CN106156435A - A kind of 2 ~ 4 GHz GaAs passive double balanced mixer chip and methods for designing thereof - Google Patents
A kind of 2 ~ 4 GHz GaAs passive double balanced mixer chip and methods for designing thereof Download PDFInfo
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- CN106156435A CN106156435A CN201610544767.XA CN201610544767A CN106156435A CN 106156435 A CN106156435 A CN 106156435A CN 201610544767 A CN201610544767 A CN 201610544767A CN 106156435 A CN106156435 A CN 106156435A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/392—Floor-planning or layout, e.g. partitioning or placement
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1408—Balanced arrangements with diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
Abstract
The invention discloses a kind of 2 ~ 4GHz GaAs passive double balanced mixer chip and method for designing thereof, belong to monolithic integrated microwave circuit field (MMIC)；A kind of 2 ~ 4 GHz GaAs passive double balanced mixer chip includes RF_BALUN, LO_BALUN, Schottky diode and matching element；Four identical diode head and the tail series connection cyclization, are connected with two baluns, it is achieved from the conversion of single-ended-to-difference；Output IF draws from the centre cap point of any one balun or draws from RF side balun, the balun centre-point earth of LO side；Utilize emulation ilities parameter optimization, adjust the operating frequency of frequency mixer, conversion gain, port standing wave by regulation balun turn ratio, diode size, increase matching element；MMIC passive double balanced mixer chip is less than conventional hybrid integrated circuit dimensions, integrated level is high, stable performance, concordance are good, it is possible to simplified system designs, and reduces module size.
Description
Technical field
The present invention relates to monolithic integrated microwave circuit field (MMIC), be specifically related to a kind of 2 ~ 4 GHz GaAs passive double
Balanced mixer chip and method for designing thereof.
Background technology
Monolithic integrated microwave circuit (Monolithic Microwave Integrated Circuit, MMIC) becomes
The mainstay of the various high-tech arms of current development, is widely used in the tactical missile of various advanced person, electronic warfare, communication system
System, the phased-array radar (the most airborne and spaceborne radar) of various advanced persons of base station, land, sea and air, at the mobile electricity of civilian business
The sides such as words, radio communication, individual's satellite communication network, global positioning system, direct broadcasting satellite reception and millimeter wave automatic collision avoidance system
Face has formed the great market developed rapidly.
GaAs can make the semi-insulating highly resistant material of more than resistivity ratio silicon, high 3 orders of magnitude of germanium, is commonly used to make
The basic material of IC substrate, Infrared Detectors, γ photon detector etc..Owing to its electron mobility is than silicon big 5～6
Times, therefore obtain important application in terms of making microwave device and high-speed digital circuit.The semiconductor device tool made with GaAs
There are the advantages such as high frequency, high temperature, cryogenic property are good, noise is little, capability of resistance to radiation is strong.Further, it is also possible to be used for making translator
Part bulk effect device.GaAs is in semi-conducting material, has the material of many-sided advantage concurrently, is also widely used in military affairs
Field, is the important materials of laser-guided bomb.
Although Si technique is the most ripe, price very advantageous, and also its metal level is all a lot, typically up to 8 layers, and this meaning
For design multilamellar mutually around high degree of coupling balun (being different from plane/2D balun, 2.5D/3D balun can be approximately) have very much
Advantage.By contrast, the general layer 2-3 of metal level of GaAs, the planar inductor degree of coupling of coiling is relatively low, loss is relatively big, but
The RF/Microwave characteristic of GaAs technique is more excellent, and the noise coefficient of active device (such as diode, audion) is far below Si work
Skill, therefore the most more advantage for low noise microwave mixer.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of passive pair of balanced mixing of 2 ~ 4 GHz GaAs
Device chip and method for designing thereof, thus simplify the design difficulty of modular circuit, compare conventional hybrid integrated circuit and chi is obviously reduced
Very little.
It is an object of the invention to be achieved through the following technical solutions: a kind of passive pair of balanced mixing of 2 ~ 4 GHz GaAs
Device chip, including RF_BALUN, LO_BALUN, Schottky diode and matching element, Schottky diode constitutes center mixing
Unit, center mixing unit is connected with two baluns respectively.
