CN107427964B - Device using laser patterning manufacture shadow mask and the method using laser patterning manufacture shadow mask - Google Patents

Device using laser patterning manufacture shadow mask and the method using laser patterning manufacture shadow mask Download PDF

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Publication number
CN107427964B
CN107427964B CN201580077730.4A CN201580077730A CN107427964B CN 107427964 B CN107427964 B CN 107427964B CN 201580077730 A CN201580077730 A CN 201580077730A CN 107427964 B CN107427964 B CN 107427964B
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laser beam
pattern
component
coverage
mask
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CN107427964A (en
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朴钟甲
金度勋
金范相
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AP Cells Inc
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AP Cells Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Laser Beam Processing (AREA)
  • Physical Vapour Deposition (AREA)
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Device and method according to the present invention for manufacturing shadow mask include: the step of positioning is provided with the Mask portion for covering pattern corresponding with mask pattern to be fabricated on the top of pedestal；And the step of corresponding to the mask pattern for covering pattern is prepared on the base and irradiating laser beam from the top of Mask portion and handling using the laser beam for having already passed through Mask portion pedestal, multiple coverage patterns are wherein provided with different width, and provide the direction width positioned towards pedestal narrower coverage pattern so that from the illuminated laser beam in the top of Mask portion after gradually passing through multiple coverage patterns it is illuminated on the base.In addition, the intensity around pattern is gradually adjusted using phase-shift mask and slit mask, to make taper process needed for can be carried out deposition mask.

Description

It is manufactured using the device of laser patterning manufacture shadow mask and using laser patterning The method of shadow mask
Technical field
The present invention relates to a kind of device and method for manufacturing shadow mask (shadow mask).More specifically, the present invention relates to And a kind of covering for manufacturing shade using the laser patterning techniques for being readily formed fine pattern and there is simple procedure The device of film and the method that fine metal mask is manufactured using laser patterning.
Background technique
For the flat-panel monitor of such as LCD (liquid crystal display) and OLED (organic light emitting apparatus) to high-resolution need It wants, increasingly becomes smaller for manufacturing the size of pattern of flat-panel monitor.
For example, it is desired to the pattern of the organic luminous layer of R (red), G (green) and B (blue) is formed, to manufacture OLED, And by using the deposition of the shadow mask with fine pattern (rectangle such as corresponding with R, G, B dot structure and diamond shape) To form pattern.That is, when the luminous organic material of R, G, B pass through the pattern for the shadow mask of deposition, the material Material is deposited with the shape of pattern, therefore obtains the luminescent material of R, G, B.
As the shadow mask for deposition, usually using exposure mask made of the metal such as abundant steel or stainless steel (FMM: fine metal mask (Fine Metal Mask)).
This shadow mask is manufactured by photoetching.That is, shadow mask is manufactured by following procedure: Process, the prebake conditions of heating photoresist (PR) in the applied on top photoresist (PR) of pedestal made of metal Process, will have and the photomask of the corresponding pattern of the institute's phase pattern that be formed to be placed on the shadow mask for being used to deposit On pedestal coated with photoresist (PR) and then the development (developing) after exposing the process of photomask, exposure With the process of the PR removing of the process of rear baking, the process of wet etching and removal photoresist.
However, as described above, in order to manufacture the OLED of the mobile device with high-resolution such as UHD, needing shape At fine pattern, therefore the pattern for the exposure mask for being used to deposit must be reduced to microsize.Furthermore, it is necessary to prevent so-called yin Shadow effect, wherein the organic material being radially deposited on processed pattern desirably through 45 degree of conical by its shape is reached at it It is unevenly applied before to position to be patterned due to precipitous processing structure.
For example, needing 30 μm or smaller fine to manufacture the high-resolution display with 500ppi or more Pattern, therefore for such as available full HD (Full HD) resolution ratio device or more on the market, needing to manufacture has 30 μm or smaller fine pattern for deposition FMM shadow mask.However, due to the basic problem (isotropism of wet etching Etching means the circulating propagation of etching behavior, is hardly formed sharp edges and wall), it is difficult to pass through photoetching via the process Form 30 μm or the smaller fine pattern with linear taper shape.Therefore, in order to solve this problem, need to make film more Thin and the second wet etching of progress, is followed by the front of rear side.
Currently, use with about 20 μm of thickness of metal film as pedestal, but since the thickness of shadow mask is small and Exposure mask is recessed during large-area treatment, so being difficult to control and handling this metal film.
Summary of the invention
Technical problem
The object of the present invention is to provide a kind of to be manufactured shadow mask using laser patterning techniques (or fine metal is covered Film) device, thus compared with the prior art, the device can by using single laser process on the base directly formed essence Thin pattern and manufacture shade using the exposure mask projection and optical system that are suitably designed according to the size of institute's phase pattern and gap Exposure mask.
It is a further object to provide a kind of method for manufacturing shadow mask, use is able to easily form 20 μm or smaller fine pattern laser patterning, this be difficult with wet etching realization, fine pattern have for depositing Linear taper shape needed for the shadow mask of organic material so that this method can simplify manufacturing process, and can be easy Ground manufactures the UHD resolution ratio AMOLED etc. used in the mobile device, and needs about 10 μm of pattern.
It is a further object to provide a kind of methods for manufacturing shadow mask, to use in the actual process Fine pattern is easy to process or controls, and can be ensured by providing the measurement for the shadow mask recess of large area Journey stability and use thick shadow mask.
Technical solution
To achieve the goals above, according to an aspect of the invention, there is provided a kind of use laser patterning techniques Manufacture the device with the shadow mask of fine mask pattern.The device includes: light beam supply unit, supplies laser beam；Light Beam control unit controls the position of the laser beam from light beam supply unit；Diffraction optical element unit, by laser beam point It is cut into multiple laser beams with uniform strength；Cover component, have and cover pattern, the coverage pattern correspond respectively to make by The mask pattern that the laser beam of segmentation passes through, and the edge of coverage component masking laser beam；Zoom lens unit, adjustment Gap and pattern across the laser beam for covering component；And projecting cell, zoom is passed through with scheduled minification The laser beam of lens unit is sent to pedestal.
Laser beam from light beam supply unit can be for processing receiving with tens femtoseconds with up to several hundred for metal The pulse laser beam of pulse width between second.
Light beam supply unit may include laser and be disposed in around the output port of laser and send out laser beam It is sent to multiple reflecting mirrors of beam control unit.
