CN107342759A - A kind of digital intelligent IGBT driving methods and its system - Google Patents
A kind of digital intelligent IGBT driving methods and its system Download PDFInfo
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- CN107342759A CN107342759A CN201710035772.2A CN201710035772A CN107342759A CN 107342759 A CN107342759 A CN 107342759A CN 201710035772 A CN201710035772 A CN 201710035772A CN 107342759 A CN107342759 A CN 107342759A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Abstract
The invention discloses a kind of digital intelligent IGBT driving methods and its system, wherein driving method includes step S1：After upper electricity, di/dt data and dv/dt data are detected；S2：Judge whether di/dt data and dv/dt data are consistent with preset value within n-th of minor time slice；S3：The array pattern of variable gate resistance is adjusted；S4：Di/dt data and dv/dt data are detected, perform step S2 and step S3 again, circulates m times, is consistent to di/dt data and dv/dt data with preset value；S5：It is switched on or off according to the array pattern of the variable gate resistance of each minor time slice of memory storage in m circulation, until power-off；Working method of the present invention without selecting IGBT modules in advance, need not also be strict with used in IGBT modules be same producer even same batch, it is ensured that each IGBT modules turn on and off the time and fixed.
Description
Technical field
The invention belongs to field of power electronics, more particularly to a kind of digital intelligent IGBT (Insulated Gate
Bipolar Transistor, insulated gate bipolar transistor) driving method and its system.
Background technology
Power electronic system is made up of main circuit and control circuit.Main circuit is made up of switching devices such as IGBT, high-power
The environment of IGBT operations is typically all relatively more severe, and its voltage born may be up to more than kilovolt, once break down and do not obtain
Timely processing, very serious consequence, or even security incident can be caused.Drive circuit is connecing between main circuit and control circuit
Mouthful, the quality of its performance directly affects the service behaviour of whole system.Therefore, a good drive circuit, can not only make IGBT
Ideal on off state is operated in, and the safe operation to whole system is most important.
Traditional IGBT drivings are made up of discrete component, pure analog device, and the defencive function that can be realized is limited, and i.e.
Making to break down, drive circuit is also to report failure by sending the pulse of low and high level or one fixed width to control circuit,
And the functional closing of system institute without being recorded to fault message, therefore can not be entered failure cause with protecting IGBT
Row analysis, targetedly to solve failure problems.In addition, driven for traditional IGBT, it is only applicable to per a driver pair
The IGBT of model is answered, it is compatible poor.
In the last few years, with the development of Power Electronic Technique, there are digital IGBT drivings, it not only solves above-mentioned
Problem, additionally it is possible to control IGBT break-make, reduce switching delay and Miller plateau time, reduce switching loss.It is but existing at present
Digital driving still suffer from following deficiency：
(1) be only used as logical process, for the IGBT modules of different series, different model, can not all setting when
In, turned on and off with the dv/dt and di/dt that are consistent with preset value, so its intelligence declared can not be fully achieved
Change.
(2) series connection for IGBT modules and application in parallel, are still targetedly separately to discuss, though or it is placed on one
Rise, but still need to select single tube, serial or parallel connection mode to realize corresponding connection in series-parallel application in advance, and require using same
Producer, with a batch of IGBT modules, this connection in series-parallel application undoubtedly to IGBT modules has limited.
The disclosure of background above technology contents is only used for inventive concept and the technical scheme that auxiliary understands the present invention, and it is not
The prior art of present patent application is necessarily belonged to, shows the applying date of the above in present patent application in no tangible proof
In the case of disclosed, above-mentioned background technology should not be taken to evaluate the novelty and creativeness of the application.
The content of the invention
In order to solve the above problems, the present invention proposes a kind of digital intelligent IGBT driving methods and its system, wherein,
The present invention proposes a kind of digital intelligent IGBT driving methods, for controlling IGBT modules between upper electricity and power-off with one
Regular time is switched on or off, and comprises the following steps：
S1：After upper electricity, the di/dt data and dv/dt numbers for being switched on or off n-th of minor time slice in the period are detected
According to；
S2：According to the di/dt data of acquisition and the dv/dt data, judge within n-th of minor time slice described in
Whether di/dt data and the dv/dt data are consistent with preset value；
S3：The array pattern of variable gate resistance is adjusted within n-th of minor time slice according to judged result, accordingly
The length for being switched on or off the time of IGBT modules is controlled, and array pattern corresponding to the variable gate resistance of time period is entered
Row memory storage；
S4：The di/dt data and dv/dt data of (n+1)th minor time slice are detected, perform step S2 and step S3 again,
Circulated m times with this, until the di/dt data and the dv/dt data are consistent with preset value；
S5：It is switched on or off subsequently in the period, memory storage is each in being circulated according to m times of step S1 to step S4
The array pattern of the variable gate resistance of minor time slice is switched on or off, until power-off；
Di/dt is current changing rate；Dv/dt is voltage change ratio；N=1,2,3 ..., n；M=1,2,3 ..., m.
