CN107293517B - Substrate comprising conductive pattern, preparation method of substrate and display device - Google Patents
Substrate comprising conductive pattern, preparation method of substrate and display device Download PDFInfo
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- CN107293517B CN107293517B CN201710547799.XA CN201710547799A CN107293517B CN 107293517 B CN107293517 B CN 107293517B CN 201710547799 A CN201710547799 A CN 201710547799A CN 107293517 B CN107293517 B CN 107293517B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
Abstract
The embodiment of the invention provides a substrate comprising a conductive pattern, a preparation method of the substrate and a display device, relates to the technical field of display, and can prevent the upper surface of an insulating layer from being uneven due to the fact that the insulating layer covers a first conductive pattern. A method of preparing a substrate comprising a conductive pattern, comprising: forming a metal film on the bearing layer, and forming a photoresist pattern on the metal film through gluing, exposing and developing; performing ion implantation on one side of the bearing layer on which the metal film is formed so as to form a barrier layer in the middle of the part, which is not covered by the photoresist pattern, of the metal film; removing the photoresist pattern; and carrying out insulation treatment on one side of the bearing layer on which the metal film is formed, so that the part, which is not shielded by the barrier layer, in the metal film is converted into an insulating layer, and the part, which is shielded by the barrier layer, in the metal film is a first conductive pattern.
Description
Technical Field
The invention relates to the technical field of display, in particular to a substrate containing a conductive pattern, a preparation method of the substrate and a display device.
Background
In manufacturing the array substrate, a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes are generally sequentially formed on a substrate.
Specifically, a grid electrode is formed on a substrate, and meanwhile, a grid line is formed; forming a gate insulating layer on the substrate on which the gate electrode and the gate line are formed, wherein the gate electrode and the gate line are patterns with certain thicknesses, so that the surface of the gate insulating layer at the position corresponding to the gate electrode and the gate line is uneven; an active layer is formed subsequently, and the surface of the active layer is uneven in the same way; furthermore, a conductive film is formed on the substrate on which the active layer is formed, the conductive film is formed by sputtering, and a protrusion exists on the surface of the gate insulating layer, so that the problem of non-uniformity of the surface of the conductive film is easily caused, that is, the conductive film is looser at a climbing position compared with other positions, which may cause disconnection of the source electrode, the drain electrode and the data line at the climbing position, and affect normal use of the array substrate.
Disclosure of Invention
Embodiments of the present invention provide a substrate including a conductive pattern, a method of manufacturing the same, and a display device, which can prevent an upper surface of an insulating layer from being uneven due to the insulating layer covering a first conductive pattern.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
in a first aspect, there is provided a method of preparing a substrate including a conductive pattern, comprising: forming a metal film on the bearing layer, and forming a photoresist pattern on the metal film through gluing, exposing and developing; performing ion implantation on one side of the bearing layer on which the metal film is formed so as to form a barrier layer in the middle of the part, which is not covered by the photoresist pattern, of the metal film; removing the photoresist pattern; and carrying out insulation treatment on one side of the bearing layer on which the metal film is formed, so that the part, which is not shielded by the barrier layer, in the metal film is converted into an insulating layer, and the part, which is shielded by the barrier layer, in the metal film is a first conductive pattern.
Preferably, the upper surface of the bearing layer is a flat surface.
Preferably, the ion implantation of the side of the carrier layer where the metal thin film is formed to form a barrier layer in the middle of the portion of the metal thin film not covered by the photoresist pattern includes: and carrying out germanium ion implantation on one side of the bearing layer on which the metal film is formed so as to form a barrier layer in the middle of the part, which is not covered by the photoresist pattern, of the metal film.
Preferably, the material of the metal thin film is aluminum and/or an aluminum-titanium alloy composed of aluminum and titanium, wherein the mass ratio of titanium in the aluminum-titanium alloy is 0.5% -5%.
And carrying out insulation treatment on one side of the bearing layer on which the metal film is formed, wherein the insulation treatment comprises the following steps: and performing oxygen ion implantation on one side of the bearing layer on which the metal film is formed, so that the part of the metal film which is not shielded by the barrier layer is converted into an insulating layer mainly composed of aluminum oxide.