Beam control unit may include the beamstability module and adjustment laser beam ruler of the position of automatic compensation laser beam Very little optical beam expander, and beamstability module may include sensor, on the position and motor for sensing laser beam Multiple reflecting mirrors and the position for compensating laser beam automatically.
Diffraction optical element unit may include: diffraction optical element comprising beam shaping and beam splitter function part； And focusing lens unit, it sends the laser beam of segmentation to focus the coverage component of side, diffraction optics member can be passed through Laser beam is divided into one to 500 laser beam by the beam splitter function part of part, and the gap of divided laser beam can be 0.1 to 50 times of the size of the pattern formed by diffraction optical element.
According to the size of the mask pattern formed on the base, can be contracted by projecting cell lens with 1 to 50 times of optics Small rate come determine by diffraction optical element production pattern size.
Zoom lens unit can have ± 70% zooming range.
According to another aspect of the present invention, a kind of method that shadow mask is manufactured using laser patterning is provided, It include: that will be placed on the base with the coverage component for covering pattern corresponding with institute's phase mask pattern；And by from top Bombardment with laser beams is formed into pattern corresponding with the coverage pattern on the pedestal to component is covered, and use is across institute The laser beam for stating coverage component processes the pedestal, and which provide multiple coverage patterns with different in width, and And the coverage pattern with small width is arranged to close to the pedestal, so that being radiated swashing for the coverage component from top The pedestal is advanced to beam sequence by the coverage pattern.
Coverage pattern can be coaxially arranged.
Multiple coverage components can be set and have corresponding coverage pattern, and covering pattern can be vertically through coverage The presumptive area of component is formed and the hole with different in width, and from top by bombardment with laser beams to the process for covering component It may include the process that transmission laser beam passes through coverage component for several times.
During transmitting laser beam by covering component, laser beam can pass through the coverage structure with narrow opening pattern Part is transmitted, this is because the process of transmission laser beam continues process to the end.
Covering component can be the phase-shift masks with multiple coverage patterns, and multiple coverage pattern has different in width, And the phase of laser beam can be moved at different angles, and from top by bombardment with laser beams to cover component process In, when from top by bombardment with laser beams to the coverage component for phase-shift mask when, laser beam can be transmitted through phase can be with By mobile coverage pattern.
Covering component can be slit mask, have the main body of transmission laser beam, in main body in the width direction each other Multiple light shield layers spaced apart and the multiple transmission regions for being limited between light shield layer and transmitting laser beam；Light shield layer can Reduced on the width with the center from outside towards main body；Transmission region can the center from outside towards main body increase on the width Add；And by bombardment with laser beams to cover component during, laser beam can be radiated as slit mask from top Component is covered, so that the intensity of the laser beam for the base region being radiated under relatively wide transmission region, which is greater than, is radiated phase To the intensity of the laser beam of the base region under narrow transmission region.
By transmission laser beam by covering component, the mask pattern that its internal diameter reduces downwards can be formed on the base.
The multiple mask patterns being separated from each other can be formed on entire pedestal by moving horizontally pedestal.
Pedestal may include metal.
Beneficial effect
The present invention relates to a kind of laser aids, can be without a series of processes by straight on the base Connect to form fine pattern and the exposure mask projection that is suitably designed using the size and gap according to institute's phase pattern and optical system come Manufacture the shadow mask with fine pattern.
In addition, picture pattern for clarity, executes edge sharpening by using component is covered, so that being each passed through system Make the pattern that the laser beam of pattern is advanced to scheduled minification on pedestal, so that fine patterning is possible.
According to the method for the manufacture shadow mask of embodiment according to the present invention, and making bombardment with laser beams on the base Be patterned to be formed shadow mask, thus such as with the method for the prior art for using photoetching process in comparison, can simplify Manufacturing process.Therefore, such as with it is in the prior art manufacture shadow mask method in comparison, it is possible to reduce manufacture shadow mask The time of cost.
In addition, the various devices of method needs and equipment of shadow mask are manufactured using photoetching in the prior art, including with In the coating machine, the heater for soft and hard baking, exposure sources, the unit for development, erosion that apply photoresist Carve unit and stripe cell.However, the method for manufacture shadow mask according to the present invention, can be used laser and can make to swash The optical system and exposure mask of light beam radiation project be accordingly used in manufacture shadow mask the equipment of manufacture shadow mask with it is existing It is simple that technology, which is compared, and therefore can significant reduction maintenance cost.
In addition, in the present invention, directly being processed by laser, harmful needed for photoetching can be prevented for environment Learn the pollution of the using and abolish of substance, air and water and the potential influence on worker.
Further, since needing to form the referred to as isotropic etching of linear taper shape with being difficult to by being lithographically formed Limitation taper fine pattern, so the thickness of pedestal must be reduced to about 20 μm, and be difficult to control or handle this Thin shadow mask.However, according to the present invention, forming pattern due to not using photoetching but laser beam on the base, can locating Thicker shadow mask is managed, therefore is easy to control or handles shadow mask when forming Thinfilm pattern on substrate.Furthermore, it is possible to make The recess of shadow mask with large area is minimized or is prevented.
In addition, taper figure can be simply formed when using laser and Galvano scanner to handle fine patterning Case simultaneously solves the problems, such as position precision.Further, since the laser of nanosecond or femtosecond can be used, it can be by making laser Beam radiates and makes due to minimizing with heat localization caused by the reacting of pedestal, it is possible to caused by preventing due to heat localization The shadow mask of difference.Further, since having used the light irradiation apparatus using diffraction optical system, can be formed simultaneously on the base Multiple patterns, therefore productivity can be improved.
Detailed description of the invention
When read in conjunction with the accompanying drawings from it is described in detail below will be more clearly understood above and other objects of the present invention, feature and Further advantage, in which:
Fig. 1 is the plan view of the shadow mask manufactured by the method for embodiment according to the present invention；
Fig. 2 is the cross-sectional view of shadow mask shown in Fig. 1；
Fig. 3 is to show the figure of the system configuration according to the present invention that shadow mask is manufactured using laser treatment.
Fig. 4 is the laser shown in the device according to the present invention for manufacturing shadow mask using laser patterning The figure of the transformation of beam.
Fig. 5 (a) to Fig. 5 (d) is the side for sequentially illustrating the manufacture shadow mask of first embodiment according to the present invention The view of method.
