CN107359122A - Mn adulterates the preparation method of hetero-junctions spin fet - Google Patents
Mn adulterates the preparation method of hetero-junctions spin fet Download PDFInfo
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- CN107359122A CN107359122A CN201710421218.8A CN201710421218A CN107359122A CN 107359122 A CN107359122 A CN 107359122A CN 201710421218 A CN201710421218 A CN 201710421218A CN 107359122 A CN107359122 A CN 107359122A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 150000002500 ions Chemical group 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 16
- 239000010980 sapphire Substances 0.000 claims abstract description 16
- 238000002347 injection Methods 0.000 claims abstract description 12
- 239000007924 injection Substances 0.000 claims abstract description 12
- 238000000926 separation method Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000001771 vacuum deposition Methods 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 241001062009 Indigofera Species 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000010437 gem Substances 0.000 claims description 3
- 229910001751 gemstone Inorganic materials 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000002500 effect on skin Effects 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
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- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
Abstract
The present invention relates to a kind of preparation method of Mn doping hetero-junctions spin fets, this method includes：Choose Sapphire Substrate；Ga is grown in sapphire substrate surface2O3Epitaxial layer；In Ga2O3Epitaxial layer injection Mn ions form source region and drain region；To Ga2O3Epitaxial layer carries out gluing, development, and Ohmic contact with source and drain electrode are made in source region and drain region surface；Using plasma enhanced CVD method in Ga2O3Epi-layer surface grows separation layer；In Ga2O3Epi-layer surface makes Schottky contacts gate electrode；The transistor prepared by the present invention, doping concentration and defect density in source and drain material can be changed by the dosage and annealing time for adjusting ion implanting, so as to optimize the spin polarizability of material at room temperature.
Description
Technical field
The invention belongs to semiconductor applications, more particularly to a kind of preparation side of Mn doping hetero-junctions spin fet
Method.
Background technology
It is well known that electronics has two important intrinsic attributes, i.e. electric charge and spin.Modern microelectronic technology only utilizes
Spin properties of the electric charge attribute of electronics without considering electronics.The spin substitution electron charge of electronics is made in spintronics
For information storage and the carrier of transmission.The spin state of electronics has a longer relaxation time, more difficult by impurity or defect
Scattering is destroyed, and spin state is also controlled easily by the magnetic field outside regulation.
In recent years, the spin field effect pipe proposed based on two-dimensional electron gas, its theoretical and experimental study relate to electronics certainly
Rotation transports and many-sided complicated factor influenceed such as material property, causes the concern and exploration of numerous researchers.Its basic structure
Want for by the electrical type of electrooptic modulator spin field transistor more so-called than proposition.By the electron spin of source electrode input along x side
To it can be expressed as the combination of positive and negative automatic rotary component in the z-direction, pass through the Rashba items in electron effective mass Hamilton
The caused electron energy division for spinning up and spinning downward, produces phase of the electronics by FET in transport process
Difference, in the electronic phase angle generation change that can be regarded as along the spin of positive negative z direction spinned in the x-direction that drain electrode receives, so that
Carry out current regulation.And the Rashba coefficients Rs ashba coefficients η in Rashba items is directly proportional to the electric field of heterojunction boundary, therefore
Can be by adding grid voltage come control electric current size.
But spinning electron is injected into semiconductor by general spin fet by ferromagnetic material, but due to iron
Magnetic material such as Fe and semi-conducting material such as Sn band structure, which mismatches, causes the efficiency of spin injection there was only a few percent.
Therefore, how injection efficiency is improved, what is become in the research and application of spin fet device is particularly heavy
Will.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the invention provides a kind of Mn doping hetero-junctions spin traps effects
Answer the preparation method of transistor.
An embodiment provides a kind of preparation method of Mn doping hetero-junctions spin fets, bag
Include：
(a) Sapphire Substrate is chosen；
(b) grown using molecular beam epitaxy (Molecular Beam Epitaxy, MBE) technique in sapphire substrate surface
Ga2O3Epitaxial layer；
(c) in Ga2O3Epitaxial layer injection Mn ions form source region and drain region；
(d) to Ga2O3Epitaxial layer carries out gluing, development, and Ohmic contact with source and drain electrode are made in source region and drain region surface；
(e) plasma enhanced CVD method (Plasma Enhanced Chemical Vapor are utilized
Deposition, PECVD) in Ga2O3Epi-layer surface grows separation layer；
(f) in Ga2O3Epi-layer surface makes Schottky contacts gate electrode.
