CN107393912A - The COB encapsulating structures and its technique, mould of a kind of low thermal resistance high light efficiency LED lamp - Google Patents
The COB encapsulating structures and its technique, mould of a kind of low thermal resistance high light efficiency LED lamp Download PDFInfo
- Publication number
- CN107393912A CN107393912A CN201710639403.4A CN201710639403A CN107393912A CN 107393912 A CN107393912 A CN 107393912A CN 201710639403 A CN201710639403 A CN 201710639403A CN 107393912 A CN107393912 A CN 107393912A
- Authority
- CN
- China
- Prior art keywords
- silica gel
- chip
- substrate
- gel layer
- encapsulating structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of the COB encapsulating structures and its technique, mould of the LED of low thermal resistance specular removal, the COB encapsulating structures include：Substrate, lead, at least one chip unit on substrate；The lead connects the chip in the chip unit；The COB encapsulating structures also include fluorescence silica gel layer, and the fluorescence silica gel layer forms at least one airtight cavity on the substrate between the substrate, and chip unit is coated on interior by the airtight cavity；The fluorescence silica gel thickness degree is uniform.The beneficial effects of the invention are as follows：Instant invention overcomes being caused bad the problem of exciting in directly coating fluorescent material on chip in the prior art, and fluorescent material bears the integrity problem caused by heat so that the LED of technique encapsulation can realize low thermal resistance specular removal.
Description
Technical field
The present invention relates to LED encapsulation technologies field, and in particular to a kind of COB encapsulation technologies.
Background technology
LED illumination is that have the advantages that energy-conservation, long-life, non-maintaining, easy to control, environmentally friendly green illumination, as new one
The green light source in generation, specular removal are the indispensable characteristics of great power LED.At present, the light efficiency method for improving LED is mainly improved LED
Quantum efficiency and improve LED during middle light extraction rate.Suitable encapsulating material wherein is used to LED front end light transmission part
And encapsulating structure, the spilling pyramid of light in LED can be expanded, so as to greatly improve the extraction rate of light in LED, reach raising light efficiency
Purpose.Therefore, how to be realized using suitable encapsulating material and encapsulating structure and the optics that LED lights is controlled, be current LED
One of important directions of encapsulation field research.
From the point of view of LED encapsulates developing stage, LED has discrete and integrated two kinds of packing forms.LED discrete devices belong to tradition
Packing forms, it is widely used in each related field, by the development of nearly 40 years, has formed a series of main product shape
Formula.LED COB modules belong to personalized packing forms, are mainly the application product of some personalized cases and design and produce.
Compared with traditional LED SMD paster type encapsulations and high-power encapsulation, multiple chips can be directly encapsulated into Metal Substrate by COB encapsulation
Printed circuit board (PCB) MCPCB, directly radiated by substrate, the manufacturing process and its cost of support can not only be reduced, also had and reduce
The radiating advantage of thermal resistance.From the point of view of cost and application angle, COB turns into the main flow direction of following light fixtureization design.COB encapsulation
LED module is mounted with more pieces of LED chips on bottom plate, can not only improve brightness using more pieces of chips, additionally aid and realize LED
The reasonable disposition of chip, the input current amount of single led chip is reduced to ensure high efficiency.And this area source can be very big
Expand the area of dissipation of encapsulation in degree, make heat be easier to conduct to shell.
The COB packaging technologies commonly used at present in industry are as follows：First non-die bond bonding wire substrate surface along die bond bonding wire
Edges of regions uses box dam glue box dam, and the purpose of box dam is in order to which fluorescent colloid does not outflow during follow-up sealing, plays gear glue
Effect；Next fixed luminescence chip, using metal wire welding chip, finally seals fluorescent glue.But this method is comparatively laborious, encloses
Dam and sealing adhesive process automaticity are very low, and input is artificial relatively more, and yields control is more difficult, therefore, energy on domestic market
The encapsulation enterprise of volume production COB light source is few.
A kind of LED module COB packaging technologies, including step are disclosed in the A of Chinese invention patent application CN 103943756
Suddenly：S1, die bond bonding wire is carried out on the substrate for be provided with hole for injecting glue；S2, the substrate is fixed on injecting glue counterdie；S3, lead to
Cross accurate injecting glue syringe needle and carry out injecting glue to the hole for injecting glue；S4, after colloid solidification, the substrate is carried out from mold forming.Should
Patent of invention improves the box dam and sealing link of traditional COB packaging technologies, eliminates box dam technique, improves production efficiency.
