CN107508557A - One kind is based on the passive double balanced mixer of multilayer microstrip balun - Google Patents
One kind is based on the passive double balanced mixer of multilayer microstrip balun Download PDFInfo
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- CN107508557A CN107508557A CN201710736284.4A CN201710736284A CN107508557A CN 107508557 A CN107508557 A CN 107508557A CN 201710736284 A CN201710736284 A CN 201710736284A CN 107508557 A CN107508557 A CN 107508557A
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- Prior art keywords
- microstrip balun
- double balanced
- balanced mixer
- passive double
- dielectric substrate
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- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000002156 mixing Methods 0.000 claims abstract description 32
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 230000010355 oscillation Effects 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims 1
- 150000002466 imines Chemical class 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 238000005303 weighing Methods 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 239000004642 Polyimide Substances 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Transceivers (AREA)
Abstract
The invention discloses one kind to be based on the passive double balanced mixer of multilayer microstrip balun, and it is realized on the dielectric substrate of two layers of overlapping；The bridge-type mixing unit for including radio frequency microstrip balun, local oscillator microstrip balun and four mixer diode compositions based on the passive double balanced mixer of multilayer microstrip balun；The input of radio frequency microstrip balun is arranged to the input of the passive double balanced mixer, and it connects radiofrequency signal；The input connection local oscillation signal of local oscillator microstrip balun, the output end of radio frequency microstrip balun and the output end of local oscillator microstrip balun are respectively connecting to the input of bridge-type mixing unit；The output end of passive double balanced mixer is that the medium frequency output end mouth of formation is coupled based on local oscillator microstrip balun；The input and output end of bridge-type mixing unit and passive double balanced mixer are respectively provided with grade.
Description
Technical field
The invention belongs to frequency mixer field, more particularly to one kind to be based on the passive double balanced mixer of multilayer microstrip balun.
Background technology
Microwave and millimeter wave frequency mixer is widely used in the systems such as Electronic Testing, communication, radar, electronic countermeasure, its function
For the frequency transformation of signal, as a kind of frequency-conversion circuit, frequency mixer is different according to the nonlinear device species used, can
It is divided into active mixer and passive frequency mixer.Passive frequency mixer is to be characterized in circuit as nonlinear device using diode
Simply, design easily, be easy to integrate, working stability, and performance is good.Passive frequency mixer is divided into list by circuit structure form difference
Hold frequency mixer and balanced mixer.Passive, double balanced mixer is the pole of mixing two using two, four or more identical characteristics
The balancing circuitry of pipe composition, and the composition of circuit is made up of the interconnection of balance balun more, they have small noise, high sensitivity, resisted
Interference performance is strong and the advantages that bandwidth.
Passive, double balanced mixer, generally by balance diode pair, 180 ° of 3dB choking-windings (balun) and mid-frequency low-pass
Wave filter group is into the design of wideband balun at present mainly uses progressive two-sided line, and the two-way output of its 180 ° of phase differences exists respectively
Upper and lower two planes, and diode pair pad is typically in approximately the same plane, therefore the connection of balun and diode pair spatially formula
Structure, so proposing very high requirement to welding procedure, while the characteristics of signal transmission poor continuity be present, have impact on frequency mixer
Performance.For the balun by work(form-separating, although the two-way of its 180 ° of phase differences is exported in approximately the same plane, exist
The shortcomings that bandwidth is generally narrow, and manufactured size is bigger.
The content of the invention
In order to solve the deficiencies in the prior art, the invention provides one kind to be based on the passive double balanced mixings of multilayer microstrip balun
Device, it realizes that signal is changed from non-equilibrium to balance by the conversion of multilayer microstrip circuit.The two-way output of its 180 ° of phase differences
In the same plane, practical wide frequency range, and balun has high pass transmission characteristic in itself, this improves frequency mixer local oscillator and penetrated
Isolation performance of the frequency port to intermediate frequency port.
