CN107317558A - Microwave amplifier with multigroup microstrip array - Google Patents
Microwave amplifier with multigroup microstrip array Download PDFInfo
- Publication number
- CN107317558A CN107317558A CN201710470759.XA CN201710470759A CN107317558A CN 107317558 A CN107317558 A CN 107317558A CN 201710470759 A CN201710470759 A CN 201710470759A CN 107317558 A CN107317558 A CN 107317558A
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- China
- Prior art keywords
- micro
- strip
- sections
- microstrip
- array
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
Abstract
The invention discloses the microwave amplifier with multigroup microstrip array, including micro-strip path, annular micro-strip circle and horizontal microstrip line；The axis of the horizontal microstrip line is arranged in above micro-strip path perpendicular to micro-strip path axis；The two ends of the horizontal microstrip line are respectively provided with annular micro-strip circle；The annular micro-strip circle includes two high impedance sections and two Low ESR sections；Described two high impedance sections and two Low ESR sections are arranged alternately the cyclic shaped microstrip circle of closed successively；The width of the Low ESR section uses 0.2~0.3mm；The width of the high impedance section uses 0.1~0.15mm.The present invention has the microwave amplifier of multigroup microstrip array, by setting two high impedance sections and two Low ESR sections in annular micro-strip circle, so as to improve inhibition, and then reduces the passband fluctuation and cost of manufacture of microwave amplifier.
Description
Technical field
The present invention relates to field of microwave communication, and in particular to the microwave amplifier with multigroup microstrip array.
Background technology
Microwave amplifier transistor realizes the device of amplification as active device to microwave signal.It is divided into microwave high power
Two kinds of amplifier, microwave low-noise amplifier.Microwave power amplifier is used to amplify stronger microwave signal.Refer mainly to indicate：
1. power output, 2. non-linear distortion.Non-linear distortion will cause am signals, and such as AM, MQAM distortion make limit band
Signal spectrum broadening.Reducing the measure of non-linear distortion typically has Power back and pre-distortion method.Power back is reduction
Power output, makes transistor work in linear zone.It is that appropriate distortion components are added in input signal, makes it in the amplifier
With the distortion cancellation newly produced.After these measures are taken, non-linear distortion can typically reach requirement.In large signal operation
Under state, microwave amplifier can produce the situation of harmonic distortion, therefore can produce loss to fundamental signal.
Currently for using dumbbell shape defect grounding structure harmonic distortion, and traditional dumbbell shape defect grounding structure will more
Reach that the inhibition of needs needs to set many groups, this will improve the passband fluctuation of microwave amplifier, influence microwave amplification
Device performance.
The content of the invention
The technical problems to be solved by the invention are that traditional dumbbell shape defect grounding structure will reach the suppression effect of needs
Fruit needs to set many groups, and this will improve the passband fluctuation of microwave amplifier, influences microwave amplifier performance, it is therefore intended that carry
For the microwave amplifier with multigroup microstrip array, solve the above problems.
The present invention is achieved through the following technical solutions：
Microwave amplifier with multigroup microstrip array, including micro-strip path, annular micro-strip circle and horizontal microstrip line；It is described
The axis of horizontal microstrip line is arranged in above micro-strip path perpendicular to micro-strip path axis；The two ends of the horizontal microstrip line
It is respectively provided with annular micro-strip circle；The annular micro-strip circle includes two high impedance sections and two Low ESR sections；Described two high impedances
Section and two Low ESR sections are arranged alternately the cyclic shaped microstrip circle of closed successively；The width of Low ESR section using 0.2~
0.3mm；The width of the high impedance section uses 0.1~0.15mm.
In the prior art, currently for using dumbbell shape defect grounding structure harmonic distortion, and traditional dumbbell shape lacks more
Sunken ground structure will reach that the inhibition of needs needs to set many groups, and this will improve the passband fluctuation of microwave amplifier,
Influence microwave amplifier performance.When the present invention is applied, when micro-strip path is by microwave, microwave is oriented to annular by horizontal microstrip line
Micro-strip circle, two high impedances section of annular micro-strip circle and two Low ESR sections constitute ring ladder electric impedance resonator, so as to micro-
Ripple carries out Out-of-band rejection, because two high impedance sections and two Low ESR sections are cross coupled with one another, zero point is produced, so that compared with biography
The defect grounding structure of system, there is more preferable Out-of-band rejection effect, and then when needing to reach identical inhibition, requirement
It is less, reduce the passband fluctuation and cost of manufacture of microwave amplifier.The present invention in annular micro-strip circle by setting two high resistants
Anti- section and two Low ESR sections, so as to improve inhibition, and then reduce the passband fluctuation of microwave amplifier and are fabricated to
This.
Further, the end of the horizontal microstrip line is connected to high impedance section.
Further, the length sum of described two high impedance sections and two Low ESR sections uses microwave wavelength.