One kind is disclosed in the A of Chinese invention patent application CN 103219452 and realizes LED height using three layers of organosilicon material
The method for packing of light emission rate, LED encapsulation is from inside to outside using three layers of encapsulation.First layer 6-7um fluorescent material and DOW CORNING OE-
6550 organic silica gels are well mixed by molar concentration for 0.109-0.123mol/L, bondline thickness 0.4-0.6mm, 100-160
DEG C baking 20-60 minutes solidify.The second layer is 0.0034- by molar concentration with 6-7um fluorescent material and organic silica gel
0.0037mol/L is well mixed, bondline thickness 0.2-0.4mm.Third layer SHIN-ETSU HANTOTAI's organic silica gel, bondline thickness 0.5-
1.5mm.LED encapsulation are carried out using three layers of organic silica gel, the refractive index of each layer encapsulating material shape from inside to outside in the technical scheme
Into graded, traditional single stack package is reduced due to refringence total reflection phenomenon caused greatly, luminous flux is improved, increases and
Angular.
But it is the research carried out from the injection process of COB encapsulation in above-mentioned technical literature, improves, be not directed to
The improvement of fluorescent powder coating technique.
Research is found, in conventional package, fluorescent material uses short-distance type smoke mostly, i.e. fluorescent material is directly coated at chip
Periphery.This coating technique has two kinds of techniques, and a kind of is common bracket LED chip package：The fluorescent glue of excess is not added with controlling
System ground embedding is into reflector, to reach the effect for sending white light；This technique primary disadvantage is that expend a large amount of fluorescent material, and
And fluorescent material is caused to have a strong impact on the uniformity of white light LED color temperature, cause the bright of white light LEDs in the skewness of chip circumference
Degree and hot spot can not all produce a desired effect.Another technique is then controlled slightly by the coating to fluorescent material, only in chip week
Coating fluorescent material is enclosed, but due to not preferable technique, frequently results in phosphor powder layer in uneven thickness, in irregular shape.Pass
The fluorescent material coating method of system also implies that light is sent from chip and touches fluorescent material, it is this go out optical mode have two kinds of shortcomings：
(1) some light is directly reflected back chip by fluorescent material, and this part light has upset the light that chip is sent.(2) chip heating is direct
Conduction accelerates the heating of fluorescent material, directly infringement reduces the fluorescent material life-span, causes LED integrity problem to phosphor powder layer.
As can be seen here, to solve the heat dissipation problem in LED structure, break through the bottleneck of industry development, its fundamental way is
Encapsulating structure is improved, carries out supporting thermal management scheme.
The content of the invention
For above-mentioned deficiency of the prior art, present invention is primarily intended to disclose a kind of LED COB encapsulating structures and
Its technique, mould, the encapsulating structure and technique can overcome the defect that directly coating fluorescent material causes not on chip in the prior art
Good the problem of exciting, and fluorescent material bear the integrity problem caused by heat so that the LED of technique encapsulation can be real
Existing low thermal resistance specular removal.
To achieve the above object, technical scheme disclosed by the invention is：A kind of COB envelopes of the LED of low thermal resistance specular removal
Assembling structure, the COB encapsulating structures include：Substrate, lead, at least one chip unit on substrate；The lead connects
Connect the chip in the chip unit；The COB encapsulating structures also include fluorescence silica gel layer, and the fluorescence silica gel layer is located at described
At least one airtight cavity is formed on substrate between the substrate, chip unit is coated on interior by the airtight cavity；It is described glimmering
Light layer of silica gel thickness is uniform.
Preferably, the fluorescence silica gel layer is provided with multiple hemisphere cavity.
Preferably, the COB encapsulating structures also include box dam glue, and the box dam glue is by the fluorescence silica gel layer and the base
The contact site of plate is closely connected.
Preferably, the thickness of the fluorescence silica gel layer is between 0.2mm-0.8mm.
Preferably, the position undulate structure of the fluorescence silica gel layer covering chip.
