CN107492501A - The forming method of fin field effect pipe - Google Patents
The forming method of fin field effect pipe Download PDFInfo
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- CN107492501A CN107492501A CN201610420451.XA CN201610420451A CN107492501A CN 107492501 A CN107492501 A CN 107492501A CN 201610420451 A CN201610420451 A CN 201610420451A CN 107492501 A CN107492501 A CN 107492501A
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- 238000000034 method Methods 0.000 title claims abstract description 84
- 230000005669 field effect Effects 0.000 title claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 146
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 238000000926 separation method Methods 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 37
- 230000004888 barrier function Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 229910007260 Si2F6 Inorganic materials 0.000 claims description 3
- SDNBGJALFMSQER-UHFFFAOYSA-N trifluoro(trifluorosilyl)silane Chemical compound F[Si](F)(F)[Si](F)(F)F SDNBGJALFMSQER-UHFFFAOYSA-N 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 17
- 208000027418 Wounds and injury Diseases 0.000 abstract description 13
- 208000014674 injury Diseases 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 34
- 238000005516 engineering process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of forming method of fin field effect pipe, including：Offer include effective district, in the first edge area of effective district both sides and the substrate positioned at the second edge area of first edge area side, substrate formed with fin；Form the first graph layer on covering effective district fin and on first edge area fin；Etching removes the fin of second edge area first thickness；The second graph layer formed on covering effective district fin；Using second graph layer as mask, etching removes the fin of first edge area second thickness, and second thickness is less than first thickness.Fin is etched the amount of removal in first edge area substrate of the present invention by reducing adjacent effective district, so as to reduce or avoid second graph layer by etching injury, so as to prevent the fin in effective district substrate in etching environment, fin is avoided in effective district substrate by etching injury, ensure that the fin in effective district substrate has good pattern, the performance of the corresponding fin field effect pipe for be formed is improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of forming method of fin field effect pipe.
Background technology
With the continuous development of semiconductor process technique, the development trend that semiconductor technology node follows Moore's Law is continuous
Reduce.In order to adapt to the reduction of process node, it has to constantly shorten the channel length of MOSFET FETs.Channel length
Shorten the tube core density with increase chip, increase the benefits such as the switching speed of MOSFET FETs.
However, with the shortening of device channel length, the distance between device source electrode and drain electrode also shortens therewith, so
Grid is deteriorated to the control ability of raceway groove, and the difficulty of grid voltage pinch off (pinch off) raceway groove is also increasing so that subthreshold
Value electric leakage (subthreshold leakage) phenomenon, i.e., so-called short-channel effect (SCE：short-channel
Effects) it is easier to occur.
Therefore, in order to preferably adapt to the scaled requirement of device size, semiconductor technology gradually starts from plane
Transistor transient from mosfet transistor to the three-dimensional with more high effect, such as fin field effect pipe (FinFET).
In FinFET, grid can be at least controlled from both sides to ultra-thin body (fin), be had more much better than than planar MOSFET devices
Grid can be good at suppressing short-channel effect to the control ability of raceway groove；And FinFET has more preferable relative to other devices
The compatibility of existing production of integrated circuits technology.
However, the performance for the fin field effect pipe that prior art is formed needs further to be improved.
The content of the invention
It is of the invention to solve the problems, such as to be to provide a kind of forming method of fin field effect pipe, improve the fin field effect of formation
The electric property of pipe.
To solve the above problems, the present invention provides a kind of forming method of fin field effect pipe, including：Substrate, institute are provided
Stating substrate includes effective district, positioned at the first edge area of the effective district opposite sides, and the substrate is also included positioned at described the
The second edge area of one marginal zone side, wherein, the second edge area and the effective district are located at the first edge respectively
Area's opposite sides, and formed with discrete fin in effective district, first edge area and second edge area substrate；Described effective
The first graph layer is formed on area's fin and substrate and in first edge area fin and substrate；Using first graph layer to cover
Film, etching remove the fin of second edge area first thickness；Remove first graph layer；In the effective district fin and
Second graph layer is formed in substrate；Using the second graph layer as mask, etching removes the fin of first edge area second thickness,
And the second thickness is less than first thickness；Remove the second graph layer.
Optionally, remove the fin of second edge area first thickness in etching and etching removes the thickness of first edge area second
After the fin of degree, in addition to step：Formed on the substrate in effective district fin side wall and first edge area remains
Separation layer in remaining fin side wall, and less than at the top of the effective district fin at the top of the separation layer.
