CN107265872A - 一种适用于晶硅电池正面银浆用双组份无铅玻璃粉 - Google Patents
一种适用于晶硅电池正面银浆用双组份无铅玻璃粉 Download PDFInfo
- Publication number
- CN107265872A CN107265872A CN201710555918.6A CN201710555918A CN107265872A CN 107265872 A CN107265872 A CN 107265872A CN 201710555918 A CN201710555918 A CN 201710555918A CN 107265872 A CN107265872 A CN 107265872A
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- Prior art keywords
- glass dust
- glass
- front side
- silver paste
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 title claims abstract description 117
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 36
- 239000004332 silver Substances 0.000 title claims abstract description 36
- 239000000843 powder Substances 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- 239000013078 crystal Substances 0.000 title claims abstract description 24
- 239000000428 dust Substances 0.000 claims abstract description 70
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 10
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims abstract description 9
- UBCKGWBNUIFUST-YHYXMXQVSA-N tetrachlorvinphos Chemical compound COP(=O)(OC)O\C(=C/Cl)C1=CC(Cl)=C(Cl)C=C1Cl UBCKGWBNUIFUST-YHYXMXQVSA-N 0.000 claims abstract description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 5
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims abstract description 5
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims abstract description 5
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910003069 TeO2 Inorganic materials 0.000 claims abstract description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims abstract description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 3
- 238000000498 ball milling Methods 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000005357 flat glass Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 239000004575 stone Substances 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- 239000010431 corundum Substances 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical group [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 102220076495 rs200649587 Human genes 0.000 claims description 4
- 102220043159 rs587780996 Human genes 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- 229910000018 strontium carbonate Inorganic materials 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 14
- 239000000853 adhesive Substances 0.000 abstract description 9
- 230000001070 adhesive effect Effects 0.000 abstract description 9
- 239000002002 slurry Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- NOTVAPJNGZMVSD-UHFFFAOYSA-N potassium monoxide Inorganic materials [K]O[K] NOTVAPJNGZMVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
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CN201710555918.6A CN107265872B (zh) | 2017-07-10 | 2017-07-10 | 一种适用于晶硅电池正面银浆用双组份无铅玻璃粉 |
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CN201710555918.6A CN107265872B (zh) | 2017-07-10 | 2017-07-10 | 一种适用于晶硅电池正面银浆用双组份无铅玻璃粉 |
Publications (2)
Publication Number | Publication Date |
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CN107265872A true CN107265872A (zh) | 2017-10-20 |
CN107265872B CN107265872B (zh) | 2020-08-04 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111268915A (zh) * | 2018-12-04 | 2020-06-12 | 上海银浆科技有限公司 | 一种太阳能正面银浆用双组分高接触玻璃粉 |
CN111276278A (zh) * | 2018-12-04 | 2020-06-12 | 上海银浆科技有限公司 | 一种石墨烯高效太阳能电池正面银浆及其制备方法 |
