CN107546141A - The apparatus and method for monitoring plasma process processing procedure - Google Patents
The apparatus and method for monitoring plasma process processing procedure Download PDFInfo
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- CN107546141A CN107546141A CN201610487977.XA CN201610487977A CN107546141A CN 107546141 A CN107546141 A CN 107546141A CN 201610487977 A CN201610487977 A CN 201610487977A CN 107546141 A CN107546141 A CN 107546141A
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Abstract
The invention discloses a kind of plasma processing apparatus and method for monitoring manufacturing process, one monitoring device of plasm reaction cavity and monitoring Substrate treatment processing procedure including a processing substrate, the monitoring device includes an incident light source, launches pulsed optical signals for the substrate surface into plasma processing apparatus；One spectrometer, the optical signal sent in the reaction chamber is gathered with the second pulse frequency；Second pulse frequency is more than or equal to 2 times of first pulse frequency so that the spectrometer gathers at least two groups of optical signals within an incident pulse optical signal cycle；One data processing equipment, it is connected with the spectrometer, the optical signal for being arrived to the spectrometer collection carries out computing, with influence of the elimination reaction intracavitary plasma reasons for its use optical signal to reflected light signal.
Description
Technical field
The present invention relates to plasma process processing technology field, more particularly to a kind of plasma processing processing procedure to be carried out
The technical field of monitoring.
Background technology
Plasma treatment technique is widely used in semiconductor fabrication process.Semiconductor chip is being deposited or carved
, it is necessary to close supervision be carried out to manufacturing process, to ensure that depositing operation or etching technics result are well controlled during erosion.
A kind of currently used etching technics control method is optical emission spectroscopy (OES).Atom or molecule quilt in plasma
Electron excitation is to the light that after excitation state, can launch specific wavelength during another energy state is returned to.Not homoatomic or
The wavelength for the light wave that person's molecule is excited is different, and the change of the light intensity of light wave reflects atom or molecule in plasma
Change in concentration.OES is will can to reflect plasma etching change in process, form closely related material with plasma chemistry
The characteristic spectral line (OES characteristic spectral lines) of plasma extract, by the change for detecting its characteristic spectral line signal intensity in real time
Change, to provide the information of the response situation in plasma etch process, the limitation of this method is that film can only be monitored
State after the completion of etching, only finished when a kind of destination layer being etched etches, plasma etching to next layer of destination layer
When, the characteristic spectral line of corresponding plasma just has significant change, therefore this method is only used for the terminal prison of etching technics
Survey.
With being continuously increased for the device integration density in integrated circuit and complexity, to the strict of semiconductor processes
Control is just particularly important.For the polysilicon gate etching technique of sub- profound and subtle rice, because the thickness of grid oxide layer has become
Must be very thin, how accurately to control plasma etch process is the technical challenge that people face.Partly lead at present
The industrial used High Density Plasma Etching System of body, such as inductively coupled plasma (ICP) source, capacitiveiy coupled plasma
Body (CCP) source, and electron spin resonance plasma (ECR) source etc..Its caused plasma has higher etching
Speed, if technology controlling and process is unreasonable, the overetch of appearance is easy to cause the damage of lower layer of material, in turn results in device
The failure of part.Therefore must be to the parameter of some in etching process, such as the chemical gas, etch period, etch rate of etching
And the parameter such as etching selection ratio is strictly controlled.In addition, the trickle change of etching machine state, such as gas stream in reaction cavity
Amount, temperature, the reflux state of gas or the difference between chip between batches, can all have influence on the control to etching parameters
System.The situation of change of various parameters in etching process must be thus monitored, to ensure the uniformity etched in etching process.And do
It is exactly etching process is monitored in real time and to design to realize to relate to end-point method (IEP).
