CN103887417A - Manufacturing method of light-emitting diodes and light-emitting diodes manufactured through use of method - Google Patents
Manufacturing method of light-emitting diodes and light-emitting diodes manufactured through use of method Download PDFInfo
- Publication number
- CN103887417A CN103887417A CN201210561830.2A CN201210561830A CN103887417A CN 103887417 A CN103887417 A CN 103887417A CN 201210561830 A CN201210561830 A CN 201210561830A CN 103887417 A CN103887417 A CN 103887417A
- Authority
- CN
- China
- Prior art keywords
- electrode
- reflector
- led
- package structure
- intercell connector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
Disclosed is a manufacturing method for light-emitting-diode package structures. The method includes: providing a lead frame in which a plurality of columns of first electrodes and second electrodes are installed, wherein the first electrodes and the second electrodes are arrayed alternatively on the lead frame and first electrodes in the same column and second electrodes in the same column are serially connected in a longitudinal direction through different connection strips; forming reflection cups with accommodating grooves between every two adjacent connection strips; cutting connection strips at the two sides of the reflection cups and forming a plurality of connection segments, the widths of which are smaller than the widths of electrodes connected with the connection segments; arranging light-emitting-diode chips in the accommodating grooves and electrically connecting the light-emitting-diode chips with the first and second electrodes; forming package layers, which cover the light-emitting-diode chips, in the accommodating grooves; and cutting the reflection cups and forming a plurality of package structures. The invention also provides the light-emitting-diode package structures manufactured through the manufacturing method. Compared with the prior art, the method cuts the connection strips exposed at the two sides of the reflection cups after the reflection cups are formed so as to form the plurality of connection segments and thus the adaptation of the light-emitting-diode package structures is improved effectively.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements, the light-emitting diode that particularly a kind of manufacture method of package structure for LED and use the method are made.
Background technology
Light-emitting diode (light emitting diode, LED), as a kind of light emitting source efficiently, has the various features such as environmental protection, power saving, life-span length and is applied to widely various fields.
Before being applied in specific field, light-emitting diode also needs to encapsulate, and to protect light-emitting diode chip for backlight unit, thereby obtains higher luminous efficiency and longer useful life.
The common first moulding reflector of general package structure for LED is attached at electrode bending on the bottom surface and side of reflector after reflector moulding again.But the adaptation of the package structure for LED that this method is made is not good, between the electrode in encapsulating structure and reflector, in conjunction with not tight, electrode in use easily becomes flexible or comes off.
Summary of the invention
In view of this, be necessary to provide a kind of manufacture method of effective lifting package structure for LED adaptation and the light-emitting diode that uses the method to make.
A kind of manufacture method of package structure for LED, comprise the following steps: the lead frame that is equiped with multiple row the first electrode and the second electrode is provided, described the first electrode, the second electrode are staggered on lead frame, each the first electrode in same row is longitudinally connected in series by an intercell connector that is positioned at its end, and each the second electrode in same row is longitudinally connected in series by another intercell connector that is positioned at its end; On lead frame, between the adjacent intercell connector of two row, form the reflector arranging around the first electrode, the second electrode, described reflector has the storage tank that holds light-emitting diode chip for backlight unit; Cutting exposes to the intercell connector of the relative both sides of reflector, makes intercell connector be separated into some relatively independent linkage sections, corresponding the first electrode/the second electrode setting of each linkage section, and the width of this linkage section is less than the width of connected the first electrode/the second electrode; Light-emitting diode chip for backlight unit is set in storage tank and is electrically connected described the first electrode, the second electrode; In storage tank, form the encapsulated layer of covering luminousing diode chip; And transverse cuts reflector is to form multiple independently package structure for LED.