Optionally, the separation layer is also located in first edge area residue fin side wall, and is higher than at the top of the separation layer
At the top of the first edge area residue fin or with being flushed at the top of the first edge area residue fin.
Optionally, after the fin that etching removes first edge area second thickness, first edge area residue fin
Thickness for etching before first edge area fin thickness 1/5 to 2/3.
Optionally, the fin of first edge area second thickness is removed using dry etch process, etching.
Optionally, the technological parameter of the dry etch process includes：Etching gas include CF4、Si2F6、HCl、HBr、
Cl2, He, Ar or N2, etching gas flow is 40sccm to 80sccm, and etching reaction chamber pressure is 5 millitorrs to 50 millitorrs,
It is 200 watts to 2000 watts to etch power, and etching reaction chamber temp is 20 degree to 80 degree.
Optionally, the etch rate that etching removes the fin of second edge area first thickness is the first etch rate；
The etch rate that etching removes the fin of first edge area second thickness is the second etch rate, and second etching is fast
Rate is equal to the first etch rate.
Optionally, the etching duration that etching removes the fin of second edge area first thickness is the first duration；Etching
The etching duration for removing the fin of first edge area second thickness is the second duration, and when second duration is less than first
It is long.
Optionally, etching removes the technique of fin of second edge area first thickness and included, and etching removes described the
The fin of two marginal zone full depths, until exposing the substrate in second edge area.
Optionally, etching removes the technique of fin of second edge area first thickness and included, and etching removes described the
The fin of two marginal zone segment thicknesses, and higher than at the top of the second edge area residue fin at the top of the separation layer formed.
Optionally, on parallel to fin orientation, the distance between adjacent fin in the substrate is equal.
Optionally, on parallel to fin orientation, the distance between adjacent fin in the substrate be 5 angstroms~
100 angstroms.
Optionally, first etching removes the fin of second edge area first thickness, and rear etching removes first edge area the
The fin of two thickness.
Optionally, first etching removes the fin of first edge area second thickness, and it is thick that rear etching removes second edge area first
The fin of degree.
Optionally, the second graph floor is also located in second edge area substrate.
Optionally, the material of the second graph layer is photoresist；Forming the processing step of the second graph layer includes：
Initial graphics film, the initial graphics film also position are formed in the effective district, first edge area and second edge area substrate
In on fin；The initial graphics film above the first edge area is removed, forms the second graph layer.
Optionally, the quantity of the effective district fin is more than or equal to 1.
Optionally, before the separation layer is formed, hard mask layer is also formed with the fin top；And forming institute
In the technical process for stating separation layer, the hard mask layer is also removed.
Optionally, forming the processing step of the separation layer includes：Barrier film, the barrier film are formed on the substrate
In the fin side wall and top；Planarization process is carried out to the barrier film top surface；It is etched back to remove part
The barrier film of thickness forms the separation layer.
Optionally, in addition to step：Be developed across the grid structure of the effective district fin, the grid structure covered with
Imitate area's fin atop part and side wall；Processing is doped to the fin of the grid structure both sides, forms source and drain doping area.
Compared with prior art, technical scheme has advantages below：
In the technical scheme of fin field effect pipe provided by the invention, the distance between second edge area and effective district are more than
The distance between first edge region effective district, and formed in the effective district, first edge area and second edge area substrate
There is discrete fin；Form the first graph layer on covering effective district fin and on first edge area fin；With the first figure
Layer is mask, and etching removes the fin of second edge area first thickness；Then, the second graph formed on covering effective district fin
Layer, using second graph layer as mask, etching removes the fin of first edge area second thickness, and the second thickness is less than first
Thickness.Therefore the amount of present invention etching removal first edge area fin is less than the amount that etching removes second edge area fin so that
Etching is removed in the etching process of the second thickness fin in first edge area, quarter of the etching technics to second graph layer
Wound of deteriorating is smaller, prevents the fin in adjacent first edge area in effective district substrate to be exposed, so as to avoid effective district substrate
On fin by etching injury so that the fin in effective district substrate has a good pattern, and then improves the fin formed
The electric property of FET.
In alternative, formed on the substrate in the effective district fin side wall and first edge area residue fin
Separation layer in side wall, and less than effective district fin top at the top of the separation layer, and it is higher than institute at the top of the separation layer
State at the top of first edge area residue fin or flushed with institute's first edge area residue fin top.The separation layer is not only to having
Electric isolution effect is played between adjacent fin in effect area's substrate, also covers on first edge area residue fin, avoids the first side
The harmful effect that the fin exposure of edge area introduces.
