CN113458876A - Cluster ion beam surface polishing method with cluster energy gradually reduced - Google Patents
Cluster ion beam surface polishing method with cluster energy gradually reduced Download PDFInfo
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Abstract
The invention relates to the field of cluster ion application, in particular to a cluster ion beam surface polishing method with cluster energy gradually reduced. In the process of polishing the target by cluster ion beams, holes with a hemispherical structure are generated on the surface of the target, for the target with consistent hardness, the higher the cluster energy is, the larger the diameter of the remained holes is, while the sputtering rate of low-energy clusters is too low, the surface bulges are difficult to remove, and the surface roughness of the target is difficult to achieve the expectation. When the method provided by the invention is used for polishing the target material, the target material is polished by adopting the cluster ion beams with the energy gradually reduced step by step, the high-energy cluster ion beams are adopted for the thin and high bulges on the target material, the medium-energy cluster ion beams are adopted for the wide and low bulges, and finally the low-energy cluster ion beams are used for removing the hole damage to the target material caused by the medium-energy cluster ion beams, so that the surface shape is optimized; for the targets with different roughness degrees, the decreasing gradient of the energy step decreasing of the cluster can be selected, the field requirement is met, and the polishing efficiency and the polishing effect are good.
Description
Technical Field
The invention relates to the field of cluster ion application, in particular to a cluster ion beam surface polishing method with cluster energy gradually reduced.
Background
The polishing technique is a processing method which reduces the roughness of the surface of a workpiece by utilizing the mechanical, chemical or electrochemical action so as to obtain a smooth and flat surface.
The traditional polishing process (mechanical polishing, chemical polishing, electrolytic polishing and laser polishing) is technically mature and has already been commercialized in China, but the traditional polishing process has the defect that the polishing effect is poor, the roughness can only be reduced to 10nm, and the traditional polishing process is not suitable for ultrahigh precision polishing of optical elements. The magnetorheological polishing technology, the precise curved surface air bag polishing technology and the computer numerical control grinding technology have high precision and technical requirements, and need experienced technicians to operate.
The interaction between the gas cluster ion monomer and the sample atom is in a high nonlinear relation, when the cluster ion bombards the surface of the material, the sputtering rate of the convex part of the material is far higher than that of the concave part, so that the convex part is eroded, the target material sputtered from the convex part follows the law of cosine, almost parallel to the surface of the target material is splashed out, and finally falls back to the concave part, so that the height difference between the convex part and the concave part is gradually reduced, and the flattening effect is achieved. Meanwhile, the cluster is large in size and contains hundreds of atoms, the average energy of each atom is only a few eV, cluster ions are difficult to implant, and the damage to the subsurface of the target material is particularly small.
However, when the cluster ions bombard the target material, the damage is inevitably left. The cluster ions with higher energy have higher energy density in the target collision area, and the temperature and the pressure are increased rapidly, so that the sputtering of atoms on the surface of the target is promoted, and the surface planarization speed is accelerated. Meanwhile, after a large amount of substances are sputtered from the surface of the sample, holes are left, the holes are of a hemispherical structure (also called hemispherical damage), the shape of the holes is similar to that of a donut, the middle of the holes is lower than the average surface of the target, but the edges of the holes can be built up by annular soil piles higher than the surface of the target, and the uneven shape of the holes, which is low in the middle and high in the edges, seriously damages the flat surface of the target. The resulting hole diameter follows this equation:
e is the cluster energy in eV, and B is the Brinell hardness of the sample.
Thus, for a target of consistent hardness, the higher the cluster energy, the larger the diameter of the remaining holes. These holes destroy the flat surface to a large extent, so that the surface roughness is limited to 1.0nm and is difficult to break through below 1.0 nm. If the cluster energy is lowered to obtain a flat surface, the polishing time is prolonged because the beam current is too low, and the sputtering rate of the low-energy cluster is too low, the surface protrusions are difficult to remove, and the final target surface has many particles and surface roughness is difficult to achieve.
