CN106887374B - A kind of ion implantation device - Google Patents
A kind of ion implantation device Download PDFInfo
- Publication number
- CN106887374B CN106887374B CN201710007968.0A CN201710007968A CN106887374B CN 106887374 B CN106887374 B CN 106887374B CN 201710007968 A CN201710007968 A CN 201710007968A CN 106887374 B CN106887374 B CN 106887374B
- Authority
- CN
- China
- Prior art keywords
- ion
- electrode system
- extraction electrode
- magnetic field
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1475—Scanning means magnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/152—Magnetic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Abstract
The present invention provides a kind of ion implantation device, and equipped with the ion source for generating ion and the extraction electrode system for drawing ion beam, the electrode plate of the extraction electrode system is equipped with ion beam outlet；It is characterized in that：The outer wall of extraction electrode system is provided with spiral winding, and the spiral winding is continually fed into direct current, is formed along the magnetic field in ion beam current direction；The magnetic field intensity in the magnetic field meets the diameter or width that the diameter that the ion of the ion beam moves in a circle under the action of Lorentz force is less than outlet on the electrode plate of extraction electrode system；Spiral winding is arranged by the outer wall in extraction electrode system in the present invention, make the component velocity in ion vertical magnetic field direction in by magnetic field Lorentz force acted on, effectively lasting transverse shifting can not be generated in extraction electrode system, and dirt is led to the problem of on electrode plate to overcome ion beam bombardment.
Description
Technical field
The present invention relates to ion implantation technique fields, and in particular to a kind of ion implantation device applied to glass substrate.
Background technology
Ion implantation apparatus is common implantation equipment in semiconductor devices manufacture, and ion beam is drawn usually using direct current,
And to ion accelerate (beamacceleration) after, to the substrate of process chamber irradiate ion beam.In the prior art, four electrode extraction systems pair are generally utilized
Ion beam is drawn and is accelerated, still, as shown in Figure 1, ion in the ion beam due to itself warm-up movement or from
It is mutually exclusive between son, ion itself the existing initial velocity perpendicular to lead direction when the ion being caused to be drawn from ion source
Degree so that there are certain angles of divergence for the ion beam in four electrode extraction systems；The part ion 11 in ion beam is caused to be beaten
On electrode plate 12.
When the ion implanting object is fluoro plasma or boron plasma, ion implanting object will be in extraction electrode system
Electrode plate on deposition formed insulation fluoride or boride, thicken with the deposition of the insulant, subsequently impinge upon the position
The charge for the ion set will be increasingly difficult to discharge, thus the surface of fluoride formed charge accumulation, the insulation it is dirty
And on the one hand charge accumulation can cause ion implantation device to be abnormal electric discharge increase, seriously affect the normal operation of equipment,
On the other hand, the educt beaming flow of ion beam will be caused unstable, ion implanting homogeneity is made to decline and be unable to reach desired effects.
Therefore, it is necessary to invent a kind of ion implantation device to beat on electrode plate to solve ion beam, accumulation forms dirty problem.
Invention content
In view of the above shortcomings of the prior art, the present invention provides a kind of ion implantation device, by extraction electrode system
Outer wall spiral winding is set, make the component velocity in ion vertical magnetic field direction in by magnetic field Lorentz force acted on, drawing electricity
Effectively lasting transverse shifting can not be generated in electrode systems, and dirt is generated on electrode plate to overcome ion beam bombardment
Problem.
To solve the above problems, the technical solution adopted by the present invention is：
The present invention provides a kind of ion implantation device, equipped with for generating ion ion source and for drawing ion beam
The electrode plate of extraction electrode system, the extraction electrode system is equipped with ion beam outlet；It is characterized in that：Extraction electrode system
The outer wall of system is provided with spiral winding, and the spiral winding is continually fed into direct current, is formed along the magnetic field in ion beam current direction.
Specifically, the magnetic field intensity in the magnetic field meets the ion of the ion beam and does circumference under the action of Lorentz force
The diameter of movement is less than the diameter or width of outlet on the electrode plate of extraction electrode system.
Specifically, the extraction electrode system is four electrode extraction electrode systems.
Specifically, the spiral winding extends to the other end in the outer wall of extraction electrode system close to one end of ion source.
Specifically, the spiral winding extraction electrode system outer wall in the direction of the clock or counterclockwise around the home.
Specifically, the spiral winding is passed through direct current forward or backwards.
The beneficial effects of the present invention are：A kind of ion implantation device provided by the invention, by extraction electrode system
Outer wall spiral winding is set, and be continually fed into direct current in the spiral winding, formed along the magnetic field in ion beam current direction, made
Ion in the ion beam perpendicular to the direction of the component velocity of magnetic direction under the action of the Lorentz force in the magnetic field
Persistently changed, it is effectively lasting to make the component velocity in ion vertical magnetic field direction that can not be generated in extraction electrode system
Transverse shifting avoids ion beam from being banged because of diverging thus in the diameter or width for the outlet that ion beam is limited in electrode plate
It hits and generates dirt on electrode plate, ensure that the normal operation of ion implantation device so that the ion beam homogeneity of extraction is preferable.
Description of the drawings
Fig. 1 is that the extraction electrode system intermediate ion of the prior art is beaten and forms dirty structural schematic diagram on electrode plate；
Fig. 2 is a kind of ion implantation device first structure schematic diagram of the present invention；
Fig. 3 is a kind of the second structural schematic diagram of ion implantation device of the present invention.
Specific implementation mode
Below in conjunction with attached drawing, technical scheme of the present invention is clearly described, described embodiment is only
A part of the embodiment of the present invention, instead of all the embodiments.
