CN107529539A - A kind of LED lamp chip encapsulation material - Google Patents

A kind of LED lamp chip encapsulation material Download PDF

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Publication number
CN107529539A
CN107529539A CN201710587693.2A CN201710587693A CN107529539A CN 107529539 A CN107529539 A CN 107529539A CN 201710587693 A CN201710587693 A CN 201710587693A CN 107529539 A CN107529539 A CN 107529539A
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CN
China
Prior art keywords
parts
led lamp
encapsulation material
chip encapsulation
lamp chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710587693.2A
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Chinese (zh)
Inventor
何子连
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chizhou Xiang Xiang Photoelectric Technology Co Ltd
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Chizhou Xiang Xiang Photoelectric Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Chizhou Xiang Xiang Photoelectric Technology Co Ltd filed Critical Chizhou Xiang Xiang Photoelectric Technology Co Ltd
Priority to CN201710587693.2A priority Critical patent/CN107529539A/en
Publication of CN107529539A publication Critical patent/CN107529539A/en
Pending legal-status Critical Current

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Abstract

The present invention relates to a kind of LED lamp chip encapsulation material, it is made up of the component of following mass fraction:Rubber powder is 15~19 parts, 6~12 parts of methyl phenyl vinyl polysiloxanes, tetraethyl orthosilicate are 4~8 parts, phenyl polysiloxane is 18~22 parts, castor oil is 8~10 parts, aluminium hydroxide is 3~5 parts.The present invention significantly improves the refractive index, hardness and adhesion strength of light emitting diode by being optimized to the material of Light-Emitting Diode.The refractive index of LED lamp chip encapsulation material that the method for the present invention is prepared is 1.64 to 1.68, and shore hardness is 64A to 70A, and adhesion strength is 6.6MPa to 7.2MPa.

Description

A kind of LED lamp chip encapsulation material
Technical field
The present invention relates to a kind of LED lamp chip encapsulation material, belong to LED technology field.
Background technology
LED is new generation of green environment-friendly products, is widely used in automobile, illumination, electronic equipment backlight, traffic lights etc. Field.In order to protect chip, prevent the undesirable element of external environment condition from being caused damage to chip, extend LED service life, to it Chip is packaged.
The content of the invention
It is an object of the invention to provide a kind of LED lamp chip encapsulation material, preferably to be sealed for LED Dress, improve LED using effect.
To achieve these goals, technical scheme is as follows.
A kind of LED lamp chip encapsulation material, is made up of the component of following mass fraction:Rubber powder be 15~19 parts, 6~12 parts of methyl phenyl vinyl polysiloxanes, tetraethyl orthosilicate are 4~8 parts, phenyl polysiloxane is 18~22 parts, castor oil It it is 3~5 parts for 8~10 parts, aluminium hydroxide.
The preparation method of above-mentioned encapsulating material is following steps:
(1) rubber powder, methyl phenyl vinyl polysiloxanes, castor oil, the aluminium hydroxide of above-mentioned mass fraction are taken, by rubber Dissolve, stirred after dissolving to mixed after four kinds of rubber powder, methyl phenyl vinyl polysiloxanes, castor oil, aluminium hydroxide composition heating Close uniform;
(2) tetraethyl orthosilicate, the phenyl polysiloxane of above-mentioned mass fraction are added again, are stirred;
(3) mixture is subjected to deaeration, inclined heated plate 3h in vacuum degasing machine;
(4) feed the mixture into mould and solidified again, solidification temperature is 140 DEG C~150 DEG C, and room is cooled to after solidification Temperature, LED lamp chip encapsulation material is prepared.
The beneficial effect of the invention is:The present invention is significant to improve by being optimized to the material of Light-Emitting Diode The refractive index of light emitting diode, hardness and adhesion strength.The LED lamp chip package material that the method for the present invention is prepared The refractive index of material is 1.64 to 1.68, and shore hardness is 64A to 70A, and adhesion strength is 6.6MPa to 7.2MPa.
Embodiment
The embodiment of the present invention is described with reference to embodiment, to be better understood from the present invention.
Embodiment 1
LED lamp chip encapsulation material in the present embodiment, is made up of the component of following mass fraction:Rubber powder is 15 Part, 6 parts of methyl phenyl vinyl polysiloxanes, tetraethyl orthosilicate are 4 parts, phenyl polysiloxane is 18 parts, castor oil is 8 parts, hydrogen Aluminum oxide is 3 parts.
Above-mentioned encapsulation preparation method is following steps:
(1) rubber powder, methyl phenyl vinyl polysiloxanes, castor oil, the aluminium hydroxide of above-mentioned mass fraction are taken, by rubber Dissolve, stirred after dissolving to mixed after four kinds of rubber powder, methyl phenyl vinyl polysiloxanes, castor oil, aluminium hydroxide composition heating Close uniform;
(2) tetraethyl orthosilicate, the phenyl polysiloxane of above-mentioned mass fraction are added again, are stirred;
(3) mixture is subjected to deaeration, inclined heated plate 3h in vacuum degasing machine;
(4) feed the mixture into mould and solidified again, solidification temperature is 140 DEG C DEG C, and room temperature is cooled to after solidification, is made It is standby to obtain LED lamp chip encapsulation material.
The refractive index for the LED lamp chip encapsulation material that the method for the present invention is prepared is 1.64, and shore hardness is 64A, adhesion strength 6.6MPa.
Embodiment 2
LED lamp chip encapsulation material in the present embodiment, is made up of the component of following mass fraction:Rubber powder is 17 Part, 9 parts of methyl phenyl vinyl polysiloxanes, tetraethyl orthosilicate are 6 parts, phenyl polysiloxane is 20 parts, castor oil is 9 parts, hydrogen Aluminum oxide is 4 parts.
Above-mentioned encapsulation preparation method is following steps:
(1) rubber powder, methyl phenyl vinyl polysiloxanes, castor oil, the aluminium hydroxide of above-mentioned mass fraction are taken, by rubber Dissolve, stirred after dissolving to mixed after four kinds of rubber powder, methyl phenyl vinyl polysiloxanes, castor oil, aluminium hydroxide composition heating Close uniform;
(2) tetraethyl orthosilicate, the phenyl polysiloxane of above-mentioned mass fraction are added again, are stirred;
(3) mixture is subjected to deaeration, inclined heated plate 3h in vacuum degasing machine;
(4) feed the mixture into mould and solidified again, solidification temperature is 145 DEG C, and room temperature is cooled to after solidification, is prepared Obtain LED lamp chip encapsulation material.
The refractive index for the LED lamp chip encapsulation material that the method for the present invention is prepared is 1.68, and shore hardness is 70A, adhesion strength 7.2MPa.
Embodiment 3
LED lamp chip encapsulation material in the present embodiment, is made up of the component of following mass fraction:Rubber powder is 19 Part, 12 parts of methyl phenyl vinyl polysiloxanes, tetraethyl orthosilicate are 8 parts, phenyl polysiloxane is 22 parts, castor oil is 10 parts, Aluminium hydroxide is 5 parts.
Above-mentioned encapsulation preparation method is following steps:
(1) rubber powder, methyl phenyl vinyl polysiloxanes, castor oil, the aluminium hydroxide of above-mentioned mass fraction are taken, by rubber Dissolve, stirred after dissolving to mixed after four kinds of rubber powder, methyl phenyl vinyl polysiloxanes, castor oil, aluminium hydroxide composition heating Close uniform;
(2) tetraethyl orthosilicate, the phenyl polysiloxane of above-mentioned mass fraction are added again, are stirred;
(3) mixture is subjected to deaeration, inclined heated plate 3h in vacuum degasing machine;
(4) feed the mixture into mould and solidified again, solidification temperature is 150 DEG C, and room temperature is cooled to after solidification, is prepared Obtain LED lamp chip encapsulation material.
The refractive index for the LED lamp chip encapsulation material that the method for the present invention is prepared is 1.66, and shore hardness is 68A, adhesion strength 6.9MPa.
Described above is the preferred embodiment of the present invention, it is noted that for those skilled in the art For, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as Protection scope of the present invention.

