CN1074574C - Metal base composite electric packaging heat sink material and its preparing method - Google Patents
Metal base composite electric packaging heat sink material and its preparing methodInfo
- Publication number
- CN1074574C CN1074574C CN98117773A CN98117773A CN1074574C CN 1074574 C CN1074574 C CN 1074574C CN 98117773 A CN98117773 A CN 98117773A CN 98117773 A CN98117773 A CN 98117773A CN 1074574 C CN1074574 C CN 1074574C
- Authority
- CN
- China
- Prior art keywords
- metal base
- sic
- heat sink
- electric packaging
- sic particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 47
- 239000000463 material Substances 0.000 title claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 title claims abstract description 17
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 38
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 12
- 238000003825 pressing Methods 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 239000011159 matrix material Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000009826 distribution Methods 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract description 3
- 238000001513 hot isostatic pressing Methods 0.000 abstract 2
- 239000005022 packaging material Substances 0.000 abstract 2
- 238000005520 cutting process Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 238000006722 reduction reaction Methods 0.000 abstract 1
- 238000005728 strengthening Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Powder Metallurgy (AREA)
Abstract
The present invention relates to a metal base composite electric packaging heat sinking material and a preparing method thereof, which belongs to the technical field of electric packaging materials and the preparation of the electric packaging materials. The material is composed of a metal base body and strengthening substance SiC particles distributed in the metal base body. The material is characterized in that the metal base body is Cu; the volume percentage content or the particle size of the SiC particles is distributed in a multilayer gradient mode. The preparing method orderly comprises powder reduction, mixing, drying, blank pressing, wrapping, vacuum pumping for sealing welding, hot isostatic pressing and cutting for molding. The preparing method is characterized in that after the hot isostatic pressing is carried out, a hot treatment working procedure can also be added. The present invention can simultaneously and better satisfy the requirements of high thermal conductivity and low expansion for the material.
Description
A kind of metal base composite electric packaging heat sink material and preparation method thereof belongs to microelectronic component electricity encapsulating material and manufacturing technology field thereof.
The basic trend of current whole electronic device is a high density, multi-functional, at a high speed and high power.The increase of integrated level increases the energy on the chip rapidly, and the energy that produces on each chip reaches more than the 10W.Therefore how in time to dispel the heat, circuit is worked under normal temperature becomes a major issue.The simplest method is that chip is installed on the ceramic substrate material of high heat conductance.But the used for electronic device ceramic material often needs to combine with heat sink metal material, forms sub-assembly.The metal material of this moment when should keep high thermal conductivity, also requires the thermal coefficient of expansion of thermal coefficient of expansion and ceramic material close, prevents that sub-assembly cracks or fatigue rupture under thermal stress.(work such as T.W. Ke Laiyin in " metal-base composites introduction " book that metallurgical industry publishing house published in 1996, surplus Yongning, room will are just translated, the 440th page) proposition a kind of novel metal based composites: SiC (particle)/Al encapsulating material, by selecting rational reinforce, metallic matrix and control volumn concentration separately, thereby can obtain the performance of high heat conduction, low bulk.But this material exists following problem: the one, and the high thermal conductance of material, the performance of low bulk is difficult to get both, this is because desire obtains low bulk, the SiC of high heat conduction (particle)/Al composite material, the most basic thinking is the volume content of control SiC, but owing to variation with SiC content, the thermal conductivity of composite material, thermal coefficient of expansion is same direction to be changed (as the increase with SiC content, the thermal conductivity of composite material, thermal coefficient of expansion all decreases), just there is a contradiction in this, reduce the content that thermal coefficient of expansion need improve SiC, and this certainly will reduce its thermal conductivity, and the two can not reach optimum value simultaneously.The 2nd, the plating of Al matrix is bad.
The object of the present invention is to provide a kind of plating performance good, and can take into account thermal conductivity, thermal coefficient of expansion two aspect performances simultaneously, thereby be applicable to the metal base composite electric packaging heat sink material of microelectronic component electricity encapsulation field better, and a kind of this preparation methods is provided.
