CN107238819A - A kind of signal amplitude control device with temperature compensation function - Google Patents
A kind of signal amplitude control device with temperature compensation function Download PDFInfo
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- CN107238819A CN107238819A CN201710423900.0A CN201710423900A CN107238819A CN 107238819 A CN107238819 A CN 107238819A CN 201710423900 A CN201710423900 A CN 201710423900A CN 107238819 A CN107238819 A CN 107238819A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
- G01S7/282—Transmitters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Computer Networks & Wireless Communication (AREA)
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- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
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Abstract
The invention discloses a kind of signal amplitude control device with temperature compensation function, it is related to the signal control field of Radar-Communication system, it includes attenuator and temperature-compensated voltage source；The output end in described temperature-compensated voltage source and the control end of attenuator are connected；Detect operating ambient temperature in temperature-compensated voltage source, and different environment temperatures is converted into the control end that different control voltages supply attenuator, attenuation then under different environment temperatures, due to the compensating action in temperature-compensated voltage source, is kept constant by attenuator.Advantage of the invention is that simple in construction, easy realize, it is not necessary to extra software control, it is not required that manual intervention is that stable and accurate signal amplitude control can be achieved.
Description
Technical field
The present invention relates to the signal control field of Radar-Communication system, more particularly to a kind of letter with temperature compensation function
Number amplitude control apparatus.
Background technology
The application of high performance beam system and phased array radar system in modern war is vital.And
There is the multi-functional transceiving chip of width phase control function in receiving-transmitting chain, be to realize pinpoint accuracy beam system and thunder
Up to the critical component of system.The power and beam directional of the transmission signal of machine system are all by multiple letters in adjustment system
Respective specific signal amplitude and phase of passage in number passage, is realized by the mode of power combing.
And attenuator is as the important component of multi-functional transceiving chip, the accurate control of signal amplitude is served to
Close important effect；The numerical-control attenuator of main flow realizes that technique includes GaAs (GaAs) and complementary metal oxide semiconductor
(CMOS).And the CMOS technology based on silicon substrate turns into the focus of research with the advantage of low cost and high integration.
Multifunction chip application environment is varied, and temperature change acutely, therefore ensures that attenuator declines at different temperatures
The constant of decrement is very important.And the performance of all kinds of devices especially MOSFET and resistance in stepping numerical-control attenuator by
Temperature influence is very big, it is difficult to constant attenuation is realized within the scope of wider temperature.
Current paper both domestic and external seldom refers to the technology in terms of the attenuation temperature-compensating of attenuator with patent.Greatly
Amount patent and document discuss how using the attenuation variation with temperature of attenuator come the ripple of gain in compensation system link
It is dynamic, and do not have to attenuator attenuation itself with the fluctuation of temperature and take indemnifying measure, the opinion of correlation is not searched yet
Text and patent.It is published in《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》On it is entitled
“Amplitude/Phase Temperature Compensation Attenuators With Variable-Q FET
Resonators " article and《1990IEEE MTT-S Digest》On entitled " A Temperature-Compensated
Linearizing Technique for MMIC Attenuators Utilizing GaAs MESEFTS as Voltage-
Variable Resistors " article, all describes the step attenuator that a kind of attenuation is varied with temperature, and author passes through
The grid voltage varied with temperature is provided, changes the conducting resistance of transistor in attenuation units, the purpose for changing attenuation is reached.
U.S. Patent Application No. be US7521980B2 in disclose it is a kind of not with temperature and technique change voltage-controlled attenuator circuit；Should
The fader section of circuit is divided into simple resistor voltage divider circuit, and fixed resistance is connected with as variable resistor FET, field effect
Should pipe both end voltage exported as attenuator, fet gate connection controlled variable signal；To eliminate process deviation to temperature
Influence, the patent introduces the grid that the generation of bandgap voltage reference and operational amplification circuit is unrelated with technique and is not affected by temperature
Pole control voltage signal, the control signal only has with the input reference voltage of operational amplification circuit and the ratio of input control voltage
Close.U.S. Patent Application No. is wrapped to disclose a kind of attenuator circuit for compensating attenuation and link gain in US8988127B2
The attenuation network and temperature-compensation circuit being made up of FET are included, its structural representation is as shown in Figure 1.The patent claims, temperature
The output variable voltage of degree compensation circuit changes with temperature, the grid of FET, control in output voltage connection attenuator
The conducting resistance of FET under different temperatures, so as to reach that compensation environment temperature brings the purpose of change to attenuation.
