CN104103748A - Light-emitting-diode packaging structure and manufacturing method thereof - Google Patents
Light-emitting-diode packaging structure and manufacturing method thereof Download PDFInfo
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- CN104103748A CN104103748A CN201310121676.1A CN201310121676A CN104103748A CN 104103748 A CN104103748 A CN 104103748A CN 201310121676 A CN201310121676 A CN 201310121676A CN 104103748 A CN104103748 A CN 104103748A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000004806 packaging method and process Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000003860 storage Methods 0.000 claims description 15
- 238000000465 moulding Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000005452 bending Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 9
- 230000006978 adaptation Effects 0.000 description 4
- 229920002521 macromolecule Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Abstract
Disclosed is a manufacturing method of a light-emitting-diode packaging structure and the method includes the following steps: providing a lead frame, wherein a plurality of columns of first and second electrodes are arrayed on the lead frame in a staggered manner, first and second connecting and guiding electrodes respectively extend from two opposite ends of the outer sides of the first and second electrodes, and first and second connecting and guiding electrodes at the same column are connected serially through connection strips respectively; forming reflection cups, which surround the first and second electrodes and are provided with accommodating grooves, between adjacent connection strips, wherein the first and second connecting and guiding electrodes are exposed to the reflection cups and the first and second electrodes are embedded in the reflection cups; removing the connection strips at the two opposite sides of the reflection cups; arranging light-emitting-diode chips in the accommodating grooves and electrically connecting the light-emitting-diode chips with the first and second electrodes; forming package layers which cover the light-emitting-diode chips; and transversely cutting the reflection cups and the lead frame. The invention also provides the light-emitting-diode packaging structure. The first and second electrodes are embedded in the reflection cups and the first and second connecting and guiding electrodes are exposed to the reflection cups so that an adaption degree of the light-emitting-diode packaging structure is effectively improved.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements, particularly a kind of package structure for LED and manufacture method thereof.
Background technology
Light-emitting diode (light emitting diode, LED), as a kind of efficient light emitting source, has the various features such as environmental protection, power saving, life-span length and is applied to widely various fields.
Before in being applied to specific field, light-emitting diode also needs to encapsulate, and to protect light-emitting diode chip for backlight unit, thereby obtains higher luminous efficiency and longer useful life.
The common first moulding reflector of general package structure for LED is attached at electrode bending on the bottom surface and side of reflector after reflector moulding again.Yet the adaptation of the package structure for LED that this method is made is not good, between the electrode in encapsulating structure and reflector, in conjunction with not tight, electrode in use easily becomes flexible or comes off.
Summary of the invention
In view of this, be necessary to provide a kind of package structure for LED and manufacture method thereof with better adaptation.
A manufacture method for package structure for LED, comprises the following steps: provide and be equiped with multiple row
The lead frame of the first electrode and the second electrode, described the first electrode and the second electrode are along being laterally staggered and being arranged in pairs on lead frame, described the first electrode stretches out and forms one first and connect and draw electrode away from one end of the second electrode, described the second electrode stretches out and forms one second and connect and draw electrode away from one end of the first electrode, in same column, first of adjacent the first electrode connects and draws electrode and be longitudinally connected in series by the first intercell connector, and in same column, second of adjacent the second electrode connects and draw electrode and be longitudinally connected in series by the second intercell connector; On lead frame, between adjacent the first intercell connector and the second intercell connector, form the reflector around the first electrode and the second electrode, described reflector has the storage tank that holds light-emitting diode chip for backlight unit, described the first electrode and the second electrode are embedded in reflector, and described first connects and draw electrode and second and connect and draw electrode and protrude out outside reflector the relative both sides of self-reflection cup respectively; Remove the first intercell connector and the second intercell connector that expose to the relative both sides of reflector; Light-emitting diode chip for backlight unit is set in storage tank and light-emitting diode chip for backlight unit is electrically connected to respectively with the first electrode and the second electrode; In storage tank, form the encapsulated layer of covering luminousing diode chip; And transverse cuts reflector and lead frame are to form a plurality of independently package structure for LED.
