CN107305899A - A kind of semiconductor devices and preparation method thereof and electronic installation - Google Patents
A kind of semiconductor devices and preparation method thereof and electronic installation Download PDFInfo
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- CN107305899A CN107305899A CN201610255203.4A CN201610255203A CN107305899A CN 107305899 A CN107305899 A CN 107305899A CN 201610255203 A CN201610255203 A CN 201610255203A CN 107305899 A CN107305899 A CN 107305899A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 238000009434 installation Methods 0.000 title claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 65
- 238000000576 coating method Methods 0.000 claims abstract description 65
- 238000010276 construction Methods 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000011148 porous material Substances 0.000 claims abstract description 40
- 239000003292 glue Substances 0.000 claims abstract description 37
- 238000007711 solidification Methods 0.000 claims abstract description 25
- 230000008023 solidification Effects 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 14
- 238000001035 drying Methods 0.000 claims description 6
- 239000000835 fiber Substances 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 13
- 230000007547 defect Effects 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 63
- 239000011521 glass Substances 0.000 description 10
- 239000012212 insulator Substances 0.000 description 10
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- 239000000853 adhesive Substances 0.000 description 5
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- 239000007921 spray Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012536 packaging technology Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The present invention relates to a kind of semiconductor devices and preparation method thereof and electronic installation.Methods described includes：Wafer is provided, some spaced image sensor devices are formed with the wafer；Coating supporting construction is isolator formed in the top of the wafer and described image sensor device, pore structure is formed with to be formed between the coating supporting construction and the wafer in insulating space, and the coating supporting construction；Coating dries solidification glue and fills the pore structure in the coating supporting construction；The dry solidification glue in the pore structure is sprayed to the wafer by air gun in the top of the pore structure, to form the protection ring around described image sensor device.Methods described avoids the coating supporting construction (such as metal screen) and directly contacted with the wafer and the image sensor device, the problem of technical process causes wafer surface defects is avoided, the performance and yield of cmos image sensor is further improved.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of semiconductor devices and its
Preparation method and electronic installation.
Background technology
Generally, imaging sensor is the semiconductor devices that optical imagery is converted into electric signal.Figure
As sensor includes charge coupling device (CCD) and complementary metal oxide semiconductor
(CMOS) imaging sensor.
Because cmos image sensor (CIS) has improved manufacturing technology and characteristic, therefore
Semiconductor fabrication everyway concentrates on exploitation cmos image sensor.CMOS schemes
Picture sensor is manufactured using CMOS technology, and with lower power consumption, it is easier to realize high
Degree is integrated, produces smaller device, therefore, and cmos image sensor widely should
For various products, such as digital camera and digital camera.
It is described to protect that box dam glue (DAM) would generally be formed in cmos image sensors
Filter coating and the cmos device, but the technical process causes wafer surface defects non-
Chang Gao, is greatly affected the performance and yield of cmos image sensor.
Therefore, it is necessary to a kind of preparation method of new cmos image sensor is proposed, with
Solve existing technical problem.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will be specific real
Apply in mode part and be further described.The Summary of the present invention is not meant to
Attempt to limit the key feature and essential features of technical scheme claimed, less
Mean the protection domain for attempting to determine technical scheme claimed.
In order to overcome the problem of presently, there are, one aspect of the present invention provides a kind of semiconductor devices
Preparation method, methods described includes：
Wafer is provided, some spaced imaging sensor devices are formed with the wafer
Part；
Coating support is isolator formed in the top of the wafer and described image sensor device
Structure, to form insulating space, and institute between the coating supporting construction and the wafer
State in coating supporting construction and be formed with pore structure；
Coating dries solidification glue and fills the pore structure in the coating supporting construction；
In the top of the pore structure by air gun by the drying in the pore structure
Solidification glue is sprayed to the wafer, to form the protection around described image sensor device
Ring.
Alternatively, the pressure of the air gun is 0.19~0.24MPa.
Alternatively, the sprayed fiber concrete of the air gun is 180-220mm.
Alternatively, the jet velocity of the air gun is 85~210ml/Min.
Alternatively, the dry solidification glue includes box dam glue.
Alternatively, the coating supporting construction includes metal screen.
Alternatively, described image sensor device at least includes filter coating.
Alternatively, each described image sensor device includes some prisms being disposed adjacent and position
Filter coating below the prism.
Present invention also offers a kind of semiconductor devices, the semiconductor devices passes through the above method
Prepare.