Above-mentioned paper regulates and controls the switching voltage of nMOS switching tubes with patent by grid, and source-drain electrode DC voltage is general
It is identical with ground.This grid control circuit usually requires to be additionally provided electricity one higher than nMOS switching tube nominal operating voltages
Source voltage realizes grid temperature control circuit.
And attenuating device disclosed by the invention is then by function of temperature compensation control voltage and the voltage point of control FET break-make
Open, grid is only used as the control of conducting and shut-off, and the positive voltage of temperature-compensating is added in into source electrode and drain electrode, and this voltage is enough
Less than the nominal voltage of switch NMOS tube, source-drain electrode temperature control circuit typically just can be with corresponding nMOS pipes nominal voltage source, so that
Supply voltage one higher than nMOS switching tube nominal operating voltages need not be additionally provided.Due to it is this be biased in body source and
Reversed bias voltage is provided between body drain, this method also improves the linearity of switch nMOS pipes.The temperature-compensating of the attenuating device
Temperature change is converted into the control end that voltage change directly feeds attenuator by the thermo-sensitive resistor in power supply.Attenuator uses multidigit
Numerical control step-by-step system, each attenuation units control attenuation by the way of handover network, and attenuation range is big, and additional phase shift is small,
It is applied widely.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of signal amplitude with temperature compensation function
Control device, solve prior art provided using continuously adjustabe voltage inconvenience that control signal brings with attenuator declining in itself
The problem of decrement changes with the change of ambient temperature.
The purpose of the present invention is achieved through the following technical solutions：A kind of signal amplitude with temperature compensation function
Control device, it includes attenuator and temperature-compensated voltage source；The output end in described temperature-compensated voltage source and attenuator
Control end is connected；Operating ambient temperature is detected in temperature-compensated voltage source, and different environment temperatures is converted to different controls
Voltage supplies the control end of attenuator, and attenuator is then under different environment temperatures, because the compensation in temperature-compensated voltage source is made
With attenuation is kept into constant.
Further limit, described attenuator is digital control type step attenuator, the attenuation units cascaded successively by several
Composition, each attenuation units are equipped with input, output end and control end, the input and input signal of first attenuation units
Connection, the output end of first attenuation units is connected with the input of attenuation units thereafter, by that analogy, last decay
The output end of unit is the output end of whole attenuator, the control ends of each attenuation units with from temperature-compensated voltage source
Control signal is connected.
Further limit, described attenuation units are main by one or more decay branch roads and one or more controlling switches
Composition.
Further limit, described controlling switch is metal-oxide-semiconductor field effect transistor.
Further limit, the control voltage V that described temperature-compensated voltage source is exportedCTRLSource electrode and leakage with FET
Pole is connected, grid voltage VGThe break-make of FET is controlled, is connected between source electrode and drain electrode by high resistance and by temperature-compensating
Control voltage VCTRL'sControl, because of function of temperature compensation control voltage VCTRLVary with temperature, the voltage difference V between grid and source electrodeGS=
VG-VCTRLAlso change with temperature, and the voltage difference V between grid and source electrodeGSIt can ensure that and imitated in switch yard with the relation of temperature
Should pipe conducting when, conducting resistance keeps constant at different ambient temperatures.
Further limit, described temperature-compensated voltage source includes PTAT current source and operational amplifier, by temperature change
Output control voltage V is converted to by specific transfer functionCTRL。
Further limit, described attenuation units are the parallel connection type attenuation network being made up of Parallel Control switch and branch road of decaying
Network, described Parallel Control switch and decay branch road is located in ground leg.
Further limit, described attenuation units are by series connection control switch, Parallel Control switch and three decay branch roads
The T-shaped attenuation network of modified of composition, wherein, described Parallel Control switch and a decay branch road are located in ground leg,
Other two decay branch road is located in the two-arm branch road of T-shaped network, and described series connection control switch is connected across the defeated of attenuation units
Enter output end.