Further, in step (b), Ga is grown in sapphire substrate surface using technique for vacuum coating2O3Epitaxial layer, bag
Include：
Temperature, RF source power 300W at 940 DEG C, pressure 1.5 × 10-5Under Torr, using technique for vacuum coating in indigo plant
Jewel substrate surface growth thickness is 0.5 μm, n-type doping concentration is 1 × 1014-1×1016cm-3Ga2O3；Evaporation source material is
High purity elemental metal Ga, mass fraction 99.99999%.
In one embodiment of the invention, step (c) includes：
(c1) in Ga2O3Epi-layer surface deposition thickness be 1 μm of Al as source region and the barrier layer in drain region, pass through photoetching
The injection region in source region and drain region is formed with etching；
(c2) at a temperature of 500 DEG C, to Ga2O3Epitaxial layer four Mn ion implantings of progress, Implantation Energy 140keV,
Formation depth is 0.5 μm, doping concentration is 1 × 1014-5×1015cm-2Source region and drain region；
In one embodiment of the invention, step (d) includes：
(d1) photoetching process is used, makes ohmic contact regions by lithography in source region and drain region, deposition thickness is 300nm metal
Ti, source region and drain region metal level are formed by peeling off；
(d2) in 470 DEG C of argon gas atmosphere, carry out thermal annealing and form Ohmic contact with source and drain electrode in 1 minute.
In one embodiment of the invention, include before step (f)：Using photoetching and plasma in separation layer table
Face etches the grid region that width is 1 μm.
Further, the material in drain region is that n-type doping concentration is 1 × 1014-1×1016cm-3, thickness, which is 0.5 μm, to be had
The Ga of defects2O3Material.
Further, separation layer is the thick SiO of 200nm2。
Further, Schottky contacts gate electrode metal is Au, thickness 300nm.
Compared with prior art, the invention has the advantages that：
1) transistor prepared by the present invention, source and drain material can be changed by the dosage and annealing time for adjusting ion implanting
Doping concentration and defect density in material, so as to optimize the spin polarizability of material at room temperature；
2) Mn adulterates the preparation method of hetero-junctions spin fet in the present invention, because raceway groove and source and drain use together
A kind of material, epitaxial growth can be carried out directly on substrate, while source and drain is by the way of selection region ion implanting Mn ions
Formed, there is the advantages of compatible with common process, preparation is simple, and skin effect is small, while spin injection can be improved and imitated with reception
Rate；
3) ion implanting, the generation of secondary phase and interfacial state can be avoided, crystalline quality is more preferable, and its electrical properties is influenceed
It is small.
Brief description of the drawings
Below in conjunction with accompanying drawing, the embodiment of the present invention is described in detail.
Fig. 1 adulterates hetero-junctions spin fet preparation method flow for a kind of Mn provided in an embodiment of the present invention
Figure；
Fig. 2 a- Fig. 2 g adulterate hetero-junctions spin fet preparation technology for a kind of Mn provided in an embodiment of the present invention
Schematic diagram；
Fig. 3 is that a kind of Mn of the embodiment of the present invention adulterates hetero-junctions spin fet structural representation.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1 is referred to, Fig. 1 adulterates hetero-junctions spin fet for a kind of Mn provided in an embodiment of the present invention and prepared
Method flow diagram, preparation method are as follows：
(a) Sapphire Substrate is chosen；
(b) Ga is grown in sapphire substrate surface2O3Epitaxial layer；
(c) in Ga2O3Epitaxial layer injection Mn ions form source region and drain region；
(d) to Ga2O3Epitaxial layer carries out gluing, development, and Ohmic contact with source and drain electrode are made in source region and drain region surface；
(e) using plasma enhanced CVD method in Ga2O3Epi-layer surface grows separation layer；
(f) in Ga2O3Epi-layer surface makes Schottky contacts gate electrode.
Preferably, in step (b), Ga is grown in sapphire substrate surface using technique for vacuum coating2O3Epitaxial layer, including：
Temperature, RF source power 300W at 940 DEG C, pressure 1.5 × 10-5Under Torr, using technique for vacuum coating in indigo plant
Jewel substrate surface growth thickness be 0.5 μm be lightly doped, n-type doping concentration is 1 × 1014-1×1016cm-3Ga2O3；Evaporation source
Material is high purity elemental metal Ga, mass fraction 99.99999%.