In a second aspect, a substrate including a conductive pattern is provided, which includes a carrier layer, a first conductive pattern, a barrier layer, and an insulating layer sequentially disposed on the carrier layer; the barrier layer is superposed with the orthographic projection of the first conductive pattern on the bearing layer; the sum of the thicknesses of the first conductive pattern, the barrier layer and the part of the insulating layer, which is positioned on the barrier layer, is equal to the thickness of the other part of the insulating layer; the first conductive pattern is made of metal, and the insulating layer is made of a compound of the metal.
Preferably, the upper surface of the bearing layer is a flat surface.
Preferably, the material of the first conductive pattern is aluminum and/or an aluminum-titanium alloy composed of aluminum and titanium, wherein the mass ratio of titanium in the aluminum-titanium alloy is 0.5% -5%; the thickness of the barrier layer is
Preferably, the substrate including the conductive pattern further includes a second conductive pattern disposed on the insulating layer, the second conductive pattern crossing at least a part of a boundary of the first conductive pattern.
Further preferably, the first conductive pattern includes a gate electrode and a gate line; the insulating layer is a gate insulating layer; the second conductive pattern includes a source electrode, a drain electrode, and a data line.
In a third aspect, a display device is provided, which includes the substrate including the conductive pattern of the second aspect.
The embodiment of the invention provides a substrate containing a conductive pattern and a preparation method thereof, wherein a metal film is formed on a bearing layer, a photoresist pattern is formed on the metal film, so that when ion implantation is carried out on one side of the bearing layer, on which the metal film is formed, a barrier layer is formed only in the middle of the part, located in a second area, of the metal film, and then insulation treatment is carried out on one side, on which the metal film is formed, of the bearing layer, so that the part, not shielded by the barrier layer, of the metal film is converted into an insulating layer, the part, shielded by the barrier layer, of the metal film is a first conductive pattern, in the process, as the thicknesses of the metal film at all positions are equal, the sum of the thicknesses of the part, located in the second area, of the insulating layer, the barrier layer and the first conductive pattern, converted by the metal film and the thickness of the part, located in the first area, of the insulating, compared with the prior art, the invention can prevent the upper surface of the insulating layer from being uneven because the insulating layer covers the first conductive pattern.
Therefore, when the second conductive pattern is formed on the side of the insulating layer far away from the bearing layer, if the second conductive pattern crosses at least part of the boundary of the first conductive pattern, the second conductive pattern does not have a climbing phenomenon due to the pattern of the first conductive pattern, and the disconnection of the second conductive pattern can be avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for manufacturing a substrate including a conductive pattern according to an embodiment of the present invention;
fig. 2(a) is a first schematic diagram illustrating a process of manufacturing a substrate including a conductive pattern according to an embodiment of the present invention;
fig. 2(b) is a schematic view illustrating a second process of manufacturing a substrate including a conductive pattern according to an embodiment of the present invention;
fig. 2(c) is a schematic view illustrating a third process of manufacturing a substrate including a conductive pattern according to an embodiment of the present invention;
fig. 2(d) is a schematic view illustrating a fourth process of manufacturing a substrate including a conductive pattern according to an embodiment of the present invention;
fig. 3 is a first schematic diagram of a substrate including a conductive pattern according to an embodiment of the present invention;
fig. 4 is a second schematic diagram of a substrate including a conductive pattern according to an embodiment of the present invention.
Reference numerals:
10-a carrier layer; 11-a conductive film; 12-a photoresist pattern; 21-a first conductive pattern; 22-a barrier layer; 23-an insulating layer; 24-a second conductive pattern.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a method for manufacturing a substrate including a conductive pattern, as shown in fig. 1, specifically including the following steps:
s10, as shown in fig. 2(a), a metal film 11 is formed on the carrier layer 10, and the metal film 11 is subjected to glue application, exposure, and development to form a photoresist pattern 12.
