CN107346800A - The manufacture method of LED encapsulation structure and the LED encapsulation structure - Google Patents
The manufacture method of LED encapsulation structure and the LED encapsulation structure Download PDFInfo
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- CN107346800A CN107346800A CN201710312765.2A CN201710312765A CN107346800A CN 107346800 A CN107346800 A CN 107346800A CN 201710312765 A CN201710312765 A CN 201710312765A CN 107346800 A CN107346800 A CN 107346800A
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- conductive frame
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- encapsulation structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention is the manufacture method and the LED encapsulation structure on a kind of LED encapsulation structure, and the manufacture method comprises the steps of：A) conductive frame is provided, it has multiple metal areas and multiple communication regions, and at least one of multiple metal areas are connected with multiple communication regions；B) in filling a resin portion on conductive frame to form a moulding bodies；C) by multiple communication regions on pre-cut step cut-out moulding bodies；And moulding bodies d) are cut into multiple LED encapsulation structures by a separating step.Wherein, multiple communication regions are disposed on a bottom surface of moulding bodies, and pre-cut step is applied to the bottom surface of moulding bodies.
Description
Technical field
The present invention is the manufacture method and the encapsulating structure on a kind of encapsulating structure, is encapsulated especially with regard to a kind of LED
The manufacture method of structure and the LED encapsulation structure.
Background technology
In the manufacture method of known LED encapsulation structure, formed by transfer modling (Transfer molding)
Packaging body, will be directly in a manner of cutting simultaneously generally after the mould mold resin portion with depression is passed through on metal framework
Cut the metal framework and the resin portion.
Therefore, the spy that will there is " exposing electrode portion in the bottom of packaging body " by the packaging body that aforesaid way is formed
Sign, and the metal portion for having part will be connected with electrode portion and also be revealed on the side surface of packaging body and be flushed with resin portion.
Consequently, it is possible to after following process forms light-emitting device, when being welded in reflow process, side table is exposed to
The metal portion in face will not be coated by solder.The metal portion exposed will because of the influence of external environment, such as metal oxidation,
The dust of working environment, which is stained with, to be covered, and then influences the electric characteristics of LED encapsulation structure, causes LED encapsulation structure to fail.
In addition, because the size of LED encapsulation structure is towards downsizing, it is thus possible to can cause to be exposed to the difference gold of side surface
The spacing in category portion is smaller, therefore when LED encapsulation structure and external printed circuit board are attached, may because climbing the result of tin and
Cause short circuit.Meanwhile because the power of LED chip constantly increases, therefore in known technology, electrode and crystal bonding area can be arranged at together
One position, therefore the heat energy that chip is distributed may result in the effect reduction of conduction, or cause thermal stress and make chip
Depart from the routing area of electrode.
In view of this, manufacture method and the LED encapsulation structure of a kind of LED encapsulation structure how to be provided to overcome above-mentioned ask
Topic, is for industry active demand person.
The content of the invention
The purpose of the present invention is the manufacture method and the LED encapsulation structure for providing a kind of LED encapsulation structure, and it is had
The multiple communication regions having, the communication region can be exposed to the bottom surface of LED encapsulation structure, therefore subsequently be welded to form light-emitting device
Afterwards, multiple communication regions will be covered without exposed to the side surface of LED encapsulation structure for protection resin, so even the LED
Encapsulating structure is stained with by the dust of working environment to be covered, and still can still maintain the electric characteristics of LED encapsulation structure.
To reach above-mentioned purpose, manufacture method of the invention comprises the steps of：A) conductive frame is provided, it has more
Individual metal area and multiple communication regions, and at least one of multiple metal areas are connected with multiple communication regions；B) in conductive frame
It is upper to fill a resin portion to form a moulding bodies；C) by multiple communication regions on pre-cut step cut-out moulding bodies；And d)
Moulding bodies are cut into multiple LED encapsulation structures by a separating step.Wherein, multiple communication regions are disposed on the one of moulding bodies
Bottom surface, and pre-cut step is applied to the bottom surface of moulding bodies.
To reach above-mentioned purpose, manufacture method of the invention is formed multiple pre- after pre-cut step in the bottom surface of moulding bodies
Dissected valley groove.
To reach above-mentioned purpose, multiple pre-cut grooves respectively have a gash depth possessed by manufacture method of the invention,
Multiple communication regions respectively have a communication region thickness, and multiple metal areas respectively have a metal area thickness, gash depth is more than contact
Area's thickness and it is less than or equal to metal area thickness.
To reach above-mentioned purpose, manufacture method of the invention further includes a protection resin filling step, selectively by one
Protection resin is filled in multiple pre-cut grooves.
To reach above-mentioned purpose, pre-cut step possessed by manufacture method of the invention is cut along a single direction
Cut, and pre-cut step does not cut off resin portion.