One kind of the present invention is based on the passive double balanced mixer of multilayer microstrip balun, its dielectric base in two layers of overlapping
Realized on piece；It is described based on the passive double balanced mixer of multilayer microstrip balun include radio frequency microstrip balun, local oscillator microstrip balun and
The bridge-type mixing unit of four mixer diode compositions；
The input of radio frequency microstrip balun is arranged to the input of the passive double balanced mixer, and it connects radio frequency letter
Number；The input connection local oscillation signal of local oscillator microstrip balun, the output end of radio frequency microstrip balun and the output of local oscillator microstrip balun
End is respectively connecting to the input of bridge-type mixing unit；The output end of passive double balanced mixer is using local oscillator microstrip balun as base
Plinth couples the medium frequency output end mouth to be formed；The input and output end of bridge-type mixing unit and passive double balanced mixer are all provided with
Put at grade.
Further, the dielectric substrate of two layers of overlapping is directly mutually led by corresponding metal aperture each on substrate
It is logical, realize the conversion of microstrip line.
The circuit production of the present invention is simple, small volume, realizes circuit interconnection and ground connection by plated through-hole, avoids tradition
Interference in metal contact wires between signal, improves signal frequency range.
Further, the orlop dielectric substrate in the dielectric substrate of two layers of overlapping is that dielectric substrate material is
The alumina substrate of purity more than 99.6%.
It should be noted that the dielectric substrate of two layers of overlapping is the impedance matching principle in actual circuit demand
Carry out selection, orlop dielectric substrate except be alumina substrate that dielectric substrate material is purity more than 99.6% it
Outside, it can also be the aluminium nitride chip that dielectric substrate material is purity 98%.
Wherein, the thickness of orlop dielectric substrate is 0.1mm~0.5mm.
Further, the superiors' dielectric substrate in the dielectric substrate of two layers of overlapping is that dielectric substrate material is
The polyimide base film of purity more than 99%.
It should be noted that the dielectric substrate of two layers of overlapping is the impedance matching principle in actual circuit demand
Carry out selection, the superiors' dielectric substrate except being polyimide base film that dielectric substrate material is purity more than 99%,
Can also be according to the substrate of the specifically chosen other materials of actual conditions.
Wherein, the thickness of the superiors' dielectric substrate is 0.01mm~0.15mm.
Further, the radio frequency microstrip balun connects bridge-type mixing list by upside-down mounting soldering respectively with local oscillator microstrip balun
Member.
This ensure that the pad of the mixer diode in bridge-type mixing unit is in same plane structure.
Further, it is described that single plane circuit is applied to based on the passive double balanced mixer of multilayer microstrip balun.
Further, it is described to be mounted on based on the passive double balanced mixer of multilayer microstrip balun in cavity.
Compared with prior art, the beneficial effects of the invention are as follows：
(1) of the invention to realize double balanced mixer based on multilayer microstrip balun, it is wide to be applicable frequency, circuit production letter
It is single, it is easily achieved using traditional microwave production technology.Simultaneously in same media material, the circuit small volume is realized.
(2) it is of the invention that double balanced mixer is realized based on multilayer microstrip balun, it is possible to achieve microwave transmission is by non-
Equilibrate to the conversion of poised state.The structure goes for the application of lower frequency, can also be changed according to the difference of frequency
Physical dimension, but structural principle is constant.
Brief description of the drawings
The Figure of description for forming the part of the application is used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its illustrate be used for explain the application, do not form the improper restriction to the application.
Fig. 1 is the circuit diagram based on the passive double balanced mixer of multilayer microstrip balun of the present invention；
Fig. 2 is the overlapping dielectric substrate of two layers based on the passive double balanced mixer of multilayer microstrip balun of the present invention；
Fig. 3 is the positive electrical block diagram of alumina substrate of the present invention；
Fig. 4 is the alumina substrate reverse side schematic diagram of the present invention；
Fig. 5 is the positive electrical block diagram of polyimide base film；
Fig. 6 is the reverse side schematic diagram of polyimide base film；
Fig. 7 is bridge-type mixing unit structural representation.
Wherein, 1, the input of radio frequency microstrip balun；2nd, the first output end of bridge-type mixing unit；3rd, bridge-type mixing unit
The second output end；4th, the input of local oscillator microstrip balun；5th, the first input end of bridge-type mixing unit；6th, bridge-type mixing unit
The second input；7th, medium frequency output end mouth；8th, the metal throuth hole on alumina substrate；9th, the metal on polyimide base film leads to
Hole；10th, local oscillator microstrip balun；11st, radio frequency microstrip balun.
