CN107508585A - The electric-controlled plate and air conditioner of switching device encapsulating structure, air conditioner - Google Patents
The electric-controlled plate and air conditioner of switching device encapsulating structure, air conditioner Download PDFInfo
- Publication number
- CN107508585A CN107508585A CN201710725884.0A CN201710725884A CN107508585A CN 107508585 A CN107508585 A CN 107508585A CN 201710725884 A CN201710725884 A CN 201710725884A CN 107508585 A CN107508585 A CN 107508585A
- Authority
- CN
- China
- Prior art keywords
- hemt
- switching device
- mosfet
- encapsulating structure
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a kind of switching device encapsulating structure, the electric-controlled plate and air conditioner of air conditioner, switching device encapsulating structure includes：Substrate, the first hardware cloth wire frame is provided with substrate；HEMT, HEMT are arranged on the first hardware cloth wire frame by the way of upside-down mounting；The MOSFET being arranged on substrate, MOSFET connects with HEMT, wherein, source electrode as switching device after the grid of HEMT is connected with MOSFET source electrode, the source electrode of HEMT is connected with MOSFET drain electrode, grid of the MOSFET grid as switching device, drain electrode of the drain electrode of HEMT as switching device, the absolute value of MOSFET Vds magnitudes of voltage is equal with the absolute value of the Vgs magnitudes of voltage of HEMT, so as to bear high voltage and more energy efficient, it is more suitable for high frequency use, and driving design requirement can be reduced, the heat dispersion of HEMT part can also be increased.
Description
Technical field
The present invention relates to air-conditioner field, more particularly to a kind of derailing switch encapsulating structure part, a kind of electricity for air conditioner
Control plate and a kind of air conditioner.
Background technology
GaN device is described as third generation semiconductor devices, because of its excellent characteristic, has started to be applied to power electronics neck
Domain.GaN device in correlation technique can be divided into enhanced and two kinds of depletion type.
For enhanced GaN device, the rated voltage for the enhanced GaN device of monomer is larger, and maximum can reach
250V.But because the enhanced GaN of monomer driving voltage is larger, with its maximum gate source voltage (electricity between grid and source electrode
Pressure) relatively, such as the fully on driving voltage of the enhanced GaN device of monomer is 4.5V~5.5V, and its maximum gate source
Voltage is 6V, and therefore, enhanced GaN device is higher to driving design requirement, cause to drive design difficulty is larger, complexity compared with
Height, cost are higher.
For depletion type GaN device, monomer depletion type GaN drive voltage range is wider, can be -30~2V, device
Fully on driving voltage is -5V.But need negative pressure to turn off because depletion type GaN is normal open type device, during use, because
This has the straight-through potential danger of short circuit.
In addition, GaN device is installed using formal dress mode mostly in correlation technique, still, because the heat of GaN device produces
Raceway groove below grid, the heating of GaN device are distributed by substrate Si conduction, therefore, cause GaN device thermal resistance it is overall compared with
It is high.
The content of the invention
It is contemplated that at least solves one of technical problem in above-mentioned technology to a certain extent.Therefore, the present invention
One purpose be to propose a kind of high radiating and it is more energy efficient, be more suitable for the switching device that high frequency uses.
Second object of the present invention is to propose a kind of electric-controlled plate for air conditioner.
Third object of the present invention is to propose a kind of air conditioner.
To reach above-mentioned purpose, first aspect present invention embodiment proposes a kind of switching device encapsulating structure, including：Base
Plate, the first hardware cloth wire frame is provided with the substrate；HEMT, the HEMT are adopted
It is arranged on the mode of upside-down mounting on the first hardware cloth wire frame；The MOSFET being arranged on the substrate, the MOSFET
Connected with the HEMT, wherein, the grid of the HEMT is with the MOSFET's
Source electrode after source electrode is connected as switching device, the drain electrode phase of the source electrode of the HEMT and the MOSFET
Even, grid of the grid of the MOSFET as the switching device, the drain electrode of the HEMT is as institute
State the drain electrode of switching device, the absolute value of the Vds magnitudes of voltage of the MOSFET and the Vgs electricity of the HEMT
The absolute value of pressure value is equal.