Preferably, the present invention can also have following technical characteristic：
It is further comprising the steps of：
1) electric circuit inspection collection emitter voltage VCE is detected by VCE；
2) according to the different VCE threshold voltage values preset, by the collection emitter voltage VCE got and different institutes
State VCE threshold voltage values to be compared, obtain threshold voltage window residing for the collection emitter voltage VCE；
3) comparison result is carried out in the form of data signal according to residing threshold voltage window analyzing the IGBT moulds
The short-circuit condition of group.
It is further comprising the steps of：The VCE threshold voltage values include the first VCE threshold voltage values, the 2nd VCE threshold voltages
Value, the 3rd VCE threshold voltage values and the 4th VCE threshold voltage values, the first VCE threshold voltage values<The 2nd VCE threshold values
Magnitude of voltage<The 3rd VCE threshold voltage values<The 4th VCE threshold voltage values；As the collection emitter voltage VCE<First
During VCE threshold voltage values, judge that IGBT modules are in normal condition；When the first VCE threshold voltage values<Collect emitter voltage VCE<The
During two VCE threshold voltage values, judge that the short circuit of two classes occurs for IGBT modules；When the 2nd VCE threshold voltage values<Collect emitter voltage VCE<
3rd VCE threshold voltage values, the 3rd VCE threshold voltage values<Collect emitter voltage VCE<4th VCE threshold voltage values or collection emitter-base bandgap grading electricity
Press VCE>During the 4th VCE threshold voltage values, judge that a kind of short circuit occurs for IGBT modules, and the collection emitter voltage VCE more it is big then
Illustrate that a kind of short circuit is more serious.
Whole opening process is divided into n period：ton0~ton1、ton1~ton2、┅、tonn-1~tonn, it is corresponding to open data
Preset value dv/dtonAnd di/dtonRespectively one group 1*n matrix, i.e.,：{dv/dton1, dv/dton2, ┅, dv/dtonnAnd
{di/dton1, di/dton2, ┅, di/dtonn, open data dv/dt corresponding n-thonnAnd di/dtonn, n-th is represented respectively
Dv/dt corresponding to the individual periodonPreset value and di/dtonPreset value.
Whole turn off process is divided into n period：toff0~toff1、toff1~toff2、┅、toffn-1~toffn, corresponding shut-off
The preset value dv/dt of dataoffAnd di/dtoffRespectively one group 1*n matrix, i.e.,：{dv/dtoff1, dv/dtoff2, ┅, dv/
dtoffnAnd { di/dtoff1, di/dtoff2, ┅, di/dtoffn, corresponding n-th of shut-off data dv/dtoffnAnd di/dtoffn,
Dv/dt corresponding to n-th of period is represented respectivelyoffPreset value and di/dtoffPreset value.
To distinguish the state of IGBT modules short circuit, i.e., circuit and di/dt detection circuits are detected according to VCE：When di/dt is detected
When circuit is transmitted to digital control chip module low level, represents and short trouble occurs, while passed back further according to VCE detection circuits
Four groups of signals, to judge that IGBT modules happens is that a kind of short circuit or the short circuit of two classes, and turned off by mode corresponding to selection
IGBT。
After the power-up, first determine whether peripheral control unit is given and turn on and off data accordingly；If given, with
Peripheral control unit given data control the break-make of IGBT modules；Otherwise, the data that system is stored when being powered off with last time are come
Control the break-make of IGBT modules.
It is digital described in any of the above-described for realizing the invention also provides a kind of digital intelligent IGBT drive systems
The intelligent IGBT driving methods of formula, including the data detection circuit of detection IGBT module operating state datas, change-over circuit, numeral
Control chip, drive circuit, variable gate resistance, memory and peripheral control unit, the digital control chip are used to judge
IGBT working condition, in the drive circuit and by the variable gate resistance under the digital control chip in real time control
To drive IGBT；The data detection circuit includes dv/dt detection circuits and di/dt detection circuits, and the dv/dt detects circuit
The signal of detection supplies the digital control chip module analysis after being converted into data signal by the change-over circuit；The di/
The signal of dt detection electric circuit inspections is converted into data signal through the change-over circuit and supplies the digital control chip module analysis, together
When by the di/dt detect electric circuit inspection signal through compare processing after be directly transmitted to digital control chip module analysis；It is described
Memory is switched on or off data for storage；Peripheral control unit, for opening or closing according to memory storage after the power-up
Disconnected data, or the data control IGBT modules that are switched on or off that peripheral control unit gives carry out break-make.