Embodiment
It is noted that described further below is all exemplary, it is intended to provides further instruction to the application.It is unless another
Indicate, all technologies used herein and scientific terminology are with usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when in this manual using term "comprising" and/or " bag
Include " when, it indicates existing characteristics, step, operation, device, component and/or combinations thereof.
As shown in Fig. 2 one kind of the present invention is based on the passive double balanced mixer of multilayer microstrip balun, what it was overlapped at two layers
Realized on dielectric substrate.
As shown in figure 1, the present invention based on the passive double balanced mixer of multilayer microstrip balun include radio frequency microstrip balun 11,
The bridge-type mixing unit of local oscillator microstrip balun 10 and four mixer diode compositions；
The input 1 of radio frequency microstrip balun is arranged to the input of the passive double balanced mixer, and it connects radio frequency letter
Number；The input 4 of local oscillator microstrip balun connects local oscillation signal, the output end of radio frequency microstrip balun and the output of local oscillator microstrip balun
End is respectively connecting to the input of bridge-type mixing unit；The output end of passive double balanced mixer is to be with local oscillator microstrip balun 10
The medium frequency output end 7 that basis coupling is formed；The input and output end of bridge-type mixing unit and passive double balanced mixer are equal
It is disposed on the same plane.
Wherein, the dielectric substrate of two layers of overlapping is directly conducted by corresponding metal aperture each on substrate, real
The conversion of existing microstrip line.
The circuit production of the present invention is simple, small volume, realizes circuit interconnection and ground connection by plated through-hole, avoids tradition
Interference in metal contact wires between signal, improves signal frequency range.
In the present embodiment, the orlop dielectric substrate in the dielectric substrate of two layers of overlapping is dielectric substrate material
Expect for the alumina substrate of purity more than 99.6%.
It should be noted that the dielectric substrate of two layers of overlapping is the impedance matching principle in actual circuit demand
Carry out selection, orlop dielectric substrate except be alumina substrate that dielectric substrate material is purity more than 99.6% it
Outside, it can also be the aluminium nitride chip that dielectric substrate material is purity 98%.
Wherein, the thickness of orlop dielectric substrate is 0.1mm~0.5mm.
As shown in figure 3, the second output end 3 of bridge-type mixing unit, the second input 6 of bridge-type mixing unit, local oscillator are micro-
First output end 2 of input 4, bridge-type mixing unit with balun, first input end 5, the alumina base of bridge-type mixing unit
These may be contained within alumina substrate front for metal throuth hole 8 on piece, and its annexation is as shown in Figure 1.
As shown in figure 4, the metal throuth hole 8 on alumina substrate is all gold-plated hole.
Wherein, the superiors' dielectric substrate in the dielectric substrate of two layers of overlapping is that dielectric substrate material is purity
More than 99% polyimide base film.
As shown in Figure 5 and Figure 6,9 be plated through-hole, and the circuit on circuit and alumina substrate on polyimide base film leads to
Metal throuth hole is crossed to be connected.
The thickness of the superiors' dielectric substrate is 0.01mm~0.15mm.
It should be noted that the dielectric substrate of two layers of overlapping is the impedance matching principle in actual circuit demand
Carry out selection, the superiors' dielectric substrate except being polyimide base film that dielectric substrate material is purity more than 99%,
Can also be according to the substrate of the specifically chosen other materials of actual conditions.
Wherein, as shown in fig. 7, the radio frequency microstrip balun connects bridge-type by upside-down mounting soldering respectively with local oscillator microstrip balun
Mixing unit.Specifically, the second output end 3 of bridge-type mixing unit, the second input 6 of bridge-type mixing unit, bridge-type mixing
First output end 2 of unit, the first input end 5 of bridge-type mixing unit are connected by upside-down mounting soldering,
This ensure that the pad of the mixer diode in bridge-type mixing unit is in same plane structure.
Specifically, it is described that single plane circuit is applied to based on the passive double balanced mixer of multilayer microstrip balun.