The switching device encapsulating structure proposed according to embodiments of the present invention, the grid of HEMT with
Source electrode after MOSFET source electrode is connected as switching device, the source electrode of HEMT and MOSFET drain electrode phase
Even, grid of the MOSFET grid as switching device, the drain electrode to drain as switching device of HEMT,
The absolute value of MOSFET Vds magnitudes of voltage is equal with the absolute value of the Vgs magnitudes of voltage of HEMT.Thus, originally
The switching device of inventive embodiments, by the way that MOSFET is connected with HEMT, high voltage can be born and more saved
High frequency use, can be more suitable for, and driving design requirement can be reduced, makes this device and Si devices simultaneous well using above having
Capacitive, cost is effectively reduced, can also prevent the dangerous generation that short circuit is straight-through.In addition, HEMT uses upside-down mounting
Mode be arranged on the first hardware cloth wire frame, so as to increase the heat dispersion of HEMT part, reduce high
The thermal resistance of electron mobility transistor.
In addition, the switching device proposed according to the above embodiment of the present invention can also have technical characteristic additional as follows：
According to one embodiment of present invention, the second hardware cloth wire frame is additionally provided with the substrate, wherein, it is described
MOSFET is arranged on the second hardware cloth wire frame.
According to one embodiment of present invention, described switching device encapsulating structure also includes thermal insulation layer, the thermal insulation layer
It is arranged between the first hardware cloth wire frame and the second hardware cloth wire frame to reduce the HEMT
The heat of the MOSFET is disturbed.
According to one embodiment of present invention, the first hardware cloth wire frame and the second hardware cloth wire frame are by copper material
Material, copper tin plated materials or copper silver coating material are made.
According to one embodiment of present invention, the MOSFET is Si base low pressure MOSFET.
According to one embodiment of present invention, the HEMT is depletion type high pressure high electron mobility
Transistor.
According to one embodiment of present invention, the HEMT and the MOSFET integral packagings.
According to one embodiment of present invention, the HEMT is GaN HEMTs.
To reach above-mentioned purpose, second aspect of the present invention embodiment proposes a kind of electric-controlled plate for air conditioner, including
Described switching device encapsulating structure.
The electric-controlled plate for air conditioner proposed according to embodiments of the present invention, the performance of electric-controlled plate can be improved.
To reach above-mentioned purpose, third aspect present invention embodiment proposes a kind of air conditioner, including described is used for sky
Adjust the electric-controlled plate of device.
The air conditioner proposed according to embodiments of the present invention, the performance of air conditioner can be improved.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams according to the switching device encapsulating structure of one embodiment of the invention；
Fig. 2 is the structural representation according to the switching device encapsulating structure of one embodiment of the invention；
Fig. 3 is the installation of HEMT in the switching device encapsulating structure according to one embodiment of the invention
Schematic diagram；
Fig. 4 is the structural representation according to the switching device encapsulating structure of another embodiment of the present invention；
Fig. 5 is the schematic diagram according to the external structure of the switching device encapsulating structure of one embodiment of the invention.
Fig. 6 be according to HEMT in the switching device encapsulating structure of one embodiment of the invention and
MOSFET fundamental diagram；
Fig. 7 be according to HEMT in the switching device encapsulating structure of one embodiment of the invention and
The schematic diagram of MOSFET opening process；
Fig. 8 be according to HEMT in the switching device encapsulating structure of one embodiment of the invention and
The schematic diagram of MOSFET turn off process.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and is not considered as limiting the invention.
Below in conjunction with the accompanying drawings come describe the switching device encapsulating structure of the embodiment of the present invention, for air conditioner electric-controlled plate with
And air conditioner.
Fig. 1 is the circuit theory diagrams according to the switching device encapsulating structure of the embodiment of the present invention.As Figure 1-4, this hair
The switching device 100 of bright embodiment includes：Substrate 110, HEMT 120 and MOSFET130.
Wherein, as shown in figure 4, being provided with the first hardware cloth wire frame 140 on substrate 110；As shown in figure 3, high electron mobility
Rate transistor 120 is arranged on the first hardware cloth wire frame 140 by the way of upside-down mounting, specifically, HEMT
120 are welded on the first hardware cloth wire frame 140 by the way of upside-down mounting, so as to increase HEMT 120
The heat dispersion divided.
