CN107267944A - 具有温度自补偿的高温薄膜半桥式电阻应变计及制备方法 - Google Patents

具有温度自补偿的高温薄膜半桥式电阻应变计及制备方法 Download PDF

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CN107267944A
CN107267944A CN201710542699.8A CN201710542699A CN107267944A CN 107267944 A CN107267944 A CN 107267944A CN 201710542699 A CN201710542699 A CN 201710542699A CN 107267944 A CN107267944 A CN 107267944A
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蒋书文
刘豪
赵晓辉
蒋洪川
张万里
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University of Electronic Science and Technology of China
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Abstract

本发明属于薄膜电阻应变计技术领域，提供一种具有温度自补偿的高温薄膜半桥式电阻应变计及制备方法，适用于原位温度不宜直接测得或者温度处于动态波动的高温环境。本发明半桥式电阻应变计，包括从下向上依次层叠的镍基合金基底、缓冲层、绝缘层、功能层及保护层，功能层由两个相同结构的图形化应变敏感单元构成，两个图形化应变敏感单元相互垂直设置、共同构成一个半桥式结构；将该薄膜半桥式电阻应变计接入惠斯通桥式电路中，能够有效的自补偿测试过程中由于温度波动(变化)引起的视应变误差以及敏感层电阻漂移所引起的漂移应变误差，从而提高应变计的测试精度和准确度；另外，其制备工艺简单、制备成本低、利于工业化生产。

Description

具有温度自补偿的高温薄膜半桥式电阻应变计及制备方法
技术领域
本发明属于薄膜电阻应变计技术领域，提供一种具有温度自补偿的高温薄膜半桥式电阻应变计及其制备方法，适用于原位温度不宜直接测得或者温度处于动态波动的高温环境。
技术背景
随着使用环境温度的普遍提高，某些关键部位的材料已经接近其使用极限温度，例如新一代航空发动机燃烧室温度已达到1500℃以上，工作在其中的涡轮叶片随着使用时间的增加会出现裂纹、脱落，造成灾难性后果。因此，需要对涡轮叶片表面原位的应力、应变等力学参数进行监测。
基于真空技术的发展，采用真空镀膜的方法将应变敏感材料直接沉积在被测试样的表面，制备成薄膜化的应变计，诸如美国NASA(National Aeronautics and SpaceAdministration)研制的TaN薄膜电阻式应变计以及罗德岛大学Otto J.Gregory团队研发的ITO薄膜电阻应变计等，这类薄膜化应变计厚度只有几十微米，不仅具有与微型化、结构与功能一体化的特点，而且具有较高的灵敏度、准确度，适用于航空发动机涡轮叶片表面应变的原位测量。但是，在高温环境中，各种类型的应变敏感材料的电子、空穴等载流子浓度及迁移率随温度变化都具有一定变化，以及不同材料具有不同的热膨胀系数，导致各种应变计都具有一定的电阻温度系数及热膨胀系数，进而使应变计对应变的测量带来视应变误差；而且，即使在高温温度恒定时，应变敏感材料存在一定的电阻漂移，产生漂移应变；这些误差都影响应变计对实际应变的测试准确度。
为了提高高温环境下应变测试的精度及准确度，需要对应变测量进行温度补偿。例如，采用接入铂(Pt)作为补偿材料或者采用具有正温度系数的材料(Pt)与具有负温度系数的材料(ITO)复合以减小温度对应变计所带来的误差；但这两种方法不仅需要探究多种材料性能，而且需要不同种材料之间进行协调配比，进行多次敏感层图形化沉积复合，即增加了操作步骤，又增加了技术难度。
发明内容
本发明的目的在于针对以上技术难点，提出了一种具有温度自补偿的高温薄膜半桥式电阻应变计及其制备方法；利用惠斯通桥式电路原理，采用两个相互垂直且具有相同结构的图形化应变敏感层共同构成惠斯通桥式电路中的一个半桥结构，从而形成半桥式应变计；将该薄膜半桥式电阻应变计接入惠斯通桥式电路中，能够有效的自补偿测试过程中由于温度波动(变化)引起的视应变误差以及敏感层电阻漂移所引起的漂移应变误差，从而提高应变计的测试精度和准确度。
为实现上述目的，本发明采用的技术方案为：
具有温度自补偿的高温薄膜半桥式电阻应变计，包括从下向上依次层叠的镍基合金基底、缓冲层、绝缘层、功能层及保护层，其特征在于，所述功能层由两个相同结构的图形化应变敏感单元构成，所述两个图形化应变敏感单元相互垂直设置、共同构成一个半桥式结构。
进一步的，所述缓冲层为NiCrAlY缓冲层，所述绝缘层为从下向上依次层叠的YSZ层、Al2O3层、YSZ层及Al2O3层构成的组合绝缘层，所述缓冲层与绝缘层之间还设置有热氧化α-Al2O3层，所述保护层为Al2O3保护层，所述两个图形化应变敏感单元均为PdCr应变敏感层。
更进一步的，上述具有温度自补偿的高温薄膜半桥式电阻应变计的制备方法，其特征在于，包括以下步骤：
步骤1：对镍基合金基底进行抛光及清洗；
步骤2：采用射频磁控溅射在镍基合金基底表面沉积一层NiCrAlY缓冲层；
步骤3：将已沉积有NiCrAlY缓冲层的镍基合金基底进行热氧化形成热氧化α-Al2O3层；
步骤4：采用直流反应溅射在热氧化α-Al2O3层表面依次制备YSZ层、Al2O3层、YSZ层、Al2O3层得到组合绝缘层；待基底冷却后，将制备得到了组合绝缘层放置于大气800℃环境中退火2小时；
步骤5：采用金属掩膜方法，在组合绝缘层表面直流反应溅射制备PdCr应变敏感层的敏感栅以及连接点、Pad并构成具有半桥结构的功能层，并在真空环境中退火2小时；
步骤6：采用直流反应溅射在在功能层表面制备Al2O3保护层，提高PdCr应变敏感层的高温抗氧化能力，即制备得具有温度自补偿的高温薄膜半桥式电阻应变计。
其中，步骤2中射频磁控溅射的溅射参数为：本底真空优于5×10-3Pa、温度为350～600℃、溅射气压为0.3～0.4Pa、溅射功率为300～500W，以NiCrAlY合金为靶材，以体积百分比纯度不低于99.999％的氩气作为反应介质，沉积厚度为12～18μm；步骤3中，在本底真空优于8×10-4Pa、1050℃的真空环境中恒温6小时，使NiCrAlY中Al析出富集到表面形成富Al层，随后在1050℃恒温环境中持续通入以体积百分比纯度不低于99.999％的氧气氧化富Al层。步骤4中，直流反应溅射参数为：本底真空优于8×10-4Pa、溅射温度为400～600℃、溅射气压为0.3～0.6Pa、溅射功率为80～150W，以YZr和AlZr合金为靶材，以体积百分比纯度不低于99.999％的氩气和氧气作为反应介质，YSZ和Al2O3薄膜沉积厚度分别为0.5～0.8μm和1.5～2.3μm。步骤5中，直流反应溅射参数为：本底真空优于8×10-4Pa、溅射温度为300～450℃、溅射气压为0.3～0.6Pa、溅射功率为50～100W，以PdCr合金为靶材，以体积百分比纯度不低于99.999％的氩气作为反应介质，沉积厚度为1～1.8μm。步骤6中，直流反应溅射参数为：本底真空优于8×10-4Pa、溅射温度为400～600℃、溅射气压为0.3～0.6Pa、溅射功率为80～150W，以金属Al为靶材，以体积百分比纯度不低于99.999％的氩气和氧气作为反应介质，Al2O3保护层厚度为2～2.5μm。
与现有技术相比，本发明的有益效果在于：
本发明中提供一种具有自温度补偿的高温薄膜半桥式电阻应变计及其制备方法，具有以下优点：
1、本发明半桥式电阻应变计采用相同的结构且相互垂直的两个图形化应变敏感单元构成功能层；测试时处于同一温度环境中，使温度对应变计电阻特性具有一致的影响；因此，将半桥式应变计接入惠斯通桥式测试电路中，能够有效的消除由于温度变化所带来的视应变误差；
2、本发明中，构成该半桥式结构的两个应变敏感单元和敏感材料完全相同，使得高温环境下的两个应变计具有相同的漂移电阻；因此，利用本发明半桥式结构应变计和惠斯通测试电路也能够有效消除由于高温下应变计电阻漂移所带来的漂移应变误差；
3、本发明半桥式电阻应变计采用两个相互垂直的结构，在单轴应变测试时能够最小化两个应变计之间横向应变误差。
附图说明
图1为实施例中具有温度自补偿PdCr薄膜半桥式电阻应变计的惠斯通桥式电路连接示意图。
图2为实施例中具有温度补偿的高温薄膜半桥式电阻应变计结构示意图；其中，(a)为剖面图，(b)为俯视图。
图3为实施例中具有温度补偿的高温薄膜半桥式电阻应变计的中应变敏感层结构示意图；其中(a)为半桥式结构的应变敏感栅，(b)为半桥式结构的应变敏感栅连接点以及Pad，(c)为半桥式结构示意图。
具体实施方式
下面结合附图和实施例对本发明做进一步的说明。
本实施例提供一种具有温度自补偿的高温薄膜半桥式电阻应变计及其制备方法，该应变计的惠斯通桥路连接方式示意图如图1所示，器件结构示意图如图2所示，包括从下往上依次层叠设置的镍基合金基底、NiCrAlY缓冲层、热氧化α-Al2O3层、YSZ/Al2O3/YSZ/Al2O3组合绝缘层、具有半桥式结构的PdCr应变敏感层(功能层)、Al2O3保护层；其制备方法包括以下步骤：
步骤1：采用机械或者人工将长×宽×高分别为100×30×3mm的镍基合金基底进行抛光，并用丙酮、酒精、去离子水超声清洗；
步骤2：将步骤1中所得基底放置于离子镀膜机中，采用射频磁控溅射镀膜方式，在本底真空优于5×10-3Pa、温度为450℃、溅射气压为0.31Pa、溅射功率为500W，以NiCrAlY合金为靶材，以体积百分比纯度不低于99.999％的氩气作为反应介质，沉积厚度为15μm的NiCrAlY缓冲层，以提高绝缘层与基底之间的附着力；
步骤3：将步骤2中所得NiCrAlY缓冲层放置有真空管式炉中，在真空度优于8×10- 4Pa、温度为1050℃环境中真空处理6小时，使NiCrAlY薄膜层中的Al析出到膜层表面形成富Al层；随后在1050℃恒温中通入以体积百分比纯度不低于99.999％的氧气作为反应介质，持续通入6小时，使表面的富Al层发生热氧化反应生成α-Al2O3；
步骤4：将步骤3中所得基底放置于可调真空镀膜机中，采用直流反应溅射镀膜方式，在本底真空优于1×10-3Pa、温度为550℃、溅射气压为0.5Pa、溅射功率为100W，以YZr合金为靶材，以体积百分比纯度不低于99.999％的氩气和氧气作为反应介质，沉积厚度为0.65μm的YSZ层；以同样的参数，以AlZr合金为靶材，沉积厚度为1.7μm的Al2O3层；并依次重复2遍，制备得到YSZ/Al2O3/YSZ/Al2O3组合绝缘层以达到敏感层与金属基底之间的绝缘性需求；冷却后，在大气800℃中退火2小时；
步骤5：采用金属掩膜和直流溅射沉积的方式，在本底真空优于8×10-4Pa、温度为400℃、溅射气压为0.4Pa、溅射功率为100W，以PdCr合金为靶材，以体积百分比纯度不低于99.999％的氩气和氧气作为反应介质，分两次分别将具有半桥式结构厚度为1μm的敏感栅(如图3(a))以及厚度为1.5μm的连接点和Pad(如图3(b))沉积在步骤4中所得组合绝缘层表面共同构成具有半桥式结构的PdCr敏感层(如图3(c))，并在真空800℃环境中退火2小时；
步骤6：采用步骤4中Al2O3所用溅射参数，将步骤5中制备的PdCr敏感层Pad以外区域溅射沉积一层厚度为2μm的Al2O3保护层；从而制备得到具有温度自补偿的高温薄膜半桥式电阻应变计；
步骤7：采用如图1的连接方式，将制备有自补偿的高温薄膜半桥式电阻应变计接入惠斯通桥式测试电路。
以上所述，仅为本发明的具体实施方式，本说明书中所公开的任一特征，除非特别叙述，均可被其他等效或具有类似目的的替代特征加以替换；所公开的所有特征、或所有方法或过程中的步骤，除了互相排斥的特征和/或步骤以外，均可以任何方式组合。

Claims (8)

1.具有温度自补偿的高温薄膜半桥式电阻应变计，包括从下向上依次层叠的镍基合金基底、缓冲层、绝缘层、功能层及保护层，其特征在于，所述功能层由两个相同结构的图形化应变敏感单元构成，所述两个图形化应变敏感单元相互垂直设置、共同构成一个半桥式结构。
2.按权利要求1所述具有温度自补偿的高温薄膜半桥式电阻应变计，其特征在于，所述缓冲层为NiCrAlY缓冲层，所述绝缘层为从下向上依次层叠的YSZ层、Al2O3层、YSZ层及Al2O3层构成的组合绝缘层，所述缓冲层与绝缘层之间还设置有热氧化α-Al2O3层，所述保护层为Al2O3保护层，所述两个图形化应变敏感单元均为PdCr应变敏感层。
3.按权利要求2所述具有温度自补偿的高温薄膜半桥式电阻应变计的制备方法，其特征在于，包括以下步骤：
步骤1：对镍基合金基底进行抛光及清洗；
步骤2：采用射频磁控溅射在镍基合金基底表面沉积一层NiCrAlY缓冲层；
步骤3：将已沉积有NiCrAlY缓冲层的镍基合金基底进行热氧化形成热氧化α-Al2O3层；
步骤4：采用直流反应溅射在热氧化α-Al2O3层表面依次制备YSZ层、Al2O3层、YSZ层、Al2O3层得到组合绝缘层；待基底冷却后，将制备得到了组合绝缘层放置于大气800℃环境中退火2小时；
步骤5：采用金属掩膜方法，在组合绝缘层表面直流反应溅射制备PdCr应变敏感层的敏感栅以及连接点、Pad并构成具有半桥式结构的功能层，并在真空环境中退火2小时；
步骤6：采用直流反应溅射在在功能层表面制备Al2O3保护层，提高PdCr应变敏感层的高温抗氧化能力，即制备得具有温度自补偿的高温薄膜半桥式电阻应变计。
4.按权利要求3所述具有温度自补偿的高温薄膜半桥式电阻应变计的制备方法，其特征在于，步骤2中，射频磁控溅射的溅射参数为：本底真空优于5×10-3Pa、温度为350～600℃、溅射气压为0.3～0.4Pa、溅射功率为300～500W，以NiCrAlY合金为靶材，以体积百分比纯度不低于99.999％的氩气作为反应介质，沉积厚度为12～18μm。
5.按权利要求3所述具有温度自补偿的高温薄膜半桥式电阻应变计的制备方法，其特征在于，步骤3中，在本底真空优于8×10-4Pa、1050℃的真空环境中恒温6小时，使NiCrAlY中Al析出富集到表面形成富Al层，随后在1050℃恒温环境中持续通入以体积百分比纯度不低于99.999％的氧气氧化富Al层，形成热氧化α-Al2O3层。
6.按权利要求3所述具有温度自补偿的高温薄膜半桥式电阻应变计的制备方法，其特征在于，步骤4中，直流反应溅射参数为：本底真空优于8×10-4Pa、溅射温度为400～600℃、溅射气压为0.3～0.6Pa、溅射功率为80～150W，以YZr和Al合金为靶材，以体积百分比纯度不低于99.999％的氩气和氧气作为反应介质，YSZ和Al2O3薄膜沉积厚度分别为0.5～0.8μm和1.5～2.3μm。
7.按权利要求3所述具有温度自补偿的高温薄膜半桥式电阻应变计的制备方法，其特征在于，步骤5中，直流反应溅射参数为：本底真空优于8×10-4Pa、溅射温度为300～450℃、溅射气压为0.3～0.6Pa、溅射功率为50～100W，以PdCr合金为靶材，以体积百分比纯度不低于99.999％的氩气作为反应介质，沉积厚度为1～1.8μm。
8.按权利要求3所述具有温度自补偿的高温薄膜半桥式电阻应变计的制备方法，其特征在于，步骤6中，直流反应溅射参数为：本底真空优于8×10-4Pa、溅射温度为400～600℃、溅射气压为0.3～0.6Pa、溅射功率为80～150W，以金属Al为靶材，以体积百分比纯度不低于99.999％的氩气和氧气作为反应介质，Al2O3保护层厚度为2～2.5μm。
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111656129A (zh) * 2018-02-02 2020-09-11 美蓓亚三美株式会社 应变片
CN112410744A (zh) * 2020-11-09 2021-02-26 浙江工业大学 用于煤制气环境中的溅射薄膜敏感元件
CN112458415A (zh) * 2020-11-09 2021-03-09 浙江工业大学 用于高压氢环境中的薄膜应变片
CN112525062A (zh) * 2021-01-08 2021-03-19 浙江工业大学 用于高压硫化氢环境中的薄膜式电阻应变计
CN113984253A (zh) * 2021-10-23 2022-01-28 浙江维思无线网络技术有限公司 一种电阻应变栅传感器制备方法
CN114322740A (zh) * 2021-12-03 2022-04-12 电子科技大学长三角研究院(湖州) 一种基于磁控溅射的复合薄膜应变计及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102269567A (zh) * 2010-06-03 2011-12-07 陈彦平 一种自补偿的混凝土集成应变计
CN106403804A (zh) * 2016-08-23 2017-02-15 上海交通大学 一种高温同步补偿薄膜应变计及其制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102269567A (zh) * 2010-06-03 2011-12-07 陈彦平 一种自补偿的混凝土集成应变计
CN106403804A (zh) * 2016-08-23 2017-02-15 上海交通大学 一种高温同步补偿薄膜应变计及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
杨晓东: "PdCr高温薄膜应变计的研制", 《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111656129A (zh) * 2018-02-02 2020-09-11 美蓓亚三美株式会社 应变片
US11326967B2 (en) 2018-02-02 2022-05-10 Minebea Mitsumi Inc. Strain gauge with improved temperature effect detection
CN111656129B (zh) * 2018-02-02 2023-08-22 美蓓亚三美株式会社 应变片
CN112410744A (zh) * 2020-11-09 2021-02-26 浙江工业大学 用于煤制气环境中的溅射薄膜敏感元件
CN112458415A (zh) * 2020-11-09 2021-03-09 浙江工业大学 用于高压氢环境中的薄膜应变片
CN112410744B (zh) * 2020-11-09 2022-10-04 浙江工业大学 用于煤制气环境中的溅射薄膜敏感元件
CN112458415B (zh) * 2020-11-09 2022-10-21 浙江工业大学 用于高压氢环境中的薄膜应变片
CN112525062A (zh) * 2021-01-08 2021-03-19 浙江工业大学 用于高压硫化氢环境中的薄膜式电阻应变计
CN112525062B (zh) * 2021-01-08 2023-11-14 浙江工业大学 用于高压硫化氢环境中的薄膜式电阻应变计
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