Preferably, in addition to VCE detection circuits, the signal of the VCE detections electric circuit inspection turn without the change-over circuit
Change and directly supply the digital control chip module analysis, the VCE detections circuit includes four different VCE threshold values preset
The comparator of magnitude of voltage.
Preferably, in addition to undervoltage detection circuit, excess temperature detection circuit, active clamped ACL circuits and or signal designation mould
Block.
The beneficial effect that the present invention is compared with the prior art includes：When IGBT modules in parallel or when being used in series, without thing
The working method (single tube, series, parallel) of IGBT modules is first selected, is also same factory without IGBT modules used in strict demand
Family's even same batch, only need to ensure that the time that turns on and off of each IGBT modules is fixed, that is, ensure turning on and off
Dv/dt and di/dt is identical in each period in journey, it is possible to IGBT series average-voltage or parallel current-sharing is realized, so as to more
Add the intelligent series average-voltage or parallel current-sharing of realizing IGBT modules.
Brief description of the drawings
Fig. 1 is the flow chart one of the embodiment of the present invention one；
Fig. 2 is the flowchart 2 of the embodiment of the present invention two；
Fig. 3 is particular flow sheet of the embodiment of the present invention one, two for IGBT opening processes；
Fig. 4 be in the present invention embodiment one, two for the particular flow sheet of IGBT turn off process；
Fig. 5 is the embodiment of the present invention one, two for IGBT n-th in opening process (n=1,2 ..., n) individual period
Specific adjustment figure；
Fig. 6 is the flow chart that the embodiment of the present invention one, two detects on VCE；
Fig. 7 is embodiment one, the specific determination methods of two VCE detection circuits；
Fig. 8 is the circuit diagram of intelligent IGBT drivings digital in the embodiment of the present invention three, four, five；
Fig. 9 is a kind of embodiment of variable gate resistance in the embodiment of the present invention three, four, five；
Figure 10 is the circuit diagram that VCE is detected in the embodiment of the present invention three, four, five；
Figure 11 is the circuit diagram that di/dt is detected in the embodiment of the present invention three, four, five；
Figure 12 is circuit diagram when being applied to N number of IGBT series connection in the embodiment of the present invention four；
It is applied to circuit diagram during N number of IGBT parallel connections in Figure 13 embodiment of the present invention five.
Embodiment
With reference to embodiment and compare accompanying drawing the present invention is described in further detail.It is emphasized that
What the description below was merely exemplary, the scope being not intended to be limiting of the invention and its application.
With reference to figure 1 below -13, non-limiting and nonexcludability embodiment, wherein identical reference will be described
Identical part is represented, unless stated otherwise.
Embodiment one：
The present embodiment proposes a kind of digital intelligent IGBT driving methods, for control IGBT modules it is upper it is electric with it is disconnected
It is switched on or off between electricity with a regular time, as shown in figure 1, comprising the following steps：
S1：After upper electricity, the di/dt data and dv/dt numbers for being switched on or off n-th of minor time slice in the period are detected
According to；
S2：According to the di/dt data of acquisition and the dv/dt data, judge within n-th of minor time slice described in
Whether di/dt data and the dv/dt data are consistent with preset value；
S3：The array pattern of variable gate resistance is adjusted within n-th of minor time slice according to judged result, accordingly
The length for being switched on or off the time of IGBT modules is controlled, and array pattern corresponding to the variable gate resistance of time period is entered
Row memory storage；
S4：The di/dt data and dv/dt data of (n+1)th minor time slice are detected, perform step S2 and step S3 again,
Circulated m times with this, until the di/dt data and the dv/dt data are consistent with preset value；
S5：It is switched on or off subsequently in the period, memory storage is each in being circulated according to m times of step S1 to step S4
The array pattern of the variable gate resistance of minor time slice is switched on or off, until power-off；
Di/dt is current changing rate；Dv/dt is voltage change ratio；N=1,2,3 ..., n；M=1,2,3 ..., m.
As shown in figure 3, in IGBT module opening processes, the dv/dt and di/dt of n-th of period are detected, and judgement is
No and corresponding n-th of period default dv/dtonnAnd di/dtonnIt is consistent, if not being consistent, judgement is greater than also being less than this
The preset value of period.If greater than the preset value of the period, then variable gate electricity is opened in the adjustment of corresponding service time section
Hinder to increase gate pole open resistance；If less than preset value, then the adjustment of corresponding service time section open variable gate resistance with
Reduce gate pole open resistance, the period is detected again when IGBT modules are opened next time, judge, adjusted, so
Circulation, preset value dv/dt is opened until dv/dt, di/dt in the period and corresponding periodonnAnd di/dtonnIt is consistent
Untill.Hereafter, n-th of period in IGBT module opening processes, the variable gate resistance just adjusted with the period
IGBT modules are carried out open-minded.