Interferometric endpoint method (IEP) be an incident optical signal to surface of semiconductor chip, incident optical signal is through semiconductor chip
The information of substrate membrane thickness change is carried after transmitting, by being measured to the wavelength of optical signal after reflection, and according to survey
Amount result carries out analysis calculating, it can be deduced that actual etch rate, realizes the etching process of monitoring substrate membrane in real time.But
During to spectrum monitoring, specific wavelength that atom or molecule in plasma can be launched after electron excitation to excitation state
Optical signal exist always, and intensity is larger, and the light signal strength that even plasma is sent sometimes can exceed incident optical signal
Intensity, the reading to the incident optical signal after reflection is disturbed so that measurement incident optical signal becomes difficult.
The content of the invention
In order to solve the above-mentioned technical problem, the present invention provides a kind of plasma processing apparatus for monitoring manufacturing process, bag
Include the reaction chamber of a processing substrate and monitor a monitoring device of Substrate treatment processing procedure, the monitoring device includes：
One incident light source, incident pulse light is launched with substrate surface of first pulse frequency into reaction chamber；
One spectrometer, the optical signal sent in the reaction chamber is gathered with the second pulse frequency；
Second pulse frequency is more than or equal to 2 times of first pulse frequency so that the spectrometer enters at one
Collection at least two groups of optical signals in the pulsed optical signals cycle are penetrated, one of which optical signal includes reflection of the incident light in substrate surface
Optical signal and plasma reasons for its use optical signal sum in reaction chamber, one group of optical signal only have plasma in reaction chamber to produce
Raw background light signal；
One data processing equipment, the optical signal for being arrived to the spectrometer collection carries out computing, with elimination reaction intracavitary
Influence of the plasma reasons for its use optical signal to reflected light signal；
The data processing equipment obtains institute by the use of the reflected light signal after background light signal influences is eliminated as calculation basis
State the processing terminal of substrate.
Preferably, second pulse frequency is 2 n powers times of first pulse frequency, and the n is more than or equal to 1.
Preferably, the incident light that the incident light source is sent is full spectrum.
Preferably, the incident light source is flash lamp.
Preferably, the pulse period size of the pulse incident light is variable.
Preferably, the spectrometer is used for the wavelength and intensity for gathering optical signal in plasm reaction cavity, the spectrum
Instrument is ccd image controller.
Preferably, the spectrometer launches pulse signal to the incident light source, to control the incident light source to transmit into
Penetrate the cycle of optical signal.
Further, the invention also discloses a kind of method for monitoring plasma-treating technology, methods described is in first-class
Carried out in gas ions processing unit, methods described comprises the following steps：
Place the substrates in the reaction chamber of a plasma processing apparatus, the substrate is carried out at plasma process
Reason；
Launch a pulsed incident optical signal to the substrate, the incident optical signal reflects on substrate, described
The pulse cycle frequency of pulsed incident optical signal is the first pulse frequency；
The optical signal sent in the reaction chamber is gathered with the second pulse frequency with a spectrometer, the optical signal include into
Penetrate light plasma reasons for its use optical signal in the reflected light signal and reaction chamber of substrate surface；
Second pulse frequency is set more than or equal to 2 times of first pulse frequency；
Within a first pulse frequency cycle, the spectrometer collection produces to one group of reflected light signal and plasma
Background light signal sum and at least one set of there was only plasma reasons for its use optical signal；
The optical signal collected is transported to a data processing equipment by the spectrometer, and the data processing equipment is by spectrum
The reflected light signal that instrument collects only has with plasma reasons for its use optical signal sum with one group to be carried on the back caused by plasma
Scape optical signal does subtraction, obtains interference-free reflected light signal, and the data processing equipment is interference-free according to what is obtained
The processing terminal of the substrate is calculated in reflected light signal.
Preferably, the incident optical signal that the high level of the spectrometer collection reflected light signal is sent with the incident light source
Leading edge position is different.
