CN112787605A - Power device based on integrated internal matching circuit and processing method thereof - Google Patents
Power device based on integrated internal matching circuit and processing method thereof Download PDFInfo
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
Abstract
The invention discloses a power device based on an integrated internal matching circuit, which comprises an input internal matching network, a power tube and an output internal matching network, wherein the input internal matching network, the power tube and the output internal matching network are sequentially connected in series to form an electric path for transmitting a microwave signal to a load, and the input internal matching network and the output internal matching network are respectively connected with a microwave signal source and the load and are respectively used for matching input impedance so that the power tube obtains maximum excitation power from the microwave signal source. The first microwave frequency band input path and the second microwave frequency band input path are arranged in the input internal matching network, so that a double-frequency function can be effectively realized, the working bandwidth and the working frequency of the whole device are improved, the parasitic influence is reduced, and the input internal matching network, the power tube and the output internal matching network are printed and integrated, so that the size of the whole device is effectively reduced, the loss of transmission lines is reduced, and the output power is improved.
Description
Technical Field
The invention relates to the technical field of microwave devices, in particular to a power device based on an integrated internal matching circuit and a processing method thereof.
Background
The development of electronic equipment, communication systems and other fields requires that communication frequency bands are wider and smaller, and the size is smaller and smaller, and meanwhile, higher reliability is required. The power amplifier is one of important modules, and the realization of high frequency, broadband, miniaturization, high efficiency and higher power is of great importance to the whole system.
The continuous increase of device power requires that the total grid width of a tube core is larger and larger from several millimeters to more than 30 millimeters, and the tube core which is developed in China and is larger than 6 millimeters is provided. Because the input impedance of the chip is reduced along with the increase of the gate width, the no-load Q value of the device is very high, the problems of amplitude imbalance and phase imbalance of the feeding electric signal are more and more serious, and the direct use of an external circuit for matching in a certain bandwidth is very difficult, the input impedance and the output impedance of a tube core are generally improved by adopting an internal matching network, the influence of parasitic parameters is reduced, and the high-power output of the microwave power transistor is realized.
The main forms of the power device in the prior art are a monolithic microwave integrated circuit, an internal matching power tube and a power amplification module. The monolithic microwave integrated circuit has the advantages of small volume, high bandwidth, high consistency and the like, but the development cost is relatively high, and more importantly, the output power of the monolithic microwave integrated circuit is limited due to the limitation of assembly on the area of a chip, the large output matching loss of the circuit, the limited thinning of the thickness of the chip and the like. Because the matching circuit is manufactured on the ceramic substrate or the gallium arsenide substrate, compared with a monolithic microwave integrated circuit, the internal matching power amplifier has the advantages that the power loss is greatly reduced, the power additional efficiency of a device is improved, and the output power is improved.
Disclosure of Invention
The invention aims to provide a power device based on an integrated internal matching circuit, which aims to solve the technical problem that in the prior art, the bandwidth can only be narrow due to parasitic effect and is difficult to adapt to the requirement of broadband and efficient microwave amplification.
In order to solve the technical problems, the invention specifically provides the following technical scheme:
a power device based on an integrated internal matching circuit comprises an input internal matching network, a power tube and an output internal matching network, wherein the input internal matching network, the power tube and the output internal matching network are sequentially connected in series to form an electric passage for transmitting microwave signals to a load,
the input inner matching network and the output inner matching network are respectively connected with a microwave signal source and a load and are respectively used for matching input impedance so that the power tube obtains maximum excitation power from the microwave signal source and matching output impedance so that the load obtains maximum output power from the power tube.