It should be appreciated that HEMT 120 is planar structure device, it generates heat in the upper surface of device
It is the most serious, and wiring frame is metal structure, has good thermal conductivity, thus, HEMT 120 uses
The mode of dress, which is arranged on the first hardware cloth wire frame 140, may be such that the thermal diffusivity of the part of HEMT 120 is more preferable.
As shown in Figure 1-2, MOSFET130 is arranged on substrate 110, MOSFET130 and HEMT
120 series connection, wherein, the grid G 1 of HEMT 120 is used as derailing switch after being connected with MOSFET130 source S 2
The source S of part 100, the source S 1 of HEMT 120 are connected with MOSFET130 drain D 2, MOSFET130's
Grid G of the grid G 2 as switching device 100, the leakage of the drain D 1 of HEMT 120 as switching device 100
The absolute value phase of the absolute value of pole D, MOSFET130 Vds magnitudes of voltage and the Vgs magnitudes of voltage of HEMT 120
Deng.
It should be noted that MOSFET130 Vds magnitudes of voltage can refer between MOSFET130 drain D 2 and source electrode D2
Magnitude of voltage, the Vgs magnitudes of voltage of HEMT 120 can refer to grid G 1 and the source of HEMT 120
Magnitude of voltage between the S1 of pole.
That is, in inventive embodiments, MOSFET130 can be connected with structure with HEMT 120
Global switch device 100 is produced, i.e., the grid G 1 of HEMT 120 is connected with MOSFET130 source S 2,
And the source S 1 of HEMT 120 is connected with MOSFET130 drain D 2, MOSFET130 grid G 2 is made
For the grid G of switching device 100, the source S of MOSFET130 source S 2 as switching device 100, high electron mobility crystal
Drain D of the drain D 1 of pipe 120 as switching device 100.Thus, high-tension switching device 100 is constructed.
Also, by the way that the grid G 1 of HEMT 120 is connected with MOSFET130 source S 2, it can make
It is equal with the negative value of the Vgs magnitudes of voltage of HEMT 120 to obtain MOSFET130 Vds magnitudes of voltage, i.e.,
MOSFET130 Vds magnitudes of voltage are equal with the-Vgs magnitudes of voltage of HEMT 120, thus, it is possible to be high electronics
Mobility transistor 120 provides necessary back bias voltage, to realize the shut-off of HEMT 120.
According to this one embodiment of the present of invention, as shown in figure 4, being additionally provided with the second hardware cloth wire frame on substrate 110
150, wherein, MOSFET130 is arranged on the second hardware cloth wire frame 150.Specifically, MOSFET130 can be welded on the second gold medal
Belong on wiring frame 150, so as to increase the heat dispersion of MOSFET130 parts.
In the specific example of the present invention, the first hardware cloth wire frame 140 and the second hardware cloth wire frame 150 can be by copper materials
Material, copper tin plated materials or the materials such as copper is silver-plated are made, and thus the first hardware cloth wire frame 140 and the second hardware cloth wire frame 150 can be by
Copper product or copper plating material, these materials have good thermal diffusivity, may be such that the He of HEMT 120
MOSFET130 heat dispersion is more preferable.
Further, according to one embodiment of present invention, as illustrated in figures 4-5, switching device encapsulating structure also include every
Thermosphere 160, thermal insulation layer 160 are arranged between the first hardware cloth wire frame 140 and the second hardware cloth wire frame 150 and moved with reducing high electronics
Shifting rate transistor 120 is disturbed MOSFET130 heat.
That is, first hardware cloth wire frame 140 is corresponding with MOSFET130 corresponding to HEMT 120
The second hardware cloth wire frame 150 between be provided with thermal insulation layer 160, the thermal insulation layer 160 can completely cut off HEMT
120 couples of MOSFET130 heat transfer.
