CN107437496B - 用于处理基板的装置和方法 - Google Patents

用于处理基板的装置和方法 Download PDF

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CN107437496B
CN107437496B CN201710383849.5A CN201710383849A CN107437496B CN 107437496 B CN107437496 B CN 107437496B CN 201710383849 A CN201710383849 A CN 201710383849A CN 107437496 B CN107437496 B CN 107437496B
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金大民
李暎熏
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Semes Co Ltd
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Abstract

提供了一种用于处理基板的装置和方法，该方法将具有薄膜的基板上的凹部内的颗粒除去，其中在所述薄膜上形成有在其上表面上具有所述凹部的图案。根据本发明的基板处理方法包括：渗透步骤，用于将含有超临界有机化学溶液的处理液渗透到所述凹部中；加热步骤，用于在所述渗透步骤之后加热所述基板。

Description

用于处理基板的装置和方法
技术领域
本发明涉及一种用于处理基板的装置和方法。
背景技术
近来，随着半导体器件(例如半导体晶片、光掩模和LCD)的表面结构已经变得高度集成化，在这些器件中使用的图案已被进一步精细化。为了形成这种图案，必然需要蚀刻工艺，并且还需要用于除去残留污染物的清洗工艺。
图1是示出将一般有机化学溶液供给到在其上形成有具有高纵横比(HAR)图案的基板的横截面图。参考图1，当将在其上形成有具有高纵横比的图案(包括凹部1)的基板2设置为待清洗对象时，通常使用有机化学溶液3进行清洗。此时，当使用一般的有机化学溶液3作为清洗溶液时，由于有机化学溶液3的表面张力和滞留在凹部1中的气体的压力，有机化学溶液3不能而完全渗透到凹部1中，从而不能除去凹部1中的异物。
发明内容
本发明的实施方式提供了一种基板处理装置和方法，其可以清洗在其上表面上形成有具有高纵横比图案的基板的凹部中的异物。
本发明构思的目的不限于上述描述。本领域技术人员从下面的描述中可以理解本发明构思的其它目的。
本发明构思的实施方式提供了一种用于处理基板的方法，其将具有薄膜的基板上的凹部内的颗粒除去，其中在所述薄膜上形成有在其上表面上具有所述凹部的图案。用于基板处理的方法包括：渗透步骤，用于将含有超临界有机化学溶液的处理液渗透到凹部中；和加热步骤，用于在渗透步骤之后加热基板。
渗透步骤可以在高压室中进行，并且加热步骤可以在真空烘焙室中进行。
图案可以包括具有凹部的氮化钛(TiN)电容器。
有机化学溶液可以是异丙醇(IPA)。
在加热步骤中，将基板加热至200℃以上。
此外，本发明构思的实施方式提供了一种基板处理装置，其将具有薄膜的基板上的凹部内的颗粒除去，其中在所述薄膜上形成有在其上表面上具有所述凹部的图案，所述基板处理装置包括：高压室，在其中进行渗透工序以将含有超临界状态的有机化学液体的处理液渗透到凹部中；真空烘焙室，在其中进行用于加热基板的工序；和传送单元，用于在高压室和真空烘焙室之间传送基板。
基板处理装置还包括控制器，用于控制高压室、真空烘焙室和传送单元，其中控制器控制传送单元以将已完成在高压室中的工序的基板从高压室传送到真空烘焙室。
图案可以包括具有凹部的氮化钛(TiN)电容器。
有机化学溶液可以是异丙醇(IPA)。
在真空烘焙室中将基板加热至200℃以上。
根据实施方式的方法和装置可以清洗具有高纵横比图案的基板的凹部中的异物。
附图说明
图1是示出将一般有机化学溶液供给到在其上形成有具有高纵横比(HAR)图案的基板的横截面图。
图2是示意性地示出根据本发明的实施方式的基板处理装置的平面图。
图3是示出在其上形成有高纵横比图案的基板的示例的立体图。
图4是示出图2的高压室的横截面图。
图5是示出图2的真空烘焙室的横截面图。
图6是示出本发明的实施方式的基板处理方法的流程图。
图7是示出在进行根据本发明的实施方式的基板处理方法之前的基板状态的横截面图。
图8至图10示出在根据本发明的实施方式的基板处理方法的各步骤中的基板状态。
图11是示出在其上形成有高纵横比图案的基板的另一示例的横截面图。
具体实施方式
将在下文中参考附图更全面地描述各个示例性实施方式，在附图中示出了一些示例性实施方式。然而，本发明可以以不同的形式实施，并且不应被解释为限于本文所阐述的实施方式。而是，提供这些实施方式，使得本公开将是彻底和完整的，并且将向本领域技术人员充分地传达本发明的范围。因此，夸大了附图的特征以强调确切的解释。
图2是示意性地示出根据本发明的实施方式的基板处理装置10的平面图。图3是示出在其上形成有高纵横比图案的基板100的示例的立体图。参考图2和图3，基板处理装置10供给处理液以清洗基板100。基板100可以设置为具有薄膜的基板100，在薄膜上形成有高纵横比图案。根据实施方式，在基板100上形成的图案可以包括具有凹部110的氮化钛(TiN)电容器120。TiN电容器120从基板100的上表面沿向上方向延伸，并且具有圆柱形，该圆柱形的纵向为竖直方向。在基板100上设置有多个TiN电容器120。
