CN107394000A - 硅基铂硅纳米管探测器及其制作方法 - Google Patents
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Abstract
本发明公开了一种硅基铂硅纳米管探测器及其制作方法，所述硅基铂硅纳米管探测器的光敏层的微观结构为铂硅纳米管结构，所述方法即用于制作这种光敏层微观结构为铂硅纳米管结构的硅基铂硅纳米管探测器；本发明的有益技术效果是：提出了一种硅基铂硅纳米管探测器及其制作方法，本发明方案可以使硅基红外探测器的量子效率得到提升，红外探测器的截止波长也可以得到有效延长。
Description
技术领域
本发明涉及一种硅基探测器制作技术，尤其涉及一种硅基铂硅纳米管探测器及其制作方法。
背景技术
铂硅红外肖特基势垒探测器焦平面阵列具有像元集成度高、光响应均匀性好、能多光谱探测、性能稳定等特点，广泛应用于红外前视、导弹寻的、空中侦察、红外告警、海岸警卫等军事领域。
与锑化铟、HgTeCd红外探测器相比，铂硅红外探测器的量子效率低1个数量级以上，为了提高铂硅红外探测器的量子效率，多年来，技术人员进行了大量的研究，但一直未有突破性进展。
发明内容
针对背景技术中的问题，本发明提出了一种硅基铂硅纳米管探测器，包括衬底、栅氧介质层、氮化硅薄膜介质层、保护环、沟阻、光敏层、钝化层、前电极、磷离子注入层和背面电极层；所述光敏层设置在衬底上表面的中部；所述保护环形成在衬底内，保护环位于光敏层的周向外围；所述沟阻形成在衬底内，沟阻位于保护环的周向外围；所述栅氧介质层将衬底上表面上光敏层以外的区域覆盖；所述氮化硅薄膜介质层层叠在栅氧介质层表面；所述钝化层将氮化硅薄膜介质层和光敏层覆盖，钝化层上与光敏层对应的位置处设置有电极孔，前电极设置在电极孔内；所述磷离子注入层形成在衬底下表面的表层中；所述背面电极层层叠在衬底下表面上；其特征在于：所述光敏层的微观结构为铂硅纳米管结构。
采用本发明方案后，与硅衬底形成肖特基势垒接触的光敏层的微观结构为铂硅纳米管结构；基于现有理论可知，随着材料结构特征尺寸的减小，其量子尺寸效应、量子隧穿效应、库仑阻塞效应以及表面、界面效应等都会表现得越来越明显，铂硅纳米管与硅衬底结合后，两种材料的交界处就会存在边缘场效应，从而产生极大的边缘电场，这就可以对光生电子起到雪崩倍增效应，从而增加探测器的量子效率，同时，由于存在量子遂穿效应及单电子效应，铂硅红外探测器的截止波长也可以得到有效延长。
基于前述的硅基铂硅纳米管探测器，本发明还提出了一种硅基铂硅纳米管探测器的制作方法，所述硅基铂硅纳米管探测器的结构如前所述，具体的制作方法为：衬底上用于设置光敏层的区域记为光敏区；
1)提供衬底；
2)在衬底的上表面上生长栅氧介质层；
3)在栅氧介质层表面生长氮化硅薄膜介质层；
4)采用硼离子注入工艺在衬底内形成保护环；
5)采用磷离子注入工艺在衬底内形成沟阻；
6)对衬底下表面进行减薄抛光处理；
7)采用磷离子注入工艺在衬底下表面的表层中形成磷离子注入层；
8)采用刻蚀工艺，使光敏区裸露出来；
9)采用超高真空溅射工艺，在光敏区范围内淀积铂膜并原位退火，形成铂硅薄膜；
10)用刻蚀液对光敏区进行腐蚀，获得硅核铂纳米管；所述刻蚀液为氢氟酸、过氧化氢和水的混合溶液，腐蚀时间3～10分钟；
11)采用超高真空退火工艺，使硅与铂发生固相反应，获得铂硅纳米管结构，所述铂硅纳米管结构即为光敏层；