Further, according to one embodiment of present invention, as shown in figure 5, the He of HEMT 120
MOSFET130 can integral packaging.Specifically, switching device encapsulating structure have three electrodes be respectively source S, grid G and
Drain D, and the profile of switching device encapsulating structure, it is, HEMT 120 is right with MOSFET difference
Thermal insulation layer 160 is provided between the first hardware cloth wire frame 140 the second hardware cloth wire frame 150 corresponding with MOSFET130 answered.
Thus, it is right to reduce HEMT 120 for the switching device encapsulating structure of the embodiment of the present invention
MOSFET130 heat interference, and as a result of GaN semiconductors, switching device is more energy efficient, is more suitable for high frequency use.
According to the specific embodiment of the present invention, MOSFET130 can be Si base low pressure MOSFET.High electron mobility is brilliant
Body pipe 120 can be depletion type high pressure HEMT.More specifically, HEMT can be that GaN is high
Electron mobility transistor.
That is, Si base low pressure MOSFET can be connected to construct with depletion type GaN HEMTs
Go out the switching device 100 of high-tension GaN switching devices, the i.e. embodiment of the present invention.
The specific mistake opened, turned off of the switching device 100 of the embodiment of the present invention is described in detail in 6-8 below in conjunction with the accompanying drawings
Journey.Wherein, as shown in fig. 6, having first electric capacity C11, MOSFET130 source between MOSFET130 grid G 2 and source S 2
With the 3rd electric capacity C13 between grid G 2 and drain D 2 with second electric capacity C12, MOSFET130 between pole S2 and drain D 2,
Also, have the 4th electric capacity C21, high electron mobility brilliant between the grid G 1 and source S 1 of HEMT 120
There is grid G 1 and the leakage of the 5th electric capacity C22, HEMT 120 between the source S 1 and drain D 1 of body pipe 120
There is the 6th electric capacity C23 between the D1 of pole.
According to Fig. 6 and Fig. 7 embodiment, the opening process of switching device 100 is as follows：
First stage S1-1：The first electric capacity C11 between MOSFET130 grid G 2 and source S 2 charges to first threshold
Voltage Vth, the first electric capacity C1 voltage change follow RC charge rules, and this stage, two devices are MOSFET130 and high electronics
Mobility transistor 120 does not produce conducting channel.
It should be noted that first threshold voltage Vth can be MOSFET130 threshold voltage, more specifically, first threshold
Voltage Vth can be Si base low pressure MOSFET threshold voltage.
Second stage S1-2：The magnitude of voltage of voltage V2gs between MOSFET130 grid G 2 and source S 2 is more than first
Threshold voltage vt h, MOSFET130 work in saturation region, and the first electric capacity C11 gives the second electric capacity C12, the 3rd electric capacity C13 and the 4th
Electric capacity C21 discharges.
In this stage, unlike independent MOS FET, electric current is only in the raceway groove of the MOSFET130 in the embodiment of the present invention
The discharge current of electric capacity, no-load current are transferred in raceway groove, therefore, the grid voltage V1g of HEMT 120
Gradually increase, also not up to second threshold voltage.
It should be noted that second threshold voltage can be the threshold voltage of HEMT 120, more specifically
Ground, second threshold voltage can be the threshold voltage of depletion type GaN HEMTs.
Phase III S1-3：The voltage of voltage Vgs between the grid G 1 and source S 1 of HEMT 120
After value exceedes second threshold voltage, HEMT 120 is begun to turn on.This stage, load current start to cascade
Device drain shifts, i.e., is shifted to the drain D 1 of HEMT 120, the rate of change di/dt of drain current is controlled
In low pressure MOSFET130 working condition.
It should be appreciated that the grid resistance value of HEMT 120 is MOSFET130 conducting resistance,
So MOSFET driving voltage can control the rate of change di/dt of the drain current of HEMT 120.
Fourth stage S1-4：MOSFET130 is in complete opening state, the output electricity of HEMT 120
Hold is that the 5th electric capacity C22 discharges through raceway groove.In this stage, because MOSFET130 has completed opening process, high electron mobility is brilliant
The voltage change ratio dV/dt of body pipe 120 is not controlled by external drive circuit.
