CN107265398A - The silicon that is etched based on mechanical scratching and metal catalytic is micro-/micro-nano structure preparation method - Google Patents
The silicon that is etched based on mechanical scratching and metal catalytic is micro-/micro-nano structure preparation method Download PDFInfo
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- CN107265398A CN107265398A CN201710450186.4A CN201710450186A CN107265398A CN 107265398 A CN107265398 A CN 107265398A CN 201710450186 A CN201710450186 A CN 201710450186A CN 107265398 A CN107265398 A CN 107265398A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00619—Forming high aspect ratio structures having deep steep walls
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
The invention discloses a kind of silicon etched based on mechanical scratching and metal catalytic it is micro-/micro-nano structure preparation method, this method comprises the following steps：S1, silicon chip pretreatment：By silicon wafer surface cleaning, totally drying obtains sample A afterwards；S2, integrated noble metal nano film：After depositing one layer of adhesion layer on sample A surfaces, then in the integrated noble metal nano film in its surface, sample B is obtained；S3, mechanical scratching noble metal nano film：Delineated using mechanical scratching on sample B surface, to remove the noble metal nano film of delineation part, obtaining arbitrarily is needing position, the sample C with setting character pattern；S4, prepare silicon it is micro-/micro-nano structure：In the mixed solution that sample C is put into hydrofluoric acid and hydrogen peroxide, it is performed etching, you can obtain with high-aspect-ratio silicon it is micro-/micro-nano structure.In general, the preparation method has the advantages that cost is low, simple to operate and can position processing, is expected to large-scale production.
Description
Technical field
The invention belongs to micro-nano structure manufacturing technology field, and in particular to one kind is etched based on mechanical scratching with metal catalytic
Silicon it is micro-/micro-nano structure preparation method.
Background technology
With the fast development of minute mechanical and electrical system, micro sensor devices and for example miniature lithium-ion electric of micro power source device
Widely paid close attention in pond etc..Because the specific capacity of silicon is up to 4200mAh/g, silicon is micro-/micro-nano structure be nowadays widely used in it is micro-
In the devices such as type lithium ion battery.Silicon is micro-/and micro-nano structure includes silicon micro-/ nano cable architecture, silicon micro-/ nano rod structure, silicon micro-/ nano
Tubular construction and silicon nanometer bead etc..Usual silicon is micro-/preparation method of micro-nano structure be divided into " from top to bottom " lithographic method and
" from bottom to top " deposition process." from bottom to top " it is typically random distribution that method, which processes obtained structure, and this is to big
Scale Integrated manufacture brings difficulty." from top to bottom " in processing method, the structure that uv-exposure (or electron beam exposure) is obtained
As mask, in conjunction with sense coupling technique can obtain the silicon with high-aspect-ratio it is micro-/micro-nano structure, it is but purple
Outer exposure, electron beam exposure and sense coupling are required for special equipment, and involve great expense.In " from top to bottom "
Processing method in operate the simplest and the minimum method of cost is exactly metal auxiliary catalysis lithographic method.Metal auxiliary catalysis
Lithographic method is that in surface of silicon, then sample noble metal (such as gold, silver, platinum and copper) nanoparticle deposition is inserted into hydrogen fluorine
Acid in the mixed solution of hydrogen peroxide with performing etching reaction.During the course of the reaction, noble metal nano particles play catalytic action, table
The accelerated etching of silicon of the face covered with noble metal region, the silicon of surface non precious metal overlay area is retained, so as to form
Silicon is micro-/micro-nano structure.In metal auxiliary catalysis etching reaction, the uniformity of deposition nano particle and the shape of nano thin-film are very
Can be influenceed in big degree silicon it is micro-/generation of micro-nano structure.For example based on depositing silver nano-grain with self-assembling method or use template
The silicon micro-nano structure pattern that deposition silver nano-grain etc. is obtained is different.Needed with the high accuracy development of micro-/nano electromechanical systems
Ask, also need to research and propose silicon of high aspect ratio it is micro-/the inexpensive controllable and positioning and processing method of micro-nano structure.If can arbitrarily need
Position processes the noble metal structures for obtaining controlled shape, in conjunction with metal catalytic etching reaction, just can obtain the height of controlled shape
Depth-to-width ratio silicon is micro-/micro-nano structure.
