CN107332516A - One kind is based on the passive double balanced mixer of multilayer Marchand microstrip baluns - Google Patents

One kind is based on the passive double balanced mixer of multilayer Marchand microstrip baluns Download PDF

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Publication number
CN107332516A
CN107332516A CN201710735592.5A CN201710735592A CN107332516A CN 107332516 A CN107332516 A CN 107332516A CN 201710735592 A CN201710735592 A CN 201710735592A CN 107332516 A CN107332516 A CN 107332516A
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CN
China
Prior art keywords
microstrip
marchand
double balanced
balanced mixer
multilayer
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Pending
Application number
CN201710735592.5A
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Chinese (zh)
Inventor
李中谱
刘金现
韩恒敏
李登宝
范国清
孙国泉
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CETC 41 Institute
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CETC 41 Institute
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Priority to CN201710735592.5A priority Critical patent/CN107332516A/en
Publication of CN107332516A publication Critical patent/CN107332516A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/16Multiple-frequency-changing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type

Abstract

The passive double balanced mixer of multilayer Marchand microstrip baluns is based on the invention discloses one kind, it is realized on the dielectric substrate of two layers of overlapping;It is described to include the bridge-type mixing unit of radio frequency microstrip balun, local oscillator microstrip balun and four mixer diode compositions based on the passive double balanced mixer of multilayer Marchand microstrip baluns;The radio frequency microstrip balun and local oscillator microstrip balun are Marchand microstrip baluns;The input of radio frequency microstrip balun is set to the input of the passive double balanced mixer, and it connects radiofrequency signal;The input connection local oscillation signal of local oscillator microstrip balun, the output end of radio frequency microstrip balun and the output end of local oscillator microstrip balun are respectively connecting to the input of bridge-type mixing unit;The output end of passive double balanced mixer is the medium frequency output end mouthful that formation is coupled based on local oscillator microstrip balun;The input and output end of bridge-type mixing unit and passive double balanced mixer are respectively provided with grade.

