CN107393900B - The embedded type TSV adapter plate structure of pole multilayer wiring - Google Patents

The embedded type TSV adapter plate structure of pole multilayer wiring Download PDF

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Publication number
CN107393900B
CN107393900B CN201710668543.4A CN201710668543A CN107393900B CN 107393900 B CN107393900 B CN 107393900B CN 201710668543 A CN201710668543 A CN 201710668543A CN 107393900 B CN107393900 B CN 107393900B
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wiring
pinboard
plate body
switching
switching plate
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CN107393900A (en
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明雪飞
朱家昌
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CETC 58 Research Institute
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CETC 58 Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4839—Assembly of a flat lead with an insulating support, e.g. for TAB
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

The present invention relates to a kind of adapter plate structure, the embedded type TSV adapter plate structure of especially a kind of pole multilayer wiring belongs to the technical field of integrated antenna package.According to technical solution provided by the invention, the embedded type TSV adapter plate structure of the pole multilayer wiring, including switching plate body；Wiring switching board slot is recessed in the pinboard body, the setting wiring pinboard in wiring switching board slot, pole multilayer wiring is provided on the wiring pinboard, wiring pinboard by pole multilayer wiring with switching plate body upper surface pinboard on again wiring layer be electrically connected, on the pinboard again wiring layer by be filled in the filling connector of through-hole in pinboard body with wiring layer is electrically connected again under the pinboard of switching plate body lower surface, under the pinboard again wiring layer be equipped with several soldered balls, the soldered ball with wiring layer is electrically connected again under pinboard.The present invention can effectively increase the wiring number of plies, realize highdensity wafer-level package and system encapsulation, securely and reliably.