A kind of package structure for LED, comprise a pair of spaced the first electrode and the second electrode, the light-emitting diode chip for backlight unit being electrically connected with the first electrode and the second electrode respectively and the reflector arranging around light-emitting diode chip for backlight unit, reflector has the storage tank that holds light-emitting diode chip for backlight unit, described package structure for LED also comprises the linkage section extending away from the outside then downward one in one end of the first electrode away from one end linkage section that outwards one is extended then and second electrode of the second electrode from described the first electrode downwards, the width of the linkage section on described the first electrode is less than the width of the first electrode, the width of the linkage section on described the second electrode is less than the width of the second electrode, described the first electrode and the second electrode are embedded in reflector, the linkage section of the linkage section of described the first electrode and the second electrode exposes to respectively the relative both sides of reflector.
Compared with prior art, this method is to cut to form multiple linkage sections to exposing its both sides intercell connector again after reflector moulding, and the first electrode, the second electrode be embedded in reflector, and this can effectively promote the adaptation of package structure for LED.
With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments.
Brief description of the drawings
Fig. 1 is the manufacture method flow chart of the package structure for LED of one embodiment of the invention.
Fig. 2 is the schematic top plan view of the lead frame of the manufacture method step S101 gained of package structure for LED shown in Fig. 1.
Fig. 3 is the schematic top plan view of the first electrode, the second electrode in lead frame shown in Fig. 2.
Fig. 4 is the first electrode shown in Fig. 3 and the second electrode generalized section along IV-IV line.
Fig. 5 is the elevational schematic view of the first electrode shown in Fig. 3 and the second electrode.
Fig. 6 is that in Fig. 1, lead frame is positioned over the generalized section in mould.
Fig. 7 is that in Fig. 1, lead frame is positioned over the elevational schematic view (bottom of bed die is hidden) in mould.
Fig. 8 forms the schematic top plan view after reflector on the lead frame of manufacture method step S102 gained of package structure for LED shown in Fig. 1.
Fig. 9 is the schematic top plan view that forms the first electrode and the second electrode after reflector shown in Fig. 8 on lead frame.
Figure 10 is the first electrode shown in Fig. 9 and the second electrode generalized section along X-X line.
Figure 11 is the elevational schematic view of the first electrode shown in Fig. 9 and the second electrode.
Figure 12 is that the cutting intercell connector of the manufacture method step S103 gained of package structure for LED shown in Fig. 1 forms the first electrode after linkage section, the schematic top plan view of the second electrode.
Figure 13 is the first electrode shown in Figure 12 and the second electrode generalized section along XIII-XIII line.
Figure 14 is the elevational schematic view of the first electrode shown in Figure 12 and the second electrode.
Figure 15 is the generalized section of the individual light-emitting diodes encapsulating structure of the manufacture method step S106 gained of package structure for LED shown in Fig. 1.
Figure 16 is the schematic top plan view that forms the first electrode and the second electrode after reflector in another embodiment of manufacture method step S102 of package structure for LED shown in Fig. 1 on lead frame.
Figure 17 be in Figure 16 the first electrode and the second electrode along the generalized section of XVII-XVII line.
Figure 18 is the elevational schematic view of the first electrode shown in Figure 16 and the second electrode.
Figure 19 be in another embodiment of manufacture method step S103 of package structure for LED shown in Fig. 1 after cutting intercell connector forms linkage section the schematic top plan view of the first electrode and the second electrode.
Figure 20 be in Figure 19 the first electrode and the second electrode along the generalized section of XX-XX line.
Figure 21 is the elevational schematic view of the first electrode shown in Figure 19 and the second electrode.
Main element symbol description
| Package structure for |
100 |
| The |
10、10a |
| |
101、201 |
| |
102、202 |
| |
103、203 |
| The first thickened |
1022、1022a |
| Groove | 105、205 |
| The |
20、20a |
| The second thickened |
2022、2022a |
| Intercell |
30、31、30a、 |
| Linkage section | |
| 301、311、301a、311a | |
| Groove | 40 |
| |
50 |
| Mould | 60 |
| Mold | 61 |
| Runner | 611 |
| Bed die | 62 |
| |
70、 |
| Storage tank | |
| 71、71a | |
| Light-emitting diode chip for |
80 |
| Wire | 81、82 |
| Encapsulated |
90 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Fig. 1 is the manufacture method flow chart of the package structure for LED 100 of one embodiment of the invention, and please refer to Fig. 1 to Figure 21, the manufacture method of this package structure for LED 100 comprises the steps:
Step S101, please refer to Fig. 2 to Fig. 5, one lead frame 50 that is equiped with multiple row the first electrode 10, the second electrode 20 is provided, described the first electrode 10, the second electrode 20 are staggered on lead frame 50, each the first electrode 10 in same row is longitudinally connected in series by the intercell connector 30 that is positioned at its one end, and each the second electrode 20 in same row is longitudinally connected in series by the intercell connector 31 that is positioned at its one end.