To reach above-mentioned purpose, manufacture method of the invention further includes a die bond step, a bonding wire step and filler step
Suddenly, and after die bond step, bonding wire step and filler step be applied to before pre-cut step or put on pre-cut step.
To reach above-mentioned purpose, multiple metal areas possessed by manufacture method of the invention include multiple groups conductive panes
Frame, and multiple groups conductive frames respectively include two high taiwan areas.
To reach above-mentioned purpose, multiple metal areas possessed by manufacture method of the invention include multiple groups conductive panes
Frame, and multiple groups conductive frames respectively include a crystal bonding area and two electrodes.
To reach above-mentioned purpose, multiple communication regions possessed by manufacture method of the invention are to be exposed to bottom surface.
To reach above-mentioned purpose, LED encapsulation structure of the invention include a conductive frame, a resin portion, a LED chip and
One packaging plastic.Conductive frame has an at least metal area and an at least communication region；Resin portion be disposed on conductive frame periphery with
Form a reflection cup portion；LED chip is arranged at least on a metal area of reflector；Packaging plastic is filled in reflection cup portion.Wherein,
When resin portion is arranged at the periphery of conductive frame, conductive frame is revealed in the bottom surface of resin portion, and an at least communication region is exposed to
At least one side of LED encapsulation structure, and an at least metal area does not electrically conduct each other with an at least communication region.
For the above-mentioned purpose, an at least metal area is two metal areas possessed by LED encapsulation structure of the invention, two gold medal
It is two electrode portions to belong to area, and LED chip is disposed on one of two electrode portions.
For the above-mentioned purpose, an at least metal area is three metal areas possessed by LED encapsulation structure of the invention, three gold medal
It is respectively a crystal bonding area, a positive electrode and a negative electrode to belong to area, and LED chip is disposed on crystal bonding area.
Brief description of the drawings
For the above objects, features and advantages of the present invention can be become apparent, the tool below in conjunction with accompanying drawing to the present invention
Body embodiment elaborates, wherein：
Figure 1A is top view (the first state of conductive frame possessed by the first embodiment of LED encapsulation structure of the present invention
Sample)；
Figure 1B is the profile of Figure 1A line A-A section；
Fig. 2A is that conductive frame possessed by the first embodiment of LED encapsulation structure of the present invention is upper behind potting resin portion
View (the first aspect)；
Fig. 2 B are the profile of Fig. 2A line B-B section；
Fig. 2 C are conductive frame facing upward behind potting resin portion possessed by the first embodiment of LED encapsulation structure of the present invention
View；
Fig. 3 A are that conductive frame carries out pre-cut groove in the back side possessed by the first embodiment of LED encapsulation structure of the present invention
Top view (the first aspect) afterwards；
Fig. 3 B are the profile of Fig. 3 A line C-C section；
Fig. 3 C are that conductive frame carries out pre-cut groove in the back side possessed by the first embodiment of LED encapsulation structure of the present invention
Upward view afterwards；
Fig. 4 A are upper after conductive frame progress separating step possessed by the first embodiment of LED encapsulation structure of the present invention
View (the first aspect)；
Fig. 4 B are the profile of Fig. 4 A line D-D section；
Fig. 4 C are facing upward after conductive frame progress separating step possessed by the first embodiment of LED encapsulation structure of the present invention
View；
Fig. 5 A are that conductive frame carries out pre-cut groove in the back side possessed by the first embodiment of LED encapsulation structure of the present invention
The top view (the second aspect) of filling protection resin afterwards；
Fig. 5 B are the profile of Fig. 5 A E-E line segments；
Fig. 5 C are that conductive frame carries out pre-cut groove in the back side possessed by the first embodiment of LED encapsulation structure of the present invention
The upward view of filling protection resin afterwards；
Fig. 6 A are that conductive frame possessed by Fig. 5 A LED encapsulation structure is carried out to the top view (second after separating step
Aspect)；
Fig. 6 B are the profile of Fig. 6 A F-F line segments；
Fig. 6 C are that conductive frame possessed by Fig. 5 A LED encapsulation structure is carried out to the upward view after separating step；
Fig. 7 is the schematic diagram of the first aspect of LED encapsulation structure first embodiment of the present invention；
Fig. 8 is the schematic diagram of the second aspect of LED encapsulation structure first embodiment of the present invention；
Fig. 9 is the manufacture method block diagram of LED encapsulation structure of the present invention；
Figure 10 is the top view of conductive frame possessed by LED encapsulation structure second embodiment of the present invention；
Figure 11 A are conductive frame possessed by the second embodiment of LED encapsulation structure of the present invention behind potting resin portion
Top view；
Figure 11 B are the profile of Figure 11 A G-G line segments；
Figure 12 A are that conductive frame carries out pre- dissected valley in the back side possessed by the second embodiment of LED encapsulation structure of the present invention
The upward view of groove；
Figure 12 B are the profile of Figure 12 A H-H line segments；
Figure 13 is that conductive frame carries out pre-cut groove in the back side possessed by the second embodiment of LED encapsulation structure of the present invention
The profile of filling protection resin afterwards；
Figure 14 A are the upward view that conductive frame possessed by Figure 12 A LED encapsulation structure is carried out to separating step；
Figure 14 B are the profile of Figure 14 A I-I line segments；
Figure 15 A are the top view of LED encapsulation structure second embodiment of the present invention；
Figure 15 B are the upward view of LED encapsulation structure second embodiment of the present invention；
Figure 15 C are the profile of Figure 15 A J-J line segments；And
Figure 16 A-16D are another design aspect of conductive frame possessed by LED encapsulation structure second embodiment of the present invention
Schematic diagram.
