CN107516483A - Electrical detection method, device and the display module of device fault - Google Patents
Electrical detection method, device and the display module of device fault Download PDFInfo
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- CN107516483A CN107516483A CN201710900166.2A CN201710900166A CN107516483A CN 107516483 A CN107516483 A CN 107516483A CN 201710900166 A CN201710900166 A CN 201710900166A CN 107516483 A CN107516483 A CN 107516483A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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Abstract
The present invention provides a kind of electrical detection method of device fault, device and display module.The electrical detection method of the device fault includes：In the setting time section that a detection-phase includes, a predetermined set voltage is provided to outside compensating line, the detection time section that the detection-phase includes is entered after predetermined setting time；In the detection time section that the detection-phase includes, control external compensation line is in floating state, tentation data voltage is provided to data wire, predetermined power source voltage is provided to power voltage input terminal, tentation data write-in control voltage is provided to data write-in control terminal, external compensation control voltage is provided to external compensation control terminal, after the predetermined detection time, the voltage on external compensation line is detected, and whether the device for judging external compensation image element circuit according to the voltage and including breaks down.The present invention, which solves the problems, such as that the various dim spots in organic LED display panel processing procedure are bad, accurately to be detected under lighting state.
Description
Technical field
The present invention relates to display failure detection method, more particularly to a kind of electrical detection method of device fault, device and
Display module.
Background technology
, can be due in OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) display field
The complexity of drive module is higher, causes to have higher difficulty on Panel (panel) manufacturing process, dim spot is bad occurred frequently
And some dim spots are bad inevitable.But in existing lighting test, it is difficult to it is bad accurately to detect various dim spots.And
And many test section screening display panels are had in manufacturing process, cause the yield loss of production process larger, and very
More bad is that processing procedure can also occur after a test.
The content of the invention
It is a primary object of the present invention to provide a kind of electrical detection method of device fault, device and display module, solution
Various dim spots certainly in the prior art in OLED (Organic Light Emitting Diode) display panel processing procedure are bad can not be in lighting state
Lower the problem of accurately being detected.
In order to achieve the above object, the invention provides a kind of electrical detection method of device fault, mended applied to outside
Repay image element circuit, the external compensation image element circuit and data write-in control terminal, data wire, power voltage input terminal, outside benefit
Repay control terminal to connect with external compensation line, a detection-phase includes setting time section and detection time section, the device fault
Electrical detection method includes：
In the setting time section that a detection-phase includes, a predetermined set voltage is provided to the external compensation line, is passed through
Enter the detection time section that the detection-phase includes after predetermined setting time；
In the detection time section that the detection-phase includes, the external compensation line is controlled to be in floating state, to the number
Tentation data voltage is provided according to line, predetermined power source voltage is provided to the power voltage input terminal, writes and control to the data
End provides tentation data write-in control voltage, external compensation control voltage is provided to the external compensation control terminal, by predetermined
After detection time, the voltage on the external compensation line is detected, and the external compensation image element circuit bag is judged according to the voltage
Whether the device included breaks down.
During implementation, the electrical detection method of device fault of the present invention specifically includes：Include in the first detection-phase
Setting time section, provide the first set voltage to the external compensation line, enter after the first predetermined setting time described
The detection time section that first detection-phase includes；First set voltage is the first positive voltage；
In the detection time section that first detection-phase includes, the external compensation line is controlled to be in floating state, to
The data write-in control terminal provides the first data write-in control voltage, so that the gate source voltage for obtaining data writing transistor is more than
The threshold voltage of the data writing transistor, the first external compensation control voltage is provided to the external compensation control terminal, so that
The gate source voltage for obtaining external compensation controlling transistor is more than the threshold voltage of the external compensation controlling transistor, to the data wire
The first data voltage is provided, to cause the gate source voltage of driving transistor to be less than the threshold voltage of the driving transistor, to described
Power voltage input terminal provides the first supply voltage, after the first predetermined detection time, detects on the external detection line
Whether voltage, the device that judging the external compensation image element circuit according to the voltage includes break down；The first data electricity
Press as the second positive voltage.
During implementation, the first data voltage is less than the first set voltage；It is described that the external compensation picture is judged according to the voltage
The device that plain circuit the includes step that whether breaks down includes：When the voltage on the external detection line detected is positioned at described
When between the first data voltage and first set voltage, the storage capacitance that the external compensation image element circuit includes is determined
Both ends between short circuit.
During implementation, the external compensation image element circuit is also connected with low-voltage input, the low-voltage input input
Low-voltage be less than first set voltage；The device for judging that the external compensation image element circuit includes according to the voltage
The step that whether breaks down also includes：Difference between the voltage on the external detection line detected and the low-voltage
Absolute value when being less than the first predetermined voltage difference, determine the first of the light-emitting component that the external compensation image element circuit includes
It is short-circuit between pole and the second pole of the light-emitting component.
During implementation, first supply voltage is more than first set voltage；It is described to be judged according to the voltage outside described
The device that portion's compensation pixel circuit the includes step that whether breaks down also includes：Electricity on the external detection line detected
Pressure is more than first set voltage, and between voltage on the external detection line detected and first set voltage
Difference be more than the first predetermined voltage difference and when being less than the second predetermined voltage difference, determine the external compensation image element circuit
Including the grid of driving transistor that includes of power voltage input terminal and the external compensation image element circuit between short circuit；Described
One predetermined voltage difference is the first positive electricity pressure difference, and the second predetermined voltage difference is the second positive electricity pressure difference, described second
Predetermined voltage difference is more than the first predetermined voltage difference.
During implementation, whether the device for judging the external compensation image element circuit according to the voltage and including breaks down step
Suddenly also include：When the voltage on the external detection line detected is more than first set voltage, and detect described
The difference between voltage and first set voltage on external detection line is more than the second predetermined voltage difference and less than the 3
During predetermined voltage difference, short circuit between the data write-in control terminal and the grid of the driving transistor is determined；Described
Three predetermined voltage differences are the 3rd positive electricity pressure difference, and the 3rd predetermined voltage difference is more than the second predetermined voltage difference.
