endpoint monitoring device.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.It should be noted that accompanying drawing is accurately compared using very simplified form, using non-
Example, and only to purpose that is convenient, clearly reaching aid illustration the present embodiment.
Fig. 1 shows a kind of plasma processing apparatus structural representation for setting interferometric endpoint monitoring device.In Fig. 1, etc.
Semiconductor chip 10 is placed in the inside of gas ions processing unit 100, is passed through inside the reaction chamber of plasma processing apparatus 100 anti-
Answer gas to be dissociated into plasma 111 in the presence of the radio-frequency power of plasma processing apparatus 100 is applied to, the grade from
Daughter performs etching to substrate 10.The method for producing plasma can be capacitive coupling, inductive mode or electricity
Sub- convolution mode, therefore the present invention is applied to the plasma processing apparatus of various ways.If generally include dried layer on substrate 10
Film to be etched, etching different films needs to use different reacting gas and etch process parameters.Plasma is etching
Reaction product can send the optical signal of different wave length in different thin-film process, and these optical signals are etching as background light signal
Process is continued for existing.
In the device and method of interferometric endpoint method (IEP) monitor plasma processes disclosed by the invention, one is dry
Relate to endpoint monitoring device and be provided for the progress endpoint monitoring of plasma processing unit 100.The interferometric endpoint monitoring device
Including an incident light source 102 and a spectrometer 104, an optical signal gateway 103 is arranged on the top of plasma processing apparatus 100
On wall, the optical signal to allow incident light source 102 to launch incides substrate surface into plasma processing apparatus, and allows
Optical signal after reflection enters the spectrometer 104 being arranged on outside plasma processing apparatus 100.Concrete operating principle is：It is incident
After light source 102 launches incident optical signal to the film surface that is etched, the light of film upper surface reflection is with penetrating quilt after the film
The light of subsurface material reflection interferes.It is different because film thickness determines the optical path difference of interfere two light
Optical path difference can form the interference fringe of interleaved again.Therefore, with the progress of etching technics, film be constantly etched it is thinned,
Under conditions of Δ d meets following equation, interference can be obtained and strengthened：
Δ d=λ/2n
In formula, λ is the wavelength of incident optical signal, and n is the refractive index of thin-film material, and Δ d is the change of monitored film thickness
Change, a Δ d change often occur, then the maximum of a light intensity can be shown on spectrometer 104.So with film thickness
Constantly it is thinned, many sinuous signal curves can be formed.On the premise of known incident wavelength of optical signal and refractive index,
The thickness change Δ d of monitored film, the sine wave signal curve received according to spectrometer can be calculated, it can be deduced that
There is the cycle that an interference is strengthened, using the monitoring film thickness changes delta d and produce a cycle of the thickness change
Etch rate actual in etching technics can be calculated.It can be calculated under the premise of known to etching film general thickness
Reach the time that etching terminal needs.
In monitoring process, because the background light signal intensity that plasma is sent in reaction chamber is larger, even meeting sometimes
The light signal strength reflected more than incident light on substrate membrane, because incident light and background light signal are all believed for full spectrum light
Number, when setting the optical signal of certain wavelength of spectrometer collection, the optical signal that spectrometer collection arrives is believed for the reflected light of the wavelength
Number and background light signal sum, noise caused by background light signal can give the meter using the above-mentioned etching terminal of reflected light signal progress
Calculation brings difficulty, can not carry out computing to etch rate as described above, in order to avoid spectrometer is receiving substrate membrane reflection
The background light signal sent during optical signal by plasma is influenceed, and ensures that spectrometer can accurately read incident optical signal,
The present invention needs to exclude the interference of background light signal.
In order to eliminate the interference of background light signal, interferometric endpoint monitoring device provided by the invention also includes data processing and filled
Put 114, the background light signal collected and reflected light signal sum are transported to data processing equipment 114 by spectrometer, at data
Manage device 114 and a modulated signal is applied to background light signal and reflected light signal sum, bias light is eliminated using the modulated signal
Signal.