The substrate including the conductive pattern may be an array substrate.
Here, the lower surface of the metal thin film 11 is in direct contact with the upper surface of the carrier layer 10, and the carrier layer 10 may be a substrate, or may also be a buffer layer disposed on the substrate, which is not limited herein.
On the basis, the upper surface of the metal film 11 is parallel to the upper surface of the bearing layer 10, and the thicknesses of the metal film 11 at all positions on the bearing layer 10 are equal.
The surface of the metal film 11, which is in contact with the bearing layer 10, is a lower surface of the metal film 11, and the upper surface of the metal film 11 is a surface of the metal film 11, which is opposite to the lower surface; the surface of the carrier layer 10 in contact with the metal thin film 11 is the upper surface of the carrier layer 10.
First, the material of the metal thin film 11 is not limited as long as it can conduct electricity before the metal thin film 11 is subjected to insulation treatment; after the metal thin film 11 is subjected to an insulating treatment, the compound thereof may be an insulating material, and the compound obtained after the insulating treatment may transmit light.
Secondly, the thickness of the metal film 11 is not limited, and the thickness of the metal film 11 is set according to the thickness of the first conductive pattern, the barrier layer and the insulating layer to be formed in the second region in the actual manufacturing process.
Here, in the substrate including the conductive pattern, a region corresponding to the photoresist pattern 12 is a first region, and a region other than the first region is a second region.
Third, the thickness of the photoresist pattern 12 is not limited as long as it can function to block the ion implantation in S20, i.e., the photoresist pattern 12 can protect the portion of the metal thin film 11 located in the first region from the ion implantation process in S20. For example, the thickness of the photoresist pattern 12 may be in the range of 1.7 to 2.8 μm.
S20, as shown in fig. 2(b), ion implantation is performed on the side of the carrier layer 10 on which the metal thin film 11 is formed, to form the barrier layer 22 in the middle of the portion of the metal thin film 11 not covered by the photoresist pattern 12.
The barrier layer 22 may be formed by ion implantation using an ion implantation device (ion implanter), ions forming the barrier layer 22 enter the metal film 11 and penetrate into the gap of the metal film 11, and the thickness of the barrier layer 22 may be made as thin as possible by adjusting the energy and ion implantation time of the ion implantation device, so that the total thickness of the second region is not affected by the barrier layer 22, that is, the sum of the thicknesses of the portion of the metal film 11 located in the second region and the barrier layer 22 is equal to the thickness of the portion of the metal film 11 located in the first region.
First, the material of the barrier layer 22 is not limited as long as the material can perform an insulating function, and does not affect the conductivity of the insulated metal thin film 11 or the insulating property of the insulating layer to be formed.
Second, the barrier layer 22 is formed in the middle of the portion of the metal thin film 11 not covered by the photoresist pattern 12, which means: first, the barrier layer 22 is formed in the portion of the metal film 11 located in the second region, on the basis of which the barrier layer 22 is located in the middle of the metal film 11, that is, with respect to the lower surface of the metal film 11, the barrier layer 22 may be located on the side of the metal film 11 close to the upper surface and not in contact with the upper surface; alternatively, the barrier layer 22 may be located on a side of the metal thin film 11 close to the lower surface, and not in contact with the lower surface, with respect to the upper surface of the metal thin film 11; alternatively, the barrier layer 22 is located at the same distance from the upper and lower surfaces of the metal thin film 11.
Of course, in the present invention, the depth of the barrier layer 22 in the metal thin film 11 should be determined in consideration of both the thickness of the first conductive pattern to be formed and the thickness of the portion of the insulating layer to be formed in the second region.
Here, the depth of the barrier layer 22 in the metal thin film 11 means: the distance from the upper surface of the metal thin film 11 to the barrier layer 22.
S30, as shown in fig. 2(c), the photoresist pattern 12 is removed.
Here, the photoresist pattern 12 may be removed using a lift-off process.
S40, as shown in fig. 2(d), the side of the carrier layer 10 on which the metal thin film 11 is formed is subjected to an insulation process so that the portion of the metal thin film 11 not covered by the barrier layer 22 is converted into the insulating layer 23, and the portion of the metal thin film 11 covered by the barrier layer 22 is the first conductive pattern 21.
The form of the insulating treatment is not limited, and it is sufficient that the portion of the metal thin film 11 not covered by the barrier layer 22 is converted into the insulating layer 23 after the insulating treatment, and the conductivity of the portion of the metal thin film 11 covered by the barrier layer 22 is not affected.
The embodiment of the invention provides a method for preparing a substrate comprising a conductive pattern, which comprises the steps of forming a metal film 11 on a bearing layer 10 and forming a photoresist pattern 12 on the metal film 11, so that when ion implantation is carried out on one side of the bearing layer 10, where the metal film 11 is formed, a barrier layer 22 is formed only in the middle of the part, located in a second area, of the metal film 11, and then insulation treatment is carried out on one side, where the metal film 11 is formed, of the bearing layer 10, so that the part, not shielded by the barrier layer 22, of the metal film 11 is converted into an insulating layer 23, the part, shielded by the barrier layer 22, of the metal film 11 is a first conductive pattern 21, in the process, as thicknesses of the metal film 11 at all positions are equal, thicknesses of the part, located in the second area, of the barrier layer 22 and the first conductive pattern 21, of the insulating layer 23 converted by the metal film 11 are equal, the thickness of the portion of the insulating layer 23 in the first region, which is always equal to the thickness of the portion of the insulating layer 23 converted from the metal thin film 11, is smaller than that of the prior art, and the upper surface of the insulating layer 23 is not uneven because the insulating layer 23 covers the first conductive pattern 21.
Thus, when the second conductive pattern is formed on the side of the insulating layer 23 away from the carrier layer 10, if the second conductive pattern crosses at least part of the boundary of the first conductive pattern 21, the second conductive pattern does not have a climbing phenomenon due to the pattern of the first conductive pattern 21, and thus the second conductive pattern can be prevented from being broken.
Wherein, the surface of the insulating layer 23 directly contacting the carrier layer 10 and the first conductive pattern 21 is a lower surface of the insulating layer 23, and the upper surface of the insulating layer 23 is a surface of the insulating layer 23 opposite to the lower surface; at least a partial boundary of the first conductive pattern 21, including: one or more boundaries, or a portion of one or more boundaries, of the first conductive pattern 21.
Preferably, the upper surface of the carrier layer 10 is a flat surface.
In the embodiment of the present invention, since the upper surface of the carrier layer 10 is a flat surface, the upper surface of the metal thin film 11 formed on the carrier layer 10 is also a flat surface, and the upper surface of the insulating layer 23 formed later is a flat surface.
Preferably, the ion implantation of the side of the carrier layer 10 where the metal thin film 11 is formed to form the barrier layer 22 in the middle of the portion of the metal thin film 11 not covered by the photoresist pattern 12 includes: germanium (Ge) ion implantation is performed to the side of the carrier layer 10 where the metal thin film 11 is formed to form a barrier layer 22 in the middle of the portion of the metal thin film 11 not covered by the photoresist pattern 12.
In the embodiment of the present invention, germanium has a large atomic radius, and is commonly used as the barrier layer 22 in the semiconductor industry, and germanium has a heavy relative atomic mass (72.6), so that the thickness of the barrier layer 22 formed by germanium is easily controlled during ion implantation, and germanium ions have no influence on the conductivity of the conductive thin film 11 and the insulation of the insulating layer 23 formed subsequently.
Preferably, the material of the metal thin film 11 is aluminum and/or an aluminum-titanium alloy composed of aluminum and titanium, wherein the mass ratio of titanium in the aluminum-titanium alloy is 0.5% -5%; the method for insulating the side of the carrier layer 10 on which the metal thin film 11 is formed includes: the side of the support layer 10 on which the metal thin film 11 is formed is subjected to oxygen ion implantation so that the portion of the metal thin film 11 not shielded by the barrier layer 22 is converted into an insulating layer 23 mainly composed of alumina.
When the metal thin film 11 is made of aluminum and the aluminum-titanium alloy, the aluminum may be located on a side of the aluminum-titanium alloy close to the carrier layer 10, or on a side of the aluminum-titanium alloy away from the carrier layer 10, and since both the aluminum and the aluminum-titanium alloy can be used as conductive materials before being subjected to insulation treatment, and can be converted into the insulating layer 23 after being subjected to insulation treatment, the thickness difference between the aluminum and the aluminum-titanium alloy is not limited.
Here, oxygen ion implantation may be performed using an ion implantation apparatus, and oxygen ions enter the metal thin film 11 and then rapidly chemically react with aluminum and/or the aluminum-titanium alloy to generate aluminum oxide (Al)2O3) Or alumina and titanium oxide (TiO)2) The mixture of (1), wherein the aluminum and/or the oxide of the aluminum titanium alloy are both insulating materials and can transmit light, and therefore, can be used as the insulating layer 23.
In the embodiment of the present invention, aluminum and titanium are common metal materials, and the aluminum-titanium alloy are easily subjected to insulation treatment, and in the case that the metal thin film 11 is aluminum and/or the aluminum-titanium alloy, the metal thin film can be chemically reacted with oxygen ions, so that a portion of the metal thin film 11 which is not shielded by the barrier layer 22 is converted into the insulating layer 23 mainly composed of aluminum oxide, and the process is mature.
Preferably, after the photoresist pattern 12 is formed and before the ion implantation is performed on the side of the carrier layer 10 on which the metal thin film 11 is formed, the method further includes: the photoresist pattern 12 is cured, so that the hardness of the photoresist pattern 12 can be further improved, and the photoresist pattern is prevented from falling off in the ion implantation process, so that ions forming the barrier layer 22 enter the part, located in the first region, of the conductive film 11.
Wherein, the curing temperature can be within the range of 200-300 ℃, and the curing time can be 15-45 minutes.
Preferably, after the insulating treatment is performed on the side of the carrier layer 10 on which the metal thin film 11 is formed, the method further includes: by annealing the carrier layer 10 on which the insulating layer 23 is formed, the metal compound used as the insulating layer 23 can be made uniform and dense.
Wherein the temperature of the annealing treatment can be within the range of 100-150 ℃, and the time of the annealing treatment can be 30-45 minutes.
An embodiment of the present invention provides a substrate including a conductive pattern, as shown in fig. 2(d), including a carrier layer 10, a first conductive pattern 21, a barrier layer 22, and an insulating layer 23 sequentially disposed on the carrier layer 10; the barrier layer 22 coincides with the orthographic projection of the first conductive pattern 21 on the carrier layer 10; the sum of the thicknesses of the first conductive pattern 21, the barrier layer 22, and the portion of the insulating layer 23 located on the barrier layer 22 is equal to the thickness of the other portion of the insulating layer 23; the material of the first conductive pattern 21 is a metal, and the material of the insulating layer 23 is a metal compound.
The substrate including the conductive pattern may be an array substrate.
First, the thickness and the sum of the thicknesses of the first conductive pattern 21, the barrier layer 22, and the insulating layer 23 in the second region are not limited to practical applications.
Second, the material of the barrier layer 22 is not limited as long as the material can perform an insulating function, and does not affect the conductivity of the first conductive pattern 21 and the insulation of the insulating layer 23.
The embodiment of the invention provides a substrate comprising a conductive pattern, which comprises a bearing layer 10, a first conductive pattern 21, a barrier layer 22 and an insulating layer 23, wherein the first conductive pattern 21, the barrier layer 22 and the insulating layer 23 are sequentially arranged on the bearing layer 10, and the orthographic projection of the barrier layer 22 and the first conductive pattern 21 on the bearing layer 10 is superposed, so that compared with the prior art, the upper surface of the insulating layer 23 is not uneven because the insulating layer 23 covers the first conductive pattern 21 because the sum of the thicknesses of the parts, positioned in the second area, of the first conductive pattern 21, the barrier layer 22 and the insulating layer 23 is equal to the thickness of the part, positioned in the first area, of the insulating layer 23.
Wherein, the surface of the insulating layer 23 directly contacting the carrier layer 10 and the first conductive pattern 21 is a lower surface of the insulating layer 23, and the upper surface of the insulating layer 23 is a surface of the insulating layer 23 opposite to the lower surface.
Preferably, the upper surface of the carrier layer 10 is a flat surface.
In the embodiment of the present invention, since the upper surface of the carrier layer 10 is a flat surface, the upper surface of the metal thin film 11 formed on the carrier layer 10 is also a flat surface, and the upper surface of the insulating layer 23 formed later is a flat surface.
Preferably, the material of the first conductive pattern 21 is aluminum and/or an aluminum-titanium alloy composed of aluminum and titanium, wherein the mass ratio of titanium in the aluminum-titanium alloy is 0.5% to 5%.
As such, the material of the insulating layer 23 may be aluminum, or an oxide of aluminum and the aluminum-titanium alloy.
Here, when the material of the metal thin film 11 is aluminum and the aluminum-titanium alloy, the aluminum may be located on a side of the aluminum-titanium alloy close to the carrier layer 10 or on a side of the aluminum-titanium alloy away from the carrier layer 10, and since both the aluminum and the aluminum-titanium alloy may be used as the conductive material and both the aluminum and the oxide of the aluminum-titanium alloy may be used as the insulating layer 23, the difference in thickness between the aluminum and the aluminum-titanium alloy is not limited.
In the embodiment of the invention, aluminum and titanium are common metal materials, and the oxides thereof are transparent insulating materials and are easily obtained.
Preferably, the barrier layer 22 has a thickness of
Wherein, ion implantation can be performed by using an ion implantation apparatus to form the barrier layer 22, and the thickness of the barrier layer 22 can be determined by adjusting the energy and the ion implantation time of the ion implantation apparatus.
In the embodiment of the present invention, the thickness of the barrier layer 22 is set to be in the range of
When the substrate containing the conductive pattern is applied to a display panel as an array substrate, the thin design of the display panel is facilitated.
Preferably, as shown in fig. 3 and 4, the substrate including the conductive pattern further includes a second conductive pattern 24 disposed on the insulating layer 23, and the second conductive pattern 24 crosses at least a part of the boundary of the first conductive pattern 21.
Here, at least a part of the boundary of the first conductive pattern 21 includes: one or more boundaries, or a portion of one or more boundaries, of the first conductive pattern 21.
Illustratively, as shown in fig. 3, the first conductive pattern 21 is a gate electrode and a gate line (not shown), the insulating layer 23 is a gate insulating layer, and the second conductive pattern 24 is a source electrode, a drain electrode, and a data line (not shown), wherein the source electrode and the drain electrode respectively cross at least a portion of a boundary of the gate electrode, and the data line crosses at least a portion of a boundary of the gate line.
Here, the sum of the thicknesses of the gate electrode and the gate line, the barrier layer 22, and the portion of the gate insulating layer located in the second region may be
The barrier layer 22 may have a thickness of
The depth of the barrier layer 22 is
When the substrate containing the conductive pattern is an array substrate, the upper surface of the gate insulating layer is not uneven because the gate insulating layer covers the grid electrode and the grid line, so that the source electrode, the drain electrode and the data line which are formed subsequently do not have the climbing phenomenon because of the graphs of the grid line and the grid electrode, and the disconnection of the source electrode, the drain electrode and the data line can be avoided.
As shown in fig. 4, the first conductive pattern 21 is a source electrode, a drain electrode, and a data line (not shown), and the second conductive pattern 24 may be a common electrode, wherein the common electrode crosses at least a partial boundary of the source electrode, the drain electrode, and the data line.
When the substrate including the conductive pattern is an array substrate, the insulating layer 23 covering the source electrode, the drain electrode and the data line is not uneven due to the fact that the insulating layer covers the source electrode, the drain electrode and the data line, so that the common electrode formed subsequently does not climb due to the patterns of the source electrode, the drain electrode and the data line, and the disconnection of the common electrode can be avoided.
Of course, the substrate including the conductive pattern may also be applied to other processes to prevent the second conductive pattern 24 from climbing on the first conductive pattern 21, and further prevent the second conductive pattern 24 from being disconnected.
An embodiment of the invention provides a display device, which includes the substrate including the conductive pattern described in any of the foregoing embodiments.
The display device may be a liquid crystal display, or an OLED (Organic Light-emitting diode) display. For example, the display device may be any product or component with a display function, such as a liquid crystal display, a liquid crystal television, a digital camera, a mobile phone, or a tablet computer.
Embodiments of the present invention provide a display device having the same technical effects as the substrate including the conductive pattern, which are not described herein again.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method of making a substrate comprising a conductive pattern, comprising:
forming a metal film on the bearing layer, and forming a photoresist pattern on the metal film through gluing, exposing and developing;
performing ion implantation on one side of the bearing layer on which the metal film is formed so as to form a barrier layer in the middle of the part, which is not covered by the photoresist pattern, of the metal film;
removing the photoresist pattern;
and carrying out insulation treatment on one side of the bearing layer on which the metal film is formed, so that the part, which is not shielded by the barrier layer, in the metal film is converted into an insulating layer, and the part, which is shielded by the barrier layer, in the metal film is a first conductive pattern.
2. The method of claim 1, wherein the upper surface of the carrier layer is a flat surface.
3. The manufacturing method according to claim 1 or 2, wherein performing ion implantation on a side of the carrier layer on which the metal thin film is formed to form a barrier layer in a middle portion of a portion of the metal thin film not covered by the photoresist pattern comprises:
and carrying out germanium ion implantation on one side of the bearing layer on which the metal film is formed so as to form a barrier layer in the middle of the part, which is not covered by the photoresist pattern, of the metal film.
4. The preparation method according to claim 1 or 2, wherein the material of the metal thin film is aluminum and/or an aluminum-titanium alloy composed of aluminum and titanium, wherein the mass ratio of titanium in the aluminum-titanium alloy is 0.5-5%;
and carrying out insulation treatment on one side of the bearing layer on which the metal film is formed, wherein the insulation treatment comprises the following steps:
and performing oxygen ion implantation on one side of the bearing layer on which the metal film is formed, so that the part of the metal film which is not shielded by the barrier layer is converted into an insulating layer mainly composed of aluminum oxide.
5. A substrate containing a conductive pattern is characterized by comprising a bearing layer, a first conductive pattern, a barrier layer and an insulating layer, wherein the first conductive pattern, the barrier layer and the insulating layer are sequentially arranged on the bearing layer; the barrier layer is superposed with the orthographic projection of the upper surface of the first conductive pattern on the bearing layer; the sum of the thicknesses of the first conductive pattern, the barrier layer and the part of the insulating layer, which is positioned on the barrier layer, is equal to the thickness of the other part of the insulating layer;
the first conductive pattern is made of metal, and the insulating layer is made of a compound of the metal.
6. The substrate of claim 5, wherein the upper surface of the carrier layer is a flat surface.
7. The substrate comprising a conductive pattern according to claim 5 or 6, wherein the material of the first conductive pattern is aluminum and/or an aluminum-titanium alloy composed of aluminum and titanium, wherein the mass ratio of titanium in the aluminum-titanium alloy is 0.5-5%;
the thickness of the barrier layer is
8. The substrate containing a conductive pattern according to claim 5 or 6, further comprising a second conductive pattern disposed on the insulating layer, the second conductive pattern crossing at least a part of a boundary of the first conductive pattern.
9. The substrate comprising a conductive pattern according to claim 8, wherein the first conductive pattern comprises a gate electrode and a gate line; the insulating layer is a gate insulating layer; the second conductive pattern includes a source electrode, a drain electrode, and a data line.
10. A display device comprising the substrate comprising a conductive pattern according to any one of claims 5 to 9.
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