CN107482103A - A kind of preparation method of the flip LED white chip of wafer-level package - Google Patents
A kind of preparation method of the flip LED white chip of wafer-level package Download PDFInfo
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- CN107482103A CN107482103A CN201710712974.6A CN201710712974A CN107482103A CN 107482103 A CN107482103 A CN 107482103A CN 201710712974 A CN201710712974 A CN 201710712974A CN 107482103 A CN107482103 A CN 107482103A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 45
- 238000003825 pressing Methods 0.000 claims abstract description 31
- 238000005520 cutting process Methods 0.000 claims abstract description 12
- 238000012512 characterization method Methods 0.000 claims abstract description 6
- 239000012528 membrane Substances 0.000 claims description 32
- 229910000831 Steel Inorganic materials 0.000 claims description 13
- 239000010959 steel Substances 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 11
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 230000033228 biological regulation Effects 0.000 claims description 3
- 238000005070 sampling Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 8
- 229920006280 packaging film Polymers 0.000 abstract description 4
- 239000012785 packaging film Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 2
- 238000009877 rendering Methods 0.000 abstract description 2
- 238000004062 sedimentation Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000004806 packaging method and process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004643 material aging Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of preparation method of the flip LED white chip of wafer-level package, including process for pressing, curing process, cutting technique, characterization processes, the preparation method avoids fluorescent material sedimentation, so that the lot stability of flip LED white chip is high, colour temperature is consistent, and controllable upper surface packaging film thickness adjusts the optical properties such as uniformity of luminance, colour temperature, colour rendering index with side packaging film thickness.
Description
Technical field
The present invention relates to LED chip preparation field, more particularly to a kind of system of the flip LED white chip of wafer-level package
Preparation Method.
Background technology
Light source is as a kind of novel green lighting source for light emitting diode (Light Emitting Diode), with it without dirt
The features such as dye, long-life, low-loss, photochromic pure, vibration resistance, is widely used in the world.Wafer-level package
LED is because having the characteristics such as small encapsulation volume, perfect heat-dissipating, luminous uniform, long lifespan wide concerned and with its using flexible
The characteristics of high, turns into industry new lover in recent years.
Fluorescence membrane has excitation-emission efficiency high, by thermostabilization, mechanical strength compared to fluorescent material, and packaging technology is simple etc.
Advantage, it is highly suitable as the packaging body instead of filling glue and is adapted to a large amount of productions.Have tried to fluorescence membrane to falling
Cartridge chip carries out wafer-level package：The bear of Guangzhou Hongli Tronic Co., Ltd. is firm etc. to have developed a kind of wafer-level package side
Method (" wafer-level package LED forming methods and wafer-level package LED ", number of patent application：201511013222.8), this method
Though reached the effect of wafer-level package complex process, and to be bonded in technique on chip coarse for packaging body, unstable.
The faithful and honest Zheng Min up to Trade Co., Ltd. in Xiamen have developed a kind of chip-scale packaging method of positive cartridge chip, and (" formal dress chip-scale is white
Light LED filament light source and its method for packing ", number of patent application：20161072532.7), equally use the method for fitting still
Positive cartridge chip has very big inferior position relative to flip-chip performance, it is encapsulated also pretty troublesome, and is not suitable for for making chip-scale
Encapsulation.The method that Tan Xiao China of Tianjin moral high chemical conversion new material limited company et al. employs press mold prepares film, (chip-scale
The preparation method of the flip LED white chip of encapsulation, number of patent application：201510245273.7) but largely used solidification
Adhesive tape, make the increase of technique destabilizing factor.It is not suitable for batch into production.Presently disclosed document and patent are sealed on chip-scale
The quick-reading flow sheets of dress, elaboration is not made to performance, we are improved in addition regarding to the issue above, and prepare high-performance
Wafer-level package LED.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of preparation side of the flip LED white chip of wafer-level package
Method, the preparation method avoid fluorescent material sedimentation, so that the lot stability of flip LED white chip is high, colour temperature is consistent,
And controllable upper surface packaging film thickness adjusts uniformity of luminance, colour temperature, colour rendering index with side packaging film thickness
Etc. optical property.