Specifically, it is of the invention described to be mounted on based on the passive double balanced mixer of multilayer microstrip balun in cavity.
The present invention based on multilayer microstrip balun double balanced mixer, local oscillator/radio frequency applications frequency range 2GHz-20Ghz,
IF-FRE scope DC-4GHz, fundamental wave conversion loss representative value are 10dB.
The present invention's realizes double balanced mixer based on multilayer microstrip balun, and applicable frequency is wide, and circuit production is simple,
It is easily achieved using traditional microwave production technology.Simultaneously in same media material, the circuit small volume is realized.
The present invention's realizes double balanced mixer based on multilayer microstrip balun, it is possible to achieve microwave transmission is by non-equilibrium
To the conversion of poised state.The structure goes for the application of lower frequency, can also change structure according to the different of frequency
Size, but structural principle is constant.
Although above-mentioned the embodiment of the present invention is described with reference to accompanying drawing, model not is protected to the present invention
The limitation enclosed, one of ordinary skill in the art should be understood that on the basis of technical scheme those skilled in the art are not
Need to pay various modifications or deformation that creative work can make still within protection scope of the present invention.
Claims (10)
1. one kind be based on the passive double balanced mixer of multilayer microstrip balun, it is characterised in that it is described be based on multilayer microstrip balun without
Source double balanced mixer is realized on the dielectric substrate of two layers of overlapping；It is described mixed based on the passive double flat weighing apparatus of multilayer microstrip balun
Frequency device includes the bridge-type mixing unit of radio frequency microstrip balun, local oscillator microstrip balun and four mixer diode compositions；
The input of radio frequency microstrip balun is arranged to the input of the passive double balanced mixer, and it connects radiofrequency signal；This
Shake the input connection local oscillation signal of microstrip balun, the output end difference of the output end of radio frequency microstrip balun and local oscillator microstrip balun
It is connected to the input of bridge-type mixing unit；The output end of passive double balanced mixer is to be coupled based on local oscillator microstrip balun
The medium frequency output end mouth of formation；The input and output end of bridge-type mixing unit and passive double balanced mixer are arranged at together
In one plane.
2. one kind as claimed in claim 1 is based on the passive double balanced mixer of multilayer microstrip balun, it is characterised in that two stackings
The dielectric substrate of conjunction is directly conducted by corresponding metal aperture each on substrate, realizes the conversion of microstrip line.
3. one kind as claimed in claim 1 is based on the passive double balanced mixer of multilayer microstrip balun, it is characterised in that two stackings
Orlop dielectric substrate in the dielectric substrate of conjunction is the aluminum oxide that dielectric substrate material is purity more than 99.6%
Substrate.
4. one kind as claimed in claim 1 is based on the passive double balanced mixer of multilayer microstrip balun, it is characterised in that two stackings
Orlop dielectric substrate in the dielectric substrate of conjunction is the aluminium nitride chip that dielectric substrate material is purity 98%.
5. one kind as described in claim 3 or 4 is based on the passive double balanced mixer of multilayer microstrip balun, it is characterised in that most
The thickness of lower floor's dielectric substrate is 0.1mm~0.5mm.
6. one kind as described in claim 3 or 4 is based on the passive double balanced mixer of multilayer microstrip balun, it is characterised in that two
The superiors' dielectric substrate being laminated in the dielectric substrate closed is the polyamides that dielectric substrate material is purity more than 99%
Imines substrate.
7. one kind as claimed in claim 6 is based on the passive double balanced mixer of multilayer microstrip balun, it is characterised in that the superiors
The thickness of dielectric substrate is 0.01mm~0.15mm.
8. one kind as claimed in claim 1 is based on the passive double balanced mixer of multilayer microstrip balun, it is characterised in that described to penetrate
Frequency microstrip balun connects bridge-type mixing unit by upside-down mounting soldering respectively with local oscillator microstrip balun.
9. one kind as claimed in claim 1 is based on the passive double balanced mixer of multilayer microstrip balun, it is characterised in that the base
Single plane circuit is applied in the passive double balanced mixer of multilayer microstrip balun.