Brief description of the drawings
Fig. 1 to Fig. 8 is the cross-sectional view for the fin field effect pipe forming process that one embodiment of the invention provides.
Embodiment
From background technology, the electric property for the fin field effect pipe that prior art is formed has much room for improvement.
In fin field effect pipe, substrate generally includes effective district and the marginal zone close to effective district, wherein, it is described effective
Formed with fin in the substrate in area, and do not have fin in the substrate of marginal zone.Generally, formed in the substrate of the effective district
The processing step of fin includes：Discrete fin is formed first in the substrate of effective district and in the substrate of marginal zone；Connect
, form the graph layer of fin in covering effective district substrate；Using the graph layer as mask, etching, which removes, is located at marginal zone substrate
On fin；Remove the graph layer.
However, using the above method formed fin field effect pipe in, the fin in effective district substrate can sustain damage, and make
Changed into fin pattern and size, effective district substrate, which tightens, suffers the damage that the fin of marginal zone is subject to and be particularly acute.
The main reason for through analyzing, causing this problem, includes：Gone because the fin in the substrate of marginal zone is etched completely
Remove, therefore the etch period of the etching technics is longer, causes graph layer to be lost by etching, the figure of particularly adjacent marginal zone
The damage that shape layer side wall is subject to is particularly acute, and is then caused the fin in effective district substrate to be exposed in etching environment, is caused
Fin in effective district substrate is etched；In addition, the graph layer is limited by photoetching process condition so that the edge of graph layer
Position precision has much room for improvement, and when the graph layer width in fin side wall is less than expected width, less etching injury is meeting
Fin side wall is caused to be exposed, this is also to cause effective district substrate to tighten to suffer the fin of marginal zone and be easily exposed on etching
One of the reason in environment.
To solve the above problems, the present invention provides a kind of forming method of fin field effect pipe, including：Substrate, institute are provided
Stating substrate includes effective district, positioned at the first edge area of the effective district opposite sides, and the substrate is also included positioned at described the
The second edge area of one marginal zone side, wherein, the second edge area and the effective district are located at the first edge respectively
Area's opposite sides, and formed with discrete fin in effective district, first edge area and second edge area substrate；Form covering institute
State the first graph layer on effective district fin and first edge area fin；Using first graph layer as mask, etching is gone
Except the fin of second edge area first thickness；Remove first graph layer；Formed and covered on the effective district fin
Second graph layer；Using the second graph layer as mask, etching removes the fin of first edge area second thickness, and described second
Thickness is less than first thickness；Remove the second graph layer.
In the present invention, substrate includes effective district, positioned at the first edge area of effective district opposite sides and positioned at the first side
The second edge area of edge area side, and the distance between second edge area and effective district are more than between the effective district of first edge region
Distance, and formed with discrete fin in the effective district, first edge area and second edge area substrate；Formed covered with
Imitate the first graph layer on area's fin and on first edge area fin；Using the first graph layer as mask, etching removes the second side
The fin of edge area first thickness；Then, the second graph layer formed on covering effective district fin, using second graph layer as mask,
Etching removes the fin of first edge area second thickness, and the second thickness is less than first thickness.Therefore present invention etching is gone
Except the amount of first edge area fin is less than the amount that etching removes second edge area fin so that etching removes the of first edge area
In the etching process of two thickness fins, the etching technics is smaller to the etching injury of second graph layer, prevents effective district
The fin in adjacent first edge area is exposed in substrate, so as to avoid the fin in effective district substrate by etching injury,
So that the fin in effective district substrate has good pattern, and then improve the electric property of the fin field effect pipe formed.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 1 to Fig. 8 is the cross-sectional view for the fin field effect pipe forming process that one embodiment of the invention provides.
With reference to figure 1, there is provided substrate 101, the substrate 101 include effective district 10, positioned at the opposite sides of effective district 10
First edge area 20, the substrate 101 also include positioned at the side of first edge area 20 second edge area 30, wherein,
The second edge area 30 and the effective district 10 are located at the opposite sides of first edge area 20, and effective district 10, respectively
Formed with discrete fin 102 on one marginal zone 20 and the substrate 101 of second edge area 30.
The first edge area 20 is located at the opposite sides of effective district 10 and the adjacent effective district 10；The effective district
10th, first edge area 20 and second edge area 30 are arranged in parallel successively.The fin 102 of the effective district 10 is effective fin
(effective fin), subsequently retain the fin 102 of the effective district 10；Subsequently it can also etch positioned at the He of first edge area 10
The fin 102 in second edge area 20.