On this lead frame 50, be also provided with the good some metal fines of ductility (do not indicate), this metal fine is for being individually fixed in described the first electrode 10 and the second electrode 20 on lead frame 50 and providing necessary support force for this first electrode 10 and the second electrode 20.
This first electrode 10 comprises the upper surface 101 and the lower surface 102 that are oppositely arranged.On this first electrode 10, offer at least one guide hole 103 that runs through its upper surface 101 and lower surface 102.This second electrode 20 comprises the upper surface 201 and the lower surface 202 that are oppositely arranged.On this second electrode 20, offer at least one guide hole 203 that runs through its upper surface 201 and lower surface 202.
Each the first electrode 10 in same row is positioned at the same side of this intercell connector 30, and each the second electrode 20 in same row is positioned at the same side of this intercell connector 31.The thickness (edge is perpendicular to the thickness in the upper and lower surface direction of the first electrode 10 and the second electrode 20) of this intercell connector 30,31 is greater than the thickness of the first electrode 10, the second electrode 20.This intercell connector 30,31 includes the upper and lower surface (not indicating) being oppositely arranged.The upper surface of this intercell connector 30 is concordant with the upper surface 101 of each the first electrode 10 in same row, and the upper surface of this intercell connector 31 is concordant with the upper surface 201 of each the second electrode 20 in same row.The lower surface of this intercell connector 30 arranges away from the lower surface 102 of each the first electrode 10 in same row, and the lower surface of this intercell connector 31 arranges away from the lower surface 202 of each the second electrode 20 in same row.
The lower surface 102 of this first electrode 10, the lower surface 202 of the second electrode 20 also further protrude and extend to form the first thickened section 1022, the second thickened section 2022 downwards respectively.This first thickened section 1022 is extended with the second relative two ends, electrode 20 inner sides from the first electrode 10 respectively vertically downward with the second thickened section 2022.The width (along the width on the bearing of trend of intercell connector 30,31, i.e. longitudinal width) of this first thickened section 1022, the second thickened section 2022 is less than respectively the first electrode 10 of its correspondence, the width of the second electrode 20.
The bottom surface away from corresponding the first electrode 10 (not indicating) of this first thickened section 1022 is concordant with the lower surface of this intercell connector 30.The bottom surface away from corresponding the second electrode 20 (not indicating) of this second thickened section 2022 is concordant with the lower surface of this intercell connector 31.
Between the first adjacent electrode 10 and the second electrode 20, form a groove 40 and block this first electrode 10 and the second electrode 20 in order to insulating properties.The first thickened section 1022 and the intercell connector 30 of this first electrode 10 jointly enclose and form a groove 105, and the second thickened section 2022 and the intercell connector 31 of this second electrode 20 jointly enclose and form a groove 205.The top of this groove 105,205 is communicated with guide hole 103,203 respectively.This groove 40 is communicated with groove 105,205 horizontal (along the bearing of trend of the first electrode 10, the second electrode 20) respectively.
Step S102, sees also Fig. 8 to Figure 11, on lead frame 50, between the adjacent intercell connector 30,31 of two row, forms the reflector 70 arranging around the first electrode 10, the second electrode 20.This reflector 70 has the storage tank 71 that holds light-emitting diode chip for backlight unit 80.