Description

The embedded type TSV adapter plate structure of pole multilayer wiring
Technical field
The present invention relates to a kind of adapter plate structure, the embedded type TSV adapter plate structure of especially a kind of pole multilayer wiring belongs to In the technical field of integrated antenna package.
Background technique
As electronic product develops to the directions such as miniaturization, high-performance, highly reliable, level of integrated system is also increasingly improved.? In this case, the characteristic size and the line width of interconnection line by further reducing integrated circuit propose high performance mode by material Expect the limitation of physical characteristic and apparatus and process, traditional Moore's Law has been difficult to continue to develop.
TSV (ThroughSiliconVia, through silicon via) technology can carry out chip and chip, chip and substrate perpendicular interconnection, Information transmission path is effectively shortened, and can realize more multi-functional, higher power, more exits with package area.TSV skill Art is to break through the effective way of Moore's Law, it is considered to be the dominant technology of Future high-density encapsulation field.Currently, TSV technology Mainly apply it first is that preparation TSV interposer substrate, encapsulates for chip-scale encapsulation and system.
TSV pinboard is the essential elements for realizing high-density packages, and multiple chips can be made to be directly realized by interconnection.With partly leading The promotion of body chip performance, the interconnection density between chip also constantly increase, force and be routed (RDL) layer again on TSV pinboard Number is continuously increased.But conventional RD L technology of preparing is limited by technological level, prepares multilayer (4 layers or more) wiring layer again It is difficult, it has been unable to satisfy the growth requirement of the high interconnection density of TSV pinboard.So high in order to meet current microelectronics system The growth requirement of performance, high interconnection density needs the novel TSV adapter plate structure for developing a kind of pole multilayer wiring.
Summary of the invention
The purpose of the present invention is overcoming the deficiencies in the prior art, a kind of embedded type TSV of pole multilayer wiring is provided Adapter plate structure, it is compact-sized, the wiring number of plies can be effectively increased, realizes highdensity wafer-level package and system encapsulation, Securely and reliably.
According to technical solution provided by the invention, a kind of preparation method of the embedded type TSV pinboard of pole multilayer wiring, packet Include switching plate body；Wiring switching board slot is recessed in the pinboard body, setting wiring turns in wiring switching board slot Fishplate bar, is provided with pole multilayer wiring on the wiring pinboard, and wiring pinboard passes through on pole multilayer wiring and switching plate body Wiring layer is electrically connected again on the pinboard on surface, on the pinboard again wiring layer by being filled in filling out for through-hole in pinboard body Fill connector with transfer plate body lower surface pinboard under again wiring layer be electrically connected, if under the pinboard again wiring layer equipped with Dry soldered ball, the soldered ball with wiring layer is electrically connected again under pinboard；
The wiring pinboard is adhesively fixed by pinboard cohesive body in wiring switching board slot；
The material of the switching plate body includes silicon or glass.
Advantages of the present invention: the wiring pinboard 3 with pole multilayer wiring 4 is embedded in switching plate body 1, to can increase The wiring number of plies of switching plate body makes up the deficiency that TSV switching plate body is limited by the RDL wiring number of plies, can meet high-performance, Gao Ji The application demand encapsulated at the micro-system of density；By in the prefabricated TSV interposer substrate with through-hole and wiring switching board slot The TSV switching plate body for meeting performance requirement of upper interception certain size, can be improved encapsulation yield, compact-sized, securely and reliably.
Detailed description of the invention
Fig. 1 is the schematic diagram that switching plate body is prepared using interposer substrate by the present invention.
Fig. 2 is that present invention wiring interposer substrate obtains the schematic diagram of wiring pinboard.
Fig. 3 is that the pinboard of the invention that will be routed is placed in the intracorporal schematic diagram of pinboard.
Fig. 4 is that the present invention prepares on pinboard under wiring layer, pinboard again the signal after wiring layer again on switching plate body Figure.
Fig. 5 is that the schematic diagram after soldered ball is prepared in the present invention.
Description of symbols: 1- switching plate body, 2- through-hole, 3- wiring pinboard, the pole 4- multilayer wiring, 5- pinboard bonding Wiring layer, 7- soldered ball, 8- filling connector, wiring layer, 10- interposer substrate, 11- again under 9- pinboard again on body, 6- pinboard Wiring switching board slot and 12- are routed interposer substrate.
Specific embodiment
Below with reference to specific drawings and examples, the invention will be further described.
It is as shown in Figure 5: in order to effectively increase the wiring number of plies, realize highdensity wafer-level package and system encapsulation, The present invention includes switching plate body 1；Wiring switching board slot 11 is recessed in the switching plate body 1, in wiring switching board slot Setting wiring pinboard 3 in 11, is provided with pole multilayer wiring 4 on the wiring pinboard 3, and wiring pinboard 3 passes through extremely more Layer wiring 4 with switching 1 upper surface of plate body pinboard on again wiring layer 6 be electrically connected, on the pinboard again wiring layer 6 pass through fill out Fill switching 1 inner via hole 2 of plate body filling connector 8 with transfer 1 lower surface of plate body pinboard under again wiring layer 9 be electrically connected, Under the pinboard again wiring layer 9 be equipped with several soldered balls 7, the soldered ball 7 with wiring layer 9 is electrically connected again under pinboard.
Specifically, the depth of wiring switching board slot 11 is less than the thickness of switching plate body 1, and through-hole 2 penetrates through specially switching plate body 1, Through-hole 2 is located at the outer ring of wiring switching board slot 11, and wiring pinboard 3 is embedded in switching plate body 1 by wiring switching board slot 11, The thickness for being routed pinboard 3 is less than the depth of wiring switching board slot 11, when pole multilayer wiring 4 is set on wiring pinboard 3, It is consistent with the wiring switching depth of board slot 11 to be routed the sum of pinboard 3 and the thickness of pole multilayer wiring 4, thus in switching plate body After preparing on pinboard wiring layer 6 again on 1, wiring pinboard 3 can be with 6 electricity of wiring layer again on pinboard by pole multilayer wiring 4 Connection.
The wiring pinboard 3 is adhesively fixed by pinboard cohesive body 5 in wiring switching board slot 11, and pinboard bonds Body 5 can use existing common binding material, and wiring pinboard 3 is fixed in wiring switching board slot 11 as long as being able to achieve, Reach and is fixedly connected with switching plate body 1.After connector 8 is filled in through-hole 2, turned by filling connector 8 and being able to achieve Under fishplate bar again wiring layer 9 with wiring layer 6 is electrically connected again on pinboard, pass through soldered ball 7 and realize drawing plate body 1 signal of transferring Out.
As shown in fig. 1~fig. 5, the TSV adapter plate structure of above structure can be prepared by following concrete technologies, tool Body step are as follows:
Step 1 provides interposer substrate 10, and the material of the interposer substrate 10 includes but is not limited to the materials such as silicon, glass, The switching plate body 1 of pitch needed for being made in interposer substrate 10 of routine TSV technique, depth-to-width ratio；The through-hole of the switching plate body 1 2 perforation interposer substrates 10.
After obtaining required switching plate body 1 in interposer substrate 10, using conventional etching technics in each switching plate body 1 The switching board slot 11 of wiring needed for upper preparation, as shown in Figure 1；In figure, obtain several being in array distribution in interposer substrate 10 Transfer plate body 1, the size of wiring switching board slot 11 according to specific it needs to be determined that, the depth of wiring switching board slot 11 is no more than turn The thickness of fishplate bar body 1.After obtaining wiring switching board slot 11 in each switching plate body 1, intercepted by conventional scribing process To independent switching plate body 1.
Step 2 is provided wiring interposer substrate 12, and is made in wiring interposer substrate 12 using conventional wafer grade CMOS technology Make pole multilayer wiring 4, the wiring number of plies and wiring rule of pole multilayer wiring 4 can be determined according to signal interconnection design requirement, The wiring pinboard 3 with pole multilayer wiring 4 is obtained by conventional scribing process；Wiring pinboard 3 is shown in Fig. 2 to be routed It is in the schematic diagram of array distribution in interposer substrate 12.
Step 3 transfers the embedment of the wiring pinboard 3 with pole multilayer wiring 4 in plate body 1, and wiring pinboard 3 is by turning Fishplate bar cohesive body 5 is adhesively fixed with switching plate body 1, and the material of pinboard cohesive body 5 includes but is not limited to adhesive glue, alloy sheet etc. Common binding material, as shown in Figure 3.In Fig. 3, filling connection can be obtained in the through-hole 2 for plate body 1 of transferring by fill process Body 8, filling connector 8 fill up through-hole 2, and filling connector 8, tool can be specifically obtained using the common technique of the art Details are not described herein again for body technology process.
Step 4 passes through photoetching but is not desired to be satisfied with the technique of photoetching, manufactures in upper surface, the lower surface of above-mentioned switching plate body 1 Wiring layer (RDL) is again to get to wiring layer 9 again under wiring layer 6 and pinboard again on pinboard, wiring layer 6 again on pinboard By filling connector 8 with wiring layer 9 is electrically connected again under pinboard, wiring layer 6 is covered on pole multilayer wiring 4 again on pinboard On, and be electrically connected with pole multilayer wiring 4, as shown in Figure 4.
Step 5 plants the array soldered ball 7 that switching partitioned signal extraction is realized in the production of ball technique using standard.The big rootlet of soldered ball 7 Depending on the diameter and pitch of TSV pinboard surface pads.The material of soldered ball 7 includes but is not limited to tin-lead, Xi Yin and tin silver The materials such as copper, as shown in Figure 5.It is embedded in switching plate body 1 by the wiring pinboard 3 with pole multilayer wiring 4, increases and turn The wiring number of plies of fishplate bar body 1, to realize that the encapsulation of the higher microelectronics system of routing complexity is integrated.