CN111533458A (zh) * | 2020-05-11 | 2020-08-14 | 湖北格纳斯新材料有限公司 | 一种环保型光伏太阳能电子浆料用玻璃粉的制备方法 |
CN111557036A (zh) * | 2017-11-06 | 2020-08-18 | LS-Nikko铜制炼株式会社 | 太阳能电池电极用导电性浆料以及使用上述浆料制造的太阳能电池 |
CN111875254A (zh) * | 2020-07-27 | 2020-11-03 | 上海银浆科技有限公司 | 一种适用于黑硅+perc电池的正面银浆用无铅玻璃粉及其制备方法 |
CN114974648A (zh) * | 2021-02-22 | 2022-08-30 | 深圳市首骋新材料科技有限公司 | 硅太阳能电池正面导电银浆及其制备方法、硅太阳能电池正面电极 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102603196A (zh) * | 2012-02-13 | 2012-07-25 | 江苏瑞德新能源科技有限公司 | 一种玻璃混合粉及其制备方法和含该玻璃混合粉的导电银浆 |
CN102898024A (zh) * | 2012-09-27 | 2013-01-30 | 广东风华高新科技股份有限公司 | 含碲玻璃材料及其制备方法和应用 |
CN105906199A (zh) * | 2015-02-19 | 2016-08-31 | 中央硝子株式会社 | Bi2O3-TeO2-SiO2-WO3系玻璃 |
CN106396416A (zh) * | 2016-08-29 | 2017-02-15 | 海宁市瑞银科技有限公司 | 一种硅基太阳电池背场钝化银浆用无铅玻璃粉及其制备方法 |
-
2017
- 2017-07-10 CN CN201710555918.6A patent/CN107265872B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102603196A (zh) * | 2012-02-13 | 2012-07-25 | 江苏瑞德新能源科技有限公司 | 一种玻璃混合粉及其制备方法和含该玻璃混合粉的导电银浆 |
CN102898024A (zh) * | 2012-09-27 | 2013-01-30 | 广东风华高新科技股份有限公司 | 含碲玻璃材料及其制备方法和应用 |
CN105906199A (zh) * | 2015-02-19 | 2016-08-31 | 中央硝子株式会社 | Bi2O3-TeO2-SiO2-WO3系玻璃 |
CN106396416A (zh) * | 2016-08-29 | 2017-02-15 | 海宁市瑞银科技有限公司 | 一种硅基太阳电池背场钝化银浆用无铅玻璃粉及其制备方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111557036A (zh) * | 2017-11-06 | 2020-08-18 | LS-Nikko铜制炼株式会社 | 太阳能电池电极用导电性浆料以及使用上述浆料制造的太阳能电池 |
CN111557036B (zh) * | 2017-11-06 | 2022-03-25 | LS-Nikko铜制炼株式会社 | 太阳能电池电极用导电性浆料以及使用上述浆料制造的太阳能电池 |
CN111268915A (zh) * | 2018-12-04 | 2020-06-12 | 上海银浆科技有限公司 | 一种太阳能正面银浆用双组分高接触玻璃粉 |
CN111276278A (zh) * | 2018-12-04 | 2020-06-12 | 上海银浆科技有限公司 | 一种石墨烯高效太阳能电池正面银浆及其制备方法 |
CN111533458A (zh) * | 2020-05-11 | 2020-08-14 | 湖北格纳斯新材料有限公司 | 一种环保型光伏太阳能电子浆料用玻璃粉的制备方法 |
CN111875254A (zh) * | 2020-07-27 | 2020-11-03 | 上海银浆科技有限公司 | 一种适用于黑硅+perc电池的正面银浆用无铅玻璃粉及其制备方法 |
CN114974648A (zh) * | 2021-02-22 | 2022-08-30 | 深圳市首骋新材料科技有限公司 | 硅太阳能电池正面导电银浆及其制备方法、硅太阳能电池正面电极 |
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Address after: 201613 No. 101, room 68, No. 68, Chuang Chuang Road, Shanghai Applicant after: SHANGHAI YINJIANG TECHNOLOGY CO.,LTD. Address before: 200333 2502, 1 Lane 1628 lane, Jinsha River Road, Putuo District, Shanghai. Applicant before: SHANGHAI YINJIANG TECHNOLOGY CO.,LTD. |
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Denomination of invention: A two-component lead-free glass powder suitable for the front silver paste of crystalline silicon battery Effective date of registration: 20220831 Granted publication date: 20200804 Pledgee: Industrial Bank Co.,Ltd. Shanghai Minhang sub branch Pledgor: SHANGHAI YINJIANG TECHNOLOGY CO.,LTD. Registration number: Y2022310000224 |
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Date of cancellation: 20230912 Granted publication date: 20200804 Pledgee: Industrial Bank Co.,Ltd. Shanghai Minhang sub branch Pledgor: SHANGHAI YINJIANG TECHNOLOGY CO.,LTD. Registration number: Y2022310000224 |
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Denomination of invention: A two component lead-free glass powder suitable for silver paste on the front of crystalline silicon batteries Effective date of registration: 20230914 Granted publication date: 20200804 Pledgee: Industrial Bank Co.,Ltd. Shanghai Minhang sub branch Pledgor: SHANGHAI YINJIANG TECHNOLOGY CO.,LTD. Registration number: Y2023310000548 |