CN107331632A - A kind of polysilicon side wall deposits the detection method of needle pore defect - Google Patents
A kind of polysilicon side wall deposits the detection method of needle pore defect Download PDFInfo
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- CN107331632A CN107331632A CN201710581730.9A CN201710581730A CN107331632A CN 107331632 A CN107331632 A CN 107331632A CN 201710581730 A CN201710581730 A CN 201710581730A CN 107331632 A CN107331632 A CN 107331632A
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- side wall
- detection method
- polysilicon
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- needle pore
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention proposes that a kind of polysilicon side wall deposits the detection method of needle pore defect, comprises the following steps：By the normal flow of wafer to oxide-film atom layer deposition process previous step；The dielectric layer on the wafer；Oxide-film atom layer deposition process is carried out on said structure, oxide-film is formed；Using the oxide-film as barrier layer, technique is performed etching to the dielectric layer on wafer；Defects detection is carried out, dielectric layer degree of impairment is detected.Polysilicon side wall proposed by the present invention deposits the detection method of needle pore defect, by setting up defects detection flow and developing detection method, sets up the online index for this defect, so as to be that Yield lmproved and research and development of products contribute.
Description
Technical field
Field, and more particularly to a kind of polysilicon side wall deposition needle pore defect are manufactured the present invention relates to semiconductor integrated circuit
Detection method.
Background technology
With the development of integrated circuit technology, the continuous micro of size of semiconductor technology device and the lifting of performance, more
More to need to apply atom layer deposition process, ald is divided into diffusional deposition and chemical vapor deposition etc., and chemical gaseous phase
Needle pore defect problem easily occurs in deposition process, as shown in figure 1, in 28nm R ＆ D of complexes, finding polysilicon side wall
Needle pore defect, cause W to make contact hole and polysilicon short by pin hole when depositing.The reason for causing this problem such as Fig. 2 a and
Shown in Fig. 2 b, the structure sequentially consists of brilliant back of the body polysilicon side wall SIN 10, crystalline substance back of the body polysilicon 20, Si substrates 30, side wall
SIN 40, oxide layer 50, polysilicon 60, SMT OX 70, SMT SIN 80 and needle pore defect 90, in SMT ALD OX DEP mistakes
Cheng Zhong, due to there is needle pore defect, causes in follow-up SIN RM techniques so that needle pore defect is delivered to polysilicon side
On wall so that side wall forms needle pore defect.
Because OX light transmission features optical detection is difficult to detect, meanwhile, after side wall produces needle pore defect, due to it
In polysilicon side, it is difficult to defective signal, therefore this defect is difficult by effective detection in itself.
The content of the invention
The present invention proposes that a kind of polysilicon side wall deposits the detection method of needle pore defect, by setting up defects detection flow simultaneously
Detection method is developed, the online index for this defect is set up, so as to be that Yield lmproved and research and development of products contribute.
In order to achieve the above object, the present invention proposes that a kind of polysilicon side wall deposits the detection method of needle pore defect, including
The following steps：
By the normal flow of wafer to oxide-film atom layer deposition process previous step；
The dielectric layer on the wafer；
Oxide-film atom layer deposition process is carried out on said structure, oxide-film is formed；
Using the oxide-film as barrier layer, technique is performed etching to the dielectric layer on wafer；
Defects detection is carried out, dielectric layer degree of impairment is detected.
Further, the dielectric layer that this method is additionally included on wafer is performed etching after the completion of processing step, is had to wafer
Source region polysilicon carries out unobstructed etching technics.
Further, the defect detection procedure also includes detection active area polysilicon degree of impairment.
Further, the dielectric layer includes the combination layer of oxidation film layer, silicon nitride layer or both.
Further, the technique that performed etching to dielectric layer includes dry etching or wet etching.
Further, the technique that performed etching to active area/polysilicon includes dry etching or wet etching.
Further, the defects detection is carried out using optical detecting method or electron beam scanning method.