Present invention also offers a kind of electronic installation, including above-mentioned semiconductor devices.
In summary, the present invention provides a kind of half to solve problem present in current technique
The preparation method of conductor device, after image sensor device is formed, in the graphical sensory
Formed above device device in coating supporting construction, and the coating supporting construction and be formed with hole knot
Structure；Then coating dries solidification glue and fills the pore structure in the coating supporting construction,
And sprayed the dry solidification glue in the pore structure to the wafer by air gun
On, to form the protection ring around described image sensor device.Methods described avoids described
Coat supporting construction (such as metal screen) and the wafer and the image sensor device are straight
Contact, it is to avoid the problem of technical process causes wafer surface defects, makes cmos image
The performance and yield of sensor are further improved.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.It is attached
Embodiments of the invention and its description are shown in figure, for explaining the principle of the present invention.
In accompanying drawing：
Fig. 1 shows the preparation method of semiconductor devices according to an embodiment of the present invention
Flow chart of steps；
Fig. 2 a-2c show a kind of diagrammatic cross-section of existing semiconductor device structure；
Fig. 3 shows the schematic diagram of electronic installation according to an embodiment of the present invention.
Embodiment
In the following description, a large amount of concrete details are given to provide to the present invention more
Thoroughly understand.It is, however, obvious to a person skilled in the art that of the invention
It can be carried out without one or more of these details.In other examples, in order to keep away
Exempt to obscure with the present invention, be not described for some technical characteristics well known in the art.
It should be appreciated that the present invention can be implemented in different forms, and it is not construed as office
It is limited to embodiments presented herein.On the contrary, providing these embodiments disclosure will be made thoroughly and complete
Entirely, and it will fully convey the scope of the invention to those skilled in the art.In the accompanying drawings,
For clarity, the size and relative size in Ceng He areas may be exaggerated.It is identical attached from beginning to end
Icon note represents identical element.
It should be understood that be referred to as when element or layer " ... on ", " with ... it is adjacent ", " being connected to "
Or when " being coupled to " other elements or layer, its can directly on other elements or layer, with
It is adjacent, be connected or coupled to other elements or layer, or there may be element or layer between two parties.
On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " being directly connected to "
Or when " being directly coupled to " other elements or layer, then in the absence of element or layer between two parties.Should
Understand, although can be used term first, second, third, etc. describe various elements, part,
Area, floor and/or part, these elements, part, area, floor and/or part should not be by these
Term is limited.These terms be used merely to distinguish element, part, area, floor or part with
Another element, part, area, floor or part.Therefore, do not depart from present invention teach that under,
First element discussed below, part, area, floor or part be represented by the second element, part,
Area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... it
Under ", " ... on ", " above " etc., can describe for convenience herein and by using from
And an element shown in figure or feature and other elements or the relation of feature are described.Should be bright
In vain, in addition to the orientation shown in figure, spatial relationship term be intended to also including the use of and operation
In device different orientation.If for example, the device upset in accompanying drawing, then, is described as
" below other elements " or " under it " or " under it " element or feature will be orientated
For other elements or feature " on ".Therefore, exemplary term " ... below " and " ...
Under " it may include upper and lower two orientations.Device, which can be additionally orientated, (to be rotated by 90 ° or other
Orientation) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as this hair
Bright limitation.Herein in use, " one " of singulative, " one " and " described/should "
It is also intended to include plural form, unless context is expressly noted that other mode.It is also to be understood that art
Language " composition " and/or " comprising ", when in this specification in use, determine the feature,
Integer, step, operation, the presence of element and/or part, but be not excluded for it is one or more its
Its feature, integer, step, operation, element, the presence or addition of part and/or group.
Herein in use, term "and/or" includes any and all combination of related Listed Items.
In order to thoroughly understand the present invention, detailed structure and step will be proposed in following description
Suddenly, to explain technical scheme proposed by the present invention.Presently preferred embodiments of the present invention is described in detail
It is as follows, but in addition to these detailed descriptions, the present invention can also have other embodiment.
Forming protection ring in the preparation method of semiconductor devices in current technique mainly includes two
Step, first is to be coated step, and second is print steps, wherein, in the coating step
Suddenly include：Wafer is provided, some spaced image sensings are formed with the wafer
Device device；The formation isolated in the top of the wafer and described image sensor device coats branch
Support structure, is formed with insulating space, and institute between the coating supporting construction and the wafer
State in coating supporting construction and be formed with pore structure；By extruding the painting in the print steps
Covering supporting construction makes the coating supporting construction deform upon and directly be contacted with the wafer,
And the coating material is transferred on the wafer while contact.
