CN1072396C - Bead array type IC package method without base and tin bead - Google Patents
Bead array type IC package method without base and tin bead Download PDFInfo
- Publication number
- CN1072396C CN1072396C CN97104998A CN97104998A CN1072396C CN 1072396 C CN1072396 C CN 1072396C CN 97104998 A CN97104998 A CN 97104998A CN 97104998 A CN97104998 A CN 97104998A CN 1072396 C CN1072396 C CN 1072396C
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- CN
- China
- Prior art keywords
- exempting
- electrodeposited coating
- dry film
- integrated circuit
- array type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Electroplating Methods And Accessories (AREA)
Abstract
The present invention discloses a packaging method of ball array type integrated circuts without substrates or tin balls. The method of the present invention mainly comprises: grooves which are used as subsequent contact points are formed on a copper sheet through steps of dry film coverage and semi-etching; then, a first electroplated layer is formed in the positions of the grooves, the steps of dry film removal, coverage of another dry film and electroplating are orderly carried out to form inner contact points which upwards and convexly extends from the grooves, a welding pad area is treated by the steps of electroplating, chip planting, wire etching, glue painting, etching to remove a nethermost copper sheet and green paint coverage, integrated circuit packaging which uses formed the first electroplated layer as an external contact point is formed, and no substrate exists in the interior of the integrated circuit packaging.
Description
The present invention relates to a kind of rabbit substrate and exempt from the bead array type integrated circuit package method of tin ball, be a kind of method for packing that need not to use bead array type (BGA) integrated circuit of substrate and Wuxi ball, reach and make external packing more become small and exquisite and preferable structural strength is provided.
The kenel of integrated circuit external packing now is to reach the needs that meet different occasions, various different external packing is promptly arranged, such as DIP, PGA, BGA, TAB ... etc. pattern, discuss with the external packing of bead array type (BGA) (BALL GRID ARRAY) integrated circuit, promptly form most tin ball contacts of arranging in length and breadth in the bottom surface of integrated circuit external packing, and heat supply melting welding is connected on the corresponding contact of circuit board, yet this kind packing kenel, owing to need suitably support and be provided as the medium of tin ball and chip during making, generally all need as " supporting substrate " with circuit board, yet the encapsulation kenel that adds people's substrate, promptly cause the external packing dimensional thickness to increase, this measure, when requiring to use on comparatively harsh notebook or the inferior notebook computer for Package size, just there is the problem that too takes up room to exist, moreover, this tin ball that is attached to the bottom surface also is a kind of kenel that adds, the structural strength that it provided is also not enough, be subjected under the big tension, there is the defective easily cause the tin ball to peel off, in addition improved necessity is also arranged in the lump.
The present invention's thickness that encapsulation is derived in view of BGA now is thicker and connect the shortcoming of the structural strength deficiency of being derived by the tin ball, and a kind of bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball is provided.
Main purpose of the present invention is: a kind of bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball is provided, it is the bead array type integrated circuit external packing kenel that forms the no substrate in a kind of inside and need not additional tin ball, make external packing more become compact by omitting substrate, electroplate salient point with plating formation during making by encapsulation in addition and reach the effect that is same as traditional tin ball, to electroplate salient point is to be embedded in inner kenel, and improves the contact mechanical strength.
Technical program of the present invention lies in, a kind of bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball is provided, its characteristics are to comprise:
On copper sheet, cover for the dry film that forms external connector, and the copper sheet surface that is not covered by dry film is imposed slightly microetch, forming the step that summary is round recessed,
This each groove position is imposed plating, and forms the step that covers round shaped grain shape first electrodeposited coating in each groove,
Remove the step of aforementioned dry film,
Cover the circuit dry film, and to the copper sheet central part and corresponding to electroplating the step that forms second electrodeposited coating in the top of aforementioned first electrodeposited coating,
Row covers another dry film again, and forms pad zone at the both-side opening of the copper sheet central part that forms second electrodeposited coating, the step that this pad zone is exposed,
This pad zone is electroplated the step that forms the 3rd electrodeposited coating,
Remove the step of aforementioned each layer dry film,
Implant the step of chip, go between bonding and sealing, and
The etched bottom surface copper sheet, and make the bottom surface of each first electrodeposited coating expose the step that applies green lacquer with.
The described bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball, its characteristics are: this first electrodeposited coating is from the bottom to top in regular turn for to form with combinations of materials such as nickel, gold, nickel, copper.