It is described using the quantity of the fin 102 of effective district 10 as 3 as an example, in other embodiments in the present embodiment
The quantity of effective district fin can also be any natural number more than or equal to 1, for example, 1,5 or 10 etc..Described
The quantity of the fin 102 of one marginal zone 20 is any natural number more than or equal to 1, the quantity in the second edge area 30 be more than etc.
In 1 any natural number.
The material of the substrate 101 is silicon, germanium, SiGe, carborundum, GaAs or gallium indium, and the substrate 101 can also
It is enough the silicon base on insulator or the germanium substrate on insulator；The material of the fin 102 includes silicon, germanium, SiGe, carbon
SiClx, GaAs or gallium indium.In the present embodiment, the substrate 101 is silicon base, and the material of the fin 102 is silicon.
In the present embodiment, the substrate 101 is formed, the processing step of fin 102 includes：Initial substrate is provided；Described
Initial substrate surface forms patterned hard mask layer 103；With the hard mask layer 103 for initial substrate described in mask etching,
Initial substrate after etching is as substrate 101, and the projection positioned at the surface of substrate 101 is as fin 102.The effective district 10,
The thickness of fin 102 in one marginal zone 20 and second edge area 30 is identical.
In one embodiment, forming the processing step of the hard mask layer 103 includes：It is initially formed initial hard mask；
Patterned photoresist layer is formed in the initial hard mask surface；Using the patterned photoresist layer as described in mask etching
Initial hard mask, hard mask layer 103 is formed in initial substrate surface；Remove the patterned photoresist layer.In other implementations
In example, the formation process of the hard mask layer can also include：Self-alignment duplex pattern (SADP, Self-aligned
Double Patterned) triple graphical (the Self-aligned Triple Patterned) techniques of technique, autoregistration or
Graphical (the Self-aligned Double Double Patterned) technique of autoregistration quadruple.The Dual graphing technique
Including LELE (Litho-Etch-Litho-Etch) techniques or LLE (Litho-Litho-Etch) technique.
In the present embodiment, after the fin 102 is formed, retain the hard mask layer positioned at the top surface of fin 102
103.The material of the hard mask layer 103 is silicon nitride, subsequently when carrying out flatening process, the top of hard mask layer 103
It can play a part of protecting the top of fin 102 as the stop position of flatening process on surface.
In the present embodiment, the top dimension of the fin 102 is less than bottom size.In other embodiments, the fin
Side wall can also be perpendicular with substrate surface, i.e., the top dimension of fin is equal to bottom size.
The effective district 10, the marginal zone 30 of first edge area 20 and the 3rd fin 102 thickness it is identical, and parallel
In in the surface direction of substrate 101, the width of the effective district 10, first edge area 20 and the fin 102 in second edge area 30
It is identical.
On parallel to the orientation of fin 102, the distance between adjacent fin 102 in the substrate 101 is equal, from
And the etching load effect problem for avoiding etching from being formed in the technical process of fin 102 so that the pattern of the fin 102 of formation is good
It is good.In one embodiment, on parallel to the orientation of fin 102, in the substrate 101 between adjacent fin 102
Distance is 5 angstroms~100 angstroms.
With reference to figure 2, the first figure is formed on the fin 102 of effective district 10 and on the fin 102 of first edge area 20
Layer 104.
First graph layer 104 is also located in the substrate 101 of effective district 10 and in the substrate 101 of first edge area 20.
First graph layer 104 removes the technical process of the first thickness fin 102 of second edge area 30 in subsequent etching
In, the fin 102 of fin 102 and first edge area 20 to the effective district 10 plays protection and used.It is described in the present embodiment
The material of first graph layer 104 is Other substrate materials.In other embodiments, first graph layer can also be bottom anti-reflective
Penetrate the laminated construction of coating and photoresist layer.
Forming the processing step of first graph layer 104 includes：Formed and cover the fin 102, first of effective district 10
Initial graphics floor on the fin 102 of marginal zone 20 and the fin 102 of second edge area 30；The initial graphics layer is exposed
Processing and development treatment, the initial graphics floor on the fin 102 of second edge area 30 is removed, form first figure
Shape layer 104.
With reference to figure 3, etching removes the fin 102 of the first thickness of second edge area 30.
Specifically, being mask with first graph layer 104, etching removes the fin of the first thickness of second edge area 30
Portion 102.