According to Fig. 6 and Fig. 8 embodiment, the turn off process of switching device 100 is as follows：
First stage S2-1：MOSFET130 grid capacitance is the first electric capacity C11 electric discharges so that MOSFET130 grid
Voltage V2gs between G2 and source S 2 is reduced, and causes the conducting resistance between MOSFET130 drain D 2 and source S 2
RDS(on)Increase, the voltage V1g of the grid G 1 of HEMT 120 can reduce in the process, but due to changing ratio
It is smaller, so it is believed that the working condition of this stage HEMT 120 is constant.
Second stage S2-2：After MOSFET130 V2gs is less than Miller platform, MOSFET130 drain D 2 and source electrode
Voltage Vds between S2 starts to increase, cause HEMT 120 grid G 1 voltage V1g gradually reduce with
And the voltage rise of drain D 1, now HEMT 120 progresses into pinch off state.
It should be noted that Miller platform is a magnitude of voltage, relevant with the structure of device in itself, i.e., MOSFET130 is opened
The disconnected crossing current area of clearance.
Phase III S2-3：Voltage V2gs between MOSFET130 grid G 2 and source S 2 is reduced, MOSFET130's
The voltage of drain D 2 gradually rises, and thus, causing the grid voltage V1g of HEMT 120 gradually reduces, simultaneously
Voltage V1ds increases between the drain D 1 and source S 1 of HEMT 120.
Wherein, the grid voltage V1g of HEMT 120 can be current potential relative value.
Fourth stage S2-4：After MOSFET130 electric current reduces, the electric current of HEMT 120 continue to
MOSFET130 output capacitance is the second electric capacity C12 chargings, and the grid voltage V1g of HEMT 120 is further
Reduce, the electric current of HEMT 120 is decreased to zero, finally complete switch off.
Thus, by the way that MOSFET130 is connected with HEMT 120, can bear high voltage and it is more energy efficient,
High frequency use is more suitable for, and driving design requirement can be reduced, effectively reduces cost, can also prevent the dangerous hair that short circuit is straight-through
It is raw.
To sum up, the switching device encapsulating structure proposed according to embodiments of the present invention, the grid of HEMT
Source electrode after being connected with MOSFET source electrode as switching device, the drain electrode of the source electrode and MOSFET of HEMT
It is connected, the grid of MOSFET grid as switching device, the leakage to drain as switching device of HEMT
Pole, the absolute value of MOSFET Vds magnitudes of voltage are equal with the absolute value of the Vgs magnitudes of voltage of HEMT.Thus,
The switching device of the embodiment of the present invention, by the way that MOSFET is connected with HEMT, high voltage and more can be born
Save, be more suitable for high frequency use, and driving design requirement can be reduced, make this device and Si devices good using above having
Compatibility, cost is effectively reduced, can also prevent the dangerous generation that short circuit is straight-through.In addition, HEMT uses
The mode of dress is arranged on the first hardware cloth wire frame, so as to increase the heat dispersion of HEMT part, is reduced
The thermal resistance of HEMT.
The embodiment of the present invention also proposed a kind of electric-controlled plate for air conditioner, include the switching device of Fig. 1-8 embodiments
Encapsulating structure.
The electric-controlled plate for air conditioner proposed according to embodiments of the present invention, the performance of electric-controlled plate can be improved.
The embodiment of the present invention has also been proposed a kind of air conditioner, including the electric-controlled plate for air conditioner.
The air conditioner proposed according to embodiments of the present invention, the performance of air conditioner can be improved.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description
Point is contained at least one embodiment or example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.Moreover, specific features, structure, material or the feature of description can be with office
Combined in an appropriate manner in one or more embodiments or example.In addition, in the case of not conflicting, the skill of this area
Art personnel can be tied the different embodiments or example and the feature of different embodiments or example described in this specification
Close and combine.
In addition, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the invention, " multiple " are meant that at least two, such as two, three
It is individual etc., unless otherwise specifically defined.
In the description of the invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", " outer ", " up time
The orientation or position relationship of the instruction such as pin ", " counterclockwise ", " axial direction ", " radial direction ", " circumference " be based on orientation shown in the drawings or
Position relationship, it is for only for ease of and describes the present invention and simplify description, rather than indicates or imply that signified device or element must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integrally；Can be that machinery connects
Connect or electrically connect；Can be joined directly together, can also be indirectly connected by intermediary, can be in two elements
The connection in portion or the interaction relationship of two elements.For the ordinary skill in the art, can be according to specific feelings
Condition understands the concrete meaning of above-mentioned term in the present invention.
