CN107393794B - A kind of gas-cluster ion sources production method and device - Google Patents
A kind of gas-cluster ion sources production method and device Download PDFInfo
- Publication number
- CN107393794B CN107393794B CN201710664910.3A CN201710664910A CN107393794B CN 107393794 B CN107393794 B CN 107393794B CN 201710664910 A CN201710664910 A CN 201710664910A CN 107393794 B CN107393794 B CN 107393794B
- Authority
- CN
- China
- Prior art keywords
- cluster
- gas flow
- pulsed
- ion sources
- dissociator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 150000002500 ions Chemical class 0.000 claims abstract description 64
- 238000000605 extraction Methods 0.000 claims abstract description 26
- 239000002245 particle Substances 0.000 claims abstract description 18
- 230000007935 neutral effect Effects 0.000 claims abstract description 17
- 230000001133 acceleration Effects 0.000 claims abstract description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 13
- 239000010935 stainless steel Substances 0.000 claims description 13
- 150000001518 atomic anions Chemical class 0.000 claims description 11
- 229910052582 BN Inorganic materials 0.000 claims description 10
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 239000007921 spray Substances 0.000 abstract description 2
- 238000010884 ion-beam technique Methods 0.000 description 5
- 230000005389 magnetism Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/026—Cluster ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physical Vapour Deposition (AREA)
- Particle Accelerators (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The present invention provides a kind of gas-cluster ion sources production methods, it is controlled using pulse control valve and sprays pulsed gas flow beam, pulsed gas flow beam passes through beam splitter, neutral cluster particle and part is monatomic passes through beam splitter, pulsed gas flow beam carries out ionization by electro-dissociator, pulsed gas flow beam continues through extraction electrode, initial acceleration is obtained in extraction electrode and is converged forms convergent conical air flow stream, conical air flow stream passes through E type permanent magnet after continuing through accelerator and lens, forms cluster ions beam.Invention also provides a kind of gas-cluster ion sources generation devices, including pulse control valve and the beam splitter being sequentially arranged along pulsed air flow stream emission direction, electro-dissociator, extraction electrode, accelerator, lens and E type permanent magnet.The present invention can make neutral cluster ionize in the collision with electronics under normal temperature and certain air pressure, form gas-cluster ion, after the extraction electrode the effects of under, pool cluster ions beam.
Description
Technical field
The present invention relates to a kind of gas-cluster ion sources production method and devices, belong to ion implantation device technical field.
Background technique
Ion implantation technique is the semiconductor doping and process for modifying surface that eighties of last century grows up, and passes through change
Material surface ingredient, structure, and then optimize material surface property, or even obtain certain new excellent properties.It is i.e. certain with having
The ion beam bombardment material of energy and dosage, ion beam due to by atom, molecule in material shock or other are physico
Effect gradually loses energy, reduces speed, eventually settles at the position not far apart from material surface.But common ion note
Enter to use monatomic ion, there are channelling effects in injection process, can be because when monatomic ion is injected along the crystal orientation of crystal
It is incident on very deep position for less collision occurs with lattice atoms, trailing phenomenon is generated, junction depth is caused to increase.Channel effect
The presence answered hinders the modified desired realization on an ultra shallow surface.Solution is first is that reduce injection ion energy, or change
Incident inclination angle.Second is that using multi-atomic ion or cluster ions, therefore cluster ions beam technology is paid attention to.
Gas cluster ion beam equipment can produce the multi-atomic ion that atomicity reaches thousands of or even up to ten thousand, but whole sets
Standby very accurate complexity, needs the perfect cooperation of all parts that can just obtain expected results.And ion source is exactly core technology, from
Component it is available whether be directly related to produced by cluster ions superiority and inferiority (energy, dosage), thus, it is necessary to design intense beam
The ion source of stream, low energy.On the one hand it requires to generate sufficient amount of cluster particle, on the other hand to design the electronics of high current
Rifle is allowed to sufficiently collide with cluster particle, makes cluster particle ionization, turn agglomerate ion beam.
Summary of the invention
In order to solve the deficiencies in the prior art, the present invention provides a kind of gas-cluster ion sources production method and device,
Can be used for generating and accelerating thermoelectron, be adequately ionized neutral cluster particle, obtain cluster ions, then extraction pole (also
Referred to as extraction electrode), accelerator and E type permanent magnet effect under, numerous cluster ions are gathered into cluster ions beam.