10. one kind as claimed in claim 1 is based on the passive double balanced mixer of multilayer microstrip balun, it is characterised in that described
It is mounted on based on the passive double balanced mixer of multilayer microstrip balun in cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710736284.4A CN107508557A (en) | 2017-08-24 | 2017-08-24 | One kind is based on the passive double balanced mixer of multilayer microstrip balun |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710736284.4A CN107508557A (en) | 2017-08-24 | 2017-08-24 | One kind is based on the passive double balanced mixer of multilayer microstrip balun |
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| Publication Number | Publication Date |
|---|---|
| CN107508557A true CN107508557A (en) | 2017-12-22 |
Family
ID=60692912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710736284.4A Pending CN107508557A (en) | 2017-08-24 | 2017-08-24 | One kind is based on the passive double balanced mixer of multilayer microstrip balun |
Country Status (1)
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| CN (1) | CN107508557A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109525199A (en) * | 2018-11-19 | 2019-03-26 | 中电科仪器仪表有限公司 | Passive, double flat weighing apparatus I/Q frequency mixer based on multi-layer substrate microstrip circuit structure |
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| US20040185816A1 (en) * | 2003-03-18 | 2004-09-23 | Daxiong Ji | Low temperature co-fired ceramic double balanced mixer |
| CN101510629A (en) * | 2009-03-18 | 2009-08-19 | 东南大学 | Seminorm substrate integration waveguide double-balance mixer and implementing method thereof |
| JP2010130105A (en) * | 2008-11-25 | 2010-06-10 | Tokyo Keiki Inc | Microwave double balanced mixer |
| CN103338008A (en) * | 2013-07-24 | 2013-10-02 | 东南大学 | Wide/intermediate frequency MMW (Millimeter Wave) double-balance passive frequency mixer |
| CN103633943A (en) * | 2013-12-09 | 2014-03-12 | 中国电子科技集团公司第四十一研究所 | Ultra-wideband frequency mixer |
| US20140097882A1 (en) * | 2012-10-08 | 2014-04-10 | Marki Microwave, Inc. | Mixer fabrication technique and system using the same |
| CN103888081A (en) * | 2014-03-11 | 2014-06-25 | 西安邮电大学 | Double balanced mixer device |
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| CN105305969A (en) * | 2015-12-01 | 2016-02-03 | 王磊 | Ultra wideband medium frequency double balanced mixer circuit |
| CN106156435A (en) * | 2016-07-12 | 2016-11-23 | 成都泰格微电子研究所有限责任公司 | A kind of 2 ~ 4 GHz GaAs passive double balanced mixer chip and methods for designing thereof |
| CN107040217A (en) * | 2017-04-13 | 2017-08-11 | 武汉大学 | A kind of collapsible double flat weighing apparatus active mixer of K-band |
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2017
- 2017-08-24 CN CN201710736284.4A patent/CN107508557A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0917283A2 (en) * | 1997-11-18 | 1999-05-19 | TRW Inc. | High linearity active balance mixer |
| US20040185816A1 (en) * | 2003-03-18 | 2004-09-23 | Daxiong Ji | Low temperature co-fired ceramic double balanced mixer |
| JP2010130105A (en) * | 2008-11-25 | 2010-06-10 | Tokyo Keiki Inc | Microwave double balanced mixer |
| CN101510629A (en) * | 2009-03-18 | 2009-08-19 | 东南大学 | Seminorm substrate integration waveguide double-balance mixer and implementing method thereof |
| US20140097882A1 (en) * | 2012-10-08 | 2014-04-10 | Marki Microwave, Inc. | Mixer fabrication technique and system using the same |
| CN103338008A (en) * | 2013-07-24 | 2013-10-02 | 东南大学 | Wide/intermediate frequency MMW (Millimeter Wave) double-balance passive frequency mixer |
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| CN104868852A (en) * | 2015-04-21 | 2015-08-26 | 中国电子科技集团公司第四十一研究所 | Passive double balanced mixer based on novel groove line-microstrip Balun |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109525199A (en) * | 2018-11-19 | 2019-03-26 | 中电科仪器仪表有限公司 | Passive, double flat weighing apparatus I/Q frequency mixer based on multi-layer substrate microstrip circuit structure |
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Application publication date: 20171222 |