CN206041939U - RF power amplifier output matching circuit structure - Google Patents

RF power amplifier output matching circuit structure Download PDF

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Publication number
CN206041939U
CN206041939U CN201620335435.6U CN201620335435U CN206041939U CN 206041939 U CN206041939 U CN 206041939U CN 201620335435 U CN201620335435 U CN 201620335435U CN 206041939 U CN206041939 U CN 206041939U
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China
Prior art keywords
power amplifier
harmonic
network
inductance
electric capacity
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Expired - Fee Related
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CN201620335435.6U
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Chinese (zh)
Inventor
林俊明
章国豪
张志浩
余凯
郑耀华
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Guangdong University of Technology
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Guangdong University of Technology
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Abstract

The utility model discloses a RF power amplifier output matching circuit structure, including power amplification pipe, choke inductance, power amplification pipe output electric capacity, second harmonic network and broadband matching network, the second harmonic network is two -terminal network, the broadband matching network includes the band -pass matching network who comprises the inductance capacitance to and blocking capacitance. The utility model discloses utilize output electric capacity, second harmonic network and the broadband matching network implementation impedance conversion of power amplification pipe, strengthened the inhibitory effect to second harmonic, utilize third harmonic betterly, thereby make power amplifier's output voltage wave form more be close the square wave, output current more is close the half -wave, so voltage waveform is less with the current waveform overlap section, has improved power amplifier's the whole efficiency and the linearity greatly, has reduced the harmonic distortion of radio frequency power amplifier output stage effectively.