The fin 102 in the second edge area 30 is non-effective fin, and using dry etch process, etching removes described the
The fin 102 of the first thickness of two marginal zone 30.In etching process, due to first graph layer 104 except covering is effective
Outside the fin 102 in area 10, also on the fin 102 in covering first edge area 20, therefore second edge area 30 first is removed in etching
In the technical process of the fin 102 of thickness, even if the side wall of the first graph layer 104, by etching injury, what is be exposed is
The fin 102 in first edge area 20, without causing the fin 102 of effective district 10 to be exposed.Therefore institute is removed in etching
During the fin 120 for stating second edge area 30, the fin 102 of the effective district 10 is by sufficiently strong protective effect, effectively
The fin 102 for avoiding effective district 10 by etching injury.
In the present embodiment, the technique that etching removes the fin 102 of the first thickness of second edge area 30 includes, and etching is gone
Except the fin 102 of the full depth of second edge area 30, until exposing the substrate 101 in second edge area 30.To ensure second
The fin 102 of marginal zone 30 is removed by complete etching, can also carry out over etching work to the substrate 101 in the second edge area 30
Skill.
It should also be noted that, in other embodiments, etching removes the fin of second edge area first thickness
Technique can also be that etching removes the fin of second edge area segment thickness, and is higher than at the top of the separation layer being subsequently formed
At the top of the second edge area residue fin.It is this is because, at least remaining with first edge area at the top of the separation layer being subsequently formed
Flushed at the top of fin, and higher than second edge area residue fin top at the top of first edge area residue fin, therefore be subsequently formed
Separation layer at the top of should be higher than that at the top of the second edge area residue fin.
Then, first graph layer 104 is removed.Removed photoresist using wet method or cineration technics removes first graph layer
104。
With reference to figure 4, second graph layer 105 is formed on the fin 102 of effective district 10 and in substrate 101.Described
Two graph layers 105 play guarantor in the technical process of the fin 102 of subsequent etching first edge area 10, to the fin 102 of effective district 10
Shield acts on.And in order to avoid subsequent etching processes cause over etching, the second graph layer to the substrate 101 of second edge area 30
105 may be located in the substrate 101 of second edge area 30.
In the present embodiment, the material of the second graph layer 105 is photoresist；Form the work of the second graph layer 105
Skill step includes：Initial graphics film, institute are formed in the effective district 10, first edge area 20 and the substrate of second edge area 30
Initial graphics film is stated to be also located on fin 102；Processing is exposed to the initial graphics film and development treatment, removal are located at
The initial graphics film of the top of first edge area 20, forms the second graph layer 105.
With reference to figure 5, etching removes the fin 102 of the second thickness of first edge area 20, and the second thickness is less than first
Thickness.
Specifically, being mask with the second graph layer 105, etching removes the fin of the second thickness of first edge area 20
102。
Using dry etch process, etching removes the fin 102 of the second thickness of first edge area 20.In the present embodiment, institute
Stating the technological parameter of dry etch process includes：Etching gas include CF4、Si2F6、HCl、HBr、Cl2, He, Ar or N2, etch gas
Body flow is 40sccm to 80sccm, and etching reaction chamber pressure is 5 millitorrs to 50 millitorrs, etching power be 200 watts extremely
2000 watts, etching reaction chamber temp is 20 degree to 80 degree.
Because second thickness is less than first thickness, that is to say, that the amount that the fin 102 of first edge area 20 is removed is less than the
The amount that the fin 102 of two marginal zone 30 is removed, therefore etch the etching work for the fin 102 for removing the second thickness of first edge area 20
Skill is smaller to the etching injury of the second graph layer 105, so as to prevent the fin 102 in the substrate 101 of effective district 10 to be exposed to
Etch in environment, the fin 102 that particular avoid adjacent first edge area 20 in the substrate 101 of effective district 10 is exposed to etched rings
In border, ensure that the fin 102 in the substrate 101 of effective district 10 keeps good pattern.
The second thickness and the thickness of fin 102 in first edge area 10 and the thickness for the separation layer being subsequently formed before etching
Spend relevant, the top of fin 102 remaining with the first edge area 20 is flush or above described the at the top of the separation layer that is subsequently formed
One marginal zone, the 20 remaining top of fin 102.
