CN107332528A - A kind of tunable multiple frequency section power amplifier - Google Patents
A kind of tunable multiple frequency section power amplifier Download PDFInfo
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- CN107332528A CN107332528A CN201710683702.8A CN201710683702A CN107332528A CN 107332528 A CN107332528 A CN 107332528A CN 201710683702 A CN201710683702 A CN 201710683702A CN 107332528 A CN107332528 A CN 107332528A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention discloses a kind of tunable multiple frequency section power amplifier, it can effectively amplify the signal of multiple frequency ranges in wider frequency range.Including input resistant matching network, amplifier tube and the output impedance matching networks being sequentially connected；Input resistant matching network is to constitute matching network using electric capacity, inductance, resistance, microstrip line or their any combination with output impedance matching networks, realizes impedance matching, and is not limited solely to the matched form using microstrip line.And change the matching network of power amplifier by RF switch so that power amplifier can be operated in multiple frequency ranges, while not reducing performance of the power amplifier in each working frequency range.In addition, the present invention can be generalized to other frequency ranges or other kinds of high frequency power amplifier, have broad application prospects and practical value.
Description
Technical field
The invention belongs to power amplifier field, more particularly, to a kind of tunable multiple frequency section power amplifier.
Background technology
In recent years, wireless communication system has developed out extensive standard of all kinds, these and the standard deposited is to wireless network
Network carries out dynamic management, and this radio system for allowing for special single carrier frequency changes to general and Adaptable System,
Effectively to handle extensive frequency band.In other words, following radio system should be able to deal with different standards and be advised
Fixed different centre frequencies and signal bandwidth, while keeping competitive performance indications.Research in recent years is all main
The efficiency enhancement techniques of single standard radio system are concentrated on, the envelope of peak-to-average power ratio, such as drain voltage modulation is improved
Tracking technique and the Doherty technologies of load modulation, but these technologies have frequency bandwidth limitation, therefore be mainly limited to
The deployment scheme of single standard.Then broadband or the multiband power amplifier design for multiple standards are begun with, than
The dynamic load modulation technology of such as J power-like amplifiers and varactor, is realized on broadband or multiband peak
It is worth delivery efficiency, but these technologies are less efficient in back-off region.Fig. 1 describes a kind of conventional ultrabroad band
Power amplifier structure block diagram, by introducing the matching network of ultra wide band or using new load balance factor technology so that designed
The frequency response width of power amplifier is expanded.However, the paradox of bandwidth and efficiency to design high efficiency, high linearity
Distributed power amplifier turns into problem.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, the invention provides a kind of section power amplification of tunable multiple frequency
Device, its object is to solve existing multiband power amplifier due to causing frequency band width efficiency only with micro-strip tuned impedance
Low technical problem.
To achieve the above object, it is of the invention to provide a kind of tunable multiple frequency section power amplifier, including：
Input resistant matching network, amplifier tube and the output impedance matching networks being sequentially connected；Amplifier tube is used for adjustable
The transmission signal that multiband power amplifier input is received is amplified processing；
Input resistant matching network includes the first micro-strip, the second micro-strip, input switch module and n secondary input impedance
With networking；Input switch module has n+1 end, and the rear end of the first micro-strip is connected with the front end of the second micro-strip, input switch module
The (n+1)th end be connected with the front end of the second micro-strip, the i-th end of input switch module and i-th level input resistant matching network
Port connection, when frequency transmission signal is i-th of frequency, ith level input resistant matching network, the first micro-strip and second
Micro-strip realizes that tunable multiple frequency section power amplifier input impedance is matched with amplifier tube sending-end impedance；
Output impedance matching networks include the 3rd micro-strip, the 4th micro-strip, output switch module and n secondary output impedance
With networking；Output switch module has n+1 end, and the rear end of the 3rd micro-strip is connected with the front end of the 4th micro-strip, exports beginning module
The (n+1)th end be connected with the front end of the 4th micro-strip, the i-th end of output switch module and i-th level output impedance matching networks
Port connection, when frequency transmission signal be i-th of frequency when, ith level output impedance matching networks, the 3rd micro-strip and the 4th
Micro-strip realizes tunable multiple frequency section power amplifier output impedance and amplifier tube output end impedance matching, wherein, 1≤i≤n.