As shown in figure 4, in IGBT module turn off process, the dv/dt and di/dt of n-th of period are detected, and judgement is
No and corresponding n-th of period default dv/dtoffnAnd di/dtoffnIt is consistent, if not being consistent, judgement is greater than also being less than
The preset value of the period.If greater than the preset value of the period, then shut-off variable gate is adjusted in corresponding turn-off time section
Resistance turns off resistance to increase gate pole；If less than preset value, then shut-off variable gate resistance is adjusted in corresponding turn-off time section
To reduce gate pole shut-off resistance, the period is detected again when IGBT modules turn off next time, judged, adjusted, such as
This circulation, until dv/dt, di/dt in the period and the shut-off preset value dv/dt of corresponding periodoffnAnd di/dtoffnPhase
Untill symbol.Hereafter, n-th of period in IGBT module turn off process, the variable gate electricity just adjusted with the period
Resistance turns off to IGBT modules.
As shown in figure 5, in IGBT module first time opening processes, dv/dt, di/dt of the period are detected, respectively
For：dv/dton1And di/dton1, less than the preset value dv/dt of the period after judgementon1And di/dton1, when adjusting this and opening
Between open variable gate resistance to reduce gate pole open resistance value corresponding to section；In second of opening process, the time is detected
Dv/dt, di/dt of section, it is respectively：dv/dton2And di/dton2, more than the preset value dv/dt of the period after judgementon1With
di/dton1, adjust and variable gate resistance opened corresponding to the service time section to increase gate pole open resistance value；So circulation,
Until in the m times opening process, untill detecting that dv/dt, di/dt of the period is consistent with preset value.Hereafter, in IGBT moulds
N-th of period in group opening process, just IGBT modules are carried out with the variable gate resistance that the period adjusts open-minded.
The adjustment process of IGBT modules (n=1,2 ..., n) individual period n-th in turn off process is similar with opening process,
Repeat no more.
In the present embodiment, whole opening process is divided into n period：ton0~ton1、ton1~ton2、┅、tonn-1~tonn,
The corresponding preset value dv/dt for opening dataonAnd di/dtonRespectively one group 1*n matrix, i.e.,：{dv/dton1, dv/dton2,
┅, dv/dtonnAnd { di/dton1, di/dton2, ┅, di/dtonn, open data dv/dt corresponding n-thonnAnd di/
dtonn, dv/dt corresponding to n-th of period is represented respectivelyonPreset value and di/dtonPreset value.
Whole turn off process is divided into n period：toff0~toff1、toff1~toff2、┅、toffn-1~toffn, corresponding shut-off
The preset value dv/dt of dataoffAnd di/dtoffRespectively one group 1*n matrix, i.e.,：{dv/dtoff1, dv/dtoff2, ┅, dv/
dtoffnAnd { di/dtoff1, di/dtoff2, ┅, di/dtoffn, corresponding n-th of shut-off data dv/dtoffnAnd di/dtoffn,
Dv/dt corresponding to n-th of period is represented respectivelyoffPreset value and di/dtoffPreset value.
The intelligent drives mode of above-mentioned middle proposition, by several minor time slices pair that the time is switched on or off at one
The IGBT time that turns on and off is adjusted, and can approach preset value rapidly, due to turning on and off typically in μ s levels for IGBT,
Contrasted by detecting dv/dt, di/dt data, and by dv/dt, di/dt and preset value, it is possible to achieve smaller at one
Judge in period and analyze, repeatedly circulation is realized, quickly to approach preset value.
In the present embodiment, as shown in fig. 6, further comprising the steps of：
1) electric circuit inspection collection emitter voltage VCE (VCE) is detected by VCE；
2) according to the different VCE threshold voltage values preset, by the collection emitter voltage VCE got and different institutes
State VCE threshold voltage values to be compared, obtain threshold voltage window residing for the collection emitter voltage VCE；
3) comparison result is carried out in the form of data signal according to residing threshold voltage window analyzing the IGBT moulds
The short-circuit condition of group.