In the above-mentioned methods due to it is described coating supporting construction deform upon and with the wafer
Directly contact, so as to cause wafer surface defects very high, make cmos image sensor
Performance and yield are greatly affected.
There is provided a kind of semiconductor in order to solve above mentioned problem present in current technique by the present invention
The preparation method of device, methods described includes：
Wafer is provided, some spaced imaging sensor devices are formed with the wafer
Part；
The formation isolated in the top of the wafer and described image sensor device coats support
Structure, insulating space is formed between the coating supporting construction and the wafer, and described
Pore structure is formed with coating supporting construction；
Coating dries solidification glue and fills the pore structure in the coating supporting construction；
In the top of the pore structure by air gun by the drying in the pore structure
Solidification glue is sprayed to the wafer, to form the protection around described image sensor device
Ring.
Wherein, the drying in the pore structure is consolidated by air gun in the process
Change glue to spray to the wafer, to form the protection ring around described image sensor device.
Methods described avoids the coating supporting construction (such as metal screen) and the wafer and institute
State image sensor device directly to contact, it is to avoid technical process causes asking for wafer surface defects
Topic, makes the performance and yield of cmos image sensor further improve.
Embodiment one
Presence in view of the above problems, the present invention provides a kind of semiconductor devices and its preparation side
Method, elaborates to the semiconductor devices and preparation method of the present invention below in conjunction with the accompanying drawings.Its
In, Fig. 1 shows the step of the preparation method of semiconductor devices according to an embodiment of the present invention
Rapid flow chart；Fig. 2 a-2c show a kind of diagrammatic cross-section of existing semiconductor device structure.
As shown in figure 1, the preparation method of the semiconductor devices includes：
Step S1：Wafer is provided, some spaced images are formed with the wafer
Sensor component；
Step S2：Isolator formed in the top of the wafer and described image sensor device
Supporting construction is coated, isolates sky to be formed between the coating supporting construction and the wafer
Between, and it is formed with pore structure in the coating supporting construction；
Step S3：Coating dries solidification glue and fills the hole in the coating supporting construction
Structure；
Step S4：In the top of the pore structure by air gun by the pore structure
The dry solidification glue is sprayed to the wafer, to be formed around described image sensor device
Protection ring.
The semiconductor devices of the present invention is described in detail below with reference to Fig. 2 a-2c.
First, step one is performed there is provided wafer 201, and some phases are formed with the wafer
The image sensor devices being mutually spaced.
Specifically, as shown in Figure 2 a, wherein, the wafer 201 can be following is previously mentioned
At least one of material：Silicon, silicon-on-insulator (SOI), it is laminated silicon on insulator
(SSOI) SiGe (S-SiGeOI), germanium on insulator SiClx, are laminated on insulator
And germanium on insulator (GeOI) etc. (SiGeOI).
Various cmos devices are formed with the front of the wafer.Specifically, described
The various active devices formed in device wafers, the active device includes but is not limited to crystal
Pipe, diode etc., in addition, various interconnection structures can also be formed on the active device,
The interconnection structure includes some metal levels and the through hole between some metal levels,
The interconnection structure is used for and cmos device formation electrical connection.
Wherein, the preparation method of the cmos device and the interconnection structure can be selected
Various methods commonly used in the art, it is not limited to a certain, no longer do further detailed herein
Thin description.
Rewiring layer can also be further formed on cmos device is stated.Specifically, wherein
The material and forming method for rerouting layer can select method commonly used in the art, herein
Repeat no more.
In order to simplify the technical process in the present invention, the yield and performance of device, reduction by half are improved
The production cost of conductor device, no longer from TSV formation electrical connections, but selects and reroutes
Layer, then forms salient point above, is finally realized and encapsulated from bump process (bumping),
Methods described is simpler, and can improve the yield of device.
Some spaced image sensor devices 202 are also formed with the wafer.
Described image sensor device 202 includes some prisms being disposed adjacent in this step
With the filter coating below the prism.
Alternatively, in this step by adhesive glue and glass by image sensor devices and described
The back side bonding of device wafers.
Wherein, the glass is located above the colored filter and prism, wherein the bonding
Glue selects the adhesive glue commonly used in packaging technology, and the glass selects the glass commonly used in packaging technology
Glass.