Further, the annular micro-strip circle side of the being set to annular, and two high impedance sections and two Low ESR sections are respectively
Positioned at the four edges of party's ring.
Further, the quantity of the horizontal microstrip line be two and more than, the quantity of the annular micro-strip circle is laterally
Twice of microstrip line, the horizontal microstrip line and connected two annular micro-strip circles constitute an array element；The battle array
The quantity of column unit is identical with horizontal microstrip line, and two and above array element forming array.
When the present invention is applied, horizontal microstrip line and connected two annular micro-strip circles constitute an array element,
Two and above array element and forming array, so as to improve Out-of-band rejection effect.
The present invention compared with prior art, has the following advantages and advantages：
1st, the present invention has the microwave amplifier of multigroup microstrip array, by setting two high impedance sections in annular micro-strip circle
With two Low ESR sections, so as to improve inhibition, and then the passband fluctuation and cost of manufacture of microwave amplifier are reduced；
2nd, the present invention has the microwave amplifier of multigroup microstrip array, horizontal microstrip line and two connected annulars
Micro-strip circle constitutes an array element, two and above array element and forming array, so as to improve Out-of-band rejection effect.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings：
Fig. 1 is schematic structural view of the invention.
Mark and corresponding parts title in accompanying drawing：
1- micro-strip paths, 2- annular micro-strip circles, 3- transverse direction microstrip lines, 21- Low ESRs section, 22- high impedances section.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, with reference to embodiment and accompanying drawing, to this
Invention is described in further detail, and exemplary embodiment and its explanation of the invention is only used for explaining the present invention, does not make
For limitation of the invention.
Embodiment
As shown in figure 1, the present invention has the microwave amplifier of multigroup microstrip array, including micro-strip path 1, annular micro-strip circle
2 and horizontal microstrip line 3；The axis of the horizontal microstrip line 3 is arranged on micro-strip path 1 perpendicular to the axis of micro-strip path 1
Side；The two ends of the horizontal microstrip line 3 are respectively provided with annular micro-strip circle 2；The annular micro-strip circle 2 includes two high impedance 22 Hes of section
Two Low ESR sections 21；Described two high impedance sections 22 and two Low ESR sections 21 are arranged alternately the cyclic shaped microstrip of closed successively
Circle 2；The width of the Low ESR section 21 uses 0.2~0.3mm；The width of the high impedance section 22 uses 0.1~0.15mm.Institute
The end for stating horizontal microstrip line 3 is connected to high impedance section 22.The length of described two high impedance sections 22 and two Low ESR sections 21
Sum uses microwave wavelength.The side's of the being set to annular of annular micro-strip circle 2, and two high impedance sections 22 and two Low ESR sections 21
It is located at the four edges of party's ring respectively.The quantity of the horizontal microstrip line 3 be two and more than, the number of the annular micro-strip circle 2
Measure as twice of horizontal microstrip line 3, the horizontal microstrip line 3 and connected two annular micro-strip circles 2 constitute an arrays
Unit；The quantity of the array element is identical with horizontal microstrip line 3, and two and above array element forming array.
When the present embodiment is implemented, when micro-strip path 1 is by microwave, horizontal microstrip line 3 is by microwave guide ring shaped microstrip circle
2, two high impedances section 22 of annular micro-strip circle 2 and two Low ESR sections 21 constitute ring ladder electric impedance resonator, so as to micro-
Ripple carries out Out-of-band rejection, because two high impedance sections 22 and two Low ESR sections 21 are cross coupled with one another, produces zero point, so that than
Traditional defect grounding structure is played, there is more preferable Out-of-band rejection effect, and then when needing to reach identical inhibition, it is required
Negligible amounts, reduce the passband fluctuation and cost of manufacture of microwave amplifier.The present invention in annular micro-strip circle 2 by setting two
High impedance section 22 and two Low ESR sections 21, so as to improve inhibition, and then reduce the passband fluctuation of microwave amplifier
And cost of manufacture.Horizontal microstrip line 3 and connected two annular micro-strip circles 2 constitute an array elements, two and with
Upper array element and forming array, so as to improve Out-of-band rejection effect.
Above-described embodiment, has been carried out further to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail, should be understood that the embodiment that the foregoing is only the present invention, be not intended to limit the present invention
Protection domain, within the spirit and principles of the invention, any modification, equivalent substitution and improvements done etc. all should be included
Within protection scope of the present invention.