Fig. 6 is to show the multiple coverage structures for being used to manufacture shadow mask of the method for first embodiment according to the present invention The view of part.
Fig. 7 (a) to Fig. 7 (c) is the side for sequentially illustrating the manufacture shadow mask of second embodiment according to the present invention The view of method.
Fig. 8 is to show the coverage component for being used to manufacture shadow mask of the method for second embodiment according to the present invention View.
Fig. 9 (a) and Fig. 9 (b) is the side for sequentially illustrating the manufacture shadow mask of third embodiment according to the present invention The view of method；And
Figure 10 (a) and Figure 10 (b) are the methods according to a third embodiment of the present invention of showing for manufacturing shadow mask Coverage component view.
Specific embodiment
Optimal mode
The present invention relates to a kind of laser aids, can be by straight on the base without a series of processes Connect the pattern to form pixel shape and the exposure mask projection optical system being suitably designed using the size and gap according to institute's phase pattern To manufacture shadow mask.
In addition, for compared with the method for the prior art, the present invention relates to one kind by using laser shape on the base The method that shadow mask is manufactured at fine mask pattern can simplify manufacturing process by photoetching.Therefore, with the prior art In manufacture exposure mask method in comparison, it is possible to reduce manufacture shadow mask spend time.
Hereinafter, it will be described in detail with reference to the accompanying drawings the present invention.Fig. 1 is the method system by embodiment according to the present invention The plan view for the shadow mask made, Fig. 2 are the cross-sectional views of shadow mask shown in Fig. 1.Fig. 3 be show it is according to the present invention Manufacture the figure of the device of shadow mask for using laser patterning, and Fig. 4 be show it is according to the present invention for making The figure of the shape of the laser beam in the device of shadow mask is manufactured with laser patterning.
Such as Fig. 1 and shown in Figure 2, shadow mask 100 according to the present invention is had a structure in which, wherein to be deposited Multiple mask patterns 120 that OLED emissive material on to object (referred to below as substrate S) can pass through are separated from each other.? That is shadow mask 100 includes pedestal 110 and multiple mask patterns 120 by the formation of entire pedestal 110.
Shape, spread geometry or the structure of mask pattern 120 (that is, pattern of exposure mask), which correspond to, will be deposited over substrate S On film 10 pattern.As described above, mask pattern 120 is the region that primary deposit material passes through, and in pedestal Region in 110 region other than mask pattern 120 is the region of the deposition of barrier material.
That is, shadow mask 100 between the barrier zones and barrier zones of blocking raw material by being separated from each other And the mask pattern 120 for passing through raw material forms, wherein as described above, the spread geometry or structure of mask pattern 120 It is the pattern of exposure mask.
Shade is manufactured using laser patterning for manufacturing the according to the present invention of shadow mask with mask pattern The device of exposure mask is the device that the shadow mask with fine mask pattern is manufactured using laser patterning, as shown in Fig. 3 Out, comprising: light beam supply department 200 supplies laser beam；Beam control unit 210, control come from light beam supply unit The positions and dimensions of 200 laser beam；Laser beam is divided into and is distributed with uniform strength by diffraction optical element unit 220 Multiple laser beams；Component 230,240 and 250 is covered, the exposure mask figure for corresponding to and passing through the laser beam of segmentation is respectively provided with The coverage pattern of case, and the edge of laser beam is covered to sharpen beam shape；Zoom lens unit 260 is adjusted across screening Cover gap and the pattern of the laser beam of component 230,240 and 250；And projecting cell 270, it is passed through with scheduled minification The laser beam of Zoom lens unit 260 is sent to pedestal 110.
Light beam supply unit 200 according to the present invention supplies laser beam, it is preferable that the pulse width with pulse is (ultrashort Pulse) pulse laser beam between tens femtoseconds and several hundred picoseconds is suitable for handling pedestal made of metal.
Light beam supply unit 200 is made up of: laser 201, exports the laser beam with pulse width；And it is more A reflecting mirror 202, is disposed in around the output port of laser 201, and send beam control unit for laser beam 210。
For example, laser 201 can be the excimer laser of nanosecond, such as XeF, KrF, ArF and XeCl, nanosecond Solid-state laser, the picosecond laser of pulse width with picosecond or the femtosecond laser of the pulse width with femtosecond Device.Reaction according to material to wavelength, laser can be used all in infra-red range, visible-range and ultraviolet ray range Wavelength.Obviously, the type of laser is not limited to as described above, and is the basic material of shadow mask to be fabricated The various lasers that can form pattern on the base be available.
The positions and dimensions of laser beam of the control of beam control unit 210 from light beam supply unit 200.That is, Beam control unit 210 restricts the laser beam from laser, for example, laser beams position and adjust the size of laser beam To be suitable for optical system.
In detail, beam control unit 210 is by compensating the beamstability module 211 of laser beam position automatically and adjusting laser The optical beam expander 212 of beam size forms.
The beamstability module of automatic compensation laser beam position supplements the performance of diffraction optical element (DOE), performance Mainly it is excited the influence of light-beam position change.
In detail, beamstability module 211 is made up of: sensor, senses the position of laser beam；And it is multiple anti- Mirror is penetrated, compensates the position of laser beam on motor and automatically.That is, when laser beam is far from reference position, light beam Laser beam is automatically adjusted to reference position to restore the performance of diffraction optical element by stable module.
The optical beam expander 212 for adjusting laser beam size is Galileo optical beam expander in detail, and using two or More poly-lens, in the case where not by laser beam focus adjust laser beam size be suitable for diffractive optical element 220 (below It is described).Optical beam expander 212 prevents the air separation in the focal zone that may be generated in ultrashort pulse laser.
As described above, the laser beam with Gaussian intensity profile is divided into and has by diffraction optical element unit 220 Multiple laser beams of uniform strength distribution.In detail, diffraction optical element unit 220 is made up of: diffraction optical element, Including beam shaping 221 and beam splitter function part 222；And condenser lens, the laser beam components rearranged are sent To the coverage component 230,240 and 250 to focus side.
It is arranged for realizing the diffraction optical element of beam shaping and isolated function by beam shaping 221 and beam splitting Device 222 forms.Beam shaping 221 is usually formed the uniform beam distribution of flat-head type, and laser beam is divided by beam splitter 222 500 laser beams of Cheng Yizhi, wherein the gap for the laser beam divided can be the size of the pattern formed by diffraction optical element 0.1 to 50 times.