Component label instructions are as follows in figure：
100 LED encapsulation structures
100 ' LED encapsulation structures
110 sides
200 conductive frames
210 metal areas
210 ' secondary conductive frames
210 " secondary conductive frames
212 high taiwan areas, electrode portion
214 crystal bonding areas
216 positive electrodes
218 negative electrodes
220 communication regions
300 resin portions
300a calkings area resin portion
300b sidewall regions resin portion
310 reflection cup portion
400 LED chips
500 packaging plastics
600 moulding bodies
600a bottom surfaces
610 pre-cut grooves
620 Cutting Roads
700 protection resins
TM metal area thickness
TC communication regions thickness
DG gash depths
Embodiment
The present invention is the manufacture method and the LED encapsulation structure on a kind of LED encapsulation structure.
Wherein, Figure 1A to Fig. 4 C is to disclose the first aspect pair possessed by the first embodiment of LED encapsulation structure of the present invention
Should be to the schematic diagram of each manufacturing step, and the first embodiment that Fig. 5 A to Fig. 6 C then disclose LED encapsulation structure of the present invention is had
The corresponding schematic diagram to each manufacturing step of the second aspect.
As shown in Fig. 9 manufacture method block diagram, a kind of preparation method of disclosed LED encapsulation structure 100,
Comprise the steps of.First, as shown in step 901：A conductive frame 200 is provided, it has multiple metal areas 210 and multiple
It is area 220, and at least one of multiple metal areas 210 are connected with multiple communication regions 200；As shown in step 902：In conduction
A resin portion 300 is filled on framework 200 to form a moulding bodies 600；As shown in step 903：By a pre-cut step knife edge die
Multiple communication regions 200 on plastomer 600；Finally, as shown in step 904：Moulding bodies 600 are cut into by a separating step more
Individual LED encapsulation structure 100.Wherein, it is of the invention to be technically characterized in that：Above-mentioned multiple communication regions 200 are disposed on moulding bodies
A 600 bottom surface 600a, and pre-cut step is applied to the bottom surface 600a of moulding bodies 600.
Specifically, in the conductive frame 200 mentioned by step 901, multiple metal areas 210 and multiple communication regions 220 etc.
Appearance is found in Figure 1A -1B, and as illustrated, at least one of multiple metal areas 210 are connected with multiple communication regions 220.
The production method of above-mentioned conductive frame 200 can be to use Punching, Stamping or Etching mode institute
It is made, conductive frame 200 can be electroplated again afterwards.Via the conductive frame 200 formed after above-mentioned processing procedure, can be formed multiple
Space (also referred to as exhaustion region), these spaces can be around multiple metal areas 210 and multiple communication regions 220.
Then, also referring to step 902 and Fig. 2A -2C, when in potting resin portion 300 on conductive frame 200 to be formed
After moulding bodies 600, part resin portion 300 can be filled in the space between two metal areas 210, so as to form calking area resin portion
300a, the resin portion 300 of another part can be then formed on multiple communication regions 220 and part covers multiple metal areas 210, from
And form sidewall region resin portion 300b.
Please continue refering to step 903 and Fig. 3 A-3C, when by pre-cut step cut-out moulding bodies 600 on multiple communication regions
When 200, because multiple communication regions 200 are formed at the bottom surface of moulding bodies 600, therefore after pre-cut step is carried out, moulding bodies 600
Bottom surface 600a will form multiple pre-cut grooves 610, to ensure electricity is all not present between multiple metal areas 210 in moulding bodies 600
Property connection.Now, pre-cut step is cut along a single direction, and multiple pre-cut grooves 610 that pre-cut step is formed
Sidewall region resin portion 300b can't be cut off.
Finally, also referring to step 904 and Fig. 4 A-4C, by separating step by above-mentioned moulding bodies 600 in level side
Cut to vertical direction along multiple Cutting Roads 620, after cutting off each sidewall region resin portion 300b, that is, complete singulating
Operation and multiple LED encapsulation structures 100 that this case can be obtained.