For achieving the above object, metal base composite electric packaging heat sink material of the present invention, constitute by metallic matrix and the reinforce SiC particle that is distributed in the metallic matrix, it is characterized in that, described metallic matrix is Cu, and the volumn concentration of described reinforce SiC particle or particle size are multi-gradient and distribute, and wherein the volumn concentration of Cu is 40%-60%, the volumn concentration of SiC particle is 60%-40%, and the SiC particle size is 5 μ m-20 μ m.After adopting above technical scheme, the present invention is by the volumn concentration or the particle size of reinforce SiC particle in the control composite material, make it to be layered gradient and distribute, on the one hand, can make material along gradient direction have high thermal conductivity, to satisfy requirement to the material high thermal conductivity; On the other hand, material each several part thermal coefficient of expansion also changes in gradient, must there be the thermal coefficient of expansion of a side (side that SiC content height or particle size are big) lower, this side is combined with the ceramic base material of electricity encapsulation, thereby can satisfy demand the material low thermal coefficient of expansion.Like this, just can take into account thermal conductivity and thermal coefficient of expansion two aspect performances simultaneously, satisfy demand to greatest extent simultaneously material high thermal conductivity and low thermal coefficient of expansion two aspects.In addition, select Cu to make metallic matrix, can utilize its good plating and thermal conductivity, the welding performance between raising composite material and base material and the heat-sinking capability of composite material.
The volumn concentration of reinforce SiC particle of the present invention is three layers of Gradient distribution, and the volumn concentration of SiC particle is followed successively by in each layer: 60%, 50%, 40%.The particle size of described reinforce SiC particle is three layers of Gradient distribution, and the SiC particle size is followed successively by 5 μ m in each layer, 10 μ m, 20 μ m.
The preparation method of metal base composite electric packaging heat sink material of the present invention, comprise successively and join powder, powder reduction, mixing, oven dry, pressed compact, jacket, vacuumize soldering and sealing, high temperature insostatic pressing (HIP), excision forming operation, it is characterized in that: between high temperature insostatic pressing (HIP) and excision forming operation, also increase by a heat treatment step.Purpose is to eliminate the residual stress of composite inner, improves the dimensional stability of material, and by Technology for Heating Processing, reduces the thermal coefficient of expansion of composite material.
Among the preparation method of the above-mentioned metal base composite electric packaging heat sink material of the present invention, described heat treatment step is: 300～700 ℃ of insulations 1 hour, be cooled to 50 ℃ then in 6 hours.
Evidence: material of the present invention can satisfy the demand to the high thermal conductance of material, low bulk to greatest extent simultaneously, and described method can reduce the material coefficient of thermal expansion coefficient greatly when effectively eliminating the residual stress of composite inner.
Below in conjunction with drawings and Examples the present invention is described in further details.
Fig. 1: metal base composite electric packaging heat sink material layer structure schematic diagram of the present invention;
Fig. 2: preparation method's flow chart of the present invention.
Embodiment: 1. selecting Cu is metallic matrix, with reinforce SiC particle volumn concentration difference in different layers, form gradient composites, wherein the SiC particle size is 20 μ m, the number of plies is chosen as three layers of a, b, c, threeply degree uniform thickness (its structural representation is as shown in Figure 1), the volumn concentration of Cu, SiC is respectively in three layers:
A layer: 40%Cu, 60%SiC
B layer: 50%Cu, 50%SiC
C layer: 60%Cu, 40%SiC
The preparation method of present embodiment carries out as shown in Figure 2 successively according to the following steps:.
(1). by composition proportion and the SiC particle size of each layer Cu that designs and SiC, be equipped with Cu powder (140 order) and SiC powder respectively.
(2). the Cu powder is used hydrogen reducing in molybdenum wire furnace, 400 ℃ of reduction temperatures, 2 hours recovery times.
(3). Cu powder and SiC powder are placed in the mixing tank in proportion, add an amount of alcohol and mix on the particle sphere grinding machine, make it even, incorporation time is 6 hours.