Preferably, step (c) can include：
(c1) in Ga2O3Epi-layer surface deposition thickness be 1 μm of Al as source region and the barrier layer in drain region, pass through photoetching
The injection region in source region and drain region is formed with etching；
(c2) at a temperature of 500 DEG C, to Ga2O3Epitaxial layer four Mn ion implantings of progress, Implantation Energy 140keV,
Formation depth is 0.5 μm, doping concentration is 1 × 1014-5×1015cm-2Source region and drain region；
Further, step (d) can include：
(d1) photoetching process is used, makes ohmic contact regions by lithography in source region and drain region, deposition thickness is 300nm metal
Ti, source region and drain region metal level are formed by peeling off；
(d2) in 470 DEG C of argon gas atmosphere, carry out thermal annealing and form Ohmic contact with source and drain electrode in 1 minute.
Preferably, include before step (f)：It is 1 μ to etch width in insulation surface using photoetching and plasma
M grid region.
The preparation method of Mn of the present invention doping hetero-junctions spin fet, because raceway groove and source and drain are using same
Material, epitaxial growth can be carried out directly on substrate, while source and drain is formed by the way of selection region ion implanting Mn ions,
With the advantages of compatible with common process, preparation is simple, and skin effect is small, while spin injection and receiving efficiency can be improved
Embodiment two
It refer to Fig. 2 a- Fig. 2 g, Fig. 2 a- Fig. 2 g and adulterate hetero-junctions spin traps effect for a kind of Mn provided in an embodiment of the present invention
Transistor fabrication processes schematic diagram is answered, the preparation method comprises the following steps：
Step 1, as shown in Figure 2 a, Sapphire Substrate 001 is chosen, successively using acetone, absolute ethyl alcohol and deionized water pair
Sapphire Substrate is cleaned by ultrasonic.
Step 2, as shown in Figure 2 b, it is 0.5 μm in sapphire substrate surface growth thickness using technique for vacuum coating gently to mix
Miscellaneous Ga2O3Epitaxial layer 002, n-type doping concentration are 1 × 1014-1×1016cm-3；Evaporation source material is high purity elemental metal Ga,
Mass fraction is 99.99999%, and growth temperature is 940 DEG C, RF source power 300W, and pressure is 1.5 × 10-5Torr；
Step 3, as shown in Figure 2 c, in Ga2O3Four Mn ion selectivities of epitaxial layer are injected to form source region 003 and drain region
004：Specifically, including：
Step 3.1, in Ga2O3The Al that deposit a layer thickness is 1 μm on epitaxial layer leads to as source region and the barrier layer in drain region
Cross photoetching and etching forms the injection region in source region and drain region；
Step 3.2, to Ga at a temperature of 500 DEG C2O3Epitaxial layer carries out four Mn ion implantings, using 140keV note
Enter energy, be injected into Ga2O3Epitaxial layer, depth is formed as 0.5 μm, doping concentration is 1 × 1014-5×1015cm-2Source region 003
With drain region 004；
Step 3.3, first acetone, methanol and isopropyl acetone wash 30min and remove carbon-based organic contamination.
Step 3.4, using 98%H2SO4:30%H2O2(3:1) mixed liquor cleans standard to Ga2O3Epi-layer surface is entered
Row cleaning, the protection of C films is made after drying；Then ion-activated annealing 10min is carried out in 850 DEG C of argon atmospheres.
Step 4, as shown in Figure 2 d, specifically include：
Step 4.1, to whole Ga2O3Epitaxial layer carries out gluing, development, forms ohmic contact regions in source region and drain region, forms sediment
Product 300nm Ti metals, form it into source region and drain region metal level by peeling off afterwards；
Step 4.2, in 470 DEG C of argon gas atmosphere, thermal annealing is carried out to whole transistor and forms Ohmic contact source within 1 minute
Pole 005 and drain electrode 006；
Step 5, as shown in Figure 2 e, using pecvd process in Ga2O3Epi-layer surface deposition thickness is 200nm SiO2Every
Absciss layer 007；As shown in figure 2f, the grid region 008 that width is 1 μm is gone out using photoetching and plasma etching；
Step 6, as shown in Figure 2 g, using the method for magnetron sputtering in Ga2O3Epi-layer surface splash-proofing sputtering metal 300nm metals
Au is as Schottky contacts gate electrode 009, and then short annealing is handled in argon gas atmosphere.
Embodiment three
Fig. 3 is refer to, Fig. 3 adulterates hetero-junctions spin fet structure for a kind of Mn provided in an embodiment of the present invention
Schematic diagram.The spin fet is made of the above-mentioned preparation method as shown in Fig. 2 a- Fig. 2 g.
Specifically, spin fet includes：Sapphire Substrate 301, Ga2O3Epitaxial layer 302, Ga2O3Source region 303,
Ga2O3Drain region 304, source electrode 305, drain electrode 306, separation layer 307, Schottky contacts gate electrode 308.