A package structure for LED, this package structure for LED is made by above-mentioned manufacture method.
Compared with prior art, in the manufacture method of package structure for LED of the present invention, reflector is formed between two adjacent the first intercell connectors and the second intercell connector, the first electrode and the second electrode are embedded in reflector after reflector moulding, in the process of reflector moulding can't with first connect and draw electrode and second and connect and draw electrode and interfere, after reflector moulding, first connects and draws electrode and second and connect and draw the relative both sides that electrode exposes to reflector, what in the made package structure for LED of above-mentioned manufacture method, the first electrode and the second electrode were combined with reflector is more firm, and then can imitate the adaptation that promotes whole package structure for LED.
With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments.
Accompanying drawing explanation
Fig. 1 is the manufacture method flow chart of the package structure for LED of first embodiment of the invention.
Fig. 2 is the schematic top plan view of the element of gained in the manufacture method step S101 of package structure for LED shown in Fig. 1.
Fig. 3 is the part schematic diagram of gained element in Fig. 2.
Fig. 4 is that element shown in Fig. 3 is along the generalized section of IV-IV line.
Fig. 5 is the elevational schematic view of element shown in Fig. 3.
Fig. 6 is that element shown in Fig. 3 is along the generalized section of VI-VI line.
Fig. 7 is the generalized section of element shown in Fig. 2 while being positioned in mould.
Fig. 8 is the elevational schematic view (wherein the bottom of bed die be hidden) of element shown in Fig. 2 while being positioned in mould.
Fig. 9 is the schematic top plan view of the element of gained in the manufacture method step S102 of package structure for LED shown in Fig. 1.
Figure 10 is the part schematic diagram of gained element in Fig. 9.
Figure 11 is that element shown in Figure 10 is along the generalized section of XI-XI line.
Figure 12 is the elevational schematic view of element shown in Figure 10.
Figure 13 is the schematic top plan view of the package structure for LED of gained in the manufacture method step S106 of package structure for LED shown in Fig. 1.
Figure 14 is that package structure for LED shown in Figure 13 is along the generalized section of XIV-XIV line.
Figure 15 is the elevational schematic view of package structure for LED shown in Figure 13.
Figure 16 is the first electrode of using in the manufacture method of package structure for LED of second embodiment of the invention and the schematic top plan view of the second electrode.
Figure 17 is that the first electrode shown in Figure 16 and the second electrode are along the generalized section of XVII-XVII line.
Figure 18 is the elevational schematic view of the first electrode shown in Figure 16 and the second electrode.
Main element symbol description
| The first electrode | 10、10a |
| First connects and draws electrode | 11、11a |
| The second electrode | 20、20a |
| Second connects and draws electrode | 21、21a |
| The first intercell connector | 30、30a |
| The second intercell connector | 31、31a |
| Obstruct groove | 40 |
| Lead frame | 50 |
| Mould | 60 |
| Mold | 61 |
| Bed die | 62 |
| Reflector | 70 |
| Storage tank | 71 |
| Light-emitting diode chip for backlight unit | 80 |
| Wire | 81、82 |
| Encapsulated layer | 90 |
| Package structure for LED | 100 |
| First body | 101、101a |
| The first connecting portion | 102、102a |
| Guide hole | 103、203、103a、203a |
| The first thickened part | 104、104a |
| Groove | 105、205 |
| The second body | 201、201a |
| The second connecting portion | 202、202a |
| The second thickened part | 204、204a |
| Upper surface | 1011、2011、111、301 |
| Lower surface | 1012、2012、112、302 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Fig. 1 is the manufacture method flow chart of the package structure for LED of first embodiment of the invention, and the manufacture method of this package structure for LED comprises the steps:
Step S101, refer to Fig. 2, the lead frame 50 that is equiped with multiple row the first electrode 10 and the second electrode 20 is provided, this first electrode 10 and the second electrode 20 are along being laterally staggered and being arranged in pairs on lead frame 50, this first electrode 10 stretches out and forms one first and connect and draw electrode 11 away from one end of the second electrode 20, this second electrode 20 stretches out and forms one second and connect and draw electrode 21 away from one end of the first electrode 10, in same column, first of adjacent the first electrode 10 connects and draws electrode 11 and be longitudinally connected in series by the first intercell connector 30, in same column, second of adjacent the second electrode 20 connects and draws electrode 21 and be longitudinally connected in series by the second intercell connector 31.