The described bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball, its characteristics are: after this covers the step of green lacquer, more comprise the step of peeling off the first electrodeposited coating local material layer.
The described bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball, its characteristics are: this material layer of being stripped from is a nickel.
The described bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball, its characteristics are: this second electrodeposited coating is to combine with nickel, copper product.
The described bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball, its characteristics are: the 3rd electrodeposited coating is gold.
Design features of the present invention is, on its packaged type mainly be in advance on a copper sheet through cover dry film with through etching partially step, and on copper sheet, form the contact groove, secondly, electroplate formation first electrodeposited coating (being provided as contact uses) in groove location, then, for after removing dry film and covering another dry film, promptly electroplate and form second electrodeposited coating that raises up corresponding to each top, first electrodeposited coating position, secondly, then for after imposing plating step at weld pad position for the peripheral position of sticking together chip, can plant chip in regular turn, lead-in wire bonding and sealing step, at last, after then the copper sheet of removing basal surface position for etching only stays first electrodeposited coating of this evagination and applies the step of green lacquer, promptly finish encapsulation step, in above-mentioned steps, promptly utilize previous copper sheet as the support during making, and make its inside be the light and handy packing pattern of no substrate, and, more there is not the problem with the structural strength deficiency of easily peeling off of traditional tin ball contact during processing procedure because this first electrodeposited coating is to form in the lump firmly to be embedded in inner kenel.
Further specify specific structural features of the present invention and purpose below in conjunction with accompanying drawing.
Figure IA-K is a method step schematic diagram of the present invention.
The method for packing that the present invention can make final finished obtain no substrate and exempt from tin ball-type formula, be roughly shown in Figure 1A-K, at first be through covering dry film 20 and the step that this position of not covered by dry film 20 is etched partially on the copper sheet 10 of Figure 1A, this etches partially step promptly is that copper sheet 10 is carried out slightly etching operation, and make and form most grooves 11 on the copper sheet 10, and each groove 11 position is the position (being detailed later) of external contact, secondly, shown in Figure 1B, also be to carrying out nickel plating in regular turn in each groove 11 position by previous dry film 20, gold-plated, nickel plating and zinc-plated and form and to have electrodeposited coating 30 shown in Figure 1B that multilayer material forms, and after Fig. 1 C removes this aforementioned dry film 20, then in addition in Fig. 1 D, cover another circuit dry film 40, and the sub-film 40 of this circuit only covers on the position between each first electrodeposited coating 30, and then with this circuit dry film 40 as shade, and (this electrodeposited coating is with nickel at the middle position of copper sheet 10 and second electrodeposited coating 50 that forms upwards projection corresponding to the top position and the circuit position of each first electrodeposited coating 30, copper and gold copper-base alloy are formed).Then, shown in Fig. 1 E, under the state of not removing this dry film 40, cover another dry film 41 again, and only form opening for weld pad (BOND PAD) position as chip at central two side positions, and in Fig. 1 F, this pad zone is carried out gold-plated step, fill up the 3rd electrodeposited coating 52 of this opening with formation, so in Fig. 1 G through removing aforementioned two dry films 41, after 40, can carry out second electrodeposited coating, 50 positions that raise up by central authorities as Fig. 1 H through covering elargol 90, stick together the step of the bonding 61 that goes between between chip 60 and formed the 3rd electrodeposited coating 52 of pad zone to chip 60 and periphery.Then shown in Fig. 1 I; after the sealing step of the glue 70 of surface coverage protection outside; be that summary forms integrated circuit encapsulation; at last; in Fig. 1 J; etching is removed and is positioned at the copper sheet 10 of bottom surface and the step that goes up green lacquer 80; in this step; then only stay this previous first outstanding electrodeposited coating 30 that forms downwards at basal surface position; at last, then shown in Fig. 1 K, through peeling off the nickel material on first electrodeposited coating, 30 surfaces of exposing attached to this each; after its inner gilding is exposed, promptly finish whole encapsulation flow process.
And during aforementioned packaging operation; promptly use the mechanical support of this copper sheet 10 as middle flow process; but behind encapsulating; can utilize protection glue 70 that due support strength is provided; therefore; in subsequent step; then can directly these copper sheet 10 etchings be removed; pack and form a kind of BGA integrated circuit that supports base stage that do not contain fully; so; promptly have and reduce packing thickness and make the external packing frivolous small and exquisite effect that more becomes; and by aforementioned final finished of the present invention (as Fig. 1 K), each first electrodeposited coating 30 that is exposed by the bottom surface is a kind of kenel that is embedded in inside, and this kind kenel is compared with the mode that tradition adds the tin ball; more improved contact position mechanical strength and preferable tensile strength is provided, and be a design more more progressive than conventional process.