Description

One kind is based on the passive double balanced mixer of multilayer Marchand microstrip baluns
Technical field
Mixed the invention belongs to frequency mixer field, more particularly to a kind of weighed based on the passive double flat of multilayer Marchand microstrip baluns Frequency device.
Background technology
Microwave and millimeter wave frequency mixer is widely used in the systems such as Electronic Testing, communication, radar, electronic countermeasure, its function For the frequency transformation of signal, as a kind of frequency-conversion circuit, frequency mixer is different according to the nonlinear device species used, can It is divided into active mixer and passive frequency mixer.Passive frequency mixer is, as nonlinear device, to be characterized in circuit using diode Simply, design is easy, be easy to integrated, working stability, and performance is good.Passive frequency mixer is divided into list by circuit structure form difference Hold frequency mixer and balanced mixer.Passive, double balanced mixer is the pole of mixing two using two, four or more identical characteristics The balancing circuitry of pipe composition, and the composition of circuit is made up of the interconnection of balance balun more, they have, and noise is small, sensitivity is high, anti- Interference performance is strong and the advantages of bandwidth.
Passive, double balanced mixer, generally by balance diode pair, 18003dB choking-windings (balun) and mid-frequency low-pass Wave filter group is into the design of current wideband balun mainly uses progressive two-sided line, and it 1800The two-way output of phase difference exists respectively Upper and lower two planes, and diode pair pad is general in approximately the same plane, therefore the connection spatially formula of balun and diode pair Structure, so very high requirement is proposed to welding procedure, while the characteristics of there is signal transmission poor continuity, have impact on frequency mixer Performance.For the balun by work(form-separating, it 1800Although the two-way of phase difference is exported in approximately the same plane, exist Bandwidth is generally narrow, and manufactured size is than larger shortcoming.Equally, the microstrip balun coupled using two-wire, although can reduce The size of device, ultra wide band is realized, but microstrip balun great-leap-forward interconnection structure has a strong impact on the performance of device, is not suitable for higher Frequency.
The content of the invention
It is passive double based on multilayer Marchand microstrip baluns the invention provides one kind in order to solve the deficiencies in the prior art Balanced mixer, it realizes that signal is changed from non-equilibrium to balance by the conversion of multilayer microstrip circuit.It 1800Phase difference Two-way is exported in the same plane, practical wide frequency range, and balun has high pass transmission characteristic in itself, and this improves frequency mixer The isolation performance of local oscillator and prevention at radio-frequency port to intermediate frequency port.
One kind of the present invention is based on the passive double balanced mixer of multilayer Marchand microstrip baluns, and it is exhausted that it is overlapped at two layers Realized on edge dielectric substrate;It is described that radio frequency microstrip bar is included based on the passive double balanced mixer of multilayer Marchand microstrip baluns The bridge-type mixing unit of human relations, local oscillator microstrip balun and four mixer diode compositions;The radio frequency microstrip balun and local oscillator micro-strip Balun is Marchand microstrip baluns;
The input of radio frequency microstrip balun is set to the input of the passive double balanced mixer, and it connects radio frequency letter Number;The input connection local oscillation signal of local oscillator microstrip balun, the output end of radio frequency microstrip balun and the output of local oscillator microstrip balun End is respectively connecting to the input of bridge-type mixing unit;The output end of passive double balanced mixer is using local oscillator microstrip balun as base Plinth couples the medium frequency output end to be formed mouthful;The input and output end of bridge-type mixing unit and passive double balanced mixer are all provided with Put at grade.
Further, the dielectric substrate of two layers of overlapping is directly mutually led by the metal aperture on corresponding respective substrate It is logical, realize the conversion of microstrip line.
The circuit production of the present invention is simple, small volume, realize circuit interconnection by plated through-hole and be grounded, it is to avoid tradition Interference in metal contact wires between signal, improves signal frequency range.
Further, the orlop dielectric substrate in the dielectric substrate of two layers of overlapping is that dielectric substrate material is The alumina substrate of purity more than 99.6%.
It should be noted that the dielectric substrate of two layers of overlapping is the impedance matching principle in actual circuit demand Carry out selection, orlop dielectric substrate except be alumina substrate that dielectric substrate material is purity more than 99.6% it Outside, it can also be the aluminium nitride chip that dielectric substrate material is purity 98%.
