CN107291138A - One kind includes frequency compensated low-dropout regulator - Google Patents
One kind includes frequency compensated low-dropout regulator Download PDFInfo
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- CN107291138A CN107291138A CN201710690998.6A CN201710690998A CN107291138A CN 107291138 A CN107291138 A CN 107291138A CN 201710690998 A CN201710690998 A CN 201710690998A CN 107291138 A CN107291138 A CN 107291138A
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- circuit
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- semiconductor
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
Abstract
Frequency compensated low-dropout regulator is included the present invention relates to integrated chip technology field, more particularly to one kind.One kind in the present invention includes frequency compensated low-dropout regulator, including reference voltage generating circuit, first order amplifier circuit, second level amplifier circuit, power tube, resistor voltage divider circuit, auxiliary circuit, load and external capacitor, the output end of the reference voltage generating circuit connects the input of first order amplifier circuit, first order amplifier is sequentially connected second level amplifier circuit and power tube, the power tube connects resistor voltage divider circuit, external capacitor and load, the output of the resistor voltage divider circuit as first order amplifier circuit input, the second level amplifier circuit is also associated with the auxiliary circuits such as short-circuit protection circuit.The present invention is improved on the basis of conventional low difference linear constant voltage regulator, is reduced power consumption, is improved circuit stability.
Description
Technical field
Frequency compensated low voltage difference voltage stabilizing is included the present invention relates to integrated chip technology field, more particularly to one kind
Device.
Background technology
Low pressure difference linear voltage regulator, abbreviation LDO (low dropout voltage), due to its high conversion efficiency, volume
Small, low noise, outward element are few, the low feature of price, related in the portable system by cell powers and communication
On electronic product, used by substantial amounts of.Because LDO loops are cascaded by two-stage or casacade multi-amplifier, loop is set to produce two
Or more than two limits, and because the error of supply voltage, operating temperature and manufacturing process causes direct current in amplifiers at different levels
The position of operating point shifts, so as to have influence on the stability of system.Traditional low-dropout regulator needs external one big
Electric capacity, to maintain the stability of LDO circuit, and large bulk capacitance needs to occupy larger circuit layout area.Conventional low pressure
Poor voltage-stablizer performance when load is varied widely is unstable, while the movement of zero pole point also can increase the power consumption of circuit.
The content of the invention
The invention aims to solve, low pressure difference linear voltage regulator stability in the prior art is not high enough, power consumption is high
Problem there is provided a kind of more low-power consumption, more high stability include frequency compensated low-dropout regulator.
Frequency compensated low-dropout regulator, including reference voltage generating circuit, first are included the invention provides one kind
Level amplifier circuit, second level amplifier circuit, power tube, resistor voltage divider circuit, auxiliary circuit, load and external capacitor, institute
The output end for stating reference voltage generating circuit connects the input of first order amplifier circuit, and first order amplifier is sequentially connected the
Two-stage amplifier circuit and power tube, the power tube connection resistor voltage divider circuit, external capacitor and load, the resistance point
The output of volt circuit is as the input of first order amplifier circuit, and it is electric that the second level amplifier circuit is also associated with short-circuit protection
The auxiliary circuits such as road.
Wherein, the first order amplifier circuit includes metal-oxide-semiconductor M0, M1, M2, M3, M4, M5, M6, M7, M8, the MOS
Pipe M0 grid connection voltage VB1, source electrode connection supply voltage VIN, drain electrode connection metal-oxide-semiconductor M1 and M2 source electrode；M2 grid
Connect the output voltage VREF of reference voltage generating circuit；Metal-oxide-semiconductor M7, M8 source electrode connection supply voltage VIN, grid are all connected with
Voltage VB1, drain electrode connects M5, M6 drain electrode respectively；M5, M6 grid connection voltage VB2, source electrode connect M3, M4 leakage respectively
Pole；M3, M4 grid are connected and connect M7 drain electrode, source grounding；M3, M4 drain electrode connect M1, M2 drain electrode respectively；Institute
Stating second level amplifier circuit includes metal-oxide-semiconductor M9, M10, M11, M12, compensation resistance Rz and compensating electric capacity Cz, metal-oxide-semiconductor M10 source
Pole connects supply voltage VIN, drain electrode connection M9 drain electrode, grid connection compensating electric capacity Cz and compensation resistance Rz one end, compensation
The other end connection supply voltage VIN, compensation resistance Rz of the electric capacity other end connection M10 drain electrode and M11 grid；Metal-oxide-semiconductor
M9 grid connects M6 drain electrode, source ground；Metal-oxide-semiconductor M11 source electrode connection supply voltage VIN, drain electrode connection M12 drain electrode
With power tube MP control end；M12 grid connects M3, M4 grid, source ground；The source electrode connection electricity of the power tube MP
Source voltage VIN, drain electrode connection external capacitor Cp one end and load RL one end, external capacitor Cp and load the RL other end are equal
Ground connection；The resistor voltage divider circuit includes the resistance Rf1 and Rf2 of series connection, the grid connection resistance Rf1 of the metal-oxide-semiconductor M1 and
Rf2 one end, resistance Rf2 other end ground connection, resistance Rf1 other end connection power tube MP drain electrode, i.e. output end VOUT.