As shown in fig. 7, wherein, 0 represents low level, and 1 represents high level, and 0,1 is the letter that digital control chip can identify
Number；The VCE threshold voltage values include the first VCE threshold voltage values (VCEREF1), the 2nd VCE threshold voltage values (VCEREF2),
Three VCE threshold voltage values (VCEREF3) and the 4th VCE threshold voltage values (VCEREF4), VCEREF1~VCEREF4Respectively set in advance
The VCE put different threshold voltages, and VCEREF1<VCEREF2<VCEREF3<VCEREF4, by detecting the scope residing for VCE simultaneously
It will determine that result VCE1~VCE4 is transmitted to digital control chip to judge which kind of state IGBT is in.Certainly, it is only open-minded in IGBT
When just VCE (collection emitter voltage VCE) is detected, it will not be detected during shut-off.Work as VCE<VCEREF1When, judge
IGBT is in normal condition；Work as VCEREF1<VCE<VCEREF2When, judge that the short circuit of two classes occurs for IGBT；Work as VCEREF2<VCE<
VCEREF3、VCEREF3<VCE<VCEREF4Or VCE>VCEREF4When, judge that a kind of short circuit occurs for IGBT, and VCE is more big, illustrates one
Class short circuit is more serious.
The short-circuit detecting of the present embodiment is judged by gathering collection emitter voltage through multiple comparators, according to judgement
Obtain data signal and the judgement for completing short circuit is controlled through digital control chip, certainly, can also be only with one in the present embodiment
Comparator is compared, and for judging the short circuit of single type, the present embodiment is not limited；By above-mentioned detection method, it is not required to
It will detect that collection emitter voltage delivers to digital control chip again after change-over circuit is changed, and improve the speed of judgement, this
The comparator at place can be high-speed type, to reduce delay.
Embodiment two
As shown in Fig. 2 the present embodiment and the difference of embodiment one are：The present embodiment has two kinds of working methods after the power-up：
1. it is operated with the data that turn on and off that peripheral control unit gives；2. what is stored when being powered off with last time turns on and off number
According to being operated.After system electrification, first determine whether peripheral control unit is given and turn on and off data accordingly.If give
Fixed, then the data that are given with peripheral control unit control the break-make of IGBT modules；Otherwise, system is stored when being powered off with last time
Data control the break-make of IGBT modules.Hereafter, detected in each period during turning on and off each time
IGBT collector voltage rate dv/dt and collector current rate of change di/dt, and data corresponding to each period are passed through
Digital control chip is transmitted in real time after change-over circuit conversion, to judge whether and default data in chip internal each period
It is consistent.If being consistent, directly IGBT modules are turned on and off with the value so that IGBT modules being opened and closing setting
The disconnected time is turned on and off with dv/dt, di/dt for being consistent with preset value；Otherwise, IGBT in each period is detected in real time
Dv/dt and di/dt, it is adaptive to adjust variable gate resistance, resistance is turned on and off by changing, finally makes IGBT modules
It can turn on and off in the time defined, be run with the dv/dt and di/dt that are consistent with each period preset value.Hereafter,
Just IGBT modules are turned on and off with the value, and stored corresponding data in system cut-off, in case on next time
Used when electric.
In the present embodiment, when short trouble occurs, system circuit can be detected according to VCE and di/dt detects circuit
To distinguish the state of IGBT short circuits, i.e.,：When di/dt detection circuits are transmitted to digital control chip low level, represent and short circuit occurs
Failure, while further according to four groups of signals that VCE detection circuits are passed back, to judge that IGBT modules happens is that a kind of short circuit or two classes
Short circuit, and IGBT is turned off by mode corresponding to selection, to avoid the due to voltage spikes occurred during shut-off from exceeding IGBT safe work
Make area.Compared to the conventional method for distinguishing IGBT short circuits, it is relative that the present invention puies forward the reliability that differentiating approach judges for short-circuit condition
It is higher.
Embodiment three
Fig. 8 is a kind of circuit diagram of digital intelligent IGBT drive systems of the present embodiment, including detection IGBT moulds
The group data detection circuit of operating state data, change-over circuit 4, digital control chip 5, drive circuit, variable gate resistance 10,
Peripheral control unit 12 and memory 13；The data detection circuit includes dv/dt detection circuits 1 and di/dt detection circuits 3,
The input of the di/dt detections circuit 3 is connected with the colelctor electrode of IGBT modules, output end and the input phase of change-over circuit 4
Even；Di/dt detection circuit 3 input be connected with IGBT power emitter and auxiliary emitter electrode, output end respectively with conversion
The input of circuit 4 and digital control chip 5 is connected.