The first thickness is unsuitable excessively thin, after being otherwise subsequently formed separation layer, the remaining top of fin 102 in first edge area 20
It is exposed with side wall；The second thickness is also unsuitable blocked up, and otherwise etching removes the quarter needed for the fin 102 of second thickness
The erosion time is longer, then the etching injury that the side wall of second graph layer 105 is subject to is serious, easily causes in the substrate 101 of effective district 10
The side wall of fin 102 in adjacent first edge area 20 is in etching environment.Therefore, in the present embodiment, described in etching removal
After the fin 102 of the first thickness of first edge area 20, the thickness of the remaining fin 102 in first edge area 20 is the first side before etching
The 1/5 to 2/3 of the thickness of 20 fin of edge area 102.
In the present embodiment, the etch rate that etching removes the fin 102 of the first thickness of second edge area 30 is first
Etch rate；The etch rate that etching removes the fin 102 of the second thickness of first edge area 20 is the second etch rate, and
Second etch rate is equal to the first etch rate.Accordingly, etching removes the fin of the first thickness of second edge area 30
The etching duration in portion 102 is the first duration；When the etching duration that etching removes the second thickness of first edge area 20 is second
It is long, and second duration is less than the first duration.
In other embodiments, first etch rate is also less than or more than the second etch rate, accordingly,
Two durations can also be more than or equal to the first duration.
With reference to figure 6, remove the second graph layer 105 (with reference to figure 5).
In the present embodiment, the material of the second graph layer 105 is photoresist, is removed photoresist using wet method or cineration technics, is gone
Except the second graph layer 105.
It should be noted that in the present embodiment, first etching removes the fin 102 of the first thickness of second edge area 30,
Etching removes the fin 102 of the second thickness of first edge area 20 afterwards.In other embodiments, it can also first etch and remove the first side
The fin of edge area second thickness, rear etching remove the fin of second edge area first thickness.
Subsequently also include step：Formed in the substrate 101 in the side wall of 10 fin of effective district 102 and first
Separation layer in the remaining side wall of fin 102 in marginal zone 20, and pushed up at the top of the separation layer less than the fin 102 of effective district 10
Portion.The processing step for forming separation layer is described in detail below with reference to accompanying drawing.
With reference to figure 7, barrier film 106 is formed in the substrate 101, the barrier film 106 is also located at the side of fin 102
On wall and on top；Planarization process is carried out to the top surface of barrier film 106.
In the present embodiment, the barrier film 106 is also located in the side wall of hard mask layer 103, and is pushed up to the barrier film 106
After portion surface carries out planarization process, the top of barrier film 106 flushes with the top of hard mask layer 103.
The barrier film 106 provides Process ba- sis to be subsequently formed separation layer；The material of the barrier film 106 is insulation material
Material, for example, silica, silicon nitride or silicon oxynitride.In the present embodiment, the material of the barrier film 106 is silica.
In order to improve filling perforation (gap-filling) ability to form the technique of barrier film 106, using mobility chemical vapor deposition
Product (FCVD, Flowable CVD) or high vertical width form the barrier film 106 than chemical vapor deposition method (HARP CVD).
In a specific embodiment, the formation process of the barrier film 106 includes：Formed using mobility chemical vapor deposition method
Forerunner's barrier film；Annealing curing process is carried out to forerunner's barrier film, forerunner's barrier film is converted into barrier film 106.
In the present embodiment, using chemical mechanical milling tech, grinding removes the barrier film higher than the top of hard mask layer 103
106, until the top of remaining barrier film 106 flushes with the top of hard mask layer 103.
It should also be noted that, in order to improve the interface performance between fin 102 and barrier film 106, formed it is described every
Before film, cushion oxide layer (liner oxide layer) can also be formed in the side wall of fin 102.
With reference to figure 8, it is etched back to remove the barrier film 106 (with reference to figure 7) of segment thickness, position is formed in the substrate 101
In the separation layer 116 in the side wall of 10 fin of effective district 102 and in the remaining side wall of fin 102 in first edge area 20, and it is described every
The top of absciss layer 116 is less than the top of 10 fin of effective district 102.
Isolation structure of the separation layer 116 as fin field effect pipe, play a part of being electrically isolated adjacent fin 102.
The work being combined using dry etch process, wet-etching technology or dry etch process with wet-etching technology
Skill, etching remove the barrier film 106 of segment thickness.In the present embodiment, etched using wet-etching technology and remove segment thickness
Barrier film 106, the etch liquids that wet-etching technology uses is hydrofluoric acid solutions.
In the present embodiment, the top of separation layer 116 is higher than the remaining top of fin 102 in the first edge area 20.At it
, can also be with being flushed at the top of first edge area residue fin at the top of the separation layer in his embodiment.