On this lead frame 50, be also provided with the good some metal fines of ductility (not indicating), this metal fine is for being individually fixed in lead frame 50 by described the first electrode 10 and the second electrode 20.
See also Fig. 3 to Fig. 6, this first electrode 10 and the second electrode 20 are all strip.This first connects and draws electrode 11 and outwards extend to form downwards from one end away from the second electrode 20 of the first electrode 10 again.This second connect draw electrode 21 from one end away from the first electrode 10 of the second electrode 20 outwards downwards one extend to form.This first connects and draws electrode 11 and along the width in the direction of the first intercell connector 30, be less than the width of the first electrode 10.This second connects and draws electrode 21 and along the width in the direction of the second intercell connector, be less than the width of the second electrode 20.
In the present embodiment, this first electrode 10 comprises the first body 101 of a lengthwise and the first connecting portion 102 being extended outward away from the end of the second electrode 20 by this first body 101.This first connects and draws electrode 11 and extended by the first connecting portion 102 of this first electrode 10.This second electrode 20 comprises the second body 201 of a lengthwise and the second connecting portion 202 being extended outward away from the end of the first electrode 10 by this second body 201.This second connects and draws electrode 21 and stretched out by the second connecting portion 202 of this second electrode 20.
This first electrode 10 comprises upper surface 1011 and the lower surface 1012 being oppositely arranged.On this first electrode 10, offer at least one guide hole 103 that runs through its upper surface 1011 and lower surface 1012.This second electrode 20 comprises upper surface 2011 and the lower surface 2012 being oppositely arranged.On this second electrode 20, offer at least one guide hole 203 that runs through its upper surface 2011 and lower surface 2012.
The lower surface 1012 of this first electrode 10 and the lower surface 2012 of the second electrode 20 protrude and extend to form the first thickened part 104 and the second thickened part 204 downwards respectively.This first thickened part 104 is extended with the second relative two ends, electrode 20 inner sides from the first electrode 10 respectively vertically downward with the second thickened part 204.The width of this first thickened part 104 (along the width on the first intercell connector 30 bearing of trends, longitudinally width) is less than the width of the first corresponding electrode 10.The width of this second thickened part 204 (along the width on the second intercell connector 31 bearing of trends, longitudinally width) is less than the width of the second corresponding electrode 20.
This first intercell connector 30 is a plurality of and all at same column adjacent first, connects and draw between electrode 11.This second intercell connector 31 is for a plurality of and all in adjacent second the connecing and draw between electrode 21 of same column.This first intercell connector 30 comprises upper surface 301 and the lower surface 302 being oppositely arranged.This first connects and draws electrode 11 and comprise upper surface 111 and the lower surface 112 being oppositely arranged.The upper surface 301 of this first intercell connector 30 and first connects that to draw the upper surface 111 of electrode 11 concordant, and the lower surface 302 of this second intercell connector 31 and first connects the lower surface 112 concordant (referring to Fig. 6) that draws electrode 11.In the same manner, this second intercell connector 31 comprises upper surface and the lower surface (not indicating) being oppositely arranged, this second connects and draws electrode 21 and comprise the upper surface that is oppositely arranged and lower surface (not indicating), the upper surface of this second intercell connector 31 and second connects that to draw the upper surface of electrode 21 concordant, and the lower surface of this second intercell connector 31 and second connects that to draw the lower surface of electrode 21 concordant.