Preferably, i-th level output impedance matching networks are any combination of resistance, electric capacity, inductance and micro-strip.
Preferably, i-th level input resistant matching network is that a resistance, an inductance, an electric capacity or one are micro-
Band line.
Preferably, i-th level input resistant matching network be the resistance and inductance of series connection, the resistance of series connection and electric capacity,
The inductance and electric capacity of series connection, resistance in parallel and inductance, resistance in parallel and electric capacity or the inductance and electric capacity of parallel connection.
Preferably, i-th level input resistant matching network is the electricity for resistance, inductance and electric capacity or the parallel connection being sequentially connected in series
Resistance, inductance and electric capacity.
Preferably, i-th level output impedance matching networks are any combination of resistance, electric capacity, inductance and micro-strip.
Preferably, i-th level output impedance matching networks are that a resistance, an inductance, an electric capacity or one are micro-
Band line.
Preferably, i-th level output impedance matching networks be the resistance and inductance of series connection, the resistance of series connection and electric capacity,
The inductance and electric capacity of series connection, resistance in parallel and inductance, resistance in parallel and electric capacity or the inductance and electric capacity of parallel connection.
Preferably, i-th level output impedance matching networks are the electricity for resistance, inductance and electric capacity or the parallel connection being sequentially connected in series
Resistance, inductance and electric capacity.
In general, by the contemplated above technical scheme of the present invention compared with prior art, can obtain following has
Beneficial effect：
Due to propose by RF switch be used for impedance matching network structure, wherein impedance matching network be resistance, electric capacity,
Micro-strip, inductance any combination, can eliminate power amplifier by the different secondary matching networks of switch switching and be operated in difference
The impedance mismatching produced during frequency range, so as to improve the service behaviour of power amplifier.Compared to Unit selection type power amplifier, ultra-wideband
These multiband power amplifiers of band power amplifier etc., the present invention solves the contradiction of bandwidth and efficiency and with working frequency range simultaneously
The increase of number, the volume increase of circuit, the problem of causing cost increase.Meanwhile, the present invention can be generalized to other frequency ranges or
Other kinds of high frequency power amplifier, designs very flexible, using widely, possessing very big practical value.
Brief description of the drawings
Fig. 1 is the ultrabroad band power amplifier structure block diagram of background technology；
Fig. 2 is the structural representation for the tunable multiple frequency section power amplifier that the present invention is provided；
Fig. 3 is the structural representation for the tunable multiple frequency section power amplifier embodiment that the present invention is provided；
Fig. 4 is the structural representation for the tunable multiple frequency section power amplifier embodiment middle impedance matching network that the present invention is provided
Figure；
Fig. 5 is Smith's artwork of output impedance in the tunable multiple frequency section power amplifier embodiment that the present invention is provided.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Not constituting conflict each other can just be mutually combined.
The structural representation for the tunable multiple frequency section power amplifier that Fig. 2 provides for the present invention, tunable multiple frequency section power amplification
Device includes input resistant matching network, amplifier tube and the output impedance matching networks being sequentially connected；Input resistant matching network is used
In realizing amplifier tube sending-end impedance matching, output impedance matching networks are used to realize amplifier tube output end impedance matching.
Input resistant matching network includes the first micro-strip, the second micro-strip, input switch module and n secondary input impedance
With networking；Input switch module has n+1 end, and the rear end of the first micro-strip is connected with the front end of the second micro-strip, input switch module
The (n+1)th end be connected with the front end of the second micro-strip, the i-th end of input switch module and i-th level input resistant matching network
Port connection, the front end of the first micro-strip is the input of input resistant matching network, and the rear end of the second micro-strip is input impedance
The output end of matching network.When frequency transmission signal is i-th of frequency, ith level input resistant matching network, the first micro-strip
Realize that tunable multiple frequency section power amplifier input impedance is matched with amplifier tube sending-end impedance with the second micro-strip；Wherein, 1≤i
≤n。
Output impedance matching networks include the 3rd micro-strip, the 4th micro-strip, output switch module and n secondary output impedance
With networking；The rear end of 3rd micro-strip is connected with the front end of the 4th micro-strip, before the (n+1)th end and the 4th micro-strip that export beginning module
End connection, the i-th end of output switch module is connected with the port of i-th level output impedance matching networks, before the 3rd micro-strip
The input for output impedance matching networks is held, the rear end of the 4th micro-strip is the output end of output impedance matching networks.Work as transmission
When signal frequency is i-th of frequency, ith level output impedance matching networks, the 3rd micro-strip realize tunable multiple frequency with the 4th micro-strip
Section power amplifier output impedance and amplifier tube output end impedance matching.