This storage tank 71 is formed on the upper surface 101 of this first electrode 10 and the upper surface 201 of the second electrode 20 and upwards runs through this reflector 70.A part for a part for the upper surface 101 of this first electrode 10 and these the second electrode 20 upper surfaces 201 exposes to the bottom of this storage tank 71.Described the first thickened section 1022 and the second thickened section 2022 and this storage tank 71 lay respectively at the relative both sides of this first electrode 10 and the second electrode 20, and this first thickened section 1022 and the second thickened section 2022 with this storage tank 71 just to arranging.
After these reflector 70 moulding, this first thickened section 1022 exposes to respectively the bottom of reflector 70 away from the bottom surface of the first electrode 10, the bottom surface away from the second electrode 20 of the second thickened section 2022.
Please also refer to Fig. 6 to Fig. 7, this reflector 70 takes shape among a mould 60 in the present invention, and this mould 60 comprises the mold 61 and the bed die 62 that are oppositely arranged.This mold 61 and bed die 62 surround a confined space of accommodating this lead frame 50 jointly.The upper and lower surface of this intercell connector 30,31 is all hidden by mold 61 and bed die 62.
The material of this reflector 70 is epoxy resin, silicones, PPA(polyphtalamide resin) etc. any in macromolecular compound, and one-body molded by the mode of injection moulding.
This macromolecular compound becomes the fluid of melting after high-temperature heating.This fluid flows in mould and flows (please refer to Fig. 7) along the first thickened section 1022, the second thickened section 2022, guide hole 103, guide hole 203 through runner 611, and this fluid is connected that bar 30,31 stops and flows to form default reflector 70 shapes between the adjacent intercell connector 30,31 of two row simultaneously.
Step S103, please refer to Figure 12 to Figure 14, cutting exposes to the intercell connector 30,31 of reflector 70 relative both sides, make intercell connector 30 be separated into some relatively independent linkage sections 301, corresponding the first electrode 10 of each linkage section 301 arranges, the width (along the width on the bearing of trend of intercell connector 30,31, i.e. longitudinal width) of this linkage section 301 is less than the width of connected the first electrode 10; Intercell connector 31 is separated into some relatively independent linkage sections 311, corresponding the second electrode 20 of each linkage section 311 arranges, the width (along the width on the bearing of trend of intercell connector 30,31, i.e. longitudinal width) of this linkage section 311 is less than the width of connected the second electrode 20.
Utilize in the present embodiment cutting knife to cut this intercell connector 30,31 to be divided into some relatively independent linkage sections 301,311 to intercell connector 30,31.Can also utilize in other embodiments the mode of laser engraving to cut intercell connector 30,31.
In addition, in the present invention after cutting intercell connector 30,31 steps, also can expose to storage tank 71 bottom the first electrode 10 and the second electrode 20 and expose on the surface of linkage section 301,302 of reflector 70 both sides and make first electrode 10, second electrode 20 and linkage section 301,311 oxidations of a metal level to prevent from exposing.Preferably, the material system silver of this metal level, and be formed on the surface of the first electrode 10, the second electrode 20 and the linkage section 301,302 that expose by the mode of electroplating.
Step S104, arranges light-emitting diode chip for backlight unit 80 and is electrically connected described the first electrode 10, the second electrode 20 storage tank 71 is interior.
Light-emitting diode chip for backlight unit 80 is set and is connected to respectively the first electrode 10 and the second electrode 20 by wire 81,82 this storage tank 71 is interior.In the present embodiment, this light-emitting diode chip for backlight unit 80 is positioned at the bottom of storage tank 71.Particularly, this light-emitting diode chip for backlight unit 80 is arranged on the upper surface 101 of the first electrode 10 and is electrically connected with the first electrode 10 and the second electrode 20 respectively by wire 81,82.Understandably, in other embodiments, this light-emitting diode chip for backlight unit 80 can also directly be electrically connected with the first electrode 10 and the second electrode 20 by the mode of covering crystalline substance (Flip-Chip).
Step S105, at the encapsulated layer 90 of the interior formation covering luminousing diode chip 80 of storage tank 71.This encapsulated layer 90 can be the one in silica gel, epoxy resin or other macromolecule materials.Preferably, this encapsulated layer 90 also includes fluorescent material or optics spread powder, for the light of changing or this light-emitting diode chip for backlight unit 80 of diffusion sends.