During implementation, whether the device for judging the external compensation image element circuit according to the voltage and including breaks down step
Suddenly also include：
When the voltage on the external detection line detected is more than first set voltage, and detect described outer
When the difference between voltage and first set voltage in portion's detection line is more than the 4th predetermined voltage difference, determine described
The short-circuit and/or storage capacitance is breakdown between the grid of driving transistor and the drain electrode of the driving transistor；Described 4th
Predetermined voltage difference is the 4th positive electricity pressure difference, and the 4th predetermined voltage difference is more than the 3rd predetermined voltage difference；
It is exhausted when the voltage difference between the voltage on the external detection line detected and first set voltage
When being less than the 5th predetermined voltage difference to value, not short-circuit, described light-emitting component between the both ends of the storage capacitance is determined
Not short-circuit, described power voltage input terminal and the grid of the driving transistor between first pole and the second pole of the light-emitting component
Between not short-circuit, described driving transistor between not short-circuit, data write-in control terminal and the grid of the driving transistor
Grid and the driving transistor drain electrode between the not short-circuit and storage capacitance it is not breakdown；5th predetermined voltage difference
It is worth for the 5th positive electricity pressure difference.
During implementation, not short-circuit, the described luminous member between the both ends of the storage capacitance are determined in the first detection-phase
Not short-circuit, described power voltage input terminal and the driving transistor between first pole of part and the second pole of the light-emitting component
Not short-circuit, described driving is brilliant between not short-circuit between grid, described data write-in control terminal and the grid of the driving transistor
When the not short-circuit and storage capacitance is not breakdown between the grid of body pipe and the drain electrode of the driving transistor, in the described first inspection
The second detection-phase is additionally provided with after the survey stage, the electrical detection method of the device fault also includes：
In the setting time section that the second detection-phase includes, the second set voltage is provided to the external compensation line, is passed through
Enter the detection time section that second detection-phase includes after second predetermined setting time；
In the detection time section that second detection-phase includes, the external compensation line is controlled to be in floating state, to
The data write-in control terminal provides the second data write-in control voltage, to cause the gate source voltage of the data writing transistor
More than the threshold voltage of the data writing transistor, the second external compensation control voltage is provided to the external compensation control terminal,
To cause the gate source voltage of the external compensation controlling transistor to be more than the threshold voltage of the external compensation controlling transistor, to institute
State data wire and the second data voltage is provided, to cause the gate source voltage of driving transistor to be more than the threshold value electricity of the driving transistor
Pressure, second source voltage is provided to the power voltage input terminal, after the second predetermined detection time, detect the outside inspection
Voltage on survey line；
It is exhausted when the voltage difference between the voltage on the external detection line detected and second set voltage
When being less than the 6th predetermined voltage difference to value, determine data writing transistor and/or external compensation controlling transistor can not be just
Really open；The 6th predetermined voltage difference is the 6th positive electricity pressure difference；
It is exhausted when the voltage difference between the voltage on the external detection line detected and second set voltage
When being more than the 7th predetermined voltage difference to value, the data writing transistor and the external compensation controlling transistor are determined not
Failure be present；The 7th predetermined voltage difference is the 7th positive electricity pressure difference；
The 7th predetermined voltage difference is more than the 6th predetermined voltage difference.
It is described applied to external compensation image element circuit present invention also offers a kind of electrical detection device of device fault
External compensation image element circuit and data write-in control terminal, data wire, power voltage input terminal, external compensation control terminal and outside benefit
Line connection is repaid, the electrical detection device of the device fault includes set unit, status control unit, voltage providing unit, inspection
Unit and breakdown judge unit are surveyed, wherein,
The set unit is used for the setting time section included in a detection-phase, and a pre- fixation is provided to outside compensating line
Position voltage；
The status control unit is used for the detection time section included in the detection-phase, controls at the external compensation line
In floating state；
The voltage providing unit is used to provide tentation data voltage to the data wire, to the power voltage input terminal
Predetermined power source voltage is provided, tentation data write-in control voltage is provided to data write-in control terminal, to the external compensation
Control terminal provides predetermined external compensation control voltage, and after the predetermined detection time, detection control is sent to the detection unit
Signal；
The detection unit is used to after the detection control signal is received detect the voltage on the external compensation line；
The breakdown judge unit is used to detect the voltage on the obtained external compensation line according to the detection unit
Whether the device that judging the external compensation image element circuit includes breaks down.
Present invention also offers a kind of display module, including external compensation image element circuit, in addition to above-mentioned device fault
Electrical detection device.
Compared with prior art, the electrical detection method of device fault of the present invention, device and display module pass through
The setting time section first included in a detection-phase provides predetermined set voltage to outside compensating line, by predetermined setting time
Afterwards, the detection time section included in the detection-phase, control external compensation line is in floating state, to data wire, supply voltage
Input, data write-in control terminal and external compensation control terminal provide corresponding voltage respectively, lead to after the predetermined detection time
The voltage crossed on detection external compensation line, it can judge whether is device that the external compensation image element circuit includes according to the voltage
Break down, so as to provide improved direction according to the result detected for manufacturing process, and be compensation program optimization
There is provided and support, improve the yields of production process.