Preferably, the outline of the fluorescence silica gel layer is in convex arc semiglobe.
Preferably, the distance between described fluorescence silica gel layer and chip are between 1mm-5mm.
Preferably, the spacing between the adjacent chips is between 0.3mm-3mm.
The invention also discloses a kind of packaging technology of COB encapsulating structures, the packaging technology comprises the following steps：
(1) fixed chip on substrate, and by lead welding chip, completing substrate makes；
(2) it will add in dispensing spraying machine after fluorescent material and organic silica gel uniformly mixing, will be mixed using dispensing spraying machine
Thing is uniformly injected in mould, and baking 30-60 minutes solidify under 120-160 DEG C of temperature conditionss after matched moulds, is solidified and is obtained from after mould
To fluorescence silica gel layer；
(3) fluorescence silica gel layer is placed on the substrate that step (1) makes and coats the chip on substrate, then use box dam
Glue fixes fluorescence silica gel layer with substrates into intimate.Preferably, DOW CORNING OE-6550 organic silica gels are used in the present invention.
Preferably, in the packaging technology, the fluorescent material is mixed with organic silica gel by molar concentration 0.10-0.19mol/l
Close.
The invention also discloses a kind of fluorescent powder silica gel layer being used in above-mentioned packaging technology to prepare mould, the mould bag
Male model and master mold are included, the master mold is provided with some re-entrant cavity templates, and the male model is provided with several spills with master mold
The template of cavity corresponding convex structure one by one；Gap after concave-convex cavity matched moulds is between 0.4-0.5mm.
The fluorescent powder silica gel layer of solid-state is fabricated separately out by using mould for the design of the invention, then by fluorescence
Powder layer of silica gel is covered on COB substrates, and LED chip and lead are all made reprisals, and is overcome direct on chip in the prior art
Coating fluorescent material causes bad the problem of exciting；And it is at regular intervals between fluorescent powder silica gel layer and LED chip, also overcome glimmering
Light powder bears integrity problem caused by heat.Silicon substrate step is used in technical solution of the present invention, appropriate dispensing is simultaneously made partly
Spherical approximate conformal fluorescent glue coating, coats different from traditional brimmer phosphor gel, improves COB light source light extraction efficiency and one
Cause property.
In addition, fluorescent powder silica gel layer of the present invention can form closed cavity between COB substrates, and each is closed
A LED core blade unit can be accommodated in cavity, and is mutually isolated between the cavity wall of each closed cavity, is only connected from bottom
Connect, to ensure the independence of chip each LED unit after cutting.
The beneficial effects of the invention are as follows：Patent of the present invention overcome in the prior art on chip directly coating fluorescent material make
The integrity problem caused by heat is born into bad the problem of exciting, and fluorescent material so that the LED energy of technique encapsulation
Enough realize low thermal resistance specular removal.The preparation method can also be applied to produce phosphor powder layer in batches, avoid conventional batch from sealing fluorescent material
Chip carries out a large amount of repetition operations for dispensing glue one by one in layer process, improves LED packaging efficiencies.The process makes fluorescent adhesive layer will
The top of LED chip and sidepiece wrap up, and the light that LED chip sidepiece is sent also is excited by fluorescent adhesive layer, improve the profit of light
With rate.
Brief description of the drawings
Fig. 1 is the structural representation of the preferred embodiment of encapsulating structure one of the present invention；
Fig. 2 is the inside chip layout of COB encapsulating structures in a preferred embodiment of the present invention；
Fig. 3 is the structural representation of fluorescent powder silica gel layer covering chip in a preferred embodiment of the present invention；
Fig. 4 is Fig. 3 another diagram；
Fig. 5 is the structural representation for the substrate that chip is provided with another preferred embodiment of the present invention；
Fig. 6 is the structural representation that fluorescent powder silica gel layer is provided with Fig. 5.
Embodiment
Presently preferred embodiments of the present invention is described in detail below in conjunction with the accompanying drawings, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art, apparent is clearly defined so as to be made to protection scope of the present invention.