当将具有薄膜(在其顶表面上形成有具有凹部110的高纵横比图案)的基板100设置为基板处理装置10中的待清洗对象时，基板处理装置10通过进行清洗处理去除凹部110中的颗粒200。根据实施方式，基板处理装置10包括高压室400、传送单元600、真空烘焙室800和控制器900。在图2中，示出了分别逐一设置有高压室400、传送单元600和真空烘焙室800。然而，可以根据需要设置多个高压室400、传送单元600和真空烘焙室800。
图4是示出图2的高压室400的横截面图。参考图4，在高压室400中，进行将含有超临界状态的有机化学液体的处理液浸入凹部110中的工序。高压室400具有用于在高压状态下使用超临界有机化学溶液清洗基板100的结构。高压室400包括壳体410、基板支撑单元440、升降构件450、加热构件460、流体供给单元470和阻挡构件480。
壳体410提供用于处理基板100的处理空间412。在处理基板100时，壳体410将处理空间412与外部隔离。壳体410包括下壳体420和上壳体430。下壳体420具有在其顶部开口的圆杯形。排出口426形成在下壳体420的内底表面上。当从顶部观察时，排出口426可以形成在偏离于下壳体420的中心轴的位置处。减压构件连接到排出口426以排出在处理空间412中产生的颗粒。处理空间412还可以通过排出口426调节其内部压力。
上壳体430与下壳体420组合以在其中形成处理空间412。上壳体430位于下壳体420的上方。上壳体430具有圆板形。例如，上壳体430可以具有的直径使得：在上壳体430的中心轴和下壳体420的中心轴彼此重合的位置，上壳体430的底部朝向下壳体420的上端。在上壳体430和下壳体420之间可以设置有将处理空间412密封的密封构件492。因此，通过排出口426供给或排出气体，能够将内部压力调节为高压状态或接近真空的状态。
基板支撑单元440在处理空间412中支撑基板100。基板支撑单元440支撑基板100，使得基板100的处理表面朝上。基板支撑单元440包括支撑件442和基板支撑件444。支撑件442设置成从上壳体430的底表面向下延伸的杆状。设置有多个支撑件442。例如，支撑件442的数量可以为四个。基板支撑件444支撑基板100的底部边缘区域。设置有多个基板支撑件444，各自支撑基板100的不同区域。例如，基板支撑件444的数量可以为两个。当从顶部观察时，基板支撑件444设置成圆板形。当从顶部观察时，基板支撑件444位于支撑件442的内侧。每个基板支撑件444设置成彼此组合具有环形。各个基板支撑件444彼此间隔开。
升降构件450调节上壳体430和下壳体420之间的相对位置。升降构件450将上壳体430和下壳体420中的一个移动。在该实施方式中，上壳体430的位置被固定，并且通过移动下壳体420来调节上壳体430和下壳体420之间的距离。可替选地，基板支撑单元440可以安装在固定的下壳体420中，并且上壳体430可以被移动。升降构件450移动下壳体420，使得上壳体430和下壳体420之间的相对位置移动到打开位置和关闭位置。打开位置是上壳体430和下壳体420彼此间隔开使得处理空间412与外部连通的位置。关闭位置是上壳体430和下壳体420彼此接触从而将处理空间412关闭以与外部隔离的位置。升降构件450上下移动下壳体420以打开或关闭处理空间412。升降构件450包括将上壳体430和下壳体420彼此连接的多个升降轴452。升降轴452位于下壳体420的上端和上壳体430之间。升降轴452沿着下壳体420的上端的周向布置。每个升降轴452能够通过上壳体430固定地联接到下壳体420的上端。随着升降轴452上下移动，下壳体420的高度改变，从而可以调整上壳体430和下壳体420之间的距离。
加热构件460加热处理空间412。加热构件460将供给到处理空间412的超临界状态的有机化学溶液加热到高于临界温度的温度，并且保持超临界有机化学溶液中的温度。加热构件460可以嵌入在上壳体430和下壳体420中的至少一个的壁中。例如，加热构件460可以设置为从外部接收电力并产生热量的加热器。
流体供给单元470将处理液供给到处理空间412。处理液被提供为超临界状态的有机化学液体。例如，可以提供异丙醇(IPA)作为处理液。流体供给单元470包括上供给口472和下供给口474。上供给口472形成在上壳体430中，下供给口474形成在下壳体420中。上供给口472和下供给口474定位成沿垂直方向彼此朝向。上供给口472和下供给口474定位成与处理空间412的中心轴重合。同一种超临界有机化学溶液被分别供给到上供给口472和下供给口474。根据一个示例，可以从与基板100的未处理表面相对的供给口供给超临界有机化学溶液，然后可以从与基板100的处理表面相对的供给口供给超临界有机化学溶液。因此，可以从下供给口474供给超临界有机化学溶液，然后可以从上供给口472供给超临界有机化学溶液。这是为了防止将初始供给的流体(尚未达到临界压力或临界温度)供给到基板100。