Claims (1)

1. a kind of preparation method of the embedded type TSV pinboard of pole multilayer wiring, including switching plate body (1)；It is characterized in that: institute It states and is recessed with wiring switching board slot (11) in switching plate body (1), the setting wiring pinboard in wiring switching board slot (11) (3), be provided with pole multilayer wiring (4) on the wiring pinboard (3), wiring pinboard (3) by pole multilayer wiring (4) with Wiring layer (6) is electrically connected again on the pinboard of switching plate body (1) upper surface, and wiring layer (6) passes through filling again on the pinboard Wiring layer (9) again under the filling connector (8) of switching plate body (1) inner via hole (2) and the pinboard of switching plate body (1) lower surface Electrical connection, wiring layer (9) is equipped with several soldered balls (7) again under the pinboard, wiring layer again under the soldered ball (7) and pinboard (9) it is electrically connected；
The wiring pinboard (3) is adhesively fixed by pinboard cohesive body (5) in wiring switching board slot (11)；
The material of switching plate body (1) includes silicon or glass；
The TSV adapter plate structure is prepared by following concrete technologies, specific steps are as follows:
Step 1 provides interposer substrate (10), pitch, depth-to-width ratio needed for being made on interposer substrate (10) of routine TSV technique Switching plate body (1)；The through-hole (2) of switching plate body (1) penetrates through interposer substrate (10)；
After obtaining required switching plate body (1) on interposer substrate (10), using conventional etching technics in each switching plate body (1) required wiring switching board slot (11) is prepared on, and several switching plate bodys in array distribution are obtained on interposer substrate (10) (1), the size of wiring switching board slot (11) according to specific it needs to be determined that, the depth of wiring switching board slot (11), which is no more than, transfers The thickness of plate body (1)；After obtaining wiring switching board slot (11) in each switching plate body (1), cut by conventional scribing process Obtain independent switching plate body (1)；
Step 2 is provided wiring interposer substrate (12), and is made in wiring interposer substrate (12) using conventional wafer grade CMOS technology To make pole multilayer wiring (4), the wiring number of plies and wiring rule of pole multilayer wiring (4) are determined according to signal interconnection design requirement, The wiring pinboard (3) with pole multilayer wiring (4) is obtained by conventional scribing process；
Step 3 will have in wiring pinboard (3) embedment switching plate body (1) of pole multilayer wiring (4), and wiring pinboard (3) is logical It crosses pinboard cohesive body (5) to be adhesively fixed with switching plate body (1), be obtained in the through-hole (2) of switching plate body (1) by fill process It fills connector (8), through-hole (2) is filled up in filling connector (8)；
Step 4, the upper surface of above-mentioned switching plate body (1), lower surface manufacture again wiring layer (RDL) to get on pinboard again Wiring layer (9) again under wiring layer (6) and pinboard, wiring layer (6) passes through filling connector (8) and pinboard again on pinboard Under again wiring layer (9) be electrically connected, wiring layer (6) is covered on pole multilayer wiring (4) again on pinboard, and with pole multilayer wiring (4) it is electrically connected；
Step 5 plants the array soldered ball (7) that switching partitioned signal extraction is realized in the production of ball technique, the big rootlet of soldered ball (7) using standard Depending on the diameter and pitch of TSV pinboard surface pads.
CN201710668543.4A 2017-08-08 2017-08-08 The embedded type TSV adapter plate structure of pole multilayer wiring Active CN107393900B (en)

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CN113257786B (en) * 2021-06-17 2021-11-02 浙江集迈科微电子有限公司 Multilayer wiring adapter plate for radio frequency transmission and preparation method thereof
CN113471161A (en) * 2021-06-28 2021-10-01 浙江集迈科微电子有限公司 Multilayer wiring adapter plate for radio frequency transmission and preparation method thereof
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