Disclosure of Invention
The invention aims to provide a cluster ion beam surface polishing method with cluster energy gradually reduced aiming at the problems in the prior art.
The technical scheme of the invention is a cluster ion beam surface polishing method with cluster energy gradually reduced, which comprises the following steps:
s1, bombarding the target material with high-energy cluster ion beams with the energy of 12 keV-20 keV, and removing the fine and high bulges and the deep scratches;
s2, bombarding the target material with medium-energy cluster ion beams with energy of 6 keV-12 keV, and removing surface damages such as wide and short bulges, shallow scratches, holes left by high-energy clusters and the like;
s3, bombarding the target material with low-energy cluster ion beams with energy of 0.5 keV-6 keV, and removing surface damages such as holes left by the target material bombarded by the cluster ion beams with intermediate energy.
The method for generating the cluster ion beam comprises the steps of using inert gas as a source gas, adjusting the gas pressure of the source gas to be 0.2-1.2 MPa, and obtaining the gas cluster by the ultrasonic expansion principle of a nozzle, wherein the diameter of the nozzle is 50-150 microns; the method is characterized in that a tungsten filament heating discharge principle is utilized to enable neutral clusters to be ionized into cluster ions, the cluster ion energy is between 0.5keV and 20keV, the high-energy cluster ion energy is between 12keV and 20keV, the medium-energy cluster ion energy is between 6keV and 12keV, and the low-energy cluster ion energy is between 0.5keV and 6 keV.
The inert gas is Ne, Ar or Kr.
In addition, the cluster ion energies of the high-energy cluster ion beam to the low-energy cluster ion beam in steps S1, S2, and S3 are gradually decreased in a step-like manner, and the gradient of the decrease is in three modes, i.e., the same gradient, the decrease in the gradient, or the increase in the gradient.
Moreover, for the target with convex surface and less scratches, the polishing treatment is carried out by adopting a mode of gradient reduction of cluster ion energy degressive; and for the target with a convex surface and more scratches, polishing treatment is carried out by adopting a gradient constant mode of descending cluster ion energy.
The technical scheme provided by the invention has the beneficial effects that:
1. in order to overcome the limitation of the prior art of polishing the surface by a cluster ion bombardment method, a ladder-shaped energy and continuous energy mode is provided, large-scale columnar and conical upright objects and deep scratches on the surface of a target material are quickly removed by high-energy ions, the roughness is reduced to a certain level, and other ions such as wide and short bulges, shallow scratches, holes left by high-energy clusters and the like are removed by medium-low energy ions, so that the damage to the target material can be reduced, and the flat effect can be quickly achieved.
2. Compared with the traditional method of singly bombarding the high-energy clusters, the method can keep the high sputtering rate generated by the original high-energy clusters, and the low-energy clusters used in the middle and later stages of the ladder-shaped energy mode can effectively remove holes and the like left by the high-energy clusters, thereby further optimizing the surface morphology and reducing the surface roughness.
3. Compared with the traditional method of singly bombarding the low-energy cluster, the method can achieve the final flat surface, and meanwhile, the high-energy cluster used in the initial stage of the ladder-shaped energy mode has higher beam current and higher sputtering rate, can quickly remove large bulges and deep scratches which are difficult to eliminate of most low-energy clusters, and greatly shortens the polishing time.
4. The gradient of the cluster energy decreasing can be constant, reduced and increased, appropriate polishing parameters such as energy gradient, ion dose and the like can be selected according to the initial appearance and properties of the target, cluster ion beams with different energy levels and different energy amplitude gradients are correspondingly adopted according to different target roughness conditions, the polishing effect is better, and the roughness of the surface of the target can be broken through to be less than 1.0 nm.
Drawings
Fig. 1 is a schematic diagram of a stepped gradual decrease mode with constant cluster energy gradient.