Step S106, please refer to Figure 15, and transverse cuts reflector 70 is to form multiple independently package structure for LED 100.The first electrode 10 of this package structure for LED 100, the second electrode 20 are embedded in reflector 70, and this linkage section 301,311 exposes to respectively the relative both sides of reflector 70.
Understandably, in step S102 when moulding reflector 70a, the upper surface portion of this intercell connector 30a, 31a is hidden some upper surface simultaneously by mold 61 and is exposed in the space that mold 61 and bed die 62 enclose.Please also refer to Figure 16 to Figure 18, when after reflector 70a moulding, the part that this intercell connector 30a, 31a are not hidden by mold 61 is reflected a glass 70a and covers.Please refer to Figure 19 to Figure 21, cut intercell connector 30a, 31a in following step S03 time, cutting knife cuts intercell connector 30a, 31a along the end edge of reflector 70a, it is cut that this intercell connector 30a, 31a upper surface are reflected glass part of 70a covering, and after cutting, this intercell connector 30a, 31a are divided into some relatively independent linkage section 301a, 311a.The width of each linkage section 301a, 311a is less than the first electrode 10a of connection corresponding to it or the width of the second electrode 20a.The part that the lower surface of each linkage section 301a, 311a exposes outside reflector 70a bottom is " protruding " font (please refer to Figure 21).
In the present invention, both having can be used as LED of side view type encapsulating structure by the package structure for LED 100 of the manufacture method gained of package structure for LED also can be used as top emission type package structure for LED and uses.In the time that this package structure for LED 100 uses and be installed in circuit board (not shown) as LED of side view type encapsulating structure, this package structure for LED 100 is connected with external circuit with linkage section 311,311a by linkage section 301,301a; In the time that package structure for LED 100 uses as top emission type package structure for LED, this package structure for LED 100 is electrically connected with external circuit structure by the bottom surface of its first thickened section 1022 and the second thickened section 2022.
In the present invention, this reflector 70 is that mode by injection moulding is one-body molded and arrange around the first electrode 10 and the second electrode 20.Compared with prior art, this method intercell connector 30, intercell connector 31 in the time of moulding reflector 70 are hidden by mold 61, after reflector 70 moulding, cut respectively to form some relatively independent linkage sections 301,311 to being positioned at the intercell connector 30,31 of its both sides again, and the first electrode 10, the second electrode 20 are embedded in reflector 70, this can effectively promote the adaptation of package structure for LED 100, this manufacture method is applicable to batch making package structure for LED 100 simultaneously, can effectively enhance productivity.
Secondly, this first thickened section 1022, the second thickened section 2022 can increase the bond strength of this reflector 70 and the first electrode 10, the second electrode 20, these guide hole 103,203 interior trips have the macromolecular compound that forms reflector 70, also can increase the bond strength of this reflector 70 and the first electrode 10, the second electrode 20.
In addition, in the present invention when moulding reflector 70, the bottom surface of this first thickened section 1022 and the second thickened section 2022 exposes to respectively the bottom of reflector 70, the heat producing when light-emitting diode chip for backlight unit 80 is worked can be dispersed among air by the bottom surface of the bottom surface of the first thickened section 1022 and the second thickened section 2022, thereby effectively promotes the radiating efficiency of this package structure for LED 100.
Will also be appreciated that for the person of ordinary skill of the art, can make other various corresponding changes and distortion by technical conceive according to the present invention, and all these change the protection range that all should belong to the claims in the present invention with distortion.
