CN107546141B - Apparatus and method for monitoring plasma process - Google Patents
Apparatus and method for monitoring plasma process Download PDFInfo
- Publication number
- CN107546141B CN107546141B CN201610487977.XA CN201610487977A CN107546141B CN 107546141 B CN107546141 B CN 107546141B CN 201610487977 A CN201610487977 A CN 201610487977A CN 107546141 B CN107546141 B CN 107546141B
- Authority
- CN
- China
- Prior art keywords
- signal
- spectrometer
- incident light
- plasma
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses a plasma processing device and a method for monitoring a process, which comprises a plasma reaction cavity for processing a substrate and a monitoring device for monitoring the substrate processing process, wherein the monitoring device comprises an incident light source for emitting pulsed light signals to the surface of the substrate in the plasma processing device; the spectrometer collects the optical signal emitted by the reaction cavity at a second pulse frequency; the second pulse frequency is more than or equal to 2 times of the first pulse frequency, so that the spectrometer collects at least two groups of optical signals in one period of incident pulse optical signals; and the data processing device is connected with the spectrometer and is used for calculating the optical signals collected by the spectrometer so as to eliminate the influence of the background optical signals generated by the plasma in the reaction cavity on the reflected optical signals.
Description
Technical Field
The invention relates to the technical field of plasma process treatment, in particular to the technical field of monitoring a plasma treatment process.
Background
Plasma processing techniques are widely used in semiconductor fabrication processes. In the deposition or etching process of semiconductor substrates, the process needs to be closely monitored to ensure that the deposition process or etching process results are well controlled. One commonly used method of controlling the etching process is Optical Emission Spectroscopy (OES). After atoms or molecules in the plasma are excited by electrons to an excited state, light of a specific wavelength is emitted during the return to another energy state. The wavelengths of the light waves excited by different atoms or molecules are different, and the change of the light intensity of the light waves reflects the change of the concentration of the atoms or molecules in the plasma. OES extracts characteristic spectral lines (OES characteristic spectral lines) of plasma of substances which can reflect changes of the plasma etching process and are closely related to the chemical composition of the plasma, and provides information of reaction conditions in the plasma etching process by detecting changes of signal intensity of the characteristic spectral lines in real time.
With the increasing integration density and complexity of devices in integrated circuits, strict control of semiconductor processes is important. For the sub-deep micron polysilicon gate etching process, since the thickness of the gate oxide layer has become very thin, how to precisely control the plasma etching process is a technical challenge. High density plasma etchers are currently used in the semiconductor industry, such as Inductively Coupled Plasma (ICP) sources, Capacitively Coupled Plasma (CCP) sources, and electron spin resonance plasma (ECR) sources. The generated plasma has a high etching rate, and if the process control is not reasonable, the generated excessive etching can easily cause the damage of the next layer of material, thereby causing the failure of the device. Therefore, parameters of the etching process, such as chemical gas for etching, etching time, etching rate, etching selectivity, etc., must be strictly controlled. In addition, small changes in the state of the etcher, such as gas flow, temperature, gas recirculation within the chamber, or batch-to-batch wafer variation, can affect the control of the etch parameters. The variation of various parameters during the etching process must be monitored to ensure the uniformity of the etching process. The interference endpoint method (IEP) is designed to monitor the etching process in real time.
The interference endpoint method (IEP) is to inject an optical signal to the surface of the semiconductor substrate, the incident optical signal carries the information of the thickness change of the substrate film after being transmitted by the semiconductor substrate, the actual etching rate can be obtained by measuring the wavelength of the reflected optical signal and carrying out analysis and calculation according to the measurement result, and the etching process of the substrate film can be monitored in real time. However, in the process of monitoring the spectrum, the optical signal with a specific wavelength emitted after the atoms or molecules in the plasma are excited to an excited state by electrons always exists and has a large intensity, sometimes even the intensity of the optical signal emitted by the plasma exceeds the intensity of the incident optical signal, and the reading of the reflected incident optical signal is interfered, so that the measurement of the incident optical signal becomes difficult.