12)在衬底上表面上淀积钝化层；
13)制作前电极和背面电极层。
前述工艺过程中，最为核心的是光敏层制作(步骤9)至11))，其余步骤与现有技术大同小异；制作光敏层时，先在光敏区范围内淀积铂膜，并原位退火，形成铂硅薄膜，然后利用金属铂的催化作用以及刻蚀液腐蚀硅衬底的各向异性，使与铂结合的硅离子及与铂接触的硅表面被刻蚀液腐蚀，从而在硅界面上形成硅纳米线，此过程中，铂离子也会在流体作用下、吸附在硅纳米线表面，以自组装的方式形成硅核铂纳米管结构，然后通过超高真空退火工艺，使硅与铂发生固相反应，从而获得铂硅纳米管结构的光敏层。
本发明的有益技术效果是：提出了一种硅基铂硅纳米管探测器及其制作方法，本发明方案可以使硅基红外探测器的量子效率得到提升，红外探测器的截止波长也可以得到有效延长。
附图说明
图1、本发明的断面结构示意图；
图中各个标记所对应的名称分别为：衬底1、栅氧介质层2、氮化硅薄膜介质层3、保护环4、沟阻5、光敏层6、钝化层7、前电极8、磷离子注入层9、背面电极层10。
具体实施方式
一种硅基铂硅纳米管探测器，包括衬底1、栅氧介质层2、氮化硅薄膜介质层3、保护环4、沟阻5、光敏层6、钝化层7、前电极8、磷离子注入层9和背面电极层10；所述光敏层6设置在衬底1上表面的中部；所述保护环4形成在衬底1内，保护环4位于光敏层6的周向外围；所述沟阻5形成在衬底1内，沟阻5位于保护环4的周向外围；所述栅氧介质层2将衬底1上表面上光敏层6以外的区域覆盖；所述氮化硅薄膜介质层3层叠在栅氧介质层2表面；所述钝化层7将氮化硅薄膜介质层3和光敏层6覆盖，钝化层7上与光敏层6对应的位置处设置有电极孔，前电极8设置在电极孔内；所述磷离子注入层9形成在衬底1下表面的表层中；所述背面电极层10层叠在衬底1下表面上；其创新在于：所述光敏层6的微观结构为铂硅纳米管结构。
一种硅基铂硅纳米管探测器的制作方法，所述硅基铂硅纳米管探测器包括衬底1、栅氧介质层2、氮化硅薄膜介质层3、保护环4、沟阻5、光敏层6、钝化层7、前电极8、磷离子注入层9和背面电极层10；所述光敏层6设置在衬底1上表面的中部；所述保护环4形成在衬底1内，保护环4位于光敏层6的周向外围；所述沟阻5形成在衬底1内，沟阻5位于保护环4的周向外围；所述栅氧介质层2将衬底1上表面上光敏层6以外的区域覆盖；所述氮化硅薄膜介质层3层叠在栅氧介质层2表面；所述钝化层7将氮化硅薄膜介质层3和光敏层6覆盖，钝化层7上与光敏层6对应的位置处设置有电极孔，前电极8设置在电极孔内；所述磷离子注入层9形成在衬底1下表面的表层中；所述背面电极层10层叠在衬底1下表面上；所述光敏层6的微观结构为铂硅纳米管结构；
其创新在于：所述制作方法包括：衬底1上用于设置光敏层6的区域记为光敏区；
1)提供衬底1；
2)在衬底1的上表面上生长栅氧介质层2；
3)在栅氧介质层2表面生长氮化硅薄膜介质层3；
4)采用硼离子注入工艺在衬底1内形成保护环4；
5)采用磷离子注入工艺在衬底1内形成沟阻5；
6)对衬底1下表面进行减薄抛光处理；
7)采用磷离子注入工艺在衬底1下表面的表层中形成磷离子注入层9；
8)采用刻蚀工艺，使光敏区裸露出来；
9)采用超高真空溅射工艺，在光敏区范围内淀积铂膜并原位退火，形成铂硅薄膜；
10)用刻蚀液对光敏区进行腐蚀，获得硅核铂纳米管；所述刻蚀液为氢氟酸、过氧化氢和水的混合溶液，腐蚀时间3～10分钟；