Accompanying drawing 1-6 is refer to, the embodiment of the present invention includes：
Embodiment 1：Accompanying drawing 1 is refer to, present embodiment discloses a kind of COB of LED of low thermal resistance specular removal to encapsulate knot
Structure, the COB encapsulating structures include：Fluorescence silica gel layer 1, substrate 2, more leads 4, some chips 3 on substrate 2；More
Lead 4 connects adjacent chips 3 respectively；Fluorescence silica gel layer 1 forms at least one airtight cavity on substrate 2 between substrate 2, should
Chip 3 and lead 4 are coated on interior by airtight cavity；Each part thickness of fluorescence silica gel layer 1 is uniform.
Embodiment 2：The present embodiment and the difference of embodiment 1 are, in the present embodiment, fluorescence silica gel layer 1 covers core
The position undulate structure of piece, as shown in Figure 1.
Embodiment 3：It refer to Fig. 2, Fig. 3, Fig. 2 is the encapsulating structure for the COB that pcb board is provided with chip, and mark 6 is in figure
PCB, mark 7 is heat-conducting glue in figure.The present embodiment and the difference of embodiment 1 be, refer to Fig. 3, glimmering in the present embodiment
Light layer of silica gel 1 is in dome-type cavity body structure, and fluorescence silica gel layer 1 is covered on the substrate 2 provided with some chips 3, and some chips 3 enclose
It is uniformly distributed around a center, the inwall of fluorescence silica gel layer 1 and the distance R of the center are between 1mm-5mm.
The design can cover in LED chip in the closed cavity between fluorescence silica gel layer and substrate, and between LED chip
Leave space, realize long distance formula excitated fluorescent powder, overcome in the prior art on chip directly coating fluorescent material cause not
Good the problem of exciting, solve in common process fluorescence coating too close to chip and caused by fluorescent material bear that heat is more to ask
Topic.
Embodiment 4：The present embodiment and the difference of embodiment 1 are, in the present embodiment, the COB encapsulating structures are also
Including box dam glue 5, the contact site of fluorescence silica gel layer 1 and substrate 2 is closely connected by box dam glue 5.
Embodiment 5：The present embodiment and the difference of embodiment 4 are, in the present embodiment, the thickness of fluorescence silica gel layer 1
Between 0.2mm-0.8mm.
Embodiment 6：The present embodiment and the difference of embodiment 4 are, in the present embodiment, between the adjacent chips
Spacing is between 0.3mm-3mm.
Embodiment 7：Accompanying drawing 2-6 is refer to, present embodiment discloses a kind of COB of LED of low thermal resistance specular removal encapsulation
Structure, the COB encapsulating structures include：Substrate 2, lead 4, the chip unit on substrate 2；Lead 4 connects chip unit
Interior chip 3；The COB encapsulating structures also include fluorescence silica gel layer 1, and fluorescence silica gel layer 1 is located on substrate 2 and 2 shapes of substrate
Into at least one airtight cavity, chip unit is coated on interior by the airtight cavity；1 each part thickness of fluorescence silica gel layer is uniform.
In the present embodiment, multiple hemisphere cavity can be provided with fluorescence silica gel layer 1, multiple hemisphere cavity and substrate 2 it
Between form multiple airtight cavities, so as to being applied to multiple chip units.
Accompanying drawing 5-6 is refer to, A represents a chip unit in accompanying drawing 5, and B represents another chip unit；A and B is the same as setting
On a substrate 2.Fluorescence silica gel layer 1 in accompanying drawing 6 is provided with two hemisphere cavity, is hemisphere cavity 10, dome-type respectively
Cavity 11, wherein hemisphere cavity 10 are covered on chip unit A, and hemisphere cavity 11 is covered on chip unit B, and dome-type
It is mutually isolated between the cavity wall of cavity 10 and hemisphere cavity 11, is only connected from bottom, ensures that each LED is mono- after chip cutting
The independence of member.
In the present embodiment, after fluorescence silica gel layer 1 is shaped by mould, directly make somebody a mere figurehead in the base provided with chip and lead
On plate, so as to solve the problems, such as in traditional handicraft because the irregular fluorescence coating of formation in uneven thickness causes.