To solve the above problems, the technical scheme is that：
A kind of preparation method of the flip LED white chip of wafer-level package, including process for pressing, curing process, cutting
Technique, characterization processes, wherein：
Process for pressing comprises the following steps,
S1：Flip-chip is placed on die bond steel plate；
S2：The die bond steel plate for being placed with the flip-chip is placed on to the upper surface of the lower template of pressing machine, and
Padded is placed below the lower template；
S3：Ready-made fluorescence membrane in advance is fitted in the lower surface of the cope plate of the pressing machine；
S4：Start the pressing machine, begun to warm up inside the pressing machine, is heated to after the fluorescence membrane starts softening
The internal temperature of the pressing machine is set to be maintained at the temperature more than 30 minutes that the fluorescence membrane starts softening again；
S5：The cope plate starts to push, and the cope plate presses with the lower template；
S6：It after pressing 5~10 minutes, can mold after the fluorescence membrane reaches Surface hardened layer, and will press
The die bond steel plate for being placed with the flip-chip takes out；
Curing process comprises the following steps,
S7：The die bond steel plate for being placed with the flip-chip pressed in step S6 is put into baking box to be toasted
Solidification；
Cutting technique comprises the following steps,
S8：Accurately drawn with the cutter of scribing machine and different-thickness-by the flip-chip being cured in step S7
Cut, obtain regulation lateral thickness-single chip level encapsulation LED；
Characterization processes comprise the following steps,
S9：The encapsulation of single chip level described in step S8 LED is subjected to sampling observation test, exact p-value result on integrating sphere
After meeting customer requirement, shipment is packed.
In an embodiment of the present invention, also include between the step S4 and the step S5：
Vacuumize：Make to start to vacuumize inside the pressing machine, the vacuum vacuumized is -95~-100Kpa scopes
It is described to vacuumize stopping when interior.
In an embodiment of the present invention, the baking-curing temperature of baking box described in the step S7 is 150 DEG C~180 DEG C,
Baking time is 3~3.5 hours.
In an embodiment of the present invention, in the step S5, the pressure of the pressing is 20-30Kgf/cm2。
In the present invention, the fluorescence membrane is mixed by one or more heat conductive silica gels and one or more fluorescent material
Membranaceous fluorophor.
In the present invention, the flip LED chips are the disposable type with pilework, any photochromic LED chip.
The present invention makes it have the following advantages that and actively imitate compared with prior art due to using above technical scheme
Fruit：
(1) technical scheme of fluorescent material is substituted with fluorescence membrane, has excitation-emission efficiency high, physical and chemical performance steady
The series of advantages such as calmly, high homogeneity, thermal conductivity are high, aftertreatment technology is simple, overcome the stability of fluorescent powder packaging poor, easy
The problems such as aging.
(2) it is simple using inverted structure LED chip die bond technique, good heat dissipation.
(3) present invention can control top capsulation fluorescence membrane thickness, Ke Yitong using the method for padded height of control
The thickness for crossing control cutting tool controls side fluorescence membrane package thickness, the top fluorescence membrane package thickness of arranging in pairs or groups different
It can reach different Luminescence Uniformity, colour temperature, aobvious finger and photochromic requirement from side fluorescence membrane package thickness, meet actual
Living environment is to luminous requirement.
(4) the flip LED encapsulating structure of the wafer-level package is simple, and its manufacture craft is simple, avoids in original technique
Mixed glue and gluing process, improve production efficiency, yield rate and production cost are greatly lowered, and are adapted to large-scale industrialization life
Production.
Brief description of the drawings
Fig. 1 is the schematic diagram of process for pressing in the present invention.
Fig. 2 is the schematic diagram of cutting technique in the present invention.
Fig. 3 is the schematic diagram of encapsulating structure in the present invention.
The light distribution curve of Fig. 4 SMIS chip size package flip LED white chips of the present invention.
The side fluorescence membrane thickness of 11 top surface fluorescence membrane package thickness of 1- fluorescence membranes 12
2- flip LED chips
3- die bond steel plates
4- cope plates
5- lower templates
Padded of 6-
7- cutter
Embodiment
Flip LED white light core below in conjunction with the drawings and specific embodiments to a kind of wafer-level package proposed by the present invention
The preparation method of piece is described in further detail.According to following explanation and claims, advantages and features of the invention will more
It is clear.It should be noted that accompanying drawing uses using very simplified form and non-accurately ratio, only to convenient, apparent
Ground aids in illustrating the purpose of the embodiment of the present invention.
Referring to Fig. 1, Fig. 2, Fig. 3, a kind of preparation method of the flip LED white chip of wafer-level package, including pressing work
Skill, curing process, cutting technique, characterization processes, specifically include following steps：
S1：Flip-chip 2 is placed on die bond steel plate 3；
It is simple using inverted structure LED chip die bond technique in the present embodiment, good heat dissipation.
S2：The die bond steel plate 3 for being placed with flip-chip 2 is placed on to the upper surface of the lower template 5 of pressing machine, and in lower template
Padded 6 is placed below 5；
In specific implementation process, using the method for padded 6 height of control top capsulation fluorescence membrane can be controlled thick
Degree 11.