Claims (5)
1. the microwave amplifier with multigroup microstrip array, including micro-strip path (1), it is characterised in that also including annular micro-strip
Enclose (2) and horizontal microstrip line (3)；The axis of the horizontal microstrip line (3) is arranged in micro- perpendicular to micro-strip path (1) axis
Above band path (1)；The two ends of the horizontal microstrip line (3) are respectively provided with annular micro-strip circle (2)；Annular micro-strip circle (2) bag
Include two high impedance sections (22) and two Low ESR sections (21)；Described two high impedances section (22) and two Low ESRs section (21) according to
It is secondary to be arranged alternately the cyclic shaped microstrip circle (2) of closed；The width of the Low ESR section (21) uses 0.2~0.3mm；The high resistant
The width of anti-section (22) uses 0.1~0.15mm.
2. the microwave amplifier according to claim 1 with multigroup microstrip array, it is characterised in that the horizontal micro-strip
The end of line (3) is connected to high impedance section (22).
3. the microwave amplifier according to claim 1 with multigroup microstrip array, it is characterised in that described two high resistants
The length sum of anti-section (22) and two Low ESR sections (21) uses microwave wavelength.
4. the microwave amplifier according to claim 1 with multigroup microstrip array, it is characterised in that the annular micro-strip
(2) side of being set to annular is enclosed, and two high impedance sections (22) and two Low ESR sections (21) are located at the four edges of party's ring respectively.
5. the microwave amplifier according to claim 1 with multigroup microstrip array, it is characterised in that the horizontal micro-strip
The quantity of line (3) be two and more than, the quantity of the annular micro-strip circle (2) is horizontal microstrip line (3) twice, and the transverse direction is micro-
An array element is constituted with line (3) and connected two annular micro-strip circles (2)；The quantity of the array element and horizontal stroke
It is identical to microstrip line (3), and two and above array element forming array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710470759.XA CN107317558A (en) | 2017-06-20 | 2017-06-20 | Microwave amplifier with multigroup microstrip array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710470759.XA CN107317558A (en) | 2017-06-20 | 2017-06-20 | Microwave amplifier with multigroup microstrip array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107317558A true CN107317558A (en) | 2017-11-03 |
Family
ID=60181936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710470759.XA Pending CN107317558A (en) | 2017-06-20 | 2017-06-20 | Microwave amplifier with multigroup microstrip array |
Country Status (1)
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM336631U (en) * | 2008-01-11 | 2008-07-11 | Univ Shu Te | A multilayer bandpass filter with stepped impedance resonators and L-shape defected ground structure |
| CN201570569U (en) * | 2009-03-27 | 2010-09-01 | 南京理工大学 | Mini-type defected ground structure microstrip lowpass filter |
| CN101950826A (en) * | 2010-09-01 | 2011-01-19 | 华东交通大学 | Square annular defected ground structure microwave dual-mode band-pass filter |
| US20120071109A1 (en) * | 2009-05-18 | 2012-03-22 | Daniel Akesson | Harmonic Control Apparatus and Related Radio Frequency Devices and Base Stations |
| US20120228019A1 (en) * | 2011-03-07 | 2012-09-13 | Nokia Corporation | Apparatus and Associated Methods |
| CN103682534A (en) * | 2013-12-26 | 2014-03-26 | 航天恒星科技有限公司 | Dielectric waveguide filter with defected ground loaded on magnetic coupling structure |
| CN204614908U (en) * | 2015-04-29 | 2015-09-02 | 湖北大学 | The fractal defect ground structure Microstrip Low-Pass of a kind of sharp cut-off Hilbert |
-
2017
- 2017-06-20 CN CN201710470759.XA patent/CN107317558A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM336631U (en) * | 2008-01-11 | 2008-07-11 | Univ Shu Te | A multilayer bandpass filter with stepped impedance resonators and L-shape defected ground structure |
| CN201570569U (en) * | 2009-03-27 | 2010-09-01 | 南京理工大学 | Mini-type defected ground structure microstrip lowpass filter |
| US20120071109A1 (en) * | 2009-05-18 | 2012-03-22 | Daniel Akesson | Harmonic Control Apparatus and Related Radio Frequency Devices and Base Stations |
| CN101950826A (en) * | 2010-09-01 | 2011-01-19 | 华东交通大学 | Square annular defected ground structure microwave dual-mode band-pass filter |
| US20120228019A1 (en) * | 2011-03-07 | 2012-09-13 | Nokia Corporation | Apparatus and Associated Methods |
| CN103682534A (en) * | 2013-12-26 | 2014-03-26 | 航天恒星科技有限公司 | Dielectric waveguide filter with defected ground loaded on magnetic coupling structure |
| CN204614908U (en) * | 2015-04-29 | 2015-09-02 | 湖北大学 | The fractal defect ground structure Microstrip Low-Pass of a kind of sharp cut-off Hilbert |
Non-Patent Citations (1)
| Title |
|---|
| SI-GYUN JEONG ET AL.: "Harmonic Reduction Amplifier using λ/4 High Impedance Bias Line with Defected Ground Structure (DGS)", 《2002 32ND EUROPEAN MICROWAVE CONFERENCE》 * |
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Application publication date: 20171103 |
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