Described RF_BALUN, input port (PORT1) connects radiofrequency signal RF, terminates electricity at radiofrequency signal incoming line one
Holding (C2), other end ground connection, the centre tap of output winding connects output port (PORT3), and remaining one end, two ends connects Schottky
The outfan of diode (D2), the other end connects the outfan of Schottky diode (D4)；
Described LO_BALUN, input port (PORT2) meets local oscillation signal LO, connects electric capacity on input port (PORT2) circuit
(C3) one end, electric capacity (C3) other end is connected with LO_BALUN input winding one end, another termination electricity of LO_BALUN input winding
Holding (C1) one end, electric capacity (C1) other end ground connection, LO_BALUN exports winding centre cap ground connection, and upper and lower two ends meet Xiao Te respectively
The outfan of based diode (D1, D3), output port (PORT3) draws signal, it is achieved the conversion of single-ended-to-difference.
Described Schottky diode, uses four identical diode (D1, D2, D3, D4) head and the tail series connection cyclization
Shape structure.
The method for designing of described one 2 ~ 4 GHz GaAs passive double balanced mixer chip, comprises the steps:
(1) first design balun, RF/LO-BALUN balun is added non-equilibrium end input port (PORT1), balance end output
Port (PORT2, PORT3)；
(2) secondly regulation number of turn N of balun coiling, coiling length of side L, around line width W, coiling interval S, observe the SP of balun
Can so that it is meet in working frequency range or close to the equal condition of balance end amplitude of balun；
(3) two baluns and four diodes are coupled together, add tri-ports of RF/LO/IF, be used for connecting back-end circuit；
(4) regulation balun turn ratio, the size of diode, increase matching element adjust the operating frequency of frequency mixer, frequency conversion increasing
Benefit, port standing wave；
(5) determine basic parameter by 2D Electromagnetic Simulation, then obtain more accurate balun performance by 3D Electromagnetic Simulation；
(6) optimized parameter obtained by emulation draws integrated circuit diagram.
The method for designing of described one 2 ~ 4 GHz GaAs passive double balanced mixer chip, on winding mode,
Primary side metal wire is often just skipped the metal wire of a secondary side around a circle, and such primary side, secondary side turn ratio just become
About 1:2, reaches accurately to adjust the operating frequency of frequency mixer, conversion gain and the effect of port standing wave.
The method for designing of described one 2 ~ 4GHz GaAs passive double balanced mixer chip, in step (5), will
RF/IF port reversal connection, i.e. LO, IF port plus signal source, RF port connects load, it is achieved up-conversion gain, the port to frequency mixer
Standing wave, compression point power, the emulation of isolation index.
The method for designing of described one 2 ~ 4 GHz GaAs passive double balanced mixer chip, uses GaAs technique system
Make.
The method for designing of described one 2 ~ 4 GHz GaAs passive double balanced mixer chip, specifically uses WIN
The PD50-12 technique of Foundry.
The invention has the beneficial effects as follows: RF/LO operating frequency 2 ~ 4 GHz, IF operating frequency DC-1.5 GHz, frequency conversion
Gain>-8dB, LO drive power 13dBm, port VSWR<2.0, RF-LO isolation>40dB, RF-IF isolation>25dB,
LO-IF isolation > 35dB, thus simplify the design difficulty of modular circuit, compare conventional hybrid integrated circuit and chi is obviously reduced
Very little.
Accompanying drawing explanation
Fig. 1 is mixer figure；
Fig. 2 is RF/LO port voltage standing-wave ratio；
Fig. 3 is RF/LO impedance Smith circle diagram；
When Fig. 4 is IF=0.1GHz, downconverting gain；
When Fig. 5 is LO=3GHz, up-conversion gain；
When Fig. 6 is IF=0.1GHz, up-conversion gain；
Wherein, PORT1-RF, PORT2-LO, PORT3-IF.
Detailed description of the invention
Technical scheme is described in further detail below in conjunction with the accompanying drawings, but protection scope of the present invention is not limited to
The following stated.