And with regard to the technical characterictic of method for making, except by aforementioned copper sheet as the support during making, more dexterously copper sheet 10 is etched partially and form groove 11, in groove 11, electroplate to form and be the first granular electrodeposited coating of semicircle, make it after subsequent etch is removed this copper sheet 10, first electrodeposited coating that is the round shaped grain shape exposes and uses as external connector, and its method for packing has more intention and ingenious.
Claims (6)
1. bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball is characterized in that comprising:
On copper sheet, cover for the dry film that forms external connector, and the copper sheet surface that is not covered by dry film is imposed slightly microetch, forming the step that summary is round recessed,
This each groove position is imposed plating, and forms the step that covers round shaped grain shape first electrodeposited coating in each groove,
Remove the step of aforementioned dry film,
Cover the circuit dry film, and to the copper sheet central part and corresponding to electroplating the step that forms second electrodeposited coating in the top of aforementioned first electrodeposited coating,
Row covers another dry film again, and forms pad zone at the both-side opening of the copper sheet central part that forms second electrodeposited coating, the step that this pad zone is exposed,
This pad zone is electroplated the step that forms the 3rd electrodeposited coating,
Remove the step of aforementioned each layer dry film,
Implant the step of chip, go between bonding and sealing, and
The etched bottom surface copper sheet, and make the bottom surface of each first electrodeposited coating expose the step that applies green lacquer with.
2. the bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball according to claim 1 is characterized in that: this first electrodeposited coating is from the bottom to top in regular turn for to form with combinations of materials such as nickel, gold, nickel, copper.
3. the bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball according to claim 1 and 2 is characterized in that: after this applies the step of green lacquer, more comprise the step of peeling off the first electrodeposited coating local material layer.
4. the bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball according to claim 3 is characterized in that: this material layer of being stripped from is a nickel.
5. the bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball according to claim 1 is characterized in that: this second electrodeposited coating is to combine with nickel, copper product.
6. the bead array type integrated circuit package method of exempting from substrate and exempting from the tin ball according to claim 1 is characterized in that: the 3rd electrodeposited coating is gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97104998A CN1072396C (en) | 1997-04-04 | 1997-04-04 | Bead array type IC package method without base and tin bead |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97104998A CN1072396C (en) | 1997-04-04 | 1997-04-04 | Bead array type IC package method without base and tin bead |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1198004A CN1198004A (en) | 1998-11-04 |
| CN1072396C true CN1072396C (en) | 2001-10-03 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97104998A Expired - Fee Related CN1072396C (en) | 1997-04-04 | 1997-04-04 | Bead array type IC package method without base and tin bead |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1072396C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100370589C (en) * | 2005-04-07 | 2008-02-20 | 江苏长电科技股份有限公司 | Novel integrated circuit or discrete components ultra-thin non-pin packing technology and packing arrangement |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100442465C (en) * | 2005-09-15 | 2008-12-10 | 南茂科技股份有限公司 | Producing process for chip packaging body without kernel dielectric layer |
| CN102111962B (en) * | 2009-12-24 | 2012-10-03 | 北大方正集团有限公司 | Method and device for manufacturing semi-circular thin line |
| CN102689872B (en) * | 2012-04-27 | 2015-12-09 | 深圳光启高等理工研究院 | A kind of processing method of Meta Materials |
| CN106163108A (en) * | 2015-04-10 | 2016-11-23 | 深圳市安特讯科技有限公司 | Circuit and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927563A (en) * | 1995-05-09 | 1997-01-28 | Mitsui High Tec Inc | Manufacture of semiconductor device |
-
1997
- 1997-04-04 CN CN97104998A patent/CN1072396C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927563A (en) * | 1995-05-09 | 1997-01-28 | Mitsui High Tec Inc | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100370589C (en) * | 2005-04-07 | 2008-02-20 | 江苏长电科技股份有限公司 | Novel integrated circuit or discrete components ultra-thin non-pin packing technology and packing arrangement |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1198004A (en) | 1998-11-04 |
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Granted publication date: 20011003 |