CN107539943A - The hybrid package structure and its method for packing of mems chip and IC chip - Google Patents

The hybrid package structure and its method for packing of mems chip and IC chip Download PDF

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Publication number
CN107539943A
CN107539943A CN201610466655.7A CN201610466655A CN107539943A CN 107539943 A CN107539943 A CN 107539943A CN 201610466655 A CN201610466655 A CN 201610466655A CN 107539943 A CN107539943 A CN 107539943A
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CN
China
Prior art keywords
upper substrate
chip
ic chip
mems
infrabasal plate
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CN201610466655.7A
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Chinese (zh)
Inventor
黄卫东
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黄卫东
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Priority to CN201610466655.7A priority Critical patent/CN107539943A/en
Publication of CN107539943A publication Critical patent/CN107539943A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid

Abstract

The invention discloses the hybrid package structure of a kind of mems chip and IC chip, including mems chip, IC chip, upper substrate, infrabasal plate and the plastic packaging glue being arranged between upper substrate and infrabasal plate, mems chip, IC chip electrically connect with being formed between upper substrate and/or infrabasal plate, formed and electrically connected between upper substrate and infrabasal plate, at least one window for penetrating upper substrate is outputed on upper substrate, one or more mems chips and/or IC chip are positioned at the window of upper substrate, lower substrate surface and/or upper substrate surface.This programme encapsulating structure integrated level is higher, while window structure reduces encapsulation integral thickness, decreases the dosage of filler, therefore reduces cost;Can be with integrated pressure sensor chip;With universality, suitable for all kinds of micro electronmechanical integration packagings;Technique easily realizes that product quality is fully ensured that and encapsulated is higher than 99% by technological ability measuring and calculating yields.

Description

The hybrid package structure and its method for packing of mems chip and IC chip

Technical field

The invention belongs to chip package field, and in particular to a kind of hybrid package of mems chip and IC chip Structure and its method for packing.

Background technology

Integrated circuit (IC) chip is a kind of novel semi-conductor device to grow up later stage the 1950s to the sixties Part.It is through semiconductor fabrication process such as peroxidating, photoetching, diffusion, extension, evaporations of aluminum, circuit of the composition with certain function The elements such as required transistor, resistance, electric capacity and the connecting wire between them are fully integrated on a fritter silicon chip surface, so Silicon chip surface circuit is electrically connected and is encapsulated with outside foundation afterwards.

Integrated antenna package, it is the process that integrated circuit assembling is chip final products, exactly Foundry is produced The integrated circuit die (Die) come is placed on one piece of substrate for playing carrying effect, and pin is extracted, and then fixation is encapsulated as For an entirety.Fig. 1 is a kind of encapsulating structure, and chip circuit is guided into outside, copper pin and chip surface electricity by copper pin Road is connected with wire bonding.

MEMS (MEMS, Micro-Electro-Mechanical System), also referred to as mems System, micro electronmechanical, micromechanics etc., grow up on the basis of microelectric technique (semiconductor fabrication), merged photoetching, The high-tech electronic mechanical device of the fabrication techniques such as burn into film, LIGA, silicon micromachined, non-silicon micromachined and precision optical machinery processing Part, it is that mechanical mechanism, output are formed in chip to the microsensor product of extraneous induced signal, and its core is Micro electronmechanical (MEMS) chip.As IC chip, micro electronmechanical (MEMS) chip is also required to encapsulate.As shown in Fig. 2 it is The encapsulating structure of MEMS pressure sensor.

MEMS (MEMS) is currently widely used in the fields such as Internet of Things, wearable product and intelligent artifact. It is exactly the various productions being the theme with micro electronmechanical (MEMS) application that our times integrated circuit (IC) technology, which develops most significant trend, Product will enter the growth outbreak period, and the market demand of various application directions is very powerful.But currently sensed in the world for MEMS The scheme that chip integrates with IC chip, which remains in, is integrated in MEMS chip and IC chip in one plastic-sealed body, such mould Block integrated level is very low, and can not be integrated in the most frequently used pressure sensing chip.So far, there is not one in the world Company releases the integration packaging scheme for MEMS sensing modules with universality, and the application of micro electronmechanical product is therefore by freight weight limit Stagnate again.

MEMS sensor is by its small volume, cost is low and can be integrated with other intelligent chips huge excellent Gesture, by as the main production technology and application form of sensor.Consumer electronics, automotive electronics, medical services are MEMS sensings The main application market of device, from now on MEMS application field will gradually expand, including rise wearable device, Internet of Things Net and and people live closely bound up smart home and intelligent city is all the very big application field of potentiality.And these are new The essential core framework that emerging field needs is by low-power consumption MCU, eNVM, Analog&PM IC, and is wirelessly subject to being connected chip Integration, various sensor chips are reconnected, therefore the solution for providing chip and sensor integration integration will with processing procedure realization Significant, development space is very big.

From the angle analysis of technology, wire bonding is still most general most economical chip connected mode.Although wafer level Encapsulation (WLP) and silicon perforation (TSV) have been considered to be incorporated into MEMS encapsulation, but its high cost, poor integrated Before feasibility, relatively low yield and reliability cause its application deterioration not.It fact proved, ripe sane Wire Bonding Technology is It is the integrated feasible connected mode of MEMS sensings.