Disclosure of Invention
In order to solve the above technical problem, the present invention provides a plasma processing apparatus for monitoring a process, comprising a reaction chamber for processing a substrate and a monitoring device for monitoring a substrate processing process, wherein the monitoring device comprises:
an incident light source for emitting incident pulse light to the surface of the substrate in the reaction chamber at a first pulse frequency;
the spectrometer collects the optical signal emitted by the reaction cavity at a second pulse frequency;
the second pulse frequency is more than or equal to 2 times of the first pulse frequency, so that the spectrometer collects at least two groups of optical signals in an incident pulse optical signal period, wherein one group of optical signals comprises the sum of a reflected optical signal of incident light on the surface of the substrate and a background optical signal generated by plasma in the reaction cavity, and one group of optical signals only comprises the background optical signal generated by the plasma in the reaction cavity;
the data processing device is used for operating the optical signal collected by the spectrometer so as to eliminate the influence of a background light signal generated by plasma in the reaction cavity on a reflected light signal;
and the data processing device uses the reflected light signal after eliminating the influence of the background light signal as a calculation basis to obtain the processing end point of the substrate.
Preferably, the second pulse frequency is an nth power of 2 times the first pulse frequency, and n is greater than or equal to 1.
Preferably, the incident light emitted by the incident light source is in a full spectrum.
Preferably, the incident light source is a flash lamp.
Preferably, the pulse period of the pulsed incident light is variable in magnitude.
Preferably, the spectrometer is used for collecting the wavelength and the intensity of an optical signal in the plasma reaction cavity, and the spectrometer is a CCD image controller.
Preferably, the spectrometer transmits a pulse signal to the incident light source to control the period of transmitting the incident light signal by the incident light source.
Further, the present invention also discloses a method for monitoring a plasma processing process, the method being performed in a plasma processing apparatus, the method comprising the steps of:
placing a substrate in a reaction cavity of a plasma processing device, and carrying out plasma process processing on the substrate;
emitting a pulse type incident light signal to the substrate, wherein the incident light signal is reflected on the substrate, and the pulse period frequency of the pulse type incident light signal is a first pulse frequency;
collecting optical signals emitted by the reaction cavity by a spectrometer at a second pulse frequency, wherein the optical signals comprise reflected light signals of incident light on the surface of the substrate and background light signals generated by plasmas in the reaction cavity;
setting the second pulse frequency to be greater than or equal to 2 times of the first pulse frequency;
in a first pulse frequency period, the spectrometer collects the sum of a group of reflected light signals and background light signals generated by plasma and at least one group of background light signals generated only by the plasma;
the spectrometer transmits the acquired optical signal to a data processing device, the data processing device subtracts the sum of the reflected light signal acquired by the spectrometer and the background light signal generated by the plasma from a group of background light signals generated only by the plasma to obtain an undisturbed reflected light signal, and the data processing device calculates the processing end point of the substrate according to the obtained undisturbed reflected light signal.
Preferably, the high level of the reflected light signal collected by the spectrometer is different from the rising edge position of the incident light signal emitted by the incident light source.
Preferably, the frequency of the light signal collected by the spectrometer is twice the pulse frequency of the incident light signal, and in one incident light pulse period, the spectrometer includes two collected light signal periods, wherein the sum of the reflected light signal and the background light signal generated by the plasma is collected in the first period, only the background light signal generated by the plasma is collected in the second period, and the interference of the background light signal on the reflected light signal can be eliminated by subtracting the light signal collected in the first period from the light signal collected in the second period.
Preferably, when the frequency of the light signal collected by the spectrometer exceeds twice the pulse frequency of the incident light signal, in an incident light pulse period, the spectrometer collects a plurality of groups of background light signals only generated by the plasma, and the data processing device selects one group of background light signals and the sum of the reflected light signal collected by the spectrometer and the background light signal generated by the plasma for subtraction, so as to eliminate the interference of the background light signal on the reflected light signal.
Preferably, the incident light signal is a full spectrum signal.
Preferably, the spectrometer selects an optical signal with a certain wavelength for signal acquisition.
Preferably, the incident light source emits a short duration high energy pulse.
Preferably, the data processing device is a computer system.