The present invention is that technical solution used by solving its technical problem is: providing a kind of gas-cluster ion sources generation
Method, comprising the following steps:
(1) pulsed gas flow beam is sprayed using pulse control valve control, the pulsed gas flow beam includes two different
Conical flow, one of conical flow are made of the monatomic of divergence expression, another conical flow is by concentrating on pulsed gas
The neutral cluster particle of a fluid stream central axis is constituted；
(2) pulsed gas flow beam passes through beam splitter, and exclusive segment is monatomic, and neutral cluster particle and other part are monatomic
Pass through beam splitter；
(3) pulsed gas flow beam passes through electro-dissociator, generates thermoelectron, the neutral cluster grain of pulsed gas flow beam in electro-dissociator
Sub- ionization becomes cluster ions, and monatomic ionization is at monatomic ion；
(4) pulsed gas flow beam continues through extraction electrode, and initial acceleration is obtained in extraction electrode and convergence forms convergent circle
Conical flow beam；
(5) conical air flow stream continue through accelerator and lens further speed up after by E type permanent magnet, by E
When the magnetic field of type permanent magnet, the cluster ions of monatomic ion and atomicity less than or equal to 100 in conical air flow stream exist
Deviate under the action of Loulun magnetism, cluster ions of the atomicity greater than 100 maintain original route to pass through magnetic field, form cluster ions
Beam.
Invention also provides a kind of gas-cluster ion sources generation device based on the method, including for generating
The pulse control valve of pulsed gas flow beam, and the beam splitter, the electro-dissociator, suction that are sequentially arranged along pulsed air flow stream emission direction
Pole, accelerator, lens and E type permanent magnet.
The pulse control valve is equipped with ultrasonic nozzle and positioning and collimator apparatus.
The minimum-value aperture of the beam splitter is 1.4~2mm.
The beam splitter uses pure aluminum material, overlay coating Ni.
The electro-dissociator uses central axis and the consistent cylindrical stainless steel grid screen shell of pulsed gas flow beam emission direction,
It is internally provided with two cathodes and an anode between described two cathodes, cathode uses tungsten wire, cylindrical stainless steel
The both ends of grid screen shell pass through boron nitride insulating disc respectively and are connected with the diaphragm of ground connection.
Anode voltage is up to 40mA relative to the high 60~200V of cathode, anode current, and cathode current is up to 1.4A.
The extraction electrode is center axis and the consistent cylinder of pulsed gas flow beam emission direction, and electro-dissociator anode voltage is Uan
When, extraction electrode institute making alive Uan–Uan/20。
The accelerator is made of the three-level electrostatic lenses arranged along pulsed air flow stream emission direction, in-between electrostatic
Lens are added with negative voltage -7~12kV, other two electrostatic lenses ground connection.
The long 50mm of E type permanent magnet, is made of iron core and two magnetic poles, and the center magnetic field is 50~150mT.
The present invention is based on beneficial effects possessed by its technical solution to be:
(1) gas-cluster ion sources production method of the invention can be realized under normal temperature and certain air pressure, so that
By the neutral cluster of conical nozzle, ionized in the collision with electronics, formed gas-cluster ion, after extraction electrode, plus
Under fast device and the effect of E type permanent magnet, cluster ions beam is pooled；
(2) in gas-cluster ion sources generation device of the invention, electro-dissociator cathode material is tungsten wire, for radiating thermoelectricity
Son, thermoelectron from cathode reach anode during with cluster particle encounter, so that it is ionized into cluster ions, entire electro-dissociator by
Cylindrical stainless steel grid screen package, grid screen can prevent thermoelectron from escaping, it made to come into full contact with cluster, and electro-dissociator both ends pass through nitridation
Boron insulating disc is connected with the light bar of ground connection, and boron nitride insulating disc is for being isolated electro-dissociator and diaphragm, while sustainable anode, cathode
With stainless steel grid screen；
(3) in gas-cluster ion sources generation device of the invention, extraction electrode is cylindrical, for converging cluster ions with shape
At convergent conical ion beam；
(4) in gas-cluster ion sources generation device of the invention, the long 50mm of E type permanent magnet, by iron core and two Co-
Sm magnetic pole is constituted, the center magnetic field about 150mT, plays mass separation according to Lorentz force magnet, monatomic ion with gently
Cluster deviates, and weight cluster almost maintains original route to pass through magnetic field, finally pools cluster ions beam.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of gas-cluster ion sources generation device of the invention.