Fig. 2 is a schematic diagram of a stepped gradual decrease mode of cluster energy gradient reduction.
Fig. 3 is a schematic diagram of a stepped gradual decrease mode of cluster energy gradient increase.
FIG. 4 is an AFM topography (size 1 μm × 1 μm) before and after 12keV single high energy cluster, 4keV single low energy cluster, 12-4keV ladder energy mode bombardment of N-type 4H-SiC (1000).
FIG. 5 is an AFM profile (size 5 μm. times.5 μm) before and after 12keV single high-energy cluster, 4keV single low-energy cluster, 12-4keV ladder energy mode bombardment of N-type 4H-SiC (1000).
FIG. 6 is an AFM profile (size 5 μm. times.5 μm) after bombardment of quartz glass with 7keV single high-energy clusters, 5keV single low-energy clusters, and 9-7-5-3-2keV ladder energy mode.
Description of reference numerals:
1: an initial morphology (size 1 μm × 1 μm) of N-type 4H-SiC (1000);
2: the N type 4H-SiC (1000) is subjected to 12keV single high-energy cluster bombardment and then is in a shape graph (the size is 1 mu m multiplied by 1 mu m);
2 a: the N-type 4H-SiC (1000) generates hemispherical damage (holes) after being bombarded by a single high-energy cluster with 12 keV;
2 b: a cross-sectional profile of a hemispherical damage (hole) generated after bombardment of a single high-energy cluster with 12keV of N-type 4H-SiC (1000);
3: the N type 4H-SiC (1000) is bombarded by a single low-energy cluster with 4keV and then is in a shape graph (the size is 1 mu m multiplied by 1 mu m);
4: the N type 4H-SiC (1000) is subjected to cluster bombardment by a 12-4keV ladder-shaped energy mode to form a morphology chart (the size is 1 mu m multiplied by 1 mu m);
5: an initial morphology (size 5 μm × 5 μm) of N-type 4H-SiC (1000);
6: the N type 4H-SiC (1000) is subjected to 12keV single high-energy cluster bombardment and then is in a shape graph (the size is 5 mu m multiplied by 5 mu m);
7: the N type 4H-SiC (1000) is bombarded by a single low-energy cluster with 4keV and then is in a shape graph (the size is 5 mu m multiplied by 5 mu m);
8: the N type 4H-SiC (1000) is subjected to cluster bombardment by a 12-4keV ladder-shaped energy mode to form a morphology graph (the size is 5 mu m multiplied by 5 mu m);
9: an initial morphology section profile diagram (dimension 5 μm × 5 μm) of N-type 4H-SiC (1000);
10: the N-type 4H-SiC (1000) is bombarded by single high-energy clusters with 12keV to form a shape cross section profile (the size is 5 mu m multiplied by 5 mu m);
11: the N-type 4H-SiC (1000) is bombarded by a single low-energy cluster with 4keV to form a shape cross section profile (the size is 5 mu m multiplied by 5 mu m);
12: the N-type 4H-SiC (1000) is subjected to cluster bombardment by a 12-4keV ladder energy mode to form a shape cross section profile (the size is 5 mu m multiplied by 5 mu m);
13: quartz glass initial topography (dimensions 5 μm × 5 μm);
14: a morphology (size 5 mu m multiplied by 5 mu m) of the quartz glass after 7keV single high-energy cluster bombardment;
15: a morphology (5 mu m multiplied by 5 mu m in size) of the quartz glass after being bombarded by a single low-energy cluster with 5 keV;
16: the quartz glass is subjected to cluster bombardment by a 9-7-5-3-2keV ladder-shaped energy mode to form a morphology chart (the size is 5 mu m multiplied by 5 mu m).
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and examples, and the present invention is not limited to the examples.