The invention has the advantages that: an incident light source continuously emitting pulse light is selected as an active light source to emit pulse incident light with a first frequency to the surface of a substrate in a reaction cavity, and the frequency of optical signals collected by a spectrometer in the reaction cavity is set to be more than or equal to twice of the first frequency. The spectrometer collects light signals at least twice in a pulse incident light luminescence period, wherein the sum of the reflected light signal and the background light signal is collected once, the rest is only collected background light signals, and the reflected light signal after interference removal can be obtained by subtracting the collected background light signal from the sum of the collected reflected light signal and the background light signal in each period. The flash lamp which continuously emits the pulse type optical signal is used as the incident light source, so that frequent mechanical switching on and off of the incident light source can be avoided, and mechanical damage to the incident light source is reduced; meanwhile, the time for emitting the incident light in each pulse period of the flash lamp is shorter than the time for emitting the incident light in one period of the incident light source controlled by the mechanical switch, so that the effective light emitting time of the incident light source can be prolonged, and the service life of the incident light source is prolonged. In addition, the invention adopts the flash lamp as the incident light source, can provide the incident light of the full spectrum, the incident light of the full spectrum can let users of the plasma processing device have more wavelength ranges to choose. Meanwhile, the flash lamp can emit high-energy optical signals with short duration according to a certain period, the intensity of reflected optical signals received by the spectrometer can be ensured to be large enough, meanwhile, the duration light-emitting time of the incident light source is short, the service life of the light source can be prolonged, the time of integrating the acquired optical signals by the spectrometer is reduced, and the operation efficiency is improved. The optical signal collected by the spectrometer can be processed and operated in real time, so that the accuracy and the efficiency are improved.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 shows a schematic view of a plasma processing apparatus provided with an interferometric endpoint monitoring device;
FIG. 2 shows a graph of operating pulse signals for an incident light source and a spectrometer;
FIG. 3 shows a schematic view of another plasma processing apparatus configured with an interferometric endpoint monitoring device.
Detailed Description
In order to make the contents of the present invention more comprehensible, the present invention is further described below with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention. It should be noted that the drawings are in a simplified form and are not to precise scale, and are only used for conveniently and clearly achieving the purpose of assisting in describing the embodiment.
FIG. 1 shows a schematic diagram of a plasma processing apparatus configured with an interferometric endpoint monitoring device. In fig. 1, a semiconductor substrate 10 is placed inside a plasma processing apparatus 100, and a reaction gas introduced into a reaction chamber of the plasma processing apparatus 100 is dissociated into a plasma 111 under the action of radio frequency power applied to the plasma processing apparatus 100, and the substrate 10 is etched by the plasma. The substrate 10 typically includes several layers of films to be etched, and different reactive gases and etching process parameters are required for etching different films. The reaction products of the plasma can emit light signals with different wavelengths in the process of etching different films, and the light signals are used as background light signals and continuously exist in the etching process.
In the disclosed apparatus and method for monitoring a plasma processing process using an interferometric endpoint method (IEP), an interferometric endpoint monitoring device is provided for endpoint monitoring of the plasma processing apparatus 100. The interference endpoint monitoring device comprises an incident light source 102 and a spectrometer 104, wherein an optical signal inlet and outlet 103 is arranged on the top wall of the plasma processing device 100 and is used for allowing an optical signal emitted by the incident light source 102 to enter the plasma processing device and enter the surface of a substrate, and allowing a reflected optical signal to enter the spectrometer 104 arranged outside the plasma processing device 100. The specific working principle is as follows: after the incident light source 102 emits an incident light signal to the surface of the etched film, the light reflected by the upper surface of the film interferes with the light reflected by the lower material after penetrating the film. Because the thickness of the film determines the optical path difference of two mutually interfered lights, different optical path differences can form alternately-alternated interference fringes. Therefore, as the etching process is carried out, the thin film is continuously etched and thinned, and under the condition that the delta d meets the following formula, the interference enhancement can be obtained:
Δd＝λ/2n
where λ is the wavelength of the incident optical signal, n is the refractive index of the film material, and Δ d is the change in the thickness of the film being monitored, each time a Δ d change occurs, a maximum of the optical intensity is shown on the spectrometer 104. Thus, as the thickness of the film is reduced, a plurality of sine wave-shaped signal curves are formed. On the premise that the wavelength and the refractive index of an incident light signal are known, the thickness change delta d of the monitored film can be calculated, a period for enhancing interference can be obtained according to a sine wave signal curve received by a spectrometer, and the actual etching rate in the etching process can be calculated by utilizing the thickness change delta d of the monitored film and the period for generating the thickness change. The time required to reach the end point of the etch can be calculated given the known overall thickness of the etched film.