Preferably, the frequency of the spectrometer collection optical signal is twice of incident optical signal pulse frequency, is entered at one
Penetrate in the light pulse cycle, the spectrometer includes two collection optical signal cycles, wherein collection reflected light letter in a cycle
Number with plasma reasons for its use optical signal sum, second period only collects plasma reasons for its use optical signal,
The optical signal of collection and the optical signal of collection in second round do subtraction and can eliminate background light signal pair in the period 1
The interference of reflected light signal.
Preferably, when the frequency of the spectrometer collection optical signal exceedes twice of the incident optical signal pulse frequency,
Within an incident light pulse cycle, some groups of the spectrometer collection only has plasma reasons for its use optical signal, described
Data processing equipment is chosen one of which background light signal and produced with the reflected light signal that the spectrometer collection arrives and plasma
Raw background light signal sum does subtraction, to eliminate interference of the background light signal to reflected light signal.
Preferably, the incident optical signal is full spectral signal.
Preferably, the spectrometer selects the optical signal of a certain wavelength to carry out signal acquisition
Preferably, the high energy pulse of the incident light source transmitting short duration.
Preferably, the data processing equipment is a computer system.
The advantage of the invention is that：Selection one persistently launch pulsed light incident light source as active light source into reaction chamber
Substrate surface transmitting first frequency pulse incident light, set the frequency of optical signal in spectrometer collection reaction chamber to be more than or equal to
Twice of the first frequency.I.e. spectrometer collection at least gathers optical signal twice in a pulse incident light light period,
Reflected light signal and background light signal sum are wherein once gathered, remaining only gathers background light signal, the collection in each cycle
The reflected light that reflected light signal subtracts the background light signal only gathered with background light signal sum and can obtain removing after disturbing is believed
Number.The present invention can be avoided frequently to incident light source using the flash lamp for persistently launching pulsed optical signal as incident light source
Mechanical switch is carried out, reduces the mechanical damage of incident light source；Simultaneously as transmitting incident light in flash lamp each pulse period
Time is shorter than the time that the incident light source controlled by mechanical switch launches incident light in a cycle, can extend incident light
Effective fluorescent lifetime in source, improve the service life of incident light source.In addition, the present invention uses flash lamp as incident light source, can
To provide the incident light of full spectrum, the incident light of full spectrum can allow the user of plasma processing apparatus to have more multi-wavelength model
The selection enclosed.Meanwhile flash lamp be able to can either ensure according to the shorter high-energy light signal of some cycles emission duration
The reflected light signal intensity that spectrometer receives is enough big, while the continuous illumination time of incident light source of short duration can extend light source
Service life, and the time that spectrometer is integrated to the optical signal collected is reduced, improve operation efficiency.Spectrometer collection arrives
Optical signal can handle computing in real time, improve the degree of accuracy and efficiency.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting embodiment, other spies of the invention
Sign, objects and advantages will become more apparent upon：
Fig. 1 shows a kind of plasma processing apparatus structural representation for setting interferometric endpoint monitoring device；
Fig. 2 shows the working pulse signal curve figure of incident light source and spectrometer；
Fig. 3 shows another plasma processing apparatus structural representation for setting interferometric endpoint monitoring device.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.It should be noted that accompanying drawing is accurately compared using very simplified form, using non-
Example, and only to purpose that is convenient, clearly reaching aid illustration the present embodiment.
Fig. 1 shows a kind of plasma processing apparatus structural representation for setting interferometric endpoint monitoring device.In Fig. 1, etc.
Semiconductor chip 10 is placed in the inside of gas ions processing unit 100, is passed through inside the reaction chamber of plasma processing apparatus 100 anti-
Answer gas to be dissociated into plasma 111 in the presence of the radio-frequency power of plasma processing apparatus 100 is applied to, the grade from
Daughter performs etching to substrate 10.If generally including dried layer film to be etched on substrate 10, etching different films needs to use
Different reacting gas and etch process parameters.Plasma reaction product in different thin-film process are etched can send different ripples
Long optical signal, these optical signals are continued for existing as background light signal in etching process.
