CN107346969A - 总线驱动器/线路驱动器 - Google Patents
总线驱动器/线路驱动器 Download PDFInfo
- Publication number
- CN107346969A CN107346969A CN201710309935.1A CN201710309935A CN107346969A CN 107346969 A CN107346969 A CN 107346969A CN 201710309935 A CN201710309935 A CN 201710309935A CN 107346969 A CN107346969 A CN 107346969A
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- China
- Prior art keywords
- transistor
- dmos transistors
- voltage
- source electrode
- driver
- Prior art date
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- 238000010586 diagram Methods 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/149,079 US9871029B2 (en) | 2016-05-06 | 2016-05-06 | Bus driver / line driver |
US15/149,079 | 2016-05-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107346969A true CN107346969A (zh) | 2017-11-14 |
CN107346969B CN107346969B (zh) | 2021-08-24 |
Family
ID=60244003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710309935.1A Active CN107346969B (zh) | 2016-05-06 | 2017-05-05 | 总线驱动器/线路驱动器 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9871029B2 (zh) |
CN (1) | CN107346969B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110011653A (zh) * | 2017-12-06 | 2019-07-12 | 台湾积体电路制造股份有限公司 | 觉知温度不稳定性的电路及其操作方法 |
CN113206654A (zh) * | 2021-03-31 | 2021-08-03 | 上海川土微电子有限公司 | 一种差分总线驱动器 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017219551A1 (de) * | 2017-11-03 | 2019-05-09 | Continental Teves Ag & Co. Ohg | Verpolschutzanordnung, Verfahren zum Betrieb der Verpolschutzanordnung und korrespondierende Verwendung |
WO2021090688A1 (ja) * | 2019-11-06 | 2021-05-14 | 株式会社ソシオネクスト | 半導体集積回路装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5132568A (en) * | 1990-04-26 | 1992-07-21 | Electronics And Telecommunications Research Institute | Tri-state output circuit utilizing a BiCMOS inverter circuit |
JPH06140912A (ja) * | 1992-10-28 | 1994-05-20 | Nec Corp | 3ステート・バッファ回路 |
EP0657995A1 (en) * | 1993-12-07 | 1995-06-14 | STMicroelectronics S.r.l. | Mixed typology output stage |
US6331794B1 (en) * | 1999-03-10 | 2001-12-18 | Richard A. Blanchard | Phase leg with depletion-mode device |
CN101420223A (zh) * | 2007-10-23 | 2009-04-29 | 三星电子株式会社 | 差分发送器 |
CN101562445A (zh) * | 2004-05-31 | 2009-10-21 | 松下电器产业株式会社 | 开关电路及半导体装置 |
CN102457164A (zh) * | 2010-10-14 | 2012-05-16 | Nxp股份有限公司 | 高压输出驱动器 |
CN102957306A (zh) * | 2011-08-19 | 2013-03-06 | 株式会社安川电机 | 栅极驱动电路和功率变换装置 |
CN203193592U (zh) * | 2010-10-18 | 2013-09-11 | 松下电器产业株式会社 | 高频用开关电路 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5414314A (en) | 1994-06-09 | 1995-05-09 | Maxim Integrated Products | High swing interface stage |
WO2002056473A2 (en) * | 2001-01-09 | 2002-07-18 | Broadcom Corp | Sub-micron high input voltage tolerant input output (i/o) circuit |
US6686772B2 (en) * | 2001-11-19 | 2004-02-03 | Broadcom Corporation | Voltage mode differential driver and method |
US7570089B2 (en) | 2005-10-28 | 2009-08-04 | Analog Devices, Inc. | Output stage interface circuit for outputting digital data onto a data bus, and a method for operating an output stage interface circuit |
US8816389B2 (en) | 2011-10-21 | 2014-08-26 | Analog Devices, Inc. | Overvoltage and/or electrostatic discharge protection device |
-
2016
- 2016-05-06 US US15/149,079 patent/US9871029B2/en active Active
-
2017
- 2017-05-05 CN CN201710309935.1A patent/CN107346969B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5132568A (en) * | 1990-04-26 | 1992-07-21 | Electronics And Telecommunications Research Institute | Tri-state output circuit utilizing a BiCMOS inverter circuit |
JPH06140912A (ja) * | 1992-10-28 | 1994-05-20 | Nec Corp | 3ステート・バッファ回路 |
EP0657995A1 (en) * | 1993-12-07 | 1995-06-14 | STMicroelectronics S.r.l. | Mixed typology output stage |
US6331794B1 (en) * | 1999-03-10 | 2001-12-18 | Richard A. Blanchard | Phase leg with depletion-mode device |
CN101562445A (zh) * | 2004-05-31 | 2009-10-21 | 松下电器产业株式会社 | 开关电路及半导体装置 |
CN101420223A (zh) * | 2007-10-23 | 2009-04-29 | 三星电子株式会社 | 差分发送器 |
CN102457164A (zh) * | 2010-10-14 | 2012-05-16 | Nxp股份有限公司 | 高压输出驱动器 |
CN203193592U (zh) * | 2010-10-18 | 2013-09-11 | 松下电器产业株式会社 | 高频用开关电路 |
CN102957306A (zh) * | 2011-08-19 | 2013-03-06 | 株式会社安川电机 | 栅极驱动电路和功率变换装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110011653A (zh) * | 2017-12-06 | 2019-07-12 | 台湾积体电路制造股份有限公司 | 觉知温度不稳定性的电路及其操作方法 |
CN110011653B (zh) * | 2017-12-06 | 2023-05-02 | 台湾积体电路制造股份有限公司 | 觉知温度不稳定性的电路及其操作方法 |
CN113206654A (zh) * | 2021-03-31 | 2021-08-03 | 上海川土微电子有限公司 | 一种差分总线驱动器 |
CN113206654B (zh) * | 2021-03-31 | 2024-05-14 | 上海川土微电子有限公司 | 一种差分总线驱动器 |
Also Published As
Publication number | Publication date |
---|---|
US20170323879A1 (en) | 2017-11-09 |
CN107346969B (zh) | 2021-08-24 |
US9871029B2 (en) | 2018-01-16 |
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Legal Events
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Bermuda (UK), Hamilton Patentee after: Analog Devices Global Unlimited Co. Address before: Bermuda (UK), Hamilton Patentee before: ANALOG DEVICES GLOBAL |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220113 Address after: Limerick Patentee after: ANALOG DEVICES INTERNATIONAL UNLIMITED Co. Address before: Bermuda (UK), Hamilton Patentee before: Analog Devices Global Unlimited Co. |