Example 1: theoretical method
A cluster ion beam surface polishing method with cluster energy gradually reduced in a step shape comprises the following steps:
s1, bombarding the target material with high-energy cluster ion beams with the energy of 12 keV-20 keV, and removing the fine and high bulges and the deep scratches;
s2, bombarding the target material with medium-energy cluster ion beams with energy of 6 keV-12 keV, and removing surface damages such as wide and short bulges, shallow scratches, holes left by high-energy clusters and the like;
s3, bombarding the target material with low-energy cluster ion beams with energy of 0.5 keV-6 keV, removing surface damages such as holes left by the target material bombarded by the cluster ion beams with intermediate energy, and optimizing the surface appearance.
The generation method of the cluster ion beam is that inert gas is used as (Ne, Ar, Kr) source gas, the gas pressure of the source gas is adjusted to be 0.2 MPa-1.2 MPa, and the gas cluster is obtained by the ultrasonic expansion principle of a nozzle, wherein the nozzle has the length of 50 mu m-150 mu m; the method is characterized in that neutral clusters are ionized into cluster ions by utilizing a tungsten filament heating discharge principle, the cluster ion energy is between 0.5keV and 20keV, mass separation is realized by utilizing different orbital radiuses of circular motion of cluster ions with different masses in a magnetic field, heavy clusters almost maintain the original linear motion, and light clusters and simple substance ions are deflected. The average size of the cluster is 500-5000 atoms, and the ion size of the cluster can be adjusted by adjusting the source gas pressure, the source gas and the diameter of the nozzle. Wherein the high energy cluster ion energy is between 12-20keV, the medium energy cluster ion energy is between 6-12keV, and the low energy cluster ion energy is between 0.5-6 keV.
The principle and the relevant contents of ultrasound dilation are explained in the literature "Materials processing by gas cluster ion beams" (Materials Science and Engineering R34 (2001) 231. sup. 295page) and "Design and experimental testing of a gas cluster ion accumulator" (Chinese Physics C Vol.41, No.8(2017) 087003).
The different cluster energies bombard the target material, and the advantages and disadvantages are as follows: the high-energy clusters bombard the target material, and can quickly remove fine and high bulges, deep scratches and the like. Compared with the medium-low energy cluster, the high-energy cluster has a much higher sputtering rate, and the sputtering rate of the convex part on the surface of the target is far higher than that of the concave part, the slope part and the plane part, so that the thin and high convex body is easier to sputter firstly when the high-energy cluster is irradiated. However, a large number of annular holes are formed on the surface of the target by the continuous high-energy clusters, and the secondary surface of the target is damaged; the target material is bombarded by the medium-energy clusters, and surface damages such as wide and short bulges, shallow scratches, holes left by the high-energy clusters and the like are removed. But the continuous medium-energy clusters still form annular holes on the surface of the target, but the depth and the diameter of the continuous medium-energy clusters are smaller than those generated by the high-energy clusters, so that the subsurface of the target is damaged to a certain extent; and the low-energy clusters bombard the target material, so that surface damages such as holes left by the clusters in the medium energy are removed, and the surface morphology is optimized.
In the cluster ion beam surface polishing method in which the cluster energy is gradually decreased in a step-like manner, in steps S1, S2 and S3, the cluster ion energy from the high-energy cluster ion beam to the low-energy cluster ion beam is gradually decreased in a step-like manner, and the gradient of the decreasing gradient has three modes, namely the same gradient, the gradient decrease or the gradient increase, which are shown in the constant attached drawing 1, the gradient decrease attached drawing 2 and the gradient increase attached drawing 3.
The constant gradient shows that the energy is gradually decreased by the constant delta E change quantity, the target materials are bombarded one by one, and the ion doses bombarded by all the energies are consistent.
Decreasing the gradient indicates that the energy will be at Δ E1、ΔE2、…、ΔEnAre sequentially decreased by Δ E1>ΔE2>…>ΔEnBombard the target one by one.