阻挡构件480防止从下供给口474供给的流体直接供给到基板100的未处理表面。阻挡构件480包括阻挡板482和支撑件484。阻挡板482位于下供给口474和基板支撑单元440之间。阻挡板482设置成具有圆板形。阻挡板482的直径比下壳体420的内径小。当从顶部观察时，阻挡板482具有遮掩下供给口474和排出口426两者的直径。例如，阻挡板482可以设置成具有大于或等于基板100的直径的直径。支撑件484支撑阻挡板482。支撑件484设置有多个并且沿着阻挡板482的周向布置。各个支撑件484设置成以规则的间隔彼此间隔开。
再次参考图2，传送单元600将基板100在高压室400和真空烘焙室800之间传送。传送单元600位于高压室400和真空烘焙室800之间。传送单元600的手状部可以以能够支撑基板100的各种构造和形状来设置。例如，传送单元600的手状部可以设置为真空抽吸方法的手状部。根据实施方式，传送单元600的手状部能够通过驱动构件沿竖直方向和水平方向线性运动，并且设置成可绕竖直方向旋转。
图5是示出图2的真空烘焙室800的横截面图。参考图5，在真空烘焙室800中，进行加热基板100的工序。在真空烘焙室800中，进行加热基板100的工序，所述基板100已完成在高压室400中将超临界有机化学溶液浸入凹部110的工序。真空烘焙室800具有能够在真空状态下加热基板100的构造。真空烘焙室800包括壳体810、加热板820、热处理构件830和盖842。
壳体810提供处理空间812，用于在其中加热基板W。壳体810设置成在其顶部开口的圆柱形。加热板820位于壳体810的处理空间812中。加热板820设置为圆板的形式。加热板820的上表面设置为支撑区域，用于放置基板W。在加热板820的上表面上形成有多个销孔。销孔彼此等间隔隔开。每个销孔设有升降销(未示出)。升降销(未示出)设置为上下运动。例如，可以设置三个销孔。
热处理构件830将放置在加热板820上的基板W加热至预定温度。热处理构件830包括多个加热器830。各个加热器830位于加热板820内部。各个加热器830位于同一平面上。各个加热器830加热加热板820的不同区域。与各个加热器830相对应的加热板820的区域设置为加热区。例如，加热区可以为十五个。例如，加热器830可以是热电元件或热线。
盖842打开和关闭壳体810的处理空间812。盖842可以安装到壳体810以将处理空间812与外部隔离。盖842设置成具有圆板形。排出孔843形成在盖842中。排出孔843形成为与主体842的中心轴相对应。处理空间812中的空气和处理空间812中产生的颗粒通过排出孔843被排出到外部。压力调节器连接到排出孔843以抽吸处理空间812中的气体，从而使处理空间812的内部压力成为接近真空的压力状态。盖842通过驱动构件上下移动。驱动构件可以设置成能够使盖上下移动的各种构造和形状。
再次参考图2，控制器900控制高压室400、真空烘焙室800和传送单元600。控制器900控制传送单元600以将高压室400中的处理过的基板100从高压室400传送到真空烘焙室800。
使用上述基板处理装置10对根据本发明的实施方式的基板处理方法进行说明。图6是示出根据本发明的实施方式的基板处理方法的流程图。图7是示出在进行根据本发明的实施方式的基板处理方法之前的基板状态的横截面图。参考图6和图7，基板处理方法是清洗基板的方法。基板处理方法从具有薄膜(具有在其上表面具有凹部110的图案)的基板100中去除凹部110中的颗粒200。基板处理方法包括渗透步骤S10和加热步骤S20。
图8至图10示出在根据本发明的实施方式的基板处理方法的各个步骤中的基板的状态。
参考图8，在渗透步骤S10中，将含有超临界状态的有机化学溶液的处理液渗透到凹部110中。以表面张力为零的超临界状态供给有机化学溶液，有机化学溶液不会形成膜并且可以渗透到凹部110中，而不会被已经存在于凹部110中的气体的压力阻挡。因此，凹部110中的颗粒与有机化学溶液反应以形成反应物300。渗透步骤S10在高压室400中进行。例如，在渗透步骤S10中，将基板100放置在基板支撑单元440上，并且通过升降构件450将上壳体430和下壳体420移动到关闭位置，因此处理空间412被密封。通过排出口426供给加压气体，以保持能够将有机化学溶液保持在超临界状态的压力，加热构件460将处理空间412加热到能够将有机化学溶液保持在超临界状态的温度。当处理空间412中的压力和温度变成预定值时，流体供给单元470将超临界状态的有机化学液体供给到处理空间412。
在渗透步骤S10完成之后，传送单元600将基板100从高压室400传送到真空烘焙室800。
参考图9，在加热步骤S20中，在渗透步骤S10之后加热基板100。在真空烘焙室800中进行加热步骤S20。根据实施方式，在加热步骤S20中，可将基板100加热至200℃以上。通过对已完成渗透步骤S10的基板100进行加热，将颗粒的反应物300和有机化学溶液升华。因此，如图10所示，容易清洗凹部110中的颗粒。例如，在加热步骤S20中，在盖842打开下将基板100放置在加热板820上，并将盖842关闭。此后，将处理空间812通过排出孔843排出，使得处理空间812的内部保持在真空状态，并且通过加热器830加热基板100。
图11是示出在其上形成有高纵横比图案的基板100的另一示例的横截面图。参考图11，不同于图3，可以在基板100上设置STI型图案。此外，可以根据基板的类型，将在其上形成有高纵横比图案的基板设置成各种形状和结构。

