KR20180012388A - Manufacturing method of shadow mask using hybrid processing - Google Patents

Abstract

The present invention relates to a manufacturing method of a shadow mask in which a mask pattern is formed and a shadow mask manufactured thereby. The method comprises: a wet etching step of forming a wet etching pattern by performing wet etching on the upper side of a base; and a laser processing step of forming a continuous laser processing pattern on the wet etching pattern by performing laser processing on the upper side of the base in which the wet etching pattern is formed or on the lower side of the base. By using a combination of the wet etching and the laser processing, a decrease in labor productivity due to a conventional laser processing can be solved and a high-quality shadow mask by wet etching can be provided.

Description

[0001] The present invention relates to a method of manufacturing a shadow mask using a combined processing method,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a metal shadow mask and a shadow mask, and more particularly, to a method of manufacturing a metal shadow mask and a shadow mask using a wet etching method and a laser processing method, A method of manufacturing a shadow mask, and a shadow mask manufactured thereby.

Generally, a metal mask is used for a vacuum deposition process and the like in the production of an organic EL or an organic semiconductor device.

Such a metal mask has a three-dimensional hole structure of a plurality of circular holes or tapered shapes. The metal mask has a three-dimensional hole structure in which a mask is aligned on a substrate and a light emitting layer of a desired pattern is deposited on a specific region on the substrate to manufacture a semiconductor device such as an organic EL will be.

As a conventional method of manufacturing a metal mask, there is a method of manufacturing a shadow mask by chemical wet etching as described in U.S. Pat. Nos. 5,348,825 and 5,552,662, and a shadow mask which is applied at present in the industrial field is manufactured by this method.

The above-described conventional method will be briefly described with reference to FIG.

1. Resist coated: The photoresist (2) is coated on both sides of the metal film (1).

2. Pattern coated: The photoresist layer (2) is selectively exposed using a pattern of a glass mask (or quartz mask) (3).

3. Developed: Once the pattern of the glass mask (or Quartz mask) 3 is transferred onto the photoresist 2, the glass mask 3 used to form it is removed and a development process is performed Thereby selectively removing the photoresist.

4. 1st etched: Then, a part of the metal film is removed by a wet etching process on the top surface of the patterned photoresist by the etching solution on the photoresist-removed portion (photoresist opening portion).

5. Filled: Fill with the anti-etching packing material on the top surface where the metal film is partially removed by wet etching. The filling of the anti-etching packing material is for preserving the shape of the upper surface of the metal film formed by the first etching at the time of performing etching for the lower surface.

6. 2nd etched: Etching is performed on the lower surface of the metal film (1).

7. Removed: When the anti-etching packing material and the photoresist are removed, a metal shadow mask is finally produced.

The above process lists typical procedures for manufacturing a metal shadow mask by wet etching, and various modified processes based on this procedure have been developed and applied. For example, the "5. Filled" process may be omitted, or both sides may be etched at the same time. However, it is similar in general that a metal mask is made through the chemical wet etching process described in FIG.

In general, wet etching has a characteristic of being isotropic as shown in Fig. That is, since the etchant from the opening of the photoresist acts with the same strength in all directions and removes the metal material, the cross-sectional shape of the metal material left after etching is formed in a semicircular shape as shown in Fig. Thus, the finally formed metal mask will include a very thin opening around the opening (see red marking).

As described above, the thin thickness around the opening serves as a disadvantage in securing the size and shape of the opening precisely and stably.

For this reason, a general metal mask performs both etching on both sides as shown in FIG. 3 without performing wet etching only on one surface (upper surface or lower surface) of the metal film. Wet etching on both sides is performed in various ways as described in the prior arts US5348825, US5552662, and the like.

These schemes form intersecting lines (intersections in the cross-section) where the faces constituted by etching to the upper face and the faces constituted by etching to the lower face meet. Further, by performing the etching on either side with a weak strength, it is possible to realize a metal mask including a small taper shape (32 in FIG. 3). Such a tapered shape makes it possible to secure dimensional stability and shape stability of the opening portion. For these reasons, prior studies of the wet etch scheme have claimed that the height of the undercut (t in FIG. 3) is 30% to 40% of the total thickness (T).

However, since such a tapered shape is formed by the isotropic nature of the wet etching, it is inevitably formed only in the form of an undercut.

This is revealed in the process of depositing the organic light emitting material on the substrate of the display device using the metal mask made therefrom. In the process of depositing the organic light emitting material through the opening of the metal mask, the under-cut ) Serves to prevent the organic luminescent material from being uniformly deposited on the substrate.

That is, the organic light emitting material is gradually deposited at the position of the substrate corresponding to the under-cut, thereby making the boundary of the deposited organic light emitting material unclear, and consequently the performance of the display device manufactured through this process It will cause deterioration.

Meanwhile, up to 300 ppi is known to be possible by wet etching. However, in order to realize a resolution higher than QHD (about 500 ppi level) or higher UHD (about 800 ppi), it is difficult to implement the wet etching method alone.

 FIG. 4 is a graph for explaining the isotropic shape of the wet etching. Equation (1) is obtained for the correlation between each shape factor (A, B, D, E, T, pitch, , (2), and (3), respectively.

FIG. 4 is merely to illustrate that the wet etching method has a limitation in realizing a high resolution through the relationship of these shape factors.

In general, the higher the resolution, the smaller the value of the pitch is required in Fig. 4, and the smaller the value of width (B), the smaller the value. According to equation (3), a smaller value of PR width (A) or depth (D) is required for the width (B) to be smaller.

However, PR width (A) can not be infinitely small. This is because a very small PR width value is generally limited due to the feature to be formed by the exposure process, and even if the PR width value is implemented, it causes deterioration of the etching performance.

the depth (D) value is also limited to a small value. This is because the size of the undercut increases as the depth (D) is reduced to a smaller value even if the double-sided etching method is adopted, which prevents the organic light emitting material from being uniformly deposited on the substrate. However, reducing the thickness (T) of the metal mask is also limited in terms of handling of the metal sheet.

Another reason for the difficulty in implementing a high resolution by wet etching alone can be found in the planar shape of the microstructure.

As shown in FIG. 5, since the actual shape processed is a bowl shape in 3D, the four corners are not sharply angled on the plane view, round shape. This feature makes it difficult to cope with the demand for high resolution display applications, particularly QHD or UHD, where corner sharp rectangular or polygonal deposition areas are required.

Therefore, it is difficult to realize a resolution of QHD (about 500 ppi) or more and UHD (about 800 ppi) or more due to the correlation and limitations of the shape factors only by the conventional wet etching method.

In recent years, the manufacture of a metal shadow mask using a very short pulse laser has been attempted. As a typical technique, a 10-2013- 0037482 and 10-2015-0029414, and the applicant of the present invention has also filed an application related thereto (Application No. (10-2014-0182140, 10-2015-0036810).

As shown in Fig. 6, the basic process of the metal shadow mask by laser is described,

A first irradiation step of irradiating a substrate with a laser beam while transferring a laser beam along a first closed curve provided corresponding to the shape of the mask hole;

2. A second irradiation step of irradiating the substrate with a laser beam while transferring the laser beam along a second closed curve which is disposed inside the first closed curve and has a smaller internal area than the first closed curve, . Also,

3. A method for irradiating a laser beam having a second energy smaller than the first energy to a position where a mask hole is formed on a substrate, And a second irradiation step of irradiating the same to the same position.

