CN107452850A - 接合用导线与半导体封装结构 - Google Patents

接合用导线与半导体封装结构 Download PDF

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CN107452850A
CN107452850A CN201611000249.8A CN201611000249A CN107452850A CN 107452850 A CN107452850 A CN 107452850A CN 201611000249 A CN201611000249 A CN 201611000249A CN 107452850 A CN107452850 A CN 107452850A
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reflecting layer
wire
gold
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陈志慧
陈建良
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Lextar Electronics Corp
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Abstract

一种接合用导线与半导体封装结构。接合用导线用于半导体封装结构中。接合用导线包含芯线与反射层。芯线的材质为金。反射层包覆于芯线的表面，其中反射层的材质为金合金。通过设置反射层包覆于芯线的表面，并让反射层的材质为金混合其他反射率较高的金属而形成的金合金，于是接合用导线将会具有较高的反射率，因而得以提升发光半导体封装结构的发光亮度。在此同时，因为芯线的材质为金，而反射层的材质为金合金，因此接合用导线的材质为接近纯金，发光二极管封装结构将可以有最佳的产品可靠度及生产良率。

Description

接合用导线与半导体封装结构
技术领域
本发明是有关于一种接合用导线与一种半导体封装结构。
背景技术
发光二极管由于具有高亮度、反应速度快、体积小、污染低、高可靠度、适合量产等优点，因此发光二极管在照明领域或是消费性电子产品的开发应用亦将越来越多，目前已将发光二极管广泛地应用在大型看板、交通号志灯、手机、扫描器、传真机的光源以及照明装置等。基于上述可知，发光二极管的发光效率以及亮度需求将会越来越受到重视，是故高亮度发光二极管的研究开发将是固态照明应用上的重要课题。
发光二极管已经在某些应用领域中取代荧光灯与白炽灯，而作为例如需求高速反应的扫描器灯源、投影装置的灯源、液晶显示器的背光源或前光源，汽车仪表板上的照明灯源，交通号志的灯源以及一般照明装置的灯源等等。相较于传统灯管，发光二极管具有例如体积较小、使用寿命较长、驱动电压/电流较低、结构强度较高、无汞污染以及高发光效率(节能)等显著优势。
为了进一步改善照明装置的各项特性，相关领域莫不费尽心思开发。如何能较佳地应用发光二极管于照明装置，实属当前重要研发课题之一，亦成为当前相关领域亟需改进的目标。
发明内容
本发明的一技术态样是在提供一种接合用导线，使发光二极管封装结构在具有最佳的产品可靠度及生产良率时，提升发光二极管封装结构的发光亮度。
根据本发明一实施方式，一种接合用导线，用于半导体封装结构中。接合用导线包含芯线与反射层。芯线的材质为金。反射层包覆于芯线的表面，其中反射层的材质为金合金。
根据本发明另一实施方式，一种半导体封装结构包含载体、半导体元件、至少一电极以及至少一接合用导线。发光二极管晶片设置于载体上。电极设置于载体上。接合用导线用以电性连接半导体元件与电极，其中接合用导线包含芯线与反射层。芯线的材质为金。反射层包覆于芯线的表面，其中反射层的材质为金合金。
于本发明的一或多个实施方式中，反射层的厚度为约至约
于本发明的一或多个实施方式中，反射层中与金构成合金的金属包含银、铝及/或钯。
于本发明的一或多个实施方式中，反射层的材质为金银合金。
于本发明的一或多个实施方式中，银占反射层的重量百分比为约20％至约50％。
本发明上述实施方式通过设置反射层包覆于芯线的表面，并让反射层的材质为金混合其他反射率较高的金属而形成的金合金，于是接合用导线将会具有较高的反射率，因而得以提升发光二极管封装结构(即半导体封装结构)的发光亮度。在此同时，因为芯线的材质为金，而反射层的材质为金合金，因此接合用导线的材质为接近纯金，发光二极管封装结构将可以有最佳的产品可靠度及生产良率。
附图说明
图1绘示依照本发明一实施方式的半导体封装结构的上视示意图；
图2绘示依照本发明一实施方式的半导体封装结构的侧视示意图；
图3绘示依照本发明一实施方式的接合用导线的剖面示意图；
图4绘示图1的局部M的放大图；
图5绘示依照本发明另一实施方式的半导体封装结构的侧视示意图。
具体实施方式
以下将以附图揭露本发明的多个实施方式，为明确说明起见，许多实务上的细节将在以下叙述中一并说明。然而，应了解到，这些实务上的细节不应用以限制本发明。也就是说，在本发明部分实施方式中，这些实务上的细节是非必要的。此外，为简化附图起见，一些已知惯用的结构与元件在附图中将以简单示意的方式绘示。