Step 2 is performed, the shape isolated in the top of the wafer and described image sensor device
Into coating supporting construction 203, it is formed between the coating supporting construction 203 and the wafer
Pore structure 204 is formed with insulating space, and the coating supporting construction.
Specifically, as shown in Figure 2 a, the coating supporting construction 203 is selected in this step
Metal screen, wherein, the structure that the metal screen can be commonly used from ability is not limited to
In certain.
Wherein, pore structure 204, the pore structure pattern are formed with the coating supporting construction
For the target pattern of formation, for example, it surround around described image sensor device.
Further, not in contact with both between the coating supporting construction 203 and the wafer
Between be formed with certain space, i.e., it is described coating supporting construction 203 suspend is arranged at the crystalline substance
Round top.
Alternatively, the distance between coating supporting construction 203 and described wafer is more than eventually forming
Protection ring height, the height of described image sensor device 202 is also have to be larger than certainly,
As shown in Figure 2 a.
Step 3 is performed, coating is dried solidification glue 205 and filled in the coating supporting construction
The pore structure.
Specifically, as shown in Figure 2 b, pass through in this step in the coating supporting construction
The uniform dry solidification glue 205 of applicator a layer thickness and in this process filling are described
Pore structure.
Alternatively, the dry solidification glue 205 includes box dam glue.
The usual adhesive force of box dam glue is good, and intensity is high, excellent ageing-resistant performance.In desiccation
It can be coated before, there is larger intensity after desiccation, be solid state, have
The features such as protection against the tide, waterproof, resistance to ozone, radiation hardness, weather-resistant, and electric property is good,
Chemical stability is good.Electronics is typically used as, electrical equipment, the bonding of Instrument Elements plays protection against the tide,
It is shockproof, insulation, sealing function.
Step 4 is performed, in the top of the pore structure by air gun (air gun) by institute
The dry solidification glue stated in pore structure is sprayed to the wafer, to be formed around the figure
As the protection ring of sensor component.
Specifically, as shown in Figure 2 c, the pressure of the air gun is in this step
0.19~0.24MPa.
Alternatively, the sprayed fiber concrete of the air gun is 180-220mm, such as described air
The sprayed fiber concrete of spray gun is 200mm.
Alternatively, the jet velocity of the air gun is 85~210ml/Min.
In this step by air gun (air gun) by the drying in the pore structure
Solidification glue is sprayed to the wafer, and to form protection ring, the protection ring is around described image
Sensor component is set.
Further, the height of the protection ring is more than the height of described image sensor device, with
Protect the cmos device and described image sensor device.
Further, protection ring structure annular in shape, described image sensor device is enclosed in
Wherein, to protect described image sensor device.
So far, the correlation step of the preparation method of the semiconductor devices of the embodiment of the present invention is completed
Introduction.In addition methods described can also include other correlation steps, and here is omitted.And
And, in addition to the foregoing steps, the preparation method of the present embodiment can also be in each above-mentioned step
Among or different steps between include other steps, these steps can pass through current technique
In various techniques realize that here is omitted.
The present invention provides a kind of semiconductor devices to solve problem present in current technique
Preparation method, formed image sensor device after, on the image sensor device
It is square into coating supporting construction, and it is described coating supporting construction in be formed with pore structure；Then
Coating dries solidification glue and fills the pore structure in the coating supporting construction, and passes through sky
Gas spray gun sprays the dry solidification glue in the pore structure to the wafer, to be formed
Around the protection ring of described image sensor device.Methods described avoids the coating support knot
Structure (such as metal screen) is directly contacted with the wafer and the image sensor device, is kept away
The problem of technical process causes wafer surface defects is exempted from, has made the property of cmos image sensor
Can further it be improved with yield.
Embodiment two
The present invention provides semiconductor devices prepared by a kind of preceding method, including：
Wafer；
Image sensor devices, on the wafer and it is some it is spaced set；
Protection ring, is set on the wafer around described image sensor device.
Specifically, wherein, the wafer 201 can be in the following material being previously mentioned at least
It is a kind of：Silicon, silicon-on-insulator (SOI), stacking silicon (SSOI) on insulator, on insulator
It is laminated on SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and insulator
Germanium (GeOI) etc..
Various cmos devices are formed with the front of the wafer.Specifically, described
The various active devices formed in device wafers, the active device includes but is not limited to crystal
Pipe, diode etc., in addition, various interconnection structures can also be formed on the active device,
The interconnection structure includes some metal levels and the through hole between some metal levels,
The interconnection structure is used for and cmos device formation electrical connection.