In order to increase the precision of a metal mask to be processed, a method of manufacturing a metal mask using such a laser is a method in which a plurality of pulses are accumulated in a low intensity intensity condition using a primary pulse laser to progressively remove or process a metal material will be.

The great advantage of this method is that it can specify the intensity or energy distribution of the laser irradiated on the metal material by constructing a specific optical system or by changing the intensity of the laser or the modulation of the pulse.

For example, the optical system can be configured to have a specific energy distribution, and the relative movement of the laser and the substrate can be controlled, thereby making it possible to manufacture a metal mask having an appropriate taper-like shape without undercut or the like (see FIG.

However, one of the biggest limitations of this approach is the difficulty in securing enough productivity to be used in the actual industrial field.

In other words, laser processing is performed by continuously applying energy to the metal material from the laser to the pulse train, inducing the progressive metal to be removed from the surface of the material. At this time, When applied, the machining speed (amount of material to be removed) is increased, but the metal material accumulates without releasing sufficient heat, resulting in degraded machining quality.

In addition to this, it also causes burrs on the opposite side of the machined surface to which a high energy pulse is applied. The energy pulse from the laser is applied to the metal material to advance the progressive machining and to induce the penetrating shape from it. In the very thin state where the pre-penetration metal material is almost removed, the impact caused by the high- Because it acts as a protruding force. In the case of invar materials, the projecting height of these protruding burrs can range from a few microns to a few tens of microns based on the backside of the process.

When an organic material is deposited using a shadow mask including a protruding burr formed on the rear surface of the processing, it may cause glass damage, and the shadow mask may not be brought into contact with the shadow mask completely between the shadow mask and the glass, Which is a cause of deteriorating the vapor deposition property.

Ultimately, in order to ensure good machining quality, a small amount of machining over several shots must be taken with minimal energy required for machining, which makes it difficult to obtain sufficient productivity.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide a method of manufacturing a shadow mask using a combined processing method in which a mask pattern composed of a laser processing pattern and a wet etching pattern is implemented using a combination of a wet etching method and a laser processing method The object of the present invention is to provide a shadow mask manufactured thereby.

According to an aspect of the present invention, there is provided a method of manufacturing a shadow mask having a mask pattern formed thereon, the method comprising: a wet etching step of performing wet etching on the upper side of the base to form a wet etching pattern; And a laser machining step of performing laser processing on the lower side to form a laser machining pattern continuous to the wet etching pattern, wherein the laser machining step is performed by the wet etching step from 95% to 50% Forming a wet etching pattern on the surface of the substrate, and forming a laser machining pattern by the laser machining step with the remaining thickness; and a shadow mask manufactured by the method.

In the laser processing step, a masking portion having a masking pattern corresponding to the mask pattern of the shadow mask to be manufactured is formed on the base, and the laser beam is irradiated on the masking portion.

Here, a plurality of the masking portions may be provided, and masking patterns having different widths may be formed in the respective masking portions, and the step of irradiating the laser beam on the masking portions may include the steps of: And a plurality of laser beam irradiation processes for irradiating the laser beam on the upper side of the masking portion.

In the step of irradiating the laser beam using each of the plurality of masking portions, a masking portion having an opening-type masking pattern having a narrower width toward the last laser beam irradiation step among the plurality of laser beam irradiation steps is used It is preferable to irradiate the laser beam.

In addition, the masking portion may have a masking pattern formed of a photoresist by a photolithography process on the base, and the step of irradiating the laser beam on the masking portion may include removing the photoresist in the masking pattern of the masking portion It is preferable to irradiate the laser beam with a laser beam.

The masking unit may be a phase shifter mask (PSM) having a plurality of masking patterns having different widths and capable of phase-shifting the laser beam at different angles. In the process of irradiating the laser beam at the upper side of the masking unit It is preferable to irradiate a laser beam on the masking portion in the form of the phase shift mask (PSM), and irradiate the laser beam onto the base so as to pass the respective masking patterns capable of performing phase shift in each of the laser beams.

The masking portion may include a body capable of transmitting a laser beam, a plurality of light shielding films formed so as to be spaced apart from each other in the width direction on the body, and a plurality of transmissive regions through which the laser beam can pass, A masking pattern in the form of a slit is formed so that the width of the light shielding film becomes thinner toward the center of the body from the outer direction to the width of the transparent region from the outer direction toward the center of the body, In the process of irradiating a laser beam on the upper side of the masking portion, a laser beam is irradiated on the masking portion in the form of a slit mask to irradiate a base region corresponding to the lower side of the relatively wide transmission region with a laser When the intensity of the beam is irradiated to the base region corresponding to the lower side of the transmission region having a relatively narrow width To research to three compared to the intensity of the laser beam are preferred.

The laser processing step may include a first step of setting a unit processing area on the base, a step of moving the laser beam along a first scan path starting from a boundary of the unit processing area, A second step of processing the laser processing pattern included in the unit processing area until reaching the other boundary of the unit processing area; and a second step of switching the direction of the laser beam to the next step, A third step of shifting the laser beam by a step pitch to move to a second scan path and repeating the second and third steps so that when the movement of the laser beam along the nth scan path is completed, And a fourth step in which processing is performed.

Here, in the shadow mask manufacturing method using the complex machining method, it is preferable to set the machining depth corresponding to each scan path.

It is also preferable to set a plurality of energy regions on the laser processing pattern region included in the unit processing region and to set the processing depth by setting the energy accumulation distribution for each energy region to a sequential intensity.

It is preferable that the laser machining pattern by the laser machining is formed so that the inner diameter becomes narrower from the machined surface on the base.

Preferably, the wet etching step is performed by forming a photoresist pattern for forming the wet etching pattern on the upper side of the base, and wet etching the base along the removed portion of the photoresist.

Further, it is preferable that the laser processing step is performed in the same or opposite direction as the wet etching direction.

In addition, it is preferable that the laser machining pattern by the laser machining is processed in the same or opposite direction as the wet etching direction and continuously formed in the wet etching pattern.

It is also preferable to form the wet etching pattern by the wet etching step to a thickness of 95% to 50% with respect to the entire thickness of the base, and to form the laser processing pattern by the laser processing step with the remaining thickness.

When the laser machining pattern is formed so as to have a narrow inner diameter from the machined surface on the base, it is preferable to form the taper angle within the range of 30 to 90 degrees.

In addition, it is preferable that the height of the protruding burr is 1 占 퐉 or less on the back surface of the laser processing pattern by the laser processing step.

The present invention solves the problem of productivity deterioration due to the conventional laser machining process by using wet etching and laser machining in combination to produce a shadow mask and can provide a high quality shadow mask by wet etching .

Further, since the approximate shape of the metal mask is constituted by the wet etching, the removal amount of the metal material to be removed in the subsequent processing by the laser is very small, so that the number of laser pulses Therefore, the thermal accumulation effect can be significantly reduced as compared with the conventional method (the entire metal mask is processed by a laser), thereby providing a high-quality shadow mask.

Further, such low-energy machining can minimize the size of the protruding burr on the back surface of the processing, and it is advantageous that no protruding bur is formed at all.

In addition, by a complex processing method implemented by wet etching and laser processing, the problem of under-cut due to the isotropic nature of the conventional wet etching is solved, and the gradual deposition of the organic light emitting material deposited on the substrate Thereby improving the performance of the display device by clarifying the boundary of the deposited organic luminescent material.