Increasing the gradient indicates that the energy will be at Δ E1、ΔE2、…、ΔEnAre sequentially decreased by Δ E1＜ΔE2＜…＜ΔEnBombard the target one by one.
The function of the high-energy clusters is to remove high and large bumps and deep scratches; the intermediate energy clusters are used for removing surface damages such as wide and short bulges, shallow scratches, holes left by the high energy clusters and the like; the low-energy cluster optimizes the surface morphology, removes surface damages such as holes left by the medium-energy cluster, and is the key for obtaining the final flat surface.
For the target with convex surface and less scratches, a ladder-shaped step-by-step decreasing mode of cluster energy gradient reduction is suitable to be adopted so as to prevent excessive high-energy cluster ions from damaging the secondary surface of the target.
For the target with convex surface and more scratches, a ladder-shaped step-by-step decreasing mode with constant cluster energy gradient is suitable, so that enough high-energy cluster ions can be ensured to remove original damage, and the low-energy cluster can be optimized for ion damage caused by the high-energy cluster.
The following are specific examples:
[ example 2 ]
Referring to fig. 4, by adjusting cluster energy, a single high-energy cluster of 12keV, a single low-energy cluster of 4keV and a ladder-shaped energy of 12-4keV are selected, and an energy step-by-step decreasing mode is selected to bombard the surface of N-type 4H-SiC (1000), and the surface morphology (the measurement range is 1 mu m multiplied by 1 mu m) before and after modification is compared (the ion dose of the cluster is 3 multiplied by 1016ions/cm 2). The method comprises the following steps:
(1) comparative sample 1: the surface appearance of the N-type 4H-SiC (1000) without cluster bombardment.
(2) Comparative sample 2: surface modification effect of 12keV single high-energy cluster on N-type 4H-SiC (1000). Inputting high-purity Ar gas, adjusting the source gas pressure to 11atm, obtaining Ar gas clusters (average size is 1000atoms/cluster) through a nozzle (diameter is 60 mu m), and ionizing neutral clusters into Ar cluster ions after heating a tungsten wire to discharge; the Ar cluster ions are accelerated in an electric field to obtain high energy of 12 keV. After magnetic separation, light clusters and simple substance ions are deflected, heavy clusters vertically bombard the surface of the N-type 4H-SiC (1000), and the cluster ion dose is 3 multiplied by 1016ions/cm 2.
(3) Comparative sample 3: surface modification effect of 4keV single low-energy cluster on N-type 4H-SiC (1000). Inputting high-purity Ar gas, adjusting the source gas pressure to 11atm, obtaining Ar gas clusters (average size is 1000atoms/cluster) through a nozzle (diameter is 60 mu m), and ionizing neutral clusters into Ar cluster ions after heating a tungsten wire to discharge; the Ar cluster ions are accelerated in the electric field to obtain a low energy of 4 keV. After magnetic separation, light clusters and simple substance ions are deflected, heavy clusters vertically bombard the surface of the N-type 4H-SiC (1000), and the cluster ion dose is 3 multiplied by 1016ions/cm 2.
(4) Target sample 4: 12-4keV ladder energy, namely the surface modification effect of an energy step-by-step decreasing mode on the N-type 4H-SiC (1000). Inputting high-purity Ar gas, adjusting the source gas pressure to 11atm, obtaining Ar gas clusters (average size is 1000atoms/cluster) through a nozzle (diameter is 60 mu m), and ionizing neutral clusters into Ar cluster ions after heating a tungsten wire to discharge; the Ar cluster ions are accelerated in an electric field to obtain high energy of 12 keV. After magnetic separation, light clusters and simple substance ions are deflected, heavy clusters vertically bombard the surface of the N-type 4H-SiC (1000), and the ion dose is 1.5 multiplied by 1016ions/cm 2. The accelerating voltage is adjusted again so that the low-energy cluster ions with cluster energy of 4keV and 4keV bombard the surface of the N-type 4H-SiC (1000) and the ion dose is 1.5 x 1016ions/cm 2.