In figure: 1- pulse control valve, 2- ultrasonic nozzle, 3- positioning and collimator apparatus, 4- cluster air-flow, the monatomic taper of 5-
Air-flow, 6- beam splitter, 7- diaphragm, 8- pass through the pulsed gas flow beam of electro-dissociator, 9- electro-dissociator, 10- cylinder stainless steel grid screen
Shell, 11- cathode, 12- anode, 13- the first boron nitride insulating disc, 14- the second boron nitride insulating disc, 15- extraction electrode, 16- accelerate
Device, the first electrostatic lenses of 17-, the second electrostatic lenses of 18-, 19- third electrostatic lenses, 20-E type permanent magnet.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
The present invention provides a kind of gas-cluster ion sources production methods, comprising the following steps:
(1) pulsed gas flow beam is sprayed using pulse control valve control, the pulsed gas flow beam includes two different
Conical flow, one of conical flow are made of the monatomic of divergence expression, another conical flow is by concentrating on pulsed gas
The neutral cluster particle of a fluid stream central axis is constituted；
(2) pulsed gas flow beam passes through beam splitter, and exclusive segment is monatomic, and neutral cluster particle and other part are monatomic
Pass through beam splitter；
(3) pulsed gas flow beam passes through electro-dissociator, generates thermoelectron, the neutral cluster grain of pulsed gas flow beam in electro-dissociator
Sub- ionization becomes cluster ions, and monatomic ionization is at monatomic ion；
(4) pulsed gas flow beam continues through extraction electrode, and initial acceleration is obtained in extraction electrode and convergence forms convergent circle
Conical flow beam；
(5) conical air flow stream continue through accelerator and lens further speed up after by E type permanent magnet, by E
When the magnetic field of type permanent magnet, the cluster ions of monatomic ion and atomicity less than or equal to 100 in conical air flow stream exist
Deviate under the action of Loulun magnetism, cluster ions of the atomicity greater than 100 maintain original route to pass through magnetic field, form cluster ions
Beam.
Invention also provides a kind of gas-cluster ion sources generation device based on the method, referring to Fig.1, including
For generating the pulse control valve 1 of pulsed gas flow beam, and the beam splitter being sequentially arranged along pulsed air flow stream emission direction
6, electro-dissociator 9, extraction electrode 15, accelerator, lens 16 and E type permanent magnet 20.
The pulse control valve 1 is equipped with ultrasonic nozzle 2 and positioning and collimator apparatus 3.
The minimum-value aperture of the beam splitter 6 is 1.4~2mm.
The beam splitter 6 uses pure aluminum material, overlay coating Ni.
The electro-dissociator 9 is using the consistent cylindrical stainless steel grid screen shell of central axis and pulsed gas flow beam emission direction
10, it is internally provided with two cathodes 11 and an anode 12 between described two cathodes 11, cathode 11 uses tungsten wire, circle
The both ends of cylindrical stainless steel grid screen shell 10 pass through a boron nitride insulating disc respectively and are connected with the diaphragm 7 of ground connection, both ends difference
For the first boron nitride insulating disc 13 and the second boron nitride insulating disc 14.
Anode voltage is relative to the high 60~200V of cathode, and for anode current maximum up to 40mA, cathode current maximum is reachable
1.4A。
The extraction electrode is center axis and the consistent cylinder of pulsed gas flow beam emission direction, and electro-dissociator anode voltage is Uan
When, extraction electrode institute making alive Uan–Uan/20。
The lens use the three-level electrostatic lenses by arranging along pulsed air flow stream emission direction, are followed successively by first electrode
17, second electrode 18 and third electrode 19, first electrode be equipped with accelerator, in-between second electrode added with negative voltage -7~
12kV, first electrode and second electrode are grounded.
The long 50mm of E type permanent magnet, is made of iron core and two magnetic poles, and the center magnetic field is 50~150mT.