In addition, the QHD (about 500 ppi level) or more UHD (about 500 ppi level) is not limited to the limit of the shape factors for mask pattern formation by the conventional wet etching method by a complex processing method implemented by wet etching and laser processing 800 ppi) can be realized.

1 is a schematic diagram of a conventional shadow mask manufacturing method by chemical wet etching;
2 is a schematic diagram of a shadow mask produced by conventional wet etching;
3 is a schematic diagram of a shadow mask produced by conventional double-sided wet etching.
Figure 4 is a graph showing the relationship between isotropic shapes of conventional wet etching with respect to the relationship between the respective factors (A, B, D, E, T, pitch, and Etch factors) , (2), and (3)
Fig. 5 is a plan view showing isotropy of a conventional shadow mask having wet etching; Fig.
Fig. 6 is a schematic view of a conventional method of manufacturing a shadow mask by laser processing. Fig.
Figure 7 is a photograph of a shadow mask formed by conventional laser machining.
8 is a schematic diagram of a method of manufacturing a shadow mask according to an embodiment of the present invention.
9 is a schematic diagram of a method of manufacturing a shadow mask according to another embodiment of the present invention.
10 to 15 are schematic diagrams of a laser processing method according to various embodiments of the present invention.
16 to 22 are schematic diagrams of a laser processing method according to various embodiments of the present invention.
23 is a schematic view showing a taper angle (a) of an opening according to an embodiment of the present invention;

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a metal shadow mask which can be used in a vacuum deposition process in the production of an organic EL or an organic semiconductor device, And a method of manufacturing a shadow mask in which a mask pattern made of a wet etching pattern is implemented.

This makes it possible to solve the problem of productivity deterioration due to the conventional laser machining process and to provide a high-quality shadow mask by a combination of wet etching processes.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. FIG. 8 is a schematic view of a method of manufacturing a shadow mask according to an embodiment of the present invention, FIG. 9 is a schematic view of a method of manufacturing a shadow mask according to another embodiment of the present invention, FIG. 23 is a schematic view showing a taper angle (a) of an opening according to an embodiment of the present invention. FIG.

8 and 9, a method of manufacturing a shadow mask using a combined processing method according to the present invention is a method of manufacturing a shadow mask in which a mask pattern is formed, wherein wet etching is performed on the upper side of the base 110 A wet etching step of forming a wet etching pattern 120 and a laser processing pattern 130 continuous to the wet etching pattern 120 by performing laser processing on the upper side or the lower side of the base on which the wet etching pattern 120 is formed, And a laser processing step of forming a laser beam.

That is, the present invention seeks to manufacture a shadow mask in which a mask pattern embodied by the wet etching pattern 120 and the laser processing pattern 130 is formed.

Here, the plurality of mask patterns formed on the shadow mask correspond to the thin film pattern to be deposited on the substrate, which is the object to be vaporized, and the mask pattern is a region through which the deposition material passes, and a plurality of masks The region excluding the region where the pattern is formed is a blocking region through which the deposition material does not pass.

That is, the shadow mask is formed of a plurality of mask patterns which are spaced apart from each other on a blocking region, which is a region for blocking the raw material from passing therethrough, and a plurality of mask patterns through which the raw material can pass. As described above, The shape or arrangement of the shadow mask is a pattern of the shadow mask.

The present invention relates to a method for manufacturing a shadow mask having such a mask pattern, and a mask pattern comprising a wet etching pattern by wet etching and a laser processing pattern by laser machining using a combination of a wet etching method and a laser processing method And to fabricate an implemented shadow mask.

FIG. 8 illustrates a method of manufacturing a shadow mask according to an embodiment of the present invention. A wet etching is performed on the base 110 (upper surface of the base) to form a wet etching pattern A laser beam L is irradiated on the upper side of the base 110 on which the wet etching pattern 120 is formed so that the wet etching pattern 120 is continuously formed on the base 110, Laser processing pattern 130 is formed.

That is, in the wet etching method, wet etching is not performed on both sides of the base in order to realize a higher resolution metal mask, and after performing etching on one side as shown in FIG. 8, In order to precisely form the opening, laser processing is additionally performed on the opening.

9 illustrates a method of manufacturing a shadow mask according to another embodiment of the present invention. A wet etching is performed on the base 110 (upper surface of the base) to form a wet etching pattern The base 110 is irradiated with a laser beam L at a lower side of the base 110 on which the wet etching pattern 120 is formed so that the wet etching pattern 120 is continuously Laser processing pattern 130 is formed.

That is, after the etching of one side of the base is performed, the other side may be further subjected to laser processing to the openings, thereby ensuring dimensional stability and shape stability of the openings.

In this case, the shape of the energy distribution of the applied laser is approximated to a flat-top shape by using an appropriate optical system, thereby minimizing the undercut shape. As a result, the organic light emitting material can be uniformly deposited on the substrate in the process of deposition . An advantage of this method is that it is possible to perform machining on the uncoated side of the photoresist when machining with a laser is performed.

Further, in the case of performing both wet etching on both sides of the base, it is possible to locally remove the undercut shape, which can be inherently formed through such double-side etching, locally using a laser, and to form a precise opening.

An advantage of this method is that since the approximate shape of the metal mask is already formed through the wet etching, the removal amount of the metal material to be removed in the subsequent processing by the laser is very small.

This makes it possible to reduce the number of laser pulses applied to the metal material, which is advantageous in that the heat accumulation effect is significantly reduced compared with the conventional method (the entire metal mask is processed by the laser).

As a result, it becomes possible to manufacture a metal mask composed of fine structures including fine openings.

The wet etching step according to the present invention includes forming a photoresist pattern for forming the wet etching pattern 120 on the base 110 and wet etching the base 110 along the removed portion Thereby forming a wet etching pattern 120. [

8, the laser processing pattern 130 to be described later is processed in the same direction as the wet etching direction and continuously formed in the wet etching pattern 120, or is formed in the wet etching direction And may be continuously formed in the wet etch pattern 120. [0034] FIG.

In this case, the thickness t of the laser processing pattern 130 by laser machining may be set to 40% or less with respect to the total thickness of the base 110, and this shape may be the size and shape of the opening portion of the shadow mask So that the stability can be ensured.

8, the laser processing step may be performed in the same direction as the wet etching direction (upper surface of the base-> upper surface of the base) as shown in FIG. 8, or in a direction opposite to the wet etching direction , The laser processing pattern 130 is formed by laser machining after the wet etching method as required, as shown in FIG.

In the present invention, as shown in Figs. 10 to 15 and Figs. 16 to 22, examples of various laser processing methods are shown. In particular, the laser processing pattern 120 has an inner diameter A suitable method is suggested in the case of narrowing and tapering formation.

The invention In the embodiment  The laser processing step according to claim 1, Shadow  Corresponding to the mask pattern of the mask The masking pattern  Prepared The masking portion 200  And Masking portion A laser beam is irradiated on the upper side of the substrate 200.

FIG. 10 is a view for explaining a plurality of masking portions 230, 240, and 250 for forming a laser processing pattern 120 by laser processing according to the first embodiment of the present invention.

A plurality of masking parts 230, 240 and 250 are formed on the masking parts 230, 240 and 250. Each of the masking parts 230, The process of irradiating the laser beam L on the masking parts 230, 240 and 250 using the plurality of masking parts 230, Wherein the step of irradiating the laser beam L by using each of the plurality of masking parts 230, 240 and 250 includes a step of irradiating the laser beam L, The laser beam is irradiated using masking portions 230, 240, and 250 having a masking pattern of an opening type whose width is narrower toward the last laser beam (L) irradiation step.