Brief description of the drawings
Fig. 1 is the flow chart of the electrical detection method of the device fault described in the embodiment of the present invention；
Fig. 2 is the external compensation image element circuit that the electrical detection method of the device fault described in the embodiment of the present invention is applied to
Structure chart；
Fig. 3 is in the oscillogram that the first detection-phase is the voltage that each signal wire and each signal end provide；
Fig. 4 is to be provided in the first detection-phase for each signal wire of external compensation image element circuit and each signal end shown in Fig. 3
Voltage when external compensation line Sense on voltage analogous diagram；
Fig. 5 is the external compensation pixel when short-circuit between storage capacitance Cst first end and storage capacitance Cst the second end
The schematic diagram of circuit；
Fig. 6 is the external compensation image element circuit when short-circuit between Organic Light Emitting Diode OLED anode and OLED negative electrode
Schematic diagram；
Fig. 7 is the external compensation pixel when short-circuit between power voltage input terminal ELVDD and driving transistor T2 grid G
The schematic diagram of circuit；
Fig. 8 is the external compensation pixel electricity when short-circuit between data write-in control terminal G1 and driving transistor T2 grid G
The schematic diagram on road；
Fig. 9 is the signal of the external compensation image element circuit when short-circuit between the drain electrode of driving transistor T2 source electrode and T2
Figure；
Figure 10 is the schematic diagram of the external compensation image element circuit when storage capacitance Cst is breakdown；
Figure 11 is in the oscillogram that the second detection-phase is the voltage that each signal wire and each signal end provide；
Figure 12 is to be provided in the second detection-phase for each signal wire of external compensation image element circuit and each signal end shown in Fig. 5
Voltage when external compensation line Sense on voltage analogous diagram；
Figure 13 is the schematic diagram of external compensation image element circuit when data writing transistor T1 can not be opened normally；
Figure 14 is the schematic diagram of external compensation image element circuit when external compensation controlling transistor T3 can not be opened normally.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
The electrical detection method of device fault described in the embodiment of the present invention, it is described applied to external compensation image element circuit
External compensation image element circuit and data write-in control terminal, data wire, power voltage input terminal, external compensation control terminal and outside benefit
Line connection is repaid, a detection-phase includes setting time section and detection time section, as shown in figure 1, the electricity inspection of the device fault
Survey method includes：
St1：In the setting time section that a detection-phase includes, a predetermined set voltage is provided to the external compensation line,
Enter the detection time section that the detection-phase includes after predetermined setting time；
St2：In the detection time section that the detection-phase includes, the external compensation line is controlled to be in floating state, to institute
State data wire and tentation data voltage is provided, provide predetermined power source voltage to the power voltage input terminal, write to the data
Control terminal provides tentation data write-in control voltage, provides external compensation control voltage to the external compensation control terminal, passes through
After the predetermined detection time, the voltage on the external compensation line is detected, and the external compensation pixel electricity is judged according to the voltage
Whether the device that road includes breaks down.
The embodiments of the invention provide a kind of electrical detection method of the device fault in image element circuit for external compensation,
Because during OLED (Organic Light Emitting Diode) display panel processing procedure, each device in external compensation image element circuit may
Break down, therefore the electrical detection method of the device fault described in the embodiment of the present invention is included by elder generation in a detection-phase
Setting time section provides predetermined set voltage to outside compensating line, after predetermined setting time, includes in the detection-phase
Detection time section, control external compensation line are in floating state, and control terminal is write to data wire, power voltage input terminal, data
Corresponding voltage is provided respectively with external compensation control terminal, by detecting the electricity on external compensation line after the predetermined detection time
Pressure, whether the device that the external compensation image element circuit can be judged according to the voltage to be included breaks down, so as to basis
The result detected provides improved direction for manufacturing process, and provides support for compensation program optimization, improves production
The yields of process.
As shown in Fig. 2 the external compensation image element circuit includes：Data writing transistor T1, grid are controlled with data write-in
Transistor G1 connections processed, source electrode are connected with data wire Data；Driving transistor T2, grid G and data write-in control crystal
Pipe T1 drain electrode connection, drain electrode are connected with power voltage input terminal ELVDD, and source S is connected with light-emitting element E L the first pole；Deposit
Storing up electricity holds Cst, and first end is connected with the grid G of the driving transistor T2, the second end and the source S of the driving transistor T2
Connection；External compensation controlling transistor T3, grid are connected with external compensation control terminal G2, and source electrode is with the driving transistor T2's
Source S is connected, and drain electrode is connected with external compensation line Sense；And light-emitting element E L, the second pole and low-level input ELVSS
Connection.
In practical operation, the low level of ELVSS inputs can be 0V, but be not limited.
In the specific implementation, EL can be OLED (Organic Light Emitting Diode), EL the first extremely OLED anode, EL's
Second extremely OLED negative electrode.
In the specific implementation, all transistors in Fig. 2 are all n-type transistor, but in practical operation, above crystal
Pipe may alternatively be p-type transistor, but the control signal of the grid of each above transistor access needs corresponding change, herein
The type of above transistor is not construed as limiting.
In practical operation, as shown in Fig. 2 electric capacity Cs on Sense be present, in fig. 2, GND sign ground terminals.Due to Cs's
In the presence of, then need just to can guarantee that by certain time after Sense is provided one voltage by Cs chargings so that lifting Sense
On voltage, so as to need to set predetermined setting time and predetermined detection time.
In practical operation, the electrical detection method of the device fault described in the embodiment of the present invention devises two
Pattern (figure), following device fault type can be detected altogether：Storage capacitance Cst first end and storage electricity
It is whether short-circuit, electric between short-circuit, light-emitting element E L the first pole and light-emitting element E L the second pole between appearance Cst the second end
Short-circuit between source voltage input end ELVDD and driving transistor T2 grid G (namely driving transistor T2 grid and driving crystalline substance
It is short-circuit between body pipe T2 drain electrode), (namely data are write for short circuit between the grid G of data write-in control terminal G1 and driving transistor
Enter short circuit between transistor T1 grids and the data writing transistor T1 drain electrode), driving transistor T2 source electrode and the driving
Short circuit and/or storage capacitance Cst breakdown, data writing transistor T1 and/or external compensation control between transistor T2 drain electrode
Transistor T3 can not correctly open that (that is, when T1 and T3 is n-type transistor, T1, which can not be opened correctly, to be referred to：When T1 grid source
When voltage is more than T1 threshold voltage, T1 can not control the connection turned between its source electrode and its drain electrode；When T3 gate source voltage
During threshold voltage more than T3, T3 can not be opened normally, led to not carry out data write-in and resetted work.
Specifically, the electrical detection method of the device fault described in the embodiment of the present invention can specifically include：
In the setting time section that the first detection-phase includes, the first set voltage is provided to the external compensation line, is passed through
Enter the detection time section that first detection-phase includes after first predetermined setting time；First set voltage is first
Positive voltage；
In the detection time section that first detection-phase includes, the external compensation line is controlled to be in floating state, to
The data write-in control terminal provides the first data write-in control voltage, so that the gate source voltage for obtaining data writing transistor is more than
The threshold voltage of the data writing transistor, the first external compensation control voltage is provided to the external compensation control terminal, so that
The gate source voltage for obtaining external compensation controlling transistor is more than the threshold voltage of the external compensation controlling transistor, to the data wire
The first data voltage is provided, to cause the gate source voltage of driving transistor to be less than the threshold voltage of the driving transistor, to described
Power voltage input terminal provides the first supply voltage, after the first predetermined detection time, detects on the external detection line
Whether voltage, the device that judging the external compensation image element circuit according to the voltage includes break down；The first data electricity
Press as the second positive voltage.