(4). the powder that mixes is put into baking oven dried 2 hours down at 80 ℃.
(5). the powder of the oven dry back of sieving is pressed into the blank of Ф 18 * 10mm on four-column hydraulic press, and in the jacket of packing into, vacuumize soldering and sealing after, carry out high temperature insostatic pressing (HIP).
(6) blank that obtains behind the high temperature insostatic pressing (HIP) is heat-treated, concrete technology is: be incubated 1 hour down at 700 ℃, be cooled to 50 ℃ then in 6 hours.
(7) remove jacket, on demand excision forming.2. selecting Cu is metallic matrix, with reinforce SiC particle volumn concentration difference in different layers, forms gradient composites, wherein the SiC particle size is 5 μ m, the number of plies is chosen as three layers of a, b, c, threeply degree uniform thickness, and the volumn concentration of Cu, SiC is respectively in three layers:
A layer: 40%Cu, 60%SiC
B layer: 50%Cu, 50%SiC
C layer: 60%Cu, 40%SiC
Its preparation process, except that the heat treatment holding temperature is 300 ℃, all the other steps are with embodiment 1.3. selecting Cu is metallic matrix, with reinforce SiC particle particle size difference in different layers, forms gradient composites.Wherein, the number of plies is chosen as three layers of a, b, c, threeply degree uniform thickness, and the SiC volumn concentration is 40% in three layers, and the SiC particle size is respectively:
A layer: 5 μ m
B layer: 10 μ m
C layer: 20 μ m
Its preparation process, except that the heat treatment holding temperature is 500 ℃, all the other steps are with embodiment 1.
Respectively the gradient composites of the various embodiments described above gained is carried out thermal coefficient of expansion and thermal conductivity test below, wherein: thermal coefficient of expansion adopts the FTM-4 type of Japanese Fuji company automatically to be out of shape the test of record determinator, and specimen size is Ф 3 * 10mm; Thermal conductivity is measured by GB GB5598-85 method, and specimen size is Ф 15 * 15mm, and probe temperature is 50 ± 1 ℃.
Above testing experiment the results are shown in Table shown in 1, and wherein, α is the thermal coefficient of expansion of a layer in the composite material (thermal coefficient of expansion lowermost layer), and λ is the thermal conductivity of composite material along the direction of arrow shown in Figure 1.
Table 1: the physical property of various embodiments of the present invention gradient composites
| The embodiment sequence number | α (×10 -6/℃) | λ (W/m.k) |
| 1 | 10.101 | 148.8 |
| 2 | 8.765 | 148.2 |
| 3 | 10.824 | 101.9 |
Be convenient contrast, adopt the individual layer composite material (matrix is Cu) that becomes different SiC volumn concentrations with the same prepared of the foregoing description, and carry out performance test (method of testing is the same), it the results are shown in Table 2, wherein, α be composite material thermal coefficient of expansion, λ is the thermal conductivity of composite material.
Table 2: the physical property of different SiC volumn concentration individual layer composite materials
(SiC particle size: 20 μ m)
| SiC (％) | α (×10 -6/℃) | λ (W/m.k) |
| 39.5～42.8 | 15.6-17.0 | 84.7-172.0 |
| 47.2～52.9 | 14.9-16.1 | 36.1-38.5 |
| 58.43～61.5 | 12.0-12.2 | 39.4-45.4 |
Test result as seen in contrast table 1, the table 2, when adopting common individual layer composite material, increase with the SiC volumn concentration, the thermal coefficient of expansion and the thermal conductivity of composite material all reduce gradually, make material satisfy the use needs of low bulk, high thermal conductance simultaneously, can only take the way of compromising, so just must sacrifice performance in a certain respect, can not make the performance of two aspects reach optimum value simultaneously; Corresponding with it, adopt gradient composites of the present invention after, on the one hand, can guarantee that composite material has higher heat conductivity along a certain gradient direction (direction of arrow shown in Figure 1, heat dissipation direction during promptly actual the use); On the other hand, can also guarantee a certain side layer (a layer among Fig. 1 of composite material, the one deck that combines with the ceramic base material of electricity encapsulation during use) has lower thermal coefficient of expansion, so just solved the problem that thermal coefficient of expansion and thermal conductivity can not be taken into account when using common individual layer composite material well.In addition, result of the test proves, adopts the Cu with good plating to make metallic matrix, can effectively improve the welding performance of composite material and base material and the heat-sinking capability of composite material.