Input switch module and output switch module are single pole multiple throw, are connected in parallel in impedance matching network, and simultaneously
Multiple paths are connected, when transmitting i-th of working frequency range signal in tunable multiple frequency section power amplifier, only i-th level is defeated
Go out impedance matching network to be connected with the 3rd micro-strip, i-th time level input resistant matching network is connected with the first micro-strip, realizes i-th
Impedance matching in individual frequency range.When working frequency range switches, switch switches to another path conducting, realizes that matching network switches,
Ensure the impedance matching in another frequency range.
The port of i-th level input resistant matching network of different structure is analyzed below：
When i-th level input resistant matching network is a resistance, resistance one end is i-th level input impedance
The port of distribution network, resistance other end ground connection.When i-th level input resistant matching network is an inductance, inductance one end
For the port of i-th level input resistant matching network, inductance other end ground connection.When i-th level input resistant matching network
During for an electric capacity, electric capacity one end is the port of i-th level input resistant matching network, electric capacity other end ground connection.When i-th
When secondary input resistant matching network is a micro-strip, micro-strip one end is the port of i-th level input resistant matching network, micro-
The band other end is opened a way or is grounded.
I-th level input resistant matching network can for series connection resistance and inductance, rear end and inductance when resistance
When front end is connected, the front end of resistance is the port of i-th level input resistant matching network, the rear end ground connection of inductance；Work as resistance
Front end and the rear end of inductance when connecting, the front end of inductance for i-th level input resistant matching network port, after resistance
End ground connection.I-th level input resistant matching network can be the inductance and electric capacity of series connection, when before the rear end of electric capacity and inductance
During the connection of end, the front end of electric capacity is the port of i-th level input resistant matching network, the rear end ground connection of inductance；When electric capacity
When front end and the connection of the rear end of inductance, the front end of inductance is the port of i-th level input resistant matching network, the rear end of electric capacity
Ground connection.I-th level input resistant matching network can be the resistance and electric capacity of series connection, when the rear end and the front end of electric capacity of resistance
During connection, the front end of resistance is the port of i-th level input resistant matching network, the rear end ground connection of electric capacity；When before resistance
When end is connected with the rear end of electric capacity, the front end of electric capacity is the port of i-th level input resistant matching network, the rear termination of resistance
Ground.
When i-th level input resistant matching network is resistance and inductance in parallel, one end of resistance is i-th level
The port of input resistant matching network, the other end ground connection of resistance；When i-th level input resistant matching network is electricity in parallel
When resistance and electric capacity, one end of electric capacity is the port of i-th level input resistant matching network, the other end ground connection of electric capacity；When i-th
When individual secondary input resistant matching network is electric capacity and inductance in parallel, one end of inductance is i-th level input resistant matching
The port of network, the other end ground connection of inductance.
When i-th level input resistant matching network is microstrip line, the rear end ground connection of microstrip line, the front end of microstrip line is
The port of i-th level input resistant matching network.
When resistance, inductance and the electric capacity that end is sequentially connected in series headed by i-th level input resistant matching network, before resistance
When holding the port for i-th level input resistant matching network, the rear end ground connection of electric capacity.I-th level input resistant matching net
Network can also be resistance, inductance and electric capacity in parallel, and one end of electric capacity is the port of i-th level input resistant matching network,
The other end ground connection of electric capacity.