Polysilicon side wall proposed by the present invention deposits the detection method of needle pore defect, can be with reactor product technique by setting up
The testing process of situation, makes ALD OX films turn into the barrier layer of wet etching or dry etching, its lower floor is thin in defective locations
Film or substrate will be etched, so that defect problem deteriorates, in order to defects detection.And carry out assessment and the prison of process window
Control, so as to improve yield and shorten the R＆D cycle.The problem of present invention can effectively monitor ALD OX needle pore defects, it is to avoid follow-up
The yield loss caused, is that semiconductor yields provide safeguard.
Brief description of the drawings
Fig. 1 a and Fig. 1 b show contact hole and polysilicon short schematic diagram caused by polysilicon side wall needle pore defect.
Fig. 2 a and Fig. 2 b show SMT ALD OX needle pore defects and polysilicon side wall signal are delivered to after SIN RM techniques
Figure.
Fig. 3 show the detection method flow chart of the polysilicon side wall deposition needle pore defect of present pre-ferred embodiments.
Fig. 4 a and Fig. 4 b, which are shown, to be performed etching the film or substrate of rear lower floor by barrier layer of ALD OX and is damaged signal
Figure.
Fig. 5 a and Fig. 5 b show substrate and are damaged the rear schematic diagram for being easy to detection with polysilicon.
Embodiment
The embodiment of the present invention is provided below in conjunction with accompanying drawing, but the invention is not restricted to following embodiment.Root
According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simple
The form of change and use non-accurately ratio, be only used for conveniently, lucidly aid in illustrating the embodiment of the present invention purpose.
Fig. 3 is refer to, Fig. 3 show the detection method of the polysilicon side wall deposition needle pore defect of present pre-ferred embodiments
Flow chart.The present invention proposes that a kind of polysilicon side wall deposits the detection method of needle pore defect, comprises the following steps：
Step S100：By the normal flow of wafer to oxide-film atom layer deposition process previous step；
Step S200：The dielectric layer on the wafer；
Step S300：Oxide-film atom layer deposition process is carried out on said structure, oxide-film is formed；
Step S400：Using the oxide-film as barrier layer, technique is performed etching to the dielectric layer on wafer；
Step S500：Defects detection is carried out, dielectric layer degree of impairment is detected.
According to present pre-ferred embodiments, the dielectric layer that this method is additionally included on wafer performs etching processing step completion
Afterwards, unobstructed etching technics is carried out to wafer active area polysilicon.Further, the defect detection procedure also has including detection
Source region polysilicon degree of impairment.As shown in figures 4 a and 4b, Fig. 4 a and Fig. 4 b are shown using ALD OX performs etching as barrier layer
The film or substrate of lower floor are damaged schematic diagram afterwards.The structure sequentially consists of brilliant back of the body polysilicon side wall SIN 100, the crystalline substance back of the body
Polysilicon 200, Si substrates 300, side wall SIN 400, oxide layer 500, polysilicon 600, SIN layers 700, ALD OX 800 and pin hole
Defect 900, the present invention carries out silicon nitride layer deposition before ALD OX DEP, and after DEP ALD OX, for silicon nitride layer
Dry etch process is carried out, Si etching technics is then carried out to wafer again, one of the method that can be selected is to apply tetramethyl hydrogen
Aoxidize ammonia (TMAH) and carry out Si etchings.Defects detection finally is carried out to wafer, assessing OX pin holes by Si/Poly damage defects lacks
The situation of falling into.It refer to Fig. 5 a and Fig. 5 b, Fig. 5 a and Fig. 5 b and show substrate and polysilicon and be damaged the rear signal for being easy to detection
Figure.
According to present pre-ferred embodiments, the dielectric layer includes the combination layer of oxidation film layer, silicon nitride layer or both.
The technique that performed etching to dielectric layer includes dry etching or wet etching.
The technique that performed etching to active area/polysilicon includes dry etching or wet etching.
The defects detection is carried out using optical detecting method or electron beam scanning method.
