CN107437519B - 用于处理基板的方法和装置 - Google Patents

用于处理基板的方法和装置 Download PDF

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CN107437519B
CN107437519B CN201710388785.8A CN201710388785A CN107437519B CN 107437519 B CN107437519 B CN 107437519B CN 201710388785 A CN201710388785 A CN 201710388785A CN 107437519 B CN107437519 B CN 107437519B
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方炳善
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Abstract

提供了一种用液体处理基板的方法和装置。该基板处理方法包括：用于在表面改性步骤之前将含有氟化氢(HF)的处理液供应到基板并处理基板的预处理步骤；以及用于将烯烃类化学品供应到基板上以将基板的表面改变为疏水状态的表面改性步骤。作为结果，基板的表面均匀，并且当移除基板时，可以减少颗粒的产生。

Description

用于处理基板的方法和装置
技术领域
本文公开的本发明涉及一种用液体处理基板的方法。
背景技术
为了制造半导体装置或液晶显示器，在基板上执行各种工艺，例如光刻、灰化、蚀刻、离子注入、薄膜沉积和清洁。通过这种基板处理工艺可以在基板上形成图案，并且形成的图案可能被大气或水损坏。为了防止图案的损坏，进行将基板的表面从亲水性改变为疏水性的步骤(以下称为表面改性步骤)。
通常地，在表面改性工艺中，将硅烷基或羟基键合至具有亲水表面的基板上以将表面改性为具有疏水性。这种表面改性步骤应当以第一冲洗步骤、第一替换步骤、表面改性步骤、第二替换步骤、第二冲洗步骤和干燥步骤的顺序来进行。
这需要分别在表面改性步骤之前和之后的冲洗和替换步骤，并且由于重复冲洗步骤和替换步骤，所以需要大量的时间。此外，当用含有硅烷基或羟基的化学品对基板进行表面改性时，基板的表面不均匀，并且当移除它时，产生大量的颗粒。
发明内容
本文描述的本发明构思的实施方式涉及一种能够对基板的表面均匀地进行改性的方法和装置。
本文描述的本发明构思的实施方式涉及一种使在对基板的疏水表面的亲水性改性期间的大量颗粒的产生最小化的方法和装置。
本文描述的本发明构思的实施方式涉及一种用液体处理基板的方法和装置。基板处理方法包括：用于将烯烃类化学品供应到基板上以将基板的表面改变为疏水状态的表面改性步骤。
基板处理方法还包括：用于在表面改性步骤之前将含有氟化氢(HF)的处理液供应到基板并处理基板的预处理步骤。在表面改性步骤中，化学品可与基板的表面发生自由基反应。可以通过用紫外线照射基板来产生自由基反应。
可以通过加热基板来产生自由基反应。
基板的温度可以为200℃以下，且表面改性步骤的处理时间可以在2分钟以内。可以进一步包括：用于在表面改性步骤之后将冲洗液供应到基板并处理基板的冲洗步骤；以及用于在冲洗步骤之后将有机溶剂供应到基板以替换残留在基板上的冲洗液的替换步骤。
基板处理装置包括：用于支撑基板的基板支撑单元和用于将液体供应到基板支撑单元的液体供应单元，其中液体供应单元包括：用于将烯烃类化学品供应到基板上以使基板的表面变为具有疏水性的化学品喷嘴。
液体供应单元还包括：用于排出含有氟化氢(HF)的处理液的预处理喷嘴和用于控制化学品喷嘴和预处理喷嘴的控制器，其中，控制器可以控制化学品喷嘴和预处理喷嘴，以将处理液供应到基板上之后供应化学品。液体供应单元还可以包括：用于加热由基板支撑单元所支撑的基板的加热器。液体供应单元还可以包括：用于将紫外(UV)光照射到由基板支撑单元所支撑的基板上的灯。
根据实施方式，用含有氟化氢(HF)的处理液处理基板，然后用烯烃类化学品将基板的表面改性为具有疏水性，从而进行基板的表面改性工艺。作为结果，基板的表面均匀，并且当移除基板时，可以减少颗粒的产生。
根据实施方式，在基板的表面改性步骤中，加热或照射紫外线，并且可以通过控制基板的温度和处理时间来控制疏水性程度。
附图说明
图1是表示本发明的实施方式的基板处理装置的平面图。
图2是表示图1的基板处理装置的横截面图。
图3是表示使用图2的基板处理装置来处理基板的工艺的流程图。
图4至图7是表示使用图2的液体供应单元来处理基板的工艺的视图。