I-th level output impedance matching networks are a resistance, an inductance, an electric capacity or a microstrip line.I-th
Individual secondary output impedance matching networks can also for series connection resistance and inductance, series connection resistance and electric capacity, series connection inductance and
Electric capacity, resistance in parallel and inductance, resistance in parallel and electric capacity, inductance in parallel and electric capacity can be microstrip line.I-th
Secondary output impedance matching networks can also be resistance, inductance and the electric capacity being sequentially connected in series or be resistance in parallel, inductance and
Electric capacity.I-th level input resistant matching network port analysis is with i-th level output impedance matching networks port analysis phase
Together.
Due to each secondary output impedance matching networks be single resistance, single inductance, Single Capacitance, single micro-strip or
It is a kind of in resistance, inductance, any scheme of any combination or microstrip line of electric capacity and micro-strip, it is possible to achieve each output impedance
Impedance matching of the distribution network under a working frequency, switches the secondary output resistance for accessing amplifying circuit by output switch module
Anti- matching network, realizes the impedance matching under the working frequency so that the scope of output impedance tuning becomes big.I-th time simultaneously
Level input resistant matching network be single resistance, single inductance, Single Capacitance, single micro-strip or resistance, inductance, electric capacity and
It is a kind of in any scheme of any combination or microstrip line of micro-strip, it is possible to achieve each secondary input resistant matching network is in a work
Impedance matching under working frequency, switches the secondary input resistant matching network for accessing amplifying circuit by input switch module, real
The now impedance matching under the working frequency so that the scope of input impedance tuning becomes big.It is achieved in the impedance on multiband
Match somebody with somebody, expand the bandwidth of operation of amplifier.
The structural representation applied in GaN Doherty power amplifiers that Fig. 3 provides for the present invention；Circuit is tied substantially
Structure is made up of two amplifiers of carrier amplifier A and peak amplifier B.For the selection of operation class (of an amplifying stage), generally carrier wave is amplified
Device is operated in the higher AB classes of gain, and peak amplifier is generally operational in C classes.Carrier amplifier followed by one section plays resistance
The quarter-wave transmission line TL1 of resistanceization effect, height is transformed to by the load impedance 100ohm under low input power state
50ohm under input power state, realizes load modulation；Meanwhile, the compensating line TL2 after peak value power amplifier causes low input power shape
The impedance of peak value power amplifier is infinitely great under state, is achieved in the load modulation principle of Doherty power amplifier, wherein being generally acknowledged that
Resistance is infinity more than 500 ohm.Also one section of quarter-wave transmission line TL3 is connected to before peak amplifier, is played
Balance the effect of phase.Typically using power splitter or coupler come the input power of distributing carrier wave amplifier and peak amplifier.
Combining network is made up of quarter-wave transmission line TL4 and TL5, and two paths of signals is put by carrier amplifier and peak amplifier
Synthesized and exported by combining network after big, combining network plays a part of load modulation.Because power amplifier is operated in difference
Source impedance Z at Frequency pointin, load impedance ZoutIt is different, and the effect of impedance matching network be by the input of radio circuit,
Outlet terminal load impedance Z1, Z2It is respectively matched to the source impedance Z of power amplifierin, load impedance Zout.In impedance matching net
In the case that network is constant, the working frequency range of power amplifier is in the event of change, the source impedance Z of power amplifierin, load impedance
ZoutIt will change, original matching network will no longer realize impedance matching, so as to influence the performance of power amplifier to refer to
Mark.
Therefore we utilize impedance matching network as shown in Figure 4, in front of carrier amplifier A, after carrier amplifier A
Side, peak amplifier B fronts and the equal series impedance matching network in peak amplifier B rears, impedance matching network include first
Micro-strip, the second micro-strip, RF switch, electric capacity, inductance, resistance and the 3rd micro-strip and the 4th micro-strip.Electric capacity, inductance and resistance according to
It is secondary to constitute the 1st secondary impedance matching network to the 3rd secondary impedance matching network.Using RF switch in power amplifier work
While switching matching network when being changed as frequency range, power amplifier is set to realize impedance on each working frequency range
Match somebody with somebody, so that good performance indications can be had on each working frequency range by realizing.