图1绘示依照本发明一实施方式的半导体封装结构100的上视示意图。图2绘示依照本发明一实施方式的半导体封装结构100的侧视示意图。本发明不同实施方式提供一种半导体封装结构100。具体而言，半导体封装结构100可为发光二极管封装结构。本发明不同实施方式亦提供一种接合用导线，用于半导体封装结构100中。
如图1与图2所绘示，一种半导体封装结构100包含载体110、半导体元件120、第一电极131a、第二电极131b以及两条接合用导线141a、141b。半导体元件120设置于载体110上。第一电极131a设置于载体110上。第二电极131b设置于载体110上。两条接合用导线141a、141b分别用以电性连接半导体元件120与第一电极131a和电性连接半导体元件120与第二电极131b。
图3绘示依照本发明一实施方式的接合用导线141a的剖面示意图。如图3所绘示，接合用导线141a包含芯线143与反射层145。芯线143的材质为金。具体而言，金占芯线143的重量百分比为大于99％。反射层145包覆于芯线143的表面，其中反射层145的材质为金合金。另外，接合用导线141a的剖面结构基本上与接合用导线141b的剖面结构相同。
如图1所绘示，在半导体封装结构100中，接合用导线141a、141b占半导体封装结构发光面101约1～3％的面积，因此接合用导线141a、141b的可见光反射率将会直接影响半导体封装结构100的发光亮度。
在此同时，接合用导线141a、141b的材质对于焊线制程可靠度影响甚大，且焊线制程的参数调整、焊针的选择及焊线形成气体(氢气与氮气的混合气体)的比例皆需要依照接合用导线141a、141b的材质进行调整搭配。在实际生产上，接合用导线141a、141b的材质为接近纯金时，将可以有最佳的产品可靠度及生产良率。
通过设置反射层145包覆于芯线143的表面，并让反射层145的材质为金混合其他反射率较高的金属而形成的金合金，于是接合用导线141a、141b将会具有较高的反射率，因而得以提升半导体封装结构100的发光亮度。
在此同时，因为芯线143的材质为金，而反射层145的材质为金合金，因此接合用导线141a、141b的材质为接近纯金，于是半导体封装结构100将可以有最佳的产品可靠度及生产良率。
具体而言，反射层145为通过电镀、化学镀、蒸镀或高温扩散等方式形成于芯线143的表面。应了解到，以上所举的反射层145的形成方式仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择反射层145的形成方式。
需要注意的是，芯线143的材质为金，反射层145的材质为金合金，因为芯线143与反射层145的材质皆含有金，所以反射层145可以轻易地形成于芯线143的表面上，同时反射层145可以稳定地固定于芯线143的表面上。
具体而言，半导体封装结构100可为塑胶引脚晶片载体封装(Plastic LeadedChip Carrier，PLCC)，但并不限于此。在其他实施方式中，半导体封装结构100可为晶粒-电路板接合封装(Chip On Board，COB)、发光二极管发射器封装(Light-emitting DiodeEmitter)或晶片尺寸封装(Chip Size Package)。应了解到，以上所举的半导体封装结构100的具体实施方式仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择半导体封装结构100的具体实施方式。
具体而言，半导体元件120为二极管，更具体地说，半导体元件120为发光二极管，但并不限于此。在其他实施方式中，半导体元件120可能不只一个，且半导体封装结构100包含与每个半导体元件120相对应的接合用导线，其中一个半导体元件120为发光二极管，其他的半导体元件120可为发光二极管或齐纳二极管。应了解到，以上所举的半导体元件120的具体实施方式仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择半导体元件120的具体实施方式。
更进一步来说，在本实施方式中，半导体元件120为水平式发光二极管。应了解到，以上所举的半导体元件120的具体实施方式仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择半导体元件120的具体实施方式。
具体而言，反射层145中与金构成合金的金属包含银、铝及/或钯。应了解到，以上所举的反射层145的材质仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择反射层145的材质。
于一实施方式中，反射层145的材质为金银合金。以金、银的反射率来看，在可见光的波长范围(光波长为约380纳米至约780纳米)，纯银具有约97％的反射率，而纯金则具有约65％的反射率。因此，在反射层145的材质为金银合金的情况下，相较于反射层145的材质为纯金的情况，接合用导线141a、141b的反射率将可有效提升。
需要注意的是，因为银可能会硫化或氧化而变成黑色，因而导致反射率下降，因此银占反射层145的重量百分比不能太高，而在妥善控制银占反射层145的重量百分比后，反射层145将可以避免因为硫化或氧化而使其反射率下降的情况。