As a preferable mode of the present invention, the input internal matching network includes a first input terminal, an input impedance matching circuit, and a first output terminal, one end of the first input terminal is connected to the microwave signal source, the other end of the first input terminal is connected to one end of the input impedance matching circuit, the other end of the input impedance matching circuit is connected to one end of the first output terminal, and the other end of the first output terminal is connected to a gate of the power transistor,
the input impedance matching circuit comprises a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, a sixth capacitor, a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line, a first resistor, a second resistor and a ground wire, wherein one end of the first microstrip line is respectively connected with the other end of the input end and one end of the first capacitor, the other end of the first microstrip line is respectively connected with one end of the second microstrip line, one end of the second capacitor and one end of the third capacitor, the other end of the second capacitor is respectively connected with one end of the fourth capacitor and one end of the third microstrip line, the other end of the third capacitor is respectively connected with one end of the fifth capacitor and one end of the fourth microstrip line, and the other end of the third microstrip line is respectively connected with the other end of the fourth microstrip line, one end of the second resistor and one end of the second microstrip line, One end part of the output end is connected, the other end part of the second resistor is respectively connected with one end part of the first resistor and one end part of the sixth capacitor, the other end part of the first resistor is provided with a third input end for a power tube grid bias power supply, and the ground wires of the other end parts of the first capacitor, the second microstrip line, the fourth capacitor, the fifth capacitor and the sixth capacitor are connected.
As a preferable mode of the present invention, the output internal matching network includes a second input terminal, an output impedance matching circuit, and a second output terminal, one end of the second input terminal is connected to the drain of the power transistor, the other end of the second input terminal is connected to one end of the output impedance matching circuit, the other end of the output impedance matching circuit is connected to one end of the second output terminal, and the other end of the second output terminal is connected to the load,
the output impedance matching circuit comprises a seventh capacitor, an eighth capacitor, a ninth capacitor, a tenth capacitor, a fifth microstrip line, a sixth microstrip line, a seventh microstrip line, an eighth microstrip line and a ground wire, wherein the other end of the second input end is respectively connected with one end of the fifth microstrip line and one end of the sixth microstrip line, the other end of the fifth microstrip line is connected with the seventh capacitor and is provided with a fourth input end for a power tube drain bias power supply, the other end of the sixth microstrip line is respectively connected with one end of the eighth capacitor and one end of the ninth capacitor, the other end of the ninth capacitor is respectively connected with one end of the eighth microstrip line and one end of the seventh microstrip line, the other end of the eighth capacitor is connected with one end of the second output end, and the seventh capacitor, the eighth capacitor, the ninth capacitor, the seventh capacitor, the eighth capacitor, the other ends of the tenth capacitor and the seventh microstrip line are connected with the ground wire.
As a preferable mode of the present invention, the source of the power transistor is connected to a ground line.
As a preferred embodiment of the present invention, the first capacitor, the first microstrip line, the second capacitor, the third microstrip line, the fourth capacitor, the second resistor, and the first resistor constitute a first microwave band input path for transmitting a first excitation power, the first capacitor, the first microstrip line, the second microstrip line, the third capacitor, the fourth microstrip line, the fifth capacitor, the second resistor, and the first resistor constitute a second microwave band input path for transmitting a second excitation power, and the first microwave band input path and the second microwave band input path independently transmit in the first microwave band and the second microwave band, respectively.
As a preferred aspect of the present invention, the present invention provides a processing method for a power device based on an integrated internal matching circuit, including the following steps:
step S1, generating an integrated printed circuit board according to the circuit schematic diagram of the input internal matching network, the power tube and the output internal matching network;
step S2, sequentially assembling the electrical elements in the input inner matching network, the power tube and the output inner matching network on an integrated printed circuit board;
and step S3, packaging the assembled integrated printed circuit board to obtain the power device based on the integrated internal matching circuit.
As a preferred embodiment of the present invention, in the integrated printed circuit board, the second capacitor, the third microstrip line, and the fourth capacitor are in a parallel symmetric structure with the third capacitor, the fourth microstrip line, and the fifth capacitor, so as to ensure structural consistency of the first microwave frequency band input path and the second microwave frequency band input path.
As a preferable aspect of the present invention, in step S2, the first capacitor, the second capacitor, the third capacitor, the fourth capacitor, the fifth capacitor, the sixth capacitor, the seventh capacitor, the eighth capacitor, the ninth capacitor, and the tenth capacitor used for assembly all adopt MOM capacitors, and the second resistor and the first resistor all adopt chip resistors.
As a preferable embodiment of the present invention, in step S3, the integrated printed circuit board is packaged such that a first input pin, a third input pin, a fourth input pin, a second output pin, and a ground pin are respectively left outside the first input terminal, the third input terminal, the fourth input terminal, the second output terminal, and the ground.