Claims (2)

  1. A kind of 1. LED lamp chip encapsulation material, it is characterised in that:It is made up of the component of following mass fraction:Rubber powder is 15~19 parts, 6~12 parts of methyl phenyl vinyl polysiloxanes, tetraethyl orthosilicate be 4~8 parts, phenyl polysiloxane be 18~22 Part, castor oil are 8~10 parts, aluminium hydroxide is 3~5 parts.
  2. 2. LED lamp chip encapsulation material according to claim 1, it is characterised in that:The preparation of the encapsulating material Method is following steps:
    (1) rubber powder, methyl phenyl vinyl polysiloxanes, castor oil, the aluminium hydroxide of above-mentioned mass fraction are taken, by rubber Dissolved after four kinds of powder, methyl phenyl vinyl polysiloxanes, castor oil, aluminium hydroxide composition heating, stirring extremely mixing after dissolving Uniformly;
    (2) tetraethyl orthosilicate, the phenyl polysiloxane of above-mentioned mass fraction are added again, are stirred;
    (3) mixture is subjected to deaeration in vacuum degasing machine, inclined heated plate is about 3h;
    (4) feed the mixture into mould and solidified again, solidification temperature is about 140 DEG C~150 DEG C, and room is cooled to after solidification Temperature, LED lamp chip encapsulation material is prepared.
CN201710587693.2A 2017-07-18 2017-07-18 A kind of LED lamp chip encapsulation material Pending CN107529539A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710587693.2A CN107529539A (en) 2017-07-18 2017-07-18 A kind of LED lamp chip encapsulation material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710587693.2A CN107529539A (en) 2017-07-18 2017-07-18 A kind of LED lamp chip encapsulation material

Publications (1)

Publication Number Publication Date
CN107529539A true CN107529539A (en) 2018-01-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710587693.2A Pending CN107529539A (en) 2017-07-18 2017-07-18 A kind of LED lamp chip encapsulation material

Country Status (1)

Country Link
CN (1) CN107529539A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104788961A (en) * 2015-05-20 2015-07-22 龚灿锋 LED encapsulating material
CN104893311A (en) * 2015-07-01 2015-09-09 杨高林 LED packaging material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104788961A (en) * 2015-05-20 2015-07-22 龚灿锋 LED encapsulating material
CN104893311A (en) * 2015-07-01 2015-09-09 杨高林 LED packaging material

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Application publication date: 20180102