According to the size of the mask pattern formed on pedestal 110, by diffraction optical element production pattern size by Projecting cell optical device 270 is determined with 1 to 50 times of optical reduction rate.For example, if 270 lens of Projection Division are configured as There are five times of optical reduction rates for the size of 20 μm of mask pattern on pedestal, then diffraction optical element is configured such that The size for covering the pattern in component 230,240 and 250 is 100 μm.
Multiple laser beams are generated by beam shaping 221 and beam splitter 228, therefore multiple patterns can be formed simultaneously, And it therefore can increase the productivity of shadow mask.
Further, since sensitive to high-speed motion and temperature but mobile during being directed to large area may give birth to when showing up It is not used at the Galvano scanner of the seam error between the distortion and field of scanning field, therefore can be accurately by pattern It is located on substrate.
It is the screening for focusing side that the laser beam of segmentation from diffraction optical element reaches after passing through focusing lens unit Component 230,240 and 250 is covered, therefore obtains the laser beam with uniform strength distribution.
Covering component 230,240 and 250 and being respectively provided with to correspond to passes through the laser beam of segmentation from diffraction optical element The coverage pattern of mask pattern, therefore the edge by covering laser beam forms the image of the laser beam with sharp edge. That is, executing edge sharpening in order to be patterned to clearly image by using component 230,240 and 250 is covered, making It must be each passed through the pattern that the laser beam of pattern-making is advanced to scheduled minification on pedestal, so that fine patterning is can Can.
According to the energy level that laser beam applies, glass, the material, metal mask of chromium plating or dielectric mask can on quartz Be used to cover component 230,240 and 250.Passing through harness rather than multiple discrete beams with the exposure mask figure with aturegularaintervals In the case that case is screened, there is inevitably loss at there is no the region of opening.However, according to the present invention, leading to It crosses and only sends pattern for light beam, the optical efficiency of laser can be increased.
In addition, providing multiple coverage patterns with different in width, and cover in covering component 230,240 and 250 The width of pattern reduces as they arrive motor seat 110, so that laser beam gradually passes through multiple coverage patterns, this will be below Description.
Zoom lens unit 260 is set to adjust across the beam separation and size for covering component 230,240 and 250.It is logical Often, need to change the beam sizes covered on component and the pattern dimension for covering component 230,240 and 250, to adjust laser The size of the pattern of beam can adjust the gap between lens by using Zoom lens unit 260 to adjust the shape of pattern The gap and.
Zoom lens unit 260 is endowed about ± 70% zooming range, allows to be adjusted according to mask pattern sharp The size of the pattern of light beam.
It is configured to be sent to the throwing of pedestal 110 with the laser beam that scheduled minification passes through Zoom lens unit 260 Shadow unit 270 sends base for the image made of the laser beam for passing through coverage component 230,240 and 250 with scheduled minification Plate, wherein the size of pattern made of in this process is about 100nm to 1000 μm.
In the shadow mask according to the present invention by the device manufacturing for manufacturing shadow mask, as shown in Figure 2, The shape orientation of the mask pattern 120 of shadow mask 100 is diameter or the internal diameter reduction for being deposited the substrate S of object, that is, It says, the level cross-sectionn of mask pattern 120 is inclined.In other words, around the inner wall of the pedestal 110 of mask pattern 120 111 be taper, so that the distance between inner wall 111 reduces, that is to say, that inner wall 111 leans on each other when it reaches substrate S Closely.
The reason of mask pattern 120 of shadow mask 100 is taper be in the width direction of film 10 with uniform Thickness on substrate S deposition film 10.For example, if vertically forming mask pattern 120 in no inclined situation to base The top of plate S, then due to evaporation process with towards certain incidence angle of substrate occur the fact, so being deposited on substrate S The film shade phenomenon more relatively thin than other regions in the edge of mask pattern 120.In other words, film is in central area ratio The edge of pattern is thicker, so not being avoided that the so-called shade phenomenon as caused by precipitous pattern edge.
Therefore, it in order to form film (10) pattern with uniform thickness and preventing shade phenomenon, needs to make to deposit The mask pattern 120 that material passes through is tapered.
In the present invention that manufacture has the shadow mask of multiple taper mask patterns, as shown in Figure 2, according to reality Apply the shadow mask 100 that manufacture in the method for example has multiple taper mask patterns 120.
Fig. 4 shows the laser beam across the device according to the present invention for manufacturing shadow mask using laser patterning Shape, wherein from the shape for being previously seen laser beam corresponding with number shown in Fig. 3.
1. number is when the laser beam of the laser from light beam supply unit 200 passes through the light of beam control unit 210 The shape of laser beam when beam expander, 2. number is diffractive optical element 220,3. number is by diffractive optical element 220 4. the shape of the laser beam of segmentation, number are to cover component 230,240 and 250,5. number is across coverage component 230,240 and The shape of 250 laser beam, 6. number is the shape that laser beam passes through Zoom lens unit 260, and 7. number is across throwing The shape of the laser beam that pedestal is radiated as final laser beam of shadow unit 270.
Laser beam is divided by the diffractive optical element 220 2. indicated by number, and the laser beam of segmentation is each passed through coverage structure The pattern-making of part 230,240 and 250, and by passing through by the digital coverage component 230,240 and 250 4. indicated and by number 5. the edge sharpening of execution laser beam is indicated, so that fine laser patterning is possible.In addition, 6. number is saturating across zoom The shape of the laser beam of mirror unit 260, and Zoom lens unit 260 adjusts the distance between lens, allows to adjust figure Case spacing and size.
The method that manufacture shadow mask using laser patterning according to the present invention is described below.
Fig. 5 (a) to Fig. 5 (d) is the side for sequentially illustrating the manufacture shadow mask of first embodiment according to the present invention The view of method, wherein for convenience's sake, Zoom lens unit 260 and projecting cell 270 is not shown.Fig. 6 is to show basis The view of multiple coverage components 230,240 and 250 for manufacturing shadow mask of the method for the first embodiment of the present invention.
Coverage pattern according to first embodiment for manufacturing the shadow mask of the method for shadow mask is vertically logical It crosses and covers opening 231a, 231b and 231c that component 230,240 and 250 is formed.That is, in the first embodiment, having The shadow mask 100 of taper mask pattern 120 is by sending laser beam L by having opening 231a, 231b and 231c (laser It is that beam L passes through the opening and be open there are different sizes) multiple coverage component 230a, 230b and 230c handle pedestal 110 and manufacture.