In the device and method of interferometric endpoint method (IEP) monitor plasma processes disclosed by the invention, one is dry
Relate to endpoint monitoring device and be provided for the progress endpoint monitoring of plasma processing unit 100.The interferometric endpoint monitoring device
Including an incident light source 102 and a spectrometer 104, an optical signal gateway 103 is arranged on the top of plasma processing apparatus 100
On wall, the optical signal to allow incident light source 102 to launch incides substrate surface into plasma processing apparatus, and allows
Optical signal after reflection enters the spectrometer 104 being arranged on outside plasma processing apparatus 100.Concrete operating principle is：It is incident
After light source 102 launches incident optical signal to the film surface that is etched, the light of film upper surface reflection is with penetrating quilt after the film
The light of subsurface material reflection interferes.It is different because film thickness determines the optical path difference of interfere two light
Optical path difference can form the interference fringe of interleaved again.Therefore, with the progress of etching technics, film be constantly etched it is thinned,
Under conditions of Δ d meets following equation, interference can be obtained and strengthened：
Δ d=λ/2n
In formula, λ is the wavelength of incident optical signal, and n is the refractive index of thin-film material, and Δ d is the change of monitored film thickness
Change, a Δ d change often occur, then the maximum of a light intensity can be shown on spectrometer 104.So with film thickness
Constantly it is thinned, many sinuous signal curves can be formed.On the premise of known incident wavelength of optical signal and refractive index,
The thickness change Δ d of monitored film, the sine wave signal curve received according to spectrometer can be calculated, it can be deduced that
There is the cycle that an interference is strengthened, using the monitoring film thickness changes delta d and produce a cycle of the thickness change
Etch rate actual in etching technics can be calculated.It can be calculated under the premise of known to etching film general thickness
Reach the time that etching terminal needs.
In monitoring process, because the background light signal intensity that plasma is sent in reaction chamber is larger, even meeting sometimes
The light signal strength reflected more than incident light on substrate membrane, because incident light and background light signal are all believed for full spectrum light
Number, when setting the optical signal of certain wavelength of spectrometer collection, the optical signal that spectrometer collection arrives is believed for the reflected light of the wavelength
Number and background light signal sum, can not as described above to etch rate carry out computing, in order to avoid spectrometer receive substrate
The background light signal sent during film reflector optical signal by plasma is influenceed, and ensures that spectrometer can accurately read incidence
Optical signal, the present invention need to exclude the interference of background light signal.
Fig. 2 shows the working pulse signal curve figure of incident light source and spectrometer, wherein the first width curve illustrates this hair
The reflected light signal sent in bright plasm reaction cavity and background light signal light intensity schematic diagram, the second width curve illustrate spectrum
Instrument 104 gathers the pulse period schematic diagram of optical signal in reaction chamber.Present invention selection sets incident light source 102 to be held for a transmitting is short
The light source of the high-energy light pulse of continuous time, such as there is the flash lamp of full spectrum, what flash lamp lighted within each pulse period
Time is extremely short, usually Microsecond grade, therefore, in the first width curve map, due to each cycle internal reflection optical signal it is lasting when
Between it is extremely short, almost can launch instantaneous optical signal on a time point, so by each cycle internal reflection light signal strength table
It is now the vertical line segment with certain intervals, the length of vertical line segment illustrates the intensity of pulse-echo optical signal, two lines section
Time interval pulse incident optical signal cycle.And the background light signal that plasma is sent is in the whole plasma process phase
Between exist always, light intensity excursion is smaller, is expressed as an approximate horizontal smoothed curve.For convenience of description, by incident light
The pulse frequency in source is referred to as the first pulse frequency, within the pulse period of each incident light source, when only extremely short in reaction chamber
Between reflected light signal be present, within the cycle remaining time there was only background light signal presence.Light is shown in Fig. 2 the second width curve map
The pulse period schematic diagram of optical signal in spectrometer collection reaction chamber, when pulse signal is located at high level, spectrometer collection reaction
The optical signal collected is simultaneously transported in data processing equipment 114 and carries out data operation by intracavitary optical signal.In order to express easily,
The frequency of spectrometer collection optical signal is referred to as the second pulse frequency.In order to realize the purpose of the present invention, the second pulse frequency will
More than or equal to twice of the first pulse frequency, i.e., within an incident light pulse cycle, spectrometer 104 is believed the light in reaction chamber
Number signal acquisition twice is at least carried out, wherein the optical signal once collected includes reflected light signal and background light signal sum,
The optical signal that other times collect only has background light signal.The light signal strength collected is transported to what is be attached thereto by spectrometer
Data processing equipment 114, data processing equipment 114 is interior to calculate the reflected light signal that spectrometer collection arrives in each incident photoperiod
With background light signal sum and the difference of background light signal, and then show that incident light occurs instead on substrate in each incident photoperiod
The reflected light signal light intensity penetrated.To eliminate influence of the background light signal to calculating substrate etch rate.