In practical operation, as shown in figure 3, being carried in the first setting time section t11 that the first detection-phase includes for Sense
The first set voltage supplied can be 2V；First setting time (namely first setting time section duration) can be chosen for
17us (microsecond)；
Within the 10us times of t11 at the beginning, -5.5V is provided for G1, to cause T1 gate source voltage to be less than T1 threshold value
Voltage, -5.5V is provided for G2, to cause T3 gate source voltage to be less than T3 threshold voltage；
In t11, from 10us to 17us, for G1 provide voltage 22V is risen to by -5.5V, for G2 provide voltage by -
5.5V rises to 22V；
In the first detection time section t12 that the first detection-phase includes, control Sense is in floating state, shown in Fig. 3
Embodiment in, the first detection time can be chosen for 263us-272us, shown in dotted line position detection Sense on electricity
Pressure；
It is that the first data write-in control voltage that G1 is provided can be 22V, to cause T1 grid as shown in figure 3, in t12
Threshold voltage (when T1 do not break down, T1 conducting) of the source voltage more than T1, the first external compensation control electricity provided for G2
Pressure can be 22V, to cause threshold voltage (when T3 do not break down, T3 conducting) of the T3 gate source voltage more than T3, be
The first data voltage that Data is provided can be 1V, when T1 and T3 is turned on, can cause for Data the first data voltages provided
T2 gate source voltage is less than T1 threshold voltage, and when T2 does not break down, T2 is closed；The the first power supply electricity provided for ELVDD
Pressure can be 8V, and in figure 3, grid sign control Sense is in floating state.
In practical operation, the first data voltage can be set smaller than the first set voltage；It is described according to the voltage
The device that judging the external compensation image element circuit the includes step that whether breaks down includes：When the external detection detected
When voltage on line is between first data voltage and first set voltage, the external compensation pixel is determined
It is short-circuit between the both ends for the storage capacitance that circuit includes.
In the first detection time section t12 that the first detection-phase includes, first end and the storage as storage capacitance Cst
When short-circuit between electric capacity Cst the second end, namely between driving transistor T2 grid G and driving transistor T2 source S it is short
Road, now T2 closings, T1 and T3 conductings, then the storage capacitance Cst that the first data voltage on data wire passes through two terminal shortcircuits are
On Sense electric capacity Cs charging, now the voltage on the Sense for after the first predetermined detection time, detecting to obtain between
Between first data voltage and the first set voltage.
In practical operation, the external compensation image element circuit is also connected with low-voltage input, the low-voltage input
The low-voltage of end input is less than first set voltage；It is described to judge that the external compensation image element circuit includes according to the voltage
The device step that whether breaks down also include：When between the voltage on the external detection line detected and the low-voltage
The absolute value of difference when being less than the first predetermined voltage difference, determine the light-emitting component that the external compensation image element circuit includes
The first pole and the light-emitting component the second pole between short circuit.
In the first detection time section t12 that the first detection-phase includes, when the light-emitting element E L luminous member of the first pole and this
When short-circuit between part EL the second pole, the current potential of driving transistor T2 source S is equal to the low of low-voltage input input
Voltage, T3 conductings, then the voltage on Sense is close to the low-voltage, namely the voltage on the external detection line detected with
The absolute value of difference between the low-voltage is less than the first predetermined voltage difference；The value of the first predetermined voltage difference can
To be selected according to actual conditions, for example, can be 0.3V, but it be not limited.
In the specific implementation, first supply voltage can be set greater than first set voltage；Described
The device that judging the external compensation image element circuit according to the voltage the includes step that whether breaks down also includes：When the institute detected
State the voltage on external detection line and be more than first set voltage, and the voltage on the external detection line detected and institute
When stating the difference between the first set voltage more than the first predetermined voltage difference and being less than the second predetermined voltage difference, institute is determined
The driving transistor that the power voltage input terminal that stating external compensation image element circuit includes includes with the external compensation image element circuit
It is short-circuit between grid；The first predetermined voltage difference is the first positive electricity pressure difference, and the second predetermined voltage difference is second
Positive electricity pressure difference, the second predetermined voltage difference are more than the first predetermined voltage difference.
In the first detection time section t12 that the first detection-phase includes, as power voltage input terminal ELVDD and crystal is driven
When short-circuit between pipe T2 grid G, namely it is short-circuit between driving transistor T2 drain electrode and driving transistor T2 grid G when,
So that the first higher supply voltage that T2 grid access provides for ELVDD, so as to which T2 is turned on, is given by the T3 of conducting
Electric capacity Cs chargings on Sense, are turned on, G current potential is influenceed by less first data voltage of magnitude of voltage, made yet with T1
It must pass through for the first predetermined detection time, although the voltage on the Sense for detecting to obtain raises compared to the first set voltage,
Elevated amplitude is relatively little.That is, the difference detected between voltage and first set voltage on obtained Sense is big
In the first predetermined voltage difference and when being less than the second predetermined voltage difference, the electricity that the external compensation image element circuit includes is determined
It is short-circuit between the grid for the driving transistor that source voltage input end and the external compensation image element circuit include；Described first predetermined electricity
Pressure difference and the second predetermined voltage difference are all for just, the second predetermined voltage difference is more than the first predetermined voltage difference；Described first
The value of the value of predetermined voltage difference and the second predetermined voltage difference can be chosen according to actual conditions, for example, described
First predetermined voltage difference can be 0.2V, and the second predetermined voltage difference can be 1V, but be not limited.
The step specifically, whether the device for judging the external compensation image element circuit according to the voltage and including breaks down
Suddenly also include：When the voltage on the external detection line detected is more than first set voltage, and detect described
The difference between voltage and first set voltage on external detection line is more than the second predetermined voltage difference and less than the 3
During predetermined voltage difference, short circuit between the data write-in control terminal and the grid of the driving transistor is determined；Described
Three predetermined voltage differences are the 3rd positive electricity pressure difference, and the 3rd predetermined voltage difference is more than the second predetermined voltage difference.