The course of work of gas-cluster ion sources generation device are as follows:
(1) under normal temperature and certain air pressure (T=300K, Psource=1~10bar), pulse control valve control is utilized
System sprays pulsed hyperbar air flow stream, and pulsed gas flow beam is tapered, can be divided into two parts, a portion distribution compared with
Extensively, it is mainly made of monatomic, is monatomic conical flow 5, another part is distributed Relatively centralized, closer to central axis, serves as reasons
Concentrate on the cluster air-flow 4 that the neutral cluster particle of pulsed gas flow beam center axis is constituted；
(2) pulsed gas flow beam passes through beam splitter 6, when air-flow enters beam splitter from the minimum of aperture, is only distributed concentration
Cluster can just pass through, can exclusive segment it is monatomic, neutral cluster particle and other part are monatomic by beam splitter,
By the cluster of beam splitter still can in cone, and with electro-dissociator center overlapping of axles；
(3) pulsed gas flow beam passes through electro-dissociator 9, and cathode material is tungsten wire in electro-dissociator, for radiating thermoelectron.Anode
Voltage is relative to the high 60-200V of cathode, for accelerating thermoelectron until its energy reaches the ionization energy of cluster particle, thermoelectron from
With cluster particle encounter during cathode arrival anode, it is made to be ionized into cluster ions；Anode current about 40mA, cathode current
1.4A.Entire electro-dissociator is wrapped up by cylindrical stainless steel grid screen, and grid screen can prevent thermoelectron from escaping, it is made to come into full contact with cluster；
Electro-dissociator both ends are connected by boron nitride insulating disc with the light bar of ground connection, and boron nitride insulating disc is used to that electro-dissociator and diaphragm to be isolated,
Supporting anodes, cathode and stainless steel grid screen simultaneously；The neutral cluster particle ionization of pulsed gas flow beam becomes cluster ions, Dan Yuan
Sub- ionization is at monatomic ion；
(4) extraction electrode 15 is continued through by the pulsed gas flow beam 8 of electro-dissociator, initial acceleration is obtained in extraction electrode and converged
Combinate form is at convergent conical air flow stream；
(5) conical air flow stream is continued through by E type permanent magnet after accelerator is further speeded up, permanent by E type
The cluster ions (weight cluster) of monatomic ion and atomicity less than or equal to 100 when the magnetic field of magnet, in conical air flow stream
Deviate under the action of Loulun magnetism, cluster ions (light cluster) of the atomicity greater than 100 maintain original route to pass through magnetic field, are formed
Cluster ions beam.
A kind of gas-cluster ion sources production method and device provided by the invention, can be in normal temperature and certain air pressure
Under so that ionize in the collision with electronics by the neutral cluster of conical nozzle, form gas-cluster ion, after
Under extraction electrode, accelerator and the effect of E type permanent magnet, cluster ions beam is pooled.
Claims (9)
1. a kind of gas-cluster ion sources production method, it is characterised in that the following steps are included:
(1) pulsed gas flow beam is sprayed using pulse control valve control, the pulsed gas flow beam includes two different tapers
Air-flow, one of conical flow are made of the monatomic of divergence expression, another conical flow is by concentrating on pulsed gas flow beam
The neutral cluster particle of central axis is constituted；
(2) pulsed gas flow beam passes through beam splitter, and exclusive segment is monatomic, neutral cluster particle and other part is monatomic passes through
Beam splitter；
(3) pulsed gas flow beam passes through electro-dissociator, generates thermoelectron in electro-dissociator, the neutral cluster particle of pulsed gas flow beam from
Chemical conversion is cluster ions, and monatomic ionization is at monatomic ion；The electro-dissociator is sprayed using central axis and pulsed gas flow beam
The consistent cylindrical stainless steel grid screen shell in direction is internally provided with two cathodes and one between described two cathodes
Anode, cathode use tungsten wire, and the both ends of cylindrical stainless steel grid screen shell pass through the diaphragm of boron nitride insulating disc and ground connection respectively
It is connected；
(4) pulsed gas flow beam continues through extraction electrode, and initial acceleration is obtained in extraction electrode and convergence forms convergent cone
Air flow stream；
(5) conical air flow stream continue through accelerator and lens further speed up after by E type permanent magnet, forever by E type
When the magnetic field of long magnet, the cluster ions of monatomic ion and atomicity less than or equal to 100 in conical air flow stream are in Lip river logical sequence
Deviate under the action of magnetic force, cluster ions of the atomicity greater than 100 maintain original route to pass through magnetic field, form cluster ions beam.