Fig. 2 shows the modulated signal that the reflected light signal, background light signal and data processing equipment of spectrometer collection apply
Schematic diagram.It is a pulse incident light source that present invention selection, which sets incident light source 102, and it can be sent out with certain frequency into reaction chamber
The high energy pulse light of short duration is penetrated, the flash lamp such as with full spectrum, what flash lamp lighted within each pulse period
Time is extremely short, usually Microsecond grade, almost can launch instantaneous optical signal on a time point, therefore, in signal shown in Fig. 2
In figure, pulse incident optical signal is shown as having the perpendicular of certain intervals in pulse-echo optical signal caused by substrate surface reflection
Straightway, the length of vertical line segment illustrate the intensity of pulse-echo optical signal, and the time interval pulse of two vertical line segments enters
Penetrate the cycle t of light0.And the background light signal that plasma is sent exists always during whole plasma process, and light intensity
Excursion is smaller, is expressed as an approximate horizontal smoothed curve.Pulse-echo optical signal in spectrometer collection reaction chamber
And background light signal, and the optical signal collected is transported to data processing equipment 114, data processing equipment 114 applies one and adjusted
Signal processed eliminates the interference of background light signal using the modulated signal to the background light signal and reflected light signal.
The modulated signal is to believe with positive negative direction and with the incident optical signal frequency identical periodic signal, modulation
The key that number can eliminate background light signal is that modulated signal positive size corresponding to negative direction within each cycle is equal.
As shown by the dash line in figure 2, the modulated signal can be sinusoidal signal or cosine signal.Data processing equipment 114 is by modulated signal
The background light signal and pulse-echo optical signal that are arrived with spectrometer collection carry out multiplying, because background light signal is when adjacent
Between in section Strength Changes it is little, can be almost identical in a cycle, when applying a sinusoidal signal or cosine signal to it,
Due to sinusoidal signal or cosine signal in a cycle it is equal with minus numerical value more than zero numerical value, equivalent to will carry on the back
The light intensity numerical value of scape optical signal each cycle internal modulation be half be positive half be it is negative, therefore, the number within to each cycle
Value is overlapped computing, with being cancelled out each other after positive and negative light intensity numerical value superposition, so as to eliminate background light signal.Pulse-echo
The high energy pulse light of optical signals then short duration, light intensity is not in the only very short time in a light period
Zero, as long as control the modulated signal with pulse-echo light progress multiplying, each cycle internal modulation signal is 0
Position is not corresponding with reflected light signal, you can obtains the reflected light signal intensity with certain numerical value.Due to background light signal
Through being eliminated, the interior information to having to reflected light signal after multiplying folded structures of data processing equipment 114, and then accordingly
Perform etching the endpoint calculation of technique.In order to which the reflected light signal intensity numerical value for ensureing with being obtained after modulated signal computing is larger,
In order to the calculating to etching terminal, pulse-echo optical signal and sinusoidal signal or cosine signal are close to crest in each cycle
Position correspondence, it is preferred that the position of reflected light signal is corresponding with the crest location of sinusoidal signal or cosine signal.
Modulated signal of the present invention can also have in addition to sinusoidal signal and cosine signal that above-described embodiment describes
Various other forms, as long as can guarantee that modulated signal has positive negative direction and numerical value after negative direction integration is aligned in a cycle
It is identical both to realize the object of the invention.In the embodiment shown in fig. 3, a kind of pulse period letter with low and high level is disclosed
Number, as seen from the figure, it is that negative and positive and negative amplitude is identical a positive half period that the half period of modulated signal one, which is, therefore, will modulated
When the product of signal and background light signal is overlapped, the stack result in each cycle is zero, so as to realize to bias light
The denoising of signal.When carrying out multiplying, data processing equipment 114 avoids rising edge or trailing edge and the pulse of modulated signal
Reflected light signal position is corresponding, and then obtains the information of only reflected light signal, to perform etching the calculating of terminal accordingly.
Modulated signal can also be to the reflected light signal needed for calculating in addition to it can eliminate background light signal in the present invention
Strength values are amplified, and by setting the range value of modulated signal to be more than the strength values of reflected light signal, and set reflection
Optical signal is corresponding with the crest location of modulated signal, as shown in figure 4, when data processing equipment 114 collects to spectrometer 104
Optical signal and the modulated signal carry out multiplying when, background light signal is eliminated, and reflected light signal intensity is exaggerated A
(A is the amplitude of modulated signal) again.Reflected light signal light intensity numerical value after amplification can make up the incidence of the transmitting of incident light source 102
The problems such as luminous intensity is weaker, and the caused forecasting inaccuracy to etching terminal of reflected light signal unobvious is true.The present invention utilizes a number
The modulated signal of various amplitudes can be easily produced according to processing unit 114, according to the incident intensity of incident light source and calculating
Required intensity of reflected light carries out flexible modulation.