Wherein, Ga2O3Drain region 304, Ga2O3Source region 303, Ga2O3Epitaxial layer 302 is located in Sapphire Substrate 301；Source electrode
305 are located at Ga2O3Source region 303, Schottky contacts gate electrode 308 are located at Ga2O3On epitaxial layer 302, drain electrode 306 is located at Ga2O3Leakage
In area 304；Ga2O3Epitaxial layer 302 is located at source electrode 305 and Schottky contacts gate electrode 308, and Schottky contacts gate electrode 308
Between drain electrode 306.
Preferably, Ga2O3Source region 303 and Ga2O3Drain region 304 is by Ga2O3Epitaxial layer 302 by four Selective implantation Mn from
Son is formed.
Preferably, Ga2O3Epitaxial layer 302 is that n-type doping concentration is 1 × 1014-1×1016cm-3, thickness is 0.5 μm of tool
There is the Ga of defects2O3Material.
Preferably, separation layer 307 is the thick SiO of 200nm2。
Preferably, Schottky contacts gate electrode metal is Au, thickness 300nm.
To sum up, specific case used herein Mn a kind of to the present invention adulterates the system of hetero-junctions spin fet
The principle and embodiment of Preparation Method are set forth, and the explanation of above example is only intended to help the method for understanding the present invention
Core concept；Meanwhile for those of ordinary skill in the art, according to the thought of the present invention, in embodiment and answer
With there will be changes in scope, to sum up, this specification content should not be construed as limiting the invention, protection of the invention
Scope should be defined by appended claim.
Claims (9)
- A kind of 1. preparation method of Mn doping hetero-junctions spin fet, it is characterised in that including：(a) Sapphire Substrate is chosen；(b) Ga is grown in the sapphire substrate surface2O3Epitaxial layer；(c) in the Ga2O3Epitaxial layer injection Mn ions form source region and drain region；(d) to the Ga2O3Epitaxial layer carries out gluing, development, and Ohmic contact with source is made in the source region and the drain region surface And drain electrode；(e) using plasma enhanced CVD method in the Ga2O3Epi-layer surface grows separation layer；(f) in the Ga2O3Epi-layer surface makes Schottky contacts gate electrode.
- 2. preparation method according to claim 1, it is characterised in that in the step (b), existed using technique for vacuum coating The sapphire substrate surface grows Ga2O3Epitaxial layer, including：Temperature, RF source power 300W at 940 DEG C, pressure 1.5 × 10-5Under Torr, using technique for vacuum coating in the indigo plant Jewel substrate surface growth thickness is 0.5 μm, n-type doping concentration is 1 × 1014-1×1016cm-3Ga2O3；Evaporation source material is High purity elemental metal Ga, mass fraction 99.99999%.
- 3. preparation method according to claim 1, it is characterised in that the step (c) includes：(c1) in the Ga2O3Epi-layer surface deposition thickness be 1 μm of Al as the source region and the barrier layer in the drain region, The injection region in the source region and the drain region is formed by photoetching and etching；(c2) at a temperature of 500 DEG C, to the Ga2O3Epitaxial layer four Mn ion implantings of progress, Implantation Energy 140keV, Formation depth is 0.5 μm, doping concentration is 1 × 1014-5×1015cm-2The source region and the drain region.
- 4. preparation method according to claim 1, it is characterised in that the step (d) includes：(d1) photoetching process is used, makes ohmic contact regions by lithography in the source region and the drain region, deposition thickness is 300nm's Metal Ti, the source region and the drain region metal level are formed by peeling off；(d2) in 470 DEG C of argon gas atmosphere, carry out thermal annealing and form the Ohmic contact with source and drain electrode in 1 minute.
- 5. preparation method according to claim 1, it is characterised in that include before step (f)：Using photoetching and wait from Daughter etches the grid region that width is 1 μm in the insulation surface.
- 6. preparation method according to claim 1, it is characterised in that the material in the drain region be n-type doping concentration be 1 × 1014-1×1016cm-3, thickness is 0.5 μm of the Ga with defects2O3Material.
- 7. preparation method according to claim 1, it is characterised in that the separation layer is the thick SiO of 200nm2。
- 8. preparation method according to claim 1, it is characterised in that the Schottky contacts gate electrode metal is Au, thick Spend for 300nm.
- 9. a kind of Mn adulterates hetero-junctions spin fet, it is characterised in that the spin fet is by right It is required that the method described in 1~8 any one prepares to be formed.
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| CN106796889A (en) * | 2014-08-29 | 2017-05-31 | 株式会社田村制作所 | Semiconductor element and its manufacture method |
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