2. a kind of gas-cluster ion sources generation device based on claim 1 the method, it is characterised in that: including for producing
The pulse control valve of raw pulsed gas flow beam, and be sequentially arranged along pulsed air flow stream emission direction beam splitter, electro-dissociator,
Extraction electrode, accelerator, lens and E type permanent magnet.
3. gas-cluster ion sources generation device according to claim 2, it is characterised in that: the pulse control valve is equipped with
Ultrasonic nozzle and positioning and collimator apparatus.
4. gas-cluster ion sources generation device according to claim 2, it is characterised in that: the minimum aperture of the beam splitter
Diameter is 1.4~2mm.
5. gas-cluster ion sources generation device according to claim 2, it is characterised in that: the beam splitter uses fine aluminium
Material, overlay coating Ni.
6. gas-cluster ion sources generation device according to claim 2, it is characterised in that: the electro-dissociator uses center
Axis and the consistent cylindrical stainless steel grid screen shell of pulsed gas flow beam emission direction, are internally provided with two cathodes and a position
Anode between described two cathodes, cathode use tungsten wire, and the both ends of cylindrical stainless steel grid screen shell pass through nitridation respectively
Boron insulating disc is connected with the diaphragm of ground connection.
7. gas-cluster ion sources generation device according to claim 6, it is characterised in that: anode voltage is relative to cathode
High 60~200V, anode current are up to 40mA, and cathode current is up to 1.4A.
8. gas-cluster ion sources generation device according to claim 2, it is characterised in that: the extraction electrode be center axis with
The consistent cylinder of pulsed gas flow beam emission direction, electro-dissociator anode voltage are UanWhen, extraction electrode institute making alive Uan–Uan/20。
9. gas-cluster ion sources generation device according to claim 2, it is characterised in that: the E type permanent magnet is long
50mm is made of iron core and two magnetic poles, and the center magnetic field is 50~150mT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710664910.3A CN107393794B (en) | 2017-08-07 | 2017-08-07 | A kind of gas-cluster ion sources production method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710664910.3A CN107393794B (en) | 2017-08-07 | 2017-08-07 | A kind of gas-cluster ion sources production method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107393794A CN107393794A (en) | 2017-11-24 |
| CN107393794B true CN107393794B (en) | 2019-09-10 |
Family
ID=60344057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710664910.3A Active CN107393794B (en) | 2017-08-07 | 2017-08-07 | A kind of gas-cluster ion sources production method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107393794B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109115660A (en) * | 2018-08-23 | 2019-01-01 | 金华职业技术学院 | A kind of particle imaging method |
| CN108972230B (en) * | 2018-09-07 | 2020-11-27 | 中国工程物理研究院激光聚变研究中心 | Optical element processing device and processing method |
| CN109413835A (en) * | 2018-10-31 | 2019-03-01 | 宜昌后皇真空科技有限公司 | A kind of method and device for the method generating transition metal positive ion beam |
| CN109786204B (en) * | 2019-01-18 | 2021-01-26 | 武汉江海行纳米科技有限公司 | Method for leading out ion beam current by using gas cluster sputtering target and ion source |
| CN113458876A (en) * | 2021-06-21 | 2021-10-01 | 武汉大学深圳研究院 | Cluster ion beam surface polishing method with cluster energy gradually reduced |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5814194A (en) * | 1994-10-20 | 1998-09-29 | Matsushita Electric Industrial Co., Ltd | Substrate surface treatment method |
| US20110240602A1 (en) * | 2010-03-30 | 2011-10-06 | Tel Epion Inc. | High-voltage gas cluster ion beam (gcib) processing system |
| US10181402B2 (en) * | 2010-08-23 | 2019-01-15 | Exogenesis Corporation | Method and apparatus for neutral beam processing based on gas cluster ion beam technology and articles produced thereby |
| GB2484488B (en) * | 2010-10-12 | 2013-04-17 | Vg Systems Ltd | Improvements in and relating to ion guns |
| KR102467978B1 (en) * | 2014-08-05 | 2022-11-16 | 텔 에피온 인크 | Gcib nozzle assembly |
-
2017