Fig. 5 is Smith's artwork of output impedance in the GaN Doherty power amplifier embodiments that the present invention is provided.
GaN Doherty power amplifiers when being operated in different frequency range optimal output load impedance differ, respectively with load 1, load 2
With the expression frequency range 1 of load 3, the optimal output impedance of the amplifier tube of frequency range 2 and frequency range 3.We utilize non-unification as shown in Figure 4
Tuning network is most preferably exported to realize under different frequency range by terminating load impedance (50ohm) to GaN Doherty power amplifiers
The impedance matching of load.Radio circuit terminal impedance matches a points by microstrip line Z1 first, then different frequency ranges 1,2,
3 match b points by inductance C1, electric capacity L1 and inductance C2 respectively, needed for finally matching each frequency range by microstrip line Z2 again
The optimal output impedance point load 1 wanted, load 2 and load 3.It can be seen that, two sections of series connection microstrip line Z1And Z2Length is constant, only
, by switching the parallel branch of secondary matching network, to be allowed to be conducted to different elements using RF switch, can be achieved with by
Radio circuit characteristic impedance 50ohm matches output impedance during GaN Doherty power amplifier different operating frequency ranges, input
Matching is also such.
It is also possible to using in different power amplifier types, such as Doherty power amplifier.By
Compensating line and the impedance value of combining structure are also differed when Doherty power amplifier is operated in different frequency range, therefore together
Sample needs RF switch to carry out impedance conversion, now can be by the compensating line of Doherty power amplifier, matching network and conjunction
Line structure is considered as an entirety, modulates three parts simultaneously with a handover network, can minimize RF switch quantity, reduces
The complexity and cost of RF power amplification.
Corresponding to different embodiments, RF switch can have multiplex form, such as：SPDT, SP3T, SP4T etc..Radio frequency
The control pole of switch connects same control voltage source, for accessing additional control low and high level, so that the conducting of controlling switch path
With closing, and ensure the uniformity that each switchs.When being designed for specific embodiment, it can be selected to hinder according to real needs
The form of anti-matching network, such as T-shaped network or pin network, while the position that can be inserted according to specific design selecting switch
And number of switches.Secondary impedance matching network on switch ways can be by electric capacity, inductance, resistance, microstrip line or it
Any combination constitute, as long as matching feature can be realized.Switch can also include PIN by other reconfigurable components
Diode, micro-electromechanical switch (MEMS), MOS switch and varactor etc. are replaced, as long as matching handoff functionality can be realized
.Matching switching is carried out to the input and output matching network of power amplifier using RF switch, to realize to multiple frequency ranges
Radiofrequency signal carries out efficient amplification, meanwhile, minimum RF switch quantity, reduce RF power amplification complexity and into
This, does not increase amplifier tube number and circuit volume.In addition, with the tuning devices such as MEMS varactors, RF switch into
Ripe commercialization, its bandwidth of operation can be more and more wider so that adapt to when a variety of communication standards of Generation Mobile Communication System and deposit, multiple communications
The situation that frequency range is divided.
The invention provides a kind of tunable multiple frequency section power amplifier, input resistant matching network and output impedance pair net
Network is that utilization electric capacity, inductance, resistance, microstrip line or their any combination constitute matching network, is put by matching network handle
The source impedance Z of big pipein, load impedance ZoutIt is respectively matched to input impedance Z1With output impedance Z2, so as to realize impedance matching.
The present invention is not limited solely to the matched form using microstrip line, and its object is to utilize RF switch switched power amplifier work
Make matching network in different frequency range, each frequency range can ensure input, output-resistor respectively with amplifier tube source impedance, negative
Matches impedances are carried, frequency bandwidth is bigger, more efficient, thus solving power amplifier has frequency bandwidth limitation, it is impossible to suitable
Should a variety of communication standards of Generation Mobile Communication System and deposit, multiple communications bands divide situation technical problem.Due to using
The small element ratio such as capacitor and inductor more can reduction circuit volume using micro-strip.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, it is not used to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the invention etc., it all should include
Within protection scope of the present invention.