In the present invention, the device 112 of the control incident light source glow frequency of the connection of incident light source 102 one, the control
Incident light source glow frequency can control the pulse frequency of incident light source such as pulse triggering means 112, pulse triggering means 112
Rate, the cycle that pulse incident light source 102 of the present invention launches incident optical signal can set in several ways, such as this hair
The flash lamp of bright use can periodically send incident optical signal, in order to more flexibly adjust the cycle of incident optical signal,
Can also as shown in figure 3, the spectrometer 104 gather reaction chamber in optical signal while, conveying one pulse signal trigger into
Penetrate the light period of light source.In embodiment shown in Fig. 3, the glow frequency of incident light source and the frequency of collection optical signal are by light
Spectrometer 104 controls, and therefore, it is possible to more accurate control within an incident light pulse cycle, spectrometer 104 is in reaction chamber
Optical signal at least carry out signal acquisition twice.
In the present invention, the frequency acquisition of spectrometer be at least incident light period frequency 2 times could be an incident light week
Both reflected light signal and background light signal sum had been collected in phase, has collected the light that areflexia optical signal only has background light signal again
By force.Fig. 2 shows the situation when frequency acquisition of spectrometer is just 2 times of incident light period frequency, in a further embodiment,
The frequency acquisition of spectrometer can be the n powers times of the 2 of incident light period frequency, and now, spectrometer is in an incident light pulse
The light intensity of more than one group of only background light signal can be collected in cycle, selects any group and the background light signal collected
Intensity does subtraction with spectrometer collection to reflected light signal light intensity and background light signal light intensity sum, can obtain reflected light
The light intensity of signal.Because incident optical signal is near the transient pulse on a time point, in order to avoid spectrometer collection light
Signal acquisition is unstable when the high level of signal is located at rising edge, it is preferred that incident optical signal and spectrometer collection optical signal
High level has different rising edges.
Compared to by setting incident light source periodically to open and disconnect so that spectrometer collection obtains pulsed reflected light
Signal, the present invention can be avoided frequently to incident light using the flash lamp for persistently launching pulsed optical signal as incident light source
Source carries out mechanical switch, reduces the mechanical damage of incident light source；Simultaneously as transmitting incident light in flash lamp each pulse period
Time be shorter than the incident light source controlled by mechanical switch and launch time of incident light in a cycle, incidence can be extended
Effective fluorescent lifetime of light source, improve the service life of incident light source.In addition, the present invention using flash lamp as incident light source,
The incident light of full spectrum can be provided, the incident light of full spectrum can allow the user of plasma processing apparatus to have more multi-wavelength
The selection of scope.Meanwhile flash lamp be able to can either be protected according to the shorter high-energy light signal of some cycles emission duration
The reflected light signal intensity that receives of card spectrometer is enough big, while the continuous illumination time of incident light source of short duration can extend light source
Service life, and reduce the time that spectrometer is integrated to the optical signal collected, improve operation efficiency.Spectrometer collection
To optical signal can handle computing in real time, improve the degree of accuracy and efficiency.