Wherein, the thickness of orlop dielectric substrate is 0.1mm~0.5mm.
Further, the superiors' dielectric substrate in the dielectric substrate of two layers of overlapping is that dielectric substrate material is The polyimide base film of purity more than 99%.
It should be noted that the dielectric substrate of two layers of overlapping is the impedance matching principle in actual circuit demand Carry out selection, the superiors' dielectric substrate except being polyimide base film that dielectric substrate material is purity more than 99%, Can also be according to the substrate of the specifically chosen other materials of actual conditions.
Wherein, the thickness of the superiors' dielectric substrate is 0.01mm~0.15mm.
Further, the radio frequency microstrip balun and local oscillator microstrip balun connect bridge-type mixing list by upside-down mounting soldering respectively Member.
This ensure that the pad of the mixer diode in bridge-type mixing unit is in same plane structure.
Further, it is described that single plane electricity is applied to based on the passive double balanced mixer of multilayer Marchand microstrip baluns Road.
Further, it is described to be mounted on based on the passive double balanced mixer of multilayer Marchand microstrip baluns in cavity.
Compared with prior art, the beneficial effects of the invention are as follows:
(1) it is of the invention based on the passive double balanced mixer of multilayer Marchand microstrip baluns, pass through and apply multilayer micro-strip The conversion of circuit, realizes that signal is changed from non-equilibrium to balance.It 1800The two-way output of phase difference is in the same plane, practical Wide frequency range, and balun has high pass transmission characteristic in itself, this improves frequency mixer local oscillator and prevention at radio-frequency port to intermediate frequency port Isolation performance.
(2) of the invention based on the passive double balanced mixer of multilayer Marchand microstrip baluns, it is wide to be applicable frequency, circuit system Make simple, be easily achieved using traditional microwave production technology.Simultaneously in same media material, the circuit small volume is realized.
(3) it is of the invention based on the passive double balanced mixer of multilayer Marchand microstrip baluns, it is possible to achieve microwave transmission By the non-equilibrium conversion to poised state.The structure goes for the application of lower frequency, can also be according to the difference of frequency Change physical dimension, but structural principle is constant.
Brief description of the drawings
The Figure of description for constituting the part of the application is used for providing further understanding of the present application, and the application's shows Meaning property embodiment and its illustrate be used for explain the application, do not constitute the improper restriction to the application.
Fig. 1 is the circuit diagram based on the passive double balanced mixer of multilayer Marchand microstrip baluns;
Fig. 2 is two layers of overlapping dielectric substrate based on the passive double balanced mixer of multilayer Marchand microstrip baluns;
Fig. 3 is the positive electrical block diagram of alumina substrate of the present invention;
Fig. 4 is the alumina substrate reverse side schematic diagram of the present invention;
Fig. 5 is the positive electrical block diagram of polyimide base film;
Fig. 6 is the reverse side schematic diagram of polyimide base film;
Fig. 7 is bridge-type mixing unit structural representation.
Wherein, 1, the input of radio frequency microstrip balun;2nd, the first output end of bridge-type mixing unit;3rd, bridge-type mixing unit The second output end;4th, the input of local oscillator microstrip balun;5th, the first input end of bridge-type mixing unit;6th, bridge-type mixing unit The second input;7th, medium frequency output end mouthful;8th, the metal throuth hole on alumina substrate;9th, the metal on polyimide base film leads to Hole;10th, local oscillator microstrip balun;11st, radio frequency microstrip balun.
Embodiment
It is noted that described further below is all exemplary, it is intended to provide further instruction to the application.Unless another Indicate, all technologies used herein and scientific terminology are with usual with the application person of an ordinary skill in the technical field The identical meanings of understanding.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative It is also intended to include plural form, additionally, it should be understood that, when in this manual using term "comprising" and/or " bag Include " when, it indicates existing characteristics, step, operation, device, component and/or combinations thereof.
As shown in Fig. 2 one kind of the present invention is based on the passive double balanced mixer of multilayer Marchand microstrip baluns, it is two It is laminated on the dielectric substrate closed and realizes.
As shown in figure 1, the present invention's is micro- including radio frequency based on the passive double balanced mixer of multilayer Marchand microstrip baluns Bridge-type mixing unit with balun 11, local oscillator microstrip balun 10 and four mixer diode compositions;The radio frequency microstrip balun and Local oscillator microstrip balun is Marchand microstrip baluns.