The cycle that pulse incident light source 102 of the present invention launches incident optical signal can set in several ways,
Flash lamp as the present invention uses can periodically send incident optical signal, in order to more flexibly adjust incident optical signal
Cycle, can also be as shown in figure 5, the spectrometer 104 conveys the light period that a pulse signal triggers incident light source.Using figure
Mode shown in 5, which triggers incident light source 102, can effectively control the cycle synchronisation of reflected light signal and modulated signal, and can
Reflected light signal and the position relationship of modulated signal are adjusted, in the calculating process of data processing equipment, what is optimized is anti-
Penetrate optical signal information.
Compared in the prior art by setting incident light source periodically to open and disconnect so that spectrometer collection obtains arteries and veins
Formula reflected light signal is rushed, the present invention can avoid frequently using the flash lamp for persistently launching pulsed optical signal as incident light source
Mechanical switch is carried out to incident light source, reduce the mechanical damage of incident light source；Simultaneously as in flash lamp each pulse period
The time of transmitting incident light is shorter than the time that the incident light source controlled by mechanical switch launches incident light in a cycle, can
To extend effective fluorescent lifetime of incident light source, the service life of incident light source is improved.In addition, the present invention uses flash lamp conduct
Incident light source, the incident light of full spectrum can be provided, allow the user of plasma processing apparatus to have the choosing of more wave-length coverages
Select.Meanwhile flash lamp can either ensure spectrometer according to the shorter high-energy light signal of some cycles emission duration
The reflected light signal intensity received is enough big, while continuous illumination time in the of short duration use longevity that can extend light source of incident light source
Life.Spectrometer collection to optical signal can handle computing in real time, improve the degree of accuracy and efficiency.
The present invention applies a modulated signal by the optical signal for arriving spectrometer collection, utilizes the positive and negative amplitude of modulated signal
The identical interference for removing background light signal of equal and with incident optical signal frequency, in addition, modulated signal can amplify instead
Light signal strength numerical value is penetrated, improves the accuracy for calculating etching terminal.So as to accurately monitor the etching technics process of substrate membrane.
The data processing equipment can be a computer system.
IEP of the present invention can also monitor the process of depositing operation in addition to it can monitor etching technics, with etching
Unlike technique, depositing operation is that a film thickness constantly becomes big process, by entering to deposition reaction intracavitary projection one
Penetrate optical signal, according to described above, the sedimentation rate of depositing operation can be calculated, when according to the accurate sedimentation rate and
The film thickness for needing to deposit can accurately learn the terminal of depositing operation.
Although the present invention discloses as above in a preferred embodiment thereof, it is not for limiting the present invention, any this area
Technical staff without departing from the spirit and scope of the present invention, can make possible variation and modification, therefore the present invention
Protection domain should be defined by the scope that the claims in the present invention are defined.
Claims (20)
1. a kind of plasma processing apparatus for monitoring manufacturing process, include the reaction chamber and monitoring Substrate treatment of a processing substrate
The monitoring device of processing procedure, it is characterised in that the monitoring device includes：
One incident light source, launch pulse incident light for the substrate surface into the reaction chamber；
One spectrometer, for gathering the optical signal in the reaction chamber, the optical signal includes the pulse incident light in substrate
The background light signal that the pulse-echo optical signal and processing thereof plasma on surface are sent；
One data processing equipment, for receive the spectrometer collection to optical signal and cycle and the pulse incident light are provided
Cycle identical modulated signal, the modulated signal have positive and negative both direction, and the modulated signal and institute in each cycle
Cancelled out each other after stating the product superposition of background light signal；
The pulse-echo optical signal and the product of the modulated signal are not zero；
The end of the plasma process processing procedure is calculated using the pulse-echo optical signal of acquisition for the data processing equipment
Point.