Claims (11)
1. a manufacture method for package structure for LED, comprises the following steps:
The lead frame that is equiped with multiple row the first electrode and the second electrode is provided, described the first electrode, the second electrode are staggered on lead frame, each the first electrode in same row is longitudinally connected in series by an intercell connector that is positioned at its end, and each the second electrode in same row is longitudinally connected in series by another intercell connector that is positioned at its end;
On lead frame, between the adjacent intercell connector of two row, form the reflector arranging around the first electrode, the second electrode, described reflector has the storage tank that holds light-emitting diode chip for backlight unit;
Cutting exposes to the intercell connector of the relative both sides of reflector, makes intercell connector be separated into some relatively independent linkage sections, corresponding the first electrode/the second electrode setting of each linkage section, and the width of this linkage section is less than the width of connected the first electrode/the second electrode;
Light-emitting diode chip for backlight unit is set in storage tank and is electrically connected described the first electrode, the second electrode;
In storage tank, form the encapsulated layer of covering luminousing diode chip; And
Transverse cuts reflector is to form multiple independently package structure for LED.
2. the manufacture method of package structure for LED as claimed in claim 1, it is characterized in that: between described the first adjacent electrode and the second electrode, form groove and block this first electrode and the second electrode with insulating properties, described the first electrode and the intercell connector of answering with the first electrode pair, described the second electrode and surround respectively a groove with the intercell connector that the second electrode pair is answered, the groove between described the first electrode, the second electrode respectively with described groove cross connection.
3. the manufacture method of package structure for LED as claimed in claim 1, it is characterized in that: before light-emitting diode chip for backlight unit is set, described manufacture method also comprises the first electrode and the second electrode to exposing to storage tank bottom and exposes to the step of making a metal level on the surface of linkage section of reflector both sides, with the first electrode, the second electrode and the linkage section oxidation that prevent from exposing.
4. the manufacture method of package structure for LED as claimed in claim 3, is characterized in that: the material of described metal level is silver, and described metal level is formed at the outer surface of the first electrode, the second electrode and the linkage section that expose by the mode of electroplating.
5. the manufacture method of the package structure for LED as described in any one in claim 1-4 item, it is characterized in that: described the first electrode and the second electrode include the upper surface and the lower surface that are oppositely arranged, the lower surface of the lower surface of described the first electrode and the second electrode protrudes and extends to form thickened section downwards respectively, thickened section after reflector moulding on described the first electrode exposes to outside reflector away from the outer surface of the first electrode, and the thickened section on described the second electrode exposes to outside reflector away from the outer surface of the second electrode.
6. the manufacture method of package structure for LED as claimed in claim 5, it is characterized in that: the upper surface of the upper surface of the first electrode and the second electrode is exposed in the storage tank of described reflector, the thickened section of described the first electrode is formed on the lower surface of the first electrode, and the thickened section of the second electrode is formed on the lower surface of the second electrode.
7. the manufacture method of package structure for LED as claimed in claim 5, is characterized in that: on described the first electrode, offer at least one guide hole that runs through the first electrode upper and lower surface, offer at least one guide hole that runs through the second electrode upper and lower surface on the second electrode.
8. the manufacture method of package structure for LED as claimed in claim 5, is characterized in that: the material of described reflector is macromolecular compound, and is made into integration by injection molding.
9. the manufacture method of package structure for LED as claimed in claim 8, it is characterized in that: described reflector takes shape among a mould, this mould comprises the mold and the bed die that are oppositely arranged, this mold and bed die surround the confined space of accommodating lead frame jointly, described macromolecular compound becomes the fluid of melting after heating, and this fluid is injected between the adjacent intercell connector of the row of two on mould lead frame and along the thickened section of the first electrode and the second electrode and flows to form described reflector.
10. the manufacture method of package structure for LED as claimed in claim 9, it is characterized in that: described intercell connector comprises the upper surface and the lower surface that are oppositely arranged, the lower surface of described intercell connector is hidden by bed die, the upper surface portion of described intercell connector is hidden by mold, and the part that described intercell connector upper surface is not hidden by mold after reflector moulding is reflected cup and covers.