The output end of change-over circuit 4 is connected with the input of digital control chip 5, by the IGBT modules collected
Dv/dt and di/dt exports to digital control chip 5 so that it analyzes the state of IGBT modules, and the knot that will be performed in real time
Fruit is transmitted to variable gate resistance 10 through drive circuit 9, realizes that IGBT modules exist by changing the resistance of variable gate resistance 10
Fixed turned on and off in the time, was turned on and off with the dv/dt and di/dt that set；The output end of digital control chip 5
It is connected with the input of memory 13, corresponding data is stored in memory 13, used when convenient next electric.
Fig. 9 is a kind of embodiment of variable gate resistance 10 in the present embodiment, the electric routing switch device and corresponding
Resistor network is formed.In figure, switch S11~switch S1n one end is connected with the turning-on voltage VCC of IGBT modules, the other end point
One end not with open resistance Rgon1~Rgonn is connected, and the open resistance Rgon1~Rgonn other end is then connected to IGBT moulds
The base stage of group, by the break-make (1 represent respective switch open-minded, 0 represents respective switch shut-off) for controlling n switch S11~S1n
Whether is the access of the corresponding open resistance of control, and so as to control the resistance of open resistance, the switch of access is more, open resistance
Smaller, the control method for accordingly opening variable gate resistance 10 shares：Kind；Open
Close S21~switch S2n one end be connected with IGBT shut-off voltage VEE, the other end then respectively with shut-off resistance Rgoff1~
Rgoffn one end is connected, and the other end for turning off resistance Rgoff1~Rgoffn is then connected to the base stage of IGBT modules, passes through control
N switch S21~S2n processed break-make (1 represent respective switch open-minded, 0 represents respective switch shut-off) controls corresponding shut-off electricity
Whether is the access of resistance, and so as to control the resistance of shut-off resistance, the switch of access is more, and shut-off resistance is smaller, accordingly turns off variable
The control method of gate electrode resistance 10 shares：Kind.The present embodiment is mainly by real-time
The dv/dt and di/dt in different time sections, and corresponding adjustment variable gate resistance 10 are detected, change turns on and off resistance
Resistance, IGBT modules are enable to be turned on and off defined in the time, it is open-minded with the dv/dt and di/dt that are consistent with preset value
And shut-off.Therefore, what variable gate resistance 10 ultimately formed is two matrixes, i.e.,：Related to service time opens gate pole electricity
Hinder matrix and the shut-off gate electrode resistance matrix related to the turn-off time.
As shown in Figure 10, in addition to VCE detection circuits 2, the VCE detect the input of circuit 2 and the collection of IGBT modules
Electrode is connected, and output end is connected with the input of digital control chip 5；
Compared with by threshold voltages different with four groups the VCE after decompression is handled, obtain being transmitted to digital control chip 5
Four groups of data signals, the circuit diagram detected for the di/dt shown in Figure 11, pass through the di/dt after decompression is handled and threshold value electricity
Press VEREFCompare, obtain being transmitted to the signal of digital control chip 5.Work as di/dt>VEREFWhen, comparator output low level, it is transmitted to number
Word control chip 5, judge that short trouble occurs for IGBT modules；Work as di/dt<VEREFWhen, comparator output low level, it is transmitted to numeral
Control chip 5, judge IGBT modules for normal condition.
As shown in figure 8, the present embodiment may also include active clamp ACL circuits 11, have when IGBT collection emitter voltages VCE exceedes
During the permissible value of source clamper ACL circuits 11, active clamp ACL circuits 11 are acted, and IGBT module collection emitter voltage VCE clampers are existed
In the range of system allows.
As shown in figure 8, the present embodiment may also include signal designation module 5, system can export phase by signal designation module 5
The status signal for the IGBT modules answered, especially the external world can be timely sent to when IGBT modules break down, so as to realize
Protection to whole system.
Certainly, as shown in figure 8, the present embodiment may also include undervoltage detection circuit 6, excess temperature detection circuit 7, under-voltage detection electricity
The input of road 6 and the output end of excess temperature detection circuit 7 and peripheral control unit 12 with digital control chip 5 is connected, will
Input voltage signal and temperature signal are transmitted to digital control chip 5.
Example IV
When IGBT modules in parallel or when being used in series, without selection IGBT modules in advance working method (single tube, series connection,
It is in parallel), also it is same producer even same batch without IGBT modules used in strict demand, only need to ensures each IGBT modules
The time that turns on and off fix, that is, ensure that dv/dt and di/dt is identical within each period during turning on and off,
Can realizes IGBT series average-voltage or parallel current-sharing, so as to the more intelligent series average-voltage for realizing IGBT modules or parallel connection
Flow.