Therefore, the present invention propose a kind of new processing silicon of high aspect ratio it is micro-/receive the method for hierarchy, carved with reference to machinery
Draw noble metal film and metal catalytic etching technics obtain the silicon with high-aspect-ratio it is micro-/micro-nano structure.By in surface of silicon
Deposit one layer of uniform noble metal nano film, then obtained by the way of mechanical scratching on nano thin-film surface with it is specific (or
Arbitrarily) the nano thin-film of shape, finally with reference to metal auxiliary catalysis etching can obtain silicon it is micro-/receive hierarchy.The present invention is logical
The method that mechanical scratching is combined with metal auxiliary catalysis etching phase is crossed, is successfully prepared in ad-hoc location, with controllable shape
Silicon of high aspect ratio is micro-/receive hierarchy, develop a kind of inexpensive, simple to operate, silicon that is produced on a large scale it is micro-/receive classification knot
The novel processing step of structure.
The content of the invention
It is an object of the invention to provide it is a kind of low cost, can arbitrarily need position, processing controllable shape based on machinery
Delineation and the silicon of metal catalytic etching technics is micro-/micro-nano structure preparation method, the preparation method to substrate surface noble metal by receiving
Rice film controllable and positioning processing, thus arbitrarily need position, controllably process the silicon with high-aspect-ratio it is micro-/receive knot
Structure.This method can greatly reduce manufacturing cost, simple to operate and be easy to large-scale processing production.
In order to solve the above technical problems, the technical scheme is that：One kind is etched based on mechanical scratching with metal catalytic
Silicon it is micro-/micro-nano structure preparation method, this method comprises the following steps：
S1, silicon chip pretreatment：By silicon wafer surface cleaning, totally drying obtains sample A afterwards；
S2, integrated noble metal nano film：Deposited on sample A surface after one layer of adhesion layer, then it is integrated on its surface
Noble metal nano film, obtains sample B；
S3：Mechanical scratching noble metal nano film：Delineation processing is carried out on sample B surface using mechanical scratching, with
The noble metal nano film of delineation part is removed, there is the sample C of setting character pattern arbitrarily needing position to obtain surface；
S4, prepare silicon it is micro-/micro-nano structure：In the mixed solution that sample C is put into hydrofluoric acid and hydrogen peroxide, it is carved
Erosion, you can obtain the silicon micro-nano structure with high-aspect-ratio.
In above-mentioned technical proposal, in the step S1, Wafer Cleaning specific method is：Silicon chip is put into acetone soln first
Middle ultrasonic cleaning further is cleaned by ultrasonic silicon chip to remove to remove surface organic matter, then after being cleaned with deionized water with alcohol
Impurities on surface of silicon chip, finally again with deionized water cleaning sample repeatedly.The purpose of cleaning reaches removing silicon chip surface
Organic matter and impurity.Thus abovementioned steps are not limited to for specific cleaning method, it would however also be possible to employ commonly used in the art is clear
Wash technological means.And the specific time being cleaned by ultrasonic in above-mentioned steps does not have special limitation yet, the purpose cleaned up is reached i.e.
Can, 5min is preferably cleaned by ultrasonic in acetone soln, 5~10min is cleaned by ultrasonic in alcohol.
In above-mentioned technical proposal, in the step S2, the coating process of integrated noble metal nano film can be selected but not
It is limited to one kind in thermal evaporation plated film, magnetron sputtering, electron beam evaporation or electroplating technology, the specific process parameter that plated film is related to
This area conventional parameter and mode of operation can be directly used, the present invention has no special limitation to this.Integrated noble metal nano is thin
Before film, in one layer of adhesion layer of sample A surface depositions, it, which is acted on, is strengthened in noble metal auxiliary catalysis etching process, noble metal
Adhesiveness between nano thin-film and silicon substrate.Adhesion layer is the preferable metal film of adhesiveness, thickness be normally controlled in 1nm~
Between 5nm, adhesion layer can be selected but be not limited to titanium nanometer film, one in chromium nanometer film, nickel nanometer film or titanizing tungsten nanometer film
Kind.