As it is shown in figure 1, a kind of 2 ~ 4 GHz GaAs passive double balanced mixer chip, including RF_BALUN, LO_BALUN,
Schottky diode and matching element, Schottky diode constitutes center mixing unit, center mixing unit respectively with two bars
Human relations are connected.
Described RF_BALUN, input port (PORT1) connects radiofrequency signal RF, terminates electricity at radiofrequency signal incoming line one
Holding (C2), other end ground connection, the centre tap of output winding connects output port (PORT3), and remaining one end, two ends connects Schottky
The outfan of diode (D2), the other end connects the outfan of Schottky diode (D4)；
Described LO_BALUN, input port (PORT2) meets local oscillation signal LO, connects electric capacity on input port (PORT2) circuit
(C3) one end, electric capacity (C3) other end is connected with LO_BALUN input winding one end, another termination electricity of LO_BALUN input winding
Holding (C1) one end, electric capacity (C1) other end ground connection, LO_BALUN exports winding centre cap ground connection, and upper and lower two ends meet Xiao Te respectively
The outfan of based diode (D1, D3), output port (PORT3) draws signal, it is achieved the conversion of single-ended-to-difference.
Described Schottky diode, uses four identical diode (D1, D2, D3, D4) head and the tail series connection cyclization
Shape structure.
The method for designing of described one 2 ~ 4 GHz GaAs passive double balanced mixer chip, comprises the steps:
(1) first design balun, RF/LO-BALUN balun is added non-equilibrium end input port (PORT1), balance end output
Port (PORT2, PORT3)；
(2) secondly regulation number of turn N of balun coiling, coiling length of side L, around line width W, coiling interval S, observe the SP of balun
Can so that it is meet in working frequency range or close to the equal condition of balance end amplitude of balun；
(3) two baluns and four diodes are coupled together, add tri-ports of RF/LO/IF, be used for connecting back-end circuit；
(4) regulation balun turn ratio, the size of diode, increase matching element adjust the operating frequency of frequency mixer, frequency conversion increasing
Benefit, port standing wave；
(5) determine basic parameter by 2D Electromagnetic Simulation, then obtain more accurate balun performance by 3D Electromagnetic Simulation；
(6) optimized parameter obtained by emulation draws integrated circuit diagram.
The method for designing of described one 2 ~ 4 GHz GaAs passive double balanced mixer chip, on winding mode, will
The metal wire of a secondary side often just skipped by primary side metal wire around a circle, and such primary side, secondary side turn ratio just become about
1:2, reaches accurately to adjust the operating frequency of frequency mixer, conversion gain and the effect of port standing wave.
The method for designing of described one 2 ~ 4GHz GaAs passive double balanced mixer chip, in step (5), by RF/
IF port reversal connection, i.e. LO, IF port plus signal source, RF port connects load, it is achieved stay up-conversion gain, the port of frequency mixer
Ripple, compression point power, the emulation of isolation index.
The method for designing of described one 2 ~ 4 GHz GaAs passive double balanced mixer chip, uses GaAs technique system
Make.
The method for designing of described one 2 ~ 4 GHz GaAs passive double balanced mixer chip, specifically uses WIN
The PD50-12 technique of Foundry.
First designing balun, conventional double flat weighing apparatus RF/LO balun is full symmetric, and RF/LO port can exchange in theory.Often
The planar Balun seen is that double-line mutual is wound, is similar to planar inductor, also referred to as flat surface transformer, according to Fig. 1 by two baluns and four
Individual diode couples together, and adds RF/LO/IF tri-ports, respectively numberings PORT1/PORT2/PORT3.Ideally,
The balance end amplitude of balun is equal, phase contrast 180 °, it may be assumed that
dB(S21)= dB(S31)
Phase(S21)= Phase(S21)±180°
As it is shown on figure 3, be RF/LO impedance Smith circle diagram, calculate impedance matching parameter.By regulation coiling number of turn N, around
Line length of side L, around line width W, coiling interval S, observe the SP performance of balun so that it is meet or close to above bar in working frequency range
Part.Owing to the side of balun couples very strong, simple 2D Electromagnetic Simulation may differ relatively big with actual performance, so first with 2D electricity
Magnetic emulation determines basic parameter, then obtains more accurate balun performance by 3D Electromagnetic Simulation, and for assisting final performance
Optimize, draw integrated circuit diagram according to emulation optimized parameter.The local oscillation power of passive double flat weighing apparatus diode mixer is general about
For 13dBm, with the conducting voltage of diode is relevant, the local oscillation power of the highest needs of conducting voltage is the highest, corresponding IP1dB
The highest.Scanned by interpolation variable, can check that fixing LOfreq scans RFfreq, fixing RFfreq scans LOfreq, admittedly
Determine IFfreq to scan LOfreq, fixing IFfreq scanning RFfreq, fixing LOpower scanning RFpower, fix
The indexs such as downconverting gain under the conditions of RFpower scanning LOpower etc., port standing wave, compression point power, isolation, Fig. 4
During for IF=0.1GHz, the downconverting gain reached by the design method, Fig. 2 is RF/LO port voltage standing-wave ratio.