Between the first adjacent electrode 10 and the second electrode 20, form an obstruct groove 40 and block this first electrode 10 and the second electrode 20 with insulating properties.This first thickened part 104 and the first intercell connector 30 and the first electrode 10 jointly enclose and form a groove 105.This second thickened part 204 and the second intercell connector 31 and the second electrode 20 jointly enclose and form a groove 205.The top of this groove 105 is communicated with guide hole 103.The top of this groove 205 is communicated with guide hole 203.This obstruct groove 40 is communicated with along horizontal (length direction of the first electrode 10 and the second electrode 20) with groove 105, groove 205 respectively.
In the present embodiment, this first connecting portion 102 extends from first body 101 one, this first connecting portion 102 is less than the width of first body 101 along the width on the bearing of trend of the first intercell connector 30, this second connecting portion 202 extends from the second body 201 one, and this second connecting portion 202 is less than the width of the second body 201 along the width on the bearing of trend of the second intercell connector 31.Understandably, this first connecting portion 102 and the separated setting of first body 101 in other embodiments, this second connecting portion 202 and the separated setting of the second body 201.It is also understood that ground, this first electrode 10 can not comprise the first connecting portion 102, and this first connects and draw electrode 11 the direct one in end away from the second electrode 20 stretches out by this first body 101; This second electrode 20 can not comprise the second connecting portion 202, and this second connects and draw electrode 21 the direct one in end away from the first electrode 10 stretches out by this second body 201.
Step S102 please refer to Fig. 9 to Figure 10, forms the reflector 70 around the first electrode 10 and the second electrode 20 on lead frame 50 between adjacent the first intercell connector 30 and the second intercell connector 31.This reflector 70 have hold light-emitting diode chip for backlight unit 80(and refer to Figure 14) storage tank 71.This first electrode 10 and the second electrode 20 are all embedded in reflector 70.This first connects and draws electrode 11 and second and connect the relative both sides of drawing electrode 21 self-reflection cups 70 and protrude from outside reflector 70.
See also Figure 11 and Figure 12, this storage tank 71 upwards runs through this reflector 70 from the upper surface 2011 of the first electrode 10 upper surfaces 1011 and the second electrode 20 simultaneously.The part of the part of the upper surface 1011 of this first electrode 10 and these the second electrode 20 upper surfaces 2011 all exposes to the bottom of this storage tank 71.Described the first thickened part 104 and the second thickened part 204 and this storage tank 71 are over against setting.This first thickened part 104 all exposes to the bottom of reflector 70 away from bottom surface (not indicating) and second thickened part 204 of the first electrode 10 away from the bottom surface (not indicating) of the second electrode 20.
Please also refer to Fig. 7 to Fig. 8, this reflector 70 takes shape among a mould 60 in the present invention, and this mould 60 comprises mold 61 and the bed die 62 being oppositely arranged.This mold 61 and bed die 62 surround a confined space of accommodating this lead frame 50 (not indicating) jointly.
The material of this reflector 70 is epoxy resin, silicones, PPA(polyphtalamide resin) etc. any in macromolecular compound, and be shaped in mould 60 by the mode of injection moulding.
For the macromolecular compound of this reflector 70 of moulding, after high-temperature heating, become the mould material (not shown) of melting.This mould material is in runner 611 is injected into mould 60.This mould material flows in groove 105 and groove 205 and obstruct groove 40 through guide hole 103 and guide hole 203.This mould material is stopped and around the first thickened part 104 and the second thickened part 204, flows to form default reflector 70 shapes between the first intercell connector 30 and the second intercell connector 31 by the first intercell connector 30 and the second intercell connector 31.
After reflector 70 moulding, away from the bottom surface of the first electrode 10 (not indicating) and the second thickened part 204, the bottom surface (sign) away from the second electrode 20 all exposes to outside reflector 70 this first thickened part 104.This guide hole 103,203 is all reflected cup 70 and fills.
Step S103, removes the first intercell connector 30 and the second intercell connector 31 that expose to reflector 70 relative both sides.