Noble metal nano film can be selected but be not limited to silver nanoparticle film, platinum nano thin-film, copper nano thin-film or Jenner
The laminated film of rice film etc. or two or more above-mentioned metals.It should be noted that generally giving tacit consent in the art
Noble metal (noble metal) includes metallic copper.Further, except noble metals such as silver, platinum, gold, other noble metals are also same
Sample is applicable, and simply silver, platinum, gold, copper use more in the art relatively.In addition, the present invention innovative point and do not lie in expensive
In itself, every metal with same catalysis can be used metal.The thickness of noble metal nano film is normally controlled in
Between 10nm~80nm.When the thickness of noble metal nano film is excessively thin, because the gap of nano particle in film causes compared with conference
Silicon area covered with noble metal nano film directly produces micro-structural (such as nano wire or nano-pillar) in etching process, from
And influence the controllability of lithography shape.When the thickness of noble metal nano film is blocked up, blocked up noble metal nano film resistance
Contact of the silicon area that it is covered with etching liquid is hindered, the etching reaction that silicon substrate can be caused to occur is very weak to give birth to so as to cause to etch
Into silicon it is micro-/depth-to-width ratio of micro-nano structure is smaller.Therefore, control surface of silicon plates the noble metal nano film of suitable thickness range
The silicon that could produce preferable controlled shape is micro-/micro-nano structure.During noble metal auxiliary etch reacts, adhesion layer can be by hydrogen
Fluoric acid is etched rapidly, and noble metal nano film is directly contacted with silicon substrate afterwards, and silicon substrate is carried out initially as catalyst
Etching.
In above-mentioned technical proposal, in the step S3, mechanical scratching is more than the workpiece of noble metal nano film using hardness
Sample B surface is delineated, concrete mode can be selected but be not limited to Multi-contact micro-nano technology equipment and carry out or artificial
Delineation mode is carried out.Inventor utilizes Multi-contact micro-nano technology equipment, and (radius of curvature is 50 μ to original adoption Diamond tip
M) mechanical scratching is carried out to the noble metal nano film of surface of silicon.Found during many experiments：Because noble metal is received
The hardness of rice film is relatively low, it is possible to use the spherical steel ball of oil pen's nib substitutes Diamond tip, and machinery is carried out to its surface
Delineation.By above-mentioned rose method, position can be arbitrarily being needed to depict different structures, such as interdigital structure, linear array, dot matrix
Row etc., can also fabrication design increasingly complex fine structure.During mechanical scratching, plated film silicon chip surface is scored portion
The noble metal nano film separation divided, shows the silicon face with planform.And utilize the spherical steel ball of ballpoint tip
The cost that delineation not only reduces preparation is processed to its surface, also makes the method operation easier so that mechanical scratching work
Skill is not limited to Multi-contact micro-nano technology equipment, can also be by the way of delineation noble metal nano film manually.Specifically
Can according to practical application select mechanical scratching equipment and mode.It is optional when required structure dimension is larger sparse
Select the mode of delineation noble metal nano film manually；When the smaller comparatively dense of required structure dimension, Multi-contact may be selected
Micro-nano technology equipment etc. delineates noble metal nano film surface.What deserves to be explained is hardness is more than the spherical of noble metal nano film
Body is not limited to above-mentioned Diamond tip or spherical steel ball similar to ball-point pen tip or the processing being made up of other materials
Workpiece.The radius of curvature at ball pen tip (spherical steel ball) is preferably 0.3mm~0.5mm.Process delineation load is preferred
50mN~200mN.
In above-mentioned technical proposal, in the step S4, the noble metal nano film of silicon face covering rises in etching process
To the effect of catalyst, therefore silicon under noble metal nano film surface can be accelerated etching, and noble metal nano film is continuous
Sink.The silicon structure meeting of noble metal nano film institute exposing surface is scored because slowly being etched without the catalysis of noble metal,
Thus eventually formed the silicon with high-aspect-ratio it is micro-/micro-nano structure.After the completion of etching, using deionized water to sample rinse after,
It is put into concentrated nitric acid and etches 2~5min to remove the noble metal nano film of remained on surface, reuses deionized water rinse.
