CN204179077U - Intelligent power module - Google Patents
Intelligent power module Download PDFInfo
- Publication number
- CN204179077U CN204179077U CN201420270010.2U CN201420270010U CN204179077U CN 204179077 U CN204179077 U CN 204179077U CN 201420270010 U CN201420270010 U CN 201420270010U CN 204179077 U CN204179077 U CN 204179077U
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- Prior art keywords
- isolation channel
- power module
- high voltage
- intelligent power
- integrated circuit
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- 238000002955 isolation Methods 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 40
- 238000005070 sampling Methods 0.000 claims abstract description 39
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 238000009413 insulation Methods 0.000 claims abstract description 17
- 239000002689 soil Substances 0.000 claims abstract description 5
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000003754 machining Methods 0.000 claims description 7
- 238000003486 chemical etching Methods 0.000 claims description 6
- 229920001568 phenolic resin Polymers 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000005011 phenolic resin Substances 0.000 claims description 5
- 238000010329 laser etching Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
The utility model discloses a kind of Intelligent Power Module, comprising: body, power device, high voltage integrated circuit, sampling resistor and thermal insulation barriers, body comprises metal level stacked successively, insulating barrier and circuit layer; Power device, high voltage integrated circuit and sampling resistor are spaced to turn up the soil and are located on body and are positioned at circuit layer side, metal level is formed with the first and second isolation channels, the projection nucleus of the first isolation channel on circuit layer is around high voltage integrated circuit, and the projection nucleus of the second isolation channel on circuit layer is around sampling resistor; Thermal insulation barriers is filled in the first isolation channel and the second isolation channel.According to Intelligent Power Module of the present utility model, temperature is not easily delivered to non-power region from the power device region of high temperature, thus the operational environment of other device such as high voltage integrated circuit, sampling resistor can not be had influence on, effectively ensure that high voltage integrated circuit, sampling resistor can normally work, and there will not be the situation of life time decay or parameter decay.
Description
Technical field
The utility model relates to technical field of electronic devices, especially relates to a kind of Intelligent Power Module.
Background technology
Point out in correlation technique, IPM (Intelligent Power Module) module, i.e. Intelligent Power Module, its inside is integrated with the devices such as power device, driving chip, sampling resistor, other IC (Integrated Circuit, integrated circuit).Power device is owing to carrying out switch for a long time and having big current through-flow for a long time, therefore power device is larger than other device heating, and power device heating directly has influence on the operational environment of other device by heat transfer, other device is also at high temperature worked for a long time, thus the long term device such as driving chip, sampling resistor work in high temperature environments can accelerate life time decay or parameter decay.
Utility model content
The utility model is intended at least to solve one of technical problem existed in prior art.For this reason, an object of the present utility model is to propose a kind of Intelligent Power Module, and the power device of the high temperature in described Intelligent Power Module can not have influence on the operational environment of other device such as high voltage integrated circuit, sampling resistor.
According to Intelligent Power Module of the present utility model, comprising: body, described body comprises metal level stacked successively, insulating barrier and circuit layer; Power device, high voltage integrated circuit and sampling resistor, described power device, high voltage integrated circuit and sampling resistor are spaced to turn up the soil and are located on described body and are positioned at described circuit layer side, wherein said metal level is formed with the first isolation channel and the second isolation channel, the projection nucleus of described first isolation channel on described circuit layer is around described high voltage integrated circuit, and the projection nucleus of described second isolation channel on described circuit layer is around described sampling resistor; And thermal insulation barriers, described thermal insulation barriers is filled in described first isolation channel and described second isolation channel.
According to Intelligent Power Module of the present utility model, by arranging the first isolation channel and the second isolation channel on the metal layer, and in the first isolation channel and the second isolation channel stuffed heat insulated, temperature is made not easily to be delivered to non-power region from the power device region of high temperature, thus the operational environment of other device such as high voltage integrated circuit, sampling resistor can not be had influence on, effectively ensure that high voltage integrated circuit, sampling resistor can normally work, and there will not be the situation of life time decay or parameter decay.
Alternatively, described first isolation channel and described second isolation channel are all formed as blind hole, and the openend of described blind hole runs through the side surface away from described circuit layer of described metal level.
