CN107332525A - A kind of superelevation PSRR power amplification device - Google Patents
A kind of superelevation PSRR power amplification device Download PDFInfo
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- CN107332525A CN107332525A CN201710653755.5A CN201710653755A CN107332525A CN 107332525 A CN107332525 A CN 107332525A CN 201710653755 A CN201710653755 A CN 201710653755A CN 107332525 A CN107332525 A CN 107332525A
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- switch
- low pass
- electric capacity
- pass circuit
- resistance
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- 230000003321 amplification Effects 0.000 title claims abstract description 25
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 25
- 230000005611 electricity Effects 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 abstract description 11
- 238000010276 construction Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/303—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters using a switching device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
Abstract
The present invention provides a kind of superelevation PSRR power amplification device, including amplifier, reference voltage circuit and low pass circuit, and the reference voltage circuit connects the low pass circuit, and the low pass circuit connects the input of the amplifier;Wherein, the reference voltage circuit includes first resistor and second resistance, and the first end connection power supply of the first resistor, the second end of the first resistor connects the first end of second resistance, the first end of the second resistance connects the low pass circuit, the second end ground connection of the second resistance;The low pass circuit includes first switch, second switch and electric capacity, the first end of the first switch connects the first end of the second resistance, second end of first switch connects the first end of the electric capacity and the first end of second switch, second end of the second switch connects the amplifier, the sequential that the second end ground connection of the electric capacity, the first switch and second switch periodically open and close and first switch and second switch are opened and closed is opposite.The superelevation PSRR power amplification device that the present invention is provided can reach high PSRR without external capacitor, and simple in construction, cost is low.
Description
Technical field
The present invention relates to electronic circuit technology field, more particularly to a kind of superelevation PSRR power amplification device.
Background technology
In the circuit of power amplifier, audio input is after amplifiers at different levels amplification, by amplification result and triangular wave
It is compared, the square wave input drive circuit that comparator is produced starts loudspeaker.Audio signal meeting in this transmitting procedure
Total harmonic distortion is produced, and can also be influenceed by power supply ripple.The method for suppressing noise and reduction total harmonic distortion now is main
It is the accurate circuit of design and increases big filter capacitor, so as to improves the PSRR (PSRR) of chip and reduce total harmonic wave
Distortion.
In the prior art, in order to reach that the high PSRR of comparison (PSRR) can typically be reached using complete differential framework
Arrive, and under complete differential framework, the sources of PSRR mainly are for producing differential amplifier VDD/2 mu balanced circuit.It please join
Read Fig. 1, in the prior art typically can plug-in filter capacitor C reach high PSRR effect.But plug-in filter capacitor is needed
The chip and big operating current of large area are wanted, cost is high, difficult design;And also due to signal in such circuit
Technique mismatch in transmitting procedure, the ripple voltage of power supply, substrate bias effect and circuit other ghost effects, can still be produced
Certain noise and total harmonic distortion, these noises and total harmonic distortion amount pass through operational amplifier, comparator and drive circuit
It can be exaggerated, relatively large noise and total harmonic distortion are also still had on loudspeaker.
Published Chinese patent CN102694514A provides a kind of power amplification device, further by output common-mode voltage
There is provided power amplification device overall PSRR, common-mode voltage generation unit includes 3rd resistor and the 4th resistance.But, its common-mode voltage
Generation unit is also required to external filter capacitor to suppress noise and reduce total harmonic distortion, external capacitor to design cost and
The problem of chip layout area etc. is all one very big, actual use inconvenience.
The content of the invention
For problem above, patent purpose of the present invention is to devise a kind of superelevation PSRR power amplification device, without
External capacitor is that can reach high PSRR, and simple in construction, cost is low.
Specific technical scheme of the invention is as follows:
A kind of superelevation PSRR power amplification device, including amplifier, reference voltage circuit and low pass circuit, the benchmark
Potential circuit connects the low pass circuit, and the low pass circuit connects the input of the amplifier;Wherein,
The reference voltage circuit includes first resistor R1 and second resistance R2, the first resistor R1 first end connection
Power supply, the second end connection second resistance R2 of first resistor R1 first end, the first end connection of the second resistance R2
The low pass circuit, the second end ground connection of the second resistance R2;
The low pass circuit includes first switch S1, second switch S2 and electric capacity Cs, the first end of the first switch S1
The first end of the second resistance R2 is connected, first switch S1 the second end connects the first end and second switch of the electric capacity Cs
S2 first end, the second end of the second switch S2 connects the amplifier, the second end ground connection of the electric capacity Cs, and described the
One switch S1 and second switch S2 periodically open and close and first switch S1 and second switch S2 is opened and closed
The sequential closed is opposite.
Specifically, low pass circuit of the present invention is N level frameworks, N >=1;Wherein:
As N=1, the low pass circuit includes first switch S1, second switch S2 and electric capacity Cs, the first switch S1
First end connect the first end of the second resistance R2, first switch S1 the second end connect the electric capacity Cs first end and
Second switch S2 first end, the second end of the second switch S2 connects the amplifier;
As N=2, the low pass circuit includes first switch S1, second switch S2, the 3rd switch S3 and the first electric capacity
Cs1, the second electric capacity Cs2, the second switch S2 the second end connect the second electric capacity Cs2 first end and the 3rd switch first
End;
When the low pass circuit for N level frameworks, including N+1 switch and N number of electric capacity, the second end connection of n-th switch
The first end of the first end of n-th electric capacity and the N+1 switch.
Specifically, the present invention when for two level frameworks low pass circuit, during N=2, the first switch S1, second switch S2,
3rd switch S3 is periodically opened and closed, and the sequential phase that first switch S1 and second switch S2 is opened and closed
Instead, the sequential that the switches of second switch S2 and the 3rd S3 is opened and closed is opposite;
When the low pass circuit for N level frameworks, the N+1 switch is periodically opened and closed, and per phase
The adjacent sequential opened and closed is opposite.
Specifically, the calculation formula of the equivalent resistance of low pass circuit of the present invention is:
Wherein, CsFor electric capacity Cs capacitance, fCKThe frequency opened and closed for first switch S1, second switch S2.
The present invention provides superelevation PSRR power amplification device compared with prior art, is that can reach height without external capacitor
PSRR, one group of dummy resistor is produced by low pass circuit, can be so that the electric capacity of uF grades be dwindled into pF etc. on equivalent
Level, and then plug-in capacitor traditionally can be made into chip internal, again may be used while application can above save chip space
To reach the effect of high PSRR.
Brief description of the drawings
Embodiments of the present invention is further illustrated referring to the drawings, wherein:
Fig. 1 be the present invention be prior art power amplifier structure chart
Fig. 2 is a kind of schematic diagram of superelevation PSRR power amplification device of the invention;
Fig. 3 is a kind of circuit structure diagram of superelevation PSRR power amplification device of the invention;
Fig. 4 is basic ohmer nomogram;
Fig. 5 is a kind of basic ohmer nomogram of low pass circuit of superelevation PSRR power amplification device of the invention;
Fig. 6 is a kind of circuit diagram of the low pass circuit one-level of superelevation PSRR power amplification device of the invention;
Fig. 7 is a kind of circuit diagram of two grades of the low pass circuit of superelevation PSRR power amplification device of the invention;
Fig. 8 is a kind of switching sequence figure of the low pass circuit one-level of superelevation PSRR power amplification device of the invention;
Fig. 9 is a kind of switching sequence figure of the low pass circuit one-level of superelevation PSRR power amplification device of the invention.
Embodiment
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings.
Power amplifier in application it is upper be typically all using it is complete it is differential by the way of, referring to Fig. 1, and entirely differential framework in order to
Two end direct current outputs are controlled to the reference voltage in VDD/2, it will usually produced with two resistance identical resistance through VDD
VDD/2 voltage is used as the reference voltage of power amplifier.Because of complete differential circuit in itself to the inhibition of power supply noise very
It is good, so resistor voltage divider circuit of the main source of traditional complete its power supply noise of differential architecture for generation VDD/2.Typically passing
The power amplifier of system is in order to reach the purpose of high PSRR, and the electric capacity C of the plug-in uF magnitude of meeting comes to the noise on VDD
The effect for making to filter reaches that high power supply presses down the effect of ratio with this, and external capacitor cost is high, chip difficult design.
The schematic diagram for the superelevation PSRR power amplification device that Fig. 2 provides for the present invention is referred to, by designing low pass electricity
Road produces one group of dummy resistor, can be so that the electric capacity of uF magnitudes dwindled into pF magnitudes on equivalent, and then by plug-in electricity traditionally
It is installed with and counts into chip internal.A plug-in capacitor can be above saved in application simultaneously and can reach the effect of high PSRR
Really.
The present invention proposes a kind of superelevation PSRR power amplification device, referring to Fig. 3, including amplifier, reference voltage
Circuit and low pass circuit, the reference voltage circuit connect the low pass circuit, and the low pass circuit connects the amplifier
Input.VDD/2 place is come out plus one group of low pass circuit in electric resistance partial pressure, it is therefore an objective to for being filtered to the noise on VDD
Ripple is to reach the purpose of high PSRR.Referring to Fig. 3, because one group of resistance R and one group of electric capacity C can produce a limit,
Its frequency is 1/RC, that is, when the noise on VDD is more than the frequency of limit, its noise will be filtered and then produce one group
Clean VCM voltages are supplied to power amplifier.
Specifically, the reference voltage circuit includes the of first resistor R1 and second resistance R2, the first resistor R1
One end connects power supply, the second end connection second resistance R2 of first resistor R1 first end, and the of the second resistance R2
One end connects the low pass circuit, the second end ground connection of the second resistance R2;
The low pass circuit includes first switch S1, second switch S2 and electric capacity Cs, the first end of the first switch S1
The first end of the second resistance R2 is connected, first switch S1 the second end connects the first end and second switch of the electric capacity Cs
S2 first end, the second end of the second switch S2 connects the amplifier, the second end ground connection of the electric capacity Cs, and described the
One switch S1 and second switch S2 periodically open and close and first switch S1 and second switch S2 is opened and closed
The sequential closed is opposite.
Fig. 4 is referred to for basic resistance calculations formula figure, resistance value R is equal to two terminal voltage VA-VB divided by flows through electric current I.
Refer to the basic resistance calculations formula figure that Fig. 5 is low pass circuit, electric capacity Cs through switch S1 and S2 with VA and VB connections, and S1
And the frequency of S2 switches is fCK, that is, it is that VA links together with Cs when S1 is opened, now S2 is to close Cs to disconnect with VB.Together
Should S1 disconnect when, S2 links together Cs and VB.It is possible thereby to derive that from the VA equivalent currents for flowing to VB be CsfCK
(VA-VB), and then the equivalent resistance for obtaining this dummy resistor can be gone to beWherein, CsFor electric capacity Cs capacitance,
fCKThe frequency opened and closed for first switch S1, second switch S2.
Specifically, low pass circuit of the present invention is N level frameworks, N >=1.Wherein:
As N=1, the low pass circuit includes first switch S1, second switch S2 and electric capacity Cs, the first switch S1
First end connect the first end of the second resistance R2, first switch S1 the second end connect the electric capacity Cs first end and
Second switch S2 first end, the second end of the second switch S2 connects the amplifier.
The circuit diagram that Fig. 6 is low pass circuit one-level is referred to, Fig. 7 is the circuit of two grades of low pass circuit.If typically to reach
To higher equivalent resistance, it would be desirable to relatively low frequency and less Cs capacitances, but frequency relatively low in practical application
And less capacitance, it can cause that electric charge on Cs is easily interfered and Cs dead resistances over the ground itself cause the effect of dummy resistor
Have a greatly reduced quality.In order to avoid it is above-mentioned the problem of, it is possible to use the framework of multistage dummy resistor is solved, two grades of Fig. 7 low pass circuits
Exactly avoided using the Cs electric capacity of two using too low frequency and too small CS electric capacity, to reach using upper demand.
As N=2, the low pass circuit includes first switch S1, second switch S2, the 3rd switch S3 and the first electric capacity
Cs1, the second electric capacity Cs2, the second switch S2 the second end connect the second electric capacity Cs2 first end and the 3rd switch first
End;
When the low pass circuit for N level frameworks, including N+1 switch and N number of electric capacity, the second end connection of n-th switch
The first end of the first end of n-th electric capacity and the N+1 switch.
Specifically, the present invention when for two level frameworks low pass circuit, during N=2, the first switch S1, second switch S2,
3rd switch S3 is periodically opened and closed, and the sequential phase that first switch S1 and second switch S2 is opened and closed
Instead, the sequential that the switches of second switch S2 and the 3rd S3 is opened and closed is opposite;
When the low pass circuit for N level frameworks, the N+1 switch is periodically opened and closed, and per phase
The adjacent sequential opened and closed is opposite.
The switching sequence figure that Fig. 8 is low pass circuit one-level is referred to, Fig. 9 is the switching sequence figure of two grades of low pass circuit.
Inside one level framework, S1 and S2 switching sequences are opposite, as shown in figure 8, S2 is closes namely when S1 is opened, together
S2 when S1 is to close of sample is to open.And inside two level frameworks, S1 and S2 sequential be it is anti-phase and S1 and S3 are same phase,
For S2 when opening it is to close simultaneously that S3 is opens as S1, and S2 is opens and S3 is pass simultaneously when S1 is to close.
The embodiment of present invention described above, is not intended to limit the scope of the present invention..Any basis
Various other corresponding changes and deformation that the technical concept of the present invention is made, should be included in the guarantor of the claims in the present invention
In the range of shield.
Claims (4)
1. a kind of superelevation PSRR power amplification device, it is characterised in that including amplifier, reference voltage circuit and low pass electricity
Road, the reference voltage circuit connects the low pass circuit, and the low pass circuit connects the input of the amplifier;Wherein,
The reference voltage circuit includes first resistor R1 and second resistance R2, the first resistor R1 first end connection electricity
Source, the second end connection second resistance R2 of first resistor R1 first end, the first end connection institute of the second resistance R2
State low pass circuit, the second end ground connection of the second resistance R2;
The low pass circuit includes first switch S1, second switch S2 and electric capacity Cs, the first switch S1 first end connection
The first end of the second resistance R2, first switch S1 the second end connects the first end and second switch S2 of the electric capacity Cs
First end, the second end of the second switch S2 connects the amplifier, and the second end of the electric capacity Cs is grounded, and described first opens
Close that S1 and second switch S2 periodically open and close and first switch S1 and second switch S2 is opened and closed
Sequential is opposite.
2. a kind of superelevation PSRR power amplification device according to claim 1, it is characterised in that the low pass circuit is
N level frameworks, N >=1;Wherein:
As N=1, the low pass circuit includes the of first switch S1, second switch S2 and electric capacity Cs, the first switch S1
One end connects the first end of the second resistance R2, and first switch S1 the second end connects the first end and second of the electric capacity Cs
S2 first end is switched, the second end of the second switch S2 connects the amplifier;
As N=2, the low pass circuit includes first switch S1, second switch S2, the 3rd switch S3 and the first electric capacity Cs1, the
Two electric capacity Cs2, the second switch S2 the second end connects the second electric capacity Cs2 first end and the first end of the 3rd switch;
When the low pass circuit for N level frameworks, including N+1 switch and N number of electric capacity, the second end connection n-th of n-th switch
The first end of the first end of electric capacity and the N+1 switch.
3. a kind of superelevation PSRR power amplification device according to claim 2, it is characterised in that when for two level frameworks
Low pass circuit, during N=2, the first switch S1, second switch S2, the 3rd switch S3 are periodically opened and closed, and
And the sequential that first switch S1 and second switch S2 is opened and closed is on the contrary, the switches of second switch S2 and the 3rd S3 is opened and closed
Sequential it is opposite;
When the low pass circuit for N level frameworks, the N+1 switch is periodically opened and closed, and per adjacent
The sequential opened and closed is opposite.
4. a kind of superelevation PSRR power amplification device according to claim 1, it is characterised in that the low pass circuit
The calculation formula of equivalent resistance is:
Wherein, CsFor electric capacity Cs capacitance, fCKThe frequency opened and closed for first switch S1, second switch S2.
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CN201710653755.5A CN107332525A (en) | 2017-08-01 | 2017-08-01 | A kind of superelevation PSRR power amplification device |
PCT/CN2018/075517 WO2019024478A1 (en) | 2017-08-01 | 2018-02-07 | Amplifier device having ultrahigh power supply rejection ratio |
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CN201710653755.5A CN107332525A (en) | 2017-08-01 | 2017-08-01 | A kind of superelevation PSRR power amplification device |
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CN201710653755.5A Pending CN107332525A (en) | 2017-08-01 | 2017-08-01 | A kind of superelevation PSRR power amplification device |
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Cited By (1)
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WO2019024478A1 (en) * | 2017-08-01 | 2019-02-07 | 深圳市中移联半导体科技有限公司 | Amplifier device having ultrahigh power supply rejection ratio |
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