It is proposed by the present invention based on mechanical scratching and metal catalytic etching prepare silicon it is micro-/method of micro-nano structure, its innovative point
It is：Based on mechanical scratching noble metal film and metal catalytic etching technics processing with high-aspect-ratio silicon it is micro-/micro-nano structure.It is logical
Cross and deposit one layer of uniform noble metal nano film, then the position arbitrarily needed in noble metal nano film surface in surface of silicon
Put and the nano thin-film with specific (or any) shape is obtained by the way of mechanical scratching, finally combine metal auxiliary catalysis and carve
Etching technique be can obtain silicon it is micro-/micro-nano structure.Compared with traditional mechanical scratching processing method, this combination mechanical scratching and metal
The method of catalysis etching technics processing silicon micro-nano structure has that imposed load is small, needle point and resulting structures not easy to wear have profundity
Width is than big advantage.And compared with traditional metal catalytic etching technics, this new processing method can be processed at an arbitrary position
Go out the silicon of high aspect ratio micro-nano structure with any controllable shape.The width of gained silicon structure depends on the song of mechanical scratching needle point
The load applied in rate radius and scoring process.If load and needle point radius of curvature are larger, gained silicon structure is wider；If load and
Needle point radius of curvature is smaller, and the width of silicon structure is smaller.The outstanding feature of the present invention is directly carved using the method for mechanical scratching
Draw softer noble metal nano film, noble metal nano film it is any need position to process needed for shape structure, with
This is catalyzed the mask of etch step as subsequent metal, in metal catalytic etching reaction, delineates obtained its etching speed of region
Rate is much smaller than the etch rate of silverskin domain of the existence, thus can obtain the silicon micro-nano structure with high-aspect-ratio.
Beneficial effects of the present invention：The invention provides a kind of silicon of controlled shape it is micro-/preparation method of micro-nano structure, the party
Method is combined using mechanical scratching with metal auxiliary catalysis etching phase, can arbitrarily need position prepare controlled shape, have
The silicon of high-aspect-ratio is micro-/micro-nano structure.,, can when mechanical scratching is removed because noble metal nano film is softer in preparation process
Directly it is more than the workpiece of noble metal nano film (such as using hardness：Ball-point pen tip or Diamond tip) it just can effectively remove quarter
The noble metal nano film of part is drawn, shape is accurate, structural integrity nano thin-film to obtain.Meanwhile, according to such as ball pen
The processing workpiece of a sharp class is delineated, and can dramatically reduce the cost of silicon micro-nano structure preparation.In general, the system
Preparation Method has low cost, process control, simple to operate, structural integrity and accurate advantage, is adapted to large-scale production.The method
Obtained silicon micro-nano structure can be used in micro- energy device and micro sensing device etc., with very strong practical value.
Brief description of the drawings
Fig. 1 is the technological process for the silicon micro/nano structure preparation method that the present invention is etched based on mechanical scratching and metal catalytic
Figure.
Embodiment
The present invention is described further with specific embodiment below in conjunction with the accompanying drawings：
As shown in figure 1, the silicon etched based on mechanical scratching and metal catalytic of the present invention it is micro-/work of micro-nano structure preparation method
Skill flow chart, (a) refers to cleaning silicon chip, and (b) refers to the deposition of adhesion on silicon chip, and (c) refers to integrated metal film, and (d) is
Refer to mechanical scratching processing metallic film, (e) metal catalytic is etched, and (f) removes metallic film.Above-mentioned technological process is specially：
S1, silicon chip pretreatment：Sample A is obtained by drying is taken out after silicon wafer surface cleaning；
S2, integrated noble metal nano film：Deposited on sample A surface after one layer of adhesion layer, then it is integrated on its surface
Noble metal nano film, obtains sample B；
S3：Mechanical scratching noble metal nano film：Delineated using mechanical scratching on sample B surface, to remove
The noble metal nano film of part is delineated, the sample C that there is setting shape and structure pattern in ad-hoc location is obtained；
S4, prepare silicon it is micro-/micro-nano structure：In the mixed solution that sample C is put into hydrofluoric acid and hydrogen peroxide, it is carved
Erosion, that is, obtain silicon it is micro-/micro-nano structure.