Reflected light signal light intensity that spectrometer 104 collects each incident optical signal cycle and background light signal light intensity it
With and background light signal intensity be transported to connected data processing equipment, by right in data processing equipment 114
The two carries out subtraction and can obtain the reflected light signal after incident light source 102 reflects on substrate membrane.By setting
Put incident light source and persistently launch pulsed incident optical signal, background light signal can be removed, leave behind has to monitoring etching technics
Reflected light signal on substrate membrane, by being read out to the wavelength of the reflected light signal and according to above-described public affairs
Formula calculates, you can the actual etch rate of plasma processing apparatus interior substrate film is obtained, it is thin so as to accurately monitor substrate
The etching technics process of film.The data processing equipment is a computer system.
The cycle that pulse incident light source 102 of the present invention launches incident optical signal can set in several ways,
Flash lamp as the present invention uses can periodically send incident optical signal, in order to more flexibly adjust incident optical signal
Cycle, can also be as shown in figure 3, the spectrometer 104 conveys the light period that a pulse signal triggers incident light source.Using figure
Mode shown in 3, which triggers incident light source 102, can effectively control reflected light signal cycle and spectrometer collection optical signal cycle
Relation, realize precise acquisition of the spectrometer to optical signal.
IEP of the present invention can also monitor the process of depositing operation in addition to it can monitor etching technics, with etching
Unlike technique, depositing operation is that a film thickness constantly becomes big process, by entering to deposition reaction intracavitary projection one
Penetrate optical signal, according to described above, the sedimentation rate of depositing operation can be calculated, when according to the accurate sedimentation rate and
The film thickness for needing to deposit can accurately learn the terminal of depositing operation.
Although the present invention discloses as above in a preferred embodiment thereof, it is not for limiting the present invention, any this area
Technical staff without departing from the spirit and scope of the present invention, can make possible variation and modification, therefore the present invention
Protection domain should be defined by the scope that the claims in the present invention are defined.
Claims (15)
1. a kind of plasma processing apparatus for monitoring manufacturing process, include the reaction chamber and monitoring Substrate treatment of a processing substrate
One monitoring device of processing procedure, it is characterised in that the monitoring device includes：
One incident light source, incident pulse light is launched with substrate surface of first pulse frequency into reaction chamber；
One spectrometer, the optical signal sent in the reaction chamber is gathered with the second pulse frequency；
Second pulse frequency is more than or equal to 2 times of first pulse frequency so that the spectrometer is in an incident arteries and veins
Collection at least two groups of optical signals in the pulsed light signal cycle, one of which optical signal includes incident light to be believed in the reflected light of substrate surface
Number with plasma reasons for its use optical signal sum in reaction chamber, one group of optical signal only has in reaction chamber caused by plasma
Background light signal；
One data processing equipment, computing is carried out for the optical signal that is arrived to the spectrometer collection, with elimination reaction intracavitary etc. from
Influence of the daughter reasons for its use optical signal to reflected light signal；
The data processing equipment obtains the base by the use of the reflected light signal after background light signal influences is eliminated as calculation basis
The processing terminal of piece.
2. device as claimed in claim 1, it is characterised in that：Second pulse frequency is the 2 of first pulse frequency
N powers times, the n is more than or equal to 1.
3. device as claimed in claim 1, it is characterised in that：The incident light that the incident light source is sent is full spectrum.
4. device as claimed in claim 1, it is characterised in that：The incident light source is flash lamp.
5. device as claimed in claim 1, it is characterised in that：The pulse period size of the pulse incident light is variable.
6. device as claimed in claim 1, it is characterised in that the spectrometer, which is used to gather light in plasm reaction cavity, to be believed
Number wavelength and intensity, the spectrometer be ccd image controller.
