CN107437574A - 一种n型单面电池的制备方法 - Google Patents
一种n型单面电池的制备方法 Download PDFInfo
- Publication number
- CN107437574A CN107437574A CN201710699868.9A CN201710699868A CN107437574A CN 107437574 A CN107437574 A CN 107437574A CN 201710699868 A CN201710699868 A CN 201710699868A CN 107437574 A CN107437574 A CN 107437574A
- Authority
- CN
- China
- Prior art keywords
- type
- solution
- pocl
- preparation
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 238000009792 diffusion process Methods 0.000 claims abstract description 40
- 229910019213 POCl3 Inorganic materials 0.000 claims abstract description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 20
- 239000011574 phosphorus Substances 0.000 claims abstract description 20
- 210000002268 wool Anatomy 0.000 claims abstract description 19
- 235000008216 herbs Nutrition 0.000 claims abstract description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 238000001039 wet etching Methods 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims abstract description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 36
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 16
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 10
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000006117 anti-reflective coating Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 21
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 230000009466 transformation Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 58
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 20
- 239000000203 mixture Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Substances BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910015845 BBr3 Inorganic materials 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Cell Separators (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
Description
转换效率(%) | 硅片成本 | |
实施例五 | 20.3 | 1元/片(8寸) |
对比例一 | 17.2 | 1元/片(8寸) |
对比例二 | 19.4 | 2.5元/片(8寸) |
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710699868.9A CN107437574B (zh) | 2017-08-16 | 2017-08-16 | 一种n型单面电池的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710699868.9A CN107437574B (zh) | 2017-08-16 | 2017-08-16 | 一种n型单面电池的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107437574A true CN107437574A (zh) | 2017-12-05 |
CN107437574B CN107437574B (zh) | 2019-09-24 |
Family
ID=60460441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710699868.9A Active CN107437574B (zh) | 2017-08-16 | 2017-08-16 | 一种n型单面电池的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107437574B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101707226A (zh) * | 2009-07-29 | 2010-05-12 | 湖南红太阳新能源科技有限公司 | 晶体硅太阳能电池的扩散工艺 |
CN102593263A (zh) * | 2012-03-20 | 2012-07-18 | 浙江大学 | N型晶体硅背发射结太阳能电池的制备方法及腐蚀液 |
US20120241767A1 (en) * | 2009-12-16 | 2012-09-27 | Hiroshi Yano | Sic semiconductor element and manufacturing method for same |
CN103066160A (zh) * | 2013-01-15 | 2013-04-24 | 浙江大学 | 一种太阳电池硅片表面生成多孔硅的方法 |
-
2017
- 2017-08-16 CN CN201710699868.9A patent/CN107437574B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101707226A (zh) * | 2009-07-29 | 2010-05-12 | 湖南红太阳新能源科技有限公司 | 晶体硅太阳能电池的扩散工艺 |
US20120241767A1 (en) * | 2009-12-16 | 2012-09-27 | Hiroshi Yano | Sic semiconductor element and manufacturing method for same |
CN102593263A (zh) * | 2012-03-20 | 2012-07-18 | 浙江大学 | N型晶体硅背发射结太阳能电池的制备方法及腐蚀液 |
CN103066160A (zh) * | 2013-01-15 | 2013-04-24 | 浙江大学 | 一种太阳电池硅片表面生成多孔硅的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107437574B (zh) | 2019-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104733555B (zh) | 一种n型双面太阳电池及其制备方法 | |
CN102403399B (zh) | 一膜多用的掩膜后制绒太阳能电池的制备方法及其结构 | |
CN101783374B (zh) | 一种硅太阳能电池的制备方法 | |
CN110620159B (zh) | 一种P-TOPCon光伏太阳能电池结构的制备方法 | |
CN102154711A (zh) | 一种单晶硅清洗液及预清洗工艺 | |
CN109713053A (zh) | 一种mwt太阳能电池的制备方法 | |
CN105826409B (zh) | 一种局部背场n型太阳能电池的制备方法 | |
CN104009118B (zh) | 一种高效n型晶体硅刻槽埋栅电池的制备方法 | |
CN102437238A (zh) | 一种用于晶体硅太阳电池硼掺杂的方法 | |
CN102270702A (zh) | 一种制绒白斑单晶硅片的返工工艺 | |
WO2016054917A1 (zh) | N型双面电池的湿法刻蚀方法 | |
CN102403369A (zh) | 一种用于太阳能电池的钝化介质膜 | |
CN101752460A (zh) | 一种制备隐蔽型发射极硅太阳电池的方法 | |
CN111725359A (zh) | 一种钝化接触太阳能电池的制备方法 | |
CN104157740B (zh) | 一种n型双面太阳能电池的制备方法 | |
CN105655424A (zh) | 全背场扩散n型硅基电池及其制备方法 | |
CN102709389B (zh) | 一种双面背接触太阳能电池的制备方法 | |
CN103151428A (zh) | 一种晶体硅太阳电池选择性发射极的实现方法 | |
CN108538958B (zh) | 一种n型ibc电池及其制备方法 | |
CN105428453A (zh) | 一种叉指型背接触电池的制作方法 | |
CN102176474B (zh) | 一膜多用的掩膜法制备的n型太阳能电池及其制备方法 | |
CN108447944A (zh) | 一种n型pert双面电池制备方法 | |
CN105957921B (zh) | 一种利用印刷技术制备n型硅ibc太阳电池的方法 | |
CN103258728A (zh) | 硅片刻蚀的方法及太阳能电池片的制作方法 | |
CN204497251U (zh) | 一种高效n型双面太阳电池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200608 Address after: 751200 Zhong Ning County, the Ningxia Hui Autonomous Region, Guo Zhuang County, wolfberry market, Qi Fu Business Hotel, room 209 Patentee after: ZHONGNING ZHICAI TECHNOLOGY SERVICE Co.,Ltd. Address before: Our 315200 Zhejiang province Ningbo Zhenhai Economic Development Zone No. 1188 Patentee before: NINGBO SHIHONG QIANXI TRADE Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211213 Address after: No.94 chajiadou, Huannan village, Fengming street, Tongxiang City, Jiaxing City, Zhejiang Province, 314500 Patentee after: ZHEJIANG HUANYI ELECTRONIC TECHNOLOGY CO.,LTD. Address before: 751200 Zhong Ning County, the Ningxia Hui Autonomous Region, Guo Zhuang County, wolfberry market, Qi Fu Business Hotel, room 209 Patentee before: ZHONGNING ZHICAI TECHNOLOGY SERVICE Co.,Ltd. |
|
TR01 | Transfer of patent right |