It should be noted that in step 902, the mode in potting resin portion 300 can select to use insert molding
Mode come potting resin portion 300 in space to form moulding bodies 600.When potting resin portion 300, (figure is not for upper/lower die
Show) front of conductive frame 200 can be clamped up and down with the back side, and resin portion 300 can be then filled in space.As later
Second embodiment, in subsequent applications, if it is considered that increase reflectivity, then still further can design multiple in upper/lower die
Projection, to retain the position for reflecting cup portion 310, therefore after reflection cup portion 310 completes, metal area 210 will be in reflector
The bottom surface in portion 310 is exposed.
It is to define multiple pre-cut grooves 610 respectively there is a gash depth DG as shown in Figure 1B, 3B in the present invention, it is multiple
Communication region 220 respectively has a communication region thickness TC, and multiple metal areas 210 respectively have a metal area thickness TM.Consequently, it is possible to work as
Metal area thickness TM is more than communication region thickness TC, and gash depth DG is less than more than communication region thickness TC and gash depth DG
Or during equal to metal area thickness TM, pre-cut groove 610 caused by the pre-cut step of progress step 903 can only will cut off multiple
It is area 200, without cutting off multiple metal areas 210.
In addition, in the separating step of step 904, the object that multiple Cutting Roads 620 are cut is that moulding bodies 600 are had
Some resin portions 300, therefore multiple metal areas 210 can't be cut or be touched to the formation of multiple Cutting Roads 620.
It is noted that the width of Cutting Road 620 depicted in Fig. 4 B is less than the width of pre-cut groove 610, therefore
After singulating LED encapsulation structure 100 is formed, the communication region 200 remained after pre-cut groove 610 will be far from sidewall region tree
Fat portion 300b lateral surface, and coated in welding process afterwards by solder, therefore can therefore reach makes communication region 200 will not
It is revealed in the purpose of the side of LED encapsulation structure 100.
Second aspect of first embodiment as shown in figures 5a-5c, manufacture method of the invention can also include a nurse tree
Fat filling step, a protection resin 700 is selectively filled in multiple pre-cut grooves 610 by it.
In other words, after the pre-cut step of step 903 is completed, optionally protection resin 700 is filled in multiple pre-
In dissected valley groove 610, to strengthen after pre-cut step for the protection for the metal area 210 for being exposed to side.Specifically, such as
Shown in Fig. 5 B, 5C, because protection resin 700 can be only filled in multiple pre-cut grooves 610, therefore protect resin 700 can't shape
Into at calking area resin portion 300a.
Afterwards, as shown in figs 6 a-6 c, the separating step of step 904 can be carried out again, make multiple Cutting Roads 620 in level side
To with vertical direction cutting moulding bodies 600 possessed by resin portion 300 with protection resin 700, that is, complete singulating operation and can
Obtain multiple LED encapsulation structures 100 of this case.
The manufacture method of the present invention can more include a die bond step, a bonding wire step and a filler step, and the die bond walks
Suddenly before, the bonding wire step and the visual different demands of filler step optionally put on pre-cut step or pre-cut is put on
After step, a LED chip 400 is fixed on one of two metal areas 210.
In the first embodiment of the present invention, if being not filled with protecting resin 700 after the pre-cut step of step 903, and
Separating step is directly carried out with step 904, then can finally obtain the first aspect of LED encapsulation structure 100 as shown in Figure 7.This
Though when below the sides of two metal areas 210 do not covered by sidewall region resin portion 300b because in follow-up welding to be formed
During light-emitting device, the side of two metal areas 210 can be coated by solder, therefore its finished product can't have metal area or connection
It is situation of the area exposed to the side surface of LED encapsulation structure.
Conversely, in the first embodiment of the present invention, if the filling protection resin 700 after the pre-cut step of step 903,
It is continuous that separating step is carried out with step 904, then it can finally obtain the second aspect of LED encapsulation structure 100 as shown in Figure 8.Now,
By the side of two metal areas 210 of lower section has been coated by protection resin 700, therefore be equally not in metal area or communication region
Situation exposed to the side surface of LED encapsulation structure.
In other words, in the first embodiment of the present invention, as shown in Figure 1A, multiple metal areas 210 can also included multiple
Group time conductive frame 210 ', and multiple groups conductive frames 210 ' respectively have two high taiwan areas 212 (i.e.：Metal area 210) so that one
LED chip 400 may be disposed at one of two high taiwan areas 212 and is electrically connected with, so as to obtain such as Fig. 7 or Fig. 8 in final
Depicted LED encapsulation structure 100.
The design such as aforementioned first embodiment is carried out because the power of LED chip constantly increases, therefore by LED encapsulation structure
When, when electrode and crystal bonding area are arranged at into same position, the heat energy that LED chip is distributed may result in the effect drop of conduction
It is low, or cause thermal stress and depart from the routing area of LED chip and electrode, therefore in the second embodiment of the present invention,
Can be by the way of thermoelectricity separation (i.e.：Make electrode and the separately positioned mode in crystal bonding area) carry out the design of conductive frame 200.