具体实施方式
将在下文中参考附图更全面地描述各种示例性实施方式，而附图中示出了一些示例性实施方式。然而，本发明可以以不同的形式实施，并且不应被解释为限于本文所阐述的实施方式。相反地，提供这些实施方式以使本公开彻底和完整，并且将向本领域技术人员充分地传达本发明的范围。因此，将附图的特征夸大以强调明确的解释。
在该实施方式中，将描述清洁形成在基板上的疏水膜的工艺作为示例。在下文中，将参照图1至图7详细描述本发明的一个实施例。
图1是表示本发明的实施方式的基板处理装置的俯视图。参考图1，基板处理装置1包括：转位模块10和工艺处理模块20。转位模块10具有载入埠120和传送框架140。使载入埠120、传送框架140和工艺处理模块20顺序地排成一行。以下，将布置载入埠120、传送框架140和工艺处理模块的方向称为第一方向12。将在俯视角中与第一方向12垂直的方向称为第二方向14，并将垂直于包括第一方向12和第二方向14的平面的方向称为第三方向16。
其中容纳基板W的载体18安置在载入埠120上。载入埠120设置成多个数量，并且它们沿着第二方向14排成一行。载入埠120的数量可以根据如工艺效率和工艺处理模块20的占地面积的需求而增加或减少。载体18形成有多个槽(未示出)，用于相对于平表面水平地容纳基板W。正面开口标准箱(FOUP)可以用作载体18。
工艺处理模块20包括缓冲单元220、传送室240和处理室260。传送室240设置成使其长度方向与第一方向12平行。处理室260分别布置在传送室240的两侧。在传送室240的两侧，处理室260相对于传送室240对称地定位。一些处理室260沿传送室240的长度方向放置。此外，一些处理室260以彼此垂直堆叠放置。也就是说，在传送室240的一侧，处理室260可以以A×B阵列布置。在此，A是沿着第一方向12设置的处理室260的数量，B是沿着第三方向16设置的处理室260的数量。当在传送室240的一侧设置四个或六个处理室260时，可以以2×2或3×2阵列布置处理室260。处理室260的数量可以增加或减少。
选择性地，处理室260可以仅设置在传送室240的一侧上。而且，处理室260可以在传送室240的两侧设置成单层。
缓冲单元220布置在传送框架140和传送室240之间。缓冲单元在传送室240和传送框架140之间提供了空间，用于在传送基板W之前使基板W暂时停留。在缓冲单元220的内部(例如内壁)设置有放置基板的槽(未描述)，并且沿着第三方向16设置有多个间隔开的槽(未描述)。面向传送框架140的缓冲单元220的一侧和面向传送室240的缓冲单元220的另一侧是开口的。
传送框架140传送在缓冲单元220与位于载入埠120上的载体18之间的基板W。在传送框架140中，设置有转位轨道142和转位机器人144。转位轨道142设置成使得长度方向平行于第二方向14。转位机器人144安装在转位轨道142上，并且沿着转位轨道142朝第二方向14线性移动。转位机器人144包括基座144a、主体144b和转位臂144c。基座133a沿着导轨142可移动地安装。主体144b联接到基座144a。主体144b沿着第三方向16可移动地设置在基座144a上。此外，主体144b可旋转地设置在基座144a上。转位臂144c联接到主体144b，并且设置成向主体144b前后移动。转位臂144c设置有多个数量，并且它们分别被单独驱动。转位臂144c垂直布置，即沿着第三方向16彼此间隔开。当将基板W从工艺处理模块20传送到载体18时，可以使用一些转位臂144c，并且当将基板W从载体18传送到工艺处理模块200时，可以使用另一些转位臂144c。以这种方式，在转位机器人144搬入或搬出基板W期间，可以防止处理工艺之前来自基板的颗粒粘附到处理工艺之后的基板。
传送室240在处理室260和缓冲单元220之间以及在处理室260之间传送基板W。传送室240中设置有导轨242和主机器人244。导轨242是使得长度方向与第一方向12平行的位置。主机器人244安装在导轨242上，并且在导轨242上沿着第一方向12线性移动。主机器人244包括基座244a、主体244b和主臂244c。基座244a沿着导轨242可移动地安装。主体244b联接到基座244a。主体244b沿着第三方向16可移动地设置在基座244a上。此外，主体244b可旋转地设置在基座244a上。主臂244c联接到主体244b，并且设置成相对于主体244b前后移动。主臂244c设置有多个数量，并且设置成分别被单独驱动。主臂244c垂直布置，即沿着第三方向16彼此间隔开。