In the first detection time section t12 that the first detection-phase includes, when data write control terminal G1 and driving transistor
It is short-circuit between T2 grid, namely short circuit between data writing transistor T1 grid and the data writing transistor T1 drain electrode
When, because the magnitude of voltage of the first data write-in control voltage provided for G1 is larger, then driving transistor T2 grid accesses
Voltage is also larger, is that the first supply voltage that ELVDD is provided is by the T2 of conducting and the T3 of conducting so as to control T2 to turn on
Cs chargings on Sense so that after the first predetermined detection time, detect voltage on obtained Sense with it is described
When difference between first set voltage is more than the second predetermined voltage difference and is less than the 3rd predetermined voltage difference, determine described
Data write short circuit between control terminal and the grid of the driving transistor；The 3rd predetermined voltage difference is just, the 3rd is pre-
Determine voltage difference and be more than the second predetermined voltage difference；The value of the 3rd predetermined voltage difference can be selected according to actual conditions
Take, for example, the 3rd predetermined voltage difference can be 3V, but be not limited.
The step specifically, whether the device for judging the external compensation image element circuit according to the voltage and including breaks down
Suddenly also include：
When the voltage on the external detection line detected is more than first set voltage, and detect described outer
When the difference between voltage and first set voltage in portion's detection line is more than the 4th predetermined voltage difference, determine described
The short-circuit and/or storage capacitance is breakdown between the grid of driving transistor and the drain electrode of the driving transistor；Described 4th
Predetermined voltage difference is the 4th positive electricity pressure difference, and the 4th predetermined voltage difference is more than the 3rd predetermined voltage difference；
It is exhausted when the voltage difference between the voltage on the external detection line detected and first set voltage
When being less than the 5th predetermined voltage difference to value, not short-circuit, described light-emitting component between the both ends of the storage capacitance is determined
Not short-circuit, described power voltage input terminal and the grid of the driving transistor between first pole and the second pole of the light-emitting component
Between not short-circuit, described driving transistor between not short-circuit, data write-in control terminal and the grid of the driving transistor
Grid and the driving transistor drain electrode between the not short-circuit and storage capacitance it is not breakdown；5th predetermined voltage difference
It is worth for the 5th positive electricity pressure difference.
In the first detection time section t12 that the first detection-phase includes, when driving transistor T2 source S and driving crystal
When short-circuit between pipe T2 drain electrode, T2 source S is accessed for the first supply voltage that ELVDD is provided, the first supply voltage is direct
T3 by conducting is that the Cs on Sense charges, now because the first larger supply voltage is directly charged by T3 for Cs, then
Voltage on Sense can be larger；And when Cst is breakdown, the source electrode equivalent to T2 and short-circuit (concrete principle between T2 drain electrode
Will be described hereinafter), for ELVDD the first supply voltage access T2 provided source S, the first supply voltage directly passes through conducting
T3 be Sense on Cs charging, now due to the first larger supply voltage directly by T3 be Cs charging, then on Sense
Voltage also can be larger；So as to be more than the first set voltage when the voltage on the Sense detected, and on the Sense detected
Voltage and first set voltage between difference when being more than the 4th predetermined voltage difference, determine the driving transistor
Grid and the driving transistor drain electrode between the short-circuit and/or storage capacitance it is breakdown；4th predetermined voltage difference
It is worth and is more than the 3rd predetermined voltage difference for the 4th positive electricity pressure difference, the 4th predetermined voltage difference；Described 4th is predetermined
The value of voltage difference can be chosen according to actual conditions, for example, the 4th predetermined voltage difference can be 3.3V, but not with
This is limited.
In embodiments of the present invention, storage capacitance Cst can be the electric capacity with four-layer structure, from the bottom up first layer gold
Category is the metal level to form ELVDD, and second layer metal is IGZO (indium gallium zinc oxide) layer of conductor from the bottom up, from lower past
Upper third layer metal is Source and drain metal level (SD layer), and the 4th layer of metal is ITO (tin indium oxide) layer from the bottom up, and Cst makes here
It is double-level-metal, IGZO is semiconductor, but makes its conductor by the bias of the supply voltage inputted by ELVDD, is made
For a pole of electrode, when Cst is breakdown, that is, three layer progress short circuit of the ELVDD metal level directly and above it are formed,
Thus direct short-circuit between the drain electrode equivalent to T2 and T2 source electrode.
And the first detection time section t12 included in the first detection-phase, when not short between the both ends of the storage capacitance
Not short-circuit, described power voltage input terminal and institute between second pole on road, the first pole of the light-emitting component and the light-emitting component
State not short between not short-circuit, the data write-in control terminal and the grid of the driving transistor between the grid of driving transistor
The not short-circuit and storage capacitance is not breakdown between the drain electrode on road, the grid of the driving transistor and the driving transistor
When,
Assuming that failure is not present in T1 and T3, then T2 grid accesses the first data voltage, and T2 is closed, then the electricity on Sense
Pressure is more or less the same compared with the first set voltage；
Assuming that when T1 and/or T3 can not be opened correctly, the path charged in the absence of any electric capacity on Sense, then
Sense voltage is more or less the same compared with the first set voltage, that is, by first and predetermined detection time, detects
The absolute value of the voltage difference between voltage and first set voltage on Sense is less than the 5th predetermined voltage difference, institute
The 5th predetermined voltage difference is stated as just, the value of the 5th predetermined voltage difference can be chosen according to actual conditions, for example, institute
It can be 0.2V to state the 5th predetermined voltage difference, but is not limited.
(Fig. 4 shows the obtained voltage on the first detection-phase Sense of emulation) as shown in Figure 4, when for external compensation
When each voltage that image element circuit provides is as shown in Figure 3, in position (namely first included in the first detection-phase shown in dotted line
Detection time section, after the first predetermined detection time, in the position shown in dotted line, namely on 290.21us, detection Sense
Voltage),
As shown in figure 5, when short-circuit between Cst first end and Cst the second end, the voltage on Sense that detects
Equal to 1.63V (waveform for the voltage on Sense for now emulating to obtain is the W11 in Fig. 4)；
As shown in fig. 6, when short-circuit (in figure 6, using EL as organic light-emitting diodes between EL the first pole and EL the second pole
Exemplified by pipe OLED, EL the first extremely OLED anode, EL the second extremely OLED negative electrode) when, on the Sense that detects
Voltage is equal to 856mV (waveform for the voltage on Sense for now emulating to obtain is the W12 in Fig. 4)；
As shown in fig. 7, when short-circuit between power voltage input terminal ELVDD and driving transistor T2 grid G, detect
Sense on voltage be equal to 2.46V (waveform for now emulating the voltage on obtained Sense is the W13 in Fig. 4)；
As shown in figure 8, when data write-in control terminal G1 and driving transistor T2 grid G between it is short-circuit when, detect
Voltage on Sense is equal to 4.4V (waveform for the voltage on Sense for now emulating to obtain is the W14 in Fig. 4)；
When short-circuit (as shown in Figure 9) between the drain electrode of T2 source electrode and T2 and/or Cst breakdown (as shown in Figure 10),
The voltage on Sense detected is equal to 6.39V, and (waveform for the voltage on Sense for now emulating to obtain is in Fig. 4
W15)；
When T1 can not be opened normally, T3 can not be opened normally, or failure is not present in T1 and T3, on the Sense that detects
Voltage be equal to 2V (waveform for now emulating the voltage on obtained Sense is the W16 in Fig. 4).