In the present embodiment, this first intercell connector 30 and the second intercell connector 31 are all removed by the mode of machine cuts, in cutting process for preventing that metal burr can select the marginal portion cutting from contiguous the first intercell connectors 30 of this reflector 70 and the second intercell connector 31, in other embodiment, can also select the mode of laser cutting to cut the first intercell connector 30 and the second intercell connector 31, thereby effectively prevent the generation of metal burr.
Understandably, after removing the first intercell connector 30 and the second intercell connector 31, can also be chosen in and expose to first of reflector 70 relative both sides and connect and draw electrode 11 and second and connect on the surface of drawing electrode 21 and the first electrode 10 and the second electrode 20 are not reflected on the surfaces that cup 70 covers and form a metal level (not shown).The material of this metal level is preferably silver, this metal level is preferably covered in and is exposed to first of reflector 70 relative both sides and connect and draw electrode 11 and second and connect on the surface of drawing electrode 21 and the first electrode 10 and the second electrode 20 are not reflected on the surfaces of cup 70 coverings by the mode of electroplating, thereby increase the reflection efficiency of the first electrode 10 and 20 pairs of light of the second electrode, can also prevent that the first electrode 10, the second electrode 20, first from connecing simultaneously draws electrode 11 and second and connects that to draw electrode 21 oxidized and affect the performance in electrical contact of electrode.
Step S104, arranges light-emitting diode chip for backlight unit 80 and is electrically connected to this first electrode 10 and the second electrode 20 storage tank 71 is interior.In the present embodiment, for light-emitting diode chip for backlight unit 80 is also protected and is further referred to Figure 14 at the encapsulated layer 90(of the interior formation covering luminousing diode chip 80 of storage tank 71).
Step S105, please also refer to Figure 13 to Figure 15, and transverse cuts reflector 70 and lead frame 50 are to form a plurality of independently package structure for LED 100.
In this package structure for LED 100, this light-emitting diode chip for backlight unit 80 is positioned at the bottom of storage tank 71.Particularly, this light-emitting diode chip for backlight unit 80 is arranged on the upper surface 1011 of the first electrode 10 and by wire 81, wire 82 and is electrically connected to the first electrode 10 and the second electrode 20 respectively.Understandably, in other embodiments, this light-emitting diode chip for backlight unit 80 can also directly be electrically connected to the first electrode 10 and the second electrode 20 by the mode of upside-down mounting (Flip-Chip).
This encapsulated layer 90 can be a kind of in silica gel, epoxy resin or other macromolecule materials.Preferably, this encapsulated layer 90 also includes fluorescent material or optics spread powder, for the light of changing or this light-emitting diode chip for backlight unit 80 of diffusion sends.
Please also refer to Figure 16 to Figure 18, the difference of the manufacture method of the second embodiment of the present invention and the first embodiment is: in the manufacture method of the second embodiment, described the first connecting portion 102a is fixing along the width on the bearing of trend of the first intercell connector 30a, and this first connecting portion 102a connects and draws electrode 11a and first reduce gradually until remain unchanged after preset width towards first from first body 101a along the width on the bearing of trend of the first intercell connector 30a, similarly, the second connecting portion 202a described in second embodiment of the invention is unfixing along the width on the bearing of trend of the second intercell connector 31a, this second connecting portion 202a connects and draws electrode 21a and first reduce gradually until remain unchanged after preset width towards second from the second body 201a along the width on the bearing of trend of the second intercell connector 31a, such set-up mode can reduce the gap between the first intercell connector 30a and first body 101a as far as possible, thereby reduce follow-up mould material required when moulding reflector 70, can effectively increase the contact area of the first electrode 10a and the second electrode 20a and reflector 70 simultaneously, thereby increase the bond strength of the first electrode 10a and the second electrode 20a and reflector 70.