In the present invention, unless otherwise clearly defined and limited, fisrt feature can be with "above" or "below" second feature
It is that the first and second features directly contact, or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature are directly over second feature or oblique upper, or be merely representative of
Fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " lower section " and " below " can be
One feature is immediately below second feature or obliquely downward, or is merely representative of fisrt feature level height and is less than second feature.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changed, replacing and modification.
Claims (10)
- A kind of 1. switching device encapsulating structure, it is characterised in that including：Substrate, the first hardware cloth wire frame is provided with the substrate；HEMT, the HEMT are arranged on first metal by the way of upside-down mounting On wiring frame；The MOSFET being arranged on the substrate, the MOSFET connect with the HEMT,Wherein, the source after the grid of the HEMT is connected with the source electrode of the MOSFET as switching device Pole, the source electrode of the HEMT are connected with the drain electrode of the MOSFET, and the grid of the MOSFET is as institute The grid of switching device is stated, the drain electrode to drain as the switching device of the HEMT is described The absolute value of MOSFET Vds magnitudes of voltage is equal with the absolute value of the Vgs magnitudes of voltage of the HEMT.
- 2. switching device encapsulating structure as claimed in claim 1, it is characterised in that the second metal is additionally provided with the substrate Wiring frame, wherein, the MOSFET is arranged on the second hardware cloth wire frame.
- 3. switching device encapsulating structure as claimed in claim 2, it is characterised in that the first hardware cloth wire frame and described Two hardware cloth wire frames are made up of copper product, copper tin plated materials or copper silver coating material.
- 4. switching device encapsulating structure as claimed in claim 2, it is characterised in that also set including thermal insulation layer, the thermal insulation layer Put between the first hardware cloth wire frame and the second hardware cloth wire frame to reduce the HEMT pair The heat interference of the MOSFET.
- 5. switching device encapsulating structure as claimed in claim 1, it is characterised in that the MOSFET is Si base low pressure MOSFET。
- 6. switching device encapsulating structure as claimed in claim 1, it is characterised in that the HEMT is consumption Type high pressure HEMT to the greatest extent.
- 7. switching device encapsulating structure as claimed in claim 1, it is characterised in that the HEMT and institute State MOSFET integral packagings.
- 8. the switching device encapsulating structure as any one of claim 1-7, it is characterised in that the high electron mobility Transistor is GaN HEMTs.
- 9. a kind of electric-controlled plate for air conditioner, it is characterised in that including the derailing switch as any one of claim 1-8 Part encapsulating structure.
- 10. a kind of air conditioner, it is characterised in that including the electric-controlled plate as claimed in claim 9 for being used for air conditioner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710725884.0A CN107508585A (en) | 2017-08-22 | 2017-08-22 | The electric-controlled plate and air conditioner of switching device encapsulating structure, air conditioner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710725884.0A CN107508585A (en) | 2017-08-22 | 2017-08-22 | The electric-controlled plate and air conditioner of switching device encapsulating structure, air conditioner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107508585A true CN107508585A (en) | 2017-12-22 |
Family
ID=60691611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710725884.0A Pending CN107508585A (en) | 2017-08-22 | 2017-08-22 | The electric-controlled plate and air conditioner of switching device encapsulating structure, air conditioner |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107508585A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020153938A1 (en) * | 1999-01-22 | 2002-10-24 | Siemens Ag. | Hybrid power MOSFET |