The scheme currently integrated in the world for MEMS sensing chips with IC chip is remained in MEMS chip and IC For integrated chip in a plastic-sealed body, such module integrated level is very low, and can not be by the most frequently used pressure sensing chip collection Into wherein.Encapsulating structure as shown in Figure 3, Figure 4 is that the current product structure of the axle sensor integration module of inertia nine (is integrated with ASIC/MCU chips, gyroscope chip, acceleration sensor chip and magnetic sensor chip), and in the world at first at present The MEMS integrated products entered, the three-dimensional stacked mode of chip is employed, but its integrated level is still low and is unable to integrated pressure sensing Device.The characteristics of integrated products module is:Integrated level is relatively low (being integrated with 3 MEMS chips and 1 IC chip);Pressure can not be integrated Force snesor;Inertia sensing application is only limited to, without universality;Technique is difficult to realize, yield is relatively low (to be less than 95% even more It is low).

There is an urgent need to release the MEMS sensing modules with high integration, namely MEMS chip and ASIC/MCU for existing market The highly integrated package module of chip or other chips is, it is necessary to which multiple IC chips are mixed with multiple mems chips It is encapsulated in a module.The core architecture that especially Internet of Things and wearable device need, i.e., by MCU, eNVM of low-power consumption, Analog&PM chips, wireless RF are integrated with being connected chip and all kinds of MEMS sensor chips, develop integrated sensing mould The new product framework and integrated technique of block, and realize commercialization.Market it is desirable that using traditional approach three-dimension packaging just Achievable module integrates, and its cost is low but added value of product is high.

The content of the invention

The technical problems to be solved by the invention are:A kind of hybrid package of mems chip and IC chip is provided Structure and its method for packing, solve that mems chip in the prior art is low with IC chip integrated level, technique is difficult to reality Now, the problem of yield is relatively low.

The present invention uses following technical scheme to solve above-mentioned technical problem:

The hybrid package structure of mems chip and IC chip, including mems chip, IC chip, on Substrate, infrabasal plate and the plastic packaging glue being arranged between upper substrate and infrabasal plate, mems chip, IC chip and upper base Electrical connection is formed between plate and/or infrabasal plate, is formed and electrically connected between upper substrate and infrabasal plate, outputed on upper substrate at least one Penetrate the window of upper substrate, one or more mems chips and/or IC chip are positioned at the window of upper substrate, under Substrate surface and/or upper substrate surface.

Further, the upper substrate is upper strata circuit substrate, and infrabasal plate is lower circuit substrate, wherein,

Mems chip or IC chip, referred to as infrabasal plate upper die, lower base are placed on the upper surface of infrabasal plate The active surface of the circuit on mems chip, IC chip above plate is by being electrically connected to the surface of infrabasal plate;

The top of infrabasal plate sets plastic packaging glue, described to mould sealant covers infrabasal plate upper die, electronic component and be electrically connected Binding structure;

The lower surface of upper substrate fits in the top of plastic packaging glue, and the gap between the lower surface of upper substrate and plastic packaging glue is set Filler;

Plastic packaging glue and filler are arranged through between the lower surface of upper substrate and the upper surface of infrabasal plate and with electrically connecting Through hole, conductive material inside through hole;

The window is penetrated to plastic packaging glue surface, and mems chip or integrated electricity are placed in the plastic packaging glue surface in window Road chip, chip referred to as in window, the circuit on mems chip, the active surface of IC chip in window pass through electricity It is connected to the surface of upper substrate.

The oriented recessed structure sunk or raised up of plastic packaging glue, is referred to as recessed heavy window and raised window in the window Mouthful.

Circuit protection device is set around the mems chip, IC chip.

The circuit protection device is that protectiveness covers colloid or plastic packaging glue.

The upper substrate top sets sealing device.

At least one pre-plastic package cavity is set above upper substrate.

The mems chip or IC chip can stack placement.

Complementary substrate is placed on plastic packaging glue surface in window first, then places microcomputer in the upper surface of complementary substrate Electrical chip.

Infrabasal plate lower surface and can be formed and be electrically connected with the printed circuit board (PCB) or packaging body or power interconnection that are disposed below Connect.

The upper substrate uses metal frame substrate.

The metal frame substrate is referred to as metal frame substrate plastic packaging glue by plastic packaging glue plastic packaging, the plastic packaging glue.

The filler is metal frame substrate plastic packaging glue.

At least one electronic component of formed electrical connection is set on the upper surface of the upper substrate and/or infrabasal plate Or its packaging body.

A kind of method for packing of the hybrid package structure of mems chip and IC chip, comprises the following steps:

Step 1, carry out on infrabasal plate planting tin ball, IC chip is pasted, sets electrical connection mechanism and is formed and is electrically connected Connect operation;

Step 2, the tin ball on infrabasal plate, IC chip, electrical connection mechanism carry out plastic packaging;

Step 3, the plastic package structure above tin ball carry out laser ablation, and continued above the tin ball after laser ablation Carry out planting tin ball exercise work;

Step 4, the tin ball bonding for obtaining the upper substrate with least one window with step 3, while filled out Fill thing filling;

Step 5, mems chip is placed in window, and operation is electrically connected to mems chip;

Step 6, dispensing is carried out, plus sealing device, form encapsulating structure.

