CN107240603A - A kind of short-circuit anode LIGBT of thin SOI - Google Patents
A kind of short-circuit anode LIGBT of thin SOI Download PDFInfo
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- CN107240603A CN107240603A CN201710421002.1A CN201710421002A CN107240603A CN 107240603 A CN107240603 A CN 107240603A CN 201710421002 A CN201710421002 A CN 201710421002A CN 107240603 A CN107240603 A CN 107240603A
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- 238000010276 construction Methods 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 9
- 230000001413 cellular effect Effects 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention belongs to power semiconductor technologies field, and in particular to a kind of short-circuit anode LIGBT of thin SOI.The present invention is introduced with P+ anode regions N+ anode regions arranged side by side, the N-type island in the side positioned at P+ anode regions (9) and N+ anode regions (10) close cathode construction, again introducing Disjunct distribution in the vertical compared to traditional SOI base LIGBT.In the bar state, the endless fully- depleted in N-type island can effectively end depletion region and further expand, prevent its punch-through breakdown new device.Initial period is being opened, electronic current flows through the high resistant drift region between N-type island, and adjacent N-type island.Interruption N-type island can increase the distributed resistance of anode tap side compared to traditional continuous N cushions, device is entered double pole mode under smaller current.Beneficial effects of the present invention are that, relative to traditional LIGBT, the present invention has high speed, the premium properties of low turn-off power loss；Compared to conventional short-circuit anode LIGBT, the present invention can also eliminate snapback effects under small cellular size.
Description
Technical field
The invention belongs to power semiconductor technologies field, it is related to a kind of thin SOI short circuit anode LIGBT (Lateral
Insulated Gate Bipolar Transistor, landscape insulation bar double-pole-type transistor).
Background technology
IGBT has MOSFET high input impedances and the low conduction voltage drops two of BJT concurrently as the Typical Representative of power electronic devices
Aspect advantage, it is in the solitary advantage of the various fields such as track traffic, intelligent grid, household electrical appliance and base station.SOI bases LIGBT
Because using medium isolation, its Leakage Current reduces, and parasitic capacitance is smaller, and Radiation hardness is stronger.In addition, transversal I GBT
(LIGBT) be easy to it is integrated, promote SOI-LIGBT turn into monolithic power integrated chip core component.
Conductivity modulation effect when the low conduction voltage drops of IGBT have benefited from opening in drift region, so as to obtain relatively low conducting pressure
Drop and conduction loss.During shut-off, the electronic barrier of anode region forces the carrier for being stored in drift region to pass through compound disappearance, shut-off
Speed slows down and turn-off power loss increase, limits IGBT frequency applications.Therefore, the contradiction of conduction voltage drop and turn-off power loss is still
IGBT basic problem.Alleviating the two contradictory relation mainly has following three kinds of technologies.First, lifetime control techniques can make drift region
Interior carrier recombination velocity accelerates, and reduces device turn-off power loss.However, when such a technology can also make break-over of device in drift region
Nonequilibrium carrier concentration reduces, and conduction voltage drop rises.Second, the accumulation layer acted on hole barrier is introduced in cathode terminal,
The drift region carrier concentration close to cathode terminal side is raised, reduces conduction voltage drop, but its nonequilibrium carrier still needs to be combined
Disappear, turn-off speed remains unchanged slower.Third, short-circuit anode technology can accelerate carrier extraction, it is ensured that high conductivity modulation effect
Meanwhile, also obtain the good compromise of conduction voltage drop and turn-off power loss.But the introducing of short-circuit anode construction, can bring to device again
Snapback effects, the uniformity of influence device current distribution.
SOI substrate being used current LIGBT more.Compared with silicon substrate or thick-layer SOI types LIGBT, thin SOI types LIGBT
With clear advantage：Junction isolation technology or deep medium isolation technology being used silicon substrate or thick-layer SOI types LIGBT more,
Parasitic parameter is big, and technique realizes complicated, manufacturing cost height；Thin SOI types LIGBT is easy to use Jie with characteristic is electrically isolated completely
Matter isolation technology, isolation area is narrow, and parasitic parameter is small, and the high-low voltage device process compatible easily with power integrated circuit, system
Cause low.