Figure 12 is shown puies forward a kind of digital intelligent IGBT drive system applications in N number of IGBT modules string by the present invention
Circuit diagram during connection.In fig.9, each IGBT modules are both needed to the digital intelligent IGBT drivings that a present invention is proposed, to
Corresponding IGBT modules are controlled in set time on/off so that each IGBT module can be opened with the constant time/
Shut-off, finally realizes series average-voltage.
Embodiment five
Figure 13, which show that the present embodiment is carried a kind of digital intelligent IGBT and driven, is applied to N number of IGBT modules in parallel
When circuit diagram.In fig. 13, each IGBT modules are both needed to the digital intelligent IGBT drivings that a present invention is proposed, to control
Corresponding IGBT modules are made in set time on/off, so that each IGBT module can be opened/closed with the constant time
It is disconnected, finally realize parallel current-sharing.
Therefore, compared to conventional digital drive, the present embodiment puies forward a kind of intelligence of digital intelligent IGBT drive systems
It can change that degree is higher, and reliability is higher, applicability is stronger.
It would be recognized by those skilled in the art that it is possible that numerous accommodations are made to above description, so embodiment is only
For describing one or more particular implementations.
Although having been described above and describing the example embodiment for being counted as the present invention, it will be apparent to those skilled in the art that
It can be variously modified and replaced, without departing from the spirit of the present invention.Furthermore it is possible to many modifications are made with by spy
Condition of pledging love is fitted to the religious doctrine of the present invention, without departing from invention described herein central concept.So the present invention is unrestricted
In specific embodiment disclosed here, but the present invention all embodiments that may also include belonging to the scope of the invention and its equivalent
Thing.
Claims (10)
1. a kind of digital intelligent IGBT driving methods, it is characterised in that for controlling IGBT modules in upper electricity and power-off
Between be switched on or off with a regular time, comprise the following steps：
S1：After upper electricity, the di/dt data and dv/dt data for being switched on or off n-th of minor time slice in the period are detected；
S2：According to the di/dt data of acquisition and the dv/dt data, the di/dt is judged within n-th of minor time slice
Whether data and the dv/dt data are consistent with preset value；
S3：The array pattern of variable gate resistance is adjusted within n-th of minor time slice according to judged result, corresponding control
The length for being switched on or off the time of IGBT modules, and array pattern corresponding to the variable gate resistance of time period is remembered
Recall storage；
S4：The di/dt data and dv/dt data of (n+1)th minor time slice are detected, step S2 and step S3 are performed again, with this
Circulation m times, until the di/dt data and the dv/dt data are consistent with preset value；
S5：It is switched on or off subsequently in the period, according to each hour of memory storage in m times of step S1 to step S4 circulation
Between the array pattern of variable gate resistance of section be switched on or off, until power-off；
Di/dt is current changing rate；Dv/dt is voltage change ratio；N=1,2,3 ..., n；M=1,2,3 ..., m.
2. digital intelligent IGBT driving methods as claimed in claim 1, it is characterised in that further comprising the steps of：
1) electric circuit inspection collection emitter voltage VCE is detected by VCE；
2) according to the different VCE threshold voltage values preset, by described in the collection emitter voltage VCE got and difference
VCE threshold voltage values are compared, and obtain threshold voltage window residing for the collection emitter voltage VCE；
3) comparison result is carried out in the form of data signal according to residing threshold voltage window analyzing the IGBT modules
Short-circuit condition.
3. digital intelligent IGBT driving methods as claimed in claim 2, it is characterised in that further comprising the steps of：It is described
VCE threshold voltage values include the first VCE threshold voltage values, the 2nd VCE threshold voltage values, the 3rd VCE threshold voltage values and the 4th
VCE threshold voltage values, the first VCE threshold voltage values<The 2nd VCE threshold voltage values<The 3rd VCE threshold voltages
Value<The 4th VCE threshold voltage values；As the collection emitter voltage VCE<During the first VCE threshold voltage values, IGBT modules are judged
In normal condition；When the first VCE threshold voltage values<Collect emitter voltage VCE<During the 2nd VCE threshold voltage values, IGBT moulds are judged
The short circuit of two classes occurs for group；When the 2nd VCE threshold voltage values<Collect emitter voltage VCE<3rd VCE threshold voltage values, the 3rd VCE thresholds
Threshold voltage value<Collect emitter voltage VCE<4th VCE threshold voltage values or collection emitter voltage VCE>During the 4th VCE threshold voltage values,
Judge that a kind of short circuit occurs for IGBT modules, and the more big a kind of short circuits of then explanation of the collection emitter voltage VCE are more serious.