The invention also discloses a kind of mems chip and the method for packing of the hybrid package structure of IC chip, bag Include following steps:

Step 1, carry out on infrabasal plate planting tin ball, IC chip is pasted, sets electrical connection mechanism and is formed and is electrically connected Connect operation;

Step 2, the tin ball on infrabasal plate, IC chip, electrical connection mechanism carry out plastic packaging;

Step 3, the plastic package structure above tin ball carry out laser ablation, and continued above the tin ball after laser ablation Carry out planting tin ball exercise work;

Step 4, the tin ball bonding for obtaining the upper substrate with least one window with step 3, while filled out Fill thing filling;

Step 5, upper substrate top set pre-plastic package cavity;

Step 6, mems chip is placed in window, and operation is electrically connected to mems chip;

Step 7, dispensing is carried out, plus sealing device, form encapsulating structure.

Compared with prior art, the invention has the advantages that:

1st, the encapsulating structure integrated level of this programme is higher;Can be with integrated pressure sensor chip;With universality, it is applied to All kinds of micro electronmechanical integration packagings;Technique easily realizes that yields is higher than 99% by technological ability measuring and calculating.

2nd, this programme proposes the window structure of upper substrate windowing, and allows have multiple windows.Part plastic packaging glue surface It is exposed in the window's position, mems chip or IC chip are affixed directly to the plastic packaging glue surface in exposed window On, it is such the advantages of be reduce encapsulation integral thickness, reduce the dosage of filler, therefore reduce cost.

3rd, the present invention can be by MCU, eNVM, Analog&PM chip of low-power consumption, wireless RF with being connected chip and all kinds of MEMS sensor chip is integrated, and develops the new product framework and integrated technique of integrated sensing module, easily realizes production Product.

4th, this product structure is novel, technique is unique, and mould is achieved that using the three-dimension packaging of traditional wire bonding mode Block integrates, and its cost is low but added value of product is high.

5th, the integrated products launch that all kinds of MEMS sensors produce personalization, commercialization of the invention can be directed to Application direction can be concentrated on such as applied to the multi-shaft inertial sensor-based system integrated products of intelligence machine and wearable product, application In sensing integrated products, the air pressure and altitude applied to smart mobile phone and wearable product of the TPMS tire pressure monitoring systems of automobile Count product and miniature sphygmomanometer etc..

Brief description of the drawings

Fig. 1 is a kind of encapsulating structure of integrated circuit in the prior art.

Fig. 2 is the typical package structure of MEMS pressure sensor in the prior art.

Fig. 3 is the LGA package structure of the axle sensor integration module of inertia nine in the prior art.

Fig. 4 is the QFN encapsulating structures of the axle sensor integration module of inertia nine in the prior art.

Fig. 5 is the encapsulating structure that upper substrate of the present invention sets a window.

Fig. 6 is the encapsulating structure that upper substrate of the present invention sets two windows.

Fig. 7 is that upper substrate of the present invention sets a recessed heavy window and the encapsulating structure of an embossed window.

Fig. 8 is upper substrate of the present invention, infrabasal plate is respectively provided with IC chip and upper substrate sets the encapsulation of a window Structure.

Fig. 9 is the encapsulating structure that upper substrate top of the present invention sets a pre-plastic package cavity and sealing device.

Figure 10 a are the encapsulating structure that upper substrate top of the present invention sets two pre-plastic package cavitys and sealing device.

Figure 10 b are the encapsulating structure that upper substrate top of the present invention sets chip, a pre-plastic package cavity and sealing device.

Figure 11 is the encapsulating structure that protectiveness rubber cover is set in upper substrate top pre-plastic package cavity of the present invention.

Figure 12 is the encapsulating structure that upper substrate top of the present invention sets protectiveness rubber cover and sealing device.

Figure 13 is the encapsulating structure that plastic packaging glue top sets complementary substrate in window of the present invention.

Figure 14 is the encapsulating structure that upper substrate of the present invention uses metal frame substrate.

Figure 15 is the encapsulating structure that filler of the present invention uses metal frame substrate plastic packaging glue.

Figure 16 is the encapsulating structure of upper substrate surface mount electronic component package body of the present invention.

Figure 17 is the flow chart of method for packing of the present invention.

Wherein, the mark in figure is as follows:1- upper substrates;2- infrabasal plates;3-MEMS chips;4-IC chips;5- leads;6- leads to Hole;7- plastic packaging glue;8- fillers;9- windows;The recessed heavy windows of 10-;11- embossed windows;12- pre-plastic package cavitys;13- cover plates;14- Protectiveness rubber cover;The complementary substrates of 15-;16- metal frame substrate plastic packaging glue;17- metal frame substrates;18- cofferdam glue; 19- electronic component packaging bodies.

Embodiment

This programme is proposed the double-deck overlay model of MEMS module product configurations, is formed in a module bilevel The laminated construction of all kinds of chips and MEMS, upper strata with MEMS chip it is integrated based on, lower floor with IC chip it is integrated based on, upper and lower two layers Between connected with brazing metal and ensure circuit signal connection, module takes the mode of a plastic packaging and a pre-plastic package to be molded, because This process aspect also has strategic structural to realize the scientific and normal controllable of manufacturing process.

This programme proposes the window structure of upper substrate windowing, and allows have multiple windows.Part plastic packaging glue surface exists The window's position is exposed, and mems chip or IC chip are affixed directly to the plastic packaging glue surface in exposed window On, it is such the advantages of be reduce encapsulation integral thickness, reduce the dosage of filler, therefore reduce cost.