Claims (9)
1. a kind of tunable multiple frequency section power amplifier, it is characterised in that including：
Input resistant matching network, amplifier tube and the output impedance matching networks being sequentially connected；Amplifier tube is used for tunable multiple frequency
The transmission signal that section power amplifier input is received is amplified processing；
The input resistant matching network includes the first micro-strip, the second micro-strip, input switch module and n secondary input impedance
With networking；The input switch module has n+1 end, and the rear end of first micro-strip is connected with the front end of second micro-strip,
(n+1)th end of the input switch module is connected with the front end of second micro-strip, the i-th end of the input switch module and institute
The port connection of i-th level input resistant matching network is stated, when frequency transmission signal is i-th of frequency, ith level input
Impedance matching network, the first micro-strip realize the tunable multiple frequency section power amplifier input impedance and amplifier tube with the second micro-strip
Sending-end impedance is matched；
The output impedance matching networks include the 3rd micro-strip, the 4th micro-strip, output switch module and n secondary output impedance
With networking；The output switch module has n+1 end, and the rear end of the 3rd micro-strip is connected with the front end of the 4th micro-strip,
(n+1)th end of the output beginning module is connected with the front end of the 4th micro-strip, the i-th end of the output switch module and institute
The port connection of i-th level output impedance matching networks is stated, when frequency transmission signal is i-th of frequency, ith level output
Impedance matching network, the 3rd micro-strip realize the tunable multiple frequency section power amplifier output impedance and amplifier tube with the 4th micro-strip
Output end impedance matching, wherein, 1≤i≤n.
2. tunable multiple frequency section power amplifier as claimed in claim 1, it is characterised in that the i-th level input impedance
Matching network is any combination of resistance, electric capacity, inductance and micro-strip.
3. tunable multiple frequency section power amplifier as claimed in claim 1, it is characterised in that the i-th level input impedance
Matching network is a resistance, an inductance, an electric capacity or a microstrip line.
4. tunable multiple frequency section power amplifier as claimed in claim 1, it is characterised in that the i-th level input impedance
Matching network is the resistance and inductance of series connection, the resistance of series connection and electric capacity, the inductance of series connection and electric capacity, resistance and electricity in parallel
Sense, resistance in parallel and electric capacity are inductance and electric capacity in parallel.
5. tunable multiple frequency section power amplifier as claimed in claim 1, it is characterised in that the i-th level input impedance
Matching network is resistance, inductance and the electric capacity being sequentially connected in series or is resistance, inductance and electric capacity in parallel.
6. tunable multiple frequency section power amplifier as claimed in claim 1, it is characterised in that the i-th level output impedance
Matching network is any combination of resistance, electric capacity, inductance and micro-strip.
7. tunable multiple frequency section power amplifier as claimed in claim 1, it is characterised in that the i-th level output impedance
Matching network is a resistance, an inductance, an electric capacity or a microstrip line.
8. tunable multiple frequency section power amplifier as claimed in claim 1, it is characterised in that the i-th level output impedance
Matching network is the resistance and inductance of series connection, the resistance of series connection and electric capacity, the inductance of series connection and electric capacity, resistance and electricity in parallel
Sense, resistance in parallel and electric capacity are inductance and electric capacity in parallel.
9. tunable multiple frequency section power amplifier as claimed in claim 1, it is characterised in that the i-th level output impedance
Matching network is resistance, inductance and the electric capacity being sequentially connected in series or is resistance, inductance and electric capacity in parallel.