S3：Ready-made fluorescence membrane 1 in advance is fitted in the lower surface of the cope plate 4 of pressing machine；
In the present embodiment, the technical scheme of fluorescent material is substituted with fluorescence membrane, there is excitation-emission efficiency high, physical chemistry
The series of advantages such as stable performance, high homogeneity, thermal conductivity are high, aftertreatment technology is simple, overcome the stabilization of fluorescent powder packaging
The problems such as property is poor, easy to aging.Fluorescence membrane 1 is mixed by one or more heat conductive silica gels and one or more fluorescent material
Membranaceous fluorophor.
S4：Start pressing machine, begun to warm up inside pressing machine, be heated to make pressing machine again after fluorescence membrane 1 starts softening
Internal temperature be maintained at the temperature more than 30 minutes that fluorescence membrane 1 starts softening；
S5：Cope plate 4 starts to push, and cope plate 4 presses with lower template 5；
S6：After pressing 5~10 minutes, it can be molded after fluorescence membrane 1 reaches Surface hardened layer, and the placement that will have been pressed
The die bond steel plate 3 for having flip-chip 2 takes out；
S7：The die bond steel plate 3 for being placed with flip-chip 2 pressed in step S6 is put into baking box and carries out baking-curing；
S8：The flip-chip 2 being cured in step S7 is subjected to accurate cutting-up with the cutter 7 of scribing machine and different-thickness,
Obtain the single chip level encapsulation LED of regulation lateral thickness 12；
In specific implementation process, by controlling the thickness of cutting tool 7 side fluorescence membrane encapsulation can be controlled thick
Degree 12.It should be noted that using very thin cutting tool, the minor variations of control cutting distance can also take identical effect to
Fruit, it can also be cut using wire cutting machine.
Referring to Fig. 4, wafer-level package LED prepared by the present invention has the distribution curve flux of the shape of a saddle, and Luminescence Uniformity is high, hair
Angular is wide.When top capsulation fluorescence membrane thickness and side encapsulate fluorescence membrane thickness proportion close to 2:It can be obtained not when 1
With color temperature value relatively uniform under angle.The top fluorescence membrane package thickness 11 for arranging in pairs or groups different and the encapsulation of side fluorescence membrane are thick
Degree 12 can reach different Luminescence Uniformity, colour temperature, aobvious finger and photochromic requirement.Meet that real life environments will to luminous
Ask.
S9：Single chip level encapsulation LED in step S8 is subjected to sampling observation test on integrating sphere, exact p-value result meets
After customer requirement, shipment is packed.
The flip LED encapsulating structure of the present embodiment SMIS chip size package is simple, and its manufacture craft is simple, avoids original work
Glue and gluing process are mixed in skill, improves production efficiency, yield rate and production cost is greatly lowered, is adapted to large-scale industrialization
Production.
In one embodiment, also include between step S4 and step S5：
Vacuumize：Make to start to vacuumize inside pressing machine, the vacuum vacuumized is in the range of -95~-100Kpa
When, vacuumize stopping.Vacuum section is in the preferred section of experimental determination, can ensure fluorescence membrane 1 and flip LED core
There is no bubble between piece 2.
In one embodiment, the baking-curing temperature of baking box is 150 DEG C~180 DEG C in step S7, baking time 3
~3.5 hours.
In one embodiment, in step S5, the pressure of pressing is 20-30Kgf/cm2。
Embodiments of the present invention are explained in detail above in conjunction with accompanying drawing, but the present invention is not limited to above-mentioned implementation
Mode.Even if to the present invention, various changes can be made, if these changes belong to the model of the claims in the present invention and its equivalent technologies
Within enclosing, then still fall among protection scope of the present invention.
Claims (4)
1. the preparation method of the flip LED white chip of a kind of wafer-level package, it is characterised in that including process for pressing, solidification
Technique, cutting technique, characterization processes, wherein：
Process for pressing comprises the following steps,
S1：Flip-chip (2) is placed on die bond steel plate (3)；
S2：The die bond steel plate (3) for being placed with the flip-chip (2) is placed on to the upper surface of the lower template (5) of pressing machine,
And padded (6) are placed below the lower template (5)；
S3：The lower surface that ready-made fluorescence membrane (1) is fitted in the cope plate (4) of the pressing machine will be shifted to an earlier date；
S4：Start the pressing machine, begun to warm up inside the pressing machine, is heated to after the fluorescence membrane (1) starts softening
The internal temperature of the pressing machine is set to be maintained at the temperature more than 30 minutes of the fluorescence membrane (1) softening again；
S5：The cope plate (4) starts to push, and the cope plate (4) presses with the lower template (5)；
S6：Pressing 5~10 minutes, the fluorescence membrane (1) molds after reaching Surface hardened layer, and being placed with for having pressed is described
The die bond steel plate (3) of flip-chip (2) is taken out；
Curing process comprises the following steps,
S7：The die bond steel plate (3) for being placed with the flip-chip (2) pressed in step S6 is put into baking box to be dried
Roasting solidification；
Cutting technique comprises the following steps,
S8：The flip-chip (2) being cured in step S7 is accurately drawn with the cutter of scribing machine and different-thickness (7)
Cut, obtain the single chip level encapsulation LED of regulation lateral thickness (12)；
Characterization processes comprise the following steps,
S9：The encapsulation of single chip level described in step S8 LED is subjected to sampling observation test on integrating sphere, exact p-value result meets
After customer requirement, shipment is packed.