Further limit, described attenuation units are by series connection control switch, Parallel Control switch and three decay branch roads
The Pi type attenuation networks of composition, described Pi types attenuation network includes two to ground leg, each to ground leg by a parallel connection
Controlling switch and a decay branch road are constituted, and another decay branch road is located at signal and leads directly to branch road, described series connection control switch
It is connected across the input/output terminal of attenuation units.
The beneficial effects of the invention are as follows：A kind of signal amplitude control device with temperature compensation function has following excellent
Point：
1st, temperature change is converted into voltage change and directly feeds attenuator by the thermo-sensitive resistor in temperature-compensated voltage source
Control end, its simple in construction, easy realization.
2nd, attenuator uses multidigit numerical control step-by-step system, and each attenuation units control decay by the way of handover network
Amount, additional phase shift small and applied widely the characteristics of big with attenuation range.
3rd, the grid of the FET in each attenuation units is only used as the control of conducting and shut-off, and by temperature-compensating
Voltage is added in source electrode and drain electrode so that control mode is more flexible, solves using continuously adjustabe voltage to provide control signal
The problem of inconvenience that the gate strip inconvenient and that control function is all given to FET brought comes.
Brief description of the drawings
Fig. 1 is the electrical block diagram that prior art is used；
Fig. 2 is signal amplitude control device structural representation of the present invention；
Fig. 3 is digital control type step attenuator structural representation of the present invention；
Fig. 4 is temperature-compensated voltage source circuit structure schematic diagram of the present invention；
Fig. 5 is one of T-shaped attenuation units structural representation of the present invention；
Fig. 6 is the two of improved T-shaped attenuation units structural representation of the present invention；
Fig. 7 is the three of Pi types attenuation units structural representation of the present invention；
Fig. 8 is digital control type step attenuator embodiment of the present invention；
Fig. 9 is the experimental result for the digital control type step attenuator for not using temperature-compensating；
Figure 10 is the experimental result of the digital control type step attenuator using temperature-compensating.
Embodiment
Technical scheme is described in further detail below in conjunction with the accompanying drawings, but protection scope of the present invention is not limited to
It is as described below.
As shown in Fig. 2 a kind of signal amplitude control device with temperature compensation function, it decays including digital control type stepping
Device and temperature-compensated voltage source；The output end in described temperature-compensated voltage source connects with the control end of digital control type step attenuator
Connect；The input of described digital control type step attenuator is connected with signal input part, and output end is connected with signal output part；It is described
Digital control type step attenuator realize temperature compensating voltage source output control voltage and temperature relation；Described temperature
Compensating voltage source realizes the operating ambient temperature of detection means, and the change of environment temperature is converted into control by transfer function
Voltage VCTRLBe transferred to the control end of digital control type step attenuator, then according to temperature-compensated voltage source export control voltage with
The change for the digital control type step attenuator attenuation that the relation compensation of temperature is brought due to the change of ambient temperature.
As shown in figure 3, described digital control type step attenuator includes the attenuation units that several are cascaded successively, described declines
Subtracting the switch control device of unit includes FET, and described FET realizes the circuit network that control input signal is passed through
Network.Input signal interpolation of insertion loss under switch control device Push And Release different conditions is required attenuation；It is described
FET conducting when conducting resistance be both affected by temperature, while again by the voltage difference V between grid and source electrodeGSControl
System, adds the voltage difference V between different grid and source electrode to the FET at different temperatureGSResistance can be turned it on
Keep constant.
As shown in figure 4, described temperature-compensated voltage source includes PTAT current source, resistance pressure-dividing network and operation amplifier
Device；First port (1) and second port (2) the output identical of described PTAT current source and the linear relationship that is directly proportional to temperature
Electric current Iptat=kT, T be absolute temperature, k is constant；Described operational amplifier and voltage network makes VCTRLWith temperature
Degree is in negative linear relationship.
Relation calculation formula between Vctrl and Vref is as follows：
So,
Wherein, R5 represents feedback resistance, and R3, R4 represent potential-divider network resistance, and R1, R2 represent load resistance, and Vctrl is represented
Voltage in second port (2).
The control voltage V of described temperature-compensated voltage source outputCTRLSource electrode and leakage with FET in attenuation units
Pole is connected.