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Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108111153A (en) * | 2017-11-27 | 2018-06-01 | 海宁海微电子科技有限公司 | A kind of radio-frequency switch circuit |
| CN108173557A (en) * | 2018-03-01 | 2018-06-15 | 汽-大众汽车有限公司 | A kind of active matching network equipment |
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| CN108964695A (en) * | 2018-07-18 | 2018-12-07 | Oppo广东移动通信有限公司 | Radio circuit adjustment method and relevant apparatus |
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| CN109041096A (en) * | 2018-07-18 | 2018-12-18 | Oppo广东移动通信有限公司 | Radio frequency circuit simulated method and relevant apparatus |
| CN109860155A (en) * | 2018-12-12 | 2019-06-07 | 江苏博普电子科技有限责任公司 | A kind of GaN microwave power device comprising π type matching network |
| CN110266274A (en) * | 2018-03-12 | 2019-09-20 | 派赛公司 | Doherty amplifier with adjustable alpha factor |
| CN110971207A (en) * | 2019-11-19 | 2020-04-07 | 普联技术有限公司 | Impedance tuning device, antenna device and terminal |
| CN111147029A (en) * | 2020-01-22 | 2020-05-12 | 深圳飞骧科技有限公司 | Radio frequency power amplification device and radio frequency power amplification method for 5G-NR frequency band |
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| CN112469144A (en) * | 2020-11-23 | 2021-03-09 | 辽宁工程技术大学 | Reconfigurable four-band power amplifier based on mobile base station |
| CN112636011A (en) * | 2019-10-08 | 2021-04-09 | 川升股份有限公司 | Radio frequency assembly combination and antenna device |
| CN112787605A (en) * | 2020-12-31 | 2021-05-11 | 四川天巡半导体科技有限责任公司 | Power device based on integrated internal matching circuit and processing method thereof |
| CN113206644A (en) * | 2021-03-24 | 2021-08-03 | 电子科技大学 | High-efficiency distributed power amplifier with reconfigurable bandwidth |
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| CN113708783A (en) * | 2021-08-27 | 2021-11-26 | 福州昆硕宸信息科技有限公司 | Frequency-adjustable microwave signal source device |
| CN113726304A (en) * | 2021-08-30 | 2021-11-30 | 华中科技大学 | Zero-reflection network based on complex impedance matching |
| CN114337553A (en) * | 2021-12-16 | 2022-04-12 | 上海矽昌微电子有限公司 | Passive radio frequency switch circuit, radio frequency control system and control method thereof |
| CN114614771A (en) * | 2022-01-25 | 2022-06-10 | 电子科技大学 | Ultra-wideband radio frequency power amplifier based on frequency continuous adjustment |
| CN114928368A (en) * | 2022-01-07 | 2022-08-19 | 西安海云物联科技有限公司 | A matching circuit structure that is used for radio frequency impedance convergence of 5G frequency channel WIFI6 |
| WO2024055760A1 (en) * | 2022-09-16 | 2024-03-21 | 深圳飞骧科技股份有限公司 | Multi-band low-noise amplifier, integrated circuit chip and electronic device |
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| CN108111153A (en) * | 2017-11-27 | 2018-06-01 | 海宁海微电子科技有限公司 | A kind of radio-frequency switch circuit |
| CN108173557A (en) * | 2018-03-01 | 2018-06-15 | 汽-大众汽车有限公司 | A kind of active matching network equipment |
| CN108173557B (en) * | 2018-03-01 | 2023-09-26 | 一汽-大众汽车有限公司 | Active matching network device |
| CN108233886A (en) * | 2018-03-12 | 2018-06-29 | 锐石创芯（深圳）科技有限公司 | Wideband impedance matching module and the device for including it |
| CN110266274A (en) * | 2018-03-12 | 2019-09-20 | 派赛公司 | Doherty amplifier with adjustable alpha factor |
| CN108923868B (en) * | 2018-07-18 | 2021-04-09 | Oppo广东移动通信有限公司 | Radio frequency circuit debugging method and related device |
| CN108923868A (en) * | 2018-07-18 | 2018-11-30 | Oppo广东移动通信有限公司 | Radio circuit adjustment method and relevant apparatus |
| CN108964695A (en) * | 2018-07-18 | 2018-12-07 | Oppo广东移动通信有限公司 | Radio circuit adjustment method and relevant apparatus |