Mask member 230a, 230b and 230c are described with reference first to Fig. 6.Setting there are three cover component 230a, 230b and 230c, hereinafter referred to as the first mask member 230a, second cover component 230b and third coverage component 230c.
First mask member 230a is primarily used for transmitting laser beam L, and has in the opening for covering component at three For maximum opening (the referred to below as first opening 231a).Second covers component 230b quilt after the first coverage component 230a Opening (the referred to below as second opening for using, and having the first opening 231a for covering component 230a than first small 231b)。
Third mask member 230c is finally used, and has the second opening 231b for covering component 230b than second small Opening (referred to below as third be open 231c).First covers the first of component 230a, 230b and 230c to third to third Opening 231a, 231b and 231c are coaxially formed.
First is less than the laser beam L across diffractive optical element 220 to the region of third opening 231a, 231b and 231c Region.Laser beam L can be made always to radiate with presumptive area, and the region is greater than the first opening 231a.
It is greater than first to third opening 231a, 231b and 231c across the region of the laser beam L of diffractive optical element 220 Region.Therefore, in the laser beam L for passing through diffractive optical element 220, first is passed through to third opening 231a, 231b and 231c Laser beam L motor seat 110 is arrived by Zoom lens unit 260 and projecting cell 270, and from first to third opening 231a, The laser beam L that 231b and 231c advances is blocked from motor seat 110 due to it.If desired, can be according in shade The size of the mask pattern formed on exposure mask is adjusted to by adjusting the gap use between the lens of Zoom lens unit 260 The gap of pedestal 110 and pattern make bombardment with laser beams.
Although having used three coverages component 230a, 240a and 250a in the foregoing description, but the invention is not restricted to this, And can be used two or four or more than coverage component.
First covers component 230a, 230b and 230c to third is made of the material based on chromium (Cr), but the present invention is not It is limited to this, and a variety of materials that can stop laser beam L can be used.
It is illustrated referring to figs. 1 to method of the Fig. 6 to the manufacture shadow mask of first embodiment according to the present invention.
Firstly, preparing pedestal 110 and placing it on rack (stage) 130.It is according to the pedestal 110 of the present embodiment Plate made of metal, for example, abundant steel or stainless steel.
Laser beam across diffractive optical element 200 by Zoom lens unit 260 and is thrown after passing through coverage component Shadow unit 270 arrives the top of motor seat 110.The saturating of Zoom lens unit 260 is adjusted according to the size and shape of mask pattern The gap of mirror.Next, light beam supply unit 200 is operable to outgoing laser beam L, and laser beam L covers structure by first The first opening 231a of part 230a simultaneously arrives motor seat 110 by Zoom lens unit 260 and projecting cell 270.
It is greater than the first hole 231a from the region that diffractive optical element 220 advances to the laser beam L of the first coverage component 230a Region, therefore realize edge sharpening when laser beam L is passed through and covered component, therefore fine laser patterning is possible.Cause This, only passes through swashing for the first opening 231a that the laser beam L of the first coverage component 230a is advanced to from diffractive optical element 220 Light beam L advances to pedestal 110, and the laser beam L for reaching other regions other than the first opening 231a is blocked.
In other words, the region of the laser beam L from diffractive optical element 220 is greater than the first of the first coverage component 230a Be open 231a, but its region is radiated by the laser beam L that the first coverage component 230a is adjusted to correspond to the first opening 231a To pedestal 110 (referring to Fig. 5 (a)).When laser beam L is radiated in the given time with the region for corresponding to the first opening 231a When pedestal 110, the region for the pedestal 110 for radiating laser beam L makes the area of the pedestal 110 of laser beam L radiation by such as disconnecting The reaction of connected structure in domain and be removed in scheduled depth.
Therefore, as shown in Fig. 5 (b), the groove (referred to below as the first groove 121) with predetermined depth is formed.
When forming the first groove 121 on pedestal 110 by the first coverage component 230a, component is covered in removal first 230a, and the second coverage component 230b is placed on above pedestal 110.
Second coverage component 230b is positioned such that the center of the first groove 121 and second covers the second of component 230b The center of opening 231b is aligned on pedestal 110.
Hereafter, as outgoing laser beam L, as shown in Fig. 5 (b), laser beam L covers the of component 230b by second Two opening 231b are sent to pedestal 110.Advance to the laser beam L's of the second coverage component 230b from diffractive optical element 220 Region is greater than the region of the second opening 231b.
Therefore, the second opening that the laser beam L of the second coverage component 230b is advanced to from diffractive optical element 220 is extended only through The laser beam L of 231b advances to pedestal 110, and reaches in addition to the laser beam L in other regions of the second opening 231b is blocked.
That is, the region that laser beam L corresponds to the second opening 231b by the second coverage component 230b is transmitted (referring to Fig. 5 (b)).Laser beam L across the second opening 231b is sent to the first groove 121, and has than the first groove The smaller region in 121 bottom.
When laser beam L is radiated the bottom of the first groove 121 in the given time, pass through such as disconnect engagement structure Reaction and the region of pedestal 110 that laser beam L is radiated is removed at predetermined depth, therefore below the first groove 121 The second groove 122 is formed, as shown in Fig. 5 (c).
When forming the second groove 122 on pedestal 110 by the second coverage component 230b, component is covered in removal second 230, and third coverage component 230b is placed between diffractive optical element 220 and Zoom lens unit 260.
Third covers component 230c and is positioned such that the third of component 230c is covered at the center of the second groove 122 and third The center of opening 231c is aligned on pedestal 110.Next, behaviour does light supply unit 200 with defeated as shown in Fig. 5 (c) Laser beam L and laser beam L are open 231c by the third that third covers component 230c out, and pass through Zoom lens unit 260 Motor seat 110 is arrived with projecting cell 270.
The region for advancing to the laser beam L that third covers component 230c is greater than the region of third opening 231c.Therefore, it only wears It crosses and advances to the laser beam L of the third opening 231c for the laser beam L that third covers component 230c and advance to pedestal 110, and reach The laser beam L in other regions other than third is open 231c is blocked.
Use the region for corresponding to third opening 231cb by width that is, laser beam L covers component 230c by third It penetrates (referring to Fig. 5 (c)).The laser beam L to advance across third opening 231c is sent to the second groove 122, and has than the The smaller region in bottom of two grooves 122.