Claims (9)

1.一种用于处理基板的方法，该方法将具有薄膜的基板上的凹部内的颗粒除去，其中在所述薄膜上形成有在其上表面上具有所述凹部的图案，所述方法包括：
渗透步骤，用于将含有超临界有机化学溶液的处理液渗透到所述凹部中，其中在所述渗透步骤中，所述颗粒与所述超临界有机化学溶液反应以形成反应物；和
加热步骤，用于在所述渗透步骤之后加热所述基板，以升华并去除所述渗透步骤中所述颗粒和所述超临界有机化学溶液形成的反应物，
其中所述有机化学溶液是异丙醇。
2.根据权利要求1所述的方法，其中所述渗透步骤在高压室中进行。
3.根据权利要求1所述的方法，其中所述加热步骤在真空烘焙室中进行。
4.根据权利要求1至3中任一项所述的方法，其中所述图案包括具有所述凹部的氮化钛电容器。
5.根据权利要求1至3中任一项所述的方法，其中在所述加热步骤中将所述基板加热至200℃以上。
6.一种基板处理装置，该装置将具有薄膜的基板上的凹部内的颗粒除去，其中在所述薄膜上形成有在其上表面上具有所述凹部的图案，所述基板处理装置包括：
高压室，在所述高压室中进行渗透工序以将含有超临界有机化学溶液的处理液渗透到所述凹部中，其中在所述渗透工序中，所述颗粒与所述超临界有机化学溶液反应以形成反应物；
真空烘焙室，在所述真空烘焙室中进行用于加热基板的工序，以升华并去除所述渗透工序中所述颗粒和所述超临界有机化学溶液形成的反应物；和
传送单元，用于在所述高压室和所述真空烘焙室之间传送所述基板，
其中所述有机化学溶液是异丙醇。
7.根据权利要求6所述的装置，还包括控制器，用于控制所述高压室、所述真空烘焙室和所述传送单元，
其中所述控制器控制所述传送单元以将已完成在所述高压室中的工序的所述基板从所述高压室传送到所述真空烘焙室。
8.根据权利要求6或7所述的装置，其中所述图案包括具有所述凹部的氮化钛电容器。
9.根据权利要求6或7所述的装置，其中在所述真空烘焙室中将所述基板加热到200℃以上。
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