| CN109041096A (en) * | 2018-07-18 | 2018-12-18 | Oppo广东移动通信有限公司 | Radio frequency circuit simulated method and relevant apparatus |
| CN108964695B (en) * | 2018-07-18 | 2021-06-08 | Oppo广东移动通信有限公司 | Radio frequency circuit debugging method and related device |
| CN109041096B (en) * | 2018-07-18 | 2021-04-13 | Oppo广东移动通信有限公司 | Radio frequency circuit simulation method and related device |
| CN109039369A (en) * | 2018-08-16 | 2018-12-18 | Oppo（重庆）智能科技有限公司 | Radio circuit and electronic equipment |
| CN109860155A (en) * | 2018-12-12 | 2019-06-07 | 江苏博普电子科技有限责任公司 | A kind of GaN microwave power device comprising π type matching network |
| CN112636011A (en) * | 2019-10-08 | 2021-04-09 | 川升股份有限公司 | Radio frequency assembly combination and antenna device |
| CN110971207A (en) * | 2019-11-19 | 2020-04-07 | 普联技术有限公司 | Impedance tuning device, antenna device and terminal |
| CN110971207B (en) * | 2019-11-19 | 2023-11-24 | 普联技术有限公司 | Impedance tuning device, antenna device and terminal |
| CN111147029A (en) * | 2020-01-22 | 2020-05-12 | 深圳飞骧科技有限公司 | Radio frequency power amplification device and radio frequency power amplification method for 5G-NR frequency band |
| CN111147029B (en) * | 2020-01-22 | 2024-05-07 | 深圳飞骧科技股份有限公司 | Radio frequency power amplification device and radio frequency power amplification method for 5G-NR frequency band |
| CN112152648A (en) * | 2020-09-08 | 2020-12-29 | Oppo广东移动通信有限公司 | Radio frequency circuit, power adjusting method and communication terminal |
| CN112469144A (en) * | 2020-11-23 | 2021-03-09 | 辽宁工程技术大学 | Reconfigurable four-band power amplifier based on mobile base station |
| CN112469144B (en) * | 2020-11-23 | 2024-05-31 | 辽宁工程技术大学 | Reconfigurable four-band power amplifier based on mobile base station |
| CN112787605A (en) * | 2020-12-31 | 2021-05-11 | 四川天巡半导体科技有限责任公司 | Power device based on integrated internal matching circuit and processing method thereof |
| CN113206644B (en) * | 2021-03-24 | 2022-05-27 | 电子科技大学 | High-efficiency distributed power amplifier with reconfigurable bandwidth |
| CN113206644A (en) * | 2021-03-24 | 2021-08-03 | 电子科技大学 | High-efficiency distributed power amplifier with reconfigurable bandwidth |
| CN113285697A (en) * | 2021-05-31 | 2021-08-20 | 电子科技大学 | Matching reconfigurable ultra-wideband single-pole multi-throw radio frequency switch |
| CN113708783A (en) * | 2021-08-27 | 2021-11-26 | 福州昆硕宸信息科技有限公司 | Frequency-adjustable microwave signal source device |
| CN113726304A (en) * | 2021-08-30 | 2021-11-30 | 华中科技大学 | Zero-reflection network based on complex impedance matching |
| CN113726304B (en) * | 2021-08-30 | 2024-04-23 | 华中科技大学 | Zero reflection network based on complex impedance matching |
| CN114337553A (en) * | 2021-12-16 | 2022-04-12 | 上海矽昌微电子有限公司 | Passive radio frequency switch circuit, radio frequency control system and control method thereof |
| CN114337553B (en) * | 2021-12-16 | 2022-11-22 | 上海矽昌微电子有限公司 | Passive radio frequency switch circuit, radio frequency control system and control method thereof |
| CN114928368A (en) * | 2022-01-07 | 2022-08-19 | 西安海云物联科技有限公司 | A matching circuit structure that is used for radio frequency impedance convergence of 5G frequency channel WIFI6 |
| WO2024060900A1 (en) * | 2022-01-17 | 2024-03-28 | 深圳市晶准通信技术有限公司 | Impedance transformation network, radio frequency switch unit, single-pole multi-throw radio frequency switch, and chip |
| CN114614771A (en) * | 2022-01-25 | 2022-06-10 | 电子科技大学 | Ultra-wideband radio frequency power amplifier based on frequency continuous adjustment |
| WO2024055760A1 (en) * | 2022-09-16 | 2024-03-21 | 深圳飞骧科技股份有限公司 | Multi-band low-noise amplifier, integrated circuit chip and electronic device |
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Application publication date: 20171107 |