Embodiment 1
S1, silicon chip pretreatment：Silicon chip is put into after being cleaned by ultrasonic 5min in acetone and cleaned with deionized water, then silicon chip is put
Enter ethanol solution and be cleaned by ultrasonic 10min, then rinsed well repeatedly using deionized water, and dried up with nitrogen, obtain sample A；
S2, integrated noble metal nano film：Using resistance-type thermal evaporation plated film instrument (Wuhan Na Mei Science and Technology Ltd.s),
On sample A surface in integrated titanium/silver nanoparticle film, coating process, the thickness of titanium nanometer film is 2nm.During silver-plated nano film,
The vacuum of plated film instrument is set to 10-4Pa, electric current is set to 110A, and the silver nanoparticle film that deposit thickness is about 50nm obtains sample
Product B；
S3：Mechanical scratching noble metal nano film：Using Multi-contact micro-nano technology equipment, use radius of curvature for
The sophisticated spherical balls of 0.3mm ball pen, depict interdigital structure with 150mN load on sample B surface, pass through machinery
Delineate to remove the silverskin of delineation part, so as to show the silicon face with interdigital structure, obtain sample C；
S4, prepare silicon it is micro-/micro-nano structure：In the mixed solution that sample C is put into hydrofluoric acid and hydrogen peroxide, solution is included
1.225ml hydrogen peroxide (30%), 22.33ml hydrofluoric acid (40%) and 76.445ml deionized waters.Titanium adhesion layer is carved rapidly
Etching off is removed, and silverskin is etched with silicon direct contact start catalysis afterwards, and sample deionized water rinse sample is taken out after reaction 10min
Product.It is then immersed in concentrated nitric acid solution and etches 2min to remove surface silverskin completely, then obtains after being cleaned repeatedly by deionized water
Silicon it is micro-/micro-nano structure.
Embodiment 2
The present embodiment compared with Example 1 compared with, except in step S2 use the integrated silver nanoparticle film of different plated film modes, its
Remaining step all same.Step S2 is specially in the present embodiment：
S2, integrated silver nanoparticle film：Using magnetron sputter (BEIYI JPGF 700A), deposited on sample A surfaces
Titanium/silver nanoparticle film.The thickness of adhesion layer titanium nanometer film is 2nm.In magnetron sputtering process, using rf-mode, air pressure is set
For 0.2Pa, power setting is 100W.After build-up of luminance, baffle plate is first covered into sample about 3min, waits the oxide layer of target material surface to remove it
After remove baffle plate.Plated film time is set to 50s, obtained silver nanoparticle film thickness about 50nm, obtains sample B.
Embodiment 3
The present embodiment is compared with Example 1 compared with except integrated different types of nano thin-film in step S2, remaining step is equal
It is identical.Step S2 is specially in the present embodiment：
S2, integrated gold nanometer film：Using resistance-type thermal evaporation plated film instrument (Wuhan Na Mei Science and Technology Ltd.s), in sample
Titanium deposition/gold nanometer film on A surfaces, wherein adhesion layer titanium nanometer film thickness are 2nm, and gold nanometer film thickness is 50nm, is obtained
Obtain sample B.
Embodiment 4
The present embodiment compared with Example 1 compared with, except the thickness of silver nanoparticle film integrated in step S2 has difference, remaining
Step all same.Step S2 is specially in the present embodiment：
S2, integrated silver nanoparticle film：Using resistance-type thermal evaporation plated film instrument (Wuhan Na Mei Science and Technology Ltd.s), in sample
Titanium deposition/silver nanoparticle film on A surfaces, wherein adhesion layer titanium nanometer film thickness are 2nm, and silver nanoparticle film thickness is 80nm, is obtained
Obtain sample B.
Embodiment 5
Compared with the step S3 in embodiment 1, except on step S3 on a silicon surface silver nanoparticle film in the present embodiment
The structure of delineation is different, remaining step all same.Step S3 is specially in the present embodiment：
S3, mechanical scratching silver nanoparticle film：Using Multi-contact micro-nano technology equipment, using the curvature half at ball pen tip
Footpath is 0.3mm spherical balls, is displayed on sample B surface with the delineation outlet of 150mN load, by mechanical scratching to remove
The silverskin of part is delineated, so that the silicon face with linear array is shown, as sample C.
Embodiment 6
Compared with the step S3 in embodiment 1, step S3 uses different mechanical scratching modes in the present embodiment, remaining step
Rapid all same.Step S3 is specially in the present embodiment：
S3, delineation silver nanoparticle film：Directly by the way of hand-written, in the delineation of sample B surface to remove part silverskin, obtain
To the silverskin structure with interdigital shape.Silicon interdigital structure, as sample C are can obtain in conjunction with metal catalytic etching technics.
Embodiment 7
Compared with the step S3 in embodiment 1, step S3 delineates silver nanoparticle using different needle points in the present embodiment
Film, remaining step all same.Step S3 is specially in the present embodiment：
S3, mechanical scratching silver nanoparticle film：Using Multi-contact micro-nano technology equipment, radius of curvature is used for 50 μm of gold
Hard rock needle point, interdigital structure is depicted on sample B surface with 150mN load, and part is delineated to remove by mechanical scratching
Silverskin, so as to show the silicon face with interdigital structure, as sample C.