- 2017-08-07 CN CN201710664910.3A patent/CN107393794B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107393794A (en) | 2017-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107393794B (en) | A kind of gas-cluster ion sources production method and device | |
| JP2001502468A (en) | Ion gun | |
| CN106847661B (en) | A kind of plasma source and coating machine | |
| CN106057614B (en) | A kind of cold-cathode Penning ion source | |
| JP2011529612A (en) | Neutral particle generator | |
| CN111852803B (en) | Mixed effect annular ion thruster based on segmented anode | |
| TW201346969A (en) | Method and apparatus for generating high current negative hydrogen ion beam | |
| JPS59232420A (en) | Dry etching apparatus | |
| CN204497191U (en) | A kind of Kaufman power supply with anti-static coating | |
| CN108193174B (en) | The high vacuum electric arc arc stabilizer and sputtering method of heavy caliber truncated cone-shaped target | |
| CN108914091A (en) | A kind of improved anode leafing component | |
| CN107749388B (en) | A kind of ion source structure of achievable electron beam hits ionization and surface ionization | |
| CN209357691U (en) | A kind of novel ion source | |
| CN202150989U (en) | Improved ion source system used in cyclotron | |
| CN205944024U (en) | Cold cathode penning ion source | |
| CN204497189U (en) | A kind of carbon nanotube cold cathode Kaufman ion source device | |
| JPS6094725A (en) | Dry etching device | |
| CN114258182A (en) | Cusp field ion source and ion beam generating method | |
| CN202487529U (en) | High-valence ion source modulating device | |
| CN203039993U (en) | Electron load suppression type high voltage accelerating tube | |
| CN106498360B (en) | Ion forms container and ion source | |
| CN102933020A (en) | Improved ion source system of cyclotron | |
| WO2023169135A1 (en) | Ion generation device for straight tube square electromagnetic ion implantation equipment | |
| CN106887374B (en) | A kind of ion implantation device | |
| CN104735897B (en) | Electrocurtain accelerator, receiving pole and electronics accelerated method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20190808 Address after: 518101 2nd Floor, Building 5, 8th Road, Yangyong Industrial Zone, Songgang Street, Baoan District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Jianghaihang Nanotechnology Co.,Ltd. Address before: Room 103-3, 1st floor, Putian Science Park Building, 20 Dayuan Road, Donghu New Technology Development Zone, Wuhan City, Hubei Province Applicant before: WUHAN FEIANCI PHOTOELECTRIC TECHNOLOGY CO.,LTD. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200102 Address after: 443500, No. 88, development avenue, innovation industrial park, Yichang, Hubei, Changyang Patentee after: YICHANG HOUHUANG VACUUM TECHNOLOGY Co.,Ltd. Address before: 518101 2nd Floor, Building 5, 8th Road, Yangyong Industrial Zone, Songgang Street, Baoan District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Jianghaihang Nanotechnology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211228 Address after: 430070 room 1-102, special zone, building 1, Wuhan Putian Science Park, No. 20, University Park Road, Donghu New Technology Development Zone, Wuhan, Hubei Province Patentee after: Wuhan newfeige Nano Technology Co.,Ltd. Address before: 443500 Development Avenue, Changyang Innovation Industrial Park, Yichang City, Hubei Province, 88 Patentee before: YICHANG HOUHUANG VACUUM TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220714 Address after: 430000 room 1, floor 3, unit 1, building 1, zijinghuayuan, No. 29 Zisha Road, Wuchang District, Wuhan City, Hubei Province Patentee after: Wuhan houhuangyuan New Energy Technology Co.,Ltd. Address before: 430070 room 1-102, special zone, building 1, Wuhan Putian Science Park, No. 20, University Park Road, Donghu New Technology Development Zone, Wuhan, Hubei Province Patentee before: Wuhan newfeige Nano Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220907 Address after: Room C203, Cetus, Software Park, No. 111-12 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province 214115 Patentee after: Wuxi New Feige Technology Co.,Ltd. Address before: 430000 room 1, floor 3, unit 1, building 1, zijinghuayuan, No. 29 Zisha Road, Wuchang District, Wuhan City, Hubei Province Patentee before: Wuhan houhuangyuan New Energy Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right |