That is, the masking pattern of the shadow mask for the method of manufacturing the shadow mask according to the first embodiment is in the form of openings 231a, 231b, 231c penetrating the masking portions 230, 240, 250 in the up and down direction. That is, in the first embodiment, a plurality of masking portions 230a, 230b, and 231c having openings 231a, 231b, and 231c through which the laser beam L passes, 230c to transmit the laser beam L to fabricate the base 110 to produce a shadow mask provided with a laser processing pattern 120 having a warp.

First, referring to Fig. 11, a plurality of masking portions 230a, 230b, and 230c will be described. The masking portions 230a, 230b and 230c are provided in three, for example, the first masking portion 230a, the second masking portion 230b and the third masking portion 230c.

Here, the first masking portion 230a is first used for irradiating the laser beam L, and the area of the opening (hereinafter referred to as the first opening 231a) of the three masking portions is largest. The second masking portion 230b is used next to the first masking portion 230a and has an opening with a smaller area than the first opening 231a of the first masking portion 230a .

The third masking portion 230c is finally used and has an opening with a smaller area than the second opening 231b of the second masking portion 230b (hereinafter referred to as a third opening 231c). The first through third openings 231a, 231b, and 231c provided in the first through third masking portions 230a through 230c are provided to have a concentric axis.

The areas of the first to third openings 231a, 231b, and 231c are smaller than the area of the laser beam L passing through the diffractive optical unit 220. [ At this time, the laser beam L can always be irradiated with the same area, and its area is larger than that of the first opening 231a.

Thus, the area of the laser beam L is larger than the areas of the first to third openings 231a, 231b, and 231c. The laser beam L passing through the first through third openings 231a, 231b and 231c out of the laser beam L irradiated from the diffraction optical section passes through the zoom lens section and the projection section, And the laser beam L directed to the outer regions of the first through third openings 231a, 231b, and 231c is not irradiated to the base 110 because the movement thereof is shielded or shielded. According to the necessity, the distance between the lenses constituting the zoom lens part can be adjusted according to the size of the mask pattern formed on the shadow mask, thereby adjusting the interval and pattern of the laser beams to irradiate the base.

Although three masking portions 230a, 230b, and 230c are used in the above description, the present invention is not limited thereto, and two or four or more masking portions may be used.

The first to third masking parts 230a, 230b, and 230c are made of a chromium (Cr) -based material, but are not limited thereto. Various materials capable of shielding or shielding the laser beam L can be applied .

Hereinafter, a method of manufacturing the shadow mask according to the first embodiment of the laser machining pattern 120 by laser machining will be described in more detail.

First, a base 110 is provided and placed on the stage. Here, the base 110 according to the embodiment is in the form of a plate made of a metal such as an invar alloy.

After passing through the masking portion, the laser beam passing through the diffractive optical portion passes through the zoom lens portion and the projection portion to reach the upper side of the base 110. Here, the distance between the lenses constituting the zoom lens part is adjusted according to the size and shape of the mask pattern. When the laser beam L is output by operating the beam supply unit, the laser beam L passes through the first opening 231a of the first masking unit 230a, passes through the zoom lens unit and the projection unit, 110).

The area of the laser beam L irradiated from the diffraction optical unit to the first masking unit 230a is wider than the area of the first aperture 231a and edge sharpening occurs when the laser beam L passes through the masking unit. So as to enable fine laser patterning. Only the laser beam L passing through the first opening 231a out of the laser beam L irradiated from the diffractive optical portion toward the first masking portion 230a is irradiated onto the base 110, The laser beam L irradiated to the position of the region other than the one opening 231a is shielded.

In other words, the area of the laser beam L irradiated from the diffractive optical portion is wider than the first opening 231a of the first masking portion 230a, and the first masking portion 230a forms the first opening The laser beam L adjusted to the area corresponding to the laser beam 231a is irradiated onto the base 110 (see FIG. 10A). When the laser beam L is irradiated on the base 110 for a predetermined time with an area corresponding to the first opening 231a, the coupling structure is broken in the irradiated base 110 region of the laser beam L By the reaction phenomenon, the region of the base 110 irradiated with the laser beam L is removed to a predetermined depth.

Thus, as shown in FIG. 10B, a groove having a predetermined depth (hereinafter referred to as a first groove 121) is generated.

The first masking part 230a is moved to the outside of the base 110 and the second masking part 230b is formed on the upper side of the base 110 by the first masking part 230a, The second masking portion 230b is disposed.

At this time, the position of the second masking portion 230b is adjusted so that the center of the first groove 121 provided in the base 110 and the center of the second opening 231b of the second masking portion 230b are concentric with each other do.

10B, when the laser beam L passes through the second opening 231b of the second masking portion 230b and irradiates the base 110 with the laser beam L, do. At this time, the area of the laser beam L irradiated from the diffraction optical part 220 to the second masking part 230b is larger than the area of the second opening 231b.

Only the laser beam L passing through the second opening 231b out of the laser beam L passing through the diffraction optical section 220 and irradiated toward the second masking section 230b is irradiated onto the base 110 And the laser beam L irradiated to the position of the area other than the second opening 231b is shielded.

That is, the laser beam L is irradiated while being adjusted by the second masking portion 230b to the area corresponding to the second opening 231b (see FIG. 10B). The laser beam L irradiated through the second opening 231b is irradiated toward the first groove 121 and has an area smaller than that of the bottom surface of the first groove 121. [

When the laser beam L is irradiated to the bottom surface of the first groove 121 for a predetermined time, the laser beam L is removed to a predetermined depth by a reaction phenomenon such as breakage of the coupling structure in the irradiated base region of the laser beam L The second groove 122 is formed under the first groove 121 as shown in FIG.

When the second groove 122 is formed in the base 110 by the second masking portion 230b, the second masking portion 230b is moved outward and the diffraction optical portion 220 and the zoom lens portion 260 The third masking portion 230c is disposed between the first masking portion 230c and the second masking portion 230c.

At this time, the position of the third masking portion 230c is adjusted so that the center of the second groove 122 provided in the base 110 and the center of the third opening 231c of the third masking portion 230c are concentric with each other Alternatively, the position of the laser beam is adjusted using the zoom lens part and the projection part. 10C, the laser beam L passes through the third opening 231c of the third masking portion 230c to be incident on the zoom lens unit L3, as shown in FIG. 10C, And the projection portion, and is irradiated onto the base 110.

At this time, the area of the laser beam L irradiated to the third masking portion 230c is larger than the area of the third opening 231c. Only the laser beam L passing through the third opening 231c of the laser beam L irradiated toward the third masking portion 230c is irradiated onto the base 110 and the third opening 231c The laser beam L irradiated to the position of the region other than the laser beam L is shielded.

That is, the laser beam L is irradiated while being adjusted by the third masking portion 230c to an area corresponding to the third opening 231c (see FIG. 10C). The laser beam L irradiated through the third opening 231c is irradiated toward the second groove 122 and has an area smaller than that of the bottom surface of the second groove 122.

When the laser beam L is irradiated toward the bottom surface of the second groove 122 for a predetermined time, the laser beam L is irradiated with the laser beam L by a reaction phenomenon The third groove 123 is formed below the second groove 122 as shown in FIG. 10D. At this time, the third groove 123 is opened to the lower portion of the base 110.