When laser beam L is sent to the bottom of the second groove 122 in the given time, pass through such as disconnect engagement structure Reaction the region of the pedestal 110 that laser beam L is transmitted, therefore the shape below the second groove 122 are removed at predetermined depth At third groove 123, as shown in Fig. 5 (d).
Therefore, because third groove 123 covers the laser treatment of component 230c in the second groove 122 by using third It is formed below, therefore, as shown in Fig. 5 (d), mask pattern 120 is formed vertically through pedestal 110, so that diameter or interior Diameter reduces with its decline.
Multiple openings are formed in addition, covering in component 230a, 230b and 230c first to third, and pass through diffraction light It learns the laser beam that unit 220 is divided and is each passed through the coverage pattern for covering component, therefore the laser beam divided arrives motor seat simultaneously 110 and form multiple mask patterns 120.In addition, when the size of pedestal 110 is big, it can be by mobile using rack 130 Multiple mask patterns 120 are formed while pedestal 110 in the whole region of pedestal 110 to manufacture shadow mask.
Fig. 7 (a) to Fig. 7 (c) is the side for sequentially illustrating the manufacture shadow mask of second embodiment according to the present invention The view of method.Fig. 8 is to show the coverage component for being used to manufacture shadow mask of the method for second embodiment according to the present invention View.
Phase shift is used using the method for the manufacture shadow mask of the second embodiment according to the present invention of phase-shift mask technology Exposure mask is as coverage component 240.Be well-known method using the patterning of phase-shift mask, by give light phase difference come Use the constructive interference and destructive interference of light.
The coverage pattern of the shadow mask of method according to the second embodiment for manufacture shadow mask is by with multiple The coverage component of phase shifter 241,242 and 243 is formed.That is, the coverage component 240 of second embodiment according to the present invention With being arranged to step-like multiple phase shifters 241,242 and 243 on a coverage component 240.
Phase-shift mask is well known in the art, and herein using any one of various phase-shift masks.
For example, being used as covering the phase-shift mask packet of component 240 in the present invention as shown in Fig. 7 (a) to Fig. 7 (c) It includes and transmits the phase shifter 241,242 and 243 of laser beam L in the main body with presumptive area and in phase shifter 241,242 and 243 outsides are arranged and the hood 244 for the incoming laser beam L that decays.
That is, phase shifter 241,242 and 243 is disposed at some body regions for covering component 240, and move Region around phase device 241,242 and 243 is the region of attenuated laser beam L.
Phase shifter 241,242 and 243 has different regions, and is sequentially arranged in platform in the short transverse of main body Scalariform.In the second embodiment of the present invention, phase shifter 241,242 and 243 is the groove formed in main body.
That is, the coverage component 240 of second embodiment according to the present invention includes: the first phase shifter 241, from master The top of body is formed as groove-like at the first depth A1 and has first area；Second phase shifter 242, from the top of main body Be formed as groove-like at the second depth A2 bigger than the first depth A1 and there is the region (first than the first phase shifter 241 Region A1) small second area；And third phase shifter 243, from the top of main body in the third depth bigger than the second depth Be formed as groove-like at A3 and there is the region smaller than the region (second area) of the second phase shifter 242, wherein hood 244 It is disposed in the outside of the first phase shifter 241 in the left and right region of main body.
The phase of first phase shifter 241, the second phase shifter 242 and third phase shifter 243 is for example moved with π/3, pi/2 and π It is dynamic.Therefore, when covering the laser beam L above component from m and passing through first to third phase shifter 241,242 and 243, phase by Gradually moved.
That is, the phase of laser beam L is between the first phase shifter 241 and the second phase shifter 242 and the second phase shift Continuously change between device 242 and third phase shifter 243.
When the intensity of laser beam changes and moves the first phase shifter 241, the second phase shifter 242 and third phase shifter When 243 phase difference (for example, π/3, pi/2 and π), laser beam is theoretically advanced with step-like distribution or shape, in Fig. 7 (b) Show, but in fact, due to resolution ratio limitation, the not step-like traveling of laser beam advanced, such as Fig. 7 with inclined-plane (c) shown in.
Coverage component 240 with first to third phase shifter 241,242 and 243 can be realized by etching main body.
Main body can be made of the quartz that can be transmitted laser beam L, and first to third phase shifter 241,242 and 243 can be with It is formed in the main body made of quartz, and hood 244 (such as film, film or the block for stopping laser beam L) can be by cloth It sets in main body.Obviously, hood 244 can not be disposed in main body, but in main body, in the first phase shifter 241 It is external.
In a second embodiment for example, first covers structure by machining to third phase shifter 241,242 and 243 The main body of part 240 and be formed as groove-like.However, the invention is not limited thereto, and it can change the film of the phase of laser beam L The top of main body can be disposed in.Based on top on film phase shifter be formed in the height direction it is step-like.
The method of the manufacture shadow mask of second embodiment according to the present invention is referring to figs. 1 to Fig. 3 and Fig. 7 (a) to Fig. 7 (c) it is described.For convenience's sake, Zoom lens unit 260 and projecting cell 270 do not show in Fig. 7 (a) into Fig. 7 (c) Out.
Firstly, preparing pedestal 110 and placing it on rack 130, coverage component 240 according to the second embodiment is put It sets between diffractive optical element 220 and Zoom lens unit 260.Next, being exported by operation light beam supply unit 220 Laser beam L, and laser beam L is advanced to and is covered component 240.
In laser beam L, it is radiated first to the laser beam L of third phase shifter 241,242 and 243 and passes through zoom lens Unit 260 and projecting cell 270, which advance to pedestal 110 and being radiated, to be covered the laser beam L of hood 244 of component and is hindered It keeps off and pedestal 110 cannot be advanced to.Gradually and continuously pass through the from the laser beam L that radiates above component 240 is covered One to third phase shifter 241,242 and 243 phase shifts, therefore its inner diameter or width to the bottom of pedestal 110 with being gradually reduced Mask pattern is formed, as shown in Fig. 7 (b).
Fig. 9 (a) and Fig. 9 (b) is the side for sequentially illustrating the manufacture shadow mask of third embodiment according to the present invention The view of method.Figure 10 (a) and Figure 10 (b) is to show the screening for being used to manufacture shadow mask of third embodiment according to the present invention Cover the view of component.For convenience's sake, Zoom lens unit 260 and projecting cell 270 do not show in Fig. 9 (a) and Fig. 9 (b) Out.