In the monitoring process, because the intensity of the background light signal emitted by the plasma in the reaction cavity is high, sometimes even exceeds the intensity of the light signal reflected by the incident light on the substrate film, because both the incident light and the background light signal are full-spectrum light signals, when the spectrometer is set to collect the light signal with a certain wavelength, the light signal collected by the spectrometer is the sum of the reflected light signal with the wavelength and the background light signal, the etching rate cannot be calculated as described above, in order to avoid the influence of the background light signal emitted by the plasma when the spectrometer receives the reflected light signal of the substrate film, the spectrometer can be ensured to accurately read the incident light signal, and the invention needs to eliminate the interference of the background light signal.
Fig. 2 shows graphs of operating pulse signals of the incident light source and the spectrometer, wherein the first graph shows a graph of light intensity of the reflected light signal and the background light signal emitted from the plasma reaction chamber according to the present invention, and the second graph shows a graph of pulse period of the spectrometer 104 collecting the light signal in the reaction chamber. The present invention selects the incident light source 102 as a light source emitting a high-energy light pulse with a short duration, such as a flash lamp with a full spectrum, and the flash lamp emits light in each pulse period for a very short time, usually in the order of microseconds, so in the first graph, because the duration of the reflected light signal in each period is very short, the instantaneous light signal can be emitted at a time point approximately, and therefore, the intensity of the reflected light signal in each period is represented as a vertical line segment with a certain interval, the length of the vertical line segment represents the intensity of the pulse reflected light signal, and the interval of the two line segments represents the period of the pulse incident light signal. The background light signal emitted by the plasma is always present during the whole plasma process, the light intensity variation range is small, and the light intensity variation range is represented as a smooth curve which is approximately horizontal. For convenience of description, the pulse frequency of the incident light source is referred to as a first pulse frequency, and during each pulse period of the incident light source, the reflected light signal exists in the reaction chamber for a very short time, and only the background light signal exists in the reaction chamber for the rest of the period. The second graph in fig. 2 shows a schematic pulse cycle diagram of the spectrometer collecting the optical signal in the reaction chamber, and when the pulse signal is at a high level, the spectrometer collects the optical signal in the reaction chamber and transmits the collected optical signal to the data processing device 114 for data operation. For convenience of description, the frequency at which the spectrometer collects the optical signal is referred to as the second pulse frequency. For the purpose of the present invention, the second pulse frequency is two times or more the first pulse frequency, that is, in one incident light pulse period, the spectrometer 104 performs at least two signal acquisitions on the optical signal in the reaction chamber, where the optical signal acquired at one time includes the sum of the reflected light signal and the background light signal, and the optical signal acquired at the other time is only the background light signal. The spectrometer transmits the intensity of the collected light signal to a data processing device 114 connected with the spectrometer, and the data processing device 114 calculates the difference between the sum of the reflected light signal and the background light signal collected by the spectrometer in each incident light period and the background light signal, so as to obtain the intensity of the reflected light signal reflected by the incident light on the substrate in each incident light period. So as to eliminate the influence of the background light signal on the calculation of the etching rate of the substrate.
In the present invention, the incident light source 102 is connected to a device 112 for controlling the light emitting frequency of the incident light source, such as the pulse trigger device 112, the pulse trigger device 112 can control the pulse frequency of the incident light source, and the period of the incident light signal emitted by the pulse incident light source 102 according to the present invention can be set in various ways, for example, the flash lamp adopted in the present invention can periodically emit the incident light signal, and in order to adjust the period of the incident light signal more flexibly, as shown in fig. 3, the spectrometer 104 transmits a pulse signal to trigger the light emitting period of the incident light source while collecting the optical signal in the reaction chamber. In the embodiment shown in fig. 3, the light emitting frequency of the incident light source and the frequency of the collected light signal are both controlled by the spectrometer 104, so that the spectrometer 104 can more accurately control the light signal in the reaction chamber to be collected at least twice in one incident light pulse period.