Therefore, the third groove 123 is provided under the second groove 122 by the laser machining process using the third masking portion 230c. Finally, as shown in FIG. 10D, the base 110 is moved up and down And the laser processing pattern 120 is formed in such a shape that the diameter or the inner diameter becomes gradually smaller toward the lower side.

Each of the first to third masking portions 230a, 230b and 230c is provided with a plurality of openings. The laser beam that has passed through the diffraction optical portion and branched is passed through the masking pattern of the masking portion in a one-to- The laser beam reaches the base 110 at the same time so that a plurality of laser processing patterns 120 are provided. When the area of the base 110 is large, a plurality of laser processing patterns 120 may be formed on the entire surface of the base 110 while moving the base 110 using the stage, thereby manufacturing a shadow mask.

12 is a diagram sequentially showing a method of forming the laser processing pattern 120 by the laser processing method according to the second embodiment of the present invention. 13 is a view for explaining a masking portion provided for manufacturing a shadow mask by the method according to the second embodiment of the present invention.

The shadow mask manufacturing method according to the second embodiment is a forming method using a phase shift mask technique, and is manufactured using a phase shift mask as the masking portion 240. The patterning method using a phase shift mask is a known method of using interference between transmitted light by giving a phase difference to the transmitted light.

The masking pattern of the shadow mask for the method of manufacturing a shadow mask according to the second embodiment is a method using a masking portion having a plurality of phase shifters 241, 242 and 243. That is, the masking unit 240 according to the second embodiment of the present invention has a plurality of phase shifters 241, 242, and 243 arranged in a stepped shape in one masking unit 240.

The phase shifter mask (PSM) is a technique known in the art, and uses any one of various known types of phase shifter masks (PSM).

7, the phase shifter mask used as the masking part 240 in the present invention is formed by a phase shifter 241, 242, 243 through which a laser beam L is transmitted, on a body having a predetermined area, And a light shielding portion 244 located outside the phase shifters 241, 242 and 243 and unable to transmit the laser beam L are provided.

That is, a part of the body of the masking part 240 is a region provided with the phase shifters 241, 242 and 243, and the area around the phase shifters 241, 242 and 243 is a light shielding part where the laser beam L is shielded Area.

At this time, a plurality of phase shifters 241, 242, and 243 are provided, and the plurality of phase shifters 241, 242, and 243 are sequentially arranged in the height direction of the body with different areas, It accomplishes. In the second embodiment of the present invention, the plurality of phase shifters 241, 242, and 243 have a groove shape formed by processing a body.

That is, the masking part 240 according to the second embodiment includes a groove-shaped first phase shifter 241 formed at a first depth A1 from the upper surface of the body and having a first area, Shaped second phase having a second depth A2 which is deeper than the first depth A1 and has a second area smaller than the area of the first phase shifter 241 (first area A1) Shaped shifter 242 which is formed at a third depth A3 that is deeper than the second depth from the upper surface of the body and has a smaller area than the area of the second phase shifter 242 A light shielding portion 244 is provided in a region outside the first phase shifter 241 in a region in the left and right direction of the body including the three-phase shifter 243.

The first phase shifter 241, the second phase shifter 242 and the third phase shifter 243 thus prepared are inverted by 60 °, 120 ° and 180 °, for example. Therefore, the phase of the laser beam L irradiated from the upper side of the masking portion is gradually shifted or inverted while passing through the first to third phase shifters 241, 242 and 243.

That is, the phase of the laser beam L between the first phase shifter 241 and the second phase shifter 242 and between the second phase shifter 242 and the third phase shifter 243 are continuously changed.

At this time, the intensity of the laser beam changes and shifts due to the phase difference (e.g., 60, 120, 180) between the first phase shifter 241, the second phase shifter 242, and the third phase shifter 243, Theoretically, the laser beam is irradiated in a stepwise distribution or shape as shown in FIG. 12B, but the laser beam is not irradiated stepwise due to the limit of the resolution, and the laser beam is inclined as shown in FIG. 12C .

The masking part 240 having the first to third phase shifters 241, 242 and 243 may be formed by etching the body.

The body may be a quartz capable of transmitting the laser beam L. The quartz body may be provided with first to third phase shifters 241, 242 and 243, A light shielding portion 244 in the form of a film, a thin film or a block for blocking the beam L may be provided. Of course, the light shielding portion 244 may not be provided in the inside of the body, but may be provided on the outer surface of the first phase shifter 241 on the upper surface of the body.

In the above description, the masking part 240 according to the second embodiment processes the body itself to provide the groove-shaped first to third phase shifters 241, 242 and 243. However, the present invention is not limited thereto, and it may be a structure in which a thin film capable of changing the phase of the laser beam L is formed on the upper surface of the body. At this time, the thin film phase shifter formed on the upper surface of the body is formed to have a stepped shape with a step in the height direction.

A method of forming the laser machining pattern 120 by the laser machining method according to the second embodiment of the present invention will be described below with reference to Fig.

First, the base 110 is provided and placed on the stage, and the masking portion 240 according to the second embodiment is disposed between the diffractive optical portion and the zoom lens portion. Subsequently, when the laser beam L is outputted by operating the beam supply unit, the laser beam L is irradiated toward the masking portion.

At this time, of the irradiated laser beams L, the laser beam L directed to the first to third phase shifters 241, 242, and 243 passes through the zoom lens unit and the projection unit and is irradiated to the base 110, The laser beam L irradiated toward the light-shielding portion 244 is not irradiated to the base 110, and its movement is blocked. As the laser beam irradiated from the upper side of the masking portion 240 is gradually and continuously shifted in phase while passing through the first to third phase shifters 241, 242 and 243, As shown in the figure, a laser processing pattern 120 is formed on the base 110 so that its inner diameter or width becomes narrower downward.

Fig. 14 is a diagram sequentially showing the method for forming the laser machining pattern 120 by the laser machining method according to the third embodiment of the present invention. 15 is a view for explaining a masking portion provided for manufacturing a shadow mask by the method according to the third embodiment of the present invention.

As shown in the figure, in the method of manufacturing a shadow mask according to the third embodiment, a slit mask is used to manufacture a shadow mask using a slit mask. 15A and 15B, the slit mask includes a plurality of light shielding films 252a, 252b, and 252c for blocking the transmission of the laser beam L onto or inside the body 251 through which the laser beam L can pass, The width of the plurality of light shielding films 252a, 252b, and 252c is different from each other so that the intensity of the laser beam L irradiated to the base 110 is adjusted differently.

In order to manufacture a shadow mask having a trapezoidal or quadrangular-pyramidal pattern whose inner diameter is narrower toward the lower side as in the embodiment of the present invention, the masking part 250 according to the third embodiment has a plurality of The light shielding films 252a, 252b and 252c are formed so that the patterns are spaced apart from each other, and the spaced apart spaces are the transmitting regions through which the laser beam L passes. A plurality of light shielding films 252a, 252b and 252c are formed on the body 251 so that the width of the light shielding films 252a, 252b and 252c becomes narrower from the edge toward the center in FIGS. 15A and 15B.

In other words, the masking portion 250 is provided so that the width of the transmission region between the light-shielding films 252a, 252b, 252c and the light-shielding films 252a, 252b, 252c becomes wider from the edge toward the center thereof .

When the laser beam L is irradiated from above the masking portion 250, the intensity of the laser beam irradiated to the region of the base 110 positioned below the wide transmitting region is lower than the relatively narrow transmitting region Is larger than the intensity of the laser beam L irradiated to the region of the base 110 in which the laser beam L is located. The intensity of the laser beam L irradiated from the edge toward the center increases as the laser beam L is irradiated to the base 110 because the width of the transmission region is wider from the edge toward the center in the third embodiment, Is high.