Description

A kind of radio-frequency power amplifier output matching circuit structure
Technical field
This utility model is related to a kind of radio-frequency power amplifier output matching circuit.
Background technology
At present, the global mobile network for being applied to the portability mobile device such as smart mobile phone is rapidly developed and is expanded, many work( Energy smart mobile phone application is further extensive.In order to the big data for providing high data rate is transmitted, Modern Communication System (3G/4G) is adopted The modulation that phase-shift keying (PSK) and the amplitude shift keyings such as the modulation system of more complicated spectral efficient, such as QPSK and AQM combine Mode, this modulation system require that power amplifier has the strict linearity, and the index linearity is power amplification with efficiency The conflict index of device design, high linearity mean relatively low power efficiency.
For meeting the use demand of different user, smart mobile phone typically all supports two or more network formats, And as the working form of mobile phone is different, its effective frequency bandwidth is different, it is therefore desirable to the output of radio-frequency power amplifier There is broadband impedance transfer capability with circuit.
Additionally, in order to ensure that the power amplifier for working in certain special frequency channel does not disturb successive bands signal, power amplification The output spectrum of device must meet corresponding ACLR and require.For example, be applied to LTE power amplifier E_UTRA_ACLR for- 33dBc。
As the functional module and Modern Communication System modulation system of portable equipment become increasingly complex, it is desirable to be applied to new one For the power amplifier of communication system, it is necessary to have higher power efficiency and the linearity, and have wider bandwidth of operation.
In Chinese patent 201210041407.X, suppress harmonic wave by using the output matching circuit of lowpass structures simultaneously Improve the efficiency of power amplifier.Application in terms of but this structure is not suitable for broadband, and efficiency raising degree is not clear It is aobvious.
In addition, in Chinese CN201510057384.5, by using second harmonic network, triple-frequency harmonics network and broadband The combination of matching network reaches stronger harmonics restraint effect, however this method preferably using triple-frequency harmonics so as to Decline efficiency.
Utility model content
In the efficiency and harmonics restraint processing method of the broadband matching circuit of the radio-frequency power amplifier reported, it is impossible to Preferably realize being compromised between bandwidth, efficiency and the linearity, and transistor output capacitance is not accounted for match circuit Impact.
The purpose of this utility model is to overcome weak point of the prior art, there is provided a kind of broadband and efficient penetrated Frequency output matching of power amplifier circuit structure, which is achieved through the following technical solutions:
A kind of radio-frequency power amplifier output matching circuit structure, the output matching circuit include power amplifier tube 101, grip Stream inductance 102, power amplifier tube output capacitor 103, second harmonic network 104 and broadband matching network 107;
Second harmonic network 104 be connected to for one end power amplifier tube 101 drain electrode (colelctor electrode) other end ground connection by The singly-terminal pair that harmonic nests inductance 105 is composed in series with harmonic nests electric capacity 106;
Broadband matching network 107 is included by the second inductance 112, the first inductance 110, the second electric capacity 109 and the first electric capacity 108 The band logical matching network of composition, and capacitance 111;
Second inductance, 112 one end is connected to the drain electrode (colelctor electrode) of power amplifier tube 101;
One end of second electric capacity 109 is connected to the junction of the other end of the second inductance 112 and the first electric capacity 108, another End ground connection;
One end of first inductance 110 is connected to the other end of the first electric capacity 108 and the junction of capacitance 111, another End ground connection;
The other end of capacitance 111 is connected with load.
Further, broadband matching network 107 can be electric using two-stage low pass LC structure, i.e. the first electric capacity 108 and first Feel 110 positions to exchange, as shown in Figure 5.
Further, broadband matching network 107 can be electric using two-stage high-pass LC structure, i.e. the second inductance 112 and second Hold 109 positions to exchange, as shown in Figure 6.
This utility model also provides a kind of circuit parameter design of the radio-frequency power amplifier output matching circuit structure Method, which comprises the following steps:
Step a:It is determined that loading the resistance value of RL, the operating frequency of the radio-frequency power amplifier makes power amplifier tube 101 The resistance value and the inductance value of choke induction 102 of the optimum impedance Ropt of maximum voltage and current swing is exported simultaneously.Power The output maximum voltage of amplifier tube and current swing refer to voltage swing when can be output peak power in the case of current bias And current swing.
Step b:As shown in figure 3, Fig. 3 is equivalent circuit diagrams of the Fig. 2 at fundamental wave.Determine inside broadband matching network 107 The parameter of element, and the resistance value Jing broadband matching network 107 of load RL is converted into into admittance Y=Gopt jBx, then pass through The value of admittance Y calculates the value of equivalent capacity Ceff.
Step c:As shown in figure 4, Fig. 4 is equivalent circuit diagrams of the Fig. 2 under triple-frequency harmonics.By broadband matching network 107 etc. Imitate as inductance Lin, and according to choke induction 102 and the value of equivalent capacity Ceff, calculate equivalent inductance Lin and second harmonic The component parameters of network 104, and the parameter of the output capacitor 103 of power amplifier tube 101;Output capacitor 103 is by power 101 output capacitance Cout of amplifier tube is composed in parallel with on-chip capacitance Cdie, and is connected in parallel on drain electrode and the source electrode of power amplifier tube 101 Between, the parameter of on-chip capacitance Cdie is calculated according to the parameter of output capacitor 103.
Further, in step a, 102 obtaining value method of choke induction is the friendship for making choke induction 102 at the operating frequencies The optimum impedance Ropt of n times of flow impedance, wherein n are any nonnegative number.
Further, step b is specially:
The quality factor q of broadband matching network 107 is determined according to the bandwidth of operation of power amplifier tube 101, and then calculates true Fixed interim transfer resistance RT, RT are tried to achieve by following formula:
Equal resistance per square RI is calculated according to the quality factor q and interim transfer resistance RT, RI is tried to achieve by following formula:
According to the parameter that the quality factor q and equal resistance per square RI calculate 107 the inside element of broadband matching network respectively it is:
Wherein L1That is inductance 110, L2That is inductance 107, C1That is electric capacity 108, C2That is electric capacity 109;
Equivalent capacity Ceff is calculated according to the parameter of 107 the inside element of broadband matching network is:
Wherein, ω0For the angular frequency of correspondence operating frequency.
Further, step c is specially:
The computational methods of equivalent inductance Lin of the broadband matching network 107 under triple-frequency harmonics are:
Wherein, ω3=3 ω0
The component parameters computational methods of second harmonic network 104 are:
Wherein, Lcin=Lin//Lc, Ls2 are inductance 105, and Cs2 is electric capacity 106, and Lc is choke induction 102;
The output capacitor Cc of power amplifier tube 101, the i.e. capacitance of electric capacity 103 are expressed as:
Compare the size of output capacitor Cc and output capacitance Cout of power amplifier tube 101, if output capacitor Cc Larger, then the parameter of on-chip capacitance Cdie is:
Cdie=Cc-Cout
Otherwise return to step a, reselects matching network quality factor q, then recalculates.
The beneficial effects of the utility model:Output capacitance, second harmonic of this utility model by using power amplifier tube Network and broadband matching network realize impedance transformation, and the matching network realizes being in short-circuit condition under second harmonic, and it is right to enhance The inhibition of second harmonic;And be in open-circuit condition in triple-frequency harmonics, preferably using triple-frequency harmonics;So that power amplifier Output voltage waveforms closer to square wave, output current is closer to half-wave, therefore voltage waveform is less with current waveform lap, So as to substantially increase the whole efficiency of power amplifier;By using second harmonic and the Broadband Matching net with filtering characteristic Network, has carried out preferably inhibitory action, and has improve the linearity of power amplifier to second harmonic.This utility model is effectively The harmonic distortion of radio-frequency power amplifier output stage is reduced, the power efficiency of power amplifier is improved.
Description of the drawings
Fig. 1 is circuit theory diagrams of the present utility model.
Fig. 2 is the match circuit figure looked over toward load direction from Fig. 1 transistor outputs.
Fig. 3 is equivalent circuit diagrams of the Fig. 2 at fundamental wave.
Fig. 4 is equivalent circuit diagrams of the Fig. 2 under triple-frequency harmonics.
Fig. 5 is the circuit diagram of the two-stage low pass LC structure that the electric capacity 108 of Fig. 1 and 110 position of inductance are exchanged.
Fig. 6 is the circuit diagram of the two-stage high-pass LC structure that the inductance 112 of Fig. 1 and 109 position of electric capacity are exchanged.
Specific embodiment
Embodiment 1, as shown in Figures 1 to 4, a kind of radio-frequency power amplifier output matching circuit structure, the output matching Circuit includes power amplifier tube 101, choke induction 102, power amplifier tube output capacitor 103, second harmonic network 104 and Broadband matching network 107;Second harmonic network 104 is connected to drain electrode (colelctor electrode) other end of power amplifier tube 101 for one end The singly-terminal pair being composed in series by inductance 105 and electric capacity 106 of ground connection;Broadband matching network 107 is included by inductance 112, inductance 110, the band logical matching network that electric capacity 109 and electric capacity 108 are constituted, and capacitance 111;112 one end of inductance is connected to power The drain electrode (colelctor electrode) of amplifier tube 101;One end of electric capacity 109 is connected to the other end of inductance 112 and the junction of electric capacity 108, The other end is grounded;One end of inductance 110 is connected to the other end of electric capacity 108 and the junction of capacitance 111, another termination Ground;The other end of capacitance 111 is connected with load.
Embodiment 2, as shown in figure 5, compared with Example 1, broadband matching network 107 adopts two-stage low pass LC structure, i.e., The electric capacity 108 of embodiment 1 and 110 position of inductance are exchanged.
Embodiment 3, as shown in fig. 6, compared with Example 1, broadband matching network 107 adopts two-stage high-pass LC structure, i.e., The inductance 112 of embodiment 1 and 109 position of electric capacity are exchanged.