Compared with the prior art, the invention has the following beneficial effects:
the first microwave frequency band input path and the second microwave frequency band input path are arranged in the input internal matching network, so that a double-frequency function can be effectively realized, the working bandwidth and the working frequency of the whole device are improved, the parasitic influence is reduced, and the input internal matching network, the power tube and the output internal matching network are printed and integrated, so that the size of the whole device is effectively reduced, the loss of transmission lines is reduced, and the output power is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It should be apparent that the drawings in the following description are merely exemplary, and that other embodiments can be derived from the drawings provided by those of ordinary skill in the art without inventive effort.
Fig. 1 is a block diagram of a power device according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a power device according to an embodiment of the present invention;
FIG. 3 is a power device simulation power diagram provided by an embodiment of the invention;
fig. 4 is a diagram of simulation efficiency of a power device according to an embodiment of the present invention.
The reference numerals in the drawings denote the following, respectively:
1-input an internal matching network; 2-a power tube; 3-output internal matching network; 4-a third input; 5-a fourth input; 6-ground wire;
101-a first input; 102-an input impedance matching circuit; 103-a first output;
301-a second input; 302-output impedance matching circuit; 303 a second output terminal.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and 2, the present invention provides a power device based on an integrated internal matching circuit, which comprises an input internal matching network 1, a power tube 2 and an output internal matching network 3, wherein the input internal matching network 1, the power tube 2 and the output internal matching network 3 are sequentially connected in series to form an electrical path for transmitting microwave signals to a load,
the internal matching circuit is mainly used for impedance matching of the microwave transmission circuit, so that the aim of transmitting all high-frequency microwave signals to a load point is fulfilled, the reflection of the signals is reduced, and the energy benefit is improved. The internal resistance of the microwave signal source is equal to the characteristic impedance of the connected transmission circuit in magnitude and same in phase, or the characteristic impedance of the transmission circuit is equal to the characteristic impedance of the connected load in magnitude and same in phase, which means that the input end or the output end of the transmission circuit is in an impedance matching state, referred to as impedance matching for short; otherwise, it is called impedance mismatch. The input inner matching network 1 and the output inner matching network 3 are respectively connected with a microwave signal source and a load and are respectively used for matching input impedance so that the power tube 2 obtains maximum excitation power from the microwave signal source and matching output impedance so that the load obtains maximum output power from the power tube 2.
The input internal matching network 1 comprises a first input terminal 101, an input impedance matching circuit 102 and a first output terminal 103, wherein one end of the first input terminal 101 is connected with a microwave signal source, the other end is connected with one end of the input impedance matching circuit 102, the other end of the input impedance matching circuit 102 is connected with one end of the first output terminal 103, the other end of the first output terminal 103 is connected with a grid electrode of the power tube 2, wherein,
the input impedance matching circuit 102 includes a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a sixth capacitor C6, a first microstrip line L1, a second microstrip line L2, a third microstrip line L3, a fourth microstrip line L4, a first resistor R1, a second resistor R2, and a ground 6, one end of the first microstrip line L1 is connected to the other end of the input terminal and one end of the first capacitor C1, the other end of the first microstrip line L1 is connected to one end of the second microstrip line L2, one end of the second capacitor C2, and one end of the third capacitor C3, the other end of the second capacitor C2 is connected to one end of the fourth capacitor C4 and one end of the third microstrip line L3, the other end of the third capacitor C3 is connected to one end of the fifth capacitor C5 and one end of the fourth microstrip line L4, and the other end of the third microstrip line L3 is connected to the other end of the fourth capacitor L4, One end of the second resistor R2 and one end of the output end are connected, the other end of the second resistor R2 is connected with one end of the first resistor R1 and one end of the sixth capacitor C6, the other end of the first resistor R1 is provided with a third input end 4 for supplying a gate bias power supply to the power tube 2, and the ground lines 6 of the other ends of the first capacitor C1, the second microstrip line L2, the fourth capacitor C4, the fifth capacitor C5 and the sixth capacitor C6 are connected.