4. digital intelligent IGBT driving methods as claimed in claim 1, it is characterised in that whole opening process is divided into n
Period：ton0~ton1、ton1~ton2、┅、tonn-1~tonn, the corresponding preset value dv/dt for opening dataonAnd di/dtonRespectively
For one group of 1*n matrix, i.e.,：{dv/dton1, dv/dton2, ┅, dv/dtonnAnd { di/dton1, di/dton2, ┅, di/
dtonn, open data dv/dt corresponding n-thonnAnd di/dtonn, dv/dt corresponding to n-th of period is represented respectivelyonIt is default
Value and di/dtonPreset value.
5. digital intelligent IGBT driving methods as claimed in claim 1, it is characterised in that whole turn off process is divided into n
Period：toff0~toff1、toff1~toff2、┅、toffn-1~toffn, the corresponding preset value dv/dt for turning off dataoffAnd di/
dtoffRespectively one group 1*n matrix, i.e.,：{dv/dtoff1, dv/dtoff2, ┅, dv/dtoffnAnd { di/dtoff1, di/dtoff2,
┅, di/dtoffn, corresponding n-th of shut-off data dv/dtoffnAnd di/dtoffn, represent respectively corresponding to n-th of period
dv/dtoffPreset value and di/dtoffPreset value.
6. digital intelligent IGBT driving methods as claimed in claim 1, it is characterised in that circuit and di/ are detected according to VCE
To distinguish the state of IGBT modules short circuit, i.e., dt detects circuit：When di/dt detection circuits are transmitted to the low electricity of digital control chip module
Usually, represent and short trouble occurs, while further according to four groups of signals that VCE detection circuits are passed back, to judge that IGBT modules occur
Be a kind of short circuit or the short circuit of two classes, and IGBT is turned off by mode corresponding to selection.
7. digital intelligent IGBT driving methods as claimed in claim 1, it is characterised in that after the power-up, first determine whether outer
Whether portion's controller is given to turn on and off data accordingly；If given, the data that are given with peripheral control unit control
The break-make of IGBT modules；Otherwise, the data that system is stored when being powered off with last time control the break-make of IGBT modules.
8. a kind of digital intelligent IGBT drive systems, it is characterised in that for realizing any one of the claims 1-7 institutes
State digital intelligent IGBT driving methods, including the data detection circuit of detection IGBT module operating state datas, conversion electricity
Road, digital control chip, drive circuit, variable gate resistance, memory and peripheral control unit, the digital control chip are used for
IGBT working condition is judged, in the drive circuit and by the variable gate under the digital control chip in real time control
Resistance drives IGBT；The data detection circuit includes dv/dt detection circuits and di/dt detection circuits, the dv/dt detections
The signal of electric circuit inspection supplies the digital control chip module analysis after being converted into data signal by the change-over circuit；It is described
The signal of di/dt detection electric circuit inspections is converted into data signal for the digital control chip module point through the change-over circuit
Analysis, while the signal of di/dt detection electric circuit inspections is directly transmitted to digital control chip module analysis after comparing processing；
The memory is switched on or off data for storage；Peripheral control unit, for after the power-up according to the open-minded of memory storage
Or data are turned off, or the data control IGBT modules that are switched on or off that peripheral control unit gives carry out break-make.
9. digital intelligent IGBT drive systems as claimed in claim 8, it is characterised in that：Also include VCE detection circuits, institute
The signal for stating VCE detection electric circuit inspections directly supplies the digital control chip module analysis, institute without change-over circuit conversion
Stating VCE detection circuits includes the comparator of four different VCE threshold voltage values preset.
10. digital intelligent IGBT drive systems as claimed in claim 8, it is characterised in that：Also include undervoltage detection circuit,
Excess temperature detection circuit, active clamped ACL circuits and or signal designation module.
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| CN109921606A (en) * | 2017-12-12 | 2019-06-21 | 北京天诚同创电气有限公司 | Current equalizing method, the apparatus and system of power module |
| CN110673010A (en) * | 2019-10-29 | 2020-01-10 | 全球能源互联网研究院有限公司 | Method and device for measuring and calculating grid internal resistance of power semiconductor device |
| CN112731093A (en) * | 2020-12-14 | 2021-04-30 | 中车永济电机有限公司 | High-power IGBT adaptation method |
| CN115021739A (en) * | 2022-06-24 | 2022-09-06 | 重庆大学 | Dynamic regulation and control circuit and method based on direct detection of device switching voltage change rate |
| CN112731093B (en) * | 2020-12-14 | 2024-04-19 | 中车永济电机有限公司 | High-power IGBT adaptation method |
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| CN115021739A (en) * | 2022-06-24 | 2022-09-06 | 重庆大学 | Dynamic regulation and control circuit and method based on direct detection of device switching voltage change rate |
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