As illustrated in the diagram, the method for manufacture shadow mask according to the third embodiment uses slit mask as coverage structure Part.As shown in Figure 10 (a) and Figure 10 (b), slit mask has multiple light shield layer 252a, 252b and 253c, multiple screening Photosphere 252a, 252b and 253c stop to transmit in the main body 251 of laser beam L or its internal laser beam L, wherein light shield layer 252a, 252b and 253c have different width, so that the intensity for being radiated the laser beam L of pedestal 110 is different.
In order to manufacture in an embodiment of the present invention have with its decline and internal diameter reduce inclined-plane or based on rectangular The shadow mask of pyramid pattern, coverage component 250 according to the third embodiment have main body 251 on be separated from each other and Light beam L passes through the pattern of light shield layer 252a, 252b and the 252c in region spaced apart.Light shield layer 252a, 252b and 252c are in master It is formed on body 251, so that their width reduces from edge to center with it, in Figure 10 (a) and Figure 10 (b).
In other words, it forms coverage component 250 and makes light shield layer (one of 252a, 252b and 252c) and another light shield layer Gap between (in 252a, 252b and 252c another) reduces from edge to center with it.
When laser beam L is radiated from top covers component 250, base region is radiated below wide transmission region The intensity of laser beam L be greater than the intensity for being radiated the laser beam L in region of pedestal 110 below narrow transmission region.? In three embodiments, due to transmission region as it increases from edge to center, so be radiated the laser beam L of pedestal 110 Intensity increases from edge to center with it.
Referring to Fig. 1 to Fig. 3 and Fig. 9 (a) and Fig. 9 (b) to the manufacture shade of third embodiment according to the present invention The method of exposure mask is described.
Firstly, prepare pedestal 110 and to place it on rack 130, and by coverage component according to the third embodiment 250 are placed between diffractive optical element 220 and Zoom lens unit 260.Next, passing through operation light beam supply unit 220 Carry out outgoing laser beam L and laser beam L is advanced to and covered component 250.
In laser beam L, it is radiated and covers the first to third transmission region 253a, 253b and 253c of component 250 Laser beam L is advanced to pedestal 110 and be radiated by Zoom lens unit 260 and projecting cell 270 covers component 250 The laser beam L of light shield layer 252a is blocked and cannot advance to pedestal 110.
Pedestal 110 is transmitted to by second transmission region 253b more farther than the first transmission region 253a inside main body 251 The intensity of laser beam L be greater than the intensity that the laser beam L of pedestal 110 is transmitted to by the first transmission region 253a of edge, And swashing for pedestal 110 is transmitted to by third transmission region 253c more farther than the second transmission region 253b inside main body 251 The intensity of light beam L is greater than the intensity of the laser beam L by the second transmission region 253b transmission.
By being changed by the intensity of the laser beam L in the region, as shown in Fig. 9 (b), obtain its inner diameter or width with Its mask pattern reduced to the bottom of pedestal 110.
According to the method for according to the present invention first to 3rd embodiment manufacture shadow mask, pass through laser beam radiation Form mask pattern on the base and form shadow mask, thus such as compared with the method for using the relevant technologies of photoetching process and Speech, can simplify manufacturing process.Therefore, such as with it is in the prior art manufacture shadow mask method in comparison, it is possible to reduce Manufacture the time that shadow mask is spent.
In addition, needing various devices and equipment using the method for photolithographic fabrication shadow mask in the prior art, including it is used for Apply coating machine, heater for heating, exposure device, developing cell, etching unit and the band list of photoresist Member.However, the method for manufacture shadow mask according to the present invention, can be used the optics for capableing of laser beam radiation and coverage component System manufactures shadow mask, and the equipment for being accordingly used in manufacture shadow mask is simple compared with prior art, and because This can reduce maintenance cost.
Further, since in the prior art by being lithographically formed the fine pattern with institute's phase cone angle, so must be by base The thickness of seat is reduced to 20 μm, and is difficult to handle this thin shadow mask.
However, according to the present invention, due on the base using not being photoetching but laser and mask patterning formation pattern, So thicker shadow mask may be implemented, therefore shadow mask and minimum are easily processed when forming Thinfilm pattern on substrate Change or prevent the recess of shadow mask.
In addition, as being processed to manufacturing shadow mask without covering component to pedestal with by the way that laser is used only In comparison method, can simply form cone shaped pattern.Further, since the laser of nanosecond or femtosecond can be used, institute With when by laser beam radiation to process pedestal, can make due to heat minimization caused by the reacting of pedestal, can be with Prevent the bad pattern due to caused by heat localization.Further, since having used the light irradiation apparatus using diffraction optical system, institute Multiple mask patterns can be formed simultaneously on the base, therefore productivity can be improved.

Claims (25)

1. a kind of device for manufacturing the shadow mask with fine mask pattern using laser patterning, described device include:
Light beam supply unit supplies laser beam；
Beam control unit controls the positions and dimensions of the laser beam from the light beam supply unit；
The laser beam is divided into multiple laser beams with uniform strength distribution by diffractive optical element；
Component is covered, has and covers pattern, the coverage pattern corresponds respectively to the exposure mask for passing through divided laser beam Pattern, and the edge covered component and cover the laser beam；
Zoom lens unit adjusts pattern spacing and size across the laser beam for covering component；And
Projecting cell is sent to pedestal with the laser beam that scheduled minification passes through the Zoom lens unit,
Wherein the coverage component includes multiple coverage components, is configured such that covering pattern has different width, and And the coverage pattern with small width is arranged to close to the pedestal, so that laser beam gradually passes through the coverage pattern.
2. the apparatus according to claim 1, wherein the laser beam from the light beam supply unit is for processing metal The pulse laser beam with pulse width between tens femtoseconds and several hundred nanoseconds.
3. the apparatus according to claim 1, wherein the light beam supply unit includes laser and is disposed in described sharp Multiple reflecting mirrors of the beam control unit are sent to around the output port of light device and by laser beam.
4. the apparatus according to claim 1, wherein the beam control unit includes the position of automatic compensation laser beam The optical beam expander of beamstability module and adjustment laser beam size.