Claims (3)

1. a kind of radio-frequency power amplifier output matching circuit structure, it is characterised in that:The output matching circuit includes that power is put Big pipe (101), choke induction (102), power amplifier tube output capacitor (103), second harmonic network (104) and broadband Distribution network (107);
Second harmonic network (104) for one end be connected to power amplifier tube (101) drain electrode the other end ground connection by harmonic nests The singly-terminal pair that inductance (105) is composed in series with harmonic nests electric capacity (106);
Broadband matching network (107) includes by the second inductance (112), the first inductance (110), the second electric capacity (109) and first electric Hold the band logical matching network that (108) constitute, and capacitance (111);
Second inductance (112) one end is connected to the drain electrode of power amplifier tube (101);
One end of second electric capacity (109) is connected to the junction of the other end of the second inductance (112) and the first electric capacity (108), separately One end is grounded;
One end of first inductance (110) is connected to the other end of the first electric capacity (108) and the junction of capacitance (111), separately One end is grounded;
The other end of capacitance (111) is connected with load.
2. radio-frequency power amplifier output matching circuit structure according to claim 1, it is characterised in that:First electric capacity (108) and the first inductance (110) position is exchanged.
3. radio-frequency power amplifier output matching circuit structure according to claim 1, it is characterised in that:Second inductance (112) and the second electric capacity (109) position is exchanged.
CN201620335435.6U 2016-04-20 2016-04-20 RF power amplifier output matching circuit structure Expired - Fee Related CN206041939U (en)

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Application Number Priority Date Filing Date Title
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105811888A (en) * 2016-04-20 2016-07-27 广东工业大学 Radio frequency power amplifier output match circuit structure and designing method thereof
CN107425818A (en) * 2017-04-17 2017-12-01 东莞赛唯莱特电子技术有限公司 A kind of output matching circuit structure for improving radio-frequency power amplifier harmonic performance
CN108009319A (en) * 2017-11-13 2018-05-08 电子科技大学 A kind of system using the impedance solution space limited design broadband matching network
EP3672072A1 (en) * 2018-12-21 2020-06-24 NXP USA, Inc. Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105811888A (en) * 2016-04-20 2016-07-27 广东工业大学 Radio frequency power amplifier output match circuit structure and designing method thereof
CN107425818A (en) * 2017-04-17 2017-12-01 东莞赛唯莱特电子技术有限公司 A kind of output matching circuit structure for improving radio-frequency power amplifier harmonic performance
CN108009319A (en) * 2017-11-13 2018-05-08 电子科技大学 A kind of system using the impedance solution space limited design broadband matching network
CN108009319B (en) * 2017-11-13 2021-02-05 电子科技大学 System for designing broadband matching network by using limited impedance solution space
EP3672072A1 (en) * 2018-12-21 2020-06-24 NXP USA, Inc. Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture
US10742174B2 (en) 2018-12-21 2020-08-11 Nxp Usa, Inc. Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture

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CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170322

Termination date: 20180420