A kind of 2. preparation method of the flip LED white chip of wafer-level package as claimed in claim 1, it is characterised in that
Also include between the step S4 and the step S5：
Vacuumize：Make to vacuumize inside the pressing machine, it is described when the vacuum vacuumized is in the range of -95~-100Kpa
Vacuumize stopping.
A kind of 3. preparation method of the flip LED white chip of wafer-level package as claimed in claim 1, it is characterised in that
The baking-curing temperature of baking box described in the step S7 is 150 DEG C~180 DEG C, and baking time is 3~3.5 hours.
A kind of 4. preparation method of the flip LED white chip of wafer-level package as claimed in claim 1, it is characterised in that
In the step S5, the pressure of the pressing is 20-30Kgf/cm2。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710712974.6A CN107482103B (en) | 2017-08-18 | 2017-08-18 | A kind of preparation method of the flip LED white chip of wafer-level package |
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| CN201710712974.6A CN107482103B (en) | 2017-08-18 | 2017-08-18 | A kind of preparation method of the flip LED white chip of wafer-level package |
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| CN107482103A true CN107482103A (en) | 2017-12-15 |
| CN107482103B CN107482103B (en) | 2019-05-14 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400217A (en) * | 2018-01-22 | 2018-08-14 | 东莞中之光电股份有限公司 | A kind of high efficiency LED chip flip-chip packaged method |
| CN108417699A (en) * | 2018-05-18 | 2018-08-17 | 深圳市德彩光电有限公司 | The plastic package die of LED light source |
| CN108807649A (en) * | 2018-06-13 | 2018-11-13 | 深圳市德彩光电有限公司 | A kind of LED light source plastic package method |
| CN111029451A (en) * | 2018-10-09 | 2020-04-17 | 合肥彩虹蓝光科技有限公司 | LED packaging method |
| CN112186088A (en) * | 2020-09-30 | 2021-01-05 | 深圳Tcl新技术有限公司 | Laminating equipment and LED packaging process |
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| CN101150152A (en) * | 2006-08-09 | 2008-03-26 | 刘胜 | A making method for white LED chip |
| CN103050609A (en) * | 2012-07-17 | 2013-04-17 | 上海祥羚光电科技发展有限公司 | Preparation method of white chip for LED (Light Emitting Diode) |
| CN105280781A (en) * | 2015-10-30 | 2016-01-27 | 晶科电子（广州）有限公司 | Flip white-light LED device and manufacturing method thereof |
| CN106531870A (en) * | 2015-09-11 | 2017-03-22 | 晶元光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN106531867A (en) * | 2016-12-21 | 2017-03-22 | 福建昌达光电有限公司 | Vertical structured chip having multiple color blocks independently emitting light and manufacturing method thereof |
-
2017
- 2017-08-18 CN CN201710712974.6A patent/CN107482103B/en active Active
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|---|---|---|---|---|
| CN101150152A (en) * | 2006-08-09 | 2008-03-26 | 刘胜 | A making method for white LED chip |
| CN103050609A (en) * | 2012-07-17 | 2013-04-17 | 上海祥羚光电科技发展有限公司 | Preparation method of white chip for LED (Light Emitting Diode) |
| CN106531870A (en) * | 2015-09-11 | 2017-03-22 | 晶元光电股份有限公司 | Light emitting device and method for manufacturing the same |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400217A (en) * | 2018-01-22 | 2018-08-14 | 东莞中之光电股份有限公司 | A kind of high efficiency LED chip flip-chip packaged method |
| CN108417699A (en) * | 2018-05-18 | 2018-08-17 | 深圳市德彩光电有限公司 | The plastic package die of LED light source |
| CN108807649A (en) * | 2018-06-13 | 2018-11-13 | 深圳市德彩光电有限公司 | A kind of LED light source plastic package method |
| CN111029451A (en) * | 2018-10-09 | 2020-04-17 | 合肥彩虹蓝光科技有限公司 | LED packaging method |
| CN112186088A (en) * | 2020-09-30 | 2021-01-05 | 深圳Tcl新技术有限公司 | Laminating equipment and LED packaging process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107482103B (en) | 2019-05-14 |
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