Wherein, the preparation method of the cmos device and the interconnection structure can be selected
Various methods commonly used in the art, it is not limited to a certain, no longer do further detailed herein
Thin description.
Rewiring layer can also be further formed on cmos device is stated.Specifically, wherein
The material and forming method for rerouting layer can select method commonly used in the art, herein
Repeat no more.
In order to simplify the technical process in the present invention, the yield and performance of device, reduction by half are improved
The production cost of conductor device, no longer from TSV formation electrical connections, but selects and reroutes
Layer, then forms salient point above, is finally realized and encapsulated from bump process (bumping),
Methods described is simpler, and can improve the yield of device.
Some spaced image sensor devices 202 are also formed with the wafer.
The each described image sensor device of described image sensor device 202 in this step
Including some prisms being disposed adjacent and the filter coating below the prism.
Alternatively, in this step by adhesive glue and glass by image sensor devices and described
The back side bonding of device wafers.
Wherein, the glass is located above the colored filter and prism, wherein the bonding
Glue selects the adhesive glue commonly used in packaging technology, and the glass selects the glass commonly used in packaging technology
Glass.
Wherein, the protection ring is set around described image sensor device.
Further, the height of the protection ring is more than the height of described image sensor device, with
Protect the cmos device and described image sensor device.
Further, protection ring structure annular in shape, described image sensor device is enclosed in
Wherein, to protect described image sensor device.
The preparation method of the protection ring is in the wafer and described image sensor device
The formation coating supporting construction 203 of top isolation, the coating supporting construction 203 and the crystalline substance
It is formed between circle in insulating space, and the coating supporting construction and is formed with pore structure 204.
Coating dries solidification glue and fills the pore structure in the coating supporting construction.Institute
The top of pore structure is stated by air gun (air gun) by the drying in the pore structure
Solidification glue is sprayed to the wafer, to form the protection around described image sensor device
Ring.
Wherein, the pressure of the air gun is 0.19~0.24MPa.
Alternatively, the sprayed fiber concrete of the air gun is 180-220mm, such as described air
The sprayed fiber concrete of spray gun is 200mm.
Alternatively, the jet velocity of the air gun is 85~210ml/Min.
By air gun by described in the pore structure in semiconductor devices of the present invention
Dry solidification glue is sprayed to the wafer, to form the guarantor around described image sensor device
Retaining ring.The device avoids the coating supporting construction (such as metal screen) and the crystalline substance
Circle and the image sensor device are directly contacted, it is to avoid technical process causes crystal column surface to lack
The problem of falling into, makes the performance and yield of cmos image sensor further improve.
Embodiment three
An alternative embodiment of the invention provides a kind of electronic installation, and it includes semiconductor devices,
The semiconductor devices is the semiconductor devices in previous embodiment two, or according to embodiment one
Semiconductor devices preparation method obtained by semiconductor devices.
The electronic installation, can be mobile phone, tablet personal computer, notebook computer, net book, trip
Gaming machine, television set, VCD, DVD, navigator, camera, video camera, recording pen,
Any electronic product such as MP3, MP4, PSP or equipment or with above-mentioned semiconductor
The intermediate products of device, for example：Cell phone mainboard with the integrated circuit etc..
Due to including semiconductor devices have higher performance, the electronic installation equally have it is upper
State advantage.
Wherein, Fig. 3 shows the example of mobile phone handsets.Mobile phone handsets 300 are set
It is equipped with the display portion 302 being included in shell 301, operation button 303, external connection terminal
Mouth 304, loudspeaker 305, microphone 306 etc..
Wherein described mobile phone handsets include foregoing semiconductor devices, or according to embodiment one
Semiconductor devices obtained by the preparation method of described semiconductor devices, it includes wafer；Figure
As sensor component, on the wafer and some spaced set；Protection ring, position
Set in surrounding described image sensor device on the wafer.Semiconductor devices of the present invention
In the dry solidification glue in the pore structure is sprayed to the wafer by air gun
On, to form the protection ring around described image sensor device.The device avoids described
Coat supporting construction (such as metal screen) and the wafer and the image sensor device are straight
Contact, it is to avoid the problem of technical process causes wafer surface defects, makes cmos image
The performance and yield of sensor are further improved.