| CN1992359A (en) * | 2005-09-22 | 2007-07-04 | 索尼株式会社 | Light-emitting diode and method for manufacturing the same |
| CN101512559A (en) * | 2006-09-27 | 2009-08-19 | 株式会社瑞萨科技 | IC card and IC card socket |
| CN102629866A (en) * | 2011-02-03 | 2012-08-08 | 万国半导体股份有限公司 | Cascode scheme for improved device switching behavior |
| CN104104384A (en) * | 2013-04-05 | 2014-10-15 | Nxp股份有限公司 | Cascoded semiconductor devices |
| CN104348461A (en) * | 2013-08-02 | 2015-02-11 | 英飞凌技术德累斯顿有限责任公司 | MOSFET driving member |
| CN204179077U (en) * | 2014-05-23 | 2015-02-25 | 美的集团股份有限公司 | Intelligent power module |
| CN204614784U (en) * | 2015-05-28 | 2015-09-02 | 广东美的制冷设备有限公司 | Semiconductor device, intelligent power module and air conditioner |
| CN105452788A (en) * | 2013-07-12 | 2016-03-30 | 株式会社东芝 | Refrigerator |
-
2017
- 2017-08-22 CN CN201710725884.0A patent/CN107508585A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020153938A1 (en) * | 1999-01-22 | 2002-10-24 | Siemens Ag. | Hybrid power MOSFET |
| CN1992359A (en) * | 2005-09-22 | 2007-07-04 | 索尼株式会社 | Light-emitting diode and method for manufacturing the same |
| CN101512559A (en) * | 2006-09-27 | 2009-08-19 | 株式会社瑞萨科技 | IC card and IC card socket |
| CN102629866A (en) * | 2011-02-03 | 2012-08-08 | 万国半导体股份有限公司 | Cascode scheme for improved device switching behavior |
| CN104104384A (en) * | 2013-04-05 | 2014-10-15 | Nxp股份有限公司 | Cascoded semiconductor devices |
| CN105452788A (en) * | 2013-07-12 | 2016-03-30 | 株式会社东芝 | Refrigerator |
| CN104348461A (en) * | 2013-08-02 | 2015-02-11 | 英飞凌技术德累斯顿有限责任公司 | MOSFET driving member |
| CN204179077U (en) * | 2014-05-23 | 2015-02-25 | 美的集团股份有限公司 | Intelligent power module |
| CN204614784U (en) * | 2015-05-28 | 2015-09-02 | 广东美的制冷设备有限公司 | Semiconductor device, intelligent power module and air conditioner |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105895692B (en) | Semiconductor devices with collocation structure | |
| CN102971856B (en) | There is the LDMOS device of the p-body making electric capacity reduce | |
| US8410546B2 (en) | Semiconductor device and DC-DC converter | |
| CN101479940B (en) | Thermally stable semiconductor power device | |
| CN104348461A (en) | MOSFET driving member | |
| CN104009084A (en) | Super junction semiconductor device with a nominal breakdown voltage in a cell area | |
| WO2007073400A2 (en) | Improved mosfet using gate work function engineering for switching applications | |
| EP2789011A2 (en) | Semiconductor modules and methods of forming the same | |
| CN1953203B (en) | High-breakdown voltage semiconductor switching device and switched mode power supply apparatus using the same | |
| Hower et al. | Current status and future trends in silicon power devices | |
| CN207183281U (en) | A kind of groove grid super node semiconductor devices of adjustable switch speed | |
| CN101005071A (en) | Composite field effect transistor structure | |
| CN1212674C (en) | Transverse buffer P-type MOS transistors | |
| CN101783666B (en) | Reinforced-depletion-mode part combination switch circuit capable of being reliably turned off | |
| US9064953B2 (en) | Semiconductor device including a drift zone and a drift control zone | |
| US7977737B2 (en) | Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance | |
| CN107483035A (en) | The electric-controlled plate and air conditioner of switching device, air conditioner | |
| CN107508585A (en) | The electric-controlled plate and air conditioner of switching device encapsulating structure, air conditioner | |
| CN219513109U (en) | Medium-high voltage shielding grid power MOSFET layout | |
| CN116053302B (en) | Back gate auxiliary RESURF system based on double SOI structure and manufacturing method of double SOI structure | |
| CN107800305A (en) | Semiconductor device and power inverter | |
| CN103152944B (en) | Light-emitting diode (LED) driving circuit | |
| CN102738229B (en) | Structure of power transistor and method for manufacturing power transistor | |
| WO2019000763A1 (en) | Low loss semiconductor power device | |
| Saini | Gallium nitride: Analysis of physical properties and performance in high-frequency power electronic circuits |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171222 |
|
| RJ01 | Rejection of invention patent application after publication |