具体而言，银占反射层145的重量百分比可为约15％至约55％、约15％至约50％、约15％至约45％、约15％至约40％、约15％至约35％、约15％至约30％、约20％至约55％、约20％至约50％、约20％至约45％、约20％至约40％、约20％至约35％、约20％至约30％、约25％至约55％、约25％至约50％、约25％至约45％、约25％至约40％、约25％至约35％或约25％至约30％。应了解到，以上所举的反射层145的具体实施方式仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择反射层145的具体实施方式。
在其他实施方式中，考量到接合用导线141a、141b的反射率、焊线制程可靠度、整体制造成本等因素，本发明所属技术领域中具有通常知识者将可以依照实际需要，弹性选择反射层145中与金构成合金的金属种类，且弹性调整反射层145中各个金属的重量比例。
具体而言，反射层145的材质可为金铝合金、金钯合金、金银铝合金、金银钯合金、金铝钯合金或金银铝钯合金。
具体而言，接合用导线141a、141b的线径可为约18微米至约35微米、18微米至约30微米、18微米至约25微米、20微米至约35微米、20微米至约30微米、20微米至约25微米、22微米至约35微米、22微米至约30微米或22微米至约25微米。应了解到，以上所举的接合用导线141a、141b的线径仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择接合用导线141a、141b的线径。
具体而言，反射层145的厚度为约至约至约至约至约至约至约至约 至约至约至约至约至约 至约至约至约至约至约或至约应了解到，以上所举的反射层145的厚度仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择反射层145的厚度。
通过调整反射层145的厚度与反射层145中各个金属的重量比例，将能有效避免反射层145因为硫化或氧化而使其反射率下降的情况。
图4绘示图1的局部M的放大图。如图1与图4所绘示，半导体封装结构100更包含焊垫151与焊球161。焊垫151设置于半导体元件120上。焊垫151的材质为金。具体而言，金占焊垫151的重量百分比为大于99％。焊球161设置于接合用导线141a与焊垫151之间，用以将接合用导线141a连着固定于焊垫151上。接合用导线141a与焊球161的连接面142在焊垫151上的正投影与焊球161在焊垫151上的正投影约为两个同心圆。
具体而言，焊球161为通过焊线机使接合用导线141a放电烧球而形成，因此焊球161的材质与接合用导线141a的材质将会大致相同，即焊球161的材质约为纯金，而焊垫151的材质亦为纯金，因此焊球161将可以轻易且妥善地将接合用导线141a连着固定于焊垫151上。
在通过焊线机使接合用导线141a放电烧球而形成焊球161时，妥善调整调整反射层145的厚度与反射层145中各个金属的重量比例，将可使焊球161妥善地形成于接合用导线141a的尾端，而在焊球161与接合用导线141a固定于焊垫151后，接合用导线141a与焊球161的连接面142在焊垫151上的正投影与焊球161在焊垫151上的正投影会约为两个同心圆。反的，若是焊球161没有妥善地形成于接合用导线141a的尾端而产生烧球歪斜的情况，在焊球161与接合用导线141a固定于焊垫151后，焊球161在焊垫151上的正投影可能不会是圆形，且接合用导线141a与焊球161的连接面142在焊垫151上的正投影中心与焊球161在焊垫151上的正投影中心将不会约位于同一点。
若是焊球161没有妥善地形成于接合用导线141a的尾端，将可能会降低焊线制程可靠度，因而影响半导体封装结构100的产品可靠度及生产良率。因此，妥善调整反射层145的厚度与反射层145中各个金属的重量比例，因而使焊球161妥善地形成于接合用导线141a的尾端，将能确保半导体封装结构100的产品可靠度及生产良率。
图5绘示依照本发明另一实施方式的半导体封装结构100的侧视示意图。本实施方式的半导体封装结构100与前述的半导体封装结构100大致相同，主要差异在于，在本实施方式中，半导体元件120为垂直式发光二极管。具体而言，如图5所绘示，半导体封装结构100包含载体110、半导体元件120、第一电极131a、第二电极131b以及接合用导线141c。第一电极131a设置于载体110上。第二电极131b设置于载体110上。半导体元件120设置于载体110上并电性连接第二电极131b。接合用导线141c用以电性连接半导体元件120与第一电极131a。
本发明上述实施方式通过设置反射层145包覆于芯线143的表面，并让反射层145的材质为金混合其他反射率较高的金属而形成的金合金，于是接合用导线141a、141b、141c将会具有较高的反射率，因而得以提升半导体封装结构100的发光亮度。在此同时，因为芯线143的材质为金，而反射层145的材质为金合金，因此接合用导线141a、141b、141c的材质为接近纯金，半导体封装结构100将可以有最佳的产品可靠度及生产良率。
虽然本发明已以实施方式揭露如上，然其并非用以限定本发明，任何熟悉此技艺者，在不脱离本发明的精神和范围内，当可作各种的更动与润饰，因此本发明的保护范围当视所附的权利要求书所界定的范围为准。