Hereinafter, a method of manufacturing the laser machining pattern 120 by the laser machining method according to the third embodiment of the present invention will be described with reference to Fig.

First, a base 110 is provided and placed on a stage, and a masking part 250 according to the third embodiment is disposed between the diffractive optical part and the zoom lens part. Subsequently, when the laser beam L is output, the laser beam L is irradiated toward the masking portion 250.

The laser beam L directed to the first through third transmission areas 253a, 253b and 253c of the masking part 250 of the irradiated laser beam L passes through the zoom lens part and the projection part, And the laser beam L irradiated toward the light shielding film 252a of the masking portion 250 is not irradiated to the base 110 and its movement is blocked.

The intensity of the laser beam L irradiated onto the base 110 passes through the first transmissive region 253a located at the edge and is located inside the body 251 relative to the first transmissive region 253a The intensity of the laser beam L irradiated onto the base 110 through the second transmissive region 253b is greater and the intensity of the laser beam L irradiated onto the third transmissive region 252b located inside the body 251 And the intensity of the laser beam L irradiated on the base 110 is large.

As shown in Fig. 14B, by the change in the intensity of the laser beam L for each region, a mask pattern whose inner diameter or width becomes narrower toward the lower side of the base 110 is provided.

In the fourth embodiment of the present invention, the masking portion forms a masking pattern made of a photoresist by a photolithography process on the base, and the step of irradiating the laser beam on the masking portion comprises: So that the laser beam is irradiated to the portion where the photoresist is removed.

In some cases, it is also possible to form a photoresist layer on the upper side of the base, and to carry out the processing using a laser without being removed through the developing step. At this time, the laser is irradiated on the photoresist layer substantially not on the base, so that the photoresist and the metal base are simultaneously processed.

As described above, the method of manufacturing the shadow mask according to the first to fourth embodiments of the present invention is a method of processing the laser processing pattern 120 on the base by irradiating a laser beam. Thereafter, the wet etching pattern 130 are formed to smooth the surface of the laser processing pattern 120, thereby providing a metal shadow mask with improved processing quality.

A laser processing step according to another embodiment of the present invention includes a first step of setting a unit processing region on the base, a first step of starting a laser beam at a boundary of the unit processing region, A second step of processing the laser processing pattern included in the unit processing area until the other boundary of the unit processing area is reached, and after the processing of the second step, A third step of switching the direction of the laser beam to a next step and moving the laser beam by a step pitch so as to move the laser beam to the second scan path and repeating the second step and the third step and a fourth step in which processing is performed for the entire unit processing region when the movement of the laser beam is completed along the nth scan path.

The unit processing region in the present invention means a region in which a laser processing pattern can be formed on the base by a single setting of the laser processing apparatus, A specific area on the base can be arbitrarily designated and set as a unit processing area. Such a unit processing region may include one or more laser processing patterns, and it is desirable to set the size of the unit processing region to be large in consideration of the processing speed.

The unit processing region may be formed in a single number or a plurality of units. When the processing of the unit processing region is completed, the formation of the laser processing pattern continuous to the wet etching pattern on the base is completed.

On the other hand, in the step of forming a continuous laser processing pattern in the wet etching pattern using the laser according to the present invention, as shown in FIG. 16, first, a unit processing region is set on the base on which the wet etching pattern is formed (Step 1).

The unit processing region may include a single or a plurality of laser processing patterns, and is set as a virtual region on the base.

Specifically, the length of the unit processing region refers to a length through which the laser beam can move without being redirected along one scan path, and the width of the unit processing region is generally formed by the directional step pitch to be described later.

By setting the entire machining area to include the entire laser machining pattern in the unit machining area in setting the unit machining area, the entire machining can be completed without dividing the machining area several times. As a result, It is possible to eliminate stitching problems caused by dividing a workpiece into a plurality of divided regions.

In addition, by setting the unit working area equal to the size of the base of a large area, it becomes possible to process a large area base without stitching.

Then, the laser beam is moved in a first scan path starting from a boundary of the unit processing region, and is included in the unit processing region until reaching the other boundary of the unit processing region (Second step) is performed.

That is, a first scan path is set from one boundary to the other boundary of the unit processing region set on the base, and processing of the portion or the whole of the laser processing pattern included in the unit processing region while moving the laser beam is performed .

When the laser beam reaches the other boundary of the unit processing region while the laser beam moves along the first scan path, the direction of the laser beam is changed to the next step, And moves to the second scan path (step 3).

That is, when the laser beam reaches the other boundary of the unit processing region, the laser is turned off, the direction of the laser beam is changed, and the laser beam is moved by the set step pitch, . At this time, the laser is turned on again.

The step pitch means a distance between adjacent scan paths. For example, the step pitch is a distance between a first scan path and a second scan path, and moves the second scan path from the center of the laser beam moving in the first scan path Means the distance to the center of the laser beam.

Here, the first scan path and the second scan path may be the same direction, or may be set to the opposite direction, as shown in FIG. That is, the moving direction of the laser beam can be reversed. That is, the n-1 th scan path and the n th scan path may be set to move the laser beam in the same direction or in the opposite direction, but the present invention is not limited thereto, and a plurality of scan paths may be set to a specific direction or vice versa , Or a combination thereof.

In addition, the step pitch at the time of changing the direction from the first scan path to the second scan path is formed to be equal to or smaller than the size of the laser beam of the first scan path so that uniform pattern processing is performed. That is, the step pitch in the direction change from the (n-1) th scan path to the nth scan path is equal to or smaller than the size of the laser beam in the (n-1) th scan path.

The (n-1) -th scan pitch and the n-th scan pitch may be set differently according to the shape of the laser processing pattern. Here, the relative speed and the pulse frequency of the base and the pulsed laser beam are set to be equal to the scanning pitch = v / f (v: the relative speed of the base and the laser beam by the operation of the driving unit and f: , It means the interval between successive pulsed laser beams.

This step pitch serves as a reference for setting an overlap rate of a laser beam to be described later. As the interval of the scan pitch is narrower, the overlap ratio of the laser beam increases, .

Next, the first and second steps are repeatedly performed, and when the movement of the laser beam is completed along the nth scan path, the entire machining area is processed (step 4).

As shown in FIG. 16, the laser beam is moved along the first scan path, and the laser processing pattern formed on the first scan path is processed. Then, when the laser beam reaches the other boundary on the unit processing region, the laser beam moves by the step pitch after the direction change to the next step, and the laser beam moves along the second scan path to reach the boundary on the first unit processing region . When the nth scan path is set and the movement of the laser beam is completed to reach the boundary of the unit processing region, the processing of the laser processing pattern included in the unit processing region is completed .

As a result, the number of times of changing the direction of the laser beam generated during machining can be significantly reduced (moving the scan path and turning and moving to the next step), and a relatively simple machining procedure is repeatedly performed, Productivity is improved.

As described above, the present invention is to form a laser machining pattern continuous to the wet etching pattern on a base by using a laser, in which a unit machining area is set on the base, and a laser beam is moved on the unit machining area The scan path is set at a specific step pitch interval to perform machining of each unit machining area to prevent thermal energy from accumulating on the base, thereby protecting the base and forming a fine pattern.