Through hole, compared with similar POP (Package On Package) encapsulation, the through hole in this product is mainly used in connecing The signal of logical micro-electro-mechanical sensors, therefore number of openings is less, clear size of opening can be made larger, and thus greatly strengthen can Manufacturing, it ensure that the quality and stability of product.It should be noted that the conductive material in through hole in the present invention is unlimited In brazing metal, no matter with which kind of mode, electrically connected as long as forming between upper and lower base plate at least one, just belong to power of the present invention The scope of profit protection.

The present invention will provide a kind of new core architecture for Internet of Things and wearable device, i.e., by the MCU of low-power consumption, ENVM, Analog&PM chip, wireless RF are integrated with being connected chip and all kinds of MEMS sensor chips, are developed integrated The new product framework and integrated technique of sensing module, easily realizes commercialization.This product structure is novel, technique is unique, uses The three-dimension packaging of traditional wire bonding mode achieves that module integrates, and its cost is low but added value of product is high.The present invention It is a kind of innovative three-dimension packaging scheme with universality, for integrated MEMS sensing module.The program is safe feasible, system Journey and simple and reliable process, it is easy to realize the integrated commercialization of MEMS sensing modules.All kinds of MEMS sensor systems can be directed to Produce personalization integrated products launch, the commercialization application direction of the invention paid close attention at present will focus on such as applied to The multi-shaft inertial sensor-based system integrated products of intelligence machine and wearable product, the TPMS tire pressure monitoring systems applied to automobile Sense integrated products, the air pressure and altitude meter product applied to smart mobile phone and wearable product and miniature sphygmomanometer etc..

The structure and the course of work of the present invention are described further below in conjunction with the accompanying drawings.

The hybrid package structure of mems chip and IC chip, including mems chip 3, IC chip 4, Upper substrate 1, infrabasal plate 2 and the molding compounds 7 being arranged between upper substrate 1 and infrabasal plate 2, upper substrate 1 are upper strata circuit Substrate, infrabasal plate 2 are lower circuit substrate, place mems chip 3 or IC chip 4 on the upper surface of infrabasal plate 2, claim For infrabasal plate upper die, circuit, the active surface of IC chip 4 on the mems chip 3 of the top of infrabasal plate 2 pass through It is electrically connected to the surface of infrabasal plate 2.

One or more mems chips and/or IC chip are placed at the window 9 of upper substrate, infrabasal plate table Face and/or upper substrate surface, to be preferred at the window for being positioned over upper substrate, upper substrate surface can also select mems chip Not chip placement (thus expand window area area) and increase the chip placement space at window.

Molding compounds, by molding compounds, often habituation is referred to as plastic packaging glue to those skilled in the art, therefore, in this programme Described molding compounds and plastic packaging glue are two kinds of different expression forms for belonging to same things, and the plastic packaging glue 7 coats The upper surface portion of whole infrabasal plate, infrabasal plate upper die, above infrabasal plate electronic component and with infrabasal plate upper surface shape Into electrical connection.

The upper substrate fits in the top of the plastic packaging glue, has in the gap between the upper substrate and the plastic packaging glue Filler 8 (such as epoxy flux or other can play the material of phase same-action), the filler must possess scaling powder Function is firmly bonded again simultaneously.

Connected between the mems chip 3, IC chip 4 and upper substrate 1, infrabasal plate 2 by lead 5, upper base Connected between plate and infrabasal plate by conductive through hole 6.

Have between the upper surface of through hole, the lower surface of the upper substrate and the infrabasal plate through plastic packaging glue 7 and filler 8 And the through hole 6 of through connection upper and lower base plate, the conductive material in the inside of through hole 6, upper substrate lower surface and infrabasal plate upper surface it Between by conductive material and formed electrical connection.

At least one window for penetrating upper substrate, one or more mems chips and/or integrated electricity are outputed on upper substrate Road chip is positioned at the window of upper substrate, lower substrate surface and/or upper substrate surface.

Window, empty window is worn in not having with the region of conductive material contacts for the upper substrate, the window above plastic packaging glue Mouth region domain non-filler, thus upper substrate does not cover all plastic packaging glue, but by part plastic packaging glue surface in the window's position It is exposed.The oriented recessed structure sunk or raised up of plastic packaging glue, is referred to as recessed heavy window 10 and projection in the window Window 11, and the deformation design of various recessed heavy windows 10 or embossed window 11 is formed, including recessed heavy window 10 is by infrabasal plate The situation that square chip is exposed.

Complementary substrate 15 is placed on plastic packaging glue surface in window first, then is put in the upper surface of the complementary substrate 15 Mems chip is put to reduce influence of the encapsulation stress to sensing measurement result.

Mems chip or IC chip are arranged in exposed window on plastic packaging glue surface, referred to as window inner core Piece, the circuit of chip or active surface are electrically connected to the surface of upper substrate in the window.

Mems chip or IC chip are arranged on upper substrate upper surface, referred to as upper substrate surface chip, institute The circuit or active surface for stating upper substrate surface chip are electrically connected to upper substrate surface.

At least one electronic component of formed electrical connection is set on the upper surface of the upper substrate and/or infrabasal plate Or its packaging body.