Further alternatively, the distance between a side surface of the diapire of described first isolation channel and described second isolation channel and the described circuit layer of vicinity of described metal level is 0.01 ~ 0.1mm.
Further alternatively, described thermal insulation barriers away from a side surface of described circuit layer and the side surface away from described circuit layer of described metal level concordant.
Or alternatively, described first isolation channel and described second isolation channel all run through described metal level.
Alternatively, described high voltage integrated circuit and described sampling resistor are all spaced apart from each other in the longitudinal direction of described body with described power device.
Further alternatively, described high voltage integrated circuit and described sampling resistor being transversely spaced apart from each other at described body, described first isolation channel and described second isolation channel communicate with each other.
Alternatively, described first isolation channel and described second isolation channel adopt machining, the mode of laser or chemical etching processes.
Alternatively, described thermal insulation barriers is epoxy resin part or phenolic resins part.
Additional aspect of the present utility model and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present utility model.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present utility model and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:
Fig. 1 is the schematic diagram of the Intelligent Power Module according to the utility model embodiment;
Fig. 2 is the profile of the Intelligent Power Module according to the utility model embodiment;
Fig. 3 is the vertical view of the Intelligent Power Module shown in Fig. 2;
Fig. 4 is the profile of the Intelligent Power Module according to another embodiment of the utility model;
Fig. 5 is the vertical view of the Intelligent Power Module shown in Fig. 4;
Fig. 6 a-Fig. 6 c is the course of processing schematic diagram of the Intelligent Power Module according to the utility model embodiment.
Reference numeral:
100: Intelligent Power Module;
1: body; 11: metal level; 111: the first isolation channels; 112: the second isolation channels;
12: insulating barrier; 13: circuit layer;
2: power device; 21: power device island; 3: high voltage integrated circuit; 31: high voltage integrated circuit island;
4: sampling resistor; 41: sampling resistor island;
5: thermal insulation barriers.
Embodiment
Be described below in detail embodiment of the present utility model, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the utility model, and can not being interpreted as restriction of the present utility model.
In description of the present utility model, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " length ", " thickness ", " on ", D score, " left side ", " right side ", " vertically ", " level ", " top ", " end ", " interior ", orientation or the position relationship of the instruction such as " outward " are based on orientation shown in the drawings or position relationship, only the utility model and simplified characterization for convenience of description, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as restriction of the present utility model.
In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technical characteristic.Thus, be limited with " first ", the feature of " second " can express or impliedly comprise one or more these features.In description of the present utility model, except as otherwise noted, the implication of " multiple " is two or more.
In description of the present utility model, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, concrete condition the concrete meaning of above-mentioned term in the utility model can be understood.
Below with reference to Fig. 1-Fig. 6, the Intelligent Power Module 100 according to the utility model embodiment is described, Intelligent Power Module 100 is a kind of power drive series products power electronics and integrated circuit technique combined, it is integrated in device for power switching and high-voltage driving circuit in an encapsulation, and comprises overcurrent, the failure detector circuit such as under-voltage, overheated.Intelligent Power Module 100 1 aspect receives the control signal of MCU (Micro Control Unit, i.e. micro-control unit), drives compressor, blower fan work, sends system mode detection signal back to MCU on the other hand.Because Intelligent Power Module 100 has high integration, the advantages such as high reliability, being particularly suitable for the frequency converter of drive motors and various inverter, is a kind of desirable power electronic device of frequency control, metallurgical machinery, electric traction, servo-drive, frequency-conversion domestic electric appliances.
As depicted in figs. 1 and 2, according to the Intelligent Power Module 100 of the utility model embodiment, comprise body 1, power device 2, high voltage integrated circuit (i.e. High Voltage Integrated Circuit is called for short HVIC) 3, sampling resistor 4 and thermal insulation barriers 5.
With reference to Fig. 2 and Fig. 4, body 1 comprises metal level 11 stacked successively, insulating barrier 12 and circuit layer 13, that is, insulating barrier 12 is between metal level 11 and circuit layer 13, thus metal level 11 and circuit layer 13 are kept apart, power device 2, high voltage integrated circuit 3 and sampling resistor 4 are spaced to turn up the soil and are located on body 1, and power device 2, high voltage integrated circuit 3 and sampling resistor 4 are all positioned at circuit layer 13 side, in other words, power device 2, high voltage integrated circuit 3 and sampling resistor 4 are arranged on circuit layer 13.Wherein, circuit layer 13 can be multiple, multiple circuit layer 13 be spaced turn up the soil be located at insulating barrier 12 the side deviating from metal level 11 (such as, downside in Fig. 2 and Fig. 4), power device 2, high voltage integrated circuit 3 and sampling resistor 4 can be connected on corresponding circuit layer 13.