One of ordinary skill in the art will be appreciated that embodiment described here is to aid in reader and understands this hair
Bright principle, it should be understood that protection scope of the present invention is not limited to such especially statement and embodiment.This area
Those of ordinary skill can make according to these technical inspirations disclosed by the invention various does not depart from the other each of essence of the invention
Plant specific deformation and combine, these deformations and combination are still within the scope of the present invention.
Claims (10)
1. a kind of silicon micro/nano structure preparation method etched based on mechanical scratching and metal catalytic, it is characterised in that：This method bag
Include following steps：
S1, silicon chip pretreatment：By silicon wafer surface cleaning, totally drying obtains sample A afterwards；
S2, integrated noble metal nano film：Deposited on sample A surface after one layer of adhesion layer, then in your integrated gold of its surface
Belong to nano thin-film, obtain sample B；
S3：Mechanical scratching noble metal nano film：Delineation processing is carried out on sample B surface using mechanical scratching, to remove
The noble metal nano film of part is delineated, there is the sample C of setting character pattern arbitrarily needing position to obtain surface；
S4, prepare silicon it is micro-/micro-nano structure：In the mixed solution that sample C is put into hydrofluoric acid and hydrogen peroxide, it is performed etching,
The silicon micro-nano structure with high-aspect-ratio can be obtained.
2. the silicon according to claim 1 etched based on mechanical scratching and metal catalytic is micro-/micro-nano structure preparation method, it is special
Levy and be：In the step S4, after the completion of etching, using deionized water to sample rinse after, be put into concentrated nitric acid etching 2~
5min reuses deionized water rinse to remove the noble metal nano film of remained on surface.
3. the silicon according to claim 1 etched based on mechanical scratching and metal catalytic is micro-/micro-nano structure preparation method, it is special
Levy and be：In the step S1, Wafer Cleaning specific method is：Silicon chip is put into acetone soln first and is cleaned by ultrasonic to remove
After surface organic matter, then deionized water cleaning, further it is cleaned by ultrasonic silicon chip with alcohol to remove impurities on surface of silicon chip, again finally
With deionized water cleaning sample repeatedly.
4. the silicon according to claim 1 etched based on mechanical scratching and metal catalytic is micro-/micro-nano structure preparation method, it is special
Levy and be：The noble metal nano film is one in silver nanoparticle film, platinum nano thin-film, copper nano thin-film or gold nanometer film
Plant or a variety of.
5. the silicon according to claim 1 etched based on mechanical scratching and metal catalytic is micro-/micro-nano structure preparation method, it is special
Levy and be：The thickness of the noble metal nano film is 10~80nm.
6. according to any described silicon etched based on mechanical scratching and metal catalytic of claim 1-5 it is micro-/micro-nano structure preparation side
Method, it is characterised in that：Adhesion layer in the step S2 is metal film, and thickness is 1~5nm.
7. according to any described silicon etched based on mechanical scratching and metal catalytic of claim 6 it is micro-/micro-nano structure preparation method,
It is characterized in that：The metal film is one kind in titanium nanometer film, chromium nanometer film, nickel nanometer film or titanizing tungsten nanometer film.
8. according to any described silicon etched based on mechanical scratching and metal catalytic of claim 1-5 it is micro-/micro-nano structure preparation side
Method, it is characterised in that：The workpiece that the mechanical scratching is more than noble metal nano film using hardness enters to sample B surface
Row processing.
9. it is according to claim 8 close the silicon that mechanical scratching and metal catalytic etch it is micro-/micro-nano structure preparation method, its feature
It is：The spherical that the hardness is more than noble metal nano film is Diamond tip or spherical steel ball.
10. the silicon according to claim 8 etched based on mechanical scratching and metal catalytic is micro-/micro-nano structure preparation method, its
It is characterised by：The mechanical scratching is carried out using Multi-contact micro-nano technology equipment or artificial delineation mode is carried out.
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| CN111559734A (en) * | 2020-05-20 | 2020-08-21 | 内江师范学院 | Manufacturing method of multi-frequency CMUT device and multi-frequency CMUT device |
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