The output internal matching network 3 includes a second input terminal 301, an output impedance matching circuit 302 and a second output terminal 303, wherein one end of the second input terminal 301 is connected to the drain of the power transistor 2, the other end is connected to one end of the output impedance matching circuit 302, the other end of the output impedance matching circuit 302 is connected to one end of the second output terminal 303, the other end of the second output terminal 303 is connected to the load,
the output impedance matching circuit 302 includes a seventh capacitor C7, an eighth capacitor C8, a ninth capacitor C9, a tenth capacitor C10, a fifth microstrip line L5, a sixth microstrip line L6, a seventh microstrip line L7, an eighth microstrip line L8 and a ground line 6, wherein the other end of the second input terminal 301 is connected to one end of the fifth microstrip line L5 and one end of the sixth microstrip line L6, the other end of the fifth microstrip line L5 is connected to the seventh capacitor C7 and is provided with a fourth input terminal 5 for the drain bias power supply of the power transistor 2, the other end of the sixth microstrip line L6 is connected to one end of the eighth capacitor C8 and one end of the ninth capacitor C9, the other end of the ninth capacitor C9 is connected to one end of the eighth microstrip line L8 and one end of the seventh microstrip line L7, the other end of the eighth capacitor C8 is connected to one end of the second output terminal 303, and the seventh capacitor C7 and the eighth capacitor C8, The other ends of the tenth capacitor C10 and the seventh microstrip line L7 are connected to the ground line 6.
The effect of the first microstrip line L1 to the eighth microstrip line L8 in the circuit is consistent with that of the inductor, and the transmission loss of the microwave signal in the input impedance matching circuit 102 and the output impedance matching circuit 302 can be further reduced by using the advantages of fast transmission speed and low loss of the microstrip lines, so as to obtain the maximum transmission efficiency at the load and reduce the parasitic influence.
The source of the power transistor 2 is connected to ground 6.
The first capacitor C1, the first microstrip line L1, the second microstrip line L2, the second capacitor C2, the third microstrip line L3, the fourth capacitor C4, the second resistor R2 and the first resistor R1 form a first microwave band input path for transmitting first excitation power, the first capacitor C1, the first microstrip line L1, the second microstrip line L2, the third capacitor C3, the fourth microstrip line L4, the fifth capacitor C5, the second resistor R2 and the first resistor R1 form a second microwave band input path for transmitting second excitation power, and the first microwave band input path and the second microwave band input path independently transmit in the first microwave band and the second microwave band, respectively.
In practical use, when the input impedance matching circuit 102 is in the first microwave frequency band, the second capacitor C2 and the third microstrip line L3 are in the on state, the third capacitor C3 and the fourth microstrip line L4 are in the open state, at this time, the first microwave frequency band input path independently realizes the optimal transmission function of the first microwave frequency band in transmission with the first excitation power, when the input impedance matching circuit 102 is in the first microwave frequency band, the third capacitor C3 and the fourth microstrip line L4 are in the on state, the second capacitor C2 and the third microstrip line L3 are in the open state, at this time, the second microwave frequency band input path independently realizes the optimal transmission function of the second microwave frequency band in transmission with the second excitation power, the isolation between the first microwave frequency band transmission and the second microwave frequency band transmission can be effectively realized, mutual interference is avoided, the transmission performance of the whole device is affected, and meanwhile, the wider working bandwidth is obtained by adding the first microwave frequency band transmission and the second microwave frequency band transmission, Higher operating frequencies.
The invention provides a processing method of a power device based on an integrated internal matching circuit, which comprises the following steps:
step S1, generating an integrated printed circuit board according to the circuit schematic diagram of the input internal matching network 1, the power tube 2 and the output internal matching network 3;
step S2, sequentially assembling the electrical elements in the input inner matching network 1, the power tube 2 and the output inner matching network 3 on the integrated printed circuit board;
and step S3, packaging the integrated printed circuit board which is completed by assembly to obtain the power device based on the integrated internal matching circuit.
In the integrated printed circuit board, the second capacitor C2, the third microstrip line L3, the fourth capacitor C4, the third capacitor C3, the fourth microstrip line L4, and the fifth capacitor C5 are in a parallel symmetrical structure to ensure structural consistency of the first microwave frequency band input path and the second microwave frequency band input path.
In step S2, the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5, the sixth capacitor C6, the seventh capacitor C7, the eighth capacitor C8, the ninth capacitor C9, and the tenth capacitor C10 used for assembly all adopt MOM capacitors, and the second resistor R2 and the first resistor R1 all adopt chip resistors.