In the present invention, the package structure for LED 100 of being made by the manufacture method of package structure for LED both can be used as LED of side view type encapsulating structure and also can be used as top emission type package structure for LED and use.When this package structure for LED 100 is used and be installed in circuit board (not shown) as LED of side view type encapsulating structure, this package structure for LED 100 connects and draws electrode 11 and second and connect and draw electrode 21 and be connected with external circuit by first; When package structure for LED 100 is used as top emission type package structure for LED, this package structure for LED 100 is electrically connected to external circuit structure respectively by the bottom surface of the first thickened part 104 and the bottom surface of the second thickened part 204.
In the present invention, the mode of this reflector 70 by injection moulding is one-body molded and arrange around this first electrode 10 and the second electrode 20.Compared with prior art, in the manufacture method of package structure for LED of the present invention, reflector 70 is formed between two adjacent the first intercell connectors 30 and the second intercell connector 31, the first electrode 10 and the second electrode 20 are embedded in reflector 70 after reflector 70 moulding, reflector 70 in the process of moulding can't with first connect and draw electrode 11 and second and connect and draw electrode 21 and interfere, after reflector 70 moulding, first connects and draws electrode 11 and second and connect and draw the relative both sides that electrode 21 exposes to reflector 70, combination more firm between the first electrode 10 and the second electrode 20 and reflector 70 in the made package structure for LED of above-mentioned manufacture method, can imitate the adaptation that promotes whole package structure for LED 100.This manufacture method is applicable to batch making package structure for LED 100 simultaneously, can effectively enhance productivity.
Secondly, this first thickened part 104, the second thickened part 204 can increase the bond strength of this reflector 70 and the first electrode 10, the second electrode 20, this guide hole 103, the interior trip of guide hole 203 have the macromolecular compound that forms reflector 70, also can increase the bond strength of this reflector 70 and the first electrode 10 and the second electrode 20.
In addition, in the present invention during moulding reflector 70, the bottom surface of this first thickened part 104 and the second thickened part 204 exposes to respectively the bottom of reflector 70, the heat producing during light-emitting diode chip for backlight unit 80 work can be dispersed among air by the bottom surface of the first thickened part 104 and the bottom surface of the second thickened part 204, thereby effectively promotes the radiating efficiency of this package structure for LED 100.
Will also be appreciated that for the person of ordinary skill of the art, can make other various corresponding changes and distortion by technical conceive according to the present invention, and all these change and distortion all should belong to the protection range of the claims in the present invention.
Claims (11)
1. a manufacture method for package structure for LED, comprises the following steps:
The lead frame that is equiped with multiple row the first electrode and the second electrode is provided, described the first electrode and the second electrode are along being laterally staggered and being arranged in pairs on lead frame, described the first electrode stretches out and forms one first and connect and draw electrode away from one end of the second electrode, described the second electrode stretches out and forms one second and connect and draw electrode away from one end of the first electrode, in same column, first of adjacent the first electrode connects and draws electrode and be longitudinally connected in series by the first intercell connector, and in same column, second of adjacent the second electrode connects and draw electrode and be longitudinally connected in series by the second intercell connector;
On lead frame, between adjacent the first intercell connector and the second intercell connector, form the reflector around the first electrode and the second electrode, described reflector has the storage tank that holds light-emitting diode chip for backlight unit, described the first electrode and the second electrode are embedded in reflector, and described first connects and draw electrode and second and connect and draw electrode and protrude out outside reflector the relative both sides of self-reflection cup respectively;
Remove the first intercell connector and the second intercell connector that expose to the relative both sides of reflector;
Light-emitting diode chip for backlight unit is set in storage tank and light-emitting diode chip for backlight unit is electrically connected to respectively with the first electrode and the second electrode;
In storage tank, form the encapsulated layer of covering luminousing diode chip; And
Transverse cuts reflector and lead frame are to form a plurality of independently package structure for LED.
2. the manufacture method of package structure for LED as claimed in claim 1, it is characterized in that: described first connect draw electrode from the first electrode away from one end of the second electrode first outwards again bending downwards extend to form, described first connects and draws electrode and along the width on the bearing of trend of the first intercell connector, be less than the width of the first electrode, described second connect draw electrode from the second electrode away from one end of the first electrode first outwards again bending downwards extend to form, described second connects and draws electrode and along the width on the bearing of trend of the second intercell connector, be less than the width of the second electrode.