Mems chip or IC chip can be arranged at plastic packaging glue surface in window by way of stickup.

The electrical connection of chip and upper and lower substrate can be the mode or other modes (such as flip chip bonding of wire bonding Connect).

Specific embodiment one,

As shown in figure 5, the hybrid package structure of mems chip and IC chip, including it is mems chip, integrated Circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, set on the infrabasal plate Put 4 IC chips, formed between 4 IC chips and by lead and be electrically connected between the upper surface of infrabasal plate Connect;One window is set on upper substrate, 3 mems chips are set in window, between 3 mems chips and and upper substrate Between pass through lead formed electrical connection;Epoxy flux packing material is set between upper substrate and molding compounds;Upper substrate with Realized and electrically connected by conductive through hole between infrabasal plate.

The present embodiment only illustrates by taking 4 IC chips and 3 mems chips as an example, but is not limited to these cores Piece, multiple different chips can be set according to different user's requests, and can be configured to different combinations and be configured.

Specific embodiment two,

As shown in fig. 6, the hybrid package structure of mems chip and IC chip, including it is mems chip, integrated Circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, set on the infrabasal plate Put 4 IC chips, formed between 4 IC chips and by lead and be electrically connected between the upper surface of infrabasal plate Connect;Two windows of setting on upper substrate, one of window 2 mems chips of interior setting, the interior setting 1 of another window are micro- Electromechanical chip, formed between mems chip and by lead and electrically connected between upper substrate;Upper substrate and molding compounds Between set epoxy flux packing material;Realized and electrically connected by conductive through hole between upper substrate and infrabasal plate.

The present embodiment is not limited to these chips enumerated, can be according to different user's requests in upper and lower substrate and each Multiple different chips are set in window, and can be configured to different combinations and be configured.

Specific embodiment three,

As shown in fig. 7, the hybrid package structure of mems chip and IC chip, including it is mems chip, integrated Circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, set on the infrabasal plate Put 4 IC chips, formed between 4 IC chips and by lead and be electrically connected between the upper surface of infrabasal plate Connect;Two windows are set on upper substrate, and one of window is recessed heavy window, sets 2 mems chips in recessed heavy window, separately One window is embossed window, sets 1 mems chip in embossed window, between mems chip and between upper substrate Formed and electrically connected by lead;Epoxy flux packing material is set between upper substrate and molding compounds;Upper substrate and lower base Realized and electrically connected by conductive through hole between plate.

Specific embodiment four,

As shown in figure 8, the hybrid package structure of mems chip and IC chip, including it is mems chip, integrated Circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, set on the infrabasal plate Put 4 IC chips, formed between 4 IC chips and by lead and be electrically connected between the upper surface of infrabasal plate Connect;One window is set on upper substrate, 2 mems chips are set in window, between mems chip and with upper substrate it Between pass through lead formed electrical connection;2 IC chips, IC chip and upper base are also set up on the upper surface of upper substrate Plate is formed by lead and electrically connected, and epoxy flux packing material is set between upper substrate and molding compounds;Upper substrate is with Realized and electrically connected by conductive through hole between substrate.

Specific embodiment five,

As shown in figure 9, the hybrid package structure of mems chip and IC chip, including it is mems chip, integrated Circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, set on the infrabasal plate Put 4 IC chips, formed between 4 IC chips and by lead and be electrically connected between the upper surface of infrabasal plate Connect;One window is set on upper substrate, 3 mems chips are set in window, between mems chip and with upper substrate it Between pass through lead formed electrical connection;The top of upper substrate builds a pre-plastic package cavity, upper substrate, exposure by preformed adhesive body Window in the inner surface of plastic packaging glue surface and preformed adhesive body form hollow pre-plastic package cavity 12, described pre-plastic package cavity Upward opening, the top of pre-plastic package cavity 12 set sealing device, and sealing device uses the form of cover plate 13, upper base in the embodiment Epoxy flux packing material is set between plate and molding compounds;Electricity is realized by conductive through hole between upper substrate and infrabasal plate Connection.

Specific embodiment six,

As shown in Figure 10 a, the hybrid package structure of mems chip and IC chip, including mems chip, collection Into circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, on the infrabasal plate 4 IC chips are set, electricity is formed by lead between 4 IC chips and between the upper surface of infrabasal plate Connection;Two windows are set on upper substrate, are respectively provided with one or more mems chips in each window, between mems chip And formed and electrically connected by lead between upper substrate;Two integrated electricity are set on the upper substrate upper surface between two windows Road chip, two are electrically connected between IC chip and upper surface by lead formation, the top of two IC chips Circuit protection device is set, and the circuit protection device is plastic packaging glue (part for preformed adhesive body, the one in pre-plastic package technique Shaping), the plastic packaging glue coats two IC chips of lid completely;The top of each window builds two by preformed adhesive body Pre-plastic package cavity, upper substrate, exposure window in the inner surface of plastic packaging glue surface and preformed adhesive body form hollow pre-plastic package Cavity, described pre-plastic package cavity upward opening, two pre-plastic package cavity tops each set sealing device, the embodiment Sealing device uses the form of cover plate 13, and IC chip is formed by lead with upper substrate and electrically connected, upper substrate and molding Epoxy flux packing material is set between compound;Realized and electrically connected by conductive through hole between upper substrate and infrabasal plate.