The embodiment of the present invention provides a kind of ion implantation device, as shown in Fig. 2, a kind of ion provided in an embodiment of the present invention
Injection device is equipped with the ion source 1 for generating ion and the extraction electrode system 3 for drawing ion beam 2, the extraction electricity
Electrode systems are four electrode extraction electrode systems, including accelerate electrode 31, extraction electrode 32, inhibit electrode 33, grounding electrode 34, institute
The electrode plate for stating extraction electrode system is equipped with ion beam outlet 35；
As shown in figure 3, in embodiments of the present invention, the outer wall of the extraction electrode system 3 is provided with spiral winding 4, institute
It states spiral winding 4 and is continually fed into direct current, formed along the magnetic field in ion beam current direction.In the present embodiment, the spiral winding
Extraction electrode system outer wall in the direction of the clock around the home, and be continually fed into forward dc electricity.
In embodiments of the present invention, spiral winding 4 is arranged by the outer wall in extraction electrode system 3, and in the spiral
Coil 4 is continually fed into direct current, is formed along the magnetic field in ion beam current direction so that the ion vertical magnetic field side in the ion beam
To the direction of component velocity persistently changed under the action of the Lorentz force in the magnetic field, to make ion vertical magnetic field direction
Component velocity effectively lasting transverse shifting can not be generated in extraction electrode system, to which ion beam is limited in outlet
Diameter or width in, avoid divergence of ion beam and bombard and generate dirt on the electrode.
Specifically, the magnetic field intensity in the magnetic field meets the ion of the ion beam and does circumference under the action of Lorentz force
The diameter of movement is less than the diameter or width of outlet 35 on the electrode plate of extraction electrode system.
Assuming that ion velocity is V, vertical direction component velocity is V1, the maximum angle of divergence is φ, extraction electrode system
Potential difference is E, and ion band electricity is e, and the magnetic field intensity of mass of ion m, magnetic field are B, ion kinetic energy Ev, electrode system pair
It is E that ion, which does beneficence gross energy,e, ion circular motion radius is r, the ion beam outlet on the electrode plate of extraction electrode system
Diameter or width is R, then has：
Ev=Ee
Ee=E*e
r≤R
Therefore, the magnetic field intensity in magnetic field should meet：
Wherein, φ is up to 90 °, can obtain：
Therefore, in embodiments of the present invention, the magnetic field intensity in magnetic field meetsWhen, you can meet ion beam
The diameter that ion moves in a circle under the action of Lorentz force be less than extraction electrode system electrode plate on outlet 35 it is straight
Diameter or width.
Preferably, the extraction electrode system is four electrode extraction electrode systems.
The spiral winding extends to the other end in the outer wall of extraction electrode system close to one end of ion source.
The spiral winding extraction electrode system outer wall in the direction of the clock or counterclockwise around the home.
The spiral winding is passed through direct current forward or backwards.
Preferable embodiment that such as the above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by change, modification, substitute, combination, letter
Change, should be equivalent substitute mode, be included within the scope of the present invention.
Claims (5)
1. a kind of ion implantation device, equipped with the ion source for generating ion and the extraction electrode system for drawing ion beam
The electrode plate of system, the extraction electrode system is equipped with ion beam outlet；It is characterized in that：The outer wall of extraction electrode system is set
It is equipped with spiral winding, the spiral winding is continually fed into direct current, is formed along the magnetic field in ion beam current direction, the magnetic in the magnetic field
Field intensity meets the diameter that the ion of the ion beam moves in a circle under the action of Lorentz force and is less than extraction electrode system
Electrode plate on outlet diameter or width.
2. a kind of ion implantation device as described in claim 1, it is characterised in that：The extraction electrode system is that four electrodes draw
Go out electrode system.
3. a kind of ion implantation device as claimed in claim 2, it is characterised in that：The spiral winding is in extraction electrode system
Outer wall extend to the other end close to one end of ion source.
4. a kind of ion implantation device as claimed in claim 3, it is characterised in that：The spiral winding is in extraction electrode system
Outer wall in the direction of the clock or counterclockwise around the home.
5. a kind of ion implantation device as claimed in claim 4, it is characterised in that：The spiral winding is passed through forward or backwards
Direct current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007968.0A CN106887374B (en) | 2017-01-05 | 2017-01-05 | A kind of ion implantation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007968.0A CN106887374B (en) | 2017-01-05 | 2017-01-05 | A kind of ion implantation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106887374A CN106887374A (en) | 2017-06-23 |
| CN106887374B true CN106887374B (en) | 2018-08-17 |
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ID=59176233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710007968.0A Active CN106887374B (en) | 2017-01-05 | 2017-01-05 | A kind of ion implantation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106887374B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0582075A (en) * | 1991-09-20 | 1993-04-02 | Nissin Electric Co Ltd | Ion irradiation device |
| CN104520961A (en) * | 2012-06-14 | 2015-04-15 | 焊接研究院 | Plasma source apparatus and methods for generating charged particle beams |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4336780B2 (en) * | 2006-04-07 | 2009-09-30 | 国立大学法人京都大学 | Ion source |
-
2017
- 2017-01-05 CN CN201710007968.0A patent/CN106887374B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0582075A (en) * | 1991-09-20 | 1993-04-02 | Nissin Electric Co Ltd | Ion irradiation device |
| CN104520961A (en) * | 2012-06-14 | 2015-04-15 | 焊接研究院 | Plasma source apparatus and methods for generating charged particle beams |
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| Publication number | Publication date |
|---|---|
| CN106887374A (en) | 2017-06-23 |
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