The input 1 of radio frequency microstrip balun is set to the input of the passive double balanced mixer, and it connects radio frequency letter Number;The connection local oscillation signal of input 4 of local oscillator microstrip balun, the output end of radio frequency microstrip balun and the output of local oscillator microstrip balun End is respectively connecting to the input of bridge-type mixing unit;The output end of passive double balanced mixer is is with local oscillator microstrip balun 10 The medium frequency output end 7 that basis coupling is formed;The input and output end of bridge-type mixing unit and passive double balanced mixer are equal It is disposed on the same plane.
Wherein, the dielectric substrate of two layers of overlapping is directly conducted by the metal aperture on corresponding respective substrate, real The conversion of existing microstrip line.
The circuit production of the present invention is simple, small volume, realize circuit interconnection by plated through-hole and be grounded, it is to avoid tradition Interference in metal contact wires between signal, improves signal frequency range.
In the present embodiment, the orlop dielectric substrate in the dielectric substrate of two layers of overlapping is dielectric substrate material Expect for the alumina substrate of purity more than 99.6%.
It should be noted that the dielectric substrate of two layers of overlapping is the impedance matching principle in actual circuit demand Carry out selection, orlop dielectric substrate except be alumina substrate that dielectric substrate material is purity more than 99.6% it Outside, it can also be the aluminium nitride chip that dielectric substrate material is purity 98%.
Wherein, the thickness of orlop dielectric substrate is 0.1mm~0.5mm.
As shown in figure 3, the second output end 3 of bridge-type mixing unit, the second input 6 of bridge-type mixing unit, local oscillator are micro- First output end 2 of input 4, bridge-type mixing unit with balun, first input end 5, the alumina base of bridge-type mixing unit These may be contained within alumina substrate front for metal throuth hole 8 on piece, and its annexation is as shown in Figure 1.
As shown in figure 4, the metal throuth hole 8 on alumina substrate is all gold-plated hole.
Wherein, the superiors' dielectric substrate in the dielectric substrate of two layers of overlapping is that dielectric substrate material is purity More than 99% polyimide base film.
As shown in Figure 5 and Figure 6:9 be that circuit on circuit and alumina substrate on plated through-hole, polyimide base film leads to Metal throuth hole is crossed to be connected.
The thickness of the superiors' dielectric substrate is 0.01mm~0.15mm.
It should be noted that the dielectric substrate of two layers of overlapping is the impedance matching principle in actual circuit demand Carry out selection, the superiors' dielectric substrate except being polyimide base film that dielectric substrate material is purity more than 99%, Can also be according to the substrate of the specifically chosen other materials of actual conditions.
Wherein, as shown in fig. 7, the radio frequency microstrip balun and local oscillator microstrip balun connect bridge-type by upside-down mounting soldering respectively Mixing unit.Specifically, the second output end 3 of bridge-type mixing unit, the second input 6 of bridge-type mixing unit, bridge-type mixing First output end 2 of unit, the first input end 5 of bridge-type mixing unit are connected by upside-down mounting soldering,
This ensure that the pad of the mixer diode in bridge-type mixing unit is in same plane structure.
Specifically, it is described that single plane electricity is applied to based on the passive double balanced mixer of multilayer Marchand microstrip baluns Road.
Specifically, it is of the invention described cavity to be mounted on based on the passive double balanced mixer of multilayer Marchand microstrip baluns It is interior.
The present invention based on the passive double balanced mixer of multilayer Marchand microstrip baluns, local oscillator/radio frequency applications frequency model 10GHz-50Ghz, IF-FRE scope DC-10GHz are enclosed, fundamental wave conversion loss representative value is 10dB.
The present invention based on the passive double balanced mixer of multilayer Marchand microstrip baluns, be applicable frequency it is wide, circuit production Simply, it is easily achieved using traditional microwave production technology.Simultaneously in same media material, the circuit small volume is realized.
The present invention based on the passive double balanced mixer of multilayer Marchand microstrip baluns, it is possible to achieve microwave transmission is by non- Equilibrate to the conversion of poised state.The structure goes for the application of lower frequency, can also be changed according to the difference of frequency Physical dimension, but structural principle is constant.
Although above-mentioned the embodiment of the present invention is described with reference to accompanying drawing, not to present invention protection model The limitation enclosed, one of ordinary skill in the art should be understood that on the basis of technical scheme those skilled in the art are not Need to pay various modifications or deform still within protection scope of the present invention that creative work can make.

