CN107272961B - 一种显示面板及显示装置 - Google Patents
一种显示面板及显示装置 Download PDFInfo
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- CN107272961B CN107272961B CN201710523323.2A CN201710523323A CN107272961B CN 107272961 B CN107272961 B CN 107272961B CN 201710523323 A CN201710523323 A CN 201710523323A CN 107272961 B CN107272961 B CN 107272961B
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- G—PHYSICS
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- G—PHYSICS
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- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/225—Measuring circuits therefor
- G01L1/2262—Measuring circuits therefor involving simple electrical bridges
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- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract
本发明实施例公开了一种显示面板及显示装置。所述显示面板包括:显示区和围绕所述显示区的非显示区;所述显示面板包括至少一个半导体压力传感器,设置于所述非显示区;所述半导体压力传感器为面状,所述半导体压力传感器设置有镂空区域。本发明实施例提高了压力传感器的压力检测精度,提升了用户体验。
Description
技术领域
本发明实施例涉及显示技术,尤其涉及一种显示面板及显示装置。
背景技术
目前,带有触控功能的显示面板作为一种信息输入工具被广泛应用于手机、平板电脑、公共场所大厅的信息查询机等各种显示产品中。这样,用户只需用手指触摸触控显示面板上的标识就能够实现对该电子设备的操作,消除了用户对其他输入设备(如键盘和鼠标等)的依赖,使人机交互更为简易。
为了更好地满足用户需求,通常在触控显示面板中设置有用于检测用户触摸触控显示面板时触控压力大小的压力传感器,使其不仅能够采集触控位置信息,而且能够采集触控压力大小,以丰富触控显示技术的应用范围。然而现有的压力传感器的压力检测精度不高,影响用户体验。
发明内容
本发明提供一种显示面板及显示装置,以提高压力传感器的压力检测精度,提升用户体验。
第一方面,本发明实施例提供了一种显示面板,所述显示面板包括:显示区和围绕所述显示区的非显示区;
所述显示面板包括至少一个半导体压力传感器,设置于所述非显示区;所述半导体压力传感器为面状,所述半导体压力传感器设置有镂空区域。
第二方面,本发明实施例还提供了一种显示装置,所述显示装置包括本发明任意实施例所述的显示面板。
本发明实施例通过在半导体压力传感器上设置镂空区域,使得半导体压力传感器等效成的四个等效电阻,增加惠斯通电桥对压力的灵敏度,从而提高半导体压力传感器的压力检测精度,另外通过设置镂空区域,使得半导体压力传感器的散热效果更好,减小温度对压力检测的影响。
附图说明
图1是本发明实施例提供的一种显示面板的示意图;
图2是本发明实施例提供的一种半导体压力传感器的等效示意图;
图3是本发明实施例提供的又一种显示面板的示意图;
图4是本发明实施例提供的一种半导体压力传感器的示意图;
图5是图4中半导体压力传感器的等效电路图;
图6是本发明实施例提供的又一种半导体压力传感器的示意图;
图7是本发明实施例提供的又一种半导体压力传感器的示意图;