As shown in Figure 10, in the second embodiment of the present invention, multiple metal areas 210 of conductive frame 200 can also wrapped
Containing multiple groups conductive frames 210 ".Therefore, in second embodiment as depicted, multiple groups times conductive frame 210 " respectively includes
One crystal bonding area 214 and two electrodes 216,218, and before the separating step of step 904 is carried out, each crystal bonding area 214 is by bigeminy
It is that area 220 is connected with two electrodes 216,218 respectively, and is equally by multiple communication regions between multiple secondary conductive frames 210 "
220 are attached.
Two electrodes 216,218 (being respectively positive and negative electrode) are located at the relative both sides in crystal bonding area 214, while adjacent time respectively
Two electrodes 216,218 are also no longer connected with each other each other possessed by conductive frame 210 ".In addition, two electrodes 216,218
Area can typically be less than the area of crystal bonding area 214, avoid causing the unstable of support because electrode area is excessive.Die bond
Area 214 is also connected with each other by communication region 220 simultaneously each other, and the communication region 220 for connecting each crystal bonding area 214 at least must
Must two or more, lift the stability for the support that multiple secondary conductive frames 210 " are formed.
Communication region 220 between two electrodes 216,218 and crystal bonding area 214, and the contact between each crystal bonding area 214
Area 220, its metal width simultaneously necessarily need not be identical.For example, as depicted in Figure 10, due to crystal bonding area 214
The quantity of communication region 220 each other is more, there is provided stability it is higher, therefore metal width possessed by communication region 220 can
With the metal width less than the communication region 220 between two electrodes 216,218 and crystal bonding area 214, but not in this, as limitation.
In addition, in Figure 10, though the quantity of the communication region 220 between each secondary conductive frame 210 " is with four (two levels
The inclination communication region 220 of communication region 220, two) to present, but also can be according to the quantity of different demand progress communication regions 220
Adjustment, to provide higher stability.
Therefore, in the second embodiment shown in Figure 10, in structure, LED encapsulation structure 100 ' removes time conductive frame
Two is high possessed by the electrode 216,218 of crystal bonding area 214 and two possessed by 210 " and the secondary conductive frame 210 ' of first embodiment
Outside taiwan area 212 has differences, step 901,902,903 and 904 can all be same as first embodiment and put on second embodiment
On.
Specifically, in the conductive frame 200 mentioned by step 901, multiple metal areas 210 and multiple communication regions 220 etc.
Content is all found in Figure 10, and as illustrated, between multiple crystal bonding areas 214, and each crystal bonding area 214 and (just) electrode 216,
It is to be attached by multiple communication regions 220 with different metal width between (negative) electrode 218.
Then, also referring to step 902 and Figure 11 A-11B, when in potting resin portion 300 on conductive frame 200 with shape
Into after moulding bodies 600, part resin portion 300 can be filled in the sky between crystal bonding area 214, (just) electrode 216, (negative) electrode 218
Gap, so as to form calking area resin portion 300a, the resin portion 300 of another part can then be formed at communication region 220, (just) electrode
216 and (negative) electrode 218 on and part covering communication region 220, (just) electrode 216 and (negative) electrode 218, so as to form sidewall region
Resin portion 300b.Now, conductive frame 200 is the bottom surface for being revealed in resin portion 300, and the top surface of resin portion 300 is relative to solid
A reflection cup portion 310 can be formed at crystalline region 214, (just) electrode 216 and (negative) electrode 218.
When reflecting cup portion 310 in design, the position in reflection cup portion 310 bottom-side metal area 210 must be considered；Especially, Ying Jiang
Area exposed to the crystal bonding area 214 of reflection cup portion 310 bottom surface, two electrodes 216,218 are should be greater than exposed to reflection cup portion 310 bottom
The area in face.In addition, resin portion 300 can also be extended to the bottom surface of reflection cup portion 310, and only expose crystal bonding area 214 and routing
The position in area.
When design reflects cup portion 310, it must also pay attention to simultaneously in conductive frame 200 in addition, adjacent positive and negative electrode 216,218
Distance each other, optimal mode for must be less than or equal to neighboring reflection wall thickness, and adjacent crystal bonding area 214 each other it
Between distance, the same thickness that must be most preferably less than or equal to neighboring reflection wall.
Therefore, it is each when cutting off connection on moulding bodies 600 by pre-cut step also referring to step 903 and Figure 12 A-12B
During multiple communication regions 200 between crystal bonding area 214, (just) electrode 216 and (negative) electrode 218, because multiple communication regions 200 are shapes
Into in the bottom surface of moulding bodies 600, therefore after pre-cut step is carried out, the bottom surface 600a of moulding bodies 600 will form multiple pre-cut grooves
610, it is electrically connected with ensuring to be not present between crystal bonding area 214 and (just) electrode 216, (negative) electrode 218 in moulding bodies 600.
On the other hand, multiple pre-cut grooves 610 that pre-cut step is formed are cut along a single direction, and pre-cut step
Sidewall region resin portion 300b will not be cut off.