Test shows that preparation method of the present invention when effectively eliminating the residual stress of composite inner, can reduce the material coefficient of thermal expansion coefficient significantly after increasing the aforementioned hot treatment process.Be the checking this point, thermal coefficient of expansion before and after respectively above-mentioned individual layer composite material being heat-treated in preparation process is tested (700 ℃ of heat treatment holding temperatures), and it the results are shown in Table 3, wherein, α is the thermal coefficient of expansion before the heat treatment, and α ' is the thermal coefficient of expansion after the heat treatment.
Table 3: heat treatment is to the influence of material thermal expansion coefficient
| SiC (％) | α (×10 -6/℃) | α′ (×10 -6/℃) |
| 39.5～42.8 | 15.6-17.0 | 8.8-10.1 |
| 47.2～52.9 | 14.9-16.1 | 10.9-11.3 |
| 58.43～61.5 | 12.0-12.2 | 10.8-12.8 |
As seen, after heat treatment, the thermal coefficient of expansion of composite material all significantly decreases from table 3, and this shows that Technology for Heating Processing has significant effect to reducing the material coefficient of thermal expansion coefficient really.
In sum, the present invention has reached Expected Results, has realized purpose of the present invention.
Except that the foregoing description number of plies is designed to three layers, the described number of plies of composite electric packaging heat sink material of the present invention also can be designed to the random layer of two-layer above (containing two-layer), and this decides by requiring.In addition, each layer thickness both can be designed to uniform thickness (as the various embodiments described above of the present invention), also can be designed to not uniform thickness, to satisfy the needs under the different condition.Moreover, in described preparation technology's jacket operation, can place identical blank in the jacket, also can sinter an integral body behind the high temperature insostatic pressing (HIP) into by the different blank of required arrangement of gradients, more than these do not depart from the scope of the present invention.
Claims (4)
1. metal base composite electric packaging heat sink material, constitute by metallic matrix and the reinforce SiC particle that is distributed in the metallic matrix, it is characterized in that: described metallic matrix is Cu, the volumn concentration of described reinforce SiC particle or particle size are multi-gradient and distribute, wherein the volumn concentration of Cu is 40%-60%, the volumn concentration of SiC particle is 60%-40%, and the SiC particle size is 5 μ m-20 μ m.
2. metal base composite electric packaging heat sink material according to claim 1 is characterized in that: the volumn concentration of described reinforce SiC particle is three layers of Gradient distribution, and the volumn concentration of SiC particle is followed successively by in each layer: 60%, 50%, 40%.
3. metal base composite electric packaging heat sink material according to claim 1 is characterized in that: the particle size of described reinforce SiC particle is three layers of Gradient distribution, and the SiC particle size is followed successively by 5 μ m in each layer, 10 μ m, 20 μ m.