Preferably, described FET is n-type metal-oxide-semiconductor field effect transistor, grid voltage VGIt is used as break-make control, its direct current control
Voltage processed is in 0V and VDDBetween switch, be connected between source electrode and drain electrode by high resistance, and by temperature-compensated voltage VCTRLControl
System, because temperature-compensated voltage VCTRLChange with ambient temperature, so the voltage difference V between grid and source electrodeGS=VG-
VCTRLAlso change with ambient temperature, and the voltage difference V between grid and source electrodeGSIt is can ensure that with the relation of temperature in switch
When nMOS FETs are turned on, conducting resistance keeps constant under different ambient temperatures.
Described attenuation units areParallel connection type structure or improved T-type structure or Pi type structures.
As shown in figure 5, described T-type structure includes FET and decay branch road, the source of described nMOS FETs
Pole and drain electrode and control voltage VCTRLConnection, described source electrode and drain electrode are also connected with decay branch road, are applicable to attenuation small
Unit.
As shown in fig. 6, described improved T-type structure and decay branch road, the source electrode of described simplification T-type structure with by the
The decay branch road series connection of one decay branch road and the second decay branch circuit parallel connection, it is possible to provide the decay bigger than simplified T-type structure
Amount.
As shown in fig. 7, described Pi types structure includes series connection FET MS, parallel field effect pipe MPWith decay branch road；Institute
The FET M statedSWith FET MPSource electrode and drain electrode and control voltage VCTRLConnection, described source electrode and drain electrode also with
Decay branch road connection；It has two decay branch roads in parallel, therefore is used for the big unit of attenuation.
Preferably, by taking n-type metal-oxide-semiconductor field effect transistor (nMOS pipes) as an example, nMOS tube grid voltages VGAs break-make control, its is straight
Flow control voltage is in 0V and VDDBetween switch；Connected between source electrode and drain electrode by high resistance, and be connected to temperature-compensating electricity simultaneously
The output control terminal voltage V of potential sourceCTRL, therefore the DC potential difference V between source electrode and drain electrodeDSFor 0, it can be ensured that nMOS pipes are being led
Linear zone, and voltage difference V of the conducting resistance between grid and drain electrode are operated in when logicalGS=VG-VCTRLControl, when grid and leakage
Voltage difference V between poleGSDuring more than cut-in voltage, the conducting of nMOS pipes；As the voltage difference V between grid and drain electrodeGSSmall and unlatching
During voltage, the shut-off of nMOS pipes；As series connection nMOS pipes MSConducting, parallel connection nMOS pipes MPDuring shut-off, attenuation units circuit equivalent is reference
State network is simultaneously in reference state, and now the insertion loss of the element circuit is ILref, transmitting phase isAs series connection nMOS pipes MS
Shut-off, parallel connection nMOS pipes MPDuring conducting, attenuation units circuit equivalent is for decay state network and in decay state, and now the unit is electric
The insertion loss on road is ILatt, transmitting phase isThen the attenuation A=IL that the attenuation units circuit is producedref-ILatt, band
The additional phase shift comeThe parasitic parameter of nMOS pipes can not be ignored simultaneously, predominantly conducting resistance and parasitic capacitance；
Wherein the main source of the micro- reference state network insertion loss of conducting resistance, believes while also functioning to certain decay in decay state network
Number effect；Parasitic capacitance is then the main source of additional phase shift；Conducting resistance when nMOS pipes are turned on can be by grid and leakage
Voltage difference V between poleGSControl, manages for the nMOS of same size, works as VGSChange between cut-in voltage and breakdown voltage
When, VGSBigger conducting resistance is smaller, VGSSmaller then conducting resistance is bigger.
After multiple attenuation units circuits cascadings, the control end of each attenuation units is connected together and and control voltage
VCTRLConnection control, and the grid voltage V of unitGIt is relatively independent, can be individually in two kinds of work shapes of reference state and decay state
Switch between state；Whole digital control type step attenuator just can be in the minimal attenuation stepping set and the attenuation range set
It is interior that input signal is decayed；The parasitic capacitance that nMOS pipes are introduced can bring larger additional phase shift Φ, therefore, be declined in design
Reduce expenditure road when, certain measure can be taken, low-pass network, the additional phase shift that brings of compensation parasitic parameter is such as introduced.