In addition it is also necessary to explanation, in other embodiments, foregoing etching remove the fin of second edge area first thickness
The technique in portion is that when etching removes the fin of second edge area segment thickness, the separation layer of formation is also located at second edge
At the top of area's residue fin and in side wall.
In the technical process for forming the separation layer 116, also remove the hard mask layer 103 (with reference to figure 3)；This implementation
In example, the material of the hard mask layer 103 is silicon nitride, and it is molten for phosphoric acid that etching removes the etch liquids that hard mask layer 103 uses
Liquid.
In one embodiment, before being etched back to remove the separation layer 106 of segment thickness, the hard mask layer is removed
103；In another embodiment, the hard mask layer can also be removed after being etched back to remove the separation layer 106 of segment thickness
103。
Follow-up processing step also includes：It is developed across the grid structure of the fin 102 of effective district 10, the grid knot
The atop part of 10 fin of structure covering effective district 102 and side wall；Processing is doped to the fin 102 of the grid structure both sides,
Form source and drain doping area.
Because the distance between first edge area and effective district are less than the distance between second edge area and effective district, therefore
In the case of etch process parameters identical, etching removes influence of the first edge area's fin to effective district fin and gone more than etching
Except influence of the second edge area fin to effective district fin.
In the fin field effect pipe that the present embodiment is formed, the amount that etching removes the fin 102 of first edge area 20 is gone with etching
Except the measurer of the fin 102 of second edge area 30 is variant.Specifically, be removed with the fin 102 of second edge area 30
One thickness is compared, the fin 102 of first edge area 20 of adjacent effective district 10 be etched removal second thickness it is smaller, therefore, carve
Etching off is removed in the technical process of 20 fin of first edge area 102, the second graph floor in the effective district 10 in adjacent first edge area 20
105 etching injuries being subject to (with reference to figure 5) are smaller, accordingly cause adjacent first edge area 20 the fin 102 of effective district 10 by
Harmful effect reduce, so as to avoid the fin 102 of effective district 10 by etching injury, it is good to ensure that the fin 102 of effective district 10 has
Good pattern, improve the electric property of the fin field effect pipe of formation.
In a specific embodiment, remove the fin 102 of first edge area 20 in etching and etching removes second edge area
Under the same conditions, etching removes needed for the fin 102 of the second thickness of first edge area 20 the etch rate parameter of 30 fins 102
Etching duration be the second duration, etching remove needed for the fin 102 of the first thickness of second edge area 30 when a length of first when
Long, the second duration is significantly less than the first duration；Therefore the etch period of the fin 102 of etching removal first edge area 20 is short, so as to
Avoid second graph layer 105 (with reference to figure 5) side wall to sustain damage, prevent the side wall of 10 fin of effective district 102 to be exposed, so as to
Reduce and even avoid the fin 102 of etching removal first edge area 20 to damage problem caused by the fin 102 of effective district 10, ensure
Fin 102 has good pattern in the substrate 101 of effective district 10.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (20)
- A kind of 1. forming method of fin field effect pipe, it is characterised in that including：Substrate is provided, the substrate includes effective district, positioned at the first edge area of the effective district opposite sides, and the substrate is also Including positioned at the second edge area of first edge area side, wherein, the second edge area and effective district difference position In first edge area opposite sides, and formed with discrete in effective district, first edge area and second edge area substrate Fin；The first graph layer is formed on the effective district fin and substrate and in first edge area fin and substrate；Using first graph layer as mask, etching removes the fin of second edge area first thickness；Remove first graph layer；Second graph layer is formed on the effective district fin and substrate；Using the second graph layer as mask, etching removes the fin of first edge area second thickness, and the second thickness is small In first thickness；Remove the second graph layer.
- 2. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that remove second edge area in etching After the fin and etching of first thickness remove the fin of first edge area second thickness, in addition to step：In the substrate The upper separation layer formed in effective district fin side wall and in first edge area residue fin side wall, and the separation layer top Portion is less than at the top of the effective district fin.
- 3. the forming method of fin field effect pipe as claimed in claim 2, it is characterised in that the separation layer is also located at first In the residue fin side wall of marginal zone, and at the top of the separation layer higher than at the top of the first edge area residue fin or with it is described Flushed at the top of first edge area residue fin.
- 4. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that remove first side in etching After the fin of edge area second thickness, the thickness of first edge area residue fin is the fin thickness in first edge area before etching 1/5 to 2/3.
- 5. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that using dry etch process, carve Etching off removes the fin of first edge area second thickness.