Similar in appearance to first embodiment, after the pre-cut step of step 903, as shown in figure 13, can be filled out by a protection resin
Step is filled, selectively a protection resin 700 is filled in multiple pre-cut grooves 610, can be because of solder during avoiding follow-up scolding tin
Short-circuit result caused by penetrating into pre-cut groove 610.
Finally, also referring to step 904 and Figure 14 A-14B, by separating step by above-mentioned moulding bodies 600 in level
Direction is cut with vertical direction along multiple Cutting Roads 620, is contacted so as to cut off each sidewall region resin portion 300b with remaining
Behind area 200, that is, complete singulating operation and multiple LED encapsulation structures 100 ' of second embodiment can be obtained.
In other words, it is continuous that separation step is carried out with step 904 if resin 700 is protected in filling after the pre-cut step of step 903
Suddenly, then the present invention can most obtain LED encapsulation structure 100 ' as shown in figures 15 a-15 c at last.Wherein, implement different from first
Example, it for three metal areas, three metal area is respectively a die bond that an at least metal area 210 possessed by LED encapsulation structure 100 ', which is,
Area 214, a positive electrode 216 and a negative electrode 218, LED chip 400 are disposed on crystal bonding area 214, and crystal bonding area 214, positive electricity
It is not present and is electrically connected between pole 216 and negative electrode 218.
In the design of above-mentioned conductive frame 200, as shown in Figure 16 A, in addition can by the electrode 216 of crystal bonding area 214 and two,
218 each other connection communication regions 220 be built among resin portion 300 close to bottom surface position (i.e.：Under communication region 220
Side is still provided with a very thin floor calking area resin portion 300a), and the thickness of this communication region 220 will be less than the electricity of crystal bonding area 214 and two
Metal thickness possessed by pole 216,218.In this way, after the pre-cut step of step 903 is carried out, as shown in fig 16b, can equally incite somebody to action
Electrically being separated between the electrode 216,218 of crystal bonding area 214 and two, but because the position of communication region 220 is built in resin portion
Close to (indirect to be exposed to bottom surface) at bottom surface among 300, therefore the depth of pre-cut groove 610 is deeper, is cut off so as to priority
The calking area resin portion 300a of lower section thin layer and communication region 220；In this way, following can equally avoid solder from penetrating into advance when welding
Dissected valley groove 610 and cause short circuit phenomenon.As shown in figure 16 c, protection resin 700 can be equally filled in pre- dissected valley by this aspect
In groove 610, and phenomenon that may be short-circuit is avoided to produce.Finally, then as seen in fig. 16d, step 904 is carried out, along multiple Cutting Roads
620 are cut and cut off each sidewall region resin portion 300b with behind remaining communication region 200, that is, completing singulating operation and obtaining
Multiple LED encapsulation structures 100 '.
Summary, due to communication region possessed by the manufacture method and the LED encapsulation structure of LED encapsulation structure of the present invention
The bottom surface of moulding bodies can be only revealed in after pre-cut step and separating step or is similar to the position of bottom surface, and each communication region is no longer
The electric connection between metal area two-by-two is assisted, so even the LED encapsulation structure suffers the powder of working environment after installing and using
Dirt, which is stained with, to be covered, or the LED encapsulation structure has phenomenon of solder rising generation after installation, and the present invention can still maintain the electricity of LED encapsulation structure
Property characteristic, without have short circuit situation occur.In addition, in second embodiment, due to die bond possessed by LED encapsulation structure
Area and two electrodes be adopt thermoelectricity separation set-up mode, even if therefore exposed situation be present in the communication region on crystal bonding area, as
Result non-conductive and that short circuit can be avoided.
In embodiments of the invention, the resin portion that is filled in space, heat curing-type then can be preferably selected on its material
Resin.Multiple material can be included in the resin simultaneously to adapt to different demands, such as can be with wherein in the thermosetting resin
Increase the reliability of resin including Triazine epoxy, or SiO2 or TiO2 can be included to increase reflectivity, wherein
The SiO2 or TiO2 content can then be higher than more than the 70% of overall resin percentage by weight, therefore except crystal bonding area in itself may be used
Outside as heat sinking function, resin can also increase the radiating of LED encapsulation structure in itself because of the heat-conducting filler containing a large amount
Effect.