Specific embodiment seven,

As shown in fig. lob, the hybrid package structure of mems chip and IC chip, including mems chip, collection Into circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, on the infrabasal plate 4 IC chips are set, electricity is formed by lead between 4 IC chips and between the upper surface of infrabasal plate Connection;One window is set on upper substrate, one or more mems chips are set in window, the present embodiment sets two microcomputers Electrical chip, formed between mems chip and by lead and electrically connected between upper substrate;Upper substrate sets two on upper surface Individual IC chip, two are electrically connected between IC chip and upper surface by lead formation, two ic cores The top of piece sets circuit protection device, and the circuit protection device is a plastic packaging glue (part for preformed adhesive body, in pre-plastic package work It is integrally formed in skill), the plastic packaging glue coats two IC chips of lid completely;The top of window is built by preformed adhesive body Pre-plastic package cavity, upper substrate, exposure window in the inner surface of plastic packaging glue surface and preformed adhesive body form hollow pre-plastic package Cavity, described pre-plastic package cavity upward opening, pre-plastic package cavity top are respectively provided with sealing device, the sealing device of the embodiment Using the form of cover plate, IC chip is formed by lead with upper substrate and electrically connected, between upper substrate and molding compounds Epoxy flux packing material is set;Realized and electrically connected by conductive through hole between upper substrate and infrabasal plate.

Specific embodiment eight,

As shown in figure 11, the hybrid package structure of mems chip and IC chip, including it is mems chip, integrated Circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, set on the infrabasal plate Put 4 IC chips, formed between 4 IC chips and by lead and be electrically connected between the upper surface of infrabasal plate Connect;One window is set on upper substrate, 3 mems chips are set in window, between mems chip and with upper substrate it Between pass through lead formed electrical connection;The top of upper substrate builds a pre-plastic package cavity, upper substrate, exposure by preformed adhesive body Window in the inner surface of plastic packaging glue surface and preformed adhesive body form hollow pre-plastic package cavity, described pre-plastic package cavity to Upper shed, pre-plastic package cavity top set sealing device, and sealing device uses the form of cover plate 13 in the embodiment;Pre-plastic package chamber Protectiveness rubber cover 14 is set in vivo, mems chip and lead wire circuit structure coated completely, for protecting mems chip Circuit;Epoxy flux packing material is set between upper substrate and molding compounds;Pass through conduction between upper substrate and infrabasal plate Through hole realizes electrical connection.

Specific embodiment nine,

As shown in figure 12, the hybrid package structure of mems chip and IC chip, including it is mems chip, integrated Circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, set on the infrabasal plate Put 4 IC chips, formed between 4 IC chips and by lead and be electrically connected between the upper surface of infrabasal plate Connect;One window is set on upper substrate, 3 mems chips are set in window, between mems chip and with upper substrate it Between pass through lead formed electrical connection;Upper substrate top sets sealing device, and the embodiment uses the form of cover plate;Protectiveness is set Rubber cover, mems chip and lead wire circuit structure are coated completely, for protecting mems chip circuit;Protectiveness rubber cover Periphery be previously provided with cofferdam glue 18 to limit the coverage of protectiveness rubber cover;Set between upper substrate and molding compounds Put epoxy flux packing material;Realized and electrically connected by conductive through hole between upper substrate and infrabasal plate.

Specific embodiment ten,

As shown in figure 13, the hybrid package structure of mems chip and IC chip, including it is mems chip, integrated Circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, set on the infrabasal plate Put 4 IC chips, formed between 4 IC chips and by lead and be electrically connected between the upper surface of infrabasal plate Connect;One window is set on upper substrate, one or more mems chips are set in window, the present embodiment sets 3 microcomputer battery cores Piece, formed between mems chip and by lead and electrically connected between upper substrate;The top of window passes through preformed adhesive body Build pre-plastic package cavity, upper substrate, exposure window in the inner surface of plastic packaging glue surface and preformed adhesive body formed it is hollow pre- Plastic packaging cavity, described pre-plastic package cavity upward opening, pre-plastic package cavity top are respectively provided with sealing device, the sealing of the embodiment Device uses the form of cover plate;Window inner mold compound top mounts complementary substrate, and mems chip is positioned over complementary The upper surface of substrate;Protectiveness rubber cover is set in window, mems chip and lead wire circuit structure coated completely, for protecting Protect mems chip circuit;Epoxy flux packing material is set between upper substrate and molding compounds;Upper substrate and infrabasal plate Between pass through conductive through hole realize electrical connection.

Specific embodiment 11,

As shown in figure 14, the hybrid package structure of mems chip and IC chip, including it is mems chip, integrated Circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, set on the infrabasal plate Put 4 IC chips, formed between 4 IC chips and by lead and be electrically connected between the upper surface of infrabasal plate Connect;One window is set on upper substrate, one or more mems chips are set in window, the present embodiment sets 2 microcomputer battery cores Piece, formed between mems chip and by lead and electrically connected between upper substrate;The upper substrate is served as a contrast using metal framework Bottom 17;Window top structure pre-plastic package cavity, metal frame substrate, exposure window in plastic packaging glue surface and preformed adhesive body Inner surface form hollow pre-plastic package cavity, described pre-plastic package cavity upward opening, pre-plastic package cavity top is respectively provided with envelope Attach together and put, the sealing device of the embodiment uses the form of cover plate;Protectiveness rubber cover is set in window, by mems chip and Lead wire circuit structure coats completely, for protecting mems chip circuit;Epoxy is set to help between upper substrate and molding compounds Solder flux packing material;Realized and electrically connected by conductive through hole between upper substrate and infrabasal plate.