5. device according to claim 4 senses the position of laser beam wherein the beamstability module includes sensor Set the position for compensating laser beam with multiple reflecting mirrors on motor and automatically.
6. the apparatus according to claim 1, wherein the diffractive optical element includes: diffraction optical element comprising light Beam reshaper and beam splitter；And focusing lens unit, it sends the laser beam of segmentation to focus the coverage component of side.
7. device according to claim 6, wherein laser beam is divided into one by the beam splitter of the diffraction optical element To 500 laser beams, and the gap of divided laser beam is the size of the pattern formed by the diffraction optical element 0.1 to 50 times.
8. device according to claim 7, wherein according to the size of the mask pattern formed on the pedestal by described Projecting cell determines the size of the pattern made by the diffraction optical element with 1 to 50 times of optical reduction rate.
9. the apparatus according to claim 1, wherein the coverage pattern is coaxially arranged.
10. the apparatus according to claim 1, wherein the component of covering includes with the corresponding multiple coverages for covering pattern Component, wherein
The pattern of covering forms vertically through the presumptive area for covering component and has opening for different in width Mouthful, and laser beam is transported through the coverage component for several times.
11. the apparatus according to claim 1, wherein the zoom lens have ± 70% zooming range.
12. device according to any one of claim 1 to 11, wherein form its internal diameter on the pedestal and subtract downwards Small mask pattern.
13. a kind of device for manufacturing the shadow mask with fine mask pattern using laser patterning, described device include:
Light beam supply unit supplies laser beam；
Beam control unit controls the positions and dimensions of the laser beam from the light beam supply unit；
The laser beam is divided into multiple laser beams with uniform strength distribution by diffractive optical element；
Component is covered, has and covers pattern, the coverage pattern corresponds respectively to the exposure mask for passing through divided laser beam Pattern, and the edge covered component and cover the laser beam；
Zoom lens unit adjusts pattern spacing and size across the laser beam for covering component；And
Projecting cell is sent to pedestal with the laser beam that scheduled minification passes through the Zoom lens unit,
Wherein the coverage component includes multiple coverage components, and the multiple component of covering is that have multiple phase shifts for covering pattern Exposure mask, the multiple coverage pattern have different in width, and can move the phase of laser beam with decay intensity, and
Laser beam is transmitted through following coverage pattern: the phase can be moved by the coverage pattern.
14. device according to claim 13, wherein form the exposure mask figure that its internal diameter reduces downwards on the pedestal Case.
15. a kind of device for manufacturing the shadow mask with fine mask pattern using laser patterning, described device include:
Light beam supply unit supplies laser beam；
Beam control unit controls the positions and dimensions of the laser beam from the light beam supply unit；
The laser beam is divided into multiple laser beams with uniform strength distribution by diffractive optical element；
Component is covered, has and covers pattern, the coverage pattern corresponds respectively to the exposure mask for passing through divided laser beam Pattern, and the edge covered component and cover the laser beam；
Zoom lens unit adjusts pattern spacing and size across the laser beam for covering component；And
Projecting cell is sent to pedestal with the laser beam that scheduled minification passes through the Zoom lens unit,
Wherein the coverage component is slit mask, has the main body, on the body in the width direction of transmission laser beam Multiple light shield layers for being separated from each other and the multiple transmission regions for being limited between the light shield layer and transmitting laser beam,
The light shield layer reduces on the width from outside towards the center of the main body,
The transmission region increases on the width from the outside towards the center of the main body, and
The coverage component that laser beam is radiated as slit mask from top, so that being radiated the pedestal under relatively wide transmission region The intensity of the laser beam in region is greater than the intensity of the laser beam for the base region being radiated under relatively narrow transmission region.
16. device according to claim 15, wherein form the exposure mask figure that its internal diameter reduces downwards on the pedestal Case.
17. a kind of method for manufacturing shadow mask using laser patterning, which comprises
It will be placed on the base with the coverage component for covering pattern corresponding with institute's phase mask pattern；And
By by bombardment with laser beams to the coverage component and being used from top across the laser beam for covering component to institute Pedestal is stated to be processed and form pattern corresponding with the coverage pattern on the pedestal,
Which provide multiple coverage patterns with different in width, and arrange have the coverage pattern of small width close to described Pedestal advances to the base so that being radiated the laser beam for covering component from top and passing sequentially through the coverage pattern Seat.
18. according to the method for claim 17, wherein the coverage pattern is coaxially arranged.
19. according to the method for claim 18, wherein the component of covering includes with the corresponding multiple screenings for covering pattern Component is covered,
The pattern of covering forms vertically through the presumptive area for covering component and has opening for different in width Mouthful, and
Pass through the coverage component including laser beam radiation for several times from top by bombardment with laser beams to the process for covering component Process.
20. according to the method for claim 19, wherein working as number during transmitting laser beam by the coverage component When the process of secondary transmission laser beam continues process to the end, laser beam is transmitted through the coverage component with narrow opening pattern.
21. according to the method for claim 18, wherein the component of covering is that have multiple phase-shift masks for covering pattern, The multiple coverage pattern has different in width, and can move the phase of laser beam at different angles, and
From top by bombardment with laser beams to the coverage component during, when from top by bombardment with laser beams to as described When the coverage component of phase-shift mask, laser beam is transmitted through following coverage pattern: the phase can be by the coverage pattern And it is moved.
22. there is transmission laser beam according to the method for claim 19, wherein the coverage component is slit mask It main body, the multiple light shield layers being separated from each other in the width direction on the body and is limited between the light shield layer And multiple transmission regions of laser beam are transmitted,
The light shield layer reduces on the width from outside towards the center of the main body,
The transmission region increases on the width from the outside towards the center of the main body, and
During by bombardment with laser beams to the coverage component, the laser beam is radiated from top as the slit The coverage component of exposure mask, so that the intensity of the laser beam for the base region being radiated under relatively wide transmission region is greater than by spoke It is mapped to the intensity of the laser beam of the base region under relatively narrow transmission region.
23. method described in any one of 7 to 22 according to claim 1, by the way that laser beam is transported through the coverage component To form the mask pattern that its internal diameter reduces downwards on the pedestal.
24. method described in any one of 7 to 22 according to claim 1, wherein by moving horizontally the pedestal, in entire base The multiple mask patterns being separated from each other are formed on seat.
25. method described in any one of 7 to 22 according to claim 1, wherein the pedestal includes metal.
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CN107427964A (en) 2017-12-01
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