As shown in Figure 8, it is preferable that described digital control type step attenuator is six digital control types for being operated in 19~24GHz
Step attenuator, resolution ratio (minimal attenuation stepping) is 0.5dB, 0~31.5dB of attenuation range；Six of the digital control type attenuator
Attenuation units are respectively 0.5dB, 1dB, 2dB, 4dB, 8dB and 16dB, and wherein 0.5dB uses the simplification T similar with Fig. 5 with 1dB
Type structure, 1dB uses the T-type structure similar with Fig. 6 with 2dB, and 8dB and 16dB use the Pi type structure similar with Fig. 7；By six
Attenuation units circuit is concatenated together constituting six digital control type step attenuators in a certain order.The grid electricity of unit
Press VGIndependent control, works as VGIn 0V and VDDBetween when switching, the unit is cut between reference state and decay two kinds of working conditions of state
Change.Six units switch successively, just can obtain 26=64 kinds of states.Because supply voltage is fixed in most cases, continuously
Adjustable voltage is more difficult to be provided, therefore the method for the digital control type of the embodiment is simple and easy to apply.
Using n-type metal-oxide-semiconductor field effect transistor (nMOS pipes) as the switching device of handover network, and the channel characteristic of nMOS pipes can be with
The change for temperature produces very big change, and conducting resistance can increase with the rise of ambient temperature；Temperature-compensating electricity
Can be by temperature change by specifically transmitting letter comprising PTAT current source, operational amplifier and resistance pressure-dividing network in potential source
Number is converted to output control voltage VCTRL；In attenuation units circuit, control voltage VCTRLIt is used as nMOS pipes source S and drain D
Direct current biasing, now grid and drain electrode between voltage difference VGS=VG-VCTRLBecause the effect in temperature-compensated voltage source also can
Change with ambient temperature, it was found from discussion above, the conducting resistance of nMOS pipes is not only influenceed by temperature, can also
By the voltage difference V between grid and drain electrodeGSInfluence, and specific transfer function is by temperature transition in temperature-compensated voltage source
For output control voltage VCTRL, then by changing the voltage difference V between grid and drain electrodeGSMode by temperature to nMOS pipes
Influence is eliminated so that conducting resistance keeps constant with parasitic capacitance.
The attenuation A and annex phase shift phi that attenuation units circuit is produced under different ambient temperatures in embodiment are several
It is constant, so that the overall RMS error of digital control type step attenuator keeps stable；If as a result it will be appreciated that not any
Indemnifying measure, is influenced by temperature the series connection nMOS pipes M in attenuation units circuitS, parallel connection nMOS pipes MPChannel characteristic also can be with
Temperature changes, ILrefAnd ILattIt is affected, causes the attenuation A can not keep constant, produce larger decay
Error is measured, and then influences the overall RMS error of digital control type step attenuator.
As shown in figure 9, for 19~24GHz six digital control type step attenuators when not using temperature-compensating in not equality of temperature
The RMS error of (- 55 DEG C, 25 DEG C and 125 DEG C) under degree；As seen from the figure, -55 DEG C when in the range of 19~24GHz digital control type walk
Enter the attenuated error of attenuator between 1.6dB to 2.55dB；Digital control type stepping decays in the range of 19~24GHz at 25 DEG C
The attenuated error of device is between 0.25dB to 0.6dB；At 125 DEG C in the range of 19~24GHz digital control type step attenuator
Attenuated error is between 1.9dB to 1.4dB.
As shown in Figure 10, six digital control type step attenuators for being 19~24GHz are when using temperature-compensating in not equality of temperature
The RMS error of (- 55 DEG C, 25 DEG C and 125 DEG C) under degree；As seen from the figure, -55 DEG C when in the range of 19~24GHz digital control type walk
Enter the attenuated error of attenuator between 0.53dB to 0.495dB；Digital control type stepping declines in the range of 19~24GHz at 25 DEG C
Subtract the attenuated error of device between 0.35dB to 0.47dB；At 125 DEG C in the range of 19~24GHz digital control type step attenuator
Attenuated error between 0.515dB to 0.608dB.
It follows that carrying out the digital control type step attenuator after temperature-compensating under different ambient temperatures, it is produced
Raw attenuation and attenuated error all decreases, and attenuation, attenuated error and additional phase shift are in the range of 19~24GHz
All it is kept relatively constant.