LED package in the present invention is mainly a kind of white light LEDs, wherein used LED chip, predominantly III-V
Race's material is formed, and is preferably the chip of material using nitridation, and the active layer of the chip can additionally contain Indium.Separately
Outside, in the selection of fluorescent material then preferably can for the combination of following fluorescent material in optionally go out：
Sr5(PO4)3Cl:Eu2+、(Sr,Ba)MgAl10O17:Eu2+、(Sr,Ba)3MgSi2O8:Eu2+、SrAl2O4:Eu2+、
SrBaSiO4:Eu2+、CdS:In、CaS:Ce3+、Y3(Al,Gd)5O12:Ce2+、Ca3Sc2Si3O12:Ce3+、SrSiON:Eu2+、ZnS:
Al3+,Cu+、CaS:Sn2+、CaS:Sn2+,F、CaSO4:Ce3+,Mn2+、LiAlO2:Mn2+、BaMgAl10O17:Eu2+,Mn2+、ZnS:Cu+,Cl-、Ca3WO6:U、Ca3SiO4Cl2:Eu2+、SrxBayClzAl2O4-z/2:Ce3+,Mn2+(X:0.2、Y:0.7、Z:1.1)、
Ba2MgSi2O7:Eu2+、Ba2SiO4:Eu2+、Ba2Li2Si2O7:Eu2+、ZnO:S、ZnO:Zn、Ca2Ba3(PO4)3Cl:Eu2+、
BaAl2O4:Eu2+、SrGa2S4:Eu2+、ZnS:Eu2+、Ba5(PO4)3Cl:U、Sr3WO6:U、CaGa2S4:Eu2+、SrSO4:Eu2+,Mn2 +、ZnS:P、ZnS:P3-,Cl-、ZnS:Mn2+、CaS:Yb2+,Cl、Gd3Ga4O12:Cr3+、CaGa2S4:Mn2+、Na(Mg,Mn)2LiSi4O10F2:Mn、ZnS:Sn2+、Y3Al5O12:Cr3+、SrB8O13:Sm2+、MgSr3Si2O8:Eu2+,Mn2+、α-SrO·3B2O3:
Sm2+、ZnS-CdS、ZnSe:Cu+,Cl、ZnGa2S4:Mn2+、ZnO:Bi3+、BaS:Au,K、ZnS:Pb2+、ZnS:Sn2+,Li+、ZnS:
Pb,Cu、CaTiO3:Pr3+、CaTiO3:Eu3+、Y2O3:Eu3+、(Y,Gd)2O3:Eu3+、CaS:Pb2+,Mn2+、YPO4:Eu3+、
Ca2MgSi2O7:Eu2+,Mn2+、Y(P,V)O4:Eu3+、Y2O2S:Eu3+、SrAl4O7:Eu3+、CaYAlO4:Eu3+、LaO2S:Eu3+、
LiW2O8:Eu3+,Sm3+、(Sr,Ca,Ba,Mg)10(PO4)6Cl2:Eu2+,Mn2+、Ba3MgSi2O8:Eu2+,Mn2+、ZnS:Mn2+,Te2 +、Mg2TiO4:Mn4+、K2SiF6:Mn4+、SrS:Eu2+、Na1.23K0.42Eu0.12TiSi4O11、Na1.23K0.42Eu0.12TiSi5O13:Eu3 +、CdS:In,Te、CaAlSiN3:Eu2+、CaSiN3:Eu2+、(Ca,Sr)2Si5N8:Eu2+、Eu2W2O7。
Although the present invention is disclosed as above with preferred embodiment, so it is not limited to the present invention, any this area skill
Art personnel, without departing from the spirit and scope of the present invention, when a little modification and perfect, therefore the protection model of the present invention can be made
Enclose to work as and be defined by what claims were defined.
Claims (12)
1. a kind of manufacture method of LED (light emitting diode, light emitting diode) encapsulating structure, includes following step
Suddenly：
A conductive frame is provided, the conductive frame has multiple metal areas and multiple communication regions, and at least one of the plurality of
Metal area is connected with the plurality of communication region；
In filling a resin portion on the conductive frame to form a moulding bodies；
The plurality of communication region on the moulding bodies is cut off by a pre-cut step；And
The moulding bodies are cut into multiple LED encapsulation structures by a separating step；
Wherein, the plurality of communication region is disposed on a bottom surface of the moulding bodies, and the pre-cut step is applied to the moulding bodies
The bottom surface.
2. manufacture method as claimed in claim 1, it is characterised in that after the pre-cut step, in the bottom surface of the moulding bodies
Form multiple pre-cut grooves.
3. manufacture method as claimed in claim 2, it is characterised in that the plurality of pre-cut groove respectively has a gash depth, should
Multiple communication regions respectively have a communication region thickness, and the plurality of metal area respectively has a metal area thickness, and the gash depth is more than should
Communication region thickness and it is less than or equal to the metal area thickness.
4. manufacture method as claimed in claim 3, further including a protection resin filling step, selectively resin is protected by one
It is filled in the plurality of pre-cut groove.
5. manufacture method as claimed in claim 4, it is characterised in that the pre-cut step is cut along a single direction,
And the pre-cut step does not cut off the resin portion.
6. manufacture method as claimed in claim 1, a die bond step, a bonding wire step and a filler step are further included, and should
After die bond step, the bonding wire step and the filler step are applied to before the pre-cut step or put on the pre-cut step.
7. manufacture method as claimed in claim 1, it is characterised in that the plurality of metal area includes multigroup secondary conductive frame, and
Multigroup secondary conductive frame respectively includes two high taiwan areas.