The present invention proposes a kind of short-circuit anode constructions of new thin SOI, and snapback effects can be eliminated under small cellular size
Should, while obtaining low conduction voltage drop and low turn-off power loss.
The content of the invention
The purpose of the present invention, aiming above mentioned problem, proposes a kind of short-circuit anode LIGBT of thin SOI.
The technical scheme is that：
A kind of short-circuit anode LIGBT of thin SOI, including substrate P 1, oxygen buried layer 2 and the top being cascading from bottom to top
Semiconductor layer；Along device horizontal direction, described top semiconductor layer have successively from device side to opposite side cathode construction,
P-well region 4, N drift regions 3 and anode construction；The cathode construction includes P+ body contact zones 6 and N+ cathodic regions 5, the P+ bodies contact
The bottom in area 6 is contacted with oxygen buried layer 2, and the N+ cathodic regions 5 are located at the upper strata of p-well region 4, and N+ cathodic regions 5 and P+ body contact zones 6 and
P-well region 4 is contacted, and P+ body contact zones 6 are contacted with p-well region 4；The common exit in P+ body contact zones 6 and N+ cathodic regions 5 is negative electrode；
The p-well region 4 is contacted with N drift regions 3；The upper surface of p-well region 4 between the N+ cathodic regions 5 and N drift regions 3 has grid
Structure；The grid structure includes gate medium 7 and the gate polysilicon 8 being covered on gate medium 7, the exit of gate polysilicon 8
For gate electrode；The anode construction includes the P+ anode regions 9 and N+ anode regions 10 being alternately arranged along device longitudinal direction, the P+
Anode region 9 and N+ anode regions 10 contacted with N drift regions 3 and oxygen buried layer 2, and the P+ anode regions 9 and N+ anode regions 10 are drawn jointly
It is anode to go out end；Characterized in that, also including N-type island 11, the N-type island 11 is located at P+ anode regions 9 and N+ anode regions 10 are close
The side of cathode construction, along device longitudinal direction, the N-type island 11 arranges for Disjunct distribution, and the bottom on N-type island 11 is with burying oxygen
Layer 2 is contacted, and is N drift regions 3 between adjacent N-type island 11.
In such scheme, the device horizontal direction is located at same level with device longitudinal direction and is mutually perpendicular to, with
Device vertical direction constitutes three-dimensional cartesian coordinate system, corresponding with Fig. 1 to be, device horizontal direction correspondence X-axis, device Vertical Square
To correspondence Y-axis, device longitudinal direction correspondence Z axis.
Further, the N-type island 11 and P+ anode regions 9 and N+ anode regions 10 are spaced by N drift regions 3 in the horizontal.
Further, the N-type island 11 is contacted with P+ anode regions 9 and N+ anode regions 10.
Further, the longitudinal pitch on adjacent N-type island 11 is equal；
Further, the longitudinal pitch on adjacent N-type island 11 is unequal, and its longitudinal pitch is closer to N+ anode regions 10
Place is bigger.
Beneficial effects of the present invention are, relative to traditional short-circuit anode LIGBT, and the present invention can press down under small cellular size
Snapback effects processed, while the good compromise of conduction voltage drop and turn-off power loss is obtained, and the height easily with power integrated circuit
Voltage device process compatible, low manufacture cost.
Brief description of the drawings
Fig. 1 is the structure cell schematic diagram of embodiment 1 proposed by the present invention；
Fig. 2 is the structure cell schematic diagram of embodiment 2 proposed by the present invention；
Fig. 3 is the structure cell schematic diagram of embodiment 3 proposed by the present invention；
Fig. 4 is the structure cell schematic diagram of embodiment 4 proposed by the present invention.