Embodiment 8, the invention discloses a kind of packaging technology of COB encapsulating structures, the packaging technology includes following step
Suddenly：
(1) fixed chip on substrate, and by lead welding chip, completing substrate makes；
(2) it will add in dispensing spraying machine after fluorescent material and organic silica gel uniformly mixing, will be mixed using dispensing spraying machine
Thing is uniformly injected in mould, and baking 30-60 minutes solidify under 120-160 DEG C of temperature conditionss after matched moulds, is solidified and is obtained from after mould
To fluorescence silica gel layer；
(3) fluorescence silica gel layer is placed on the substrate that step (1) makes and coats the chip on substrate, then use box dam
Glue fixes fluorescence silica gel layer with substrates into intimate.
The difference of embodiment 9, the present embodiment and embodiment 7 is that fluorescent material is massaged with organic silica gel in step (2)
Your concentration 0.10-0.19mol/l is mixed.
Embodiment 10, the invention discloses a kind of packaging technology of COB encapsulating structures, the packaging technology includes following step
Suddenly：
(1) fixed chip on substrate, and by lead welding chip, completing substrate makes；
(2) it will add in dispensing spraying machine after fluorescent material and organic silica gel uniformly mixing, will be mixed using dispensing spraying machine
Thing is uniformly injected in mould, and baking 40-60 minutes solidify under 120-150 DEG C of temperature conditionss after matched moulds, is solidified and is obtained from after mould
To fluorescence silica gel layer；
The mould used in the step includes male model and master mold, and master mold is provided with some re-entrant cavity templates, set on male model
There is the template of several re-entrant cavities with master mold corresponding convex structure one by one；Gap after concave-convex cavity matched moulds is in 0.4-
Between 0.5mm；
(3) fluorescence silica gel layer is placed on the substrate that step (1) makes and coats the chip on substrate, then use box dam
Glue fixes fluorescence silica gel layer with substrates into intimate.
Embodiment 11, a kind of fluorescent powder silica gel layer prepare mould, and the mould includes male model and master mold, and master mold is provided with some
Re-entrant cavity template, male model are provided with the template of several re-entrant cavities with master mold corresponding convex structure one by one；Concave-convex
Gap after cavity matched moulds is between 0.4-0.5mm.
Embodiment 12：Present embodiment discloses a kind of COB encapsulating structures of the LED of low thermal resistance specular removal, COB encapsulation
Structure includes：Fluorescence silica gel layer 1, substrate 2, more leads 4, some chips 3 on substrate 2；More leads 4 connect respectively
Adjacent chips 3；Fluorescence silica gel layer 1 is located on substrate 2 forms multiple hemisphere cavity between substrate 2, in each hemisphere cavity
A chip unit is at least coated, each chip unit includes chip 3 and lead 4；Each part thickness of fluorescence silica gel layer 1 is equal
It is even.In the present embodiment, the thickness of fluorescence silica gel layer 1 is between 0.2mm-0.6mm；The distance between fluorescence silica gel layer 1 and chip
Between 1mm-4mm；Spacing in same hemisphere cavity between adjacent chips is between 0.3mm-2mm.
Embodiment 13：Present embodiment discloses a kind of COB encapsulating structures of the LED of low thermal resistance specular removal, COB encapsulation
Structure includes：Fluorescence silica gel layer 1, substrate 2, more leads 4, some chips 3 on substrate 2；More leads 4 connect respectively
Adjacent chips 3；Fluorescence silica gel layer 1 is located on substrate 2 forms multiple hemisphere cavity between substrate 2, in each hemisphere cavity
A chip unit is at least coated, each chip unit includes chip 3 and lead 4；Each part thickness of fluorescence silica gel layer 1 is equal
It is even.In the present embodiment, the COB encapsulating structures also include box dam glue 5, and box dam glue 5 is by the contact with substrate 2 of fluorescence silica gel layer 1
Position is closely connected.
In the present embodiment, the thickness of fluorescence silica gel layer 1 is between 0.4mm-0.5mm；Between fluorescence silica gel layer 1 and chip
Distance is between 2mm-3mm；Spacing in same hemisphere cavity between adjacent chips is between 0.3mm-1mm.
Experimental example：Existing LED chip surface coating technique only proposes reduction fluorescent material dosage mostly in terms of improvement, and
When not proving the correlated colour temperature CCT approximately equals of product, whether output light energy or luminous efficiency are constant, the technology of the present invention side
Case will be accomplished that under defined colour temperature, reach the COB encapsulating structures of identical luminous flux and a large amount of reductions of fluorescent material usage amount
And its technique, shown by many experiments, under the output of same luminous flux and close colour temperature, according to the envelope of technical solution of the present invention
Assembling structure can save fluorescent material dosage up to 70%, as shown in table 1 below.