7. device as claimed in claim 1, it is characterised in that the spectrometer launches pulse signal to the incident light source,
To control the incident light source to send the cycle of incident optical signal.
8. a kind of method for monitoring plasma-treating technology, methods described are carried out in a plasma processing apparatus, it is special
Sign is that methods described comprises the following steps：
Place the substrates in the reaction chamber of a plasma processing apparatus, plasma process processing is carried out to the substrate；
Launch a pulsed incident optical signal to the substrate, the incident optical signal reflects on substrate, the pulse
The pulse cycle frequency of formula incident optical signal is the first pulse frequency；
The optical signal sent in the reaction chamber is gathered with the second pulse frequency with a spectrometer, the optical signal includes incident light
The plasma reasons for its use optical signal in the reflected light signal and reaction chamber of substrate surface；
Second pulse frequency is set more than or equal to 2 times of first pulse frequency；
Within a first pulse frequency cycle, the spectrometer collection to one group of reflected light signal and the back of the body caused by plasma
Scape optical signal sum and at least one set of only plasma reasons for its use optical signal；
The optical signal collected is transported to a data processing equipment by the spectrometer, and the data processing equipment adopts spectrometer
The reflected light signal collected only has plasma reasons for its use light with plasma reasons for its use optical signal sum with one group
Signal does subtraction, obtains interference-free reflected light signal, the data processing equipment is according to obtained interference-free reflection
The processing terminal of the substrate is calculated in optical signal.
9. method as claimed in claim 8, it is characterised in that：The high level of the spectrometer collection reflected light signal with it is described
The incident optical signal leading edge position that incident light source is sent is different.
10. method as claimed in claim 8, it is characterised in that：The frequency of the spectrometer collection optical signal is believed for incident light
Twice of number pulse frequency, within an incident light pulse cycle, the spectrometer includes two collection optical signal cycles, wherein
Collection reflected light signal and plasma reasons for its use optical signal sum, second period only collect in a cycle
Gas ions reasons for its use optical signal, the optical signal of collection and the optical signal of collection in second round do and subtracted in the period 1
Method can eliminate interference of the background light signal to reflected light signal.
11. method as claimed in claim 8, it is characterised in that：The frequency of the spectrometer collection optical signal enters described in exceeding
When penetrating twice of optical signal pulses frequency, within an incident light pulse cycle, some groups of the spectrometer collection only wait from
Daughter reasons for its use optical signal, the data processing equipment are chosen one of which background light signal and arrived with the spectrometer collection
Reflected light signal and plasma reasons for its use optical signal sum do subtraction, to eliminate the background light signal to reflected light
The interference of signal.
12. method as claimed in claim 8, it is characterised in that：The incident optical signal is full spectral signal.
13. method as claimed in claim 8, it is characterised in that:The spectrometer selects the optical signal of a certain wavelength to carry out letter
Number collection.
14. method as claimed in claim 8, it is characterised in that：The high-energy arteries and veins of the incident light source transmitting short duration
Punching.
15. method as claimed in claim 8, it is characterised in that：The data processing equipment is a computer system.
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| CN201610487977.XA CN107546141B (en) | 2016-06-28 | 2016-06-28 | Apparatus and method for monitoring plasma process |
| TW106108413A TWI633575B (en) | 2016-06-28 | 2017-03-14 | Plasma processing device for monitoring technology process and monitoring plasma treatment Technical process approach |
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| CN114582700A (en) * | 2022-03-02 | 2022-06-03 | 北京航空航天大学 | Etching end point detection method and device |
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| CN114582700A (en) * | 2022-03-02 | 2022-06-03 | 北京航空航天大学 | Etching end point detection method and device |
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| TW201801128A (en) | 2018-01-01 |
| CN107546141B (en) | 2020-12-04 |
| TWI633575B (en) | 2018-08-21 |
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