In summary, polysilicon side wall proposed by the present invention deposits the detection method of needle pore defect, can be anti-by setting up
The testing process of Product Process situation is answered, ALD OX films is turned into the barrier layer of wet etching or dry etching, in defective bit
Putting its lower film or substrate will be etched, so that defect problem deteriorates, in order to defects detection.And carry out process window
Assess with monitoring, so as to improve yield and shorten the R＆D cycle.The problem of present invention can effectively monitor ALD OX needle pore defects,
The yield loss subsequently caused is avoided, is that semiconductor yields provide safeguard.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention.Skill belonging to of the invention
Has usually intellectual in art field, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations.Cause
This, the scope of protection of the present invention is defined by those of the claims.
Claims (7)
1. a kind of polysilicon side wall deposits the detection method of needle pore defect, it is characterised in that comprise the following steps：
By the normal flow of wafer to oxide-film atom layer deposition process previous step；
The dielectric layer on the wafer；
Oxide-film atom layer deposition process is carried out on said structure, oxide-film is formed；
Using the oxide-film as barrier layer, technique is performed etching to the dielectric layer on wafer；
Defects detection is carried out, dielectric layer degree of impairment is detected.
2. polysilicon side wall according to claim 1 deposits the detection method of needle pore defect, it is characterised in that this method is also
It is included in after the completion of the dielectric layer on wafer performs etching processing step, unobstructed etching work is carried out to wafer active area polysilicon
Skill.
3. polysilicon side wall according to claim 2 deposits the detection method of needle pore defect, it is characterised in that the defect
Detecting step also includes detection active area polysilicon degree of impairment.
4. polysilicon side wall according to claim 1 deposits the detection method of needle pore defect, it is characterised in that the dielectric
Layer includes the combination layer of oxidation film layer, silicon nitride layer or both.
5. polysilicon side wall according to claim 1 deposits the detection method of needle pore defect, it is characterised in that described couple of Jie
Electric layer, which performs etching technique, includes dry etching or wet etching.
6. polysilicon side wall according to claim 1 deposits the detection method of needle pore defect, it is characterised in that described pair has
Source region/polysilicon, which performs etching technique, includes dry etching or wet etching.
7. polysilicon side wall according to claim 1 deposits the detection method of needle pore defect, it is characterised in that the defect
Detection is carried out using optical detecting method or electron beam scanning method.
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| CN201710581730.9A CN107331632A (en) | 2017-07-17 | 2017-07-17 | A kind of polysilicon side wall deposits the detection method of needle pore defect |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331633A (en) * | 2017-08-07 | 2017-11-07 | 上海华力微电子有限公司 | A kind of atomic layer oxide deposits needle pore defect detection method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5702980A (en) * | 1996-03-15 | 1997-12-30 | Taiwan Semiconductor Manufacturing Company Ltd | Method for forming intermetal dielectric with SOG etchback and CMP |
| CN1674243A (en) * | 2004-03-26 | 2005-09-28 | 力晶半导体股份有限公司 | A detecting method for tube type defect |
| CN104701209A (en) * | 2015-03-30 | 2015-06-10 | 上海华力微电子有限公司 | Gate-oxide layer defect detection method and device failure positioning method |
-
2017
- 2017-07-17 CN CN201710581730.9A patent/CN107331632A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5702980A (en) * | 1996-03-15 | 1997-12-30 | Taiwan Semiconductor Manufacturing Company Ltd | Method for forming intermetal dielectric with SOG etchback and CMP |
| CN1674243A (en) * | 2004-03-26 | 2005-09-28 | 力晶半导体股份有限公司 | A detecting method for tube type defect |
| CN104701209A (en) * | 2015-03-30 | 2015-06-10 | 上海华力微电子有限公司 | Gate-oxide layer defect detection method and device failure positioning method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331633A (en) * | 2017-08-07 | 2017-11-07 | 上海华力微电子有限公司 | A kind of atomic layer oxide deposits needle pore defect detection method |
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