In Fig. 4, further it is shown that the data electricity on the first detection-phase G1 current potential Vg1, G2 current potential Vg2, Data
Press the supply voltage VDD of Vdata and ELVSS inputs.
The device fault of above several types can be detected by the Pattern shown in Fig. 3, is detecting that dim spot is bad
When can navigate to specific pixel, repaired with reference to method for maintaining to bad, improve yields.But can not detect with
Lower fault type：T1 and/or T3 can not be opened normally, therefore devise second of pattern, be specifically described below.
Specifically, not short-circuit, the described luminous member between the both ends of the storage capacitance are determined in the first detection-phase
Not short-circuit, described power voltage input terminal and the driving transistor between first pole of part and the second pole of the light-emitting component
Not short-circuit, described driving is brilliant between not short-circuit between grid, described data write-in control terminal and the grid of the driving transistor
When the not short-circuit and storage capacitance is not breakdown between the grid of body pipe and the drain electrode of the driving transistor, in the described first inspection
The second detection-phase is additionally provided with after the survey stage, the electrical detection method of the device fault also includes：
In the setting time section that the second detection-phase includes, the second set voltage is provided to the external compensation line, is passed through
Enter the detection time section that second detection-phase includes after second predetermined setting time；
In the detection time section that second detection-phase includes, the external compensation line is controlled to be in floating state, to
The data write-in control terminal provides the second data write-in control voltage, to cause the gate source voltage of the data writing transistor
More than the threshold voltage of the data writing transistor, the second external compensation control voltage is provided to the external compensation control terminal,
To cause the gate source voltage of the external compensation controlling transistor to be more than the threshold voltage of the external compensation controlling transistor, to institute
State data wire and the second data voltage is provided, to cause the gate source voltage of driving transistor to be more than the threshold value electricity of the driving transistor
Pressure, second source voltage is provided to the power voltage input terminal, after the second predetermined detection time, detect the outside inspection
Voltage on survey line；
It is exhausted when the voltage difference between the voltage on the external detection line detected and second set voltage
When being less than the 6th predetermined voltage difference to value, determine data writing transistor and/or external compensation controlling transistor can not be just
Really open；The 6th predetermined voltage difference is the 6th positive electricity pressure difference；
It is exhausted when the voltage difference between the voltage on the external detection line detected and second set voltage
When being more than the 7th predetermined voltage difference to value, the data writing transistor and the external compensation controlling transistor are determined not
Failure be present；The 7th predetermined voltage difference is the 7th positive electricity pressure difference；
The 7th predetermined voltage difference is more than the 6th predetermined voltage difference.
In practical operation, when have determined in the absence of the first detection-phase determine the storage capacitance both ends it
Between not short-circuit between the first pole of not short-circuit, described light-emitting component and the second pole of the light-emitting component, supply voltage input
Hold the grid of not short-circuit between the grid of the driving transistor, data write-in control terminal and the driving transistor it
Between not short-circuit between the grid of not short-circuit, described driving transistor and the drain electrode of the driving transistor and storage capacitance not by
During breakdown, in the detection time section that the second detection-phase includes, control the magnitude of voltage of the second data voltage larger, then when data are write
Enter transistor and when failure is not present in external compensation controlling transistor, T1, T2 and T3 are turned on, then second source voltage can pass through
The T2 of the conducting and T3 of conducting is the Cs chargings on Sense, then the voltage on Sense can raise, so as to which the voltage is put with second
Voltage difference between the voltage of position is more than the 7th predetermined voltage difference, and the 7th predetermined voltage difference is just, the 7th is predetermined electric
The value of pressure difference can be chosen according to actual conditions, for example, the 7th predetermined voltage difference can be 100mV, but not with
This is limited.
When data writing transistor and/or external compensation controlling transistor can not be opened correctly, in the absence of on Sense
The paths charged of Cs, therefore the absolute value of the difference between the voltage and the second set voltage on Sense should be less than
Six predetermined voltage differences, the 6th predetermined voltage difference is just, the value of the 6th predetermined voltage difference can be according to reality
Border situation is chosen, for example, the 6th predetermined voltage difference can be 10mV, but is not limited.
In practical operation, as shown in figure 11, in the second setting time section t21 that the second detection-phase includes, to Sense
The second set voltage provided can be 0V；In t21, -5.5V is provided for G1, to cause T1 gate source voltage to be less than T1 threshold value
Voltage, -5.5V is provided for G2, to cause T3 gate source voltage to be less than T3 threshold voltage；
Within the 10us times of t21 at the beginning, -5.5V is provided for G1, to cause T1 gate source voltage to be less than T1 threshold value
Voltage, -5.5V is provided for G2, to cause T3 gate source voltage to be less than T3 threshold voltage；
In t21, from 10us to 17us, for G1 provide voltage 22V is risen to by -5.5V, for G2 provide voltage by -
5.5V rises to 22V；
In the second detection time section t22 that the second detection-phase includes, control Sense is in floating state, in Figure 11 institutes
In the embodiment shown, the second setting time can be chosen for 17us (microsecond), and the first detection time can be chosen for 76us-
80us, the voltage on the position detection Sense shown in dotted line；
As shown in figure 11, it is that the first data write-in control voltage that G1 is provided can be 22V, to cause T1 grid in t22
Threshold voltage (when T1 in the absence of can not normally open the problem of, T1 conducting) of the source voltage more than T1, first provided for G2
External compensation control voltage can be 22V, with cause T3 gate source voltage more than T3 threshold voltage (when T3 be not present can not be just
During the problem of often opening, T3 conductings), it is that the first data voltage that Data is provided can be 10V, when T1 and T3 is opened, is
The first data voltage that Data is provided can cause T2 gate source voltage to be more than T1 threshold voltage, T2 conductings；There is provided for ELVDD
Second source voltage can be 24V, and in fig. 11, grid sign control Sense is in floating state.