Wherein, metal level 11 is formed with the first isolation channel 111 and the second isolation channel 112, as shown in Figure 3 and Figure 5, the projection nucleus of the first isolation channel 111 on circuit layer 13 is around high voltage integrated circuit 3, the projection nucleus of the second isolation channel 112 on circuit layer 13 is around sampling resistor 4, in other words, metal level 11 is divided on three independently " islands " by the first isolation channel 111 and the second isolation channel 112, i.e. power device island 21, high voltage integrated circuit island 31, sampling resistor island 41, the opposite on these three islands is corresponding circuit regions, power device 2, high voltage integrated circuit 3 and sampling resistor 4 are arranged on the circuit layer 13 on this opposite, three islands respectively.Be appreciated that the degree of depth of the first isolation channel 111 and the second isolation channel 112 can be determined according to the thickness of metal level 11.
Alternatively, first isolation channel 111 and the second isolation channel 112 can adopt machining, the mode of laser or chemical etching processes, certainly, the first isolation channel 111 and the second isolation channel 112 can also adopt other mode machine-shaping, and the utility model does not do concrete restriction to this.When it should be noted that modes such as adopting machining such as milling cutter, laser or chemical etching processes the first isolation channel 111 and the second isolation channel 112, damage can not be caused to insulating barrier 12.
With reference to Fig. 6 b and Fig. 6 c, be filled with thermal insulation barriers 5 respectively in the first isolation channel 111 and the second isolation channel 112, thermal insulation barriers 5 can adopt the less material of conductive coefficient to make, to stop the heat transfer of metal level 11.Alternatively, thermal insulation barriers 5 is epoxy resin part or phenolic resins part, due to epoxy resin, the thermal conductivity of phenolic resins is lower, thus can effectively avoid power device island 21, high voltage integrated circuit island 31, heat transfer between sampling resistor island 41, and due to epoxy resin, phenolic resins is thermosets, during filling, the material such as epoxy resin of filling is softening flowing when heating, thus can be injected in the first isolation channel 111 and the second isolation channel 112, epoxy resin is heated to uniform temperature can produce chemical reaction, i.e. cross-linking reaction and cure hard, thus play a supporting role in encapsulation process, and then ensure that the fastness of body 1.
Due to thermal resistance R=δ/(λ × A), wherein, δ is material thickness, and λ is material thermal conductivity (i.e. thermal conductivity), and A is heat transfer cross-sectional area.The metal level 11 material such as epoxy resin that conductive coefficient is less is divided into different regions (i.e. power device island 21, high voltage integrated circuit island 31, sampling resistor island 41), thus the heat transfer of body 1 can be stoped.
Further, Intelligent Power Module 100 can also comprise driving chip, IC etc., in order to avoid the power device 2 of high temperature is on the impact of driving chip, IC etc., aforesaid way equally also can be adopted to carry out Design on thermal insulation to driving chip, IC etc., such as on metal level 11, the position of corresponding driving chip, IC etc. arranges isolation channel respectively, and in isolation channel stuffed heat insulated 5, to reduce the heat transfer of power device 2.Be appreciated that the arrangement on body 1 such as driving chip, IC can design according to actual requirement, the utility model does not do concrete restriction to this.
According to the Intelligent Power Module 100 of the utility model embodiment, by arranging the first isolation channel 111 and the second isolation channel 112 on metal level 11, and in the first isolation channel 111 and the second isolation channel 112 stuffed heat insulated 5, temperature is made not easily to be delivered to non-power region from power device 2 region of high temperature, thus the operational environment of other device such as high voltage integrated circuit 3, sampling resistor 4 can not be had influence on, effectively ensure that high voltage integrated circuit 3, sampling resistor 4 can normally work, and there will not be the situation of life time decay or parameter decay.