11. 1 kinds of package structure for LED, comprise a pair of spaced the first electrode and the second electrode, the light-emitting diode chip for backlight unit being electrically connected with the first electrode and the second electrode respectively and the reflector arranging around light-emitting diode chip for backlight unit, reflector has the storage tank that holds light-emitting diode chip for backlight unit, it is characterized in that: described package structure for LED also comprises the linkage section extending away from the outside then downward one in one end of the first electrode away from one end linkage section that outwards one is extended then and second electrode of the second electrode from described the first electrode downwards, the width of the linkage section on described the first electrode is less than the width of the first electrode, the width of the linkage section on described the second electrode is less than the width of the second electrode, described the first electrode and the second electrode are embedded in reflector, the linkage section of the linkage section of described the first electrode and the second electrode exposes to respectively the relative both sides of reflector.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210561830.2A CN103887417A (en) | 2012-12-22 | 2012-12-22 | Manufacturing method of light-emitting diodes and light-emitting diodes manufactured through use of method |
| TW101149999A TW201427110A (en) | 2012-12-22 | 2012-12-26 | LED package and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210561830.2A CN103887417A (en) | 2012-12-22 | 2012-12-22 | Manufacturing method of light-emitting diodes and light-emitting diodes manufactured through use of method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103887417A true CN103887417A (en) | 2014-06-25 |
Family
ID=50956231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210561830.2A Pending CN103887417A (en) | 2012-12-22 | 2012-12-22 | Manufacturing method of light-emitting diodes and light-emitting diodes manufactured through use of method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103887417A (en) |
| TW (1) | TW201427110A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972094A (en) * | 2017-04-14 | 2017-07-21 | 欧文 | A kind of integral LED band light source support and preparation method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102122696A (en) * | 2009-12-01 | 2011-07-13 | Lg伊诺特有限公司 | Light emitting device and method of manufacturing the same |
-
2012
- 2012-12-22 CN CN201210561830.2A patent/CN103887417A/en active Pending
- 2012-12-26 TW TW101149999A patent/TW201427110A/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102122696A (en) * | 2009-12-01 | 2011-07-13 | Lg伊诺特有限公司 | Light emitting device and method of manufacturing the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972094A (en) * | 2017-04-14 | 2017-07-21 | 欧文 | A kind of integral LED band light source support and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201427110A (en) | 2014-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6770498B2 (en) | LED package and the process making the same | |
| CN100364114C (en) | Surface mountable optocoupler package | |
| US8896015B2 (en) | LED package and method of making the same | |
| CN104022215B (en) | Light emitting diode packaging structure and manufacturing method thereof | |
| US20120122256A1 (en) | Method for manufacturing light emitting diode | |
| CN102691921A (en) | Light-emitting diode light bar and method for manufacturing same | |
| CN103531669B (en) | The manufacture method of package structure for LED | |
| US20090230421A1 (en) | Semiconductor package structure, lead frame and conductive assembly for the same | |
| EP2228842B1 (en) | Light emitting device package | |
| CN103972371B (en) | LED package structure and manufacturing method thereof | |
| KR100628987B1 (en) | Package structure of light emitting diode and method of manufacturing thereof | |
| CN104103748A (en) | Light-emitting-diode packaging structure and manufacturing method thereof | |
| US8791493B2 (en) | Light emitting diode package and method for manufacturing the same | |
| CN103887417A (en) | Manufacturing method of light-emitting diodes and light-emitting diodes manufactured through use of method | |
| CN103682028A (en) | Light emitting diode package structure and manufacture method thereof | |
| CN104022214A (en) | Light emitting diode packaging structure and manufacturing method thereof | |
| CN103682063B (en) | LED of side view type encapsulating structure and its manufacture method | |
| US10964637B2 (en) | Package and light emitting device | |
| CN103887399A (en) | Manufacturing method of light-emitting diodes and light-emitting diodes manufactured through use of method | |
| GB2413698A (en) | LED package | |
| CN103887400A (en) | Light-emitting-diode package structure | |
| JP6147976B2 (en) | LIGHT EMITTING DEVICE AND LIGHT EMITTING UNIT MANUFACTURING METHOD | |
| KR100628884B1 (en) | White Light Emitting and its method of making | |
| KR101078833B1 (en) | Light emitting diode unit | |
| CN201196385Y (en) | Surface labeling LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140625 |