Embodiment
With reference to the accompanying drawings and examples, technical scheme is described in detail：
Embodiment 1
As shown in figure 1, the structure of this example includes substrate P 1, oxygen buried layer 2 and the top half being cascading from bottom to top
Conductor layer；Along device horizontal direction, described top semiconductor layer has cathode construction, P successively from device side to opposite side
Well region 4, N drift regions 3 and anode construction；The cathode construction includes P+ body contact zones 6 and N+ cathodic regions 5, the P+ bodies contact
The bottom in area 6 is contacted with oxygen buried layer 2, and the N+ cathodic regions 5 are located at the upper strata of p-well region 4, and N+ cathodic regions 5 and P+ body contact zones 6 and
P-well region 4 is contacted, and P+ body contact zones 6 are contacted with p-well region 4；The common exit in P+ body contact zones 6 and N+ cathodic regions 5 is negative electrode；
The p-well region 4 is contacted with N drift regions 3；The upper surface of p-well region 4 between the N+ cathodic regions 5 and N drift regions 3 has grid
Structure；The grid structure includes gate medium 7 and the gate polysilicon 8 being covered on gate medium 7, the exit of gate polysilicon 8
For gate electrode；The anode construction includes the P+ anode regions 9 and N+ anode regions 10 being alternately arranged along device longitudinal direction, the P+
Anode region 9 and N+ anode regions 10 contacted with N drift regions 3 and oxygen buried layer 2, and the P+ anode regions 9 and N+ anode regions 10 are drawn jointly
It is anode to go out end；Also include N-type island 11, the N-type island 11 is located at P+ anode regions 9 and N+ anode regions 10 close to the one of cathode construction
Side, along device longitudinal direction, the N-type island 11 is arranged for Disjunct distribution, and the bottom on N-type island 11 is contacted with oxygen buried layer 2, adjacent
It is N drift regions 3 between N-type island 11；The longitudinal pitch on the structure ZhongNXing islands 11 of this example is equal.
The operation principle of this example is：
The N-type island of devices use Disjunct distribution shown in this example replaces traditional continuous N cushions, it is ensured that electric field ends
Increase the distributed resistance of anode region while effect, device is put into double pole mode at low currents, effectively suppress
Snapback effects.
Embodiment 2
As shown in Fig. 2 this example is compared with the structure of embodiment 1, difference is the longitudinal pitch on this example ZhongNXing islands 11 not phase
Deng snapback effects can be eliminated under smaller longitudinal cellular size.
Embodiment 3
As shown in figure 3, this example is compared with the structure of embodiment 1, difference is in this example, N-type island and P+ anode regions 9 and N+
Anode region 10 contacts with each other.
Embodiment 4
As shown in figure 4, this example is compared with the structure of embodiment 1, difference is in this example, N-type island and P+ anode regions 9 and N+
Anode region 10 is that longitudinal pitch contact with each other and N-type island 11 is unequal.Compared with Example 3, this example can be indulged in smaller
Snapback effects are eliminated under to cellular size.
Claims (5)
1. a kind of short-circuit anode LIGBT of thin SOI, including substrate P (1), oxygen buried layer (2) and the top being cascading from bottom to top
Portion's semiconductor layer；Along device horizontal direction, described top semiconductor layer has negative electrode knot successively from device side to opposite side
Structure, p-well region (4), N drift regions (3) and anode construction；The cathode construction includes P+ body contact zones (6) and N+ cathodic regions (5),
The bottom of the P+ body contact zones (6) is contacted with oxygen buried layer (2), and the N+ cathodic regions (5) are located at p-well region (4) upper strata, and N+ is cloudy
Polar region (5) is contacted with P+ body contact zones (6) and p-well region (4), and P+ body contact zones (6) are contacted with p-well region (4)；P+ body contact zones
(6) and N+ cathodic regions (5) common exit be negative electrode；The p-well region (4) contacts with N drift regions (3)；In the N+ negative electrodes
P-well region (4) upper surface between area (5) and N drift regions (3) has grid structure；The grid structure include gate medium (7) and
The gate polysilicon (8) on gate medium (7) is covered in, the exit of gate polysilicon (8) is gate electrode；The anode construction includes
The P+ anode regions (9) and N+ anode regions (10) being alternately arranged along device longitudinal direction, the P+ anode regions (9) and N+ anode regions
(10) contacted with N drift regions (3) and oxygen buried layer (2), the common exit of the P+ anode regions (9) and N+ anode regions (10) is sun
Pole；Characterized in that, also including N-type island (11), it is close that the N-type island (11) is located at P+ anode regions (9) and N+ anode regions (10)
The side of cathode construction, along device longitudinal direction, the N-type island (11) is Disjunct distribution arrangement, and the bottom of N-type island (11) with
Oxygen buried layer (2) is contacted, and is N drift regions (3) between adjacent N-type island (11).