Described above is only the preferred embodiment of the present invention, it should be understood that the present invention is not limited to described herein
Form, is not to be taken as the exclusion to other embodiment, and available for various other combinations, modification and environment, and can be at this
In the text contemplated scope, it is modified by the technology or knowledge of above-mentioned teaching or association area.And those skilled in the art are entered
Capable change and change does not depart from the spirit and scope of the present invention, then all should appended claims of the present invention protection domain
It is interior.
Claims (9)
1. a kind of signal amplitude control device with temperature compensation function, it is characterised in that：It includes attenuator and temperature is mended
Repay voltage source；The output end in described temperature-compensated voltage source and the control end of attenuator are connected；Detect in temperature-compensated voltage source
Operating ambient temperature, and different environment temperatures is converted into the control end that different control voltages supply attenuator, attenuator
Then under different environment temperatures, due to the compensating action in temperature-compensated voltage source, attenuation is kept constant.
2. a kind of signal amplitude control device with temperature compensation function according to claim 1, it is characterised in that：Institute
The attenuator stated is digital control type step attenuator, is made up of several attenuation units cascaded successively, each attenuation units are all provided with
There are input, output end and control end, the input of first attenuation units is connected with input signal, first attenuation units
Output end is connected with the input of attenuation units thereafter, by that analogy, and the output end of last attenuation units is entirely to decline
Subtract the output end of device, the control end of each attenuation units is connected with the control signal from temperature-compensated voltage source.
3. a kind of signal amplitude control device with temperature compensation function according to claim 2, it is characterised in that：Institute
The attenuation units stated mainly are made up of one or more decay branch roads and one or more controlling switches.
4. a kind of signal amplitude control device with temperature compensation function according to claim 3, it is characterised in that：Institute
The controlling switch stated is metal-oxide-semiconductor field effect transistor.
5. a kind of signal amplitude control device with temperature compensation function according to claim 1 or 4, its feature exists
In：The described control voltage of temperature-compensated voltage source output and the source electrode of FET and drain electrode are connected, grid voltage VGControl
The break-make of FET processed, is connected and by function of temperature compensation control voltage V between source electrode and drain electrode by high resistanceCTRL'sControl, because
Function of temperature compensation control voltage VCTRLVary with temperature, the voltage difference V between grid and source electrodeGS=VG-VCTRLAlso change with temperature,
And the voltage difference V between grid and source electrodeGSIt can ensure that conducting resistance is not or not switched field effect pipe is turned on the relation of temperature
With keeping constant under environment temperature.
6. a kind of signal amplitude control device with temperature compensation function according to claim 1, it is characterised in that：Institute
The temperature-compensated voltage source stated includes PTAT current source and operational amplifier, and temperature change is changed by specific transfer function
For output control voltage VCTRL。
7. a kind of signal amplitude control device with temperature compensation function according to claim 3, it is characterised in that：Institute
The attenuation units stated are the parallel connection type attenuation network being made up of Parallel Control switch and branch road of decaying, described Parallel Control switch
It is located at decay branch road in ground leg.
8. a kind of signal amplitude control device with temperature compensation function according to claim 3, it is characterised in that：Institute
The attenuation units stated are the T-shaped attenuation network of modified being made up of series connection control switch, Parallel Control switch and three decay branch roads
Network, wherein, described Parallel Control switch and a decay branch road is located in ground leg, other two decay branch road is located at T
In the two-arm branch road of type network, described series connection control switch is connected across the input/output terminal of attenuation units.
9. a kind of signal amplitude control device with temperature compensation function according to claim 3, it is characterised in that：Institute
The attenuation units stated are the Pi type attenuation networks being made up of series connection control switch, Parallel Control switch and three decay branch roads, institute
The Pi types attenuation network stated includes two to ground leg, each ground leg is switched by a Parallel Control and a decay branch road
Constitute, another decay branch road is located at signal and leads directly to branch road, and the input that described series connection control switch is connected across attenuation units is defeated
Go out end.