2. device as claimed in claim 1, it is characterised in that：Modulated signal direction in a cycle is positive signal
Integral area is identical for negative signal integration area with direction.
3. device as claimed in claim 1, it is characterised in that：The pulse-echo optical signal and the product of the modulated signal
More than 0.
4. device as claimed in claim 1, it is characterised in that：The modulated signal is sinusoidal signal or cosine signal.
5. device as claimed in claim 4, it is characterised in that：In each cycle, the pulse-echo optical signal with it is described just
The crest of string signal or cosine signal is corresponding.
6. device as claimed in claim 4, it is characterised in that：In each cycle, the pulse-echo optical signal with it is described just
The trough of string signal or cosine signal is corresponding.
7. device as claimed in claim 1, it is characterised in that：The modulated signal is low and high level pulse-period signal, institute
High level is stated more than zero, the low level is less than zero, region area corresponding to high level and low level pair in one cycle
The region area answered is equal in magnitude.
8. the device as described in claim 4 or 7, it is characterised in that：The amplitude of the modulated signal is more than or equal to the pulse
The light intensity numerical value of reflected light signal.
9. device as claimed in claim 1, it is characterised in that：The incident light that the incident light source is sent is full spectrum.
10. device as claimed in claim 1, it is characterised in that：The incident light source is flash lamp.
11. device as claimed in claim 1, it is characterised in that the spectrometer sends pulse-triggered to the incident light source
Signal, to control the incident light source to launch the cycle of pulse incident light.
12. a kind of method for monitoring plasma-treating technology, methods described are carried out in a plasma processing apparatus, it is special
Sign is that methods described comprises the following steps：
Place the substrates in the reaction chamber of the plasma processing apparatus, the substrate is carried out at plasma process
Reason；
Launch a pulse incident light to the substrate, the pulse incident light reflects in substrate surface；
The optical signal is simultaneously transported to a data processing equipment by the optical signal that is sent described in a spectrometer collection in reaction chamber,
The optical signal includes plasma reasons for its use optical signal in the pulse-echo optical signal and reaction chamber of substrate surface reflection；
The data processing equipment provides one and the pulse incident light cycle identical modulated signal, and to the modulated signal and
The optical signal of spectrometer collection carries out multiplying；
The modulated signal is arranged to have positive negative direction and mutually supported within each cycle with the product of the background light signal
Disappear；
The position of the modulated signal and the pulse-echo optical signal is set so that the product of the two is not zero；
Utilize the endpoint calculation for eliminating the pulse-echo optical signal information after background light signal and carrying out plasma-treating technology.
13. method as claimed in claim 12, it is characterised in that：The data processing equipment adjusts the modulated signal and institute
State the position of pulse-echo optical signal so that the product of the two is more than zero.
14. method as claimed in claim 12, it is characterised in that：The modulated signal that the data processing equipment provides is sine
Signal or cosine signal.
15. method as claimed in claim 12, it is characterised in that：The data processing equipment controls the pulse incident light letter
It is number corresponding with the crest or trough of the sinusoidal modulation signal or cosine-modulation signal.
16. method as claimed in claim 12, it is characterised in that：It is anti-that the amplitude of the modulated signal is more than or equal to the pulse
Penetrate the intensity of optical signal.
17. method as claimed in claim 12, it is characterised in that：The incident optical signal is full spectral signal.
18. method as claimed in claim 12, it is characterised in that:The modulated signal is low and high level pulse-period signal,
The high level is more than zero, and the low level is less than zero, region area and low level corresponding to high level in one cycle
Corresponding region area is equal in magnitude.
19. method as claimed in claim 12, it is characterised in that：The spectrometer send a pulse triggering signal to it is described enter
Light source is penetrated, controls the pulse period of the incident light source.
20. method as claimed in claim 12, it is characterised in that：The data processing equipment is a computer system.
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| TW106108403A TWI640031B (en) | 2016-06-28 | 2017-03-14 | Plasma processing device and method for monitoring plasma process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114582700A (en) * | 2022-03-02 | 2022-06-03 | 北京航空航天大学 | Etching end point detection method and device |
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| TWI640031B (en) | 2018-11-01 |
| CN107546094B (en) | 2019-05-03 |
| TW201812827A (en) | 2018-04-01 |
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