By by RF/IF port reversal connection, i.e. LO, IF port plus signal source, RF port connects 50 Ohm loads, can be to mixing
The indexs such as the up-conversion gain of device, port standing wave, compression point power, isolation emulate, and as shown in Figure 6, are by the design
Method, the up-conversion gain reached as IF=0.1GHz, Fig. 5 is as LO=3GHz, the up-conversion gain reached.
The work of frequency mixer is adjusted by regulation balun and the size of diode, balun turn ratio, increase matching element
Frequency, conversion gain, port standing wave etc., compromise under various restrictive conditions, select a result more equalized.
Claims (6)
1. 2 ~ 4 GHz GaAs passive double balanced mixer chip, including RF_BALUN, LO_BALUN, Schottky diode
And matching element, Schottky diode constitutes center mixing unit, and center mixing unit is connected with two baluns respectively, its feature
It is:
A. described RF_BALUN, input port (PORT1) connects radiofrequency signal RF, in radiofrequency signal incoming line one termination capacitor
(C2), other end ground connection, the centre tap of output winding connects output port (PORT3), and remaining one end, two ends connects Schottky two
The outfan of pole pipe (D2), the other end connects the outfan of Schottky diode (D4)；
B. described LO_BALUN, input port (PORT2) meets local oscillation signal LO, connects electricity on input port (PORT2) circuit
Holding (C3) one end, electric capacity (C3) other end is connected with LO_BALUN input winding one end, LO_BALUN another termination of input winding
Electric capacity (C1) one end, electric capacity (C1) other end ground connection, LO_BALUN exports winding centre cap ground connection, and upper and lower two ends meet Xiao respectively
The outfan of special based diode (D1, D3), output port (PORT3) draws signal, it is achieved the conversion of single-ended-to-difference；
C. described Schottky diode, uses four identical diode (D1, D2, D3, D4) head and the tail to be connected into ring-type
Structure.
2. the method for designing of a kind of 2 ~ 4 GHz GaAs passive double balanced mixer chip as claimed in claim 1, its feature
It is, comprises the steps:
(1) first design balun, RF/LO-BALUN balun is added non-equilibrium end input port (PORT1), balance end output
Port (PORT2, PORT3)；
(2) secondly regulation number of turn N of balun coiling, coiling length of side L, around line width W, coiling interval S, observe the SP of balun
Can so that it is meet in working frequency range or close to the equal condition of balance end amplitude of balun；
(3) two baluns and four diodes are coupled together, add tri-ports of RF/LO/IF, be used for connecting back-end circuit；
(4) regulation balun turn ratio, the size of diode, increase matching element adjust the operating frequency of frequency mixer, frequency conversion increasing
Benefit, port standing wave；
(5) determine basic parameter by 2D Electromagnetic Simulation, then obtain more accurate balun performance by 3D Electromagnetic Simulation；
(6) optimized parameter obtained by emulation draws integrated circuit diagram.
The method for designing of a kind of 2 ~ 4 GHz GaAs the most according to claim 2 passive double balanced mixer chip, its
It is characterised by:
Primary side metal wire, on winding mode, is often just skipped the metal wire of a secondary side by the design method around a circle, this
Sample primary side, secondary side turn ratio just become about 1:2, reach accurately to adjust the operating frequency of frequency mixer, conversion gain and port
The effect of standing wave.