Table 1：Fluorescent powder silica gel layer packaging technology and conventional fluorescent powder gluing process Comparison study of the present invention
Embodiments of the invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this hair
The equivalent structure or equivalent flow conversion that bright specification and accompanying drawing content are made, or directly or indirectly it is used in other related skills
Art field, is included within the scope of the present invention.
Claims (10)
1. a kind of COB encapsulating structures of the LED of low thermal resistance specular removal, it is characterised in that the COB encapsulating structures include：Base
Plate, lead, at least one chip unit on substrate；The lead connects the chip in the chip unit；The COB
Encapsulating structure also includes fluorescence silica gel layer, and the fluorescence silica gel layer forms at least one on the substrate between the substrate
Chip unit is coated on interior by airtight cavity, the airtight cavity；The fluorescence silica gel thickness degree is uniform.
2. COB encapsulating structures according to claim 1, it is characterised in that the fluorescence silica gel layer is provided with multiple hemisphere
Cavity.
3. COB encapsulating structures according to claim 1 or 2, it is characterised in that the COB encapsulating structures also include box dam
The contact site of the fluorescence silica gel layer and the substrate is closely connected by glue, the box dam glue.
4. COB encapsulating structures according to claim 1 or 2, it is characterised in that the thickness of the fluorescence silica gel layer exists
Between 0.2mm-0.8mm.
5. COB encapsulating structures according to claim 1, it is characterised in that the position of the fluorescence silica gel layer covering chip
Undulate structure.
6. COB encapsulating structures according to claim 1, it is characterised in that the outline of the fluorescence silica gel layer is in convex
Arc semiglobe.
7. COB encapsulating structures according to claim 1 or 2, it is characterised in that between the fluorescence silica gel layer and chip
Distance is between 1mm-5mm.
A kind of 8. packaging technology of COB encapsulating structures according to claim 1, it is characterised in that the packaging technology bag
Include following steps：
(1) fixed chip on substrate, and by lead welding chip, completing substrate makes；
(2) will be added after fluorescent material and organic silica gel uniformly mixing in dispensing spraying machine, it is using dispensing spraying machine that mixture is equal
Even to be injected in mould, baking 30-60 minutes solidify under 120-160 DEG C of temperature conditionss after matched moulds, solidify glimmering from being obtained after mould
Light layer of silica gel；
(3) fluorescence silica gel layer is placed on the substrate that step (1) makes and coats the chip on substrate, then will with box dam glue
Fluorescence silica gel layer is fixed with substrates into intimate.
9. the packaging technology of COB encapsulating structures according to claim 8, it is characterised in that the fluorescent material and organosilicon
Glue is mixed by molar concentration 0.10-0.19mol/l.
10. the fluorescent powder silica gel layer in a kind of packaging technology according to claim 8 prepares mould, it is characterised in that institute
Stating mould includes male model and master mold, and the master mold is provided with some re-entrant cavity templates, and the male model is provided with several and mother
The template of the re-entrant cavity of mould corresponding convex structure one by one；Gap after concave-convex cavity matched moulds is between 0.4-0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710639403.4A CN107393912A (en) | 2017-07-31 | 2017-07-31 | The COB encapsulating structures and its technique, mould of a kind of low thermal resistance high light efficiency LED lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710639403.4A CN107393912A (en) | 2017-07-31 | 2017-07-31 | The COB encapsulating structures and its technique, mould of a kind of low thermal resistance high light efficiency LED lamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107393912A true CN107393912A (en) | 2017-11-24 |
Family
ID=60341456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710639403.4A Pending CN107393912A (en) | 2017-07-31 | 2017-07-31 | The COB encapsulating structures and its technique, mould of a kind of low thermal resistance high light efficiency LED lamp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107393912A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155106A (en) * | 2017-12-22 | 2018-06-12 | 珠海市大鹏电子科技有限公司 | A kind of length climbs the preparation process of electric light electric coupler |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010140416A1 (en) * | 2009-06-05 | 2010-12-09 | コニカミノルタオプト株式会社 | Method for producing glass member for wavelength conversion |