The present invention is illustrated by above-described embodiment, but it is to be understood that, it is above-mentioned
The purpose that embodiment is only intended to illustrate and illustrated, and be not intended to limit the invention to described
Scope of embodiments in.In addition it will be appreciated by persons skilled in the art that not office of the invention
It is limited to above-described embodiment, more kinds of modification can also be made according to the teachings of the present invention and repaiied
Change, these variants and modifications are all fallen within scope of the present invention.The present invention's
Protection domain is defined by the appended claims and its equivalent scope.
Claims (10)
1. a kind of preparation method of semiconductor devices, it is characterised in that methods described includes：
Wafer is provided, some spaced imaging sensor devices are formed with the wafer
Part；
Coating support is isolator formed in the top of the wafer and described image sensor device
Structure, to form insulating space, and institute between the coating supporting construction and the wafer
State in coating supporting construction and be formed with pore structure；
Coating dries solidification glue and fills the pore structure in the coating supporting construction；
In the top of the pore structure by air gun by the drying in the pore structure
Solidification glue is sprayed to the wafer, to form the protection around described image sensor device
Ring.
2. according to the method described in claim 1, it is characterised in that the air gun
Pressure is 0.19~0.24MPa.
3. according to the method described in claim 1, it is characterised in that the air gun
Sprayed fiber concrete is 180-220mm.
4. according to the method described in claim 1, it is characterised in that the air gun
Jet velocity is 85~210ml/Min.
5. according to the method described in claim 1, it is characterised in that the dry solidification glue
Including box dam glue.
6. according to the method described in claim 1, it is characterised in that the coating support knot
Structure includes metal screen.
7. according to the method described in claim 1, it is characterised in that described image sensor
Device at least includes filter coating.
8. the method according to claim 1 or 7, it is characterised in that each figure
As sensor component includes some prisms being disposed adjacent and the optical filtering below the prism
Film.
9. a kind of semiconductor devices, it is characterised in that the semiconductor devices will by right
One of 1 to 8 methods described is asked to prepare.
10. a kind of electronic installation, it is characterised in that including partly leading as claimed in claim 9
Body device.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6297071B1 (en) * | 1998-07-22 | 2001-10-02 | Eastman Kodak Company | Method of making planar image sensor color filter arrays |
| US20080291303A1 (en) * | 2006-08-10 | 2008-11-27 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and camera |
| CN101540271A (en) * | 2008-02-15 | 2009-09-23 | 美高C&C有限公司 | Mask for forming a thermal sprayed protrusion, method for forming a thermal sprayed protrusion using the mask and method for manufacturing a substrate supporting apparatus using the mask |
| US20100051790A1 (en) * | 2008-09-04 | 2010-03-04 | Jin Ho Park | Image Sensor and Method for Manufacturing the Same |
| CN101743125A (en) * | 2007-06-14 | 2010-06-16 | 麻省理工学院 | The method and apparatus that is used for the controlling diaphragm deposition |
| CN102637713A (en) * | 2012-03-31 | 2012-08-15 | 江阴长电先进封装有限公司 | Method for packaging image sensor comprising metal micro-bumps |
| CN105324511A (en) * | 2013-06-21 | 2016-02-10 | 夏普株式会社 | Process for producing organic electroluminescent element, and organic electroluminescent display device |
-
2016
- 2016-04-22 CN CN201610255203.4A patent/CN107305899B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6297071B1 (en) * | 1998-07-22 | 2001-10-02 | Eastman Kodak Company | Method of making planar image sensor color filter arrays |
| US20080291303A1 (en) * | 2006-08-10 | 2008-11-27 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and camera |
| CN101743125A (en) * | 2007-06-14 | 2010-06-16 | 麻省理工学院 | The method and apparatus that is used for the controlling diaphragm deposition |
| CN101540271A (en) * | 2008-02-15 | 2009-09-23 | 美高C&C有限公司 | Mask for forming a thermal sprayed protrusion, method for forming a thermal sprayed protrusion using the mask and method for manufacturing a substrate supporting apparatus using the mask |
| US20100051790A1 (en) * | 2008-09-04 | 2010-03-04 | Jin Ho Park | Image Sensor and Method for Manufacturing the Same |
| CN102637713A (en) * | 2012-03-31 | 2012-08-15 | 江阴长电先进封装有限公司 | Method for packaging image sensor comprising metal micro-bumps |
| CN105324511A (en) * | 2013-06-21 | 2016-02-10 | 夏普株式会社 | Process for producing organic electroluminescent element, and organic electroluminescent display device |
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