In addition, since one laser processing pattern included in the processing region includes a plurality of scan paths, in order to complete all the processing for one laser processing pattern, all the scan paths included therein are processed, It is possible to intermittently process the pattern with a downtime to prevent accumulation of heat energy in the base, thereby protecting the base and forming a fine laser machining pattern.

On the other hand, when the laser beam moves along the scan path, the processing depth can be set corresponding to each scan path. That is, the machining depth of the first scan path can be set to a certain value and the machining depth of the second scan path can be set to another value, and the machining depth of the nth scan path can be set to a different scan path It can also be set symmetrically. This can be variously set according to the shape of the laser processing pattern, and the setting of the processing depth can be realized by controlling the energy accumulation distribution of the laser beam.

First, as a method of setting the processing depth, an overlap rate (overlap ratio = {(laser beam size - scan pitch) / laser beam size} x 100 of the laser beam moving in the scan path, = v / f, v: relative speed between the base and the laser beam due to the operation of the driving unit, and f: pulse frequency of the laser source applied on the base).

The setting of the processing depth according to the overlap ratio of the laser beam is performed by a method of setting the relative speed of the beam differently according to the scan path while fixing the pulse frequency value of the laser source part, , And a method of setting the pulse frequency value differently for each scan path.

That is, the overlap ratio of the laser beam can be set by controlling the scan pitch according to the size of the laser beam, and the relative speed and the pulse frequency value of the beam are adjusted at the scan pitch = v / f, The overlapping degree of the laser beam is controlled so as to set the processing depth. As the processing depth of the laser processing pattern becomes deeper, the overlap ratio of the laser beam is set to be larger.

FIG. 17 is a schematic diagram for controlling the depth of processing by the degree of overlap of the laser beams. The depth of laser processing is controlled by controlling the overlap ratio of the laser beams for each scan path.

Secondly, the setting of the machining depth can be controlled by the number of overlaps of the scan path. That is, the energy accumulation distribution according to how many times the laser beam is moved on the same scan path is controlled to set the processing depth of the laser processing pattern.

Specifically, the number of overlapping of the scan paths is set in the scan path in the unit processing region while the relative speed and the pulse frequency value of the laser beam are fixed for each scan path (that is, the scan pitch is constant).

FIG. 18 is a schematic diagram for controlling the depth of processing by the number of superimpositions of the scan paths, wherein the number of superimposing of laser beams is controlled for each scan path to form a laser processing pattern having a depth.

Thirdly, the setting of the processing depth may be determined by setting the energy intensity for each scan path or setting the energy intensity for each pulse of the laser source in one scan path, or by a combination of the two. That is, the energy accumulation distribution according to the adjustment of the energy intensity of the laser beam on the same scan path can be controlled to set the processing depth of the laser machining pattern.

Specifically, while the relative speed of the laser beam and the pulse frequency value are fixed (i.e., the scan pitch is fixed) for each scan path, the energy intensity of each pulse of the laser source is varied Or set different energy intensities for each scan path.

19 is a schematic diagram for controlling the processing depth by setting different energy intensities for each pulse of the laser source moving relative to each other along each scan path. The intensity of the energy of the laser beam is controlled along each scan path, To form a laser machining pattern.

The method according to any one of the preceding claims, wherein the overlapping ratio of the laser beam traveling in the scan path, the overlapping number of the scan paths, and the energy intensity of the laser beam traveling in the scan path, May be determined by combination.

On the other hand, by setting the 1, ..., nth scan path (first direction) and the 1, ..., mth scan path (second direction) perpendicular to the scan path, can do.

As a method of forming such a laser machining pattern, it is possible to form a tapered laser machining pattern by setting the energy accumulation distribution to a sequential intensity along the scan path. That is, the laser processing pattern is formed so that the tapered laser processing pattern can be formed by setting the energy accumulation distribution to the sequential intensity along the scan path while setting the scan path orthogonal to the two directions.

Specifically, as shown in Fig. 20, the machining depths of the m-th scan path in the n-th first direction in the first direction and the first and second directions in the second direction are set to be the same , And set the machining depth for all remaining scan paths in such a way.

For example, the processing depth of the scan path in the first direction (= the first direction n-1 (= the first direction n-1) is larger than the processing depth of the scan path in the first direction Th scan line in the first direction = second direction = second direction = second direction (m-1) th scan path). The machining depth is set in the same manner for the remaining scan paths.

As another method of forming a tapered laser processing pattern, a plurality of energy regions are set on a laser processing pattern region included in the unit processing region, and the energy accumulation distribution is set to a sequential intensity for each energy region The tapered third processing depth can be set.

Specifically, the energy accumulation distribution allocated to the second energy region is set to a value equal to or greater than the energy accumulation distribution assigned to the first energy region, and the allocation of the energy accumulation to the remaining energy region in such a manner is a sequential Lt; / RTI >

The energy accumulation distribution for each energy region is set by the number of times the scan path is superimposed or the energy intensity of the laser beam traveling on the scan path is changed.

21 shows the case where the energy accumulation distribution for the energy region is controlled by the number of overlapping of the scan paths. In the state where the relative speed of the fixed laser beam, the pulse frequency, and the pulse energy value are set, And the number of overlapping of the scan paths with respect to the difference area between the first energy region and the second energy region.

Then, the number of overlapping times is set to be greater than or equal to the overlapping number of the second energy region and the third energy region, and the energy accumulation distribution is controlled for all the remaining energy regions, .

22 shows the case where the energy accumulation distribution is controlled for each energy region by the change of the energy intensity for each pulse of the laser source moving in the scan path, and the intensity level of the pulse energy for each energy region is set to the same value . That is, the pulse energy intensity of the same waveform is set for the first scan path and the nth scan path.

As shown in FIG. 22, the waveform of the pulse energy of the second (= n-1) th scan path is compared with the waveform of the pulse energy of the first (= n) scan path, The intensity of the energy is determined.

Here, the number of overlapping of the scan paths may be sequentially set or the energy intensity may be sequentially set for each pulse of the laser source moving in the scan path so that the energy accumulation distribution for each energy region may be set to a sequential intensity.

As described above, according to the present invention, it is possible to easily form a laser machining pattern by setting a processing depth for the scan path, and the formation of a tapered laser machining pattern is controlled by controlling the cumulative distribution of energy by a specific scan path or energy region .

Further, a wet etching pattern by the wet etching step is formed to a thickness of 95% to 50% with respect to the entire thickness of the base, and a laser processing pattern by the laser processing step is formed with the remaining 5% to 50% This can solve the problem of productivity deterioration due to the conventional laser machining process and the thickness control by the wet etching and laser machining processes can be carried out in consideration of the wet etching pattern and the workability and productivity of the laser processing pattern .

In addition, since the height of the protruding burr is formed to be less than 1 mu m on the back side of the laser processing pattern by the laser processing step, glass damage can be minimized when the organic material is deposited and the shadow mask and the glass are in close contact Thereby improving the quality of the deposition. The wet etching and the laser processing are combined to fabricate the shadow mask with low energy so as to minimize burrs.

When the laser machining pattern is formed so as to have a narrow inner diameter from the machined surface on the base, it is preferable to form the taper angle within the range of 30 to 90 degrees.

This is due to the isotropic nature of the wet etch in the conventional wet etch-only approach, which makes it impossible to implement any taper angle. However, since the energy level of each position can be adjusted by performing laser processing after the wet etching, the taper angle (a in FIG. 23) of the opening can ideally be set in a range from more than 0 degrees to less than 90 degrees As shown in FIG.