By utilizing the advantages of small parasitic capacitance of the MOM capacitor, no Mask and no polarization during installation, the assembly area and the assembly difficulty can be effectively reduced, the processing and the production are more facilitated, and meanwhile, the parasitic influence of the whole device is further reduced due to small parasitic capacitance.
In step S3, the package-integrated printed circuit board leaves a first input pin, a third input pin, a fourth input pin, a second output pin, and a ground pin outside the first input terminal 101, the third input terminal 4, the fourth input terminal 5, the second output terminal 303, and the ground wire 6, respectively.
The first input pin, the third input pin, the fourth input pin, the second output pin and the ground wire pin are respectively used for being connected with an external microwave signal source, a grid bias power supply, a drain bias power supply, a load and a ground wire 6.
As shown in FIGS. 3 and 4, this embodiment operates at drain voltage VDThe test result of the output power characteristic under the condition of 36V can be seen from the figure, the values of the output power and the efficiency of the output power in the frequency range of 2.0 GHz-4.0 GHz, wherein the isolation requirements of the first microwave frequency band input path and the second microwave frequency band input path are met from the output power, and the sum of the first microwave frequency band and the second microwave frequency band in the first microwave frequency band input path and the second microwave frequency band input path can beThe working bandwidth is expanded to 2.0 GHz-4.0 GHz, and the efficiency of the output power can obtain a higher value, thereby realizing the purpose of improving the output power.
The first microwave frequency band input path and the second microwave frequency band input path are arranged in the input internal matching network 1, so that a double-frequency function can be effectively realized, the working bandwidth and the working frequency of the whole device are improved, the parasitic influence is reduced, and the input internal matching network 1, the power tube 2 and the output internal matching network 3 adopt a printing integration processing method, so that the size of the whole device is effectively reduced, the transmission line loss is reduced, and the output power is improved.
The above embodiments are only exemplary embodiments of the present application, and are not intended to limit the present application, and the protection scope of the present application is defined by the claims. Various modifications and equivalents may be made by those skilled in the art within the spirit and scope of the present application and such modifications and equivalents should also be considered to be within the scope of the present application.
Claims (9)
1. A power device based on an integrated internal matching circuit is characterized in that: comprises an input inner matching network (1), a power tube (2) and an output inner matching network (3), wherein the input inner matching network (1), the power tube (2) and the output inner matching network (3) are sequentially connected in series to form an electric path for transmitting microwave signals to a load, wherein,
the input inner matching network (1) and the output inner matching network (3) are respectively connected with a microwave signal source and a load and are respectively used for matching input impedance so that the power tube (2) obtains maximum excitation power from the microwave signal source and matching output impedance so that the load obtains maximum output power from the power tube (2).
2. The integrated internal matching circuit-based power device according to claim 1, wherein: the input inner matching network (1) comprises a first input end (101), an input impedance matching circuit (102) and a first output end (103), one end part of the first input end (101) is connected with the microwave signal source, the other end part of the first input end is connected with one end part of the input impedance matching circuit (102), the other end part of the input impedance matching circuit (102) is connected with one end part of the first output end (103), the other end part of the first output end (103) is connected with the grid electrode of the power tube (2), wherein,
the input impedance matching circuit (102) comprises a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a sixth capacitor C6, a first microstrip line L1, a second microstrip line L2, a third microstrip line L3, a fourth microstrip line L4, a first resistor R1, a second resistor R2 and a ground wire (6), one end of the first microstrip line L1 is respectively connected with the other end of an input end and one end of a first capacitor C1, the other end of the first microstrip line L1 is respectively connected with one end of the second microstrip line L2, one end of a second capacitor C2 and one end of a third capacitor C3, the other end of the second capacitor C2 is respectively connected with one end of the fourth capacitor C4 and one end of a third microstrip line L3, the other end of the third capacitor C3 is respectively connected with one end of the fifth capacitor C5 and one end of the fourth microstrip line L4, the other end of the third microstrip line L3 is connected to the other end of the fourth microstrip line L4, the one end of the second resistor R2 and the one end of the output end, the other end of the second resistor R2 is connected to the one end of the first resistor R1 and the one end of the sixth capacitor C6, the other end of the first resistor R1 is provided with a third input end (4) for a gate bias power supply of the power tube (2), and the ground lines (6) of the other ends of the first capacitor C1, the second microstrip line L2, the fourth capacitor C4, the fifth capacitor C5 and the sixth capacitor C6 are connected.