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| CN107769744A (en) * | 2017-10-26 | 2018-03-06 | 成都振芯科技股份有限公司 | A kind of temperature-compensating balanced device |
| CN109687841A (en) * | 2018-12-21 | 2019-04-26 | 中国电子科技集团公司第五十五研究所 | Broadband temperature compensation attenuator |
| WO2020087367A1 (en) * | 2018-10-31 | 2020-05-07 | 华为技术有限公司 | Temperature-compensation circuit and phased array device |
| CN111769818A (en) * | 2020-05-29 | 2020-10-13 | 中国电子科技集团公司第十四研究所 | Temperature compensation attenuator |
| CN112653411A (en) * | 2020-12-15 | 2021-04-13 | 重庆西南集成电路设计有限责任公司 | Temperature compensation circuit and method for numerical control phase shift/digital attenuator |
| CN113985954A (en) * | 2021-11-11 | 2022-01-28 | 思诺威科技(无锡)有限公司 | Novel gain temperature compensation control circuit |
| CN114094984A (en) * | 2022-01-24 | 2022-02-25 | 南京燧锐科技有限公司 | High-linearity voltage-controlled attenuator circuit |
| CN114265038A (en) * | 2021-11-22 | 2022-04-01 | 电子科技大学 | High-precision switch type phase-shifting unit with temperature compensation effect |
| CN115268555A (en) * | 2022-07-27 | 2022-11-01 | 成都振芯科技股份有限公司 | Second-order temperature compensation band gap reference voltage circuit and differential circuit |
| WO2023010732A1 (en) * | 2021-08-04 | 2023-02-09 | 国仪量子(合肥)技术有限公司 | Temperature compensation broadband signal attenuation circuit and control method thereof |
| CN115913173A (en) * | 2023-02-07 | 2023-04-04 | 成都明夷电子科技有限公司 | Attenuator and method for eliminating switching overshoot |
| CN116248076A (en) * | 2023-02-24 | 2023-06-09 | 电子科技大学 | High-linearity digital step attenuator with low power consumption logic control |
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| CN107769744A (en) * | 2017-10-26 | 2018-03-06 | 成都振芯科技股份有限公司 | A kind of temperature-compensating balanced device |
| WO2020087367A1 (en) * | 2018-10-31 | 2020-05-07 | 华为技术有限公司 | Temperature-compensation circuit and phased array device |
| US11984915B2 (en) | 2018-10-31 | 2024-05-14 | Huawei Technologies Co., Ltd. | Temperature compensation circuit and phased array apparatus |
| CN109687841A (en) * | 2018-12-21 | 2019-04-26 | 中国电子科技集团公司第五十五研究所 | Broadband temperature compensation attenuator |
| CN109687841B (en) * | 2018-12-21 | 2022-08-19 | 中国电子科技集团公司第五十五研究所 | Broadband temperature compensation attenuator |
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| CN112653411B (en) * | 2020-12-15 | 2022-08-19 | 重庆西南集成电路设计有限责任公司 | Temperature compensation circuit and method for numerical control phase shift/digital attenuator |
| WO2023010732A1 (en) * | 2021-08-04 | 2023-02-09 | 国仪量子(合肥)技术有限公司 | Temperature compensation broadband signal attenuation circuit and control method thereof |
| CN113985954A (en) * | 2021-11-11 | 2022-01-28 | 思诺威科技(无锡)有限公司 | Novel gain temperature compensation control circuit |
| CN113985954B (en) * | 2021-11-11 | 2022-11-25 | 思诺威科技(无锡)有限公司 | Gain temperature compensation control circuit |
| CN114265038A (en) * | 2021-11-22 | 2022-04-01 | 电子科技大学 | High-precision switch type phase-shifting unit with temperature compensation effect |
| CN114265038B (en) * | 2021-11-22 | 2024-02-09 | 电子科技大学 | High-precision switch type phase shifting unit with temperature compensation effect |
| CN114094984A (en) * | 2022-01-24 | 2022-02-25 | 南京燧锐科技有限公司 | High-linearity voltage-controlled attenuator circuit |
| CN115268555A (en) * | 2022-07-27 | 2022-11-01 | 成都振芯科技股份有限公司 | Second-order temperature compensation band gap reference voltage circuit and differential circuit |
| CN115268555B (en) * | 2022-07-27 | 2024-05-28 | 成都振芯科技股份有限公司 | Second-order temperature compensation band gap reference voltage circuit and differential circuit |
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| CN116248076A (en) * | 2023-02-24 | 2023-06-09 | 电子科技大学 | High-linearity digital step attenuator with low power consumption logic control |
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