11)采用超高真空退火工艺，使硅与铂发生固相反应，获得铂硅纳米管结构，所述铂硅纳米管结构即为光敏层6；
12)在衬底1上表面上淀积钝化层7；
13)制作前电极8和背面电极层10。
Claims (2)
1.一种硅基铂硅纳米管探测器，包括衬底(1)、栅氧介质层(2)、氮化硅薄膜介质层(3)、保护环(4)、沟阻(5)、光敏层(6)、钝化层(7)、前电极(8)、磷离子注入层(9)和背面电极层(10)；所述光敏层(6)设置在衬底(1)上表面的中部；所述保护环(4)形成在衬底(1)内，保护环(4)位于光敏层(6)的周向外围；所述沟阻(5)形成在衬底(1)内，沟阻(5)位于保护环(4)的周向外围；所述栅氧介质层(2)将衬底(1)上表面上光敏层(6)以外的区域覆盖；所述氮化硅薄膜介质层(3)层叠在栅氧介质层(2)表面；所述钝化层(7)将氮化硅薄膜介质层(3)和光敏层(6)覆盖，钝化层(7)上与光敏层(6)对应的位置处设置有电极孔，前电极(8)设置在电极孔内；所述磷离子注入层(9)形成在衬底(1)下表面的表层中；所述背面电极层(10)层叠在衬底(1)下表面上；其特征在于：所述光敏层(6)的微观结构为铂硅纳米管结构。
2.一种硅基铂硅纳米管探测器的制作方法，所述硅基铂硅纳米管探测器包括衬底(1)、栅氧介质层(2)、氮化硅薄膜介质层(3)、保护环(4)、沟阻(5)、光敏层(6)、钝化层(7)、前电极(8)、磷离子注入层(9)和背面电极层(10)；所述光敏层(6)设置在衬底(1)上表面的中部；所述保护环(4)形成在衬底(1)内，保护环(4)位于光敏层(6)的周向外围；所述沟阻(5)形成在衬底(1)内，沟阻(5)位于保护环(4)的周向外围；所述栅氧介质层(2)将衬底(1)上表面上光敏层(6)以外的区域覆盖；所述氮化硅薄膜介质层(3)层叠在栅氧介质层(2)表面；所述钝化层(7)将氮化硅薄膜介质层(3)和光敏层(6)覆盖，钝化层(7)上与光敏层(6)对应的位置处设置有电极孔，前电极(8)设置在电极孔内；所述磷离子注入层(9)形成在衬底(1)下表面的表层中；所述背面电极层(10)层叠在衬底(1)下表面上；所述光敏层(6)的微观结构为铂硅纳米管结构；
其特征在于：所述制作方法包括：衬底(1)上用于设置光敏层(6)的区域记为光敏区；
1)提供衬底(1)；
2)在衬底(1)的上表面上生长栅氧介质层(2)；
3)在栅氧介质层(2)表面生长氮化硅薄膜介质层(3)；
4)采用硼离子注入工艺在衬底(1)内形成保护环(4)；
5)采用磷离子注入工艺在衬底(1)内形成沟阻(5)；
6)对衬底(1)下表面进行减薄抛光处理；
7)采用磷离子注入工艺在衬底(1)下表面的表层中形成磷离子注入层(9)；
8)采用刻蚀工艺，使光敏区裸露出来；
9)采用超高真空溅射工艺，在光敏区范围内淀积铂膜并原位退火，形成铂硅薄膜；
10)用刻蚀液对光敏区进行腐蚀，获得硅核铂纳米管；所述刻蚀液为氢氟酸、过氧化氢和水的混合溶液，腐蚀时间3～10分钟；
11)采用超高真空退火工艺，使硅与铂发生固相反应，获得铂硅纳米管结构，所述铂硅纳米管结构即为光敏层(6)；
12)在衬底(1)上表面上淀积钝化层(7)；
13)制作前电极(8)和背面电极层(10)。
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