In the invention, the collection frequency of the spectrometer is at least 2 times of the incident light period frequency, so that the sum of the reflected light signal and the background light signal can be collected in one incident light period, and the light intensity of the reflected light-free signal and only the background light signal can be collected. Fig. 2 shows a case when the collection frequency of the spectrometer is exactly 2 times of the incident light period frequency, in another embodiment, the collection frequency of the spectrometer may be 2 n times of the incident light period frequency, at this time, the spectrometer may collect more than one set of light intensities only of the background light signal in one incident light pulse period, and the sum of the collected background light signal intensity and the light intensity of the reflected light signal collected by the spectrometer and the background light signal intensity is selected to perform subtraction operation, so as to obtain the light intensity of the reflected light signal. In order to avoid unstable signal acquisition when the high level of the optical signal collected by the spectrometer is at a rising edge, since the incident optical signal is nearly a transient pulse at a point in time, it is preferable that the incident optical signal and the high level of the optical signal collected by the spectrometer have different rising edges.
Compared with the mode that the incident light source is periodically switched on and off so that the spectrometer acquires the pulse type reflected light signal, the pulse type reflected light signal acquisition device adopts the flash lamp which continuously emits the pulse type light signal as the incident light source, so that frequent mechanical switching on and off of the incident light source can be avoided, and the mechanical damage of the incident light source is reduced; meanwhile, the time for emitting the incident light in each pulse period of the flash lamp is shorter than the time for emitting the incident light in one period of the incident light source controlled by the mechanical switch, so that the effective light emitting time of the incident light source can be prolonged, and the service life of the incident light source is prolonged. In addition, the invention adopts the flash lamp as the incident light source, can provide the incident light of the full spectrum, the incident light of the full spectrum can let users of the plasma processing device have more wavelength ranges to choose. Meanwhile, the flash lamp can emit high-energy optical signals with short duration according to a certain period, the intensity of reflected optical signals received by the spectrometer can be ensured to be large enough, meanwhile, the duration light-emitting time of the incident light source is short, the service life of the light source can be prolonged, the time of integrating the acquired optical signals by the spectrometer is reduced, and the operation efficiency is improved. The optical signal collected by the spectrometer can be processed and operated in real time, so that the accuracy and the efficiency are improved.
The spectrometer 104 transmits the sum of the light intensity of the reflected light signal and the light intensity of the background light signal collected in each period of the incident light signal and the intensity of the background light signal to the data processing device connected with the spectrometer, and the data processing device 114 performs subtraction operation on the sum of the light intensity of the reflected light signal and the light intensity of the background light signal to obtain the reflected light signal of the incident light source 102 reflected on the substrate film. By setting the incident light source to continuously emit the pulse type incident light signal, the background light signal can be removed, only the reflected light signal on the substrate film which is useful for monitoring the etching process is left, and the actual etching rate of the substrate film in the plasma processing device can be obtained by reading the wavelength of the reflected light signal and calculating according to the formula described above, so that the etching process progress of the substrate film can be accurately monitored. The data processing device is a computer system.
The period of the pulse incident light source 102 emitting the incident light signal can be set in various ways, for example, the flash lamp adopted in the present invention can periodically emit the incident light signal, and in order to adjust the period of the incident light signal more flexibly, as shown in fig. 3, the spectrometer 104 transmits a pulse signal to trigger the light emitting period of the incident light source. Triggering the incident light source 102 in the manner shown in fig. 3 can effectively control the relationship between the period of the reflected light signal and the period of the light signal collected by the spectrometer, so as to realize accurate collection of the light signal by the spectrometer.
The IEP of the present invention can monitor not only the etching process but also the deposition process, and unlike the etching process, the deposition process is a process in which the thickness of the thin film is continuously increased, and the deposition rate of the deposition process can be calculated by projecting an incident light signal into the deposition reaction chamber according to the above description, and when the end point of the deposition process can be accurately known according to the accurate deposition rate and the thickness of the thin film to be deposited.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications without departing from the spirit and scope of the present invention.
Claims (13)
1. A plasma processing apparatus for monitoring a process, comprising a chamber for processing a substrate and a monitoring device for monitoring the process, the monitoring device comprising:
the flash lamp emits incident pulse light to the surface of the substrate in the reaction cavity at a first pulse frequency;
the spectrometer collects the optical signal sent out from the reaction cavity at a second pulse frequency, and transmits a pulse signal to trigger the light emitting period of the incident light source while collecting the optical signal in the reaction cavity;
the second pulse frequency is more than or equal to 2 times of the first pulse frequency, so that the spectrometer collects at least two groups of optical signals in an incident pulse optical signal period, wherein one group of optical signals comprises the sum of a reflected optical signal of incident light on the surface of the substrate and a background optical signal generated by plasma in the reaction cavity, one group of optical signals is only the background optical signal generated by the plasma in the reaction cavity, and the high level of the reflected optical signal collected by the spectrometer is different from the rising edge position of the incident optical signal sent by the incident light source;
the data processing device is used for operating the optical signal collected by the spectrometer so as to eliminate the influence of a background light signal generated by plasma in the reaction cavity on a reflected light signal;
and the data processing device uses the reflected light signal after eliminating the influence of the background light signal as a calculation basis to obtain the processing end point of the substrate.