3. The integrated internal matching circuit-based power device according to claim 2, wherein: the output inner matching network (3) comprises a second input end (301), an output impedance matching circuit (302) and a second output end (303), one end of the second input end (301) is connected with the drain of the power tube (2), the other end of the second input end is connected with one end of the output impedance matching circuit (302), the other end of the output impedance matching circuit (302) is connected with one end of the second output end (303), the other end of the second output end (303) is connected with the load, wherein,
the output impedance matching circuit (302) comprises a seventh capacitor C7, an eighth capacitor C8, a ninth capacitor C9, a tenth capacitor C10, a fifth microstrip line L5, a sixth microstrip line L6, a seventh microstrip line L7, an eighth microstrip line L8 and a ground wire (6), the other end of the second input end (301) is respectively connected with one end of the fifth microstrip line L5 and one end of the sixth microstrip line L6, the other end of the fifth microstrip line L5 is connected with the seventh capacitor C7 and is provided with a fourth input end (5) for power tube (2) drain bias power supply, the other end of the sixth microstrip line L6 is respectively connected with one end of the eighth capacitor C8 and one end of the ninth capacitor C9, the other end of the ninth capacitor C9 is respectively connected with one end of the eighth L8 and one end of the seventh microstrip line L7, and the other end of the eighth capacitor C8 is connected with the other end of the second output end (303), the other ends of the seventh capacitor C7, the eighth capacitor C8, the tenth capacitor C10 and the seventh microstrip line L7 are connected to the ground (6).
4. The integrated internal matching circuit-based power device according to claim 3, wherein: and the source electrode of the power tube (2) is connected with the ground wire (6).
5. The integrated internal matching circuit-based power device according to claim 4, wherein: the first capacitor C1, the first microstrip line L1, the second microstrip line L2, the second capacitor C2, the third microstrip line L3, the fourth capacitor C4, the second resistor R2 and the first resistor R1 constitute a first microwave band input path for transmission of first excitation power, the first capacitor C1, the first microstrip line L1, the second microstrip line L2, the third capacitor C3, the fourth microstrip line L4, the fifth capacitor C5, the second resistor R2 and the first resistor R1 constitute a second microwave band input path for transmission of second excitation power, and the first microwave band input path and the second microwave band input path are independently transmitted in the first microwave band and the second microwave band, respectively.
6. A processing method of the power device based on the integrated internal matching circuit is characterized by comprising the following steps:
step S1, generating an integrated printed circuit board according to the circuit schematic diagram of the input internal matching network (1), the power tube (2) and the output internal matching network (3);
step S2, sequentially assembling the electrical elements in the input inner matching network (1), the power tube (2) and the output inner matching network (3) on an integrated printed circuit board;
and step S3, packaging the assembled integrated printed circuit board to obtain the power device based on the integrated internal matching circuit.
7. The method as claimed in claim 6, wherein the second capacitor C2, the third microstrip line L3, and the fourth capacitor C4 are parallel and symmetrical to the third capacitor C3, the fourth microstrip line L4, and the fifth capacitor C5 in the integrated printed circuit board to ensure the structural consistency of the first microwave band input path and the second microwave band input path.
8. The manufacturing method of claim 7, wherein in the step S2, the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5, the sixth capacitor C6, the seventh capacitor C7, the eighth capacitor C8, the ninth capacitor C9, and the tenth capacitor C10 used for assembly all adopt MOM capacitors, and the second resistor R2 and the first resistor R1 all adopt chip resistors.
9. The manufacturing method of claim 8, wherein in step S3, the integrated printed circuit board is packaged to leave a first input pin, a third input pin, a fourth input pin, a second output pin and a ground pin outside the first input terminal (101), the third input terminal (4), the fourth input terminal (5), the second output terminal (303) and the ground wire (6), respectively.
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| CN113708783A (en) * | 2021-08-27 | 2021-11-26 | 福州昆硕宸信息科技有限公司 | Frequency-adjustable microwave signal source device |
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| CN113708783A (en) * | 2021-08-27 | 2021-11-26 | 福州昆硕宸信息科技有限公司 | Frequency-adjustable microwave signal source device |
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Application publication date: 20210511 |