在处理室260中，设置有基板处理装置300，对基板W执行清洁工艺。基板处理装置300可以基于清洁工艺的种类而具有不同的结构。设置在每个处理室240中的基板处理装置300可以具有相同的结构。选择性地，设置在处理室260的同一组中的基板处理装置300可以具有相同的结构，并且设置在处理室260的不同组中的基板处理装置300可以具有不同的结构。
基板处理装置300执行对基板表面进行改性和清洁的工艺。图2是表示图1的基板处理装置的横截面图。参考图2，基板处理装置300包括：处理容器320、旋转头340、升降单元360、液体供应单元370和控制器500。
处理容器320设置有执行基板处理工艺的处理空间。处理容器320具有开口的上侧。处理容器320包括内部收集容器322和外部收集容器326。每个收集容器322、326收集在工艺中使用的处理液中彼此不同的处理液。内部收集容器322设置成围绕旋转头340的环形形状。外部收集容器326设置成围绕内部收集容器322的环形形状。内部收集容器322的内部空间322a和内部收集容器322与外部收集容器326之间的间隙326可以用作处理液分别流入内部收集容器322和外部收集容器326的入口。根据实施方式，每个入口322a、326a可以放置在彼此不同的高度。收集管线322b、326b分别连接到入口322、326的底侧。流入每个入口322、326的处理液可以通过作为外部处理液再生系统(未示出)的收集管线322b、326b被再次使用。
旋转头340设置成基板支撑单元320，以在处理期间旋转并支撑基板W。旋转头340具有主体342、支撑销344、卡盘销346和支撑轴348。当从顶部观察时，主体342通常设置成使得顶部主体342的上表面设置成圆形。可旋转的支撑轴348固定地连接到由驱动件349驱动的主体342的底侧。
支撑销344设置成多个数量。多个支撑销344设置在主体342的上表面的边缘处并彼此间隔开，并且从主体342向上突出。支撑销344通常布置成具有环形形状。支撑销344支撑与主体342的上表面间隔开的基板W的背侧。
卡盘销346设置成多个数量。卡盘销436布置成比支撑销344更远离主体342的中心。卡盘销436设置成从主体342向上突出。卡盘销436支撑基板W的侧部，以防止当旋转头340旋转时基板W从正确位置偏离到侧面方向。卡盘销346设置成沿主体342的半径方向在待机位置和支撑位置之间线性移动。待机位置比支撑位置更远离主体342的中心。当基板W被装载至旋转头340和从旋转头340被卸载时，将卡盘销346放置在待机位置上，并且当处理基板W时，将卡盘销346放置在支撑位置上。支撑位置上的卡盘销346与基板的侧部接触。
升降单元360使处理容器320线性地上下移动。当处理容器320上下移动时，处理容器320相对于旋转头340的相对高度变化。升降单元360具有支架362、移动轴364和驱动器366。支架362是固定地连接到处理容器320的外壁，并且通过驱动器366朝上下方向移动的移动轴364固定地连接到支架362。当将基板放置在旋转头340上或者当从旋转头340吊离时，处理容器320下降以使旋转头340从处理容器320向上突出。此外，在处理期间，根据基板W中供应的处理液的类型而控制处理容器320的高度，从而处理液流入预定的收集容器360中。选择性地，升降单元360可以使旋转头340上下移动。
液体供应单元370将处理液供应到基板W。液体供应单元370包括：化学品构件380、预处理构件400、冲洗构件410、替换构件420、照射构件450和控制器500。
化学品构件380将化学品供应到基板W上。化学品构件380包括喷嘴移动构件381和化学品喷嘴390。喷嘴移动构件381将化学品喷嘴390移动到处理位置和待机位置。处理位置是化学品喷嘴390面向被支撑在基板支撑单元340上的基板W的位置，并且待机位置是化学品喷嘴390在处理位置之外的位置。喷嘴移动构件381包括支撑轴386、支撑臂382和驱动构件388。支撑轴386位于处理容器320的一侧。支撑轴386具有杆状，其长度方向面向第三方向。支撑轴386设置成可以由驱动构件388旋转。支撑臂382联接到支撑轴386的上端。支撑臂382从支撑轴386垂直延伸。化学品喷嘴390固定地联接到支撑臂382的一端。当支撑轴386旋转时，化学品喷嘴390可与支撑臂382摆动。化学品喷嘴390可以被摆动并移动到处理位置和待机位置。化学品喷嘴390可以定位成在处理位置与基板W的中心轴重合。例如，化学品可以是烯烃类液体。该化学品的双键结合的碳原子数(C)可以是6至20。
或者，支撑轴386可以设置成可上下移动。此外，支撑臂382可以设置成可沿其长度方向前后移动。