2. The apparatus of claim 1, wherein: the second pulse frequency is n times of 2 of the first pulse frequency, and n is greater than or equal to 1.
3. The apparatus of claim 1, wherein: the incident light emitted by the incident light source is full spectrum.
4. The apparatus of claim 1, wherein: the pulse period of the pulsed incident light is variable in magnitude.
5. The apparatus of claim 1, wherein the spectrometer is used for collecting the wavelength and intensity of the light signal in the plasma reaction chamber, and the spectrometer is a CCD image controller.
6. The apparatus of claim 1, wherein the spectrometer emits a pulsed signal to the incident light source to control a period during which the incident light source transmits the incident light signal.
7. A method of monitoring a plasma processing process, the method being performed in a plasma processing apparatus, the method comprising:
placing a substrate in a reaction cavity of a plasma processing device, and carrying out plasma process processing on the substrate;
emitting a pulse type incident light signal to the substrate, wherein the incident light signal is reflected on the substrate, and the pulse period frequency of the pulse type incident light signal is a first pulse frequency;
collecting optical signals emitted by the reaction cavity by a spectrometer at a second pulse frequency, wherein the optical signals comprise reflected light signals of incident light on the surface of the substrate and background light signals generated by plasmas in the reaction cavity;
setting the second pulse frequency to be more than or equal to 2 times of the first pulse frequency, wherein the high level of the reflected light signal collected by the spectrometer is different from the rising edge position of the incident light signal emitted by the incident light source;
in a first pulse frequency period, the spectrometer collects the sum of a group of reflected light signals and background light signals generated by plasma and at least one group of background light signals generated only by the plasma;
the spectrometer transmits the acquired optical signal to a data processing device, the data processing device subtracts the sum of the reflected light signal acquired by the spectrometer and the background light signal generated by the plasma from a group of background light signals generated only by the plasma to obtain an undisturbed reflected light signal, and the data processing device calculates the processing end point of the substrate according to the obtained undisturbed reflected light signal.
8. The method of claim 7, wherein: the frequency of light signals collected by the spectrometer is twice of the pulse frequency of incident light signals, the spectrometer comprises two periods of collected light signals in one period of incident light pulses, wherein the sum of reflected light signals and background light signals generated by plasmas is collected in the first period, only background light signals generated by plasmas are collected in the second period, and the interference of the background light signals on the reflected light signals can be eliminated by subtracting the light signals collected in the first period from the light signals collected in the second period.
9. The method of claim 7, wherein: when the frequency of the light signals collected by the spectrograph exceeds twice of the pulse frequency of the incident light signals, the spectrograph collects a plurality of groups of background light signals only generated by the plasma in one incident light pulse period, and the data processing device selects one group of background light signals and the sum of the reflected light signals collected by the spectrograph and the background light signals generated by the plasma to subtract so as to eliminate the interference of the background light signals on the reflected light signals.