图8是本发明实施例提供的又一种显示面板的示意图;
图9是本发明实施例提供的又一种半导体压力传感器的示意图;
图10是图8中显示面板沿剖面线A1-A2的剖面图;
图11a是本发明实施例提供的又一种显示面板的示意图;
图11b是图11a中显示面板沿剖面线B1-B2的剖面图;
图12a是本发明实施例提供的又一种显示面板的示意图;
图12b是图12a中显示面板沿剖面线C1-C2的剖面图;
图13是本发明实施例提供的又一种显示面板的示意图;
图14是本发明实施例提供的一种显示装置的示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步的详细说明。可以理解的是,此处所描述的具体实施例仅仅用于解释本发明,而非对本发明的限定。另外还需要说明的是,为了便于描述,附图中仅示出了与本发明相关的部分而非全部结构。
本实施例提供了一种显示面板,图1是本发明实施例提供的一种显示面板的示意图,参考图1,显示面板包括:显示区10和围绕显示区的非显示区20;
显示面板包括至少一个半导体压力传感器30,设置于非显示区20;半导体压力传感器30为面状,半导体压力传感器30设置有镂空区域310。
图2是本发明实施例提供的一种半导体压力传感器的等效示意图。参见图2,半导体压力传感器30一般设置有四个接线端,即第一电源信号输入端Vin1、第二电源信号输入端Vin2、第一感应信号测量端Vout1和第二感应信号测量端Vout2,半导体压力传感器30可以等效为一个惠斯通电桥,该惠斯通电桥包括四个等效电阻,分别为等效电阻Ra、等效电阻Rb、等效电阻Rc和等效电阻Rd,其中第二电源信号输入端Vin2和第一感应信号测量端Vout1之间的区域为等效电阻Ra,第二电源信号输入端Vin2和第二感应信号测量端Vout2之间的区域为等效电阻Rb,第一电源信号输入端Vin1和第一感应信号测量端Vout1之间的区域为等效电阻Rd,第一电源信号输入端Vin1和第二感应信号测量端Vout2之间的区域为等效电阻Rc。当向第一电源信号输入端Vin1和第二电源信号输入端Vin2输入偏置电压信号时,惠斯通电桥中各支路均有电流通过。此时,按压显示面板时,显示面板发生形变,半导体压力传感器30发生形变,其内部等效电阻Ra、等效电阻Rb、等效电阻Rc和等效电阻Rd中至少一个的阻抗发生变化,从而使得半导体压力传感器30的第一感应信号测量端Vout1和第二感应信号测量端Vout2输出的压感检测信号之差与无按压时压力传感器13的第一感应信号测量端Vout1和第二感应信号测量端Vout2输出的压感检测信号之差不同,据此,可以确定触控压力的大小。
具体的,参考图2,对于未设置镂空区域的半导体压力传感器30,半导体压力传感器30的中央区域,即四个等效电阻之间的区域,与四个等效电阻连接,在实际检测压力过程中,使得四个等效电阻相互影响,影响惠斯通电桥的工作特性,从而降低了半导体压力传感器30的压力检测精度。通过在半导体压力传感器30上设置镂空区域,使得等效电阻Ra、等效电阻Rb、等效电阻Rc和等效电阻Rd相互独立,增加惠斯通电桥对压力的灵敏度,从而提高压力检测精度,另外通过设置镂空区域,使得半导体压力传感器30的散热效果更好,减小温度对压力检测的影响。
图3是本发明实施例提供的又一种显示面板的示意图,可选的,参考图3,显示面板还包括:
驱动电路40,用于为半导体压力传感器30提供偏置电压;
位于显示区10同一侧的各半导体压力传感器30的第一电源信号输入端Vin1均与驱动电路40的第一信号输出端41电连接,位于显示区10同一侧的各半导体压力传感器30的第二电源信号输入端Vin2均与驱动电路40的第二信号输出端42电连接。
具体的,驱动电路40通过电源信号线43与半导体压力传感器30电连接,由于电源信号线43具有一定的长度,其电阻较大,导致电源信号线43分压较大,影响传输到压力传感器20的偏置电压,从而可能影响半导体压力传感器30的压力检测精度。通过设置镂空区域,增大了等效电阻Ra、等效电阻Rb、等效电阻Rc和等效电阻Rd的阻值,增大半导体压力传感器30的分压,保证半导体压力传感器30具有较大的偏置电压,提高了压力检测精度。