Claims (10)

1. one kind is based on the passive double balanced mixer of multilayer Marchand microstrip baluns, it is characterised in that what it was overlapped at two layers Realized on dielectric substrate;It is described that radio frequency microstrip bar is included based on the passive double balanced mixer of multilayer Marchand microstrip baluns The bridge-type mixing unit of human relations, local oscillator microstrip balun and four mixer diode compositions;The radio frequency microstrip balun and local oscillator micro-strip Balun is Marchand microstrip baluns;
The input of radio frequency microstrip balun is set to the input of the passive double balanced mixer, and it connects radiofrequency signal;This Shake the input connection local oscillation signal of microstrip balun, the output end difference of the output end of radio frequency microstrip balun and local oscillator microstrip balun It is connected to the input of bridge-type mixing unit;The output end of passive double balanced mixer is to be coupled based on local oscillator microstrip balun The medium frequency output end mouthful of formation;The input and output end of bridge-type mixing unit and passive double balanced mixer are arranged at together In one plane.
2. as claimed in claim 1 a kind of based on the passive double balanced mixer of multilayer Marchand microstrip baluns, its feature exists In the dielectric substrate of two layers of overlapping is directly conducted by the metal aperture on corresponding respective substrate, realizes microstrip line Conversion.
3. as claimed in claim 1 a kind of based on the passive double balanced mixer of multilayer Marchand microstrip baluns, its feature exists In the orlop dielectric substrate in the dielectric substrate of two layers of overlapping is that dielectric substrate material is purity more than 99.6% Alumina substrate.
4. as claimed in claim 1 a kind of based on the passive double balanced mixer of multilayer Marchand microstrip baluns, its feature exists In the orlop dielectric substrate in the dielectric substrate of two layers of overlapping is the nitridation that dielectric substrate material is purity 98% Aluminium substrate.
5. one kind as described in claim 3 or 4 is based on the passive double balanced mixer of multilayer Marchand microstrip baluns, its feature It is, the thickness of orlop dielectric substrate is 0.1mm~0.5mm.
6. one kind as described in claim 3 or 4 is based on the passive double balanced mixer of multilayer Marchand microstrip baluns, its feature It is, the superiors' dielectric substrate in the dielectric substrate of two layers of overlapping is that dielectric substrate material is purity more than 99% Polyimide base film.
7. as claimed in claim 6 a kind of based on the passive double balanced mixer of multilayer Marchand microstrip baluns, its feature exists In the thickness of the superiors' dielectric substrate is 0.01mm~0.15mm.
8. as claimed in claim 1 a kind of based on the passive double balanced mixer of multilayer Marchand microstrip baluns, its feature exists In the radio frequency microstrip balun and local oscillator microstrip balun connect bridge-type mixing unit by upside-down mounting soldering respectively.
9. as claimed in claim 1 a kind of based on the passive double balanced mixer of multilayer Marchand microstrip baluns, its feature exists In described to be applied to single plane circuit based on the passive double balanced mixer of multilayer Marchand microstrip baluns.
10. as claimed in claim 1 a kind of based on the passive double balanced mixer of multilayer Marchand microstrip baluns, its feature exists In described to be mounted on based on the passive double balanced mixer of multilayer Marchand microstrip baluns in cavity.
CN201710735592.5A 2017-08-24 2017-08-24 One kind is based on the passive double balanced mixer of multilayer Marchand microstrip baluns Pending CN107332516A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109525199A (en) * 2018-11-19 2019-03-26 中电科仪器仪表有限公司 Passive, double flat weighing apparatus I/Q frequency mixer based on multi-layer substrate microstrip circuit structure
CN112087214A (en) * 2020-09-15 2020-12-15 西安电子科技大学 TSV coupling and RDL interconnection on-chip passive balun and manufacturing process

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101510629A (en) * 2009-03-18 2009-08-19 东南大学 Seminorm substrate integration waveguide double-balance mixer and implementing method thereof
WO2010058892A2 (en) * 2008-11-19 2010-05-27 Electronics And Telecommunications Research Institute 3-way balun for planar-type double balanced mixer
US20140097882A1 (en) * 2012-10-08 2014-04-10 Marki Microwave, Inc. Mixer fabrication technique and system using the same
CN104868852A (en) * 2015-04-21 2015-08-26 中国电子科技集团公司第四十一研究所 Passive double balanced mixer based on novel groove line-microstrip Balun
CN106450631A (en) * 2016-11-21 2017-02-22 天津大学 Marchand balun based on complementary type metal coupling line

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058892A2 (en) * 2008-11-19 2010-05-27 Electronics And Telecommunications Research Institute 3-way balun for planar-type double balanced mixer
CN101510629A (en) * 2009-03-18 2009-08-19 东南大学 Seminorm substrate integration waveguide double-balance mixer and implementing method thereof
US20140097882A1 (en) * 2012-10-08 2014-04-10 Marki Microwave, Inc. Mixer fabrication technique and system using the same
CN104868852A (en) * 2015-04-21 2015-08-26 中国电子科技集团公司第四十一研究所 Passive double balanced mixer based on novel groove line-microstrip Balun
CN106450631A (en) * 2016-11-21 2017-02-22 天津大学 Marchand balun based on complementary type metal coupling line

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
奚望: "集成小型化混频器的研究", 《全国优秀硕士学位论文全文数据库 信息科技辑》 *
李珂等: "V波段双平衡混频芯片的设计", 《2017年全国微波毫米波会议》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109525199A (en) * 2018-11-19 2019-03-26 中电科仪器仪表有限公司 Passive, double flat weighing apparatus I/Q frequency mixer based on multi-layer substrate microstrip circuit structure
CN112087214A (en) * 2020-09-15 2020-12-15 西安电子科技大学 TSV coupling and RDL interconnection on-chip passive balun and manufacturing process
CN112087214B (en) * 2020-09-15 2023-03-14 西安电子科技大学 TSV coupling and RDL interconnection on-chip passive balun and manufacturing process

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Application publication date: 20171107