According to an embodiment of the present utility model, as shown in Fig. 4 and Fig. 6 c, first isolation channel 111 and the second isolation channel 112 are all formed as blind hole, and the openend of blind hole (such as, upper end in Fig. 4) run through the side surface away from circuit layer 13 of metal level 11, correspondingly, the blind end of blind hole (such as, lower end in Fig. 4) with a side surface (lower surface such as, in Fig. 4) the spaced apart certain distance be in the vertical direction connected with insulating barrier 12 of metal level 11.In order to prevent the milling cutter when machining, damage is caused to insulating barrier 12, distance between the blind end of blind hole and the lower surface (i.e. a side surface of the first isolation channel 111 and the diapire of the second isolation channel 112 and the proximate circuitry layer 13 of metal level 11) of metal level 11 is 0.01mm ~ 0.1mm, and its concrete numerical value can be determined according to machining accuracy.
Certainly, the utility model is not limited thereto, according to another embodiment of the present utility model, as shown in Figure 2, first isolation channel 111 and the second isolation channel 112 can also run through metal level 11 all along the vertical direction, such as, when covering rear employing chemical etching mode with mould and etch grooving on metal level 11, under chemical etching does not have influential situation to insulating barrier 12, may be etched into insulating barrier 12 place, do not stay metal level 11.
After employing aforesaid way processes the first isolation channel 111 and the second isolation channel 112, glue-injection machine injection ring epoxy resins or phenolic resins in the groove (comprising the first isolation channel 111 and the second isolation channel 112) of correspondence can be adopted, as shown in Figure 6 b, then resin solidification is made with baking oven heating, now resin exceeds the upper surface of metal level 11, finally such as can adopt grinder that the resin injected and metal level 11 are polished by mechanical lapping mode, that is, thermal insulation barriers 5 away from a side surface of circuit layer 13 and the side surface away from circuit layer 13 of metal level 11 concordant, as fig. 6 c.
Alternatively, high voltage integrated circuit 3 and sampling resistor 4 all with power device 2 body 1 longitudinal direction (such as, length direction in Fig. 1) on be spaced apart from each other, because the longitudinal direction heat radiation of metal level 11 is more much larger than the thermal resistance of laterally dispelling the heat outward, therefore during Intelligent Power Module 100 heat balance, each point temperature difference in the longitudinal direction of metal level 11 is comparatively large, thus the temperature of the power device 2 of high temperature not easily has influence on the operating state of other device such as high voltage integrated circuit 3 and sampling resistor 4.
Further, as shown in Figure 3 and Figure 5, high voltage integrated circuit 3 and sampling resistor 4 being transversely spaced apart from each other at body 1, the longitudinal size of body 1 can be reduced like this, thus reduce body 1 taking up room in the vertical, first isolation channel 111 and the second isolation channel 112 communicate with each other, and facilitate disposable stuffed heat insulated 5, thus improve the working (machining) efficiency of Intelligent Power Module 100.Certainly, the first isolation channel 111 and the second isolation channel 112 also can be spaced apart from each other (scheming not shown).
According to the Intelligent Power Module 100 of the utility model embodiment, when power device 2 is owing to carrying out switch for a long time and having big current through-flow for a long time, its heat exhaled also not easily passs through metal level 11 and is delivered on other device such as high voltage integrated circuit 3 and sampling resistor 4, thus ensure that other device such as high voltage integrated circuit 3 and sampling resistor 4 can normally work, and then extend the useful life of Intelligent Power Module 100.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present utility model or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and described embodiment of the present utility model, those having ordinary skill in the art will appreciate that: can carry out multiple change, amendment, replacement and modification to these embodiments when not departing from principle of the present utility model and aim, scope of the present utility model is by claim and equivalents thereof.
Claims (9)
1. an Intelligent Power Module, is characterized in that, comprising:
Body, described body comprises metal level stacked successively, insulating barrier and circuit layer;
Power device, high voltage integrated circuit and sampling resistor, described power device, high voltage integrated circuit and sampling resistor are spaced to turn up the soil and are located on described body and are positioned at described circuit layer side, wherein said metal level is formed with the first isolation channel and the second isolation channel, the projection nucleus of described first isolation channel on described circuit layer is around described high voltage integrated circuit, and the projection nucleus of described second isolation channel on described circuit layer is around described sampling resistor; And
Thermal insulation barriers, described thermal insulation barriers is filled in described first isolation channel and described second isolation channel.