另外,可以将位于显示区10同一侧的各半导体压力传感器30的第一电源信号输入端Vin1连接在一起,并通过同一根电源信号线43连接到驱动电路40的第一信号输出端41,将显示区10同一侧的各半导体压力传感器30的第二电源信号输入端Vin2连接在一起,并通过同一根电源信号线43连接到驱动电路40的第二信号输出端42,这样可以减少电源信号线43的数量,从而减少在非显示区20的布线数量,有利于显示面板的窄边框,并且电避免了在非显示区20设置的走线数量较多,电源信号线43与非显示区20设置的其他走线相互干扰。
图4是本发明实施例提供的一种半导体压力传感器的示意图。可选的,参考图4,镂空区域310的几何中心D1与半导体压力传感器30的外部轮廓图形的几何中心重合D2。
这样设置,使得半导体压力传感器30的形状分布较为均匀,四个等效电阻的阻值分布较为均匀,有利于半导体压力传感器30对显示面板不同方向形变的检测。
可选的,参考图4,半导体压力传感器30的外部轮廓为至少包括四个边的多边形,包括第一边31、第二边32、第三边33和第四边34;第一边31和第二边32之间间隔多边形的至少一个边,第三33边和第四边34之间间隔多边形的至少一个边;
半导体压力传感器30包括位于第一边31的第一电源信号输入端Vin1和位于第二边32的第二电源信号输入端Vin2,用于向半导体压力传感器30输入偏置电压信号;
半导体压力传感器30还包括位于第三边33的第一感应信号测量端Vout1和位于第四边34的第二感应信号测量端Vout2,用于从半导体压力传感器30输出压感检测信号。
具体的,半导体压力传感器30的外部轮廓可以为四边形、五边形、六边形等多边形,图4中仅示例性的示出了半导体压力传感器30为四边形的情况,并非对本发明的限定。
图5是图4中半导体压力传感器的等效电路图,可选的,参考图4和图5,半导体压力传感器30为轴对称图形。
具体的,通过设置半导体压力传感器30为轴对称图形,由于对称轴35两侧半导体压力传感器30的形状相同,使得对称轴35两侧的等效电阻分别相等,示例性的,如4和图5所示,对称轴35垂直于半导体压力传感器30的第二边32和第一边31,且第三边33和第四边34相对于对称轴35对称,此时,等效电阻Ra等于等效电阻Rb,等效电阻Rd等于等效电阻Rc,则在未施加压力时,Ra/Rd=Rb/Rc,半导体压力传感器30等效的惠斯通电桥电桥平衡,第一感应信号测量端Vout1和第二感应信号测量端Vout2输出的压感检测信号之差为零,当有压力施加到显示面板时,第一感应信号测量端Vout1和第二感应信号测量端Vout2输出的压感检测信号之差由零变为非零,提高了压力检测灵敏度,并且降低压力计算难度。
另外,可选的,可以如图4和图5所示设置半导体压力传感器的对称轴垂直于第二边和第一边,且第三边和第四边相对于对称轴对称,也可以设置半导体压力传感器的对称轴垂直于第三边和第四边,且第一边和第二边相对于对称轴对称,以保证未施加压力时,半导体压力传感器等效的惠斯通电桥电桥平衡,第一感应信号测量端和第二感应信号测量端输出的压感检测信号之差为零。
图6是本发明实施例提供的又一种半导体压力传感器的示意图,图7是本发明实施例提供的又一种半导体压力传感器的示意图。可选的,参考图4-7,镂空区域310的形状为多边形、圆形或椭圆形。
具体的,镂空区域310的形状可以根据半导体压力传感器30外部轮廓的形状以及四个等效电阻的初始阻值进行设定,并不做具体限定。
可选的,参考图4和图5,半导体压力传感器30的外部轮廓的形状可以为正方形,镂空区域310的形状可以为正方形,镂空区域310的一条对角线311与半导体压力传感器30外部轮廓的一条边相互垂直。
具体的,镂空区域310的形状影响半导体压力传感器30四个等效电阻阻值分布,从而会影响半导体压力传感器30等效的惠斯通电桥的初始输出值(即未施加压力时第一感应信号测量端Vout1和第二感应信号测量端Vout2输出的压感检测信号之差),另外为了能够起到检测触控压力的大小的作用,通常的惠斯通电桥要求Ra与Rb,Rc与Rd所感受的形变不同,比如Ra和Rc感受压缩形变,Rb和Rd感受拉伸形变,镂空区域310的形状还会影响四个等效电阻的形状分布,从而可能影响四个等效电阻所感受的形变,从而影响施加压力时,四个等效电阻的变化量,影响半导体压力传感器30的压力检测精度。
具体的,通过设置镂空区域310和半导体压力传感器30的外部轮廓均为正方形,并且镂空区域310的一条对角线311与半导体压力传感器30外部轮廓的一条边垂直,半导体压力传感器30相对于几何中心D1和D2中心对称,四个等效电阻对应的区域形状相同,使得半导体压力传感器30的四个等效电阻的阻值相等,使得惠斯通电桥的初始输出值为零,提高了压力检测灵敏度,并且降低压力计算难度。另外,四个等效电阻中Ra与Rc的形状分布相同,Rb与Rd的形状分布相同,且Ra与Rc的形状均相对于Rb与Rd的形状旋转90度,则Ra与Rc可测量同一方向的应变,Rb与Rd可测量同一方向的应变,Ra与Rc和Rb与Rd的测量的应变方向不同,保证半导体压力传感器30的能够准确的测量施加到显示面板的压力大小。
图8是本发明实施例提供的又一种显示面板的示意图,可选的,参考图8,显示面板还包括多条数据线50,半导体压力传感器30外部轮廓的一条对角线301与数据线50相互垂直。
具体的,压力传感器30的对角线与数据线40之间的夹角会影响压力传感器30识别触控压力大小的灵敏度。发明人通过实验与仿真得出以下结论:按压显示面板时,显示面板按压位置附近在不同方向具有不同的应变,并且引起的沿x方向和沿y方向的应变差较大,其中x方向和y方向分别为显示面板的长边方向和短边方向。通过设置半导体压力传感器30的一条对角线301与数据线50相互垂直,使得半导体压力传感器30的等效电阻Ra与Rc和等效电阻Rb与Rd可以分别测量沿x方向和沿y方向的应变,使得相同压力下,等效电阻Ra与Rc的阻值变化量和Rb与Rd的阻值变化量相差较大,从而使得惠斯通电桥的第一感应信号测量端和第二感应信号测量端输出的压感检测信号之差较大,从而提高了半导体压力传感器30识别触控压力大小的灵敏度,保证压力检测精度。
另外,四边形的半导体压力传感器30具有两条对角线,可以设置任意一条对角线与数据线50相互垂直,并不做具体限定。
图9是本发明实施例提供的又一种半导体压力传感器的示意图,参考图9,半导体压力传感器30的外部轮廓可以为八边形,镂空区域310的形状为正方形,镂空区域310的一条对角线与半导体压力传感器30的外部轮廓的一条边相互垂直,半导体压力传感器30的第一边31与第二边32相对设置,第三边33和第四边34相对设置,第一边31与第三边33和第四边34分别间隔一条边。参考图9,四个等效电阻对应的区域更加接近细长状,一方面提高了半导体压力传感器30四个等效电阻的阻值,增大压力传感器30的分压,保证压力传感器30具有较大的偏置电压,提高压力检测精度,另一方面,细长状的四个等效电阻对沿其长度方向的应变测量灵敏度更高,具体的可以设置镂空区域310的一条边与显示面板的数据线相互垂直,以提高半导体压力传感器30对压力的测量灵敏度更高。
可选的,图10是图8中显示面板沿剖面线A1-A2的剖面图,参考图8和图10,显示面板包括阵列基板100,阵列基板100的显示区设置有多个像素单元110,像素单元110包括薄膜晶体管111;半导体压力传感器30与薄膜晶体管111的有源层101同层设置。
可选的,半导体压力传感器30采用多晶硅材料膜制成。
这样设置,使得薄膜晶体管111的有源层101和半导体压力传感器30可以在同一制作工艺中完成,能够有效减少一道硅材料膜制程,简化了阵列基板的制作工艺,降低了制作成本。
需要说明的是,阵列基板的显示区所对应的区域与显示面板的显示区所对应的区域相同。图8和图10中仅示例性的示出了显示面板的阵列基板的像素单元和薄膜晶体管,并未示出显示面板的其他膜层结构,并非对本发明的限定。
图11a是本发明实施例提供的又一种显示面板的示意图,图11b是图11a中显示面板沿剖面线B1-B2的剖面图,可选的,参考图11a和图11b,显示面板还包括:
彩膜基板200,彩膜基板200与阵列基板100相对设置,框胶300,框胶300位于显示面板的非显示区20,并位于彩膜基板200和阵列基板100之间;框胶300在阵列基板100的垂直投影与半导体压力传感器30的镂空区域310部分交叠。
具体的,框胶300固化时,UV光从阵列基板100的方向照射框胶300,本实施例通过在半导体压力传感器30设置镂空区域310,并且框胶300在阵列基板100的垂直投影与半导体压力传感器30的镂空区域310部分交叠,减少半导体压力传感器30对光线的遮挡,有利于框胶300固化,避免因框胶300固化不全引起漏液晶及污染液晶导致显示不良。
图12a是本发明实施例提供的又一种显示面板的示意图,图12b是图12a中显示面板沿剖面线C1-C2的剖面图。可选的,参考图12a和图12b,显示面板还包括:彩膜基板200,彩膜基板200与阵列基板100相对设置,框胶300,框胶300位于显示面板的非显示区20,并位于彩膜基板200和阵列基板100之间;框胶300在阵列基板100的垂直投影与半导体压力传感器30不交叠。
具体的,由于框胶300起到固定作用,按压显示面板是时框胶300的形变较小,可能影响半导体压力传感器30对压力的检测,通过设置框胶300在阵列基板100的垂直投影与半导体压力传感器30不交叠,一方面提高了半导体压力传感器30的压力检测精度,另一方面,进一步减少了半导体压力传感器30对光线的遮挡,有利于框胶300固化,避免因框胶300固化不全引起漏液晶及污染液晶导致显示不良。
继续参考图12a和图12b,显示面板还包括遮光层60,遮光层60设置于阵列基板100,并位于半导体压力传感器300远离彩膜基板200的一侧;
遮光层60在半导体压力传感器30所在平面的垂直投影覆盖半导体压力传感器30;
遮光层60包括开口区610,开口区610在半导体压力传感器30所在平面的垂直投影位于镂空区域310内。
具体的,由于半导体压力传感器30比较靠近显示区10的边缘,通过设置遮光层60,可避免由于显示面板的背光源发出的光线衍射或散射到半导体压力传感器30而使半导体压力传感器30产生光生载流子,而影响影响半导体压力传感器30的阻值及压力检测性能。示例性的,遮光层60的形状可以与半导体压力传感器30的形状类似,其外部轮廓比半导体压力传感器30的外部轮廓略大,开口区610比镂空区域310略小。另外,遮光层的材料可以为Mo,若阵列基板100的薄膜晶体管设置有遮光层,则遮光层60可以与薄膜晶体管的遮光层同层制作,以减少工艺步骤,降低工艺成本。
图13是本发明实施例提供的又一种显示面板的示意图,可选的,参考图13,非显示区20包括相对的第一区域21和第二区域22,第一区域21和第二区域22沿显示面板的长边方向延伸,半导体压力传感器30设置于第一区域21和/或第二区域22。
具体的,第一区域21和第二区域22位于非显示区20的长边,分别位于显示区10的两侧。由于对显示面板的分辨率要求越来越高,显示区10中可放置半导体压力传感器30的空间越来越小,并且若将半导体压力传感器30放置于显示面板的显示区10,可能影响显示面板的图像显示质量,将半导体压力传感器30设置于第一区域21和/或第二区域22符合显示面板的高分辨率要求。
可选的,参考图13,显示面板还包括多个移位寄存器70,设置于第一区域21和第二区域22,用于为显示面板提供扫描信号;半导体压力传感器30设置于相邻的移位寄存器70之间。这样设置,可以充分利用移位寄存器70之间的空闲区域,半导体压力传感器30无需占用非显示区20过多的区域,有利于实现显示面板的窄边框。
本实施例还提供了一种显示装置。图14是本发明实施例提供的一种显示装置的示意图,参考图14,显示装置400包括本发明任意实施例所述的显示面板500。
注意,上述仅为本发明的较佳实施例及所运用技术原理。本领域技术人员会理解,本发明不限于这里所述的特定实施例,对本领域技术人员来说能够进行各种明显的变化、重新调整、相互结合和替代而不会脱离本发明的保护范围。因此,虽然通过以上实施例对本发明进行了较为详细的说明,但是本发明不仅仅限于以上实施例,在不脱离本发明构思的情况下,还可以包括更多其他等效实施例,而本发明的范围由所附的权利要求范围决定。
Claims (16)
1.一种显示面板,其特征在于,包括:显示区和围绕所述显示区的非显示区;
所述显示面板包括至少一个半导体压力传感器,设置于所述非显示区;所述半导体压力传感器为面状,所述半导体压力传感器设置有镂空区域;沿所述半导体压力传感器的厚度方向,所述镂空区域贯穿所述半导体压力传感器。
2.根据权利要求1所述的显示面板,其特征在于:
所述镂空区域的几何中心与所述半导体压力传感器的外部轮廓图形的几何中心重合。
3.根据权利要求1所述的显示面板,其特征在于:
所述半导体压力传感器的外部轮廓为至少包括四个边的多边形,包括第一边、第二边、第三边和第四边;所述第一边和所述第二边之间间隔所述多边形的至少一个边,所述第三边和第四边之间间隔所述多边形的至少一个边;
所述半导体压力传感器包括位于所述第一边的第一电源信号输入端和位于所述第二边的第二电源信号输入端,用于向所述半导体压力传感器输入偏置电压信号;
所述半导体压力传感器还包括位于所述第三边的第一感应信号测量端和位于所述第四边的第二感应信号测量端,用于从所述半导体压力传感器输出压感检测信号。
4.根据权利要求3所述的显示面板,其特征在于:
所述半导体压力传感器为轴对称图形。
5.根据权利要求4所述的显示面板,其特征在于:
所述镂空区域的形状为多边形、圆形或椭圆形。
6.根据权利要求5所述的显示面板,其特征在于:
所述半导体压力传感器的外部轮廓的形状为正方形,所述镂空区域的形状为正方形,所述镂空区域的一条对角线与所述半导体压力传感器外部轮廓的一条边相互垂直。
7.根据权利要求6所述的显示面板,其特征在于:
所述显示面板还包括多条数据线,所述半导体压力传感器外部轮廓的一条对角线与所述数据线相互垂直。
8.根据权利要求1所述的显示面板,其特征在于:
所述显示面板包括阵列基板,所述阵列基板的显示区设置有多个像素单元,所述像素单元包括薄膜晶体管;
所述半导体压力传感器与所述薄膜晶体管的有源层同层设置。
9.根据权利要求8所述的显示面板,其特征在于,还包括:
彩膜基板,所述彩膜基板与所述阵列基板相对设置,
框胶,所述框胶位于所述显示面板的非显示区,并位于所述彩膜基板和所述阵列基板之间;
所述框胶在所述阵列基板的垂直投影与所述半导体压力传感器的所述镂空区域部分交叠。
10.根据权利要求8所述的显示面板,其特征在于,还包括:
彩膜基板,所述彩膜基板与所述阵列基板相对设置,
框胶,所述框胶位于所述显示面板的非显示区,并位于所述彩膜基板和所述阵列基板之间;
所述框胶在所述阵列基板的垂直投影与所述半导体压力传感器不交叠。
11.根据权利要求9或10所述的显示面板,其特征在于,还包括:
遮光层,所述遮光层设置于所述阵列基板,并位于所述半导体压力传感器远离所述彩膜基板的一侧;
所述遮光层在所述半导体压力传感器所在平面的垂直投影覆盖所述半导体压力传感器;
所述遮光层包括开口区,所述开口区在所述半导体压力传感器所在平面的垂直投影位于所述镂空区域内。
12.根据权利要求8所述的显示面板,其特征在于:
所述半导体压力传感器采用多晶硅材料膜制成。
13.根据权利要求1所述的显示面板,其特征在于:
所述非显示区包括相对的第一区域和第二区域,所述第一区域和所述第二区域沿所述显示面板的长边方向延伸,所述半导体压力传感器设置于所述第一区域和/或所述第二区域。
14.根据权利要求13所述的显示面板,其特征在于,还包括:
多个移位寄存器,设置于所述第一区域和所述第二区域,用于为所述显示面板提供扫描信号;
所述半导体压力传感器设置于相邻的所述移位寄存器之间。
15.根据权利要求1所述的显示面板,其特征在于,还包括:
驱动电路,用于为所述半导体压力传感器提供偏置电压;
位于所述显示区同一侧的各所述半导体压力传感器的第一电源信号输入端均与所述驱动电路的第一信号输出端电连接,位于所述显示区同一侧的各所述半导体压力传感器的第二电源信号输入端均与所述驱动电路的第二信号输出端电连接。
16.一种显示装置,其特征在于,包括权利要求1-15任一项所述的显示面板。
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