3. the manufacture method of package structure for LED as claimed in claim 2, it is characterized in that: described the first intercell connector is a plurality of and all in adjacent first the connecing and draw between electrode of same column, described the second intercell connector is a plurality of and all in adjacent second the connecing and draw between electrode of same column, described the first intercell connector and the second intercell connector include upper surface and the lower surface being oppositely arranged, described first connects and draws electrode and second and connect and draw electrode and include upper surface and the lower surface being oppositely arranged, the upper surface of described the first intercell connector and first connects that to draw the upper surface of electrode concordant, the lower surface of described the first intercell connector and first connects that to draw the lower surface of electrode concordant, the upper surface of described the second intercell connector and second connects that to draw the upper surface of electrode concordant, the lower surface of described the second intercell connector and second connects that to draw the lower surface of electrode concordant.
4. the manufacture method of package structure for LED as claimed in claim 1, it is characterized in that: described the first electrode and the second electrode include upper surface and the lower surface being oppositely arranged, the lower surface of described the first electrode protrudes and extends to form the first thickened part downwards, the lower surface of the second electrode protrudes and extends to form the second thickened part downwards, described the first thickened part and the second thickened part respectively with storage tank over against setting, after reflector moulding, away from the bottom surface of the first electrode and the second thickened part, the bottom surface away from the second electrode all exposes to outside reflector the first thickened part.
5. the manufacture method of package structure for LED as claimed in claim 4, it is characterized in that: also comprise and form upper surface and lower surface and the upper surface of the second electrode and the perforation of lower surface that runs through the first electrode, described perforation is reflected cup and fills after reflector moulding.
6. the manufacture method of package structure for LED as claimed in claim 1, it is characterized in that: described the first electrode comprises the first body of a lengthwise and the first connecting portion being extended outward away from the end of the second electrode by this first body, described first connects and draws electrode and extended by the first connecting portion of this first electrode, described the second electrode comprises the second body of a lengthwise and the second linkage section being extended outward away from the end of the first electrode by the second body, and described second connects and draw electrode and extended by the second linkage section of this second electrode.
7. the manufacture method of package structure for LED as claimed in claim 6, it is characterized in that: described the first connecting portion extends from first body one, described the second linkage section extends from the second body one, described the first connecting portion is less than the width of first body along the width on the bearing of trend of the first intercell connector, described the second linkage section is less than the width of the second body along the width on the bearing of trend of the second intercell connector.
8. the manufacture method of package structure for LED as claimed in claim 7, it is characterized in that: described the first connecting portion connects and draws electrode and first reduce gradually until remain unchanged after preset width towards first from first body along the width on the bearing of trend of the first intercell connector, described the second linkage section connects and draws electrode and first reduce gradually until remain unchanged after preset width towards second from the second body along the width on the bearing of trend of the second intercell connector.
9. the manufacture method of package structure for LED as claimed in claim 1, it is characterized in that: after removing the first intercell connector and the second intercell connector, be also included in first and connect the outer surface, second that draws electrode and connect the outer surface, the first electrode that draw electrode and be not reflected surface that cup covers and second electrode and be not reflected the step that forms a metal level on the surface that cup covers.
10. the manufacture method of package structure for LED as claimed in claim 9, is characterized in that: described metal level is for silver and by the mode of electroplating, be covered in first and connect and draw electrode, second and connect and draw electrode, the first electrode and be not reflected surface that cup covers and second electrode and be not reflected on the surface that cup covers.