4. the preparation method of a metal base composite electric packaging heat sink material according to claim 1, comprise successively and join powder, powder reduction, mixing, oven dry, pressed compact, jacket, vacuumize soldering and sealing, high temperature insostatic pressing (HIP), excision forming operation, it is characterized in that: between high temperature insostatic pressing (HIP) and excision forming operation, also increase by a heat treatment step, its operation is: be incubated 1 hour down at 300～700 ℃, be cooled to 50 ℃ then in 6 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98117773A CN1074574C (en) | 1998-09-18 | 1998-09-18 | Metal base composite electric packaging heat sink material and its preparing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98117773A CN1074574C (en) | 1998-09-18 | 1998-09-18 | Metal base composite electric packaging heat sink material and its preparing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1212438A CN1212438A (en) | 1999-03-31 |
| CN1074574C true CN1074574C (en) | 2001-11-07 |
Family
ID=5225697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98117773A Expired - Fee Related CN1074574C (en) | 1998-09-18 | 1998-09-18 | Metal base composite electric packaging heat sink material and its preparing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1074574C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101306591B (en) * | 2008-06-30 | 2011-12-14 | 河北理工大学 | Copper surface functional material and preparation method |
| CN104046823A (en) * | 2014-06-13 | 2014-09-17 | 上海和辉光电有限公司 | Graded metal-ceramic composite and preparation method thereof |
| CN104493169A (en) * | 2014-12-26 | 2015-04-08 | 中国科学院长春光学精密机械与物理研究所 | Ceramic particle local reinforced metal heat sink and preparing method thereof |
| CN105369052A (en) * | 2015-11-10 | 2016-03-02 | 东华大学 | SiC-Cu electric contact material and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100021A (en) * | 1985-04-01 | 1986-01-10 | 天津大学 | Deposited au-sic composite coat |
| US5396403A (en) * | 1993-07-06 | 1995-03-07 | Hewlett-Packard Company | Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate |
-
1998
- 1998-09-18 CN CN98117773A patent/CN1074574C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100021A (en) * | 1985-04-01 | 1986-01-10 | 天津大学 | Deposited au-sic composite coat |
| US5396403A (en) * | 1993-07-06 | 1995-03-07 | Hewlett-Packard Company | Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1212438A (en) | 1999-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102407335B (en) | High heat conductivity LED packaging material and preparation method thereof | |
| EP3598485B1 (en) | Bonded substrate and method for manufacturing bonded substrate | |
| CN109690760B (en) | Heat sink and method for manufacturing the same | |
| EP1337497B1 (en) | A heat conductive material | |
| KR101679104B1 (en) | Heat sink for electronic device, and process for production thereof | |
| JP2011168472A (en) | Alumina sintered body, method for producing the same and semiconductor manufacturing apparatus member | |
| US20090224399A1 (en) | Silicon nitride substrate, method of manufacturing the same, and silicon nitride circuit board and semiconductor module using the same | |
| CN111069611B (en) | Preparation method of graphite-graphene-metal composite material | |
| CN108774699A (en) | Aluminium silicon/aluminium gold hard rock gradient composites and preparation method thereof | |
| CN1074574C (en) | Metal base composite electric packaging heat sink material and its preparing method | |
| CN111742073A (en) | Composite material and method for producing composite material | |
| US20230303461A1 (en) | Molded article and method for producing same | |
| JPWO2020027077A1 (en) | Silicon nitride sintered body, silicon nitride substrate, and silicon nitride circuit board | |
| CN113235020A (en) | Gradient diamond/copper composite material and preparation method thereof | |
| CN1489965A (en) | Ceramic heating apparatus and producing method thereof | |
| Chen et al. | Functionally graded W-Cu materials prepared from Cu-coated W powders by microwave sintering | |
| Fan et al. | Pressure infiltrated Cu/diamond composites for LED applications | |
| JP4615312B2 (en) | COMPOSITE MATERIAL, ITS MANUFACTURING METHOD, AND MEMBER USING THE SAME | |
| CN106119583B (en) | A kind of preparation method of pressureless sintering titanium/aluminum oxide gradient composites | |
| JP2000297301A (en) | Silicon carbide based composite material, its powder, and their manufacture | |
| JP4305986B2 (en) | Method for producing silicon carbide composite material | |
| EP3854767A1 (en) | Ceramic sintered body and substrate for semiconductor devices | |
| JPH0633104A (en) | Distortionless alloy body having graded composition and production thereof | |
| CN111804919B (en) | High-thermal-conductivity graphite-metal composite material and preparation method thereof | |
| NL2032823B1 (en) | Method for preparing high-density and high-tc diamond/copper composites by sps |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |