CN107267939A - 一种旋转铬靶材及其制备方法 - Google Patents

一种旋转铬靶材及其制备方法 Download PDF

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CN107267939A
CN107267939A CN201710350813.7A CN201710350813A CN107267939A CN 107267939 A CN107267939 A CN 107267939A CN 201710350813 A CN201710350813 A CN 201710350813A CN 107267939 A CN107267939 A CN 107267939A
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chromium
rotation
chromium target
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CN107267939B (zh
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罗永春
胥小勇
石煜
曾墩风
王志强
雷雨
江涛
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Wuhu yingri Technology Co.,Ltd.
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C23C4/08—Metallic material containing only metal elements

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

本发明提供一种旋转铬靶材及其制备方法，所述旋转铬靶材为铬材料喷涂二次，所述旋转铬靶材的密度为6.2‑6.9g/cm³，所述旋转铬靶材的氧含量为1000‑5000ppm，所述旋转铬靶材的氮含量为1000‑10000ppm。通过热喷涂方法对铬靶材进行制备，提高制备效率，并且减少制备成本，尽量缩小晶粒尺寸，并且便于对使用后的残靶材进行修补，并且通过对铬靶材的氧氮含量进行控制，提升铬靶材的制造质量。

Description

一种旋转铬靶材及其制备方法
技术领域
本发明涉及靶材制造领域，尤其涉及一种旋转铬靶材及其制备方法。
背景技术
铬靶材被广泛应用在电子、光电、军用、装饰、功能薄膜等，目前铬靶材的制备方法分为传统烧结、热压、真空热压、热等静压、传统等离子喷涂等多种方法，但是由于其制备工艺的限制，其靶材制备时存在以下问题：1、要使用高温设备，制备成本高2、晶粒尺寸较大3、靶材与基体管为一体管，使用后的残靶材不易修复4、氧含量高等。因此，解决铬靶材制造时出现的成本较大、晶粒尺寸较大及使用后的靶材不易修复的问题就显得尤为重要了。
发明内容
本发明的目的是提供一种旋转铬靶材及其制备方法，通过热喷涂方法对铬靶材进行制备，提高制备效率，并且减少制备成本，晶粒尺寸小，并且便于对使用后的残靶材进行修补。
本发明提供一种旋转铬靶材，所述旋转铬靶材的密度为6.2-6.9g/cm³，所述旋转铬靶材的氧含量为1000-5000ppm，所述旋转铬靶材的氮含量为1000-10000ppm。
进一步改进在于：所述旋转铬靶材的晶粒尺寸≤15μm。
本发明还提供一种旋转铬靶材的制备方法，所述制备方法步骤如下：
步骤一：将基体表面进行清理，并对其进行烘干；
步骤二：使用热喷涂设备将铬材质喷涂在基体表面；
步骤三：对靶材表面进行剖光处理，并对其端头进行机加工处理。
进一步改进在于：所述步骤二中对靶材进行喷涂时使用惰性气体进行保护。
进一步改进在于：所述步骤一中基体为合金管。
进一步改进在于：此旋转靶材经磁控溅射使用后的残靶材，经过表面清洁处理后可继续使用热喷涂的方法进行喷涂修复得到新靶材。
本发明的有益效果是：通过热喷涂方法对铬靶材进行制备，提高制备效率，并且减少制备成本，缩小晶粒尺寸，并且便于对使用后的残靶材进行修补，并且通过对铬靶材的氧氮含量进行控制，提升铬靶材的制造质量。
具体实施方式
为了加深对本发明的理解，下面将结合实施例对本发明作进一步详述，该实施例仅用于解释本发明，并不构成对本发明保护范围的限定。
实施例一
本实施例提供了一种旋转铬靶材，所述旋转铬靶材的密度为6.7g/cm³，所述旋转铬靶材的氧含量为1500ppm，所述旋转铬靶材的氮含量为7000ppm。所述旋转铬靶材得晶粒尺寸为3μm。
本实施例还提供一种旋转铬靶材的制备方法，所述制备方法步骤如下：
步骤一：将基体表面进行喷砂清理，并喷涂打底层；
步骤二：使用热喷涂设备将铬粉末或铬丝喷涂在基体表面；
步骤三：对靶材表面进行剖光处理，并对其进行两端进行机加工处理。
所述步骤二中对靶材进行喷涂时使用氮气对靶材进行保护。所述步骤一中基体为合金管。
实施例二
本实施例提供了一种旋转铬靶材，所述旋转铬靶材的密度为6.2g/cm³，所述旋转铬靶材的氧含量为1000ppm，所述旋转铬靶材的氮含量为1000ppm。所述旋转铬靶材得晶粒尺寸为3μm。
本实施例还提供一种旋转铬靶材的制备方法，所述制备方法步骤如下：
步骤一：将基体表面进行喷砂清理，并喷涂打底层；
步骤二：使用热喷涂设备将铬粉末或铬丝喷涂在基体表面；
步骤三：对靶材表面进行剖光处理，并对其进行两端进行机加工处理。
所述步骤二中对靶材进行喷涂时使用氩气对靶材进行保护。所述步骤一中基体为合金管。
实施例三
本实施例提供了一种旋转铬靶材，所述旋转铬靶材的密度为6.9g/cm³，所述旋转铬靶材的氧含量为5000ppm，所述旋转铬靶材的氮含量为10000ppm。所述旋转铬靶材得晶粒尺寸为3μm。
本实施例还提供一种旋转铬靶材的制备方法，所述制备方法步骤如下：
步骤一：将使用完的铬残靶表面进行清洁处理；
步骤二：使用热喷涂设备将铬粉末或铬丝喷涂在残靶材表面；
步骤三：对靶材表面进行剖光处理，并对其进行两端进行机加工处理。
所述步骤二中对靶材进行喷涂时使用氮气对靶材进行保护。所述步骤一中基体为经过表面清洁处理后的使用后的残靶材。

Claims (6)

1.一种旋转铬靶材，其特征在于：所述旋转铬靶材的密度为6.2-6.9g/cm3，所述旋转铬靶材的氧含量为1000-5000ppm，所述旋转铬靶材的氮含量为1000-10000ppm。
2.如权利要求1所述的一种旋转铬靶材，其特征在于：所述旋转铬靶材的晶粒尺寸≤15μm。
3.一种如权利要求1所述的旋转铬靶材的制备方法，其特征在于：所述制备方法步骤如下：
步骤一：将基体表面进行喷砂清理，并喷涂打底层；
步骤二：使用热喷涂设备将铬粉末或铬丝喷涂在基体表面；
步骤三：对靶材表面进行剖光处理，并对其进行两端进行机加工处理。
4.如权利要求3所述的一种旋转铬靶材的制备方法，其特征在于：所述步骤二中对靶材进行喷涂时使用惰性气体做气氛保护。
5.如权利要求3所述的一种旋转铬靶材的制备方法，其特征在于：所述步骤一中基体为合金管。
6.如权利要求3所述的一种旋转铬靶材的制备方法，其特征在于：此旋转靶材经磁控溅射使用后的残靶材，经过表面清洁处理后可继续使用热喷涂的方法进行喷涂修复得到新靶材。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108274009A (zh) * 2018-02-08 2018-07-13 合肥工业大学 一种Cr靶材的修复方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1074843A (zh) * 1993-02-17 1993-08-04 冶金工业部钢铁研究总院 磁控溅射铬靶的制造方法
CN102677005A (zh) * 2012-05-21 2012-09-19 烟台希尔德新材料有限公司 一种大型高致密铬靶的制造方法
CN102808092A (zh) * 2012-09-14 2012-12-05 苏州晶纯新材料有限公司 一种超低氧铬片的制备方法
CN203944839U (zh) * 2014-06-20 2014-11-19 江阴恩特莱特镀膜科技有限公司 高纯旋转铬靶的制作装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1074843A (zh) * 1993-02-17 1993-08-04 冶金工业部钢铁研究总院 磁控溅射铬靶的制造方法
CN102677005A (zh) * 2012-05-21 2012-09-19 烟台希尔德新材料有限公司 一种大型高致密铬靶的制造方法
CN102808092A (zh) * 2012-09-14 2012-12-05 苏州晶纯新材料有限公司 一种超低氧铬片的制备方法
CN203944839U (zh) * 2014-06-20 2014-11-19 江阴恩特莱特镀膜科技有限公司 高纯旋转铬靶的制作装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108274009A (zh) * 2018-02-08 2018-07-13 合肥工业大学 一种Cr靶材的修复方法

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