2. the short-circuit anode LIGBT of a kind of thin SOI according to claim 1, it is characterised in that the N-type island (11) and P+
Anode region (9) and N+ anode regions (10) are spaced by N drift regions (3) in the horizontal.
3. the short-circuit anode LIGBT of a kind of thin SOI according to claim 1, it is characterised in that the N-type island (11) and P+
Anode region (9) and N+ anode regions (10) contact.
4. the short-circuit anode LIGBT of a kind of thin SOI according to Claims 2 or 3, it is characterised in that adjacent N-type island (11)
Longitudinal pitch is equal.
5. the short-circuit anode LIGBT of a kind of thin SOI according to Claims 2 or 3, it is characterised in that adjacent N-type island (11)
Longitudinal pitch is unequal, and its longitudinal pitch is bigger closer to N+ anode regions (10) place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710421002.1A CN107240603A (en) | 2017-06-07 | 2017-06-07 | A kind of short-circuit anode LIGBT of thin SOI |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710421002.1A CN107240603A (en) | 2017-06-07 | 2017-06-07 | A kind of short-circuit anode LIGBT of thin SOI |
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| Publication Number | Publication Date |
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| CN107240603A true CN107240603A (en) | 2017-10-10 |
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| CN201710421002.1A Pending CN107240603A (en) | 2017-06-07 | 2017-06-07 | A kind of short-circuit anode LIGBT of thin SOI |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113270474A (en) * | 2021-04-08 | 2021-08-17 | 西安电子科技大学 | Short-circuit anode lateral insulated gate bipolar transistor controlled by anode depletion region and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050035424A1 (en) * | 2001-11-21 | 2005-02-17 | Intersil Americas Inc. | Lateral MOSFET structure of an integrated circuit having separated device regions |
| CN101431097A (en) * | 2008-12-11 | 2009-05-13 | 电子科技大学 | Thin layer SOILIGBT device |
| CN104425579A (en) * | 2013-08-28 | 2015-03-18 | 无锡华润上华半导体有限公司 | Silicon on insulator reverse conduction lateral insulated gate bipolar transistor and manufacturing method thereof |
| CN106252399A (en) * | 2016-08-31 | 2016-12-21 | 电子科技大学 | A kind of inverse conductivity type IGBT |
-
2017
- 2017-06-07 CN CN201710421002.1A patent/CN107240603A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050035424A1 (en) * | 2001-11-21 | 2005-02-17 | Intersil Americas Inc. | Lateral MOSFET structure of an integrated circuit having separated device regions |
| CN101431097A (en) * | 2008-12-11 | 2009-05-13 | 电子科技大学 | Thin layer SOILIGBT device |
| CN104425579A (en) * | 2013-08-28 | 2015-03-18 | 无锡华润上华半导体有限公司 | Silicon on insulator reverse conduction lateral insulated gate bipolar transistor and manufacturing method thereof |
| CN106252399A (en) * | 2016-08-31 | 2016-12-21 | 电子科技大学 | A kind of inverse conductivity type IGBT |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113270474A (en) * | 2021-04-08 | 2021-08-17 | 西安电子科技大学 | Short-circuit anode lateral insulated gate bipolar transistor controlled by anode depletion region and manufacturing method thereof |
| CN113270474B (en) * | 2021-04-08 | 2022-12-27 | 西安电子科技大学 | Short-circuit anode lateral insulated gate bipolar transistor controlled by anode depletion region and manufacturing method thereof |
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