Specific embodiment 12,

As shown in figure 15, the hybrid package structure of mems chip and IC chip, including it is mems chip, integrated Circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, set on the infrabasal plate Put 4 IC chips, formed between 4 IC chips and by lead and be electrically connected between the upper surface of infrabasal plate Connect;One window is set on upper substrate, one or more mems chips are set in window, the present embodiment sets 2 microcomputer battery cores Piece, formed between mems chip and by lead and electrically connected between upper substrate;The upper substrate is served as a contrast using metal framework Bottom, the metal frame substrate are referred to as metal frame substrate plastic packaging glue by plastic packaging glue plastic packaging, the plastic packaging glue;The top structure of window is pre- Plastic packaging cavity, metal frame substrate, exposure window in the inner surface of plastic packaging glue surface and preformed adhesive body formed it is hollow pre- Plastic packaging cavity, described pre-plastic package cavity upward opening, pre-plastic package cavity top are respectively provided with sealing device, the sealing of the embodiment Device uses the form of cover plate;Protectiveness rubber cover is set in window, mems chip and lead wire circuit structure are coated completely, For protecting mems chip circuit;The filler of metal frame substrate plastic packaging glue 16 is set between upper substrate and molding compounds; Realized and electrically connected by conductive through hole between upper substrate and infrabasal plate.

Specific embodiment 13,

As shown in figure 16, the hybrid package structure of mems chip and IC chip, including it is mems chip, integrated Circuit chip, upper substrate, infrabasal plate and the molding compounds being arranged between upper substrate and infrabasal plate, set on the infrabasal plate Put 4 IC chips, formed between 4 IC chips and by lead and be electrically connected between the upper surface of infrabasal plate Connect;One window is set on upper substrate, 2 mems chips are set in window, between mems chip and with upper substrate it Between pass through lead formed electrical connection;Upper substrate top sets sealing device, and the embodiment uses the form of cover plate;Protectiveness is set Rubber cover, mems chip and lead wire circuit structure are coated completely, for protecting mems chip circuit;Protectiveness rubber cover Periphery be previously provided with cofferdam glue 18 to limit the coverage of protectiveness rubber cover;Upper substrate top sets two electronics members Device package, electronic component packaging body are formed with upper substrate and electrically connected;Epoxy is set between upper substrate and molding compounds Scaling powder packing material;Realized and electrically connected by conductive through hole between upper substrate and infrabasal plate.

The sealing device that upper substrate top described in this programme is set is not limited to the form of the cover plate shown in figure, and other can In realizing that this all kinds of devices that sealing function is carried out above upper substrate are included in.

Mems chip described in this programme, circuit protection device provided around IC chip are not limited only to protect Property covering colloid, in other can realize that the device of this function is included in.

This programme is not limited to these chips enumerated, can be according to different user's requests in upper and lower substrate and each window It is intraoral that multiple different chips are set, and can be configured to different combinations and be configured.

Chip in this programme is not only to be set in parallel on upper and lower substrate, can also be set by way of stacking In on upper and lower substrate.

A kind of method for packing of the hybrid package structure of mems chip and IC chip, comprises the following steps:

Step 1, plant tin ball, IC chip stickup, wirebonding operations are carried out on infrabasal plate;

Step 2, the tin ball on infrabasal plate, IC chip, lead carry out plastic packaging;

Step 3, the plastic package structure above tin ball carry out laser ablation, and continued above the tin ball after laser ablation Carry out planting tin ball exercise work;

Step 4, upper substrate is set;

Step 5, at least one window is set on upper substrate;

Step 6, mems chip is set in window, and wirebonding operations are carried out to mems chip;

Step 7, carry out glue dispensing and packaging formation encapsulating structure.

Mems chip is fixed by the way of mems chip is pasted on molding compounds in the embodiment.

Further, as shown in figure 17, the invention also discloses the mixing of a kind of mems chip and IC chip The method for packing of encapsulating structure, comprises the following steps:

Step 1, plant tin ball, IC chip stickup, wirebonding operations are carried out on infrabasal plate;

Step 2, the tin ball on infrabasal plate, IC chip, lead carry out plastic packaging;

Step 3, the plastic package structure above tin ball carry out laser ablation, and continued above the tin ball after laser ablation Carry out planting tin ball exercise work;

Step 4, upper substrate is set;

Step 5, at least one window is set on upper substrate;

Step 6, upper substrate top set pre-plastic package cavity;

Step 7, mems chip is set in window, and wirebonding operations are carried out to mems chip;

Step 8, pre-plastic package cavity top set sealing device;

Step 9, carry out glue dispensing and packaging formation encapsulating structure.