预处理构件400将处理液供应到基板W上。预处理构件400包括喷嘴移动构件和预处理喷嘴402。预处理构件400的喷嘴移动构件具有与上述化学品构件380的喷嘴移动构件381相同的形状。因此，将省略其详细描述。例如，处理液可以是含有氟化氢(HF)的液体。
冲洗构件410将冲洗液供应到基板W上。冲洗构件410包括喷嘴移动构件和冲洗喷嘴412。冲洗构件410的喷嘴移动构件具有与上述化学品构件380的喷嘴移动构件381相同的形状。将省略其详细描述。例如，冲洗液可以是纯的。
替换部件420将有机溶剂供应到基板W上。残留在基板W上的冲洗液可以用有机溶剂替换。替换构件420包括喷嘴移动构件和替换喷嘴422。替换构件420的喷嘴移动构件具有与上述化学品构件380的喷嘴移动构件381相同的形状。将省略其详细描述。例如，有机溶剂可以是异丙醇(IPA)溶液。
照射构件450引起基板W和化学品之间的自由基反应。照射构件450加热基板W。照射构件450包括灯452和加热器454。灯452在基板W的顶部处照射光。灯452安装在化学品喷嘴390中。灯452位于化学品喷嘴390的一侧。根据一个示例，光可以包括紫外线(UV)辐射。
加热器454加热由基板支撑单元340支撑的基板W。加热器454定位成面向基板W的未处理表面。在此，基板W的未处理表面相当于基板W的底表面。加热器454安装在旋转头342的上表面上。例如，加热器454可以在室温至200℃下产生热量。或者，加热器454可以设置在化学品喷嘴390的另一侧，并且定位成面向基板W的上表面。
控制器500控制预处理喷嘴402、化学品喷嘴、冲洗喷嘴412、替换喷嘴422和照射构件450，从而依次执行预处理步骤S10、表面改性步骤S20、冲洗步骤S30和替换步骤S40。在预处理步骤S10中，用处理液处理基板W，并且在表面改性步骤S20中，用化学品处理基板W。在冲洗步骤S30中，用冲洗液处理基板W，在替换步骤S40中，用有机溶剂处理基板W。控制器500在表面改性步骤S20中照射光，并控制照射构件450，使得基板W被加热。选择性地，控制器500可以控制以在表面改性步骤S20中执行对基板W的加热或光照射。
将描述使用上述基板处理装置300处理基板W的工艺。如上所述，依次执行预处理步骤S10、表面改性步骤S20、冲洗步骤S30和替换步骤S40。图3是表示使用图2的基板处理装置来处理基板的工艺的流程图。图4至图7是表示使用图2的液体供应单元来处理基板的工艺的视图。
当执行预处理步骤S10时，预处理喷嘴402移动到处理位置以将处理液供应到基板W上。用含有氟化氢(HF)的处理液对基板W的表面进行反应处理。当预处理步骤S10完成时，预处理喷嘴402移动到待机位置，并且执行表面改性步骤S20。
当执行表面改性步骤S20时，化学品喷嘴移动到处理位置以将化学品供应到基板W上。在表面改性步骤S20期间，通过加热器454加热基板W，并用光照射基板W表面。因此，该化学品通过自由基反应与W的表面反应，并在基板W的上表面上形成疏水膜。形成在基板W上的疏水膜的程度与基板W的加热温度和处理时间成正比。也就是说，疏水膜的程度随着加热温度的升高和表面改性步骤S20的处理时间增长而增加。当表面改性步骤S20完成时，化学品喷嘴390移动到待机位置，并进行冲洗步骤S30。根据一个示例，表面改性步骤S20可以在2分钟内。
当执行冲洗步骤S30时，冲洗喷嘴412移动到处理位置以将冲洗液供应到基板W上。冲洗液冲洗残留在基板W上的化学品或颗粒。当冲洗步骤S30完成时，冲洗喷嘴412移动到待机位置，并且执行更换步骤S40。
当执行替换步骤S40时，替换喷嘴422移动到处理位置以将有机溶剂供应到基板W上。有机溶剂替换残留在基板W上的冲洗液。当替换步骤S40完成时，可以进一步执行干燥步骤，用于除去残留在基板W上的有机溶剂。在干燥步骤中，可以将惰性气体供应到基板W上，或者可以进行超临界处理和干燥。

Claims (9)

1.一种用于处理基板的方法，包括：
预处理步骤，用于将含有氟化氢的处理液供应到所述基板并处理所述基板；
表面改性步骤，用于在所述预处理步骤之后将烯烃类化学品供应到基板上以将所述基板的表面从亲水状态改变为疏水状态；
冲洗步骤，用于在所述表面改性步骤之后将冲洗液供应到所述基板并处理所述基板；以及
替换步骤，用于在所述冲洗步骤之后将有机溶剂供应到所述基板以替换残留在所述基板上的所述冲洗液。
2.根据权利要求1所述的方法，其中，在所述表面改性步骤中，所述烯烃类化学品与所述基板的表面发生自由基反应。
3.根据权利要求2所述的方法，其中，通过用紫外线照射所述基板来产生所述自由基反应。