Claims (10)

1.一种接合用导线，用于一半导体封装结构中，其特征在于，该接合用导线包含：
一芯线，其中该芯线的材质为金；以及
一反射层，包覆于该芯线的表面，其中该反射层的材质为金合金。
2.根据权利要求1所述的接合用导线，其特征在于，该反射层的厚度为至
3.根据权利要求1所述的接合用导线，其特征在于，该反射层中与金构成合金的金属包含银、铝及/或钯。
4.根据权利要求3所述的接合用导线，其特征在于，该反射层的材质为金银合金。
5.根据权利要求4所述的接合用导线，其特征在于，银占该反射层的重量百分比为20％至50％。
6.一种半导体封装结构，其特征在于，包含：
一载体；
一半导体元件，设置于该载体上；
至少一电极，设置于该载体上；以及
至少一接合用导线，用以电性连接该半导体元件与该电极，其中该接合用导线包含：
一芯线，其中该芯线的材质为金；以及
一反射层，包覆于该芯线的表面，其中该反射层的材质为金合金。
7.根据权利要求6所述的半导体封装结构，其特征在于，该反射层的厚度为至
8.根据权利要求6所述的半导体封装结构，其特征在于，该反射层中与金构成合金的金属包含银、铝及/或钯。
9.根据权利要求6所述的半导体封装结构，其特征在于，该反射层的材质为金银合金。
10.根据权利要求9所述的半导体封装结构，其特征在于，银占该反射层的重量百分比为20％至50％。
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