Claims (16)

1. the hybrid package structure of mems chip and IC chip, including mems chip, IC chip, upper base Plate, infrabasal plate and the plastic packaging glue being arranged between upper substrate and infrabasal plate, mems chip, IC chip and upper substrate And/or electrical connection is formed between infrabasal plate, formed and electrically connected between upper substrate and infrabasal plate, it is characterised in that:Opened on upper substrate Go out at least one window for penetrating upper substrate, one or more mems chips and/or IC chip are positioned over upper substrate Window at, lower substrate surface and/or upper substrate surface.
2. the hybrid package structure of mems chip according to claim 1 and IC chip, it is characterised in that:Institute It is upper strata circuit substrate to state upper substrate, and infrabasal plate is lower circuit substrate, wherein,
Mems chip or IC chip, referred to as infrabasal plate upper die are placed on the upper surface of infrabasal plate, on infrabasal plate The active surface of circuit, IC chip on the mems chip of side is by being electrically connected to the surface of infrabasal plate;
The top of infrabasal plate sets plastic packaging glue, modeling sealant covers infrabasal plate upper die, electronic component and the binding that is electrically connected Structure;
The lower surface of upper substrate fits in the top of plastic packaging glue, and the gap between the lower surface of upper substrate and plastic packaging glue sets filling Thing;
It is with filler and logical with what is electrically connected that plastic packaging glue is arranged through between the lower surface of upper substrate and the upper surface of infrabasal plate Hole, the conductive material in through hole inside;
The window is penetrated to plastic packaging glue surface, and mems chip or ic core are placed in the plastic packaging glue surface in window Piece, chip referred to as in window, the circuit on mems chip, the active surface of IC chip in window pass through electrical connection To the surface of upper substrate.
3. the hybrid package structure of mems chip according to claim 1 or 2 and IC chip, its feature exist In:The oriented recessed structure sunk or raised up of plastic packaging glue, is referred to as recessed heavy window and embossed window in the window.
4. the hybrid package structure of the mems chip and IC chip according to claim 1,2 or 3, its feature exist In:Circuit protection device is set around the mems chip, IC chip.
5. the hybrid package structure of mems chip according to claim 4 and IC chip, it is characterised in that:Institute State circuit protection device and cover colloid or plastic packaging glue for protectiveness.
6. the hybrid package structure of mems chip according to claim 1 or 2 and IC chip, its feature exist In:The upper substrate top sets sealing device.
7. the hybrid package structure of mems chip according to claim 1 or 2 and IC chip, its feature exist In:At least one pre-plastic package cavity is set above upper substrate.
8. the hybrid package structure of mems chip according to claim 1 or 2 and IC chip, its feature exist In:The mems chip or IC chip can be parallel or stack placement.
9. the hybrid package structure of mems chip according to claim 1 or 2 and IC chip, its feature exist In:Complementary substrate is placed on plastic packaging glue surface in window first, then places microcomputer battery core in the upper surface of complementary substrate Piece.
10. the hybrid package structure of mems chip according to claim 1 or 2 and IC chip, its feature exist In:Infrabasal plate lower surface and can form electrical connection with the printed circuit board (PCB) or packaging body or power interconnection that are disposed below.
11. the hybrid package structure of mems chip according to claim 1 or 2 and IC chip, its feature exist In:The upper substrate uses metal frame substrate.
12. the hybrid package structure of mems chip according to claim 11 and IC chip, it is characterised in that: The metal frame substrate is referred to as metal frame substrate plastic packaging glue by plastic packaging glue plastic packaging, the plastic packaging glue.
13. the hybrid package structure of mems chip according to claim 2 and IC chip, it is characterised in that: The filler is metal frame substrate plastic packaging glue.
14. the hybrid package structure of mems chip according to claim 1 or 2 and IC chip, its feature exist In:Set on the upper surface of the upper substrate and/or infrabasal plate formed electrical connection at least one electronic component or its Packaging body.
15. the method for packing of the hybrid package structure based on mems chip described in claim 1 and IC chip, it is special Sign is:Comprise the following steps:
Step 1, on infrabasal plate plant tin ball, IC chip stickup, set electrical connection mechanism and form electrical connection behaviour Make;
Step 2, the tin ball on infrabasal plate, IC chip, electrical connection mechanism carry out plastic packaging;
Step 3, the plastic package structure above tin ball carry out laser ablation, and continued above the tin ball after laser ablation Tin ball exercise is planted to make;
Step 4, the tin ball bonding for obtaining the upper substrate with least one window with step 3, while it is filled thing Filling;
Step 5, mems chip is placed in window, and operation is electrically connected to mems chip;
Step 6, dispensing is carried out, plus sealing device, form encapsulating structure.
16. the method for packing of the hybrid package structure based on mems chip described in claim 1 and IC chip, it is special Sign is:Comprise the following steps:
Step 1, on infrabasal plate plant tin ball, IC chip stickup, set electrical connection mechanism and form electrical connection behaviour Make;
Step 2, the tin ball on infrabasal plate, IC chip, electrical connection mechanism carry out plastic packaging;
Step 3, the plastic package structure above tin ball carry out laser ablation, and continued above the tin ball after laser ablation Tin ball exercise is planted to make;
Step 4, the tin ball bonding for obtaining the upper substrate with least one window with step 3, while it is filled thing Filling;
Step 5, upper substrate top set pre-plastic package cavity;
Step 6, mems chip is placed in window, and operation is electrically connected to mems chip;
Step 7, dispensing is carried out, plus sealing device, form encapsulating structure.
CN201610466655.7A 2016-06-23 2016-06-23 The hybrid package structure and its method for packing of mems chip and IC chip CN107539943A (en)

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