| CN201868472U (en) * | 2010-11-08 | 2011-06-15 | 大连路明发光科技股份有限公司 | Chip and powder separated light-emitting module for manufacture of high-power LEDs |
| CN103022325A (en) * | 2012-12-24 | 2013-04-03 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | LED packaging structure utilizing distant fluorescent powder layer and manufacturing method of LED packaging structure |
| JP2014039006A (en) * | 2012-02-27 | 2014-02-27 | Mitsubishi Chemicals Corp | Wavelength conversion member and semiconductor light-emitting device using the same |
| CN103928450A (en) * | 2014-04-08 | 2014-07-16 | 晶科电子（广州）有限公司 | Product for packaging LEDs with uniform light color and manufacturing method of product |
-
2017
- 2017-07-31 CN CN201710639403.4A patent/CN107393912A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010140416A1 (en) * | 2009-06-05 | 2010-12-09 | コニカミノルタオプト株式会社 | Method for producing glass member for wavelength conversion |
| CN201868472U (en) * | 2010-11-08 | 2011-06-15 | 大连路明发光科技股份有限公司 | Chip and powder separated light-emitting module for manufacture of high-power LEDs |
| JP2014039006A (en) * | 2012-02-27 | 2014-02-27 | Mitsubishi Chemicals Corp | Wavelength conversion member and semiconductor light-emitting device using the same |
| CN103022325A (en) * | 2012-12-24 | 2013-04-03 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | LED packaging structure utilizing distant fluorescent powder layer and manufacturing method of LED packaging structure |
| CN103928450A (en) * | 2014-04-08 | 2014-07-16 | 晶科电子（广州）有限公司 | Product for packaging LEDs with uniform light color and manufacturing method of product |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155106A (en) * | 2017-12-22 | 2018-06-12 | 珠海市大鹏电子科技有限公司 | A kind of length climbs the preparation process of electric light electric coupler |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW558775B (en) | Package of compound type LED | |
| CN103022325B (en) | The LED encapsulation structure of application long distance formula phosphor powder layer and method for making thereof | |
| CN103840071B (en) | A kind of LED lamp bar manufacture method and LED lamp bar | |
| CN104253194A (en) | Structure and method for packaging of chip-size white LED (light emitting diode) | |
| CN101592291A (en) | LED lamp preparation method that a kind of colour temperature is adjustable and LED lamp | |
| CN106972092B (en) | A kind of quantum spot white light LED of high-luminous-efficiency and preparation method thereof | |
| CN102683555A (en) | Packaging structure and packaging method for light-emitting diode | |
| CN103840063A (en) | LED package substrate and manufacturing method thereof | |
| CN105633248B (en) | LED lamp and preparation method thereof | |
| WO2009140829A1 (en) | A led lighting device with low attenuation and high luminous efficiency and manufacturing method thereof | |
| CN107910426B (en) | Magnetic fluorescent powder composite material and plane coating method thereof | |
| CN102185048A (en) | Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip | |
| CN101355132B (en) | encapsulation method of white light LED for improving facula | |
| CN107393912A (en) | The COB encapsulating structures and its technique, mould of a kind of low thermal resistance high light efficiency LED lamp | |
| JP2010206208A (en) | Light emitting diode package structure and manufacturing method therefor | |
| CN204732409U (en) | A kind of encapsulating structure of LED silk | |
| CN102738372A (en) | Novel LED (light emitting diode) integrated light source module and preparation method thereof | |
| CN206878028U (en) | A kind of 360 degree of uniformly light-emitting white light LEDs elements | |
| CN204927327U (en) | UV packaging structure of SMDLED lamp pearl | |
| CN111341897A (en) | LED packaging structure, manufacturing method thereof and LED flash lamp | |
| CN111341898A (en) | LED packaging structure, manufacturing method thereof and LED flash lamp | |
| CN110767792A (en) | COB light source and preparation method thereof | |
| CN202972699U (en) | Parabolic aluminum reflector (PAR) lamp | |
| CN206194787U (en) | Reduce structure of skew of LED colour and blue light harm | |
| CN111933759A (en) | Method for preparing surface light source COB by adopting two-color CSP chip and surface light source COB |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171124 |