8. manufacture method as claimed in claim 1, it is characterised in that the plurality of metal area includes multigroup secondary conductive frame, and
Multigroup secondary conductive frame respectively includes a crystal bonding area and two electrodes.
9. manufacture method as claimed in claim 1, it is characterised in that the plurality of communication region is to be exposed to the bottom surface.
10. a kind of LED encapsulation structure, comprising：
One conductive frame, there is an at least metal area and an at least communication region；
One resin portion, the conductive frame periphery is disposed on to form a reflection cup portion；
One LED chip, be disposed on the reflector this at least on a metal area；And
One packaging plastic, it is to be filled in the reflection cup portion；
Wherein, when the resin portion is arranged at the periphery of the conductive frame, the conductive frame is the bottom surface for being revealed in the resin portion,
An at least communication region is at least one side for being exposed to the LED encapsulation structure, and an at least metal area with this at least one
It is that area does not electrically conduct each other.
11. LED encapsulation structure as claimed in claim 10, it is characterised in that an at least metal area is two metal areas, and this two
Metal area is two electrode portions, and the LED chip is disposed on one of two electrode portion.
12. LED encapsulation structure as claimed in claim 10, it is characterised in that an at least metal area is three metal areas, and this three
Metal area is respectively a crystal bonding area, a positive electrode and a negative electrode, and the LED chip is disposed on the crystal bonding area.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662331984P | 2016-05-05 | 2016-05-05 | |
| US62/331,984 | 2016-05-05 |
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| CN107346800A true CN107346800A (en) | 2017-11-14 |
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| CN201710286935.4A Pending CN107346799A (en) | 2016-05-05 | 2017-04-27 | Enclosure support structure and its manufacture method |
| CN201710312765.2A Withdrawn CN107346800A (en) | 2016-05-05 | 2017-05-05 | The manufacture method of LED encapsulation structure and the LED encapsulation structure |
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| CN109390127B (en) * | 2018-11-12 | 2024-01-30 | 矽力杰半导体技术(杭州)有限公司 | Supportable package device and package assembly |
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| CN1329364A (en) * | 2000-06-09 | 2002-01-02 | 三洋电机株式会社 | Optical illuminating device, its manufacturing methd and illuminator used the same |
| JP2006303397A (en) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Works Ltd | Light emitting device |
| CN202434566U (en) * | 2011-12-21 | 2012-09-12 | 佛山市国星光电股份有限公司 | Novel TOP light-emitting diode (LED) frame and TOP LED device manufactured by novel TOP LED frame |
| US20130049061A1 (en) * | 2011-08-24 | 2013-02-28 | Toyoda Gosei Co., Ltd. | Light-emitting device and method of manufacturing the same |
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| US10431567B2 (en) * | 2010-11-03 | 2019-10-01 | Cree, Inc. | White ceramic LED package |
| KR20100083907A (en) * | 2009-01-15 | 2010-07-23 | 설명순 | Led package and method for manufacturing the same |
| CN201829532U (en) * | 2010-09-28 | 2011-05-11 | 东莞市良友五金制品有限公司 | Paster LED bracket |
| CN102651443B (en) * | 2011-02-28 | 2015-01-07 | 展晶科技(深圳)有限公司 | Conductive base plate for LED encapsulation |
| US20130009191A1 (en) * | 2011-07-04 | 2013-01-10 | Lite-On Singapore Pte. Ltd. | Surface mounted led package and manufacturing method therefor |
| TWI497779B (en) * | 2012-07-11 | 2015-08-21 | Fusheng Electronics Corp | Method for manufacturing led leadframe |
| CN204289519U (en) * | 2014-12-25 | 2015-04-22 | 深圳市安普光光电科技有限公司 | Tetrad full-color light-emitting diode and LED show module |
-
2017
- 2017-04-25 TW TW106113775A patent/TW201806201A/en unknown
- 2017-04-27 CN CN201710286935.4A patent/CN107346799A/en active Pending
- 2017-05-05 CN CN201710312765.2A patent/CN107346800A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1329364A (en) * | 2000-06-09 | 2002-01-02 | 三洋电机株式会社 | Optical illuminating device, its manufacturing methd and illuminator used the same |
| JP2006303397A (en) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Works Ltd | Light emitting device |
| US20130049061A1 (en) * | 2011-08-24 | 2013-02-28 | Toyoda Gosei Co., Ltd. | Light-emitting device and method of manufacturing the same |
| CN202434566U (en) * | 2011-12-21 | 2012-09-12 | 佛山市国星光电股份有限公司 | Novel TOP light-emitting diode (LED) frame and TOP LED device manufactured by novel TOP LED frame |
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| Publication number | Publication date |
|---|---|
| CN107346799A (en) | 2017-11-14 |
| TW201806201A (en) | 2018-02-16 |
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Application publication date: 20171114 |