However, considering the physical stiffness of the opening of the metal mask and the shadow effect at the time of depositing the organic material, it may be varied depending on the thickness of the metal material, the shape and size of the opening pattern arrangement, and the taper angle A is less than 30 degrees Preferably at most 90 degrees.

That is, through the complex machining method according to the present invention, the taper angle of the metal mask can be realized while securing the level of productivity acceptable to an industrial field and the quality level of the surface after machining.

In addition, the shape of the opening realized by the wet etching only method shows both the corner round (the processed surface of the wet etching pattern) on the plan view of FIG. 5 and the bowl shape on the sectional view. In the case of using the complex machining method of the present invention, since the laser machining is performed after the wet etching process, the radius of curvature R of the wet etched pattern machined surface and the shape of the bowl the depth d of the bowl shape can be adjusted.

For example, if the amount of processing by wet etching is increased and the amount of processing by laser is set to be small, the processing time can be shortened due to a small amount of processing by the laser, but the radius of curvature R, The total machining time will be relatively increased if the machining amount by the wet etching is reduced and the machining amount by the laser is set to be large. On the contrary, the wet etching pattern The radius of curvature and the shape of the bowl relative to the machined surface are reduced so that the taper linearity of the section is increased.

As described above, in the method of manufacturing a shadow mask according to the present invention, wet etching is performed to form a wet etching pattern while forming an opening of a shadow mask, and then a laser beam is continuously applied to the wet etching pattern to process the laser processing pattern The wet etching is performed to form a rough shape of the metal shadow mask.

Thereafter, the removal amount of the metal material to be removed in the additional processing by the laser is very small, thereby reducing the number of laser pulses. As a result, the conventional method It is possible to remarkably reduce the heat accumulation effect and provide a high-quality shadow mask.

Therefore, in the production of a shadow mask, the wet etching and the laser processing are used in combination to solve the problem of productivity deterioration due to the conventional laser machining process and to provide a high quality shadow mask by wet etching .

In addition, by a complex processing method implemented by laser processing and wet etching, the problem of under-cutting due to the isotropic nature of the conventional wet etching is solved, and the gradual deposition of the organic light emitting material deposited on the substrate Thereby clarifying the boundaries of the deposited organic luminescent material, thereby improving the performance of the display device.

In addition, by a complex processing method implemented by laser processing and wet etching, the QHD (about 500 ppi level) or more UHD (about 500 ppi level) is not limited to the limit of shape parameters for mask pattern formation by the conventional wet etching method 800 ppi) can be realized.

110: base 120: laser machining pattern
130: wet etching pattern 200: masking portion
230, 240, 250: masking portions 231a, 231b, 231c: openings
241, 242, 243: phase shifters 253a, 253b, 253c:

Claims (17)

A method of manufacturing a shadow mask having a mask pattern,
A wet etching step of performing a wet etching on the base to form a wet etching pattern;
And a laser processing step of performing laser processing on the upper side or the lower side of the base on which the wet etching pattern is formed to form a laser processing pattern continuous to the wet etching pattern,
Wherein a wet etching pattern is formed by the wet etching step to a thickness of 95% to 50% with respect to the entire thickness of the base, and a laser machining pattern is formed by the laser machining step with the remaining thickness A method of manufacturing a shadow mask using the method. The laser processing method according to claim 1,
Wherein a masking portion provided with a masking pattern corresponding to a mask pattern of a shadow mask to be manufactured is formed on the base, and a laser beam is irradiated from above the masking portion. The image forming apparatus according to claim 2,
A masking pattern having different widths is formed in each of the masking portions,
Wherein the step of irradiating the laser beam on the masking unit comprises:
And a plurality of laser beam irradiating processes for irradiating a laser beam on the masking unit using each of the plurality of masking units. The method of claim 3, wherein in the step of irradiating the laser beam using each of the plurality of masking portions,
Wherein a laser beam is irradiated by using a masking portion having an opening type masking pattern whose width becomes narrower toward the last laser beam irradiation step in the plurality of laser beam irradiation steps. The image forming apparatus according to claim 2,
A masking pattern made of a photoresist by a photolithography process is formed on the base,
Wherein the step of irradiating the laser beam on the masking unit comprises:
And a laser beam is irradiated to a portion where the photoresist is removed in the masking pattern of the masking portion. 3. The method of claim 2,
Wherein the masking portions are PSMs having different widths and having a plurality of masking patterns capable of phase-shifting the laser beam at different angles,
In the process of irradiating the laser beam on the masking portion,
Characterized in that a laser beam is irradiated on the masking portion in the form of a phase shift mask (PSM), and the laser beam is irradiated onto the base so as to pass through the respective masking patterns capable of performing phase shift in the laser beam A method of manufacturing a shadow mask using the method. 3. The light-emitting device according to claim 2, wherein the masking portion comprises: a body capable of transmitting a laser beam; a plurality of light-shielding films formed on the body so as to be spaced apart from each other in the width direction; and a plurality of transmissive transmissive laser beams A mask pattern in the form of a slit including an area is formed,
The width of the light shielding film is made to become thinner from the outer direction toward the center of the body,
The width of the transmission region is widened from the outer direction toward the center of the body,
In the process of irradiating the laser beam on the masking portion,
The intensity of the laser beam irradiated on the base region corresponding to the lower side of the relatively wide transmitting region is set to be higher than that of the transmitting region having the relatively narrower width by irradiating the laser beam on the upper side of the masking portion in the form of a slit mask And irradiating the base region corresponding to the lower side with the laser beam so that the intensity is higher than the intensity of the laser beam irradiated to the base region corresponding to the lower side. The laser processing method according to claim 1,
A first step of setting a unit processing region on the base;
The laser beam is moved along a first scan path starting from a boundary of the unit processing region and is irradiated with a laser beam included in the unit processing region until reaching the other boundary of the unit processing region, A second step of processing the pattern;
A third step of switching the direction of the laser beam to a next step, moving the laser beam by a step pitch, and moving the laser beam to a second scan path; And
And a fourth step of repeating the second and third steps to process the entire unit processing region when the movement of the laser beam is completed along the nth scan path. A method of manufacturing a shadow mask. The method of manufacturing a shadow mask according to claim 8,
Wherein the machining depth is set corresponding to each scan path. 9. The method according to claim 8, wherein a plurality of energy regions are set on the laser processing pattern region included in the unit processing region, and the energy accumulation distribution is set to a sequential intensity for each energy region to set the processing depth A method of manufacturing a shadow mask using a processing method. The laser processing method according to claim 1,
And the inner diameter of the shadow mask is narrowed from the machining surface on the base. The method of claim 1, wherein the wet etching step comprises:
Forming a photoresist pattern for forming the wet etching pattern on the upper side of the base, and wet etching the base along the removed portion of the photoresist. The laser processing method according to claim 1,
Wherein the wet etching is performed in the same or opposite direction as the wet etching direction. The laser processing method according to claim 13,
Wherein the wet etching is performed in the same or opposite direction as the wet etching direction and is continuously formed in the wet etching pattern. The laser processing method according to claim 1, wherein when the laser machining pattern is tapered from the machined surface on the base by narrowing the inner diameter, a taper angle is formed in a range of 30 to 90 degrees, A method of manufacturing a mask. The method of manufacturing a shadow mask according to claim 1, wherein the height of the protruding burr is 1 占 퐉 or less on the back surface of the laser processing pattern by the laser processing step. A shadow mask produced by the manufacturing method according to any one of claims 1 to 16.

Images