(5) The comparison samples 1, 2 and 3 and the target sample 4 are measured by an Atomic Force Microscope (AFM), and the measurement range is smaller and is 1 mu m multiplied by 1 mu m, so that the specific appearance of the surface of the sample can be better observed. Compare 4 AFM images:
the root mean square roughness Rq of the surface of the comparative sample 1 is 1.20nm
Secondly, the root mean square roughness Rq of the surface of the comparison sample 2 is 1.05nm, the surface of the sample is hollow and hollow, SiC particles are large and loose, and the result shows that impurities such as dust and the like can be rapidly removed by a 12keV high-energy cluster, the roughness is reduced, but the high-energy cluster impacts the target material severely, and the temperature and the pressure of a collision area are increased sharply, so that holes are left on the surface of the target material and are subjected to plasma damage, and see holes 2a and hole cross-sectional views 2b (the inner diameter of each hole is 25nm, the outer diameter of each hole is 45nm and the depth of each hole is 4nm), so that the holes are in a hemispherical structure (also called hemispherical damage), the shape of each hole is similar to a donut, the middle of each hole is lower than the average surface of the target material, but the edge of each hole is higher than the annular soil pile on the surface of the target material, and the middle of each hole is low, and the uneven surface of the target material is seriously damaged;
thirdly, the root mean square roughness Rq of the surface of the comparison sample 3 is 1.01nm, SiC particles on the surface of the sample are much finer than those of the comparison sample 2, but fine high-dirty dust (shown as white dots in the figure) exists, which shows that 4keV low-energy clusters hardly damage the surface of the target, but are not enough to remove impurities, the roughness can be reduced, but the method cannot be further;
the root mean square roughness Rq of the surface of the target sample 4 is 0.85nm, the SiC particles on the surface are fine, and the surface is smooth and almost free of pollution (white dots are fewer than those of the comparative sample 3), which shows that the flattening effect of the ladder-shaped energy mode is more obvious, fine and high particles are removed through high-energy cluster bombardment, and then the surface is optimized through low-energy clusters, so that the polishing time is greatly shortened (see table 1).
[ example 3 ]
Referring to fig. 5, by adjusting cluster energy, a single high-energy cluster of 12keV, a single low-energy cluster of 4keV and a ladder-shaped energy of 12-4keV are selected, and an energy step-by-step decreasing mode is selected to bombard the surface of N-type 4H-SiC (1000), and the surface morphology (the measurement range is 5 microns multiplied by 5 microns) before and after modification is compared (the ion dose of the cluster is 3 multiplied by 1016ions/cm 2). The method comprises the following steps:
(1) comparative sample 5: the surface appearance of the N-type 4H-SiC (1000) without cluster bombardment.
(2) Comparative sample 6: the polishing conditions were identical to those of comparative example 2.
(3) Comparative sample 7: the polishing conditions were identical to those of comparative example 3 of example 2.
(4) Target sample 8: the polishing conditions were completely the same as those of the object sample 4 in example 2.
(5) The control samples 5, 6, 7 and the target sample 8 were measured with an Atomic Force Microscope (AFM) over a measurement range of 5 μm, and the global morphology of the sample was observed over a larger range, and cross-sectional profile views, 9, 10, 11, 12 respectively, were cut out on 4 AFM images. Compare 4 AFM images with 4 cross-sectional profile images:
the root mean square roughness Rq of the surface of the comparative sample 5 is 1.14nm, the surface scratches are dense and large in quantity, and the scratch depth is 0-5 nm.