Above-mentioned low-dropout regulator also includes electric capacity Cm, electric capacity Cm one end connection metal-oxide-semiconductor M6 grid, other end connection power tube MP
Drain electrode.Above-mentioned metal-oxide-semiconductor M0, M1, M2, M7, M8, M10, M11 are PMOS, and above-mentioned metal-oxide-semiconductor M3, M4, M5, M6, M9, M12 are
NMOS tube.
It is provided by the present invention a kind of comprising frequency compensated low-dropout regulator, efficiently solve low in the prior art
The problem of pressure difference linear voltage regulator stability is not high enough, power consumption is high, is changed on the basis of conventional low difference linear constant voltage regulator
Enter, reduce power consumption, improve circuit stability.
Brief description of the drawings
Fig. 1 includes frequency compensated low-dropout regulator circuit theory schematic diagram for one kind that the present invention is provided.
Fig. 2 includes frequency compensated low-dropout regulator main body circuit structural representation for one kind that the present invention is provided.
Fig. 3 includes frequency compensated low-dropout regulator frequency loop performance diagram for what the present invention was provided.
Embodiment
Frequency compensated low-dropout regulator is included the invention provides one kind, to make the purpose of the present invention, technical scheme
And advantage is clearer, clear and definite, the present invention is described in more detail for the embodiment that develops simultaneously referring to the drawings.It should be appreciated that this
The specific embodiment of place description is not intended to limit the present invention only to explain the present invention.
As shown in fig. 1, it is a kind of to include frequency compensated low-dropout regulator, including reference voltage generating circuit, the first order
Amplifier circuit, second level amplifier circuit, power tube, resistor voltage divider circuit, auxiliary circuit, load and external capacitor, it is described
The output end of reference voltage generating circuit connects the input of first order amplifier circuit, and first order amplifier is sequentially connected second
Level amplifier circuit and power tube, the power tube connection resistor voltage divider circuit, external capacitor and load, the electric resistance partial pressure
The output of circuit is as the input of first order amplifier circuit, and the second level amplifier circuit is also associated with short-circuit protection circuit
Deng auxiliary circuit.
Fig. 2 is the present invention comprising frequency compensated low-dropout regulator agent structure schematic diagram (reference voltage generation electricity
Road and auxiliary circuit are not drawn into), wherein, the first order amplifier circuit include metal-oxide-semiconductor M0, M1, M2, M3, M4, M5, M6,
M7, M8, the grid connection voltage VB1 of the metal-oxide-semiconductor M0, source electrode connection supply voltage VIN, drain electrode connection metal-oxide-semiconductor M1's and M2
Source electrode；M2 grid connects the output voltage VREF of reference voltage generating circuit；Metal-oxide-semiconductor M7, M8 source electrode connection supply voltage
VIN, grid is all connected with voltage VB1, and drain electrode connects M5, M6 drain electrode respectively；M5, M6 grid connection voltage VB2, source electrode difference
Connect M3, M4 drain electrode；M3, M4 grid are connected and connect M7 drain electrode, source grounding；M3, M4 drain electrode are connected respectively
M1, M2 drain electrode；The second level amplifier circuit includes metal-oxide-semiconductor M9, M10, M11, M12, compensation resistance Rz and compensating electric capacity
Cz, metal-oxide-semiconductor M10 source electrode connection supply voltage VIN, drain electrode connection M9 drain electrode, grid connection compensating electric capacity Cz and compensation electricity
Hinder Rz one end, the other end connection supply voltage VIN, compensation resistance Rz of the compensating electric capacity other end connection M10 drain electrode and
M11 grid；Metal-oxide-semiconductor M9 grid connects M6 drain electrode, source ground；Metal-oxide-semiconductor M11 source electrode connection supply voltage VIN, leakage
Pole connection M12 drain electrode and power tube MP control end；M12 grid connects M3, M4 grid, source ground；The power
Pipe MP source electrode connection supply voltage VIN, drain electrode connection external capacitor Cp one end and load RL one end, external capacitor Cp and
The load RL other end is grounded；The resistance Rf1 and Rf2 that include connecting of the resistor voltage divider circuit, the grid of the metal-oxide-semiconductor M1
Pole connection resistance Rf1 and Rf2 one end, resistance Rf2 other end ground connection, resistance Rf1 other end connection power tube MP leakage
Pole, i.e. output end VOUT.Above-mentioned low-dropout regulator also includes electric capacity Cm, and electric capacity Cm one end connects metal-oxide-semiconductor M6 grid, separately
One end connection power tube MP drain electrode.Above-mentioned metal-oxide-semiconductor M0, M1, M2, M7, M8, M10, M11 be PMOS, above-mentioned metal-oxide-semiconductor M3,
M4, M5, M6, M9, M12 are NMOS tube.
It is above-mentioned include frequency compensated low-dropout regulator circuit in, after circuit start, reference voltage is quickly set up,
Output constantly rises with the rising of input, and when output reaches setting value, the feedback voltage produced by resistor voltage divider circuit connects
The reference voltage value closely inputted, now amplifier the reference voltage difference of feedback voltage and input is amplified, then through power
Pipe is amplified to output, so as to form negative-feedback, it is ensured that output voltage stabilization is in setting value.Now, compensation resistance Rz and compensation electricity
Hold Cz and constitute frequency compensated circuit, be arranged on the inside of second level amplifier circuit, and without the extra power consumption of consumption.In circuit
In the case of full load, because pole-zero cancellation can produce the phase margin close to 90 degree, so as to improve the steady of whole circuit
It is qualitative.
Fig. 3 be the present invention provide include frequency compensated low-dropout regulator frequency loop characteristic curve simulation result
Figure.Simulation result is shown, in the case of normal load, because pole-zero cancellation generates the decay of phase, with reason above
It is basically identical by analyzing, with more preferable stability.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved or converted according to the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect scope.
Claims (3)
1. one kind includes frequency compensated low-dropout regulator, it is characterised in that put including reference voltage generating circuit, the first order
Big device circuit, second level amplifier circuit, power tube, resistor voltage divider circuit, auxiliary circuit, load and external capacitor, the base
The output end of quasi- voltage generation circuit connects the input of first order amplifier circuit, and first order amplifier is sequentially connected the second level
Amplifier circuit and power tube, the power tube connection resistor voltage divider circuit, external capacitor and load, the electric resistance partial pressure electricity
The output on road is as the input of first order amplifier circuit, and the second level amplifier circuit is also associated with short-circuit protection circuit etc.
Auxiliary circuit.
2. it is as claimed in claim 1 a kind of comprising frequency compensated low-dropout regulator, it is characterised in that the first order is put
Big device circuit includes metal-oxide-semiconductor M0, M1, M2, M3, M4, M5, M6, M7, M8, and the grid of the metal-oxide-semiconductor M0 connects voltage VB1, source electrode
Connect supply voltage VIN, drain electrode connection metal-oxide-semiconductor M1 and M2 source electrode；M2 grid connects the output of reference voltage generating circuit
Voltage VREF；Metal-oxide-semiconductor M7, M8 source electrode connection supply voltage VIN, grid are all connected with voltage VB1, and drain electrode connects M5, M6 respectively
Drain electrode；M5, M6 grid connection voltage VB2, source electrode connect M3, M4 drain electrode respectively；M3, M4 grid are connected and connect M7
Drain electrode, source grounding；M3, M4 drain electrode connect M1, M2 drain electrode respectively；The second level amplifier circuit includes MOS
Pipe M9, M10, M11, M12, compensation resistance Rz and compensating electric capacity Cz, metal-oxide-semiconductor M10 source electrode connection supply voltage VIN, drain electrode connect
Connect one end of M9 drain electrode, grid connection compensating electric capacity Cz and compensation resistance Rz, the other end connection supply voltage of compensating electric capacity
VIN, compensation resistance the Rz other end connection M10 drain electrode and M11 grid；Metal-oxide-semiconductor M9 grid connects M6 drain electrode, source electrode
Ground connection；Metal-oxide-semiconductor M11 source electrode connection supply voltage VIN, drain electrode connection M12 drain electrode and power tube MP control end；M12's
Grid connects M3, M4 grid, source ground；The source electrode connection supply voltage VIN of the power tube MP, the external electricity of drain electrode connection
Hold Cp one end and load RL one end, external capacitor Cp and load the RL other end are grounded；The resistor voltage divider circuit
Resistance Rf1 and Rf2 including series connection, grid connection the resistance Rf1 and Rf2 of the metal-oxide-semiconductor M1 one end, resistance Rf2's is another
End ground connection, resistance Rf1 other end connection power tube MP drain electrode, i.e. output end VOUT.Above-mentioned low-dropout regulator also includes
Electric capacity Cm, electric capacity Cm one end connection metal-oxide-semiconductor M6 grid, other end connection power tube MP drain electrode.
3. it is as claimed in claim 2 a kind of comprising frequency compensated low-dropout regulator, it is characterised in that above-mentioned metal-oxide-semiconductor M0,
M1, M2, M7, M8, M10, M11 are PMOS, and above-mentioned metal-oxide-semiconductor M3, M4, M5, M6, M9, M12 are NMOS tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710690998.6A CN107291138A (en) | 2017-08-13 | 2017-08-13 | One kind includes frequency compensated low-dropout regulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710690998.6A CN107291138A (en) | 2017-08-13 | 2017-08-13 | One kind includes frequency compensated low-dropout regulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107291138A true CN107291138A (en) | 2017-10-24 |
Family
ID=60106003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710690998.6A Pending CN107291138A (en) | 2017-08-13 | 2017-08-13 | One kind includes frequency compensated low-dropout regulator |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114879794A (en) * | 2022-05-25 | 2022-08-09 | 西安微电子技术研究所 | On-chip capacitor implementation circuit for LDO frequency compensation and LDO circuit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101140478A (en) * | 2007-09-04 | 2008-03-12 | 北京时代民芯科技有限公司 | Low pressure difference linearity voltage stabilizer for enhancing performance by amplifier embedded compensation network |
| US20140191739A1 (en) * | 2013-01-07 | 2014-07-10 | Samsung Electronics Co., Ltd. | Low drop-out regulator |
| CN104750148A (en) * | 2013-12-31 | 2015-07-01 | 北京兆易创新科技股份有限公司 | Low-dropout regulator |
| CN105867506A (en) * | 2016-04-14 | 2016-08-17 | 中国电子科技集团公司第二十四研究所 | LDO (low dropout regulator) with internal reference voltage |
| CN106354186A (en) * | 2015-07-21 | 2017-01-25 | 炬芯（珠海）科技有限公司 | Low-voltage-difference linear voltage stabilizer |
-
2017
- 2017-08-13 CN CN201710690998.6A patent/CN107291138A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101140478A (en) * | 2007-09-04 | 2008-03-12 | 北京时代民芯科技有限公司 | Low pressure difference linearity voltage stabilizer for enhancing performance by amplifier embedded compensation network |
| US20140191739A1 (en) * | 2013-01-07 | 2014-07-10 | Samsung Electronics Co., Ltd. | Low drop-out regulator |
| CN104750148A (en) * | 2013-12-31 | 2015-07-01 | 北京兆易创新科技股份有限公司 | Low-dropout regulator |
| CN106354186A (en) * | 2015-07-21 | 2017-01-25 | 炬芯（珠海）科技有限公司 | Low-voltage-difference linear voltage stabilizer |
| CN105867506A (en) * | 2016-04-14 | 2016-08-17 | 中国电子科技集团公司第二十四研究所 | LDO (low dropout regulator) with internal reference voltage |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114879794A (en) * | 2022-05-25 | 2022-08-09 | 西安微电子技术研究所 | On-chip capacitor implementation circuit for LDO frequency compensation and LDO circuit |
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Application publication date: 20171024 |
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