(Figure 12 shows the obtained voltage on the Sense of the second detection-phase of emulation) as shown in figure 12, when for outside
When each voltage that compensation pixel circuit provides is as shown in figure 11, (namely include in the position shown in dotted line in the second detection-phase
The second detection time section, after the second predetermined detection time, in the position shown in dotted line, namely in 94us, detect Sense
On voltage),
When T1 and T3 can be opened normally, equal to 486mV, (now emulation obtains the voltage on Sense detected
Sense on voltage waveform be Figure 12 in W20)；
As shown in figure 13, when T1 can not be opened normally, the voltage on Sense detected (is now imitated equal to 1.15fV
The waveform of the voltage on Sense really obtained is the W22 in Figure 12)；
As shown in figure 14, when T3 can not be opened normally, the voltage on Sense detected (now emulates equal to -57nV
The waveform of the obtained voltage on Sense is the W23 in Figure 12).
In fig. 12, further it is shown that the data electricity on the second detection-phase G1 current potential Vg1, G2 current potential Vg2, Data
Press the supply voltage VDD of Vdata and ELVSS inputs.
The embodiment of the present invention is tied detection by the electrical detection of the failure to each device in outside compensation pixel circuit
Fruit is stored in register, available after bad species, quantity and position are counted then by testing result and bad matching
The data detected establish a figure, so can intuitively observe the product yield gone out by equipment processing procedure, then combine
The Study on Relative Factors such as technological process and equipment, so as to be improved, lift yields；And external compensation program can be optimized
Dim spot is shielded, prevents the reason for bad at dim spot from causing neighboring pixel to show the risk that exception and defect expand.
In the specific implementation, in embodiments of the present invention, each signal wire to be connected with external compensation pixel-driving circuit
The order that corresponding voltage is provided with each signal end is as follows：
In the first detection-phase, the voltage shown in Fig. 3 is provided to each signal wire and each signal end；
In the second detection-phase, the voltage shown in Figure 11 is provided to each signal wire and each signal end；
In the preferred case, the first detection-phase and the second detection-phase are set gradually, and can be incited somebody to action according to such a detection ordering
Bad classification detection.The electrical detection device of device fault described in the embodiment of the present invention, applied to external compensation image element circuit,
The external compensation image element circuit and data write-in control terminal, data wire, power voltage input terminal, external compensation control terminal and outer
Portion's compensating line connection, the electrical detection device of the device fault include set unit, and status control unit, voltage provide single
Member, detection unit and breakdown judge unit, wherein,
The set unit is used for the setting time section included in a detection-phase, and a pre- fixation is provided to outside compensating line
Position voltage；
The status control unit is used for the detection time section included in the detection-phase, controls at the external compensation line
In floating state；
The voltage providing unit is used to provide tentation data voltage to the data wire, to the power voltage input terminal
Predetermined power source voltage is provided, tentation data write-in control voltage is provided to data write-in control terminal, to the external compensation
Control terminal provides predetermined external compensation control voltage, and after the predetermined detection time, detection control is sent to the detection unit
Signal；
The detection unit is used to after the detection control signal is received detect the voltage on the external compensation line；
The breakdown judge unit is used to detect the voltage on the obtained external compensation line according to the detection unit
Whether the device that judging the external compensation image element circuit includes breaks down.
Display module described in the embodiment of the present invention, including external compensation image element circuit, in addition to above-mentioned device fault
Electrical detection device.
In practical operation, the display module can be OLED display modules.
Described above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, on the premise of principle of the present invention is not departed from, some improvements and modifications can also be made, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of electrical detection method of device fault, applied to external compensation image element circuit, the external compensation image element circuit
It is connected with data write-in control terminal, data wire, power voltage input terminal, external compensation control terminal and external compensation line, its feature
It is, a detection-phase includes setting time section and detection time section, and the electrical detection method of the device fault includes：
In the setting time section that a detection-phase includes, a predetermined set voltage is provided to the external compensation line, by predetermined
Enter the detection time section that the detection-phase includes after setting time；
In the detection time section that the detection-phase includes, the external compensation line is controlled to be in floating state, to the data wire
Tentation data voltage is provided, predetermined power source voltage is provided to the power voltage input terminal, is carried to data write-in control terminal
Control voltage is write for tentation data, external compensation control voltage is provided to the external compensation control terminal, by predetermined detection
After time, the voltage on the external compensation line is detected, and judge what the external compensation image element circuit included according to the voltage
Whether device breaks down.
2. the electrical detection method of device fault as claimed in claim 1, it is characterised in that specifically include：In the first detection
The setting time section that stage includes, the first set voltage is provided to the external compensation line, after the first predetermined setting time
The detection time section included into first detection-phase；First set voltage is the first positive voltage；
In the detection time section that first detection-phase includes, the external compensation line is controlled to be in floating state, to described
Data write-in control terminal provides the first data write-in control voltage, so that the gate source voltage for obtaining data writing transistor is more than the number
According to the threshold voltage of writing transistor, the first external compensation control voltage is provided to the external compensation control terminal, it is outer to cause
The gate source voltage of portion's compensation controlling transistor is more than the threshold voltage of the external compensation controlling transistor, is provided to the data wire
First data voltage, to cause the gate source voltage of driving transistor to be less than the threshold voltage of the driving transistor, to the power supply
Voltage input end provides the first supply voltage, after the first predetermined detection time, detects the voltage on the external detection line,
Whether the device that judging the external compensation image element circuit according to the voltage includes breaks down；First data voltage is the
Two positive voltages.
3. the electrical detection method of device fault as claimed in claim 2, it is characterised in that the first data voltage is less than first
Set voltage；Whether the device for judging the external compensation image element circuit according to the voltage and including breaks down step bag
Include：When the voltage on the external detection line detected is between first data voltage and first set voltage
When, determine short circuit between the both ends for the storage capacitance that the external compensation image element circuit includes.