The method for designing of a kind of 2 ~ 4 GHz GaAs the most according to claim 2 passive double balanced mixer chip, its
It is characterised by:
In step (5), by RF/IF port reversal connection, i.e. LO, IF port plus signal source, RF port connects load, it is achieved to frequency mixer
Up-conversion gain, port standing wave, compression point power, the emulation of isolation index.
The method for designing of a kind of 2 ~ 4 GHz GaAs the most according to claim 2 passive double balanced mixer chip, its
It is characterised by: the method uses GaAs technique to manufacture.
The method for designing of a kind of 2 ~ 4 GHz GaAs the most according to claim 5 passive double balanced mixer chip, its
It is characterised by: the method uses the PD50-12 technique of WIN Foundry.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610544767.XA CN106156435A (en) | 2016-07-12 | 2016-07-12 | A kind of 2 ~ 4 GHz GaAs passive double balanced mixer chip and methods for designing thereof |
| PCT/CN2016/096415 WO2018010261A1 (en) | 2016-07-12 | 2016-08-23 | 2-4 ghz gaas passive double-balanced mixer chip and design method therefor |
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| CN201610544767.XA CN106156435A (en) | 2016-07-12 | 2016-07-12 | A kind of 2 ~ 4 GHz GaAs passive double balanced mixer chip and methods for designing thereof |
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| WO (1) | WO2018010261A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107508557A (en) * | 2017-08-24 | 2017-12-22 | 中国电子科技集团公司第四十研究所 | One kind is based on the passive double balanced mixer of multilayer microstrip balun |
| CN108521270A (en) * | 2018-02-05 | 2018-09-11 | 海能达通信股份有限公司 | Frequency mixer and receiver |
| CN109245727A (en) * | 2017-07-11 | 2019-01-18 | 美国亚德诺半导体公司 | Frequency mixer with the improved linearity |
| CN109639248A (en) * | 2018-12-07 | 2019-04-16 | 曹秀妹 | A kind of dual-mode power amplifier and mode switching method of changeable operating power |
| WO2020125192A1 (en) * | 2018-11-30 | 2020-06-25 | 南京米乐为微电子科技有限公司 | Passive wideband frequency mixer |
| CN113809989A (en) * | 2021-09-15 | 2021-12-17 | 西安博瑞集信电子科技有限公司 | Broadband low-frequency conversion loss double-balance mixer chip based on GaAs process |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112131817B (en) * | 2020-09-28 | 2023-10-31 | 北京国联万众半导体科技有限公司 | Millimeter wave monolithic integrated design method |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109245727A (en) * | 2017-07-11 | 2019-01-18 | 美国亚德诺半导体公司 | Frequency mixer with the improved linearity |
| CN107508557A (en) * | 2017-08-24 | 2017-12-22 | 中国电子科技集团公司第四十研究所 | One kind is based on the passive double balanced mixer of multilayer microstrip balun |
| CN108521270A (en) * | 2018-02-05 | 2018-09-11 | 海能达通信股份有限公司 | Frequency mixer and receiver |
| CN108521270B (en) * | 2018-02-05 | 2022-06-21 | 海能达通信股份有限公司 | Mixer and receiver |
| WO2020125192A1 (en) * | 2018-11-30 | 2020-06-25 | 南京米乐为微电子科技有限公司 | Passive wideband frequency mixer |
| US11527995B2 (en) | 2018-11-30 | 2022-12-13 | Nanjing Milliway Microelectronics Technology Co., Ltd. | Passive wideband mixer |
| CN109639248A (en) * | 2018-12-07 | 2019-04-16 | 曹秀妹 | A kind of dual-mode power amplifier and mode switching method of changeable operating power |
| CN113809989A (en) * | 2021-09-15 | 2021-12-17 | 西安博瑞集信电子科技有限公司 | Broadband low-frequency conversion loss double-balance mixer chip based on GaAs process |
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|---|---|
| WO2018010261A1 (en) | 2018-01-18 |
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