11. 1 kinds of package structure for LED, is characterized in that: the manufacture method of described package structure for LED package structure for LED described in any one in claim 1-10 is made.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310121676.1A CN104103748B (en) | 2013-04-10 | 2013-04-10 | Package structure for LED and manufacture method thereof |
| TW102113759A TW201448286A (en) | 2013-04-10 | 2013-04-18 | Light emitting diode package and method for manufacturing the same |
| US14/221,219 US20140308767A1 (en) | 2013-04-10 | 2014-03-20 | Method for manufacturing light emitting diode packages |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310121676.1A CN104103748B (en) | 2013-04-10 | 2013-04-10 | Package structure for LED and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104103748A true CN104103748A (en) | 2014-10-15 |
| CN104103748B CN104103748B (en) | 2016-12-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310121676.1A Expired - Fee Related CN104103748B (en) | 2013-04-10 | 2013-04-10 | Package structure for LED and manufacture method thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20140308767A1 (en) |
| CN (1) | CN104103748B (en) |
| TW (1) | TW201448286A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI552386B (en) * | 2013-12-20 | 2016-10-01 | 新世紀光電股份有限公司 | Semiconductor light emitting structure and semiconductor package structure |
| US10892211B2 (en) * | 2017-08-09 | 2021-01-12 | Semtech Corporation | Side-solderable leadless package |
| JP7421056B2 (en) | 2018-09-27 | 2024-01-24 | 日亜化学工業株式会社 | Light-emitting device and method for manufacturing the light-emitting device |
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| US20090261374A1 (en) * | 2007-03-12 | 2009-10-22 | Nichia Corporation | High output power light emitting device and packaged used therefor |
| CN101567323A (en) * | 2009-05-27 | 2009-10-28 | 深圳市蓝科电子有限公司 | Method for producing three-color light-emitting diode for display screen |
| US20100155771A1 (en) * | 2006-05-10 | 2010-06-24 | Nichia Corporation | Light emitting device |
| CN104022214A (en) * | 2013-03-01 | 2014-09-03 | 展晶科技(深圳)有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
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| US6936855B1 (en) * | 2002-01-16 | 2005-08-30 | Shane Harrah | Bendable high flux LED array |
| KR101543333B1 (en) * | 2010-04-23 | 2015-08-11 | 삼성전자주식회사 | Lead frame for light emitting device package, light emitting device package, and illumination apparatus employing the light emitting device package |
| KR101662038B1 (en) * | 2010-05-07 | 2016-10-05 | 삼성전자 주식회사 | chip package |
| US8933548B2 (en) * | 2010-11-02 | 2015-01-13 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
| US8987022B2 (en) * | 2011-01-17 | 2015-03-24 | Samsung Electronics Co., Ltd. | Light-emitting device package and method of manufacturing the same |
| KR101766299B1 (en) * | 2011-01-20 | 2017-08-08 | 삼성전자 주식회사 | Light emitting device package and method of manufacturing the light emitting device package |
| JP6078948B2 (en) * | 2012-01-20 | 2017-02-15 | 日亜化学工業株式会社 | Package molded body for light emitting device and light emitting device using the same |
| JP2013179271A (en) * | 2012-01-31 | 2013-09-09 | Rohm Co Ltd | Light emitting device and manufacturing method of the same |
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2013
- 2013-04-10 CN CN201310121676.1A patent/CN104103748B/en not_active Expired - Fee Related
- 2013-04-18 TW TW102113759A patent/TW201448286A/en unknown
-
2014
- 2014-03-20 US US14/221,219 patent/US20140308767A1/en not_active Abandoned
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100155771A1 (en) * | 2006-05-10 | 2010-06-24 | Nichia Corporation | Light emitting device |
| US20090261374A1 (en) * | 2007-03-12 | 2009-10-22 | Nichia Corporation | High output power light emitting device and packaged used therefor |
| CN101567323A (en) * | 2009-05-27 | 2009-10-28 | 深圳市蓝科电子有限公司 | Method for producing three-color light-emitting diode for display screen |
| CN104022214A (en) * | 2013-03-01 | 2014-09-03 | 展晶科技(深圳)有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201448286A (en) | 2014-12-16 |
| CN104103748B (en) | 2016-12-07 |
| US20140308767A1 (en) | 2014-10-16 |
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