Secondly, the root mean square roughness Rq of the surface of the sample 6 is 0.79nm, scratches on the surface of the sample are almost completely removed, SiC particles become bigger and loose, which shows that the 12keV high-energy cluster can quickly remove the defects such as scratches and the like, the roughness is reduced, but the high-energy cluster impacts the target material severely, the temperature and the pressure of a collision area are increased sharply, and holes are left on the surface of the target material to cause plasma damage;
third, the root mean square roughness Rq of the surface of the comparison sample 7 is 0.76nm, the number of scratches on the surface of the sample is reduced, but shallow scratches with the depth of 0-3nm still exist, SiC particles are fine, but a lot of fine high-dirty dust (shown as white dots in the figure) exists, which shows that 4keV low-energy clusters can only remove part of the scratches to a certain extent, the roughness can also be reduced, but all damages cannot be removed under the same dosage;
and fourthly, the root mean square roughness Rq of the surface of the target sample 8 is 0.60nm, all scratches on the surface of the sample do not exist, the SiC particles are fine, the surface is smooth and almost pollution-free, the planarization effect of the ladder-shaped energy mode is more obvious, all scratches are removed through high-energy cluster bombardment, and the damage of holes and the like left by the high-energy clusters is optimized through low-energy clusters, so that the surface is flatter, and the polishing time is shortened (see Table 1).
[ example 4 ]
A cluster ion beam surface polishing method with cluster energy gradually decreased in a step shape is disclosed, referring to FIG. 6, a 7keV single high-energy cluster, a 5keV single medium-energy cluster and a 9-7-5-3-2keV step-shaped energy-energy gradually decreasing mode are selected by adjusting the cluster energy to bombard the surface of quartz glass, and the surface appearances (the measurement range is 5 Mum multiplied by 5 Mum) before and after modification are compared (the ion dose of the cluster is 1 multiplied by 1016ions/cm 2). The method comprises the following steps:
(1) comparative sample 13: the surface appearance of the quartz glass is not bombarded by clusters.
(2) Comparative sample 14: the surface modification effect of the 7keV single high-energy cluster on the quartz glass. Inputting high-purity Ar gas, adjusting the source gas pressure to 8atm, obtaining Ar gas clusters (with the average size of 800atoms/cluster) through a nozzle (with the diameter of 60 mu m), and ionizing neutral clusters into Ar cluster ions after heating a tungsten wire to discharge; the Ar cluster ions are accelerated in an electric field to obtain a high energy of 7 keV. After magnetic separation, light clusters and simple substance ions are deflected, heavy clusters vertically bombard the surface of quartz glass, and the cluster ion dose is 1 multiplied by 1016ions/cm 2.
(3) Comparative sample 15: 5keV single intermediate energy cluster has the surface modification effect on quartz glass. Inputting high-purity Ar gas, adjusting the source gas pressure to 8atm, obtaining Ar gas clusters (with the average size of 800atoms/cluster) through a nozzle (with the diameter of 60 mu m), and ionizing neutral clusters into Ar cluster ions after heating a tungsten wire to discharge; the Ar cluster ions are accelerated in an electric field to obtain a medium energy of 5 keV. After magnetic separation, light clusters and simple substance ions are deflected, heavy clusters vertically bombard the surface of quartz glass, and the cluster ion dose is 1 multiplied by 1016ions/cm 2.
(4) Target sample 16: 9-7-5-3-2keV ladder energy, namely the surface modification effect of the quartz glass in the mode of gradual energy decrease. Inputting high-purity Ar gas, adjusting the source gas pressure to 8atm, obtaining Ar gas clusters (with the average size of 800atoms/cluster) through a nozzle (with the diameter of 60 mu m), and ionizing neutral clusters into Ar cluster ions after heating a tungsten wire to discharge; the Ar cluster ions are accelerated in an electric field to obtain high energy of 9 keV. After magnetic separation, light clusters and simple substance ions are deflected, heavy clusters vertically bombard the surface of quartz glass, and the ion dose is 0.2 multiplied by 1016ions/cm 2. And then adjusting the acceleration voltage in turn to make cluster energy respectively 7keV, 5keV, 3keV and 2keV, and cluster ions with each energy bombard the surface of the quartz glass in turn, wherein the ion dose is 0.2 multiplied by 1016ions/cm 2.