2. Intelligent Power Module according to claim 1, is characterized in that, described first isolation channel and described second isolation channel are all formed as blind hole, and the openend of described blind hole runs through the side surface away from described circuit layer of described metal level.
3. Intelligent Power Module according to claim 2, is characterized in that, the distance between a side surface of the diapire of described first isolation channel and described second isolation channel and the described circuit layer of vicinity of described metal level is 0.01 ~ 0.1mm.
4. Intelligent Power Module according to claim 2, is characterized in that, described thermal insulation barriers away from a side surface of described circuit layer and the side surface away from described circuit layer of described metal level concordant.
5. Intelligent Power Module according to claim 1, is characterized in that, described first isolation channel and described second isolation channel all run through described metal level.
6. the Intelligent Power Module according to any one of claim 1-5, is characterized in that, described high voltage integrated circuit and described sampling resistor are all spaced apart from each other in the longitudinal direction of described body with described power device.
7. Intelligent Power Module according to claim 6, is characterized in that, described high voltage integrated circuit and described sampling resistor being transversely spaced apart from each other at described body, and described first isolation channel and described second isolation channel communicate with each other.
8. Intelligent Power Module according to claim 1, is characterized in that, described first isolation channel and described second isolation channel adopt machining, the mode of laser or chemical etching processes.
9. Intelligent Power Module according to claim 1, is characterized in that, described thermal insulation barriers is epoxy resin part or phenolic resins part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420270010.2U CN204179077U (en) | 2014-05-23 | 2014-05-23 | Intelligent power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420270010.2U CN204179077U (en) | 2014-05-23 | 2014-05-23 | Intelligent power module |
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| Publication Number | Publication Date |
|---|---|
| CN204179077U true CN204179077U (en) | 2015-02-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420270010.2U Expired - Fee Related CN204179077U (en) | 2014-05-23 | 2014-05-23 | Intelligent power module |
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| CN (1) | CN204179077U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107301979A (en) * | 2017-06-21 | 2017-10-27 | 广东美的制冷设备有限公司 | SPM and the air conditioner with it |
| CN107508585A (en) * | 2017-08-22 | 2017-12-22 | 广东美的制冷设备有限公司 | The electric-controlled plate and air conditioner of switching device encapsulating structure, air conditioner |
| CN107546036A (en) * | 2016-06-29 | 2018-01-05 | 太阳诱电株式会社 | Variable capacitance element and antenna assembly |
| CN111430312A (en) * | 2020-05-08 | 2020-07-17 | 南京皓赛米电力科技有限公司 | Semiconductor element heat insulation packaging system |
| CN112968027A (en) * | 2021-03-29 | 2021-06-15 | 广东汇芯半导体有限公司 | Intelligent power module |
| CN113747740A (en) * | 2020-05-28 | 2021-12-03 | 宏达国际电子股份有限公司 | Shell assembly and electronic device |
-
2014
- 2014-05-23 CN CN201420270010.2U patent/CN204179077U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546036A (en) * | 2016-06-29 | 2018-01-05 | 太阳诱电株式会社 | Variable capacitance element and antenna assembly |
| CN107301979A (en) * | 2017-06-21 | 2017-10-27 | 广东美的制冷设备有限公司 | SPM and the air conditioner with it |
| CN107508585A (en) * | 2017-08-22 | 2017-12-22 | 广东美的制冷设备有限公司 | The electric-controlled plate and air conditioner of switching device encapsulating structure, air conditioner |
| CN111430312A (en) * | 2020-05-08 | 2020-07-17 | 南京皓赛米电力科技有限公司 | Semiconductor element heat insulation packaging system |
| CN113747740A (en) * | 2020-05-28 | 2021-12-03 | 宏达国际电子股份有限公司 | Shell assembly and electronic device |
| CN112968027A (en) * | 2021-03-29 | 2021-06-15 | 广东汇芯半导体有限公司 | Intelligent power module |
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| CF01 | Termination of patent right due to non-payment of annual fee |
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| CF01 | Termination of patent right due to non-payment of annual fee |