10. The method of claim 7, wherein: the incident light signal is a full spectrum signal.
11. The method of claim 7, wherein the spectrometer selects a wavelength of the optical signal for signal acquisition.
12. The method of claim 7, wherein: the incident light source emits a short duration high energy pulse.
13. The method of claim 7, wherein: the data processing device is a computer system.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610487977.XA CN107546141B (en) | 2016-06-28 | 2016-06-28 | Apparatus and method for monitoring plasma process |
| TW106108413A TWI633575B (en) | 2016-06-28 | 2017-03-14 | Plasma processing device for monitoring technology process and monitoring plasma treatment Technical process approach |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610487977.XA CN107546141B (en) | 2016-06-28 | 2016-06-28 | Apparatus and method for monitoring plasma process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107546141A CN107546141A (en) | 2018-01-05 |
| CN107546141B true CN107546141B (en) | 2020-12-04 |
Family
ID=60962040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610487977.XA Active CN107546141B (en) | 2016-06-28 | 2016-06-28 | Apparatus and method for monitoring plasma process |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107546141B (en) |
| TW (1) | TWI633575B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1377457A (en) * | 1999-09-30 | 2002-10-30 | 拉姆研究公司 | Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| CN103943447A (en) * | 2013-01-17 | 2014-07-23 | 中微半导体设备(上海)有限公司 | Plasma processing device and processing method thereof |
| CN104733279A (en) * | 2013-12-23 | 2015-06-24 | 中微半导体设备(上海)有限公司 | Plasma etching system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6905624B2 (en) * | 2003-07-07 | 2005-06-14 | Applied Materials, Inc. | Interferometric endpoint detection in a substrate etching process |
| KR100932574B1 (en) * | 2006-10-30 | 2009-12-17 | 어플라이드 머티어리얼스, 인코포레이티드 | Endpoint detection for photomask etching |
| US8009938B2 (en) * | 2008-02-29 | 2011-08-30 | Applied Materials, Inc. | Advanced process sensing and control using near infrared spectral reflectometry |
| CN103346116B (en) * | 2008-10-07 | 2016-01-13 | 应用材料公司 | For effectively removing the equipment of halogen residues from etching substrates |
| CN104733336B (en) * | 2013-12-19 | 2017-11-03 | 中微半导体设备(上海)有限公司 | The end-point detecting system and method for removing of photoresist by plasma technique |
-
2016
- 2016-06-28 CN CN201610487977.XA patent/CN107546141B/en active Active
-
2017
- 2017-03-14 TW TW106108413A patent/TWI633575B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1377457A (en) * | 1999-09-30 | 2002-10-30 | 拉姆研究公司 | Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| CN103943447A (en) * | 2013-01-17 | 2014-07-23 | 中微半导体设备(上海)有限公司 | Plasma processing device and processing method thereof |
| CN104733279A (en) * | 2013-12-23 | 2015-06-24 | 中微半导体设备(上海)有限公司 | Plasma etching system |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201801128A (en) | 2018-01-01 |
| TWI633575B (en) | 2018-08-21 |
| CN107546141A (en) | 2018-01-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102023444B1 (en) | The plasma processing apparatus and plasma processing method | |
| JP6033453B2 (en) | Plasma endpoint detection using multivariate analysis | |
| US10665516B2 (en) | Etching method and plasma processing apparatus | |
| US11056322B2 (en) | Method and apparatus for determining process rate | |
| KR100567481B1 (en) | Plasma etching termination detecting method | |
| US20170084433A1 (en) | Plasma etching systems and methods using empirical mode decomposition | |
| KR20150015600A (en) | Plasma Process Diagnosing Apparatus Having Multi-OES Sensor And Detecting Method Of Using The Same | |
| EP1700333A1 (en) | Method and apparatus for seasoning semiconductor apparatus of sensing plasma equipment | |
| TW201318061A (en) | Method for dynamically detecting etched end point | |
| US9059038B2 (en) | System for in-situ film stack measurement during etching and etch control method | |
| JPH11260799A (en) | Fine working method of thin film | |
| CN107546141B (en) | Apparatus and method for monitoring plasma process | |
| JP5778893B2 (en) | End point detection apparatus, plasma processing apparatus, and end point detection method | |
| CN106876238B (en) | Apparatus and method for monitoring plasma process | |
| KR20140049491A (en) | Differential measurements for endpoint signal enhancement | |
| TWI640031B (en) | Plasma processing device and method for monitoring plasma process | |
| CN113302722B (en) | Plasma processing method and wavelength selection method used in plasma processing | |
| US7122096B2 (en) | Method and apparatus for processing semiconductor | |
| US11875978B2 (en) | Plasma processing apparatus and plasma processing method | |
| JPH11238723A (en) | Method and apparatus for plasma processing | |
| TW202347547A (en) | Endpoint detection in low open area and/or high aspect ratio etch applications | |
| KR20240016345A (en) | In situ sensors and logic for process control | |
| JPH04338663A (en) | Measuring equipment for plasma | |
| KR100854082B1 (en) | Plasma etching apparatus and method for seasoning using the same | |
| KR100733120B1 (en) | Method and apparatus for detecting processing of semiconductor waper |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |