CN103207636B - A kind of for providing the circuit of low-noise band-gap reference voltage source - Google Patents
A kind of for providing the circuit of low-noise band-gap reference voltage source Download PDFInfo
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- CN103207636B CN103207636B CN201210013734.4A CN201210013734A CN103207636B CN 103207636 B CN103207636 B CN 103207636B CN 201210013734 A CN201210013734 A CN 201210013734A CN 103207636 B CN103207636 B CN 103207636B
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Abstract
The invention provides a kind of for providing the circuit of bandgap voltage reference, bandgap voltage reference provides the electric current of multichannel slightly temperature coefficient, and the temperature coefficient of electric current offsets the temperature coefficient of the resistance adopted in reference voltage source just.The bandgap voltage reference of zero-temperature coefficient is produced by current flowing resistance, the low-pass filter that a cutoff frequency is very low is connect after bandgap voltage reference, the noise filtering of bandgap voltage reference, thus provide different electric current for modules different in RF chip in SIM cards of mobile phones.
Description
Technical field
The present invention relates to bandgap voltage reference field, particularly a kind of low-noise band-gap reference voltage source.
Background technology
Need in radio frequency chip to provide a low-noise band-gap reference voltage source to radio frequency module, and disturb low-noise band-gap reference voltage source when not allowing modules to work, traditional way is at the plug-in bulky capacitor of the output of bandgap voltage reference.By bulky capacitor, filtering is carried out to bandgap voltage reference.
But, adopt general plug-in bulky capacitor to carry out filtering to bandgap voltage reference and there is following problem:
(1) need to increase a bulky capacitor outward at chip, add the cost of an electric capacity expense to whole scheme, need the area increasing an electric capacity on printing board PCB (Printedcircuitboard) plate.External capacitor needs the many chip pins of chip simultaneously, adds a binding line cost like this to chip.
(2) owing to needing the RF module using low-noise band-gap reference voltage source a lot of in RF chip, but bandgap voltage reference can only the outer electric capacity of a plug-in sheet, needs the RF module using low-noise band-gap reference voltage source must share a low-noise band-gap reference voltage source so all.
(3) bandgap voltage reference plug-in capacitor problem that bandgap voltage reference start-up time can be brought long, this can bring the expense of whole system start-up time.
Summary of the invention
Embodiments provide a kind of low-noise band-gap reference voltage source.
Embodiments providing a kind of for providing the circuit of bandgap voltage reference, comprising current-type band gap reference voltage source, the first resistance, low-pass filter;
Described current-type band gap reference voltage source is for exporting the electric current of band temperature coefficient;
Described first resistance one end connects the output terminal of described current-type band gap reference voltage source, other end ground connection, and it is the bandgap voltage reference of zero-temperature coefficient that described first resistance is used for the current conversion of described band temperature coefficient;
Described low-pass filter is used for the bandgap voltage reference of described zero-temperature coefficient being converted into low noise bandgap references voltage and exports.
Above-mentioned circuit also comprises, and described low-pass filter comprises the first PMOS, the second PMOS, the first electric capacity;
Described first PMOS source electrode is connected with the ungrounded end of described first resistance, and drain electrode is connected with described low-pass filter output terminal, Substrate ground;
Described second PMOS source electrode is connected with the ungrounded end of described first resistance, drain electrode is connected with described low-pass filter output terminal, described second PMOS is opened when described current-type band gap reference voltage source starts, and closes after described current-type band gap reference voltage source starts;
Described first electric capacity one end is connected with described low-pass filter output terminal, other end ground connection.
Above-mentioned circuit also comprises, fast start circuit, and described fast start circuit is used for the outside enable signal of described current-type band gap reference voltage source to be converted into the substrate that quick enabling signal exports described second PMOS to.
Above-mentioned circuit also comprises, and described fast start circuit comprises the first not gate, the second not gate, the 3rd not gate, the 4th not gate, the second resistance, the second electric capacity, rejection gate;
Described first not gate, the second not gate connect successively;
Described second resistance one end connects described second non-gate output terminal, and one end connects described 3rd not gate input end;
Described second electric capacity one end connects described 3rd not gate input end, one end ground connection;
Described 3rd not gate, the 4th not gate connect successively;
The input end of described rejection gate connects the output terminal of described first not gate, the output terminal of described 4th not gate respectively, and described rejection gate exports described quick enabling signal.
Above-mentioned circuit also comprises, described current-type band gap reference voltage source comprises the first triode (214), second triode (215), 3rd resistance (201), 4th resistance (205), 5th resistance (206), operational amplifier (207), the 3rd PMOS (208), 4th PMOS (209), 5th PMOS (210), the 6th PMOS (211), the 7th PMOS (214), 8th PMOS (215), first NMOS tube, the second NMOS tube, at least one exports branch road;
Described 3rd PMOS, the 5th PMOS grid are all connected with described operational amplifier output terminal, the equal input service voltage of source electrode;
Described 4th PMOS source electrode drains with described 3rd PMOS and is connected, and grid is connected with described 6th PMOS grid, drains to be connected with described operational amplifier negative input;
Described 6th PMOS source electrode drains with described 5th PMOS and is connected, and drains to be connected with described operational amplifier positive input;
Described first transistor emitter is connected with described operational amplifier negative input, base stage, grounded collector;
Described second transistor emitter is connected with described operational amplifier positive input by described 3rd resistance, base stage, grounded collector;
The area of described first triode and the area ratio of described second triode are 1:n, n is positive integer;
Described 4th resistance one end connects described operational amplifier negative input, other end ground connection;
Described 5th resistance one end connects described operational amplifier positive input, other end ground connection;
Described 7th PMOS grid connects described 5th PMOS grid, described output branch input, source electrode input service voltage, and drain electrode connects described first NMOS tube drain electrode;
Described 8th PMOS grid connects described 6th PMOS grid, described output branch input, source electrode input service voltage, and drain electrode connects described second NMOS tube drain electrode;
Described first NMOS tube grid is connected with drain electrode, source ground;
Described second NMOS tube grid is connected with described first NMOS tube grid, source ground;
Described output branch road exports the electric current of described band temperature coefficient.
Above-mentioned circuit also comprises, and described output branch road comprises the first branch road PMOS (212), the second branch road PMOS (213);
Described first branch road PMOS source electrode input service voltage, grid is connected with described 7th PMOS grid, and drain electrode connects the source electrode of described second branch road PMOS;
The grid of described second branch road PMOS connects described 8th PMOS grid, and drain electrode exports the electric current of described band temperature coefficient.
Above-mentioned circuit also comprises, described current-type band gap reference voltage source comprises two or more and exports branch road, the electric current of the band temperature coefficient that described output branch road exports is mutually isolated, is all converted into low noise bandgap references voltage exports through described first resistance, described low-pass filter.
Above-mentioned circuit also comprises, and described first resistance is adjustable, and described circuit exports the low-noise band-gap reference voltage source of different magnitude of voltage.
Above-mentioned circuit also comprises, and described circuit is used for for the voltage controlled oscillator in radio frequency chip, and the one or more modules in digital compensation crystal oscillator or phaselocked loop provide low-noise band-gap reference voltage source.
The embodiment of the present invention provide for providing the circuit beneficial effect of bandgap voltage reference to be: do not need to increase a bulky capacitor outward at chip, save cost; Multichannel low-noise band-gap reference voltage source is provided, and makes whole circuit start speed fast by increasing fast start circuit.
Accompanying drawing explanation
A kind of low-noise band-gap reference voltage source theory diagram that Fig. 1 provides for the embodiment of the present invention;
The theory diagram of current-type band gap reference voltage source Bandgap in the accompanying drawing 1 that Fig. 2 provides for the embodiment of the present invention;
Another theory diagram of current-type band gap reference voltage source Bandgap in the accompanying drawing 1 that Fig. 3 provides for the embodiment of the present invention;
A kind of fast startup logic that Fig. 4 provides for the embodiment of the present invention;
A kind of fast startup logic input-output wave shape that Fig. 5 provides for the embodiment of the present invention.
Embodiment
For making goal of the invention, technical scheme and beneficial effect clearly, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
On SIM card chip provided by the invention, RF chip low-noise band-gap reference voltage source solution is as follows:
(1) design a current-type band gap reference voltage source, bandgap voltage reference provides the electric current of multichannel slightly temperature coefficient, and the temperature coefficient of electric current offsets the temperature coefficient of the resistance adopted in reference voltage source just.The bandgap voltage reference of zero-temperature coefficient is produced by current flowing resistance.
(2) connect the very low low-pass filter of a cutoff frequency after bandgap voltage reference, the noise filtering of bandgap voltage reference is fallen.
(3) to band-gap reference voltage source design fast start circuit, bandgap voltage reference is allowed to set up fast.
(4) different in RF chip in SIM cards of mobile phones modules provides different electric current, obtains low-noise band-gap reference voltage source through identical filtering method.
(5) bandgap voltage reference of different magnitude of voltage is obtained by regulating resistance.
With specific embodiment, a kind of low-noise band-gap reference voltage source provided by the invention is described in detail below.
Fig. 1 is low-noise band-gap reference voltage source theory diagram.
Bandgap (104) is current-type band gap reference voltage source, and the output of Bandgap is the electric current of slightly temperature coefficient, and the temperature coefficient of electric current offsets the temperature coefficient of the resistance R3 (103) adopted in reference voltage source just.The bandgap voltage reference of zero-temperature coefficient is produced by current flowing resistance R3 (103).MP1 (101) is PMOS (positiveMOS), conduction impedance is at 10M about Ω, PMOS MP2 (105) is switching tube, resistance R3 (103) one end ground connection, the other end is connected with the output (104) of current-type band gap reference voltage source Bandgap and one end of PMOS MP1 (101), when Bandgap (104) starts, PMOS MP2 (105) opens, electric current is charged to the magnitude of voltage of reference voltage Vref by MP2 (105) to electric capacity C1 (102), after startup, MP2 (105) closes, Vref voltage is charged to C11 (102) by the RC low-pass filter network combined by PMOS MP1 (101) and electric capacity C1 (102), suppose Rdson (MP1)=10Mohm (ohm), C1=20pF (method), the cutoff frequency of RC low-pass filter network is w=1/ (2 π RC)=800Hz, so the filter network formed thus can reduce the noise being greater than 800Hz frequency, if needed more low-frequency noise reduction, need to design the lower filter network of cutoff frequency, those skilled in the art can by adjustment related resistors R, the value of electric capacity C realizes.The noise that Vref produces is filtered out by RC low-pass filter network, obtains low-noise band-gap reference voltage source.
For providing the circuit of bandgap voltage reference, it comprises current-type band gap reference voltage source, the first resistance, low-pass filter; Current-type band gap reference voltage source is for exporting the electric current of band temperature coefficient; First resistance one end connects the output terminal of current-type band gap reference voltage source, other end ground connection, and it is the bandgap voltage reference of zero-temperature coefficient that the first resistance is used for the current conversion of band temperature coefficient;
Low-pass filter is used for the bandgap voltage reference of zero-temperature coefficient being converted into low noise bandgap references voltage and exports.Low-pass filter comprises the first PMOS, the second PMOS, the first electric capacity; First PMOS source electrode is connected with the ungrounded end of the first resistance, and drain electrode is connected with low-pass filter output terminal, Substrate ground; Second PMOS source electrode is connected with the ungrounded end of the first resistance, and drain electrode is connected with low-pass filter output terminal, and the second PMOS is opened when current-type band gap reference voltage source starts, and closes after current-type band gap reference voltage source starts; First electric capacity one end is connected with low-pass filter output terminal, other end ground connection.
This circuit also comprises fast start circuit, and fast start circuit is used for the outside enable signal of current-type band gap reference voltage source to be converted into the substrate that quick enabling signal exports the second PMOS to.
Fig. 2 is the theory diagram of current-type band gap reference voltage source Bandgap in accompanying drawing 1.The input voltage of voltage source is VDD (203), and earth terminal is GND (204).The area of triode Q1 (214) and the area ratio of triode Q2 (215) are 1:n, n is positive integer, and in bandgap voltage reference, n generally gets 8 or 24.This node of Vx is by operational amplifier OP (207), PMOS PM2 (208), PMOS PM3 (209) forms a regenerative feedback loop, Vy is by OP (207), PMOS PM1 (210), PMOS PM4 (211) forms a feedback loop, the degeneration factor of feedback loop is greater than the feedback factor of regenerative feedback loop, make the feedback of whole band gap reference voltage source circuit show negative feedback, make Vx and Vy clamper equal by negative feedback.The voltage position Vbe of Vx point, the voltage at R1 two ends is Δ Vbe, flow through PM1 (210) equal with the electric current of PM2 (208) and for I, because R2 (205)=R3 (206), so obtain electric current I=Δ Vbe/R1+Vbe/R2, Δ Vbe/R1 is the electric current of positive temperature coefficient (PTC), Vbe/R2 is the electric current of negative temperature coefficient, the resistance value of regulating resistance R1 (201) and resistance R2 (205), IB_VREF (202) electric current of slightly temperature coefficient can be obtained, as IB1_VREF(202), IB2_VREF, IB3_VREF, IB4_VREF.As shown in Figure 1, the slightly IB_VREF current flowing resistance R3 (206) of temperature coefficient, produce the Vref of zero-temperature coefficient, Vref=(Δ Vbe/R1+Vbe/R2) * R3, the value of R3 can arrange arbitrarily the Vref voltage obtaining wanting, as long as ensure that the PMOS of current mirror is operated in saturation region.If the low noise reference voltage source needing multichannel different, Multi-path electricity potential source can be gone out by the mode mirror image of current mirror, produce the band-gap reference electric current of multichannel slightly temperature coefficient, can accomplish between electric current and electric current to isolate well, reduce the mutual interference between reference voltage source, then produce non-interfering low noise reference voltage source by mirror image circuit.
Current-type band gap reference voltage source comprises the first triode (214), second triode (215), 3rd resistance (201), 4th resistance (205), 5th resistance (206), operational amplifier (207), 3rd PMOS (208), the 4th PMOS (209), the 5th PMOS (210), 6th PMOS (211), 7th PMOS (214), the 8th PMOS (215), the first NMOS tube, second NMOS tube, at least one exports branch road; 3rd PMOS, the 5th PMOS grid are all connected with described operational amplifier output terminal, the equal input service voltage of source electrode; 4th PMOS source electrode drains with the 3rd PMOS and is connected, and grid is connected with the 6th PMOS grid, drains to be connected with operational amplifier negative input; 6th PMOS source electrode drains with the 5th PMOS and is connected, and drains to be connected with operational amplifier positive input; First transistor emitter is connected with operational amplifier negative input, base stage, grounded collector; Second transistor emitter is connected with operational amplifier positive input by the 3rd resistance, base stage, grounded collector; The area of the first triode and the area ratio of the second triode are 1:n, n is positive integer; 4th resistance one end concatenation operation amplifier negative input, other end ground connection; 5th resistance one end concatenation operation amplifier positive input, other end ground connection; 7th PMOS grid connects the 5th PMOS grid, exports branch input, source electrode input service voltage, the drain electrode of drain electrode connection first NMOS tube; 8th PMOS grid connects the 6th PMOS grid, exports branch input, source electrode input service voltage, the drain electrode of drain electrode connection second NMOS tube; First NMOS tube grid is connected with drain electrode, source ground; Second NMOS tube grid is connected with the first NMOS tube grid, source ground; Export the electric current that branch road exports band temperature coefficient.
Export branch road and comprise the first branch road PMOS (212), the second branch road PMOS (213); First branch road PMOS source electrode input service voltage, grid is connected with the 7th PMOS grid, the source electrode of drain electrode connection second branch road PMOS; The grid of the second branch road PMOS connects the 8th PMOS grid, and drain electrode exports the electric current of band temperature coefficient.
Current-type band gap reference voltage source comprises two or more and exports branch road, and the electric current exporting the band temperature coefficient that branch road exports is mutually isolated, is all converted into low noise bandgap references voltage exports through described first resistance, low-pass filter.First resistance is adjustable, and circuit exports the low-noise band-gap reference voltage source of different magnitude of voltage.Circuit is used for for the voltage controlled oscillator in radio frequency chip, and the one or more modules in digital compensation crystal oscillator or phaselocked loop provide low-noise band-gap reference voltage source.
The low noise reference voltage source theory diagram of single channel as shown in Figure 3, the input voltage of voltage source is VDD (303), and earth terminal is that (304, resistance R1 functions are identical with its function in fig 2 for GND, repeat no more, output reference power supply is IB_VREF (302).
Fig. 4 is fast startup logic.
BG_EN is the enable signal of low-noise band-gap reference voltage source, and when BG_EN is low, low-noise band-gap reference voltage source circuit is closed, and when BG_EN is high, low-noise band-gap reference voltage source is opened.Low-noise band-gap reference voltage source is that BG_EN is by the low process uprised by being closed to unlatching.When BG_EN is by low uprising, BG_EN is through resistance R1, and the delay unit that electric capacity C1 is combined into carries out the time delay of about 54us, by adjusting resistance R1, the value of electric capacity C1 thus obtain different time delays, then carry out phase with the reverse signal of BG_EN and maybe have to arrive Fast_Setup signal.Fast_Setup is a narrow pulse signal, and when BG_EN keeps a constant voltage, Fast_Setup position high level, closes the PMOSMP2 pipe in Fig. 1.When BG_EN is by low uprising, Fast_Setup produces the low voltage pulse that is about 4us, closes after the of short duration unlatching PMOS MP24us time.
Fast start circuit is used for the outside enable signal of described current-type band gap reference voltage source to be converted into the substrate that quick enabling signal exports described second PMOS to.
Fast start circuit comprises the first not gate, the second not gate, the 3rd not gate, the 4th not gate, the second resistance, the second electric capacity, rejection gate; First not gate, the second not gate connect successively; Second resistance one end connects the second non-gate output terminal, and one end connects the 3rd not gate input end; Second electric capacity one end connects the 3rd not gate input end, one end ground connection; 3rd not gate, the 4th not gate connect successively; The input end of rejection gate connects the output terminal of the first not gate, the output terminal of the 4th not gate respectively, and rejection gate exports quick enabling signal.
Fig. 5 is fast startup logic input-output wave shape, for the present invention will be described further.
When BG_EN maintains low for a long time time, Fast_Setup is high level, and when BG_EN maintains high for a long time time, Fast_Setup is also high level, and only have when BG_EN is by low uprising, Fast_Setup just can produce the pulse of an about 4us.
In RFIC, require very high to the noise objective of reference voltage source, require that reference voltage source isolation is also very high simultaneously, the present invention is applicable to the voltage controlled oscillator VCO in RFIC, numeral compensation crystal oscillator DCXO, the modules such as phase-locked loop pll (PhaseLockedLoop) provide low noise reference voltage source.
In sum, a kind of low-noise band-gap reference voltage source circuit realiration structure is embodiments provided; A kind of circuit realiration structure of current-type band gap reference voltage source; A kind of fast startup logic realize structure and control mode; A kind of isolation method of Multi-path reference voltage;
Above a kind of low-noise band-gap reference voltage source that the embodiment of the present invention provides is described in detail, apply specific case herein to set forth principle of the present invention and embodiment, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (8)
1. for providing a circuit for bandgap voltage reference, it is characterized in that: comprise current-type band gap reference voltage source, the first resistance, low-pass filter;
Described current-type band gap reference voltage source is for exporting the electric current of band temperature coefficient;
Described first resistance one end connects the output terminal of described current-type band gap reference voltage source, other end ground connection, and it is the bandgap voltage reference of zero-temperature coefficient that described first resistance is used for the current conversion of described band temperature coefficient;
Described low-pass filter is used for the bandgap voltage reference of described zero-temperature coefficient being converted into low noise bandgap references voltage and exports;
Described low-pass filter comprises the first PMOS, the second PMOS, the first electric capacity;
Described first PMOS source electrode is connected with the ungrounded end of described first resistance, and drain electrode is connected with described low-pass filter output terminal, grounded-grid;
Described second PMOS source electrode is connected with the ungrounded end of described first resistance, drain electrode is connected with described low-pass filter output terminal, described second PMOS is opened when described current-type band gap reference voltage source starts, and closes after described current-type band gap reference voltage source starts;
Described first electric capacity one end is connected with described low-pass filter output terminal, other end ground connection.
2. according to claim 1 for providing the circuit of bandgap voltage reference, it is characterized in that, this circuit also comprises fast start circuit, and described fast start circuit is used for the outside enable signal of described current-type band gap reference voltage source to be converted into the grid that quick enabling signal exports described second PMOS to.
3. according to claim 2ly it is characterized in that for providing the circuit of bandgap voltage reference, described fast start circuit comprises the first not gate, the second not gate, the 3rd not gate, the 4th not gate, the second resistance, the second electric capacity, rejection gate;
Described first not gate, the second not gate connect successively;
Described second resistance one end connects described second non-gate output terminal, and one end connects described 3rd not gate input end;
Described second electric capacity one end connects described 3rd not gate input end, one end ground connection;
Described 3rd not gate, the 4th not gate connect successively;
The input end of described rejection gate connects the output terminal of described first not gate, the output terminal of described 4th not gate respectively, and described rejection gate exports described quick enabling signal.
4. according to claim 1 for providing the circuit of bandgap voltage reference, it is characterized in that, described current-type band gap reference voltage source comprises the first triode (214), second triode (215), 3rd resistance (201), 4th resistance (205), 5th resistance (206), operational amplifier (207), 3rd PMOS (208), 4th PMOS (209), 5th PMOS (210), 6th PMOS (211), 7th PMOS (214), 8th PMOS (215), first NMOS tube, second NMOS tube, at least one exports branch road,
Described 3rd PMOS, the 5th PMOS grid are all connected with described operational amplifier output terminal, the equal input service voltage of source electrode;
Described 4th PMOS source electrode drains with described 3rd PMOS and is connected, and grid is connected with described 6th PMOS grid, drains to be connected with described operational amplifier negative input;
Described 6th PMOS source electrode drains with described 5th PMOS and is connected, and drains to be connected with described operational amplifier positive input;
Described first transistor emitter is connected with described operational amplifier negative input, base stage, grounded collector;
Described second transistor emitter is connected with described operational amplifier positive input by described 3rd resistance, base stage, grounded collector;
The area of described first triode and the area ratio of described second triode are 1:n, n is positive integer;
Described 4th resistance one end connects described operational amplifier negative input, other end ground connection;
Described 5th resistance one end connects described operational amplifier positive input, other end ground connection;
Described 7th PMOS grid connects described 5th PMOS grid, described output branch input, source electrode input service voltage, and drain electrode connects described first NMOS tube drain electrode;
Described 8th PMOS grid connects described 6th PMOS grid, described output branch input, source electrode input service voltage, and drain electrode connects described second NMOS tube drain electrode;
Described first NMOS tube grid is connected with drain electrode, source ground;
Described second NMOS tube grid is connected with described first NMOS tube grid, source ground;
Described output branch road exports the electric current of described band temperature coefficient.
5. according to claim 4ly it is characterized in that for providing the circuit of bandgap voltage reference, described output branch road comprises the first branch road PMOS (212), the second branch road PMOS (213);
Described first branch road PMOS source electrode input service voltage, grid is connected with described 7th PMOS grid, and drain electrode connects the source electrode of described second branch road PMOS;
The grid of described second branch road PMOS connects described 8th PMOS grid, and drain electrode exports the electric current of described band temperature coefficient.
6. according to claim 4 for providing the circuit of bandgap voltage reference, it is characterized in that: described current-type band gap reference voltage source comprises two or more and exports branch road, the electric current of the band temperature coefficient that described output branch road exports is mutually isolated, is all converted into low noise bandgap references voltage exports through described first resistance, described low-pass filter.
7. the circuit for providing bandgap voltage reference according to any one of claim 1-6, is characterized in that: described first resistance is adjustable, and described circuit exports the low-noise band-gap reference voltage source of different magnitude of voltage.
8. the circuit for providing bandgap voltage reference according to any one of claim 1-6, it is characterized in that: described circuit is used for for the voltage controlled oscillator in radio frequency chip, the one or more modules in digital compensation crystal oscillator or phaselocked loop provide low-noise band-gap reference voltage source.
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| CN105759894A (en) * | 2016-04-20 | 2016-07-13 | 佛山臻智微芯科技有限公司 | Double-purpose current source generator |
| CN110262622B (en) * | 2019-07-04 | 2021-01-29 | 中国电子科技集团公司第五十八研究所 | Band-gap reference source with quick start and high PSRR (power supply rejection ratio) |
| CN110703840B (en) * | 2019-07-18 | 2024-07-30 | 广州润芯信息技术有限公司 | Low-noise band-gap reference output voltage establishing circuit |
| CN110716605B (en) * | 2019-10-14 | 2020-11-17 | 西安理工大学 | Quick start PTAT current source based on operational amplifier positive feedback mechanism |
| CN112859993B (en) * | 2021-01-08 | 2022-05-17 | 中国科学院微电子研究所 | High-voltage band-gap reference voltage source and generation method thereof, high-voltage fixed power supply and application thereof |
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| CN103207636A (en) | 2013-07-17 |
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