4. the electrical detection method of device fault as claimed in claim 3, it is characterised in that the external compensation image element circuit
Also it is connected with low-voltage input, the low-voltage of the low-voltage input input is less than first set voltage；Described
The device that judging the external compensation image element circuit according to the voltage the includes step that whether breaks down also includes：When the institute detected
When stating the absolute value of the difference between the voltage on external detection line and the low-voltage and being less than the first predetermined voltage difference, judge
It is short-circuit between first pole of the light-emitting component included to the external compensation image element circuit and the second pole of the light-emitting component.
5. the electrical detection method of device fault as claimed in claim 4, it is characterised in that first supply voltage is more than
First set voltage；Whether the device for judging the external compensation image element circuit according to the voltage and including breaks down
Step also includes：When the voltage on the external detection line detected is more than first set voltage, and the institute detected
State difference between the voltage on external detection line and first set voltage and be more than the first predetermined voltage difference and less than the
During two predetermined voltage differences, power voltage input terminal and the external compensation picture that the external compensation image element circuit includes are determined
It is short-circuit between the grid for the driving transistor that plain circuit includes；The first predetermined voltage difference is the first positive electricity pressure difference, institute
It is the second positive electricity pressure difference to state the second predetermined voltage difference, and the second predetermined voltage difference is more than first predetermined voltage difference
Value.
6. the electrical detection method of device fault as claimed in claim 5, it is characterised in that described that institute is judged according to the voltage
The device that stating external compensation image element circuit the includes step that whether breaks down also includes：When on the external detection line detected
Voltage be more than first set voltage, and the voltage on the external detection line detected and first set voltage
Between difference be more than the second predetermined voltage difference and when being less than the 3rd predetermined voltage difference, determine the data write-in and control
Short circuit between end and the grid of the driving transistor；The 3rd predetermined voltage difference is the 3rd positive electricity pressure difference, described
Three predetermined voltage differences are more than the second predetermined voltage difference.
7. the electrical detection method of device fault as claimed in claim 6, it is characterised in that described that institute is judged according to the voltage
The device that stating external compensation image element circuit the includes step that whether breaks down also includes：
When the voltage on the external detection line detected is more than first set voltage, and what is detected described outside examines
When the difference between voltage and first set voltage on survey line is more than the 4th predetermined voltage difference, the driving is determined
The short-circuit and/or storage capacitance is breakdown between the grid of transistor and the drain electrode of the driving transistor；Described 4th is predetermined
Voltage difference is the 4th positive electricity pressure difference, and the 4th predetermined voltage difference is more than the 3rd predetermined voltage difference；
When the absolute value of the voltage difference between the voltage on the external detection line detected and first set voltage
During less than the 5th predetermined voltage difference, first of not short-circuit, described light-emitting component between the both ends of the storage capacitance is determined
Between pole and the second pole of the light-emitting component between not short-circuit, described power voltage input terminal and the grid of the driving transistor
The grid of not short-circuit, described driving transistor between not short-circuit, described data write-in control terminal and the grid of the driving transistor
The not short-circuit and storage capacitance is not breakdown between pole and the drain electrode of the driving transistor；The 5th predetermined voltage difference is
5th positive electricity pressure difference.
8. the electrical detection method of device fault as claimed in claim 7, it is characterised in that judge when in the first detection-phase
To between the both ends of the storage capacitance between the first pole of not short-circuit, described light-emitting component and the second pole of the light-emitting component not
Not short-circuit between short-circuit, described power voltage input terminal and the grid of the driving transistor, described data write-in control terminal and
Between the grid of the driving transistor between the grid of not short-circuit, described driving transistor and the drain electrode of the driving transistor not
When short-circuit and described storage capacitance is not breakdown, the second detection-phase is additionally provided with after first detection-phase, it is described
The electrical detection method of device fault also includes：
In the setting time section that the second detection-phase includes, the second set voltage is provided to the external compensation line, by second
Enter the detection time section that second detection-phase includes after predetermined setting time；
In the detection time section that second detection-phase includes, the external compensation line is controlled to be in floating state, to described
Data write-in control terminal provides the second data write-in control voltage, to cause the gate source voltage of the data writing transistor to be more than
The threshold voltage of the data writing transistor, the second external compensation control voltage is provided to the external compensation control terminal, so that
The gate source voltage for obtaining the external compensation controlling transistor is more than the threshold voltage of the external compensation controlling transistor, to the number
The second data voltage is provided according to line, to cause the gate source voltage of driving transistor to be more than the threshold voltage of the driving transistor, to
The power voltage input terminal provides second source voltage, after the second predetermined detection time, detects the external detection line
On voltage；
When the absolute value of the voltage difference between the voltage on the external detection line detected and second set voltage
During less than the 6th predetermined voltage difference, determining data writing transistor and/or external compensation controlling transistor can not correctly beat
Open；The 6th predetermined voltage difference is the 6th positive electricity pressure difference；
When the absolute value of the voltage difference between the voltage on the external detection line detected and second set voltage
During more than the 7th predetermined voltage difference, determine the data writing transistor and the external compensation controlling transistor is not present
Failure；The 7th predetermined voltage difference is the 7th positive electricity pressure difference；
The 7th predetermined voltage difference is more than the 6th predetermined voltage difference.
9. a kind of electrical detection device of device fault, applied to external compensation image element circuit, the external compensation image element circuit
It is connected with data write-in control terminal, data wire, power voltage input terminal, external compensation control terminal and external compensation line, its feature
It is, the electrical detection device of the device fault includes set unit, and status control unit, voltage providing unit, detection are single
Member and breakdown judge unit, wherein,
The set unit is used for the setting time section included in a detection-phase, and a predetermined set electricity is provided to outside compensating line
Pressure；
The status control unit is used for the detection time section included in the detection-phase, controls the external compensation line to be in floating
Dummy status；
The voltage providing unit is used to provide tentation data voltage to the data wire, is provided to the power voltage input terminal
Predetermined power source voltage, tentation data write-in control voltage is provided to data write-in control terminal, is controlled to the external compensation
End provides predetermined external compensation control voltage, and after the predetermined detection time, detection control signal is sent to the detection unit；
The detection unit is used to after the detection control signal is received detect the voltage on the external compensation line；
The voltage on the external compensation line that the breakdown judge unit is used to detect to obtain according to the detection unit judges
Whether the device that the external compensation image element circuit includes breaks down.
10. a kind of display module, including external compensation image element circuit, it is characterised in that also including device as claimed in claim 9
The electrical detection device of part failure.
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