(6) The control samples 13, 14, 15 and the target sample 16 were measured with an Atomic Force Microscope (AFM) in a measurement range of 5 μm by 5 μm to better observe the global topography of the sample surface. Compare 4 AFM images:
the root mean square roughness Rq of the surface of the sample 13 is 0.77nm, the scratches on the surface are dense and the number of the scratches is large, and the particles such as dust are obvious.
Secondly, the root mean square roughness Rq of the surface of the sample 14 is 1.29nm, scratches on the surface of the sample are almost completely removed, but the sample per se becomes thicker and looser, which shows that for the sample with the original roughness below 1nm, 7keV is enough to leave holes and other damages on the surface of the target material, although the defects such as scratches and the like can be quickly removed, the remaining damages increase the roughness on the contrary;
thirdly, the root mean square roughness Rq of the surface of the comparison sample 15 is 1.18nm, the scratch number of the surface of the sample is reduced, but the cluster with 5keV also leaves holes and other damages on the surface of the target material, and the damage is lighter than that of 7 keV;
the root mean square roughness Rq of the surface of the target sample 16 is 0.61nm, all scratches on the surface of the sample do not exist, the sample has fine particles and smooth surface, and almost no pollution exists, which shows that the flattening effect of the ladder-shaped energy mode is more obvious, all scratches are removed by high-energy cluster bombardment, and the damage such as holes left by high-energy clusters is optimized by low-energy clusters, so that the surface is flatter, and the polishing time is shortened (see Table 1).
Table 1: polishing parameters and planarization results for each sample, including cluster energy, ion dose, polishing time, root mean square surface roughness, Rq
Claims (5)
1. A cluster ion beam surface polishing method with cluster energy gradually reduced is characterized by comprising the following steps:
s1, bombarding the target material with high-energy cluster ion beams with the energy of 12 keV-20 keV, and removing the fine and high bulges and the deep scratches;
s2, bombarding the target material with medium-energy cluster ion beams with energy of 6 keV-12 keV, and removing surface damages such as wide and short bulges, shallow scratches, holes left by high-energy clusters and the like;
s3, bombarding the target material with low-energy cluster ion beams with energy of 0.5 keV-6 keV, and removing surface damages such as holes left by the target material bombarded by the cluster ion beams with intermediate energy.
2. The method of claim 1, wherein the cluster ion beam surface polishing method comprises: the method for generating the cluster ion beam comprises the steps of taking inert gas as a source gas, adjusting the gas pressure of the source gas to be 0.2-1.2 MPa, and obtaining a gas cluster by the ultrasonic expansion principle of a nozzle, wherein the diameter of the nozzle is 50-150 microns; the method is characterized in that a tungsten filament heating discharge principle is utilized to enable neutral clusters to be ionized into cluster ions, the cluster ion energy is between 0.5keV and 20keV, the high-energy cluster ion energy is between 12keV and 20keV, the medium-energy cluster ion energy is between 6keV and 12keV, and the low-energy cluster ion energy is between 0.5keV and 6 keV.
3. The method of claim 2, wherein the cluster ion beam surface polishing method comprises: the inert gas is Ne, Ar or Kr.
4. The method of claim 1, wherein the cluster ion beam surface polishing method comprises: in steps S1, S2, and S3, the cluster ion energy from the high-energy cluster ion beam to the low-energy cluster ion beam is stepwise decreased, and the gradient of the stepwise decrease has three modes, i.e., the same gradient, the decrease in gradient, or the increase in gradient.
5. The method of claim 4, wherein the cluster ion beam surface polishing method comprises: for the target with convex surface and less scratches, polishing treatment is carried out by adopting a mode of gradient reduction of cluster ion energy degressive; and for the target with a convex surface and more scratches, polishing treatment is carried out by adopting a gradient constant mode of descending cluster ion energy.
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