- 6. the forming method of fin field effect pipe as claimed in claim 5, it is characterised in that the work of the dry etch process Skill parameter includes：Etching gas include CF4、Si2F6、HCl、HBr、Cl2, He, Ar or N2, etching gas flow be 40sccm extremely 80sccm, etching reaction chamber pressure are 5 millitorrs to 50 millitorrs, and etching power is 200 watts to 2000 watts, etching reaction chamber temperature Spend for 20 degree to 80 degree.
- 7. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that etching removes the second edge The etch rate of the fin of area's first thickness is the first etch rate；Etching removes the fin of first edge area second thickness Etch rate be the second etch rate, and second etch rate is equal to the first etch rate.
- 8. the forming method of fin field effect pipe as claimed in claim 7, it is characterised in that etching removes the second edge The etching duration of the fin of area's first thickness is the first duration；Etching removes the quarter of the fin of first edge area second thickness A length of second duration during erosion, and second duration is less than the first duration.
- 9. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that etching removes the second edge The technique of the fin of area's first thickness includes, and etching removes the fin of second edge area full depth, until exposing second The substrate of marginal zone.
- 10. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that etching removes second side The technique of the fin of edge area first thickness includes, and etching removes the fin of second edge area segment thickness, and the institute formed State at the top of separation layer higher than at the top of the second edge area residue fin.
- 11. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that parallel to fin arrangement side Upwards, the distance between adjacent fin in the substrate is equal.
- 12. the forming method of fin field effect pipe as claimed in claim 11, it is characterised in that parallel to fin arrangement side Upwards, the distance between adjacent fin in the substrate is 5 angstroms~100 angstroms.
- 13. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that first etching removes described second The fin of marginal zone first thickness, rear etching remove the fin of first edge area second thickness.
- 14. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that first etching removes first edge The fin of area's second thickness, rear etching remove the fin of second edge area first thickness.
- 15. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that the second graph layer also position In in second edge area substrate.
- 16. the forming method of fin field effect pipe as claimed in claim 15, it is characterised in that the material of the second graph layer Expect for photoresist；Forming the processing step of the second graph layer includes：On the effective district, first edge area and the second side Initial graphics film is formed in edge area substrate, the initial graphics film is also located on fin；Remove in the first edge area The initial graphics film of side, forms the second graph layer.
- 17. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that the number of the effective district fin Amount is more than or equal to 1.
- 18. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that formed the separation layer it Before, it is also formed with hard mask layer on the fin top；And in the technical process for forming the separation layer, also remove described hard Mask layer.
- 19. the forming method of fin field effect pipe as claimed in claim 18, it is characterised in that form the work of the separation layer Skill step includes：Barrier film is formed on the substrate, and the barrier film is located on the fin side wall and top；To described Barrier film top surface carries out planarization process；The barrier film for being etched back to remove segment thickness forms the separation layer.
- 20. the forming method of fin field effect pipe as claimed in claim 1, it is characterised in that also including step：It is developed across the grid structure of the effective district fin, the grid structure covering effective district fin atop part and side Wall；Processing is doped to the fin of the grid structure both sides, forms source and drain doping area.
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| CN1976059A (en) * | 2005-11-30 | 2007-06-06 | 国际商业机器公司 | Fin type field effect transistor structure and method of manufacturing the same |
| US20130217233A1 (en) * | 2012-02-22 | 2013-08-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for Controlling Line Dimensions in Spacer Alignment Double Patterning Semiconductor Processing |
| US20130309838A1 (en) * | 2012-05-17 | 2013-11-21 | Globalfoundries Inc. | Methods for fabricating finfet integrated circuits on bulk semiconductor substrates |
| US20150206759A1 (en) * | 2014-01-21 | 2015-07-23 | United Microelectronics Corp. | Semiconductor structure and manufacturing method thereof |
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|---|---|---|---|---|
| CN1976059A (en) * | 2005-11-30 | 2007-06-06 | 国际商业机器公司 | Fin type field effect transistor structure and method of manufacturing the same |
| US20130217233A1 (en) * | 2012-02-22 | 2013-08-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for Controlling Line Dimensions in Spacer Alignment Double Patterning Semiconductor Processing |
| US20130309838A1 (en) * | 2012-05-17 | 2013-11-21 | Globalfoundries Inc. | Methods for fabricating finfet integrated circuits on bulk semiconductor substrates |
| US20150206759A1 (en) * | 2014-01-21 | 2015-07-23 | United Microelectronics Corp. | Semiconductor structure and manufacturing method thereof |
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