4.根据权利要求2所述的方法，其中，通过加热所述基板来产生所述自由基反应。
5.根据权利要求3所述的方法，其中，所述基板的温度为200℃以下，且所述表面改性步骤的处理时间在2分钟以内。
6.一种基板处理装置，包括：
基板支撑单元，用于支撑所述基板；和
液体供应单元，用于将液体供应到所述基板支撑单元，
其中，所述液体供应单元包括：预处理喷嘴，用于排出含有氟化氢的处理液；化学品喷嘴，所述化学品喷嘴用于将烯烃类化学品供应到基板上，以使所述基板的表面从亲水状态变为具有疏水性；冲洗喷嘴，用于将冲洗液供应到所述基板并处理所述基板；以及替换喷嘴，用于将有机溶剂供应到所述基板以替换残留在所述基板上的所述冲洗液，
其中，所述液体供应单元包括控制器，所述控制器用于控制所述预处理喷嘴、所述化学品喷嘴、所述冲洗喷嘴以及所述替换喷嘴，从而依次执行预处理步骤、表面改性步骤、冲洗步骤和替换步骤。
7.根据权利要求6所述的装置，
其中，所述控制器控制所述化学品喷嘴和所述预处理喷嘴，以将处理液供应到所述基板上之后供应所述烯烃类化学品。
8.根据权利要求6或7所述的装置，其中，所述液体供应单元包括加热器，所述加热器用于加热由所述基板支撑单元所支撑的所述基板。
9.根据权利要求6或7所述的装置，其中，所述液体供应单元包括灯，所述灯用于将紫外光照射到由所述基板支撑单元所支撑的所述基板上。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195835A (ja) * 1998-12-24 2000-07-14 Toshiba Corp 半導体装置の製造方法及び製造装置
JP2010153773A (ja) * 2008-11-21 2010-07-08 Meidensha Corp 基板処理方法とその装置、及び基板
CN103681236A (zh) * 2012-08-31 2014-03-26 细美事有限公司 基板处理方法
CN103854987A (zh) * 2012-12-04 2014-06-11 中芯国际集成电路制造(上海)有限公司 伪栅的形成方法、选择性沉积硅的方法和插塞的形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100686780B1 (ko) 2006-03-30 2007-02-26 엘에스전선 주식회사 소수성 유기박막 구조 및 그 제조방법
US8084087B2 (en) * 2007-02-14 2011-12-27 The Board Of Trustees Of The Leland Stanford Junior University Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition
US20120077045A1 (en) 2009-11-12 2012-03-29 Ecolab Usa Inc. Soil resistant cleaner and surface treatment
JP5350424B2 (ja) 2011-03-24 2013-11-27 東京エレクトロン株式会社 表面処理方法
KR20140029095A (ko) 2012-08-31 2014-03-10 세메스 주식회사 기판 처리 방법
CN105026058B (zh) 2013-03-14 2017-10-10 东京毅力科创株式会社 用于衬底漂洗和干燥的方法
JP6114636B2 (ja) 2013-06-06 2017-04-12 東京エレクトロン株式会社 乾燥装置及び乾燥処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195835A (ja) * 1998-12-24 2000-07-14 Toshiba Corp 半導体装置の製造方法及び製造装置
JP2010153773A (ja) * 2008-11-21 2010-07-08 Meidensha Corp 基板処理方法とその装置、及び基板
CN103681236A (zh) * 2012-08-31 2014-03-26 细美事有限公司 基板处理方法
CN103854987A (zh) * 2012-12-04 2014-06-11 中芯国际集成电路